CN102569015A - Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device - Google Patents
Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device Download PDFInfo
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- CN102569015A CN102569015A CN2010106231410A CN201010623141A CN102569015A CN 102569015 A CN102569015 A CN 102569015A CN 2010106231410 A CN2010106231410 A CN 2010106231410A CN 201010623141 A CN201010623141 A CN 201010623141A CN 102569015 A CN102569015 A CN 102569015A
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Abstract
The invention relates to an etching liquid replenishing device, an etching liquid replenishing method and wet etching equipment with the etching liquid replenishing device. The etching liquid replenishing device disclosed by the invention comprises a liquid inlet pipe, a liquid outlet pipe, a liquid storage tank, a liquid replenishing unit, a concentration detection unit and a processing unit, wherein the liquid inlet pipe and the liquid outlet pipe are communicated with an etching tank; the liquid storage tank is communicated with the etching tank through the liquid inlet pipe and the liquid outlet pipe; the liquid replenishing unit is used for replenishing spare solutions of various components of the etching liquid to the liquid storage tank; the concentration detection unit is used for detecting concentrations of various components of at least one of the liquid storage tank, the etching tank, the liquid inlet pipe and the liquid outlet pipe; the processing unit is used for calculating volumes of the spare solutions of various components needing to be replenished into the liquid storage tank according to a concentration detection result, target concentration ranges of various components in the etching liquid, volume of the etching liquid in the liquid storage tank and concentrations of the spare solutions of various components; and the liquid replenishing unit is used for replenishing the spare solutions of various components to the liquid storage tank according to a calculation result, so that the concentrations of various components are adjusted to be in the target concentration ranges. According to the invention, stability of the concentrations of various components of the etching liquid can be effectively ensured.
Description
Technical field
The present invention relates to wet etching technique, particularly etching liquid device for supplying, replenishing method and comprise the wet etching equipment of this device for supplying.
Background technology
When carrying out wet etching, silicon chip is immersed in the chemical reagent or reagent solution of preparation, make not that a part of film surface sheltered by resist and reagent generation chemical reaction and be removed.For example, with containing the solution etching silicon dioxide film of hydrofluoric acid, with phosphoric acid etching aluminium film etc.This method of in liquid environment, carrying out etching is called " wet method " etching.Its advantage be easy and simple to handle, low for equipment requirements, be easy to realize producing in enormous quantities and the selectivity of etching good.In the current edge wet-etching technology that adopts, the edge PN junction for example adopts and comprises certain density nitric acid (HNO
3) and the etching liquid of hydrofluoric acid (HF) carry out etching.In etching process, along with the volatilization of the chemical reaction and the etching liquid itself of silicon chip and various components, the etching liquid total amount will constantly reduce, and wherein each component concentrations also may depart from the original start value.For this reason, the etching liquid make-up system needs the liquid level height according to etching liquid, replenishes the soup of having prepared according to the concentration ratio of set point to the etching groove.Because the wear rate of various components is not necessarily identical in the etching groove, therefore after the process fluid infusion of certain number of times, each component concentrations ratio will differ greatly with the original start value, thereby cause etching liquid to lose efficacy, and, can't carry out the edge wet etching effectively that is.In this case, need and more renew the etching liquid of configuration with the whole emptyings of the etching liquid in etching groove and the reservoir.
Summary of the invention
One of the object of the invention provides a kind of etching liquid device for supplying, and it can guarantee the stability of each concentration of component of etching liquid.
A kind of etching liquid device for supplying is provided for this reason, is used for replenishing etching liquid, comprising to the etching groove of wet etching equipment:
The feed tube and the drain pipe that are communicated with the etching groove;
Reservoir, it is communicated with the loop that supplies etching liquid to circulate to form through said feed tube and drain pipe with the etching groove;
The fluid infusion unit, it is used for the stock solution to each component of the said etching liquid of said reservoir supply;
And concentration detecting unit and processing unit; Said concentration detecting unit be used for detecting said reservoir, said etching groove and said feed tube and drain pipe at least one each component concentrations and testing result is sent to said processing unit; Said processing unit is calculated the volume that needs the stock solution of each component of supply in reservoir according to the volume of etching liquid and the densimeter of each component stock solution in the target concentration range of each component in said testing result, the etching liquid, the reservoir, and the stock solution that said fluid infusion unit replenishes each component to said reservoir according to said result of calculation is to adjust to each component concentrations of the etching liquid in the said reservoir in the target concentration range.
