CN109065714B - Based on a-SiOxNySPR (surface plasmon resonance) nerve synapse device with memristive effect and preparation method thereof - Google Patents
Based on a-SiOxNySPR (surface plasmon resonance) nerve synapse device with memristive effect and preparation method thereof Download PDFInfo
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Abstract
Based on a-SiOxNySPR (surface plasmon resonance) nerve synapse device with memristive effect and a preparation method thereof belong to the technical field of bionic devices. The invention combines a crystalline silicon prism with a top electrode/a-SiOxNyThe metal nano-particle double-resistance-change layer/bottom electrode memristor structure is coupled, so that an optical signal under electrical modulation is transmitted into the double-resistance-change layer through the crystalline silicon prism, and the dielectric constant change information of the resistance-change layer is read by the optical signal in the working process of the device by using the Surface Plasmon Resonance (SPR) effect, thereby realizing the optical reading of the synaptic weight of the device. The electrical modulation and optical reading nerve synapse device provided by the invention has incomparable advantages compared with the traditional electrical modulation and electrical reading nerve synapse device, and has the characteristics of low energy consumption, non-volatility and the like of the traditional memristor, and also has the advantages of large signal processing bandwidth and strong anti-electromagnetic interference capability by taking light as an information carrier.
Description
Technical Field
The invention belongs to the technical field of bionic devices, and particularly relates to a-SiO-based bionic devicexNySPR (surface plasmon resonance) nerve synapse device with memristive effect and a preparation method thereof.
Background
The traditional computer is based on a von neumann architecture, however, in the von neumann architecture, data calling and transmission between an information memory and a processor are connected through a bus, so that the efficiency of information processing is influenced by not only the operation rate and the storage rate of the processor, but also the information transmission capability of the bus, and a so-called von neumann bottleneck is formed. Although the amount of information processed by the human brain is not less than that of a computer, the efficiency is obviously higher and the energy consumption is smaller. Therefore, researchers build the idea of intelligent computers, and hopefully, the computers are enabled to learn the neural network to better simulate the functions of human brains, and the computers which are closer to the human brains are manufactured. Therefore, research and development of a neuro-bionic computer which has human-brain-like self-adaptive capacity and can process various information in parallel is always a research hotspot in the future computer field. Biophysical studies indicate that the completion of brain function is indistinguishable from the synapse, and the plasticity of the synapse is the basis for the brain to simultaneously complete information storage and processing. Therefore, biomimetic simulation of the neural synapses is an important step in artificial neural network research and is also the key to the research of neuromorphic computers and other intelligent terminals.
In the field of intelligent devices and neurosynaptic simulation research, a memristor draws attention of researchers through novel characteristics of the memristor, and the researchers find that according to a theoretical model of the memristor, the resistance value of the memristor can change along with the application of voltage and can remember the changed state, the unique nonlinear transmission characteristic of the memristor has high similarity with the behavior and principle of the neurosynaptic in a biological brain. The similarity enables the memristor to be very suitable for serving as a nerve synapse bionic device, and the memristor is used for constructing a nerve morphology chip and further used for an artificial neural network. In a conventional neuromorphic chip, transistors are the basic unit for constructing biomimetic synapses. However, the transistor-based bionic synapse device is not only bulky, high in energy consumption and poor in learning ability, but also has to reconstruct a circuit to form a new weight. In contrast, memristors are a superior biomimetic synapse device. The memristor is used as a bionic synapse device, so that the memristor is small in size, low in power consumption and high in cycle frequency, the working state (the resistance value after excitation) of the memristor is maintained without energy (namely, the memristor has self-sustaining property), and more importantly, the resistance value of the memristor has continuous adjustability. However, the memristor still has defects, and at present, in a neuromorphic chip constructed based on the memristor (namely, a resistive random access memory ReRAM) at home and abroad, electric signals are used as information media to write and read synaptic weights, namely, an 'electric modulation and electric reading' mode, and the main defects of the working mode are that the signal processing bandwidth is small, and crosstalk is easily generated in the electric signal transmission process.
Disclosure of Invention
In view of the above, the invention provides an a-SiO-based bionic synapse for solving the problems that the signal processing bandwidth is small and crosstalk is easy to occur in the signal transmission process when the existing bionic synapse based on the memristor worksxNyAn optical reading SPR (surface plasmon resonance) nerve synapse device with a memristive effect and a preparation method thereof. The invention makes the nerve synapse device use the optical signal as the information medium through the reasonable structure design, and reads the synapse weight by using the light intensity to represent the synapse weight, thereby breaking through the bandwidth limitation and the electromagnetic interference of the traditional nerve synapse device signal processing.
In order to achieve the purpose, the invention adopts the following technical scheme:
on the one hand, the invention provides a catalyst based on a-SiOxNySPR nerve synapse device of memristive effect, characterized in that: comprises a memristor and a crystalline silicon prism arranged above the memristor, wherein the memristor is provided with a bottom electrode/a first a-SiO from bottom to topxNyResistive layer/second a-SiOxNyThe resistance change layer/top electrode is of a vertical four-layer structure, and the refractive index of the crystalline silicon prism is not less than that of the second a-SiOxNyThe refractive index of the resistance-change layer enables the near-infrared light under electrical modulation to be emitted to the first a-SiO through the crystalline silicon prismxNyResistive layer/second a-SiOxNyIn the case of dual-resistance-change layer, the top electrode and the second a-SiOxNyPlasma resonance is generated at the interface between the resistance change layers, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the near infrared light is 800 nm-1700 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxNyA resistance change layer and a first a-SiOxNyThe change of the interface position between the resistance change layers can realize the continuous change of the resistance of the double resistance change layers orAnd the continuous change of the synapse weight further realizes the functions of electrical modulation and optical reading of the SPR nerve synapse device.
Further, a crystalline silicon wafer is arranged between the memristor and the crystalline silicon prism.
Furthermore, the top electrode is made of metal silver or gold, and the thickness of the top electrode is 30 nm-60 nm.
Furthermore, the material of the bottom electrode in the invention is selected from metal platinum or metal aluminum, and the thickness of the bottom electrode is 100 nm-500 nm. In a preferred embodiment, the bottom electrode is a circular electrode array, the diameter of the array unit is 5 μm to 300 μm, and the edge distance between adjacent array units is 5 μm to 20 μm.
Further, the first a-SiO in the present inventionxNyThe resistive layer may be pure a-SiOxNyThe film may be a-SiO containing metal nanoparticlesxNyA film; second a-SiO in the inventionxNyThe resistance change layer is a-SiO containing metal nano-particlesxNyA film, and the content of metal nanoparticles is higher than that of the first a-SiOxNyMetal nanoparticle content of the resistance change layer. The metal nanoparticles are selected from Ag, Cu or Al.
Preferably, the first a-SiOxNyThe volume percentage of the metal nano particles of the resistance change layer is not higher than 10 percent, and the second a-SiO isxNyThe volume percentage of the metal particles of the resistance change layer is 20-45%.
In a-SiOxNyThe metal-rich layer and the metal-deficient layer are prepared by the material and used for realizing the adjustability of the resistance of the device. Because the metal-rich layer has higher conductivity than the metal-poor layer, a uniform conductive front end interface exists between the two layers, and the conductive front end moves towards the metal-rich layer (or the metal-poor layer) along with the applied voltage, so that the proportion of the metal-rich layer (or the metal-poor layer) in the whole device becomes smaller, and the conductivity is increased (reduced).
Further, the first a-SiO in the present inventionxNyThe resistance change layer is intrinsic amorphous silicon oxynitride prepared by sputteringa-SiOxNy) Film or amorphous silicon oxynitride (a-SiO) containing Ag, Cu and Al metal nanoparticles prepared by co-sputtering methodxNy) The film has a thickness of 30nm to 100 nm.
Further, the second a-SiO in the present inventionxNyThe resistance change layer is amorphous silicon oxynitride (a-SiO) containing one of Ag, Cu and Al metal nanoparticles prepared by a co-sputtering methodxNy) The film has a thickness of 10nm to 50 nm.
Furthermore, the optical signal is TM polarized light, and the wavelength range of the optical signal is 800 nm-1700 nm.
In another aspect, the present invention provides a composition based on the above a-SiOxNyThe preparation method of the SPR nerve synapse device with the memristive effect is characterized by comprising the following steps of:
step A: manufacturing of memristors:
a1: depositing a metal layer on the bottom surface of the crystalline silicon wafer as a top electrode;
a2: forming a double-resistance-change layer window on the bottom surface of the top electrode, and then sequentially depositing a-SiO on the bottom surface of the top electrode which is coated with glue and patternedxNyFilm as the second a-SiOxNyA resistance change layer and a first a-SiOxNyA resistance change layer of the first a-SiOxNyThe resistance change layer is an intrinsic amorphous silicon oxynitride film or amorphous silicon oxynitride (a-SiO) containing metal nanoparticlesxNy) Film of the second a-SiOxNyThe resistance change layer is amorphous silicon oxynitride (a-SiO) containing metal nanoparticlesxNy) A film having a metal nanoparticle content higher than that of the first a-SiOxNyThe resistance change layer is high, and redundant second a-SiO is stripped after deposition is finishedxNyResistive layer/first a-SiOxNyThe resistance-change layer is a double resistance-change layer;
a3: in the first a-SiOxNyForming a bottom electrode pattern on the bottom surface of the resistance change layer, and coating and patterning the first a-SiOxNyDepositing a metal layer on the resistance change layer until the deposition is finishedThen stripping off the redundant metal layer to obtain the first a-SiOxNyA bottom electrode on the bottom surface of the resistance change layer; thus, a memristor is prepared;
and B: manufacturing a neurosynaptic device:
and D, bonding the crystalline silicon prism with the memristor obtained in the step A, and thus finishing the preparation of the SPR nerve synapse device.
Further, the memristor can be directly manufactured on the bottom surface of the crystalline silicon prism, namely, the bonding operation of the crystalline silicon wafer and the crystalline silicon prism is omitted, and the bottom electrode/the first a-SiO is directly manufactured on the bottom surface of the crystalline silicon prismxNyResistive layer/second a-SiOxNyThe resistance change layer/top electrode is vertical to the memristor with the four-layer structure.
Further, in the present invention, the bottom electrode, the first a-SiOxNyA resistance change layer and a second a-SiOxNyThe deposition of the resistance change layer is realized by combining a physical vapor deposition method with a photoetching process.
The basic principle of the invention is as follows: the refractive index of the crystalline silicon prism is larger than that of the double resistance change layer, so that when the incident light with specific wavelength is from the incident surface of the crystalline silicon prism at the incident angle thetasWhen the incident light strikes the bottom of the crystalline silicon prism or the crystalline silicon wafer, the incident light generates evanescent waves on the surface of the top electrode below the crystalline silicon prism or the crystalline silicon wafer, and further generates Surface Plasmon Resonance (SPR) at the interface of the top electrode/a second-Si resistance change layer, so that the incident angle theta is metsIs strongly absorbed and the strongly absorbed optical signal is reflected from the exit face of the crystalline silicon prism and output with a minimum amplitude. The second a-SiO when a bias voltage is applied between the top and bottom electrodes of the device (electrical modulation)xNyA resistance change layer and a first a-SiOxNyThe interface of the resistive layer moves under the action of the electric field, so that the dielectric constant of the dual resistive layer between the top electrode and the bottom electrode is changed, and the Surface Plasmon Resonance (SPR) condition of the incident light and the top electrode is changed accordingly, if the light signal still has the same incident angle theta as the above-mentioned incident angle thetasInto a crystalline silicon prism or crystal siliconWhen the wafer is at the bottom, due to the fact that the SPR condition of the incident light and the top electrode changes, namely the condition of the minimum light amplitude is destroyed, the plasma absorption effect is weakened, and the intensity of an output light signal detected on the emergent surface of the crystalline silicon prism is enhanced; at this time, it is necessary to change the incident angle θ of the incident lightsSo that the incident light and the top electrode satisfy the SPR condition again, and the optical signal output from the exit surface of the crystalline silicon prism after reflection has the minimum amplitude, specifically, the second a-SiO is made to have the minimum amplitude by changing the bias condition (electrical modulation) of the voltage applied between the top electrode and the bottom electrodexNyA resistance change layer and a first a-SiOxNyThe interface transition of the resistive layer is performed in a gradual and reversible manner (positive and negative voltage switching). For any of the second a-SiOxNyA resistance change layer and a first a-SiOxNyInterface position between resistive layers (which corresponds to synaptic weight), light incident angle θ satisfying SPR conditionsIs always unique. Thus, during one cycle of electrical modulation, the second a-SiO is driven by the bias voltagexNyA resistance change layer and a first a-SiOxNyThe change of the interface position between the resistance change layers can realize the' first a-SiOxNyResistive layer/second a-SiOxNyThe resistance value of the double-resistance-change layer of the resistance-change layer or the synapse weight is continuously changed, so that the incident angle theta meeting the SPR conditionsWith the consequent change. Obviously, in the neurosynaptic device provided by the invention, the synaptic weight and the surface plasmon resonance incidence angle thetasThere is a one-to-one correspondence relationship based on which "electrical modulation, optical readout" of the memristive neurosynaptic device is achieved.
Compared with the prior art, the invention has the following beneficial effects:
the invention relates to a neurosynaptic device which combines a microelectronic element memristor and an optical prism, in particular to a large-refractive-index element, namely a crystalline silicon prism and a top electrode/a-SiOxNyMetal nano particle double resistance change layer/bottom electrode memristor structure coupling to ensure incident light to enter along material with larger refractive indexThe double-resistance variable layer with the smaller refractive index is beneficial to avoiding grazing incidence and reducing optical loss, and the dielectric constant change information of the resistance variable layer is read by optical signals in the working process of the device by using the Surface Plasmon Resonance (SPR) effect, so that the optical reading of the synapse weight is realized. Because the optical signal has the characteristics of large bandwidth and strong anti-electromagnetic interference capability, the electrical modulation and optical reading nerve synapse device provided by the invention has the advantages which are incomparable to the traditional electrical modulation and electrical reading nerve synapse device, not only has the characteristics of low energy consumption, non-volatility and the like of the traditional memristor, but also has the advantages of large signal processing bandwidth and strong anti-electromagnetic interference capability by taking the optical signal as an information carrier.
Drawings
Fig. 1 is a schematic side view of a device structure 1 of the present invention.
Fig. 2 is a schematic top view of a device structure 2 of the present invention.
Fig. 3 is a schematic top view of a device structure of the present invention.
The reference numerals in the drawings mean:
1 is a bottom electrode, 2 is a first a-SiOxNyA resistance change layer, 3 is a second a-SiOxNyAnd the resistance change layer, 4 is a top electrode, 5 is a crystalline silicon wafer, and 6 is a crystalline silicon prism.
Detailed Description
The technical solutions of the present invention will be described in detail and fully with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can understand the principles and features of the present invention.
Example 1:
based on a-SiOxNyThe structure of the SPR nerve synapse device with the memristive effect is shown in figure 1: the memristor comprises a memristor and a crystalline silicon prism 6 arranged above the memristor, wherein the crystalline silicon prism 6 is a triangular prism processed by crystalline silicon, and the memristor is provided with a bottom electrode 1/a first a-SiOxNy Resistive layer 2/second a-SiOxNyThe resistive layer 3/top electrode 4' is of a vertical four-layer structure, in this embodiment the top electrode 4 is deposited on the crystalSilver Ag, second a-SiO on the bottom of silicon prism 6xNyThe resistance change layer 3 is a-SiO containing Ag nano particlesxNyA film of Ag nanoparticles in a volume fraction of 40%, a first a-SiOxNyThe resistance change layer 2 is a-SiO containing Ag nano particlesxNyA film with Ag nanoparticles volume fraction of 5%, a top electrode 4 deposited on the first a-SiOxNyThe metal platinum Pt on the bottom surface of the resistance change layer 2; the refractive index of the crystalline silicon prism 6 is not less than that of the second a-SiOxNyThe refractive index of the resistive layer 3 is such that under electrical modulation, i.e. adjustment of the voltage applied between the top electrode 4 and the bottom electrode 1, an optical signal is injected through the crystalline silicon prism to the "first a-SiOxNy Resistive layer 2/second a-SiOxNy Resistive layer 3 "double resistive layer, at the top electrode 4 and the second a-SiOxNyPlasma resonance is generated at the interface between the resistance-change layers 3, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the optical signals is 800 nm-1700 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxNyA resistance change layer and a first a-SiOxNyThe change of the interface position between the resistive layers can realize the continuous change of the resistance value of the double resistive layers or the continuous change of the synapse weight, thereby realizing the functions of 'electrical modulation and optical reading' of the SPR nerve synapse device.
The above-mentioned a-SiO-based material is also provided belowxNyThe preparation method of the SPR nerve synapse device with the memristive effect comprises the following specific process flows:
the method comprises the following steps: preparing a crystalline silicon prism 6, wherein the length and the width of the bottom surface of the crystalline silicon prism are both 15 mm;
step two: cleaning and drying the crystalline silicon prism 6;
step three: forming a metal silver film with the thickness of 60nm on the bottom surface of the crystalline silicon prism 6 by adopting a physical vapor deposition method to serve as a top electrode 4;
step four: a layer of photoresist is coated on the surface of the top electrode 4 in a spinning way, and the photoresist is photoetched by utilizing a mask plateDeveloping and the like to form a memristor window which is positioned in the center of the bottom surface of the prism and has the length and width of 10mm multiplied by 10 mm; a second a-SiO with the thickness of 50nm and containing 40 percent of metal silver nano particles is sequentially deposited on the glued and patterned top electrode 4 by adopting a co-sputtering methodxNyA resistance change layer 3 and a first a-SiO containing 5% metallic silver nanoparticlesxNyA resistance change layer 2; stripping off the first a-SiO 10mm above the top electrode 4xNyResistive layer 2/second a-SiOxNyThe resistance-change layer 3' is double resistance-change layers, and a top electrode lead-out window with the width of 2.5mm is obtained;
step five: in the first a-SiOxNySpin-coating a layer of photoresist on the surface of the resistance change layer 2, and forming a first a-SiO layer by using a mask through photoetching, developing and other stepsxNyA bottom electrode pattern on the bottom surface of the resistance change layer 2, in the present embodiment, an electrode array pattern as shown in fig. 3 is adopted; then adopting a co-sputtering method to coat the first a-SiO which is coated and patternedxNyDepositing platinum Pt on the resistance changing layer 2; stripping redundant metal platinum Pt by using a stripping process to prepare a bottom electrode 1; thus completing the preparation of the device;
step 6: and finally, electrodes are respectively led out from the top electrode 4 and the bottom electrode 1, so that the function test of the nerve synapse device is convenient to realize.
Example 2:
based on a-SiOxNyThe structure of the SPR nerve synapse device with the memristive effect is shown in figure 2: the memory resistor comprises a crystalline silicon wafer 5, a memory resistor carried by the crystalline silicon wafer and a crystalline silicon prism 6 arranged above the crystalline silicon wafer 5, wherein the crystalline silicon prism 6 is a prism processed by crystalline silicon, the crystalline silicon wafer 5 is also processed by crystalline silicon, and the crystalline silicon wafers 5 and the crystalline silicon prisms 6 are preferably bonded by adopting refractive index matching fluid; the memristor is provided with a bottom electrode 1/first a-SiO from bottom to topxNyResistive layer 2/second a-SiOxNyThe resistance change layer 3/top electrode 4' is vertical to a four-layer structure, in the embodiment, the top electrode 4 is metal silver Ag deposited on the bottom surface of the crystalline silicon wafer 5, and the second a-SiOxNyResistance change layer3 is a-SiO containing Ag nano-particlesxNyA film of Ag nanoparticles in a volume fraction of 40%, a first a-SiOxNyThe resistance change layer 2 is a-SiO containing Ag nano particlesxNyA film with Ag nanoparticles volume fraction of 5%, a bottom electrode 1 deposited on the first a-SiOxNyThe metal aluminum Al on the bottom surface of the resistance change layer 2; the refractive index of the crystalline silicon prism 6 is not less than that of the second a-SiOxNyThe refractive index of the resistive layer 3 is such that under electrical modulation, i.e. adjustment of the voltage applied between the top electrode 4 and the bottom electrode 1, an optical signal is injected through the crystalline silicon prism to the "first a-SiOxNyResistive layer 2/second a-SiOxNyIn the case of a dual-resistance layer of the resistance change layer 3', at the top electrode 4 and the second a-SiOxNyPlasma resonance is generated at the interface between the resistance-change layers 3, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the optical signals is 800 nm-1700 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxNyA resistance change layer and a first a-SiOxNyThe change of the interface position between the resistive layers can realize the continuous change of the resistance value of the double resistive layers or the continuous change of the synapse weight, thereby realizing the functions of 'electrical modulation and optical reading' of the SPR nerve synapse device.
The above-mentioned a-SiO-based material is also provided belowxNyThe preparation method of the SPR nerve synapse device with the memristive effect comprises the following specific process flows:
the method comprises the following steps: preparing a crystalline silicon prism 6 and a crystalline silicon wafer 5 made of the same material, wherein the length and the width of the bottom surface of the crystalline silicon prism 6 are both 15mm, the length and the width of the crystalline silicon wafer 5 are both 15mm, and the thickness of the crystalline silicon wafer 5 is 1.1 mm;
step two: cleaning and drying the crystalline silicon prism 6 and the crystalline silicon wafer 5;
step three: forming a metal silver film with the thickness of 60nm on the bottom surface of the crystalline silicon wafer 5 by adopting a physical vapor deposition method to serve as a top electrode 4;
step four: spin-coating one on the surface of the top electrode 4Forming a layer of photoresist, and carrying out photoetching, development and other steps by using a mask plate to form a memristor window which is positioned in the center of the bottom surface of the prism and has the length and the width of 10mm multiplied by 10 mm; a second a-SiO with the thickness of 50nm and containing 40 percent of metal silver nano particles is sequentially deposited on the glued and patterned top electrode 4 by adopting a co-sputtering methodxNyA resistance change layer 3 and a first a-SiO containing 5% metallic silver nanoparticlesxNyA resistance change layer 2; stripping off the first a-SiO 10mm above the top electrode 4xNyResistive layer 2/second a-SiOxNyThe resistance-change layer 3' is double resistance-change layers, and a top electrode lead-out window with the width of 2.5mm is obtained;
step five: in the first a-SiOxNySpin-coating a layer of photoresist on the surface of the resistance change layer 2, and forming a first a-SiO layer by using a mask through photoetching, developing and other stepsxNyA bottom electrode pattern on the bottom surface of the resistance change layer 2, in the present embodiment, an electrode array pattern as shown in fig. 3 is adopted; then adopting magnetron sputtering method to coat the first a-SiO which is coated with glue and patternedxNyDepositing metal aluminum Al on the resistance changing layer 2; stripping excessive metal aluminum Al by using a stripping process to prepare a bottom electrode 1;
step 6: coupling the bottom surface of the crystalline silicon prism 6 with one surface of the crystalline silicon wafer 5, on which the memristor is not deposited, by using a refractive index matching fluid, so as to finish the preparation of the device;
and 7: and finally, electrodes are respectively led out from the top electrode 4 and the bottom electrode 1, so that the function test of the nerve synapse device is convenient to realize.
While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. Based on a-SiOxNySPR (surface plasmon resonance) nerve synapse device with memristive effect, and its characteristicsThe method comprises the following steps: comprises a memristor and a crystalline silicon prism arranged above the memristor, wherein the memristor is provided with a bottom electrode/a first a-SiO from bottom to topxNyResistive layer/second a-SiOxNyThe resistance change layer/top electrode is of a vertical four-layer structure, and the refractive index of the crystalline silicon prism is not less than that of the second a-SiOxNyThe refractive index of the resistance-change layer enables the near-infrared light under electrical modulation to be emitted to the 'first a-SiO' through the crystalline silicon prismxNyResistive layer/second a-SiOxNyIn the case of dual-resistance-change layer, the top electrode and the second a-SiOxNyPlasma resonance is generated at the interface between the resistance change layers, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the near infrared light is 800 nm-1700 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxNyA resistance change layer and a first a-SiOxNyThe change of the interface position between the resistive layers can realize the continuous change of the resistance value of the double resistive layers or the continuous change of the synapse weight, thereby realizing the functions of 'electrical modulation and optical reading' of the SPR nerve synapse device.
