CN109103267A - 一种AlGaN基MSM结构日盲型紫外探测器及其制备方法 - Google Patents
一种AlGaN基MSM结构日盲型紫外探测器及其制备方法 Download PDFInfo
- Publication number
- CN109103267A CN109103267A CN201810902286.0A CN201810902286A CN109103267A CN 109103267 A CN109103267 A CN 109103267A CN 201810902286 A CN201810902286 A CN 201810902286A CN 109103267 A CN109103267 A CN 109103267A
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- blind
- detector
- light absorbing
- absorbing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 28
- 239000010980 sapphire Substances 0.000 claims abstract description 28
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000004151 rapid thermal annealing Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims 2
- 229910001751 gemstone Inorganic materials 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
本发明公布了一种AlGaN基MSM结构日盲型紫外探测器及制备方法，结构包括图形化蓝宝石衬底、ZnO缓冲层、非故意掺杂Al0.3Ga0.7N光吸收层、第一Ni/Au叉指电极、第二Ni/Au叉指电极。AlGaN基MSM结构日盲型紫外探测器制备方法包括：首先对图形化蓝宝石衬底进行清洗，采用金属有机物化学气相淀积技术在图形化蓝宝石衬底上生长获得外延结构ZnO缓冲层和非故意掺杂Al0.3Ga0.7N光吸收层，在非故意掺杂Al0.3Ga0.7N光吸收层和图形化蓝宝石衬底上均先后溅射金属Ti层和Au层，最后整个器件在300℃的N2氛围中快速热退火200s。本发明的有益效果：采用图形化蓝宝石衬底，相比普通的蓝宝石衬底，可以降低外延层材料的位错密度，提高外量子效率；采用ZnO缓冲层技术，可以获得极低暗电流。
Description
技术领域
本发明涉及光电传感器领域，具体涉及一种AlGaN基MSM结构日盲型紫外探测器及其制备方法。
背景技术
紫外光在电磁波谱中的位置通常被定义为波长在100nm-400nm的区域，而太阳光中大约有10％的紫外光，在大气层中，波长范围小于280nm的紫外光会被吸收，因此紫外光波长在240-280nm的区域通常被称为“日盲”区域。
“日盲”区域的紫外光受自然光的噪音干扰可以忽略不计，因此可以对此区域的紫外光充分利用。目前在通讯、预警等相关领域均有广泛应用，日盲型紫外探测器受到越来越多的关注，科研人员对相关的研究热度也一直很高。
较为常见的紫外光探测器器件有金属-半导体-金属(MSM)结构、肖特基结构、光电导型结构和p-i-n型结构，本发明制备了一种AlGaN基MSM结构日盲紫外探测器，具有制作简单、响应速度快等优点，同时，本发明也为日盲紫外光电探测器的研究和探索提供理论依据和技术支持。
发明内容
为了提供性能优异、质量好的AlGaN基MSM结构日盲型紫外探测器，一种AlGaN基MSM结构日盲型紫外探测器，包括：图形化蓝宝石衬底、ZnO缓冲层、非故意掺杂Al0.3Ga0.7N光吸收层、第一Ni/Au叉指电极、第二Ni/Au叉指电极，所述ZnO缓冲层位于图形化蓝宝石衬底上，且面积与图形化蓝宝石衬底相同，所述非故意掺杂Al0.3Ga0.7N光吸收层位于ZnO缓冲层上方，所述第一Ni/Au叉指电极位于非故意掺杂Al0.3Ga0.7N光吸收层上方，所述第二Ni/Au叉指电极位于图形化蓝宝石衬底上方，且与ZnO缓冲层平行布置。
