CN111192957A - Volatile and non-volatile coexisting memristor device, preparation method and alternative preparation method - Google Patents
Volatile and non-volatile coexisting memristor device, preparation method and alternative preparation method Download PDFInfo
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Abstract
The invention provides a volatile and nonvolatile coexisting memristor device, a preparation method and an alternative preparation method, the memristor is arranged on the substrate, the memristor is sequentially provided with a protective layer, an upper conductive electrode, a middle functional layer and a lower conductive electrode from top to bottom, the shapes and the sizes of the protective layer and the upper conductive electrode are matched one by one, the shapes and the sizes of the middle functional layer and the lower conductive electrode are matched one by one, the middle functional layer comprises a dielectric layer and an MXene material film laid above the dielectric layer, the upper conductive electrode is sputtered on the top of the MXene material film through the opening of the mask plate, the top and the bottom of the lower conductive electrode are respectively contacted with the middle functional layer and the substrate, and the upper conductive electrode has the basic function of simulating biological synapse, the method has important significance for realizing a low-power-consumption system, and the preparation method is simple and efficient, and has low material cost and low power consumption.
Description
Technical Field
The invention relates to the technical field of brain-like devices, in particular to a volatile and non-volatile coexisting memristor device, a preparation method and an alternative preparation method.
Background
The human brain has incomparable advantages compared with the prior computer system in terms of processing complex problems such as large-scale data and picture recognition by the characteristics of a parallel processing mode, low power consumption and the like.
The memristor is a novel two-port nonlinear passive electronic device aiming at breaking through the limit of a von Neumann architecture with computational separation. The memristor is a nanoscale device with the resistance value changing along with the change of the passing current quantity, the working mechanism of the memristor naturally simulates biological nerve synapse, a storage and calculation integrated mode from a device level to a system level can be realized, namely storage and calculation are simultaneously carried out, the speed of processing complex problems by a computer can be greatly improved, a low-power-consumption system is realized, and the memristor is the optimal choice for synapse simulation.
Volatile and nonvolatile are two important behaviors in a resistive switching device, and a nonvolatile device can maintain an internal resistance state as a memory cell according to a history operation. Volatile devices, however, tend to revert to a previous state in a short time after the external stimulus is removed, and have previously typically tended to be used as selectors. Meanwhile, as electronic synapses, the implementation of STP and LTP is based on volatile and non-volatile switching characteristics. Therefore, the coexistence of volatility and non-volatility can be realized in one device, which not only helps to improve the flexibility of the application of the resistive device, but also is a necessary requirement for realizing electronic synapse.
However, device power consumption remains an obstacle that limits the application of electronic synapses to large-scale brain-like computing systems. Although the resistive switching device has a larger power consumption advantage compared with the conventional CMOS device, the device which works at the nano-ampere level current and the low working voltage has an important significance for realizing a low-power-consumption system.
MXene (transition metal carbide), a novel two-dimensional material. The material is prepared from Ti3AlC2The graphene is obtained by etching Al through hydrofluoric acid, has the properties of a layered structure, excellent conductivity and the like, and is similar to graphene, and has the effect of reducing the power consumption of devicesThe material has important significance, and the material is less applied to the aspect of electronic devices at present.
Disclosure of Invention
The invention aims to provide a volatile and non-volatile coexisting memristor device, a preparation method and an alternative preparation method, and a novel two-dimensional material MXene is introduced into a traditional MIM structure. The device shows volatile behavior under small current limit, and is suitable for various application scenes; and exhibits non-volatile behavior at large current limits, has good data retention capability and exhibits quantum properties of the multi-resistive state at 500 mua current limits. The device has the basic function of simulating biological synapses and has important significance for realizing a low-power-consumption system; in addition, the preparation method is simple and efficient, low in material cost and low in power consumption.
The invention provides a volatile and non-volatile coexisting memristor, wherein the memristor is arranged on a substrate, the memristor is sequentially provided with a protective layer, an upper conductive electrode, a middle functional layer and a lower conductive electrode from top to bottom, the shapes and the sizes of the protective layer and the upper conductive electrode are matched one by one, the shapes and the sizes of the middle functional layer and the lower conductive electrode are matched one by one, the middle functional layer comprises a dielectric layer and an MXene material film laid above the dielectric layer, the upper conductive electrode is sputtered on the top of the MXene material film through an opening of a mask plate, and the top and the bottom of the lower conductive electrode are respectively contacted with the middle functional layer and the substrate.