Preferably, in above-mentioned etching liquid device for supplying, said concentration detecting unit is provided with in the said feed tube, in the said reservoir or in the said etching groove.More preferably, in above-mentioned etching liquid device for supplying, also comprise pump, it is arranged on the feed tube, is used to drive etching liquid and flows to said etching groove from said reservoir.
Preferably, in above-mentioned etching liquid device for supplying, also comprise the Level Detection unit, be used to detect the liquid level of etching liquid in the reservoir, said processing unit calculates the volume of etching liquid in the reservoir according to said testing result.
Preferably, in above-mentioned etching liquid device for supplying, the absworption peak of the near infrared spectrum of said concentration detecting unit through measuring said etching liquid is confirmed each component concentrations.
Preferably, in above-mentioned etching liquid device for supplying, said etching liquid is made up of nitric acid, hydrofluoric acid and deionized water, and the object that is etched is a silicon chip.
Of the present invention also have a purpose to provide a kind of etching liquid compensation process through above-mentioned etching liquid device for supplying, is used for replenishing etching liquid to the etching groove of wet etching equipment, may further comprise the steps:
A, detect in said reservoir, said etching groove and said feed tube and the drain pipe at least one each component concentrations;
B, the target concentration range according to each component in said testing result, the etching liquid, the volume of the interior etching liquid of reservoir and the densimeter of each component stock solution are calculated the volume that needs the stock solution of each component of supply in reservoir; And
C, replenish each component to said reservoir according to said result of calculation stock solution so that each component concentrations of the etching liquid in the said reservoir is adjusted in the target concentration range.
Preferably, in step a, the absworption peak of the near infrared spectrum through measuring said etching liquid is confirmed each component concentrations.
Preferably; Said etching liquid is made up of nitric acid, hydrofluoric acid and deionized water; In step c, all adjust in the target concentration range to one or more concentration that said reservoir replenishes in nitric acid, hydrofluoric acid and the deionized water with nitric acid, hydrofluoric acid and fluosilicic acid in said etching liquid according to said result of calculation.
Of the present invention also have a purpose to provide a kind of wet etching equipment, and it comprises etching groove and above-mentioned etching liquid device for supplying.
Preferably, in above-mentioned wet etching system, said etching groove comprises the one group of roller that is arranged on the etching trench bottom, is used to transmit the silicon chip that is etched.
Indicate the interpolation of soup through each component concentrations in the Accurate Analysis etching liquid and according to the concentration analysis result according to etching liquid device for supplying of the present invention, replenishing method and wet etching equipment; Make before and after the fluid infusion each component soup ratio basically identical in the etching groove, guaranteed the stability of edge etching.Have advantage according to etching liquid device of the present invention and wet etching system:
(1) can accurately monitor the concentration of each component soup in the etching groove;
(2) guaranteed that etching liquid replenishes the stability of front and back technology;
(3) prolonged useful life of etching liquid; And
(4) reduced harm to human body and environment.
Description of drawings
From the following detailed description that combines accompanying drawing, will make above and other objects of the present invention and advantage clear more fully, wherein, same or analogous key element adopts identical label to represent.
Fig. 1 is the sketch map according to the wet etching equipment of one embodiment of the invention.
The flow chart of Fig. 2 in wet etching system, carrying out the etching liquid supply according to the embodiment of the invention.
Embodiment
Accompanying drawing according to the expression embodiment of the present invention specifically describes embodiments of the invention below.
Fig. 1 is the sketch map according to the wet etching system of one embodiment of the invention.
As shown in Figure 1, wet etching system 1 comprises etching groove 10 and etching liquid device for supplying 20.The bottom of etching groove 10 is provided with one group of roller 110, and silicon chip 2 to be etched is carried by roller 110, and silicon chip 2 is sent to the relative other end from an end of etching groove 110 when roller 110 rolls.
As shown in Figure 1, etching liquid device for supplying 20 comprises feed tube 210, drain pipe 220, reservoir 230, fluid infusion unit 240, concentration detecting unit 250, pump 260, valve 270, liquid level detecting unit 280 and processing unit 290.
