CN110400873A - Memristor cynapse device and method based on the bis- change resistance layers of SiOx:Ag/TiOx - Google Patents
Memristor cynapse device and method based on the bis- change resistance layers of SiOx:Ag/TiOx Download PDFInfo
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- 230000008859 change Effects 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 28
- 229910003087 TiOx Inorganic materials 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 title claims description 5
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 8
- 238000005406 washing Methods 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 210000002569 neuron Anatomy 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- -1 oxonium ion Chemical class 0.000 description 2
- 210000000225 synapse Anatomy 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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Abstract
The present invention provides a kind of based on SiOx:Ag/TiOxThe memristor cynapse device and preparation method of double change resistance layers, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；The second change resistance layer of the memristor cynapse device is inserted between the first change resistance layer and lower electrode as metal ion barrier layer；The preparation method of the memristor cynapse device includes the following steps: that (1) prepares p-type heavy doping monocrystalline polished silicon slice, and carries out washing and drying treatment；(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
Description
Technical field
The invention belongs to silicon-based electronic devices and neuromorphic chip field, and in particular to one kind is based on SiOx:Ag/
TiOxMemristor cynapse device of double change resