CN109037442B - Based on a-SiOxSPR (surface plasmon resonance) nerve synapse device with memristive effect and preparation method thereof - Google Patents
Based on a-SiOxSPR (surface plasmon resonance) nerve synapse device with memristive effect and preparation method thereof Download PDFInfo
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- 210000000225 synapse Anatomy 0.000 title claims abstract description 48
- 210000005036 nerve Anatomy 0.000 title claims abstract description 34
- 230000000694 effects Effects 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 title abstract description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 89
- 230000008859 change Effects 0.000 claims abstract description 87
- 239000011521 glass Substances 0.000 claims abstract description 65
- 230000003287 optical effect Effects 0.000 claims abstract description 27
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 8
- 230000006870 function Effects 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 10
- 239000011664 nicotinic acid Substances 0.000 abstract description 8
- 238000012545 processing Methods 0.000 abstract description 6
- 230000000946 synaptic effect Effects 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 210000004556 brain Anatomy 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000013528 artificial neural network Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000003592 biomimetic effect Effects 0.000 description 3
- 239000005304 optical glass Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003925 brain function Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 210000002241 neurite Anatomy 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
Based on a-SiOxSPR (surface plasmon resonance) nerve synapse device with memristive effect and a preparation method thereof belong to the technical field of bionic devices. The invention combines a K9 glass prism and a top electrode/a-SiOxMetal nanoparticle pairThe memristor structure coupling of the resistance layer/the bottom electrode enables optical signals under electrical modulation to be transmitted into the double resistance layer through the K9 glass prism, and enables dielectric constant change information of the resistance layer to be read by the optical signals in the working process of the device by applying the Surface Plasmon Resonance (SPR) effect, so that optical reading of the synaptic weight of the device is achieved. The electrical modulation and optical reading nerve synapse device provided by the invention has incomparable advantages compared with the traditional electrical modulation and electrical reading nerve synapse device, and has the characteristics of low energy consumption, non-volatility and the like of the traditional memristor, and also has the advantages of large signal processing bandwidth and strong anti-electromagnetic interference capability by taking light as an information carrier.
Description
Technical Field
The invention belongs to the technical field of bionic devices, and particularly relates to a-SiO-based bionic devicexSPR (surface plasmon resonance) nerve synapse device with memristive effect and a preparation method thereof.
Background
The traditional computer is based on a von neumann architecture, however, in the von neumann architecture, data calling and transmission between an information memory and a processor are connected through a bus, so that the efficiency of information processing is influenced by not only the operation rate and the storage rate of the processor, but also the information transmission capability of the bus, and a so-called von neumann bottleneck is formed. Although the amount of information processed by the human brain is not less than that of a computer, the efficiency is obviously higher and the energy consumption is smaller. Therefore, researchers build the idea of intelligent computers, and hopefully, the computers are enabled to learn the neural network to better simulate the functions of human brains, and the computers which are closer to the human brains are manufactured. Therefore, research and development of a neuro-bionic computer which has human-brain-like self-adaptive capacity and can process various information in parallel is always a research hotspot in the future computer field. Biophysical studies indicate that the completion of brain function is indistinguishable from the synapse, and the plasticity of the synapse is the basis for the brain to simultaneously complete information storage and processing. Therefore, biomimetic simulation of the neural synapses is an important step in artificial neural network research and is also the key to the research of neuromorphic computers and other intelligent terminals.
In the field of intelligent devices and neurosynaptic simulation research, a memristor draws attention of researchers through novel characteristics of the memristor, and the researchers find that according to a theoretical model of the memristor, the resistance value of the memristor can change along with the application of voltage and can remember the changed state, the unique nonlinear transmission characteristic of the memristor has high similarity with the behavior and principle of the neurosynaptic in a biological brain. The similarity enables the memristor to be very suitable for serving as a nerve synapse bionic device, and the memristor is used for constructing a nerve morphology chip and further used for an artificial neural network. In a conventional neuromorphic chip, transistors are the basic unit for constructing biomimetic synapses. However, the transistor-based bionic synapse device is not only bulky, high in energy consumption and poor in learning ability, but also has to reconstruct a circuit to form a new weight. In contrast, memristors are a superior biomimetic synapse device. The memristor is used as a bionic synapse device, so that the memristor is small in size, low in power consumption and high in cycle frequency, the working state (the resistance value after excitation) of the memristor is maintained without energy (namely, the memristor has self-sustaining property), and more importantly, the resistance value of the memristor has continuous adjustability. However, the memristor still has defects, and at present, in a neuromorphic chip constructed based on the memristor (namely, a resistive random access memory ReRAM) at home and abroad, electric signals are used as information media to write and read synaptic weights, namely, an 'electric modulation and electric reading' mode, and the main defects of the working mode are that the signal processing bandwidth is small, and crosstalk is easily generated in the electric signal transmission process.
Disclosure of Invention
In view of the foregoing, the present invention is directed to existing memristors-based resistorsThe problems of small signal processing bandwidth and easy occurrence of crosstalk in the signal transmission process during the operation of the bionic synapse, provides a method based on a-SiOxAn optical reading SPR (surface plasmon resonance) nerve synapse device with a memristive effect and a preparation method thereof. The invention makes the nerve synapse device use the optical signal as the information medium through the reasonable structure design, and reads the synapse weight by using the light intensity to represent the synapse weight, thereby breaking through the bandwidth limitation and the electromagnetic interference of the traditional nerve synapse device signal processing.
In order to achieve the purpose, the invention adopts the following technical scheme:
on the one hand, the invention provides a catalyst based on a-SiOxSPR nerve synapse device of memristive effect, characterized in that: comprises a memristor and a K9 glass prism arranged above the memristor, wherein the memristor is provided with a bottom electrode/a first a-SiO from bottom to topxResistive layer/second a-SiOxThe refractive index of the K9 glass prism is not less than that of the second a-SiOxThe refractive index of the resistance-change layer enables the optical signal under electrical modulation to be emitted to the 'first a-SiO' through a K9 glass prismxResistive layer/second a-SiOxIn the case of dual-resistance-change layer, the top electrode and the second a-SiOxPlasma resonance is generated at the interface between the resistance-change layers, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the optical signals is 400 nm-1100 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxA resistance change layer and a first a-SiOxThe change of the interface position between the resistive layers can realize the continuous change of the resistance value of the double resistive layers or the continuous change of the synapse weight, thereby realizing the functions of 'electrical modulation and optical reading' of the SPR nerve synapse device.
Further, a K9 glass substrate is arranged between the memristor and the K9 glass prism.
Furthermore, the top electrode is made of metal silver or gold, and the thickness of the top electrode is 30 nm-60 nm.
Furthermore, the bottom electrode in the invention is made of metal platinum or metal aluminum, and the thickness of the bottom electrode is 100 nm-500 nm. In a preferred embodiment, the bottom electrode is a circular electrode array, the diameter of the array unit is 5 μm to 300 μm, and the edge distance between adjacent array units is 5 μm to 20 μm.
Further, the first a-SiO in the present inventionxThe resistive layer may be pure a-SiOxThe (amorphous silicon oxide) thin film may be a-SiO containing metal nanoparticlesxA film; second a-SiO in the inventionxThe resistance change layer is a-SiO containing metal nano-particlesxA film, and the content of metal nanoparticles is higher than that of the first a-SiOxMetal nanoparticle content of the resistance change layer. The metal nanoparticles are selected from Ag, Cu or Al.
Preferably, the first a-SiOxThe volume percentage of the metal nano particles of the resistance change layer is not higher than 10 percent, and the second a-SiO isxThe volume percentage of the metal particles of the resistance change layer is 20-45%.
In a-SiOxThe metal-rich layer and the metal-deficient layer are prepared by the material and used for realizing the adjustability of the resistance of the device. Because the metal-rich layer has higher conductivity than the metal-poor layer, a uniform conductive front end interface exists between the two layers, and the conductive front end moves towards the metal-rich layer (or the metal-poor layer) along with the applied voltage, so that the proportion of the metal-rich layer (or the metal-poor layer) in the whole device becomes smaller, and the conductivity is increased (reduced).
Further, the first a-SiO in the present inventionxThe resistance change layer is intrinsic amorphous silicon oxide (a-SiO) prepared by sputteringx) Film or amorphous silicon oxide (a-SiO) containing Ag, Cu and Al metal nano-particles prepared by co-sputtering methodx) The film has a thickness of 30nm to 100 nm.
Further, the second a-SiO in the present inventionxThe resistance change layer is amorphous silicon oxide (a-SiO) containing one of Ag, Cu and Al metal nanoparticles prepared by a co-sputtering methodx) The film has a thickness of 10nm to 50 nm.
Furthermore, the optical signal is TM polarized light, and the wavelength range of the optical signal is 400 nm-1100 nm.
In another aspect, the present invention provides a composition based on the above a-SiOxThe preparation method of the SPR nerve synapse device with the memristive effect is characterized by comprising the following steps of:
step A: manufacturing of memristors:
a1: depositing a metal layer on the bottom surface of the K9 glass substrate to be used as a top electrode;
a2: forming a double-resistance-change layer window on the bottom surface of the top electrode, and then sequentially depositing on the bottom surface of the top electrode which is coated with glue and patterned to obtain a-SiOxFilm as the second a-SiOxA resistance change layer and a first a-SiOxA resistance change layer of the first a-SiOxThe resistance change layer is intrinsic a-SiOxThin film or a-SiO containing metal nanoparticlesxFilm of the second a-SiOxThe resistance change layer is a-SiO containing metal nano-particlesxA film having a metal nanoparticle content higher than that of the first a-SiOxThe resistance change layer is high, and redundant second a-SiO is stripped after deposition is finishedxResistive layer/first a-SiOxThe resistance-change layer is a double resistance-change layer;
a3: in the first a-SiOxForming a bottom electrode pattern on the bottom surface of the resistance change layer, and coating and patterning the first a-SiOxDepositing a metal layer on the resistance change layer, and stripping redundant metal layers after deposition is finished to obtain a first a-SiOxA bottom electrode on the bottom surface of the resistance change layer; thus, a memristor is prepared;
and B: manufacturing a neurosynaptic device:
and (4) bonding the K9 glass prism and the memristor obtained in the step A, so as to finish the preparation of the SPR nerve synapse device.
Furthermore, the memristor can be directly manufactured on the bottom surface of the K9 glass prism, namely, the bonding operation of the K9 glass substrate and the K9 glass prism is omitted, and the bottom electrode/the first a-SiO is directly manufactured on the bottom surface of the K9 glass prismxResistive layer/second a-SiOxThe resistance change layer/top electrode is vertical to the memristor with the four-layer structure.
Further, in the present invention, the bottom electrode, the first a-SiOxA resistance change layer and a second a-SiOxSinking of resistance change layerThe product is realized by combining a physical vapor deposition method with a photoetching process.
The basic principle of the invention is as follows: the K9 glass prism has good transmittance in the range of 400 nm-1100 nm, and the K9 glass prism has a larger refractive index than the double-resistance change layer, so that when the incident light with specific wavelength is from the incident surface of the K9 glass prism at an incident angle thetasWhen the incident light strikes the bottom of the K9 glass prism or the K9 glass substrate, the incident light generates evanescent waves on the surface of the top electrode below the K9 glass prism or the K9 glass substrate, and then the evanescent waves are generated on the top electrode/second-SiO glass substratexSurface Plasmon Resonance (SPR) is generated at the interface of the resistive layer so as to satisfy the incident angle thetasIs strongly absorbed and the strongly absorbed light signal is reflected from the exit face of the K9 glass prism and output with a minimum amplitude. The second a-SiO when a bias voltage is applied between the top and bottom electrodes of the device (electrical modulation)xA resistance change layer and a first a-SiOxThe interface of the resistive layer moves under the action of the electric field, so that the dielectric constant of the dual resistive layer between the top electrode and the bottom electrode is changed, and the Surface Plasmon Resonance (SPR) condition of the incident light and the top electrode is changed accordingly, if the light signal still has the same incident angle theta as the above-mentioned incident angle thetasWhen the light beam strikes the bottom of the K9 glass prism or the K9 glass substrate, due to the fact that the SPR condition of the incident light and the top electrode changes, namely the condition of 'extreme value' of the minimum light amplitude is destroyed, the plasma absorption effect is weakened, and the intensity of an output light signal detected on the exit surface of the K9 glass prism is enhanced; at this time, it is necessary to change the incident angle θ of the incident lightsSo that the incident light and the top electrode satisfy the SPR condition again, thereby making the optical signal output from the exit surface of the K9 glass prism after being reflected have the minimum amplitude, specifically, by changing the bias condition (electrical modulation) of the voltage applied between the top electrode and the bottom electrode, the second a-SiO is made to have a minimum amplitudexA resistance change layer and a first a-SiOxThe interface transition of the resistive layer is performed in a gradual and reversible manner (positive and negative voltage switching). For any of the second a-SiOxA resistance change layer and a first a-SiOxThe interface position between the resistive layers (which corresponds to the synaptic weight) satisfies the SPR conditionAngle of incidence theta of lightsIs always unique. Thus, during one cycle of electrical modulation, the second a-SiO is driven by the bias voltagexA resistance change layer and a first a-SiOxThe change of the interface position between the resistance change layers can realize the' first a-SiOxResistive layer/second a-SiOxThe resistance value of the double-resistance-change layer of the resistance-change layer or the synapse weight is continuously changed, so that the incident angle theta meeting the SPR conditionsWith the consequent change. Obviously, in the neurosynaptic device provided by the invention, the synaptic weight and the surface plasmon resonance incidence angle thetasThere is a one-to-one correspondence relationship based on which "electrical modulation, optical readout" of the memristive neurosynaptic device is achieved.
Compared with the prior art, the invention has the following beneficial effects:
the invention relates to a neurosynaptic device which combines a microelectronic element memristor and an optical prism, in particular to a large-refractive-index element, namely a K9 glass prism and a top electrode/a-SiOxThe metal nano-particle double-resistance variable layer/bottom electrode memristor structure is coupled, so that incident light is ensured to enter the double-resistance variable layer with the smaller refractive index along the material with the larger refractive index, grazing incidence is avoided, optical loss is reduced, and the dielectric constant change information of the resistance variable layer is read by optical signals in the working process of the device by using the Surface Plasmon Resonance (SPR) effect, so that the optical reading of the synaptic weights is realized. Because the optical signal has the characteristics of large bandwidth and strong anti-electromagnetic interference capability, the electrical modulation and optical reading neurosynaptic device provided by the invention has the advantages which are incomparable to the traditional electrical modulation and electrical reading neurosynaptic device, because the device has the characteristics of low energy consumption, non-volatility and the like of the traditional memristor, and also has the advantages of large signal processing bandwidth and strong anti-electromagnetic interference capability when the optical signal is used as an information carrier.
Drawings
Fig. 1 is a schematic side view of a device structure 1 of the present invention.
Fig. 2 is a schematic top view of a device structure 2 of the present invention.
Fig. 3 is a schematic top view of a device structure of the present invention.
The reference numerals in the drawings mean:
1 is a bottom electrode, 2 is a first a-SiOx resistance change layer, 3 is a second a-SiOx resistance change layer, 4 is a top electrode, 5 is a K9 glass substrate, and 6 is a K9 glass prism.
Detailed Description
The technical solutions of the present invention will be described in detail and fully with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can understand the principles and features of the present invention.
Example 1:
an SPR (surface plasmon resonance) nerve synapse device based on a-SiOx memristive effect is structurally shown in figure 1: the memristor comprises a memristor and a K9 glass prism 6 arranged above the memristor, wherein the K9 glass prism 6 is a triangular prism processed by K9 optical glass, and the memristor is provided with a bottom electrode 1/a first a-SiOx Resistive layer 2/second a-SiOxThe resistance change layer 3/top electrode 4' is vertical to the four-layer structure, in this embodiment the top electrode 4 is the metal silver Ag deposited on the bottom surface of the K9 glass prism 6, the second a-SiOxThe resistance change layer 3 is a-SiO containing Ag nano particlesxA film of Ag nanoparticles in a volume fraction of 40%, a first a-SiOxThe resistance change layer 2 is a-SiO containing Ag nano particlesxA film with Ag nanoparticles volume fraction of 5%, a bottom electrode 1 deposited on the first a-SiOxThe metal platinum Pt on the bottom surface of the resistance change layer 2; the refractive index of the K9 glass prism 6 is not less than that of the second a-SiOxThe refractive index of the resistance change layer 3 is such that the optical signal under electrical modulation is incident on the 'first a-SiO' via the K9 glass prism 6x Resistive layer 2/second a-SiOx3' double resistance change layer, at the top electrode 4 and the second a-SiOxPlasma resonance is generated at the interface between the resistance-change layers 3, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the optical signals is 400 nm-1100 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxA resistance change layer and a first a-SiOxThe change of the interface position between the resistance change layers can realize the continuous change of the resistance of the double resistance change layersContinuous change of chemosynthesis or synapse weight, and further realize the functions of electrical modulation and optical reading of the SPR nerve synapse device.
The above-mentioned a-SiO-based material is also provided belowxThe preparation method of the SPR nerve synapse device with the memristive effect comprises the following specific process flows:
the method comprises the following steps: preparing a K9 glass prism 6, the length and width of the bottom surface of which are both 15 mm;
step two: cleaning and drying the K9 glass prism 6;
step three: forming a metal silver film with the thickness of 60nm on the bottom surface of a K9 glass prism 6 by adopting a physical vapor deposition method to be used as a top electrode 4;
step four: spin-coating a layer of photoresist on the surface of the top electrode 4, and forming a double-resistance-change-layer window which is positioned in the center of the bottom surface of the prism and has the length and width of 10mm multiplied by 10mm by utilizing a mask through the steps of photoetching, developing and the like; a second a-SiO with the thickness of 50nm and containing 40 percent of metal silver nano particles is sequentially deposited on the glued and patterned top electrode 4 by adopting a co-sputtering methodxA resistance change layer 3 and a first a-SiO containing 5% metallic silver nanoparticlesxA resistance change layer 2; stripping off the first a-SiO 10mm above the top electrode 4x Resistive layer 2/second a-SiOxThe resistance-change layer 3' is double resistance-change layers, and a top electrode lead-out window with the width of 2.5mm is obtained;
step five: in the first a-SiOxSpin-coating a layer of photoresist on the surface of the resistance change layer 2, and forming a first a-SiO layer by using a mask through photoetching, developing and other stepsxA bottom electrode pattern on the bottom surface of the resistance change layer 2, in the present embodiment, an electrode array pattern as shown in fig. 3 is adopted; then adopting a co-sputtering method to coat the first a-SiO which is coated and patternedxDepositing platinum Pt on the resistance changing layer 2; stripping redundant metal platinum Pt by using a stripping process to prepare a bottom electrode 1; thus completing the preparation of the device;
step 6: and finally, electrodes are respectively led out from the top electrode 4 and the bottom electrode 1, so that the function test of the nerve synapse device is convenient to realize.
Example 2:
based on a-SiOxSPR neurite with memristive effectThe contact device is structurally shown in FIG. 2: the memory resistor comprises a K9 glass substrate 5, a memory resistor carried by the glass substrate 5 and a K9 glass prism 6 arranged above the K9 glass substrate 5, wherein the K9 glass prism 6 is a prism processed by K9 optical glass, the K9 glass substrate 5 is also processed by K9 optical glass, and the K9 glass substrate 5 and the K9 glass prism 6 are preferably bonded by adopting index matching fluid; the memristor is provided with a bottom electrode 1/first a-SiO from bottom to topxResistive layer 2/second a-SiOxThe resistance change layer 3/top electrode 4' is vertical to the four-layer structure, in this embodiment the top electrode 4 is the metal silver Ag deposited on the bottom surface of the K9 glass prism 6, the second a-SiOxThe resistance change layer 3 is a-SiO containing Ag nano particlesxA film of Ag nanoparticles in a volume fraction of 40%, a first a-SiOxThe resistance change layer 2 is a-SiO containing Ag nano particlesxA film with Ag nanoparticles volume fraction of 5%, a bottom electrode 1 deposited on the first a-SiOxThe metal aluminum Al on the bottom surface of the resistance change layer 2; the refractive index of the K9 glass prism 6 is not less than that of the second a-SiOxThe refractive index of the resistive layer 3 is such that under electrical modulation, i.e. adjustment of the voltage applied between the top electrode 4 and the bottom electrode 1, an optical signal is injected via the K9 glass prism into the "first a-SiOxResistive layer 2 and second a-SiOxIn the case of a dual-resistance layer of the resistance change layer 3', at the top electrode 4 and the second a-SiOxPlasma resonance is generated at the interface between the resistance-change layers 3, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the optical signals is 400 nm-1100 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxA resistance change layer and a first a-SiOxThe change of the interface position between the resistive layers can realize the continuous change of the resistance value of the double resistive layers or the continuous change of the synapse weight, thereby realizing the functions of 'electrical modulation and optical reading' of the SPR nerve synapse device.
The above-mentioned a-SiO-based material is also provided belowxThe preparation method of the SPR nerve synapse device with the memristive effect comprises the following specific process flows:
the method comprises the following steps: preparing a K9 glass prism 6 and a K9 glass substrate 5 made of the same material, wherein the length and the width of the bottom surface of the K9 glass prism 6 are both 15mm, the length and the width of the K9 glass substrate 5 are both 15mm, and the thickness is 1.1 mm;
step two: cleaning and drying the K9 glass prism 6 and the K9 glass substrate 5;
step three: forming a metal silver film with the thickness of 60nm on the bottom surface of a K9 glass substrate 5 by adopting a physical vapor deposition method to be used as a top electrode 4;
step four: spin-coating a layer of photoresist on the surface of the top electrode 4, and forming a double-resistance-change-layer window which is positioned in the center of the bottom surface of the prism and has the length and width of 10mm multiplied by 10mm by utilizing a mask through the steps of photoetching, developing and the like; a second a-SiO with the thickness of 50nm and containing 40 percent of metal silver nano particles is sequentially deposited on the glued and patterned top electrode 4 by adopting a co-sputtering methodxA resistance change layer 3 and a first a-SiO containing 5% metallic silver nanoparticlesxA resistance change layer 2; stripping off the first a-SiO 10mm above the top electrode 4x Resistive layer 2/second a-SiOxThe resistance-change layer 3' is double resistance-change layers, and a top electrode lead-out window with the width of 2.5mm is obtained;
step five: in the first a-SiOxSpin-coating a layer of photoresist on the surface of the resistance change layer 2, and forming a first a-SiO layer by using a mask through photoetching, developing and other stepsxA bottom electrode pattern on the bottom surface of the resistance change layer 2, in the present embodiment, an electrode array pattern as shown in fig. 3 is adopted; then adopting magnetron sputtering method to coat the first a-SiO which is coated with glue and patternedxDepositing metal aluminum Al on the resistance changing layer 2; stripping excessive metal aluminum Al by using a stripping process to prepare a bottom electrode 1;
step 6: the bottom surface of the K9 glass prism 6 is coupled with one surface of the K9 glass substrate 5, on which the memristor is not deposited, by using an index matching fluid, so that the preparation of the device is completed;
and 7: and finally, electrodes are respectively led out from the top electrode 4 and the bottom electrode 1, so that the function test of the nerve synapse device is convenient to realize.
While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. Based on a-SiOxSPR nerve synapse device of memristive effect, characterized in that: comprises a memristor and a K9 glass prism arranged above the memristor, wherein the memristor is provided with a bottom electrode/a first a-SiO from bottom to topxResistive layer/second a-SiOxThe refractive index of the K9 glass prism is not less than that of the second a-SiOxThe refractive index of the resistance-change layer is such that the near-infrared light under electrical modulation is emitted to the 'first a-SiO' via the K9 glass prismxResistive layer/second a-SiOxIn the case of dual-resistance-change layer, the top electrode and the second a-SiOxPlasma resonance is generated at the interface between the resistance change layers, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the near infrared light is 400 nm-1100 nm;
when electrical modulation is applied between the top and bottom electrodes of the device, the second a-SiO is driven by a bias voltage during one cycle of the electrical modulationxA resistance change layer and a first a-SiOxThe change of the interface position between the resistive layers can realize the continuous change of the resistance value of the double resistive layers or the continuous change of the synapse weight, thereby realizing the functions of 'electrical modulation and optical reading' of the SPR nerve synapse device.
2. a-SiO-based material according to claim 1xSPR nerve synapse device of memristive effect, characterized in that: and a K9 glass substrate is arranged between the memristor and the K9 glass prism.
3. a-SiO-based material according to claim 1xSPR nerve synapse device of memristive effect, characterized in that: the top electrode is made of metal silver or gold, and the thickness of the top electrode is 30-60 nm; the bottom electrode is made of metal platinum or metal aluminum, and the thickness of the bottom electrode is 100 nm-500 nm.
4. a-SiO-based material according to claim 1xSPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxThe resistance change layer is pure a-SiOxThin film or a-SiO containing metal nano-particlesxA film; the second a-SiOxThe resistance change layer is a-SiO containing metal nano-particlesxA film; the metal nanoparticles are selected from Ag, Cu or Al.
5. a-SiO-based material according to claim 1xSPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxThe resistance change layer is a-SiO containing metal nano-particlesxA film; the second a-SiOxThe resistance change layer is a-SiO containing metal nano-particlesxA thin film, and the second a-SiOxThe content of metal nano particles in the resistance change layer is higher than that of the first a-SiOxThe content of metal nanoparticles in the resistance change layer; the metal nanoparticles are selected from Ag, Cu or Al.
6. a-SiO-based material according to claim 1xSPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxThe volume percentage of the metal nanoparticles in the resistance change layer is not higher than 10%; the second a-SiOxThe volume percentage of the metal particles of the resistance change layer is 20-45%.
7. a-SiO-based material according to claim 1xSPR nerve synapse device of memristive effect, characterized in that: the near infrared light is TM polarized light.
8. a-SiO-based material according to claim 1xSPR nerve synapse device of memristive effect, characterized in that: the first a-SiOxThe thickness of the resistance change layer is 30 nm-100 nm; the second a-SiOxThe thickness of the resistance change layer is 10 nm-50 nm.
9. Based on a-SiOxThe preparation method of the SPR nerve synapse device with the memristive effect is characterized by comprising the following steps of:
step A: manufacturing of memristors:
a1: depositing a metal layer on the bottom surface of the K9 glass substrate to be used as a top electrode;
a2: forming a double-resistance-change layer window on the bottom surface of the top electrode, and then sequentially and twice depositing a-SiO on the bottom surface of the top electrode which is coated with glue and patternedxThe film is used as the second a-SiO in turnxA resistance change layer and a first a-SiOxA resistance change layer of the first a-SiOxThe resistance change layer is intrinsic a-SiOxThin film or a-SiO containing metal nanoparticlesxFilm of the second a-SiOxThe resistance change layer is a-SiO containing metal nano-particlesxA film having a metal nanoparticle content higher than that of the first a-SiOxThe resistance change layer is high, and redundant second a-SiO is stripped after deposition is finishedxResistive layer/first a-SiOxThe resistance-change layer is a double resistance-change layer;
a3: in the first a-SiOxForming a bottom electrode pattern on the bottom surface of the resistance change layer, and coating and patterning the first a-SiOxDepositing a metal layer on the resistance change layer, and stripping redundant metal layers after deposition is finished to obtain a first a-SiOxA bottom electrode on the bottom surface of the resistance change layer; thus, a memristor is prepared;
and B: manufacturing a neurosynaptic device:
and (4) bonding the K9 glass prism and the memristor obtained in the step A, so as to finish the preparation of the SPR nerve synapse device.
10. a-SiO based on claim 9xThe preparation method of the SPR nerve synapse device with the memristive effect is characterized by comprising the following steps: the memristor is directly manufactured on the bottom surface of a K9 glass prism.
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