2. a-SiO-based material according to claim 1xNySPR nerve synapse device of memristive effect, characterized in that: and a crystalline silicon wafer is arranged between the memristor and the crystalline silicon prism.
3. a-SiO-based material according to claim 1xNySPR nerve synapse device of memristive effect, characterized in that: the top electrode is made of metal silver or gold, and the thickness of the top electrode is 30-60 nm; the bottom electrode is made of metal platinum or metal aluminum, and the thickness of the bottom electrode is 100 nm-500 nm.
4. a-SiO-based material according to claim 1xNySPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxNyThe resistance change layer is pure a-SiOxNyThin film or a-SiO containing metal nano-particlesxNyA film; the second a-SiOxNyThe resistance change layer is a-SiO containing metal nano-particlesxNyA film; the metal nanoparticles are selected from Ag, Cu or Al.
5. a-SiO-based material according to claim 1xNySPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxNyThe resistance change layer is a-SiO containing metal nano-particlesxNyA film; the second a-SiOxNyThe resistance change layer is a-SiO containing metal nano-particlesxNyA thin film, and the second a-SiOxNyThe content of metal nano particles in the resistance change layer is higher than that of the first a-SiOxNyThe content of metal nanoparticles in the resistance change layer; the metal nanoparticles are selected from Ag, Cu or Al.
6. a-SiO-based material according to claim 1xNySPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxNyThe volume percentage of the metal nanoparticles in the resistance change layer is not higher than 10%; the second a-SiOxNyThe volume percentage of the metal particles of the resistance change layer is 20-45%.
7. a-SiO-based material according to claim 1xNySPR nerve synapse device of memristive effect, characterized in that: the near infrared light is TM polarized light.
8. a-SiO-based material according to claim 1xNySPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxNyThe thickness of the resistance change layer is 30 nm-100 nm; the second a-SiOxNyThe thickness of the resistance change layer is 10 nm-50 nm.
9. Based on a-SiOxNyThe preparation method of the SPR nerve synapse device with the memristive effect is characterized by comprising the following steps of:
step A: manufacturing of memristors:
a1: depositing a metal layer on the bottom surface of the crystalline silicon wafer as a top electrode;
a2: forming a double-resistance-change layer window on the bottom surface of the top electrode, and then sequentially and twice depositing a-SiO on the bottom surface of the top electrode which is coated with glue and patternedxNyThe film is used as the second a-SiO in turnxNyA resistance change layer and a first a-SiOxNyA resistance change layer of the first a-SiOxNyThe resistance change layer is intrinsic a-SiOxNyThin film or a-SiO containing metal nanoparticlesxNyFilm of the second a-SiOxNyThe resistance change layer is a-SiO containing metal nano-particlesxNyA film having a metal nanoparticle content higher than that of the first a-SiOxNyThe resistance change layer is high, and redundant second a-SiO is stripped after deposition is finishedxNyResistive layer/first a-SiOxNyThe resistance-change layer is a double resistance-change layer;
a3: in the first a-SiOxNyForming a bottom electrode pattern on the bottom surface of the resistance change layer, and coating and patterning the first a-SiOxNyDepositing a metal layer on the resistance change layer, and stripping redundant metal layers after deposition is finished to obtain a first a-SiOxNyA bottom electrode on the bottom surface of the resistance change layer; thus, a memristor is prepared;
and B: manufacturing a neurosynaptic device:
and D, bonding the crystalline silicon prism with the memristor obtained in the step A, and thus finishing the preparation of the SPR nerve synapse device.
10. a-SiO based on claim 9xNyThe preparation method of the SPR nerve synapse device with the memristive effect is characterized by comprising the following steps: the memristor is directly manufactured on the bottom surface of the crystalline silicon prism.
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