The further improvement lies in that: the dielectric layer is a silicon dioxide layer, and the thickness of the dielectric layer is 80 nm.
The further improvement lies in that: the protective layer is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, and the thickness of the protective layer is 80 nm.
The further improvement lies in that: the upper conductive electrode is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, which is different from the protective layer 1, and the thickness of the upper conductive electrode is 100 nm.
The further improvement lies in that: the lower conductive electrode is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, and the thickness of the lower conductive electrode is 90 nm.
The further improvement lies in that: the substrate is made of a silicon substrate layer.
The invention also provides a preparation method of the volatile and nonvolatile coexisting memristor device, which comprises the following steps:
the method comprises the following steps: fixing a cleaned substrate subjected to ultraviolet irradiation enhanced bonding on a target gun of a sputtering system in a vacuum environment, mounting a first mask above the substrate, selecting a lower conductive electrode material as a sputtering source, depositing a lower conductive electrode through a magnetron sputtering instrument, uniformly covering the upper surface of the substrate with the lower conductive electrode, and mounting a second mask above the lower conductive electrode due to the adoption of a cross bar array structure;
step two: maintaining the vacuum environment of the first step, replacing a dielectric layer sputtering source, uniformly sputtering a dielectric layer on the upper surface of the lower conductive electrode, and then placing a third mask plate above the dielectric layer;
step three: mixing Mxene and deionized water according to the mass ratio of 1:200, and stirring for 5-15 min by ultrasonic dispersion to obtain Mxene suspension;
step four: sucking the supernatant of the Mxene suspension in the third step, dripping the supernatant on the medium layer in the second step, and spin-coating for 60s by a spin coater to uniformly cover an Mxene material film on the upper surface of the medium layer to obtain an intermediate functional layer;
step five: mounting a fourth mask plate on the middle functional layer prepared in the fourth step, fixing the middle functional layer with the mask plate mounted on a target gun of a sputtering system in a vacuum environment, selecting a sputtering source made of an upper conductive electrode material, and performing sputtering deposition to obtain an upper conductive electrode;
step six: and D, maintaining the vacuum environment in the step five, replacing a protective layer sputtering source, and uniformly sputtering a protective layer on the upper surface of the upper conductive electrode, thereby preparing the volatile and nonvolatile coexisting memristor.
The further improvement lies in that: the rotating speed of the glue spinning machine in the fourth step is 500 r/min.
The invention also provides an alternative preparation method of the volatile and nonvolatile coexisting memristor device, which comprises the following steps:
the method comprises the following steps: fixing a silicon substrate on a target gun of a sputtering system in a vacuum environment, mounting a first mask plate on the target gun, selecting platinum as a sputtering source, depositing by a magnetron sputtering instrument to obtain a platinum electrode with the thickness of 90nm, uniformly covering the platinum electrode on the upper surface of the silicon substrate, and mounting a second mask plate above the platinum electrode;
step two: maintaining the vacuum environment of the first step, replacing a silicon dioxide sputtering source, uniformly sputtering a silicon dioxide medium layer with the thickness of 80nm on the upper surface of the platinum electrode, and then placing a third mask plate above the medium layer;
step three: mixing Mxene and deionized water according to the mass ratio of 1:200, and stirring for 10min by ultrasonic dispersion to obtain Mxene suspension;
step four: sucking the supernatant of the Mxene suspension in the third step, dripping the supernatant on the silicon dioxide medium layer, spin-coating for 60s by a spin coater at the rotating speed of 500r/min to uniformly cover an Mxene material film on the upper surface of the silicon dioxide medium layer, thereby preparing an intermediate functional layer;
step five: mounting a fourth mask plate on the middle functional layer prepared in the fourth step, fixing the middle functional layer with the mask plate mounted on a target gun of a sputtering system in a vacuum environment, selecting silver as a sputtering source, and performing sputtering deposition to obtain a silver electrode with the thickness of 100 nm;
step six: and D, maintaining the vacuum environment in the step five, replacing a titanium nitride sputtering source, and uniformly sputtering an 80nm titanium nitride protective layer on the upper surface of the upper conductive electrode, thereby preparing the volatile and nonvolatile coexisting memristor.