进一步的，所述ZnO缓冲层厚度为0.1μm。
进一步的，所述非故意掺杂Al0.3Ga0.7N光吸收层厚度为0.1μm。
进一步的，所述第一Ni/Au叉指电极指间距为7μm，指宽为5μm，指长为500μm。
本发明同时公开了一种AlGaN基MSM结构日盲紫外探测器的制备方法，包括如下步骤：
首先对图形化蓝宝石衬底进行清洗，将依次其放入丙酮、乙醇中浸泡8分钟，再取出用去离子水淋洗，最后吹干即可；
采用金属有机物化学气相淀积技术在图形化蓝宝石衬底上生长获得外延结构ZnO缓冲层和非故意掺杂Al0.3Ga0.7N光吸收层，外延层生长温度为1000℃；
利用磁控溅射方法，在非故意掺杂Al0.3Ga0.7N光吸收层和图形化蓝宝石衬底上均先后溅射金属Ti层和Au层，形成第一Au/Ti叉指电极和第二Au/Ti叉指电极，溅射工艺条件如下：背底真空为1.5×10-4Pa，衬底温度为25℃，工作气氛为Ar气，工作气压为1Pa，溅射功率为45W，Ti层的溅射时间为40s，Au层的溅射时间为60s；
最后整个器件在300℃的N2氛围中快速热退火200s。
进一步的，所述金属有机物化学气相淀积技术是一种利用有机金属热分解反应进行气相外延生长薄膜的化学气相沉积技术。
进一步的，所述磁控溅射技术是一种材料镀膜技术，在电场和磁场的作用下，将二次电子束缚在特定区域，从而实现高速率溅射。
本发明的有益效果：(1)采用图形化蓝宝石衬底，相比普通的蓝宝石衬底，可以降低外延层材料的位错密度，提高外量子效率；(2)本发明采用ZnO缓冲层技术，可以获得极低暗电流。
附图说明
图1是本发明的结构示意图。
图中：1-图形化蓝宝石衬底，2-ZnO缓冲层，3-非故意掺杂Al0.3Ga0.7N光吸收层，4-第一Ni/Au叉指电极，5-第二Ni/Au叉指电极。
具体实施方式
下面结合附图与具体实例对本发明进行详细说明。
如图1所示：一种AlGaN基MSM结构日盲型紫外探测器，包括图形化蓝宝石衬底(1)、ZnO缓冲层(2)、非故意掺杂Al0.3Ga0.7N光吸收层(3)、第一Ni/Au叉指电极(4)、第二Ni/Au叉指电极(5)，所述ZnO缓冲层(2)位于图形化蓝宝石衬底(1)上，所述非故意掺杂Al0.3Ga0.7N光吸收层(3)位于ZnO缓冲层(2)上方，所述第一Ni/Au叉指电极(4)位于非故意掺杂Al0.3Ga0.7N光吸收层(3)上方，所述第二Ni/Au叉指电极(5)位于图形化蓝宝石衬底(1)上方，且与ZnO缓冲层(2)平行布置。
所述ZnO缓冲层(2)厚度为0.1μm。
所述ZnO缓冲层(2)面积与图形化蓝宝石衬底(1)面积相同。
所述非故意掺杂Al0.3Ga0.7N光吸收层(3)厚度为0.1μm。
所述第一Ni/Au叉指电极(4)指间距为7μm，指宽为5μm，指长为500μm。
一种AlGaN基MSM结构日盲紫外探测器的制备方法，首先对图形化蓝宝石衬底(1)进行清洗，将依次其放入丙酮、乙醇中浸泡8分钟，再取出用去离子水淋洗，最后吹干即可；在生长温度为1000℃的条件下，采用金属有机物化学气相淀积技术在图形化蓝宝石衬底(1)上生长获得外延结构ZnO缓冲层(2)和非故意掺杂Al0.3Ga0.7N光吸收层(3)；利用磁控溅射方法在非故意掺杂Al0.3Ga0.7N光吸收层(3)和图形化蓝宝石衬底(1)上先后溅射金属Ti层和Au层，获得第一Au/Ti叉指电极(4)和第二Au/Ti叉指电极(5)，最后整个器件在300℃的N2氛围中快速热退火200s。
所述磁控溅射方法的工艺条件如下：背底真空为1.5×10-4Pa，衬底温度为常温，工作气氛为Ar气，工作气压为1Pa，溅射功率为45W，Ti层的溅射时间为40s，Au层的溅射时间为60s。
Claims (7)
1.一种AlGaN基MSM结构日盲型紫外探测器，其特征在于：包括图形化蓝宝石衬底(1)、ZnO缓冲层(2)、非故意掺杂Al0.3Ga0.7N光吸收层(3)、第一Ni/Au叉指电极(4)、第二Ni/Au叉指电极(5)，所述ZnO缓冲层(2)位于图形化蓝宝石衬底(1)上，所述非故意掺杂Al0.3Ga0.7N光吸收层(3)位于ZnO缓冲层(2)上方，所述第一Ni/Au叉指电极(4)位于非故意掺杂Al0.3Ga0.7N光吸收层(3)上方，所述第二Ni/Au叉指电极(5)位于图形化蓝宝石衬底(1)上方，且与ZnO缓冲层(2)平行布置。
