CN109075215B - 具有掉电保护的输出驱动 - Google Patents

具有掉电保护的输出驱动 Download PDF

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Publication number
CN109075215B
CN109075215B CN201780013156.5A CN201780013156A CN109075215B CN 109075215 B CN109075215 B CN 109075215B CN 201780013156 A CN201780013156 A CN 201780013156A CN 109075215 B CN109075215 B CN 109075215B
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China
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region
doped
doped region
coupled
transistor
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CN201780013156.5A
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English (en)
Chinese (zh)
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CN109075215A (zh
Inventor
X·吴
R·克勒斯
S·普拉萨德
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
CN201780013156.5A 2016-03-01 2017-03-01 具有掉电保护的输出驱动 Active CN109075215B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662301804P 2016-03-01 2016-03-01
US62/301,804 2016-03-01
US15/386,252 US10498326B2 (en) 2016-03-01 2016-12-21 Output driver with power down protection
US15/386,252 2016-12-21
PCT/US2017/020294 WO2017151827A1 (en) 2016-03-01 2017-03-01 Output drive with power down protection

Publications (2)

Publication Number Publication Date
CN109075215A CN109075215A (zh) 2018-12-21
CN109075215B true CN109075215B (zh) 2022-04-08

Family

ID=59724427

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780013156.5A Active CN109075215B (zh) 2016-03-01 2017-03-01 具有掉电保护的输出驱动

Country Status (4)

Country Link
US (1) US10498326B2 (https=)
JP (1) JP6916536B2 (https=)
CN (1) CN109075215B (https=)
WO (1) WO2017151827A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573639B2 (en) 2016-02-29 2020-02-25 Globalfoundries Singapore Pte. Ltd. Silicon controlled rectifier (SCR) based ESD protection device
US10283584B2 (en) * 2016-09-27 2019-05-07 Globalfoundries Inc. Capacitive structure in a semiconductor device having reduced capacitance variability
US12027612B2 (en) * 2021-01-14 2024-07-02 Texas Instruments Incorporated SCR having selective well contacts

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101405867A (zh) * 2002-09-29 2009-04-08 先进模拟科技公司 一种模块化双极-cmos-dmos模拟集成电路和功率晶体管技术
CN102097441A (zh) * 2010-12-17 2011-06-15 电子科技大学 用于等离子显示屏驱动芯片的soi器件
CN104969355A (zh) * 2013-01-30 2015-10-07 密克罗奇普技术公司 Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
DE69427025T2 (de) * 1994-08-31 2001-09-27 Stmicroelectronics S.R.L., Agrate Brianza Doppelquellenspannungsversorgungsschaltung
EP1494354B1 (en) 2003-07-04 2010-12-01 Dialog Semiconductor GmbH High-voltage interface and driver control circuit
US7166876B2 (en) 2004-04-28 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET with electrostatic discharge protection structure and method of fabrication
EP2028760B1 (en) * 2007-08-22 2020-06-17 Semiconductor Components Industries, LLC A low side driver
US8049250B2 (en) * 2008-10-27 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method for power clamp triggered dual SCR ESD protection
US8344789B2 (en) * 2010-01-20 2013-01-01 Intersil Americas Inc. Analog switch with internal device body control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101405867A (zh) * 2002-09-29 2009-04-08 先进模拟科技公司 一种模块化双极-cmos-dmos模拟集成电路和功率晶体管技术
CN102097441A (zh) * 2010-12-17 2011-06-15 电子科技大学 用于等离子显示屏驱动芯片的soi器件
CN104969355A (zh) * 2013-01-30 2015-10-07 密克罗奇普技术公司 Esd自我保护及含该保护的lin总线驱动器的dmos半导体装置

Also Published As

Publication number Publication date
JP2019511113A (ja) 2019-04-18
US10498326B2 (en) 2019-12-03
CN109075215A (zh) 2018-12-21
WO2017151827A8 (en) 2018-11-01
WO2017151827A1 (en) 2017-09-08
JP6916536B2 (ja) 2021-08-11
US20170257088A1 (en) 2017-09-07

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