The invention has the beneficial effects that: an MXene film is sputtered on the oxide dielectric layer to form an intermediate functional layer, and the MXene film covers the upper surface of the silicon dioxide layer, so that the formation of the conductive filament is enhanced, and the memristor device obtains better conductivity and stability. The test shows that the method has the following basic characteristics: volatile behavior is exhibited at small current limits and non-volatile behavior is exhibited at large current limits. The device has the basic function of simulating biological synapses and has important significance for realizing a low-power-consumption system; in addition, the preparation method is simple and efficient, low in material cost and low in power consumption.
Drawings
Fig. 1 is a schematic structural diagram of a memristive device of the present disclosure.
Fig. 2 is a scanning image of the transition metal carbide MXene of the present invention under an electron microscope.
Fig. 3 is an array diagram of a memristive device of the present invention under a mirror microscope.
Fig. 4 is an I-V plot at 1nA current limit for the memristive device of the present invention.
FIG. 5 is an I-V plot at 100nA current limit for the memristive device of the present invention.
FIG. 6 is an I-V plot at 500nA current limit for a memristive device of the present invention.
FIG. 7 is an I-V plot at 1mA current limit for a memristive device of the present invention.
Detailed Description
For the purpose of enhancing understanding of the present invention, the present invention will be further described in detail with reference to the following examples, which are provided for illustration only and are not to be construed as limiting the scope of the present invention.
As shown in fig. 1 to 7, the present embodiment provides a volatile and non-volatile coexisting memristive device, the memristive device is disposed on a substrate 6, the memristive device sequentially includes a protective layer 1, an upper conductive electrode 2, a middle functional layer 3, and a lower conductive electrode 5 from top to bottom, shapes and sizes of the protective layer 1 and the upper conductive electrode 2 are matched one by one, shapes and sizes of the middle functional layer 3 and the lower conductive electrode 5 are matched one by one, the middle functional layer 3 includes a dielectric layer 4 and an MXene material film laid on the dielectric layer 4, the upper conductive electrode 2 is sputtered on top of the MXene material film through an opening of a mask plate, and top and bottom of the lower conductive electrode 5 are respectively in contact with the middle functional layer 3 and the substrate 6. The upper conductive electrode 2 and the lower conductive electrode 5 are each made by a Physical Vapor Deposition (PVD) method. And the upper conductive electrode 2 is an anode and the lower conductive electrode 5 is a cathode.
The dielectric layer 4 is a silicon dioxide layer, and the thickness of the dielectric layer 4 is 80 nm.
The material of the protective layer 1 is one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, and the thickness of the protective layer 1 is 80 nm.
The upper conductive electrode 2 is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, which is different from the protective layer 1, and the thickness of the upper conductive electrode 2 is 100 nm.
The lower conductive electrode 5 is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, and the thickness of the lower conductive electrode 5 is 90 nm.
The substrate 6 is made of a silicon substrate layer.
The middle functional layer 3 and the dielectric layer 4 are used for realizing conversion between high and low resistance states, the middle functional layer 3 comprises the dielectric layer 4 and an MXene material film uniformly and completely covering the dielectric layer 4, the dielectric layer is a silicon dioxide layer, the thickness of the dielectric layer is 80nm, and the silicon dioxide layer is also prepared by a PVD method.
The embodiment also provides a preparation method of a volatile and nonvolatile coexisting memristor device, which comprises the following steps:
the method comprises the following steps: fixing a cleaned substrate subjected to ultraviolet irradiation enhanced bonding on a target gun of a sputtering system in a vacuum environment, mounting a first mask above the substrate, selecting a lower conductive electrode material as a sputtering source, depositing a lower conductive electrode through a magnetron sputtering instrument, uniformly covering the upper surface of the substrate with the lower conductive electrode, and mounting a second mask above the lower conductive electrode due to the adoption of a cross bar array structure;
step two: maintaining the vacuum environment of the first step, replacing a dielectric layer sputtering source, uniformly sputtering a dielectric layer on the upper surface of the lower conductive electrode, and then placing a third mask plate above the dielectric layer;
step three: mixing Mxene and deionized water according to the mass ratio of 1:200, and stirring for 5-15 min by ultrasonic dispersion to obtain Mxene suspension;
step four: sucking the supernatant of the Mxene suspension in the third step, dripping the supernatant on the medium layer in the second step, and spin-coating for 60s by a spin coater to uniformly cover an Mxene material film on the upper surface of the medium layer to obtain an intermediate functional layer;
step five: mounting a fourth mask plate on the middle functional layer prepared in the fourth step, fixing the middle functional layer with the mask plate mounted on a target gun of a sputtering system in a vacuum environment, selecting a sputtering source made of an upper conductive electrode material, and performing sputtering deposition to obtain an upper conductive electrode;
step six: and D, maintaining the vacuum environment in the step five, replacing a protective layer sputtering source, and uniformly sputtering a protective layer on the upper surface of the upper conductive electrode, thereby preparing the volatile and nonvolatile coexisting memristor.
The rotating speed of the glue spinning machine in the fourth step is 500 r/min.
The embodiment also provides an alternative preparation method of a volatile and nonvolatile coexisting memristor device, and the alternative preparation method comprises the following steps of:
the method comprises the following steps: fixing a silicon substrate on a target gun of a sputtering system in a vacuum environment, mounting a first mask plate on the target gun, selecting platinum as a sputtering source, depositing by a magnetron sputtering instrument to obtain a platinum electrode with the thickness of 90nm, uniformly covering the platinum electrode on the upper surface of the silicon substrate, and mounting a second mask plate above the platinum electrode;
step two: maintaining the vacuum environment of the first step, replacing a silicon dioxide sputtering source, uniformly sputtering a silicon dioxide medium layer with the thickness of 80nm on the upper surface of the platinum electrode, and then placing a third mask plate above the medium layer;
step three: mixing Mxene and deionized water according to the mass ratio of 1:200, and stirring for 10min by ultrasonic dispersion to obtain Mxene suspension;
step four: sucking the supernatant of the Mxene suspension in the third step, dripping the supernatant on the silicon dioxide medium layer, spin-coating for 60s by a spin coater at the rotating speed of 500r/min to uniformly cover an Mxene material film on the upper surface of the silicon dioxide medium layer, thereby preparing an intermediate functional layer;
step five: mounting a fourth mask plate on the middle functional layer prepared in the fourth step, fixing the middle functional layer with the mask plate mounted on a target gun of a sputtering system in a vacuum environment, selecting silver as a sputtering source, and performing sputtering deposition to obtain a silver electrode with the thickness of 100 nm;
step six: and D, maintaining the vacuum environment in the step five, replacing a titanium nitride sputtering source, and uniformly sputtering an 80nm titanium nitride protective layer on the upper surface of the upper conductive electrode, thereby preparing the volatile and nonvolatile coexisting memristor.
Fig. 3 is an array diagram of a memristive device of the present embodiment under a metallographic microscope. In fig. 3, the part circled red at the node of the cross array is a single memristor, and it can be seen that the cross array structure of the memristor device in the present embodiment is obvious, and has the potential of realizing a high-density storage circuit.
FIG. 4 is an I-V plot at a current limit of 1nA for the memristive device of the present embodiments, showing that the memristive device is capable of operating at a current limit of 1nA, and exhibits volatility at small compliance currents. Similar volatile behavior is also exhibited by increasing the compliance current to 100 nA.
Fig. 5 is an I-V plot at a current limit of 100nA for the present memristive device, showing that the memristive device exhibits volatility at small compliance currents. In the test process, the bottom electrode is kept in a grounding state, the top electrode is connected with a stimulation signal of bidirectional scanning, the initial resistance is very large, and the top electrode is in a turn-off state and is called as HRS. When the applied scan voltage reaches about 0.16V, the current suddenly increases sharply, the device turns on, and the LRS transitions. However, the LRS has instability during the process of decreasing the scan voltage, and when the scan voltage is lower than 0.04V, the resistance of the device begins to increase and completely returns to HRS at about 0.02V.
Fig. 6 is an I-V plot at 500uA current limit for the memristive device of this example, showing that the device exhibits non-volatility at large current limits. Under this current limit, Vset and Vreset are also equal to about 0.2V, which also has better uniformity.
FIG. 7 is an I-V plot at 1mA current limit for the memristive device of the present embodiments, indicating that the memristor has a bipolar non-volatile similar to a 500uA current limit. As shown by the red curve in fig. 7, the device exhibits bipolar non-volatility at a current limit of 1 mA. Applying a forward scan voltage to the device, it can be seen that the scan is to around 0.2V (Vset), the current rapidly increases to 1mA current limit, the device transitions to an on state, and the low resistance state LRS can be maintained. To restore the device to a high-resistance state, a negative scan voltage is applied to the device, and the device begins to increase in resistance around-0.2 v (vreset) until it returns to a high-resistance state. The gray curve in the figure is a 100 continuous I-V cycle curve of the device at a current limit of 1mA, and the device shows high repeatability. In addition, the absolute values of Vset and Vreset of the device are both around 0.2V, which is lower than other low power devices.
In summary, according to the memristor device with both volatile and nonvolatile components and the preparation method thereof provided by the embodiment, the intermediate functional layer is formed by sputtering and plating an MXene film on the oxide dielectric layer, and the MXene film covers the upper surface of the silicon dioxide layer, so that the formation of the conductive filament is enhanced, and the memristor device obtains better conductivity and stability. Tests show that the novel structure memristor has the following basic characteristics: volatile behavior is exhibited at small current limits and non-volatile behavior is exhibited at large current limits. The device has the basic function of simulating biological synapses and has important significance for realizing a low-power-consumption system; in addition, the memristor manufacturing method provided by the embodiment is simple and efficient, low in material cost and low in power consumption.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, the word "comprising" does not exclude the presence of data or steps not listed in a claim.
Claims (9)
1. A memristive device coexisting volatile and non-volatile, the memristive device disposed on a substrate (6), characterized in that: the memristor is provided with a protective layer (1), an upper conductive electrode (2), a middle functional layer (3) and a lower conductive electrode (5) from top to bottom in sequence, the shapes and the sizes of the protective layer (1) and the upper conductive electrode (2) are matched one by one, the shapes and the sizes of the middle functional layer (3) and the lower conductive electrode (4) are matched one by one, the middle functional layer (3) comprises a dielectric layer (4) and an MXene material film laid above the dielectric layer (4), the upper conductive electrode (2) is sputtered on the top of the MXene material film through an opening of a mask plate, and the top and the bottom of the lower conductive electrode (5) are respectively contacted with the middle functional layer (3) and a substrate (6).
2. A volatile and non-volatile coexisting memristive device according to claim 1, wherein: the dielectric layer (4) is a silicon dioxide layer, and the thickness of the dielectric layer (4) is 80 nm.
3. A volatile and non-volatile coexisting memristive device according to claim 1, wherein: the protective layer (1) is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, and the thickness of the protective layer (1) is 80 nm.
4. A volatile and non-volatile coexisting memristive device according to claim 1, wherein: the upper conductive electrode (2) is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, which is different from the protective layer (1), and the thickness of the upper conductive electrode (2) is 100 nm.
5. A volatile and non-volatile coexisting memristive device according to claim 1, wherein: the lower conductive electrode (5) is made of one of aluminum, molybdenum, niobium, copper, gold, palladium, platinum, tantalum, ruthenium oxide, silver, tantalum nitride, titanium nitride, tungsten and tungsten nitride, and the thickness of the lower conductive electrode (5) is 90 nm.
6. A volatile and non-volatile coexisting memristive device according to claim 1, wherein: the substrate (6) is made of a silicon substrate layer.