2.如权利要求1所述一种AlGaN基MSM结构日盲型紫外探测器，其特征在于，所述ZnO缓冲层(2)厚度为0.1μm。
3.如权利要求1或2所述一种AlGaN基MSM结构日盲型紫外探测器，其特征在于，所述ZnO缓冲层(2)面积与图形化蓝宝石衬底(1)面积相同。
4.如权利要求1所述一种AlGaN基MSM结构日盲型紫外探测器，其特征在于，所述非故意掺杂Al0.3Ga0.7N光吸收层厚度为0.1μm。
5.如权利要求1所述一种AlGaN基MSM结构日盲型紫外探测器，其特征在于，所述第一Ni/Au叉指电极指间距为7μm，指宽为5μm，指长为500μm。
6.一种AlGaN基MSM结构日盲紫外探测器的制备方法，其特征在于：首先对图形化蓝宝石衬底(1)进行清洗，将依次其放入丙酮、乙醇中浸泡8分钟，再取出用去离子水淋洗，最后吹干即可；在生长温度为1000℃的条件下，采用金属有机物化学气相淀积技术在图形化蓝宝石衬底(1)上生长获得外延结构ZnO缓冲层(2)和非故意掺杂Al0.3Ga0.7N光吸收层(3)；利用磁控溅射方法在非故意掺杂Al0.3Ga0.7N光吸收层(3)和图形化蓝宝石衬底(1)上先后溅射金属Ti层和Au层，获得第一Au/Ti叉指电极(4)和第二Au/Ti叉指电极(5)，最后整个器件在300℃的N2氛围中快速热退火200s。
7.如权利要求6所述一种AlGaN基MSM结构日盲紫外探测器的制备方法，其特征在于，所述磁控溅射方法的工艺条件如下：背底真空为1.5×10-4Pa，衬底温度为常温，工作气氛为Ar气，工作气压为1Pa，溅射功率为45W，Ti层的溅射时间为40s，Au层的溅射时间为60s。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810902286.0A CN109103267A (zh) | 2018-08-09 | 2018-08-09 | 一种AlGaN基MSM结构日盲型紫外探测器及其制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810902286.0A CN109103267A (zh) | 2018-08-09 | 2018-08-09 | 一种AlGaN基MSM结构日盲型紫外探测器及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109103267A true CN109103267A (zh) | 2018-12-28 |
Family
ID=64849260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810902286.0A Withdrawn CN109103267A (zh) | 2018-08-09 | 2018-08-09 | 一种AlGaN基MSM结构日盲型紫外探测器及其制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109103267A (zh) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361046A (zh) * | 2011-09-30 | 2012-02-22 | 天津大学 | AlGaN基MSM结构日盲型紫外探测器及其制备方法 |
| CN103258869A (zh) * | 2013-05-07 | 2013-08-21 | 哈尔滨工业大学 | 基于氧化锌材料的紫外红外双色探测器及其制作方法 |
| CN106960887A (zh) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | 一种铝镓氮基日盲紫外探测器及其制备方法 |
| CN107863413A (zh) * | 2017-11-02 | 2018-03-30 | 中山大学 | 一种AlGaN基日盲紫外雪崩异质结光电晶体管探测器及其制备方法 |
-
2018