Feed tube 210 is connected together reservoir 230 and etching groove 10 with drain pipe 220, thereby forms a loop that circulates that makes etching liquid from reservoir 230 feed tubes 210 → etching groove 10 → drain pipe 220 → reservoir 230.In addition, fluid infusion unit 240 is communicated with reservoir 230 through valve 270, and the stock solution that is used for various components are provided is to replenish the etching liquid that etching process is consumed.Valve 270 is a normally open when 20 work of etching liquid device for supplying.
In the present embodiment,, in feed tube 210, be provided with concentration detecting unit 250, be used for sample streams through the etching liquid of feed tube 210 and each component concentrations of detection sampling in order to monitor each component concentrations of etching liquid.On the other hand, liquid level detecting unit 280 is set at reservoir 230 interior liquid levels with detection etch liquid.Concentration detecting unit 250 is sent to processing unit 290 with the result that liquid level detecting unit 280 will record; The liquid level and each concentration of component of the etching liquid that obtains according to detection by processing unit 290; And the target concentration range of each component and the concentration of each component stock solution in the combination etching liquid; Calculate kind (minimum can be 0 kind) and the quantity (the minimum 0L of can be) of the stock solution of injecting to reservoir 230 and export result of calculation to fluid infusion unit 240, thereby each concentration of component of etching liquid is controlled in the target concentration range.The kind of the stock solution of confirming about etching liquid device for supplying 20 to inject and the mode of quantity will be described in detail below.
Can be with the near-infrared optical sniffer as concentration detecting unit 250.This optical detecting gear utilizes the characteristic of the various components of etching liquid to the selectivity absorption of near infrared light, according to calculating various component concentrations with the size of the corresponding absworption peak of various components on the near infrared spectrum.It is worthy of note that though the result that concentration detection apparatus 250 will detect through wired mode is sent to processing unit 290, concentration detection apparatus 250 also can transmit testing result through wireless mode here.In addition; Because etching liquid is fully mobile in circulating in the loop of being made up of reservoir 230 → feed tube 210 → etching groove 10 → drain pipe 220 → reservoir 230; Therefore the concentration of other position is consistent basically in each component concentrations of etching liquid that can reasonably suppose to record at feed tube 210 places and the loop, even and have and slightly variantly also can not control the result to etching liquid concentration and not produce substantial adverse effect.In view of this, concentration detecting unit 250 also can be arranged on other position that circulates the loop, for example in etching groove 10 or the reservoir 230.
In the present embodiment, in feed tube 210, also be provided with pump 260, be used for the etching liquid in the reservoir 230 is pumped to the etching groove 10 that is positioned at reservoir 230 tops.
Fig. 2 is for carrying out the flow chart that etching liquid replenishes in the wet etching system according to the embodiment of the invention.In the present embodiment, suppose that etching liquid is mainly formed by nitric acid, hydrofluoric acid and water configuration, wherein, the concentration target value scope of nitric acid and hydrofluoric acid is respectively 40% ± 2% and 5% ± 1%.As stated, along with the chemical reaction that takes place between etching liquid and the wafer (for example silicon chip), nitric acid in the etching liquid and hydrofluoric acid are by the quantity that constantly consumes and consume and inconsistent.In addition, in above-mentioned chemical reaction, also will produce accessory substance H
2SiF
6Because this accessory substance can influence etch rate, produces underproof wafer, therefore in etching process, need strict its concentration of control, in the ordinary course of things, require H
2SiF
6Concentration be controlled within 1%.
Referring to Fig. 2, in conjunction with referring to Fig. 1, in step 410, concentration detecting unit 250 and the current concentration of liquid level detecting unit 280 each component of difference detection etch liquid and the liquid level of the etching liquid in the reservoir 230.
As stated, in the present embodiment, concentration detecting unit 250 will be measured nitric acid, hydrofluoric acid and the H in the etching liquid
2SiF
6Etc. component concentrations.
In step 420, concentration detecting unit 250 is sent to processing unit 290 with liquid level detecting unit 280 with measured value subsequently.
Then get into step 430, processing unit 290 judges that the current concentration of each component in the etching liquid is whether in target concentration range.If the current concentration of each component all is positioned at target concentration range, then finishes etching liquid and replenish process, otherwise get into step 440.
In step 440, kind and quantity that processing unit 290 calculates the stock solution that in reservoir 230, replenish according to the target concentration range and the etching liquid liquid levels in the reservoir 230 of each component in the current concentration of each component in the etching liquid, the etching liquid.