7. A method of fabricating a volatile and non-volatile coexisting memristive device as defined in any one of claims 1-6, wherein: the method comprises the following steps:
the method comprises the following steps: fixing a cleaned substrate subjected to ultraviolet irradiation enhanced bonding on a target gun of a sputtering system in a vacuum environment, mounting a first mask above the substrate, selecting a lower conductive electrode material as a sputtering source, depositing a lower conductive electrode through a magnetron sputtering instrument, uniformly covering the upper surface of the substrate with the lower conductive electrode, and mounting a second mask above the lower conductive electrode due to the adoption of a cross bar array structure;
step two: maintaining the vacuum environment of the first step, replacing a dielectric layer sputtering source, uniformly sputtering a dielectric layer on the upper surface of the lower conductive electrode, and then placing a third mask plate above the dielectric layer;
step three: mixing Mxene and deionized water according to the mass ratio of 1:200, and stirring for 5-15 min by ultrasonic dispersion to obtain Mxene suspension;
step four: sucking the supernatant of the Mxene suspension in the third step, dripping the supernatant on the medium layer in the second step, and spin-coating for 60s by a spin coater to uniformly cover an Mxene material film on the upper surface of the medium layer to obtain an intermediate functional layer;
step five: mounting a fourth mask plate on the middle functional layer prepared in the fourth step, fixing the middle functional layer with the mask plate mounted on a target gun of a sputtering system in a vacuum environment, selecting a sputtering source made of an upper conductive electrode material, and performing sputtering deposition to obtain an upper conductive electrode;
step six: and D, maintaining the vacuum environment in the step five, replacing a protective layer sputtering source, and uniformly sputtering a protective layer on the upper surface of the upper conductive electrode, thereby preparing the volatile and nonvolatile coexisting memristor.
8. The method of claim 7, wherein the method comprises: the rotating speed of the glue spinning machine in the fourth step is 500 r/min.
9. An alternative method of fabricating the volatile and non-volatile coexisting memristive device of any one of claims 1-6, wherein: the alternative method comprises the steps of:
the method comprises the following steps: fixing a silicon substrate on a target gun of a sputtering system in a vacuum environment, mounting a first mask plate on the target gun, selecting platinum as a sputtering source, depositing by a magnetron sputtering instrument to obtain a platinum electrode with the thickness of 90nm, uniformly covering the platinum electrode on the upper surface of the silicon substrate, and mounting a second mask plate above the platinum electrode;
step two: maintaining the vacuum environment of the first step, replacing a silicon dioxide sputtering source, uniformly sputtering a silicon dioxide medium layer with the thickness of 80nm on the upper surface of the platinum electrode, and then placing a third mask plate above the medium layer;
step three: mixing Mxene and deionized water according to the mass ratio of 1:200, and stirring for 10min by ultrasonic dispersion to obtain Mxene suspension;
step four: sucking the supernatant of the Mxene suspension in the third step, dripping the supernatant on the silicon dioxide medium layer, spin-coating for 60s by a spin coater at the rotating speed of 500r/min to uniformly cover an Mxene material film on the upper surface of the silicon dioxide medium layer, thereby preparing an intermediate functional layer;
step five: mounting a fourth mask plate on the middle functional layer prepared in the fourth step, fixing the middle functional layer with the mask plate mounted on a target gun of a sputtering system in a vacuum environment, selecting silver as a sputtering source, and performing sputtering deposition to obtain a silver electrode with the thickness of 100 nm;
step six: and D, maintaining the vacuum environment in the step five, replacing a titanium nitride sputtering source, and uniformly sputtering an 80nm titanium nitride protective layer on the upper surface of the upper conductive electrode, thereby preparing the volatile and nonvolatile coexisting memristor.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112382721A (en) * | 2020-10-13 | 2021-02-19 | 深圳大学 | Conductive filament type memristor, preparation method and storage mode regulation and control method |
| CN113206192A (en) * | 2021-04-21 | 2021-08-03 | 南京邮电大学 | Ferroelectric memristor based on MXene/barium ferrite, array and preparation method of ferroelectric memristor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112382721A (en) * | 2020-10-13 | 2021-02-19 | 深圳大学 | Conductive filament type memristor, preparation method and storage mode regulation and control method |
| CN113206192A (en) * | 2021-04-21 | 2021-08-03 | 南京邮电大学 | Ferroelectric memristor based on MXene/barium ferrite, array and preparation method of ferroelectric memristor |
| CN113206192B (en) * | 2021-04-21 | 2022-07-26 | 南京邮电大学 | Ferroelectric memristor based on MXene/barium ferrite, array and preparation method of ferroelectric memristor |
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