- 2018-08-09 CN CN201810902286.0A patent/CN109103267A/zh not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102361046A (zh) * | 2011-09-30 | 2012-02-22 | 天津大学 | AlGaN基MSM结构日盲型紫外探测器及其制备方法 |
| CN103258869A (zh) * | 2013-05-07 | 2013-08-21 | 哈尔滨工业大学 | 基于氧化锌材料的紫外红外双色探测器及其制作方法 |
| CN106960887A (zh) * | 2017-05-02 | 2017-07-18 | 常熟理工学院 | 一种铝镓氮基日盲紫外探测器及其制备方法 |
| CN107863413A (zh) * | 2017-11-02 | 2018-03-30 | 中山大学 | 一种AlGaN基日盲紫外雪崩异质结光电晶体管探测器及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110676339B (zh) | 一种氧化镓纳米晶薄膜日盲紫外探测器及其制备方法 | |
| CN106449894B (zh) | 基于双异质结的Ga2O3/GaN/SiC光电探测二极管及其制备方法 | |
| CN109037374B (zh) | 基于NiO/Ga2O3的紫外光电二极管及其制备方法 | |
| CN110061089B (zh) | 蓝宝石斜切衬底优化氧化镓薄膜生长及日盲紫外探测器性能的方法 | |
| CN107591487B (zh) | 平面型光电探测器及其制备方法 | |
| CN102779891B (zh) | 铜铟镓硒薄膜型太阳能电池装置及其制备方法 | |
| CN109461790A (zh) | 氧化镓/石墨烯异质结零功耗光电探测器及其制造方法 | |
| CN102569508A (zh) | 一种纳米线阵列结构薄膜太阳能光伏电池及其制备方法 | |
| CN110729376B (zh) | 基于氧化镍/β-三氧化二镓异质结的紫外探测器及其制备方法 | |
| CN106340551B (zh) | 一种基于Mg:β-Ga2O3/NSTO异质结的零功耗日盲紫外探测器及其制备方法 | |
| CN112563353B (zh) | 一种异质结紫外探测器及其制备方法 | |
| CN103441154A (zh) | 一种ZnO纳米阵列紫外探测器及其制作方法 | |
| CN104143579A (zh) | 一种锑基化合物薄膜太阳能电池及其制备方法 | |
| CN107195724B (zh) | 一种应用石墨烯电极在GaN自支撑衬底上制备AlGaN肖特基日盲紫外探测器的方法 | |
| CN108346712B (zh) | 一种硅掺杂氮化硼/石墨烯的pn结型紫外探测器制备方法 | |
| TW201907574A (zh) | 二維電子元件與相關製造方法 | |
| CN112103354A (zh) | 透明Ga2O3的p-i-n异质结构日盲型紫外光探测器及其制备方法 | |
| CN103227230A (zh) | 一种侧向生长ZnMgO纳米线日盲区紫外探测器及其制备方法 | |
| CN109037386A (zh) | 基于氧化镁衬底的氧化镓薄膜光电探测器及其制造方法 | |
| CN107425090B (zh) | 垂直型光电探测器及其制备方法 | |
| CN109148635A (zh) | CuAlO2/Ga2O3紫外光电二极管及制备方法 | |
| CN109256438A (zh) | 一种硅基非晶氧化镓薄膜日盲光电晶体管及其制造方法 | |
| CN103985783B (zh) | 利用磁控溅射法在柔性衬底上制备铜锌锡硫薄膜的方法 | |
| CN109103267A (zh) | 一种AlGaN基MSM结构日盲型紫外探测器及其制备方法 | |
| CN107230735B (zh) | 具有缓冲层的CdZnTe薄膜光电探测器的制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181228 |