Then get into step 450, processing unit 290 exports result of calculation to fluid infusion unit 240.
Get into step 460 subsequently, fluid infusion unit 240 indication valves 270 are opened, and according to the result of calculation that receives to reservoir 230 carry the stock solution of the kind of calculating and quantity.
The etching liquid of above-mentioned steps 410-460 representative replenishes process regularly (for example every at a distance from 5 minutes) or execution aperiodically, is controlled in the goal-setting value scope with each component concentrations with etching liquid.
Below provide the instantiation of method of kind and the quantity of the stock solution that the calculating in the step 440 is added.
Tabulate down and 1 show the variable that will relate in these computational methods.
Table 1
In table 1, x, y and z be nitric acid, hydrofluoric acid and the H in the etching liquid that records of indicated concentration detecting unit 250 respectively
2SiF
6Concentration; L is the cumulative volume of etching liquid in reservoir 230, and it can calculate according to the liquid level that is recorded by liquid level detecting unit 280; T1 and t2 are respectively the concentration as the nitric acid and the hydrofluoric acid of stock solution that will be added in the reservoir 230, for example can be 50% and 30%; A, b and c represent respectively to be added in the reservoir 230 as the nitric acid of stock solution and the volume of hydrofluoric acid and deionized water.
As stated, in the present embodiment, the target range of each component concentrations is:
Nitric acid: 40% ± 2%
Hydrofluoric acid: 5% ± 1%
H
2SiF
6：≤1％
Then the variable shown in the table 1 should satisfy following inequality:
According to top inequality, under the situation that x, y, z, L, t1 and t2 have confirmed, can calculate the nitric acid that will be added in the reservoir 230 and volume a, b and the c of hydrofluoric acid and deionized water.
Below provide the example of several application aforementioned calculation method.
Example 1
Concentration detecting unit 250 is at the detected nitric acid of step 410, hydrofluoric acid and H
2SiF
6Concentration be respectively 37.9%, 5.5% and 0.5%, liquid level unit 280 is 20 liters at the liquid level of the detected etching liquid of step 410 corresponding to the volume of the etching liquid in the reservoir 230.Processing unit 290 is judged hydrofluoric acid and H
2SiF
6Concentration all be positioned at target range, therefore will utilize following formula (1), according to each component concentrations that records and the volume of etching liquid, the nitric acid quantity that calculates 50% concentration that needs to add is 4.2 liters.After the nitric acid that has added above-mentioned quantity, the hydrofluoric acid component concentrations becomes 4.55%, still in target range, and H
2SiF
6Concentration still be lower than 1%, visible such interpolation operation is feasible.
Example 2
Concentration detecting unit 250 is at the detected nitric acid of step 410, hydrofluoric acid and H
2SiF
6Concentration be respectively 41%, 3.9% and 0.8%, liquid level unit 280 is 30 liters at the liquid level of the detected etching liquid of step 410 corresponding to the volume of the etching liquid in the reservoir 230.Processing unit 290 is judged H
2SiF
6Concentration be positioned at target range; But the concentration of nitric acid and hydrofluoric acid has all departed from target range separately; Therefore will utilize following formula (1) and (2); According to each component concentrations that records and the volume of etching liquid, the nitric acid quantity that calculates 50% concentration that needs interpolation is 11.4 liters, and needing the hydrofluoric acid quantity of 30% concentration of interpolation is 3.6 liters.After nitric acid that has added above-mentioned quantity and hydrofluoric acid, H
2SiF
6Concentration still be lower than 1%, visible such interpolation operation is feasible.
Example 3
Concentration detecting unit 250 is at the detected nitric acid of step 410, hydrofluoric acid and H
2SiF
6Concentration be respectively 40%, 5% and 1.1%, liquid level unit 280 is 20 liters at the liquid level of the detected etching liquid of step 410 corresponding to the volume of the etching liquid in the reservoir 230.Processing unit 290 is judged H
2SiF
6The deviation of concentration target range; The concentration of nitric acid and hydrofluoric acid is in target range separately; Therefore will utilize following formula (1)-(3), according to each component concentrations that records and the volume of etching liquid, the nitric acid quantity that calculates 50% concentration that needs interpolation is 12 liters; Needing the hydrofluoric acid quantity of 30% concentration of interpolation is 2.5 liters, and the deionized water that needs to add is 0.5 liter.After the nitric acid that has added above-mentioned quantity, hydrofluoric acid and deionized water, the concentration of nitric acid and hydrofluoric acid remains unchanged, and H
2SiF
6Concentration be 0.63%, visible such interpolation operation is feasible.
Since can be under the situation that does not deviate from essence spirit of the present invention, with the various forms embodiment of the present invention, therefore above-described embodiment only is illustrative rather than restrictive.Scope of the present invention is defined by accompanying claims, and various variations that top describing mode is done or change all belong to the protection range of accompanying claims.
Claims (11)
1. an etching liquid device for supplying is used for replenishing etching liquid to the etching groove of wet etching equipment, comprising:
The feed tube and the drain pipe that are communicated with the etching groove;
Reservoir, it is communicated with the loop that supplies etching liquid to circulate to form through said feed tube and drain pipe with the etching groove;
The fluid infusion unit, it is used for the stock solution to said each component of etching liquid of said reservoir supply;
It is characterized in that; Also comprise concentration detecting unit and processing unit; Said concentration detecting unit be used for detecting said reservoir, said etching groove and said feed tube and drain pipe at least one each component concentrations and testing result is sent to said processing unit; Said processing unit is calculated the volume that needs the stock solution of each component of supply in reservoir according to the volume of etching liquid and the densimeter of each component stock solution in the target concentration range of each component in said testing result, the etching liquid, the reservoir, and the stock solution that said fluid infusion unit replenishes each component to said reservoir according to said result of calculation is to adjust to each component concentrations of the etching liquid in the said reservoir in the target concentration range.
2. etching liquid device for supplying as claimed in claim 1 is characterized in that, said concentration detecting unit is arranged in the said feed tube, in the said reservoir or in the said etching groove.
3. etching liquid device for supplying as claimed in claim 2 is characterized in that, also comprises pump, and it is arranged on the feed tube, is used to drive etching liquid and flows to said etching groove from said reservoir.
4. etching liquid device for supplying as claimed in claim 1 is characterized in that, also comprises the Level Detection unit, is used to detect the liquid level of etching liquid in the reservoir, and said processing unit calculates the volume of etching liquid in the reservoir according to said testing result.
5. etching liquid device for supplying as claimed in claim 1 is characterized in that, the absworption peak of the near infrared spectrum of said concentration detecting unit through measuring said etching liquid is confirmed each component concentrations.
6. etching liquid device for supplying as claimed in claim 1 is characterized in that said etching liquid is made up of nitric acid, hydrofluoric acid and deionized water, and the object that is etched is a silicon chip.
7. the etching liquid compensation process through the described etching liquid device for supplying of claim 1 is used for replenishing etching liquid to the etching groove of wet etching equipment, it is characterized in that, may further comprise the steps:
A, detect in said reservoir, said etching groove and said feed tube and the drain pipe at least one each component concentrations;
B, the target concentration range according to each component in said testing result, the etching liquid, the volume of the interior etching liquid of reservoir and the densimeter of each component stock solution are calculated the volume that needs the stock solution of each component of supply in reservoir; And
C, replenish each component to said reservoir according to said result of calculation stock solution so that each component concentrations of the etching liquid in the said reservoir is adjusted in the target concentration range.
8. etching liquid compensation process as claimed in claim 7, wherein, in step a, the absworption peak of the near infrared spectrum through measuring said etching liquid is confirmed each component concentrations.
9. etching liquid compensation process as claimed in claim 7; Wherein, Said etching liquid is made up of nitric acid, hydrofluoric acid and deionized water; In step c, all adjust in the target concentration range to one or more concentration that said reservoir replenishes in nitric acid, hydrofluoric acid and the deionized water with nitric acid, hydrofluoric acid and fluosilicic acid in said etching liquid according to said result of calculation.
10. wet etching equipment that comprises etching groove and the described etching liquid device for supplying of claim 1.
11. wet etching equipment as claimed in claim 10 is characterized in that, said etching groove comprises the one group of roller that is arranged on the etching trench bottom, is used to transmit the silicon chip that is etched.
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|---|---|---|---|
| CN2010106231410A CN102569015A (en) | 2010-12-23 | 2010-12-23 | Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device |
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| CN2010106231410A CN102569015A (en) | 2010-12-23 | 2010-12-23 | Etching liquid replenishing device, etching liquid replenishing method and wet etching equipment with etching liquid replenishing device |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103699143A (en) * | 2012-09-27 | 2014-04-02 | 盛美半导体设备（上海）有限公司 | System and method for controlling concentration of polishing solution to be stable |
| CN104141164A (en) * | 2013-05-08 | 2014-11-12 | 盛美半导体设备（上海）有限公司 | Chemical liquid supply and recycling system and method |
| CN106215798A (en) * | 2016-08-26 | 2016-12-14 | 奥特斯维能源（太仓）有限公司 | A kind of accurate formulation and the method monitoring oxide etching buffer concentration in real time |
| CN107815687A (en) * | 2017-10-17 | 2018-03-20 | 江苏沪运制版有限公司 | Copper chloride corrosive liquid regenerating unit |
| CN109148338A (en) * | 2018-09-04 | 2019-01-04 | 杭州中芯晶圆半导体股份有限公司 | A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency |
| CN113073326A (en) * | 2021-03-23 | 2021-07-06 | 重庆惠科金渝光电科技有限公司 | Method and device for determining acid supplement amount in etching process |
| WO2022062482A1 (en) * | 2020-09-25 | 2022-03-31 | 长鑫存储技术有限公司 | Method for improving etching rate of wet etching |
| CN115494887A (en) * | 2022-11-16 | 2022-12-20 | 合肥新晶集成电路有限公司 | Etching liquid replenishing method and device and etching equipment |
| WO2023060792A1 (en) * | 2021-10-15 | 2023-04-20 | 中国科学院上海微系统与信息技术研究所 | Combined etching liquid, etching system and etching method |
| US11869774B2 (en) | 2020-09-25 | 2024-01-09 | Changxin Memory Technologies, Inc. | Method for improving etching rate of wet etching |
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| CN101140374A (en) * | 2006-09-08 | 2008-03-12 | 三星电子株式会社 | Etching liquid supply device, etching device and etching method |
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| CN101140374A (en) * | 2006-09-08 | 2008-03-12 | 三星电子株式会社 | Etching liquid supply device, etching device and etching method |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103699143A (en) * | 2012-09-27 | 2014-04-02 | 盛美半导体设备（上海）有限公司 | System and method for controlling concentration of polishing solution to be stable |
| CN104141164A (en) * | 2013-05-08 | 2014-11-12 | 盛美半导体设备（上海）有限公司 | Chemical liquid supply and recycling system and method |
| CN104141164B (en) * | 2013-05-08 | 2018-11-06 | 盛美半导体设备（上海）有限公司 | Chemical liquids feed flow and recycling System and method for |
| CN106215798A (en) * | 2016-08-26 | 2016-12-14 | 奥特斯维能源（太仓）有限公司 | A kind of accurate formulation and the method monitoring oxide etching buffer concentration in real time |
| CN107815687A (en) * | 2017-10-17 | 2018-03-20 | 江苏沪运制版有限公司 | Copper chloride corrosive liquid regenerating unit |
| CN109148338A (en) * | 2018-09-04 | 2019-01-04 | 杭州中芯晶圆半导体股份有限公司 | A kind of method and device for improving etching machine nitration mixture and changing liquid efficiency |
| WO2022062482A1 (en) * | 2020-09-25 | 2022-03-31 | 长鑫存储技术有限公司 | Method for improving etching rate of wet etching |
| US11869774B2 (en) | 2020-09-25 | 2024-01-09 | Changxin Memory Technologies, Inc. | Method for improving etching rate of wet etching |
| CN113073326A (en) * | 2021-03-23 | 2021-07-06 | 重庆惠科金渝光电科技有限公司 | Method and device for determining acid supplement amount in etching process |
| WO2023060792A1 (en) * | 2021-10-15 | 2023-04-20 | 中国科学院上海微系统与信息技术研究所 | Combined etching liquid, etching system and etching method |
| CN115494887A (en) * | 2022-11-16 | 2022-12-20 | 合肥新晶集成电路有限公司 | Etching liquid replenishing method and device and etching equipment |
| CN115494887B (en) * | 2022-11-16 | 2023-02-17 | 合肥新晶集成电路有限公司 | Etching liquid supplementing method, etching liquid supplementing device and etching equipment |
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Application publication date: 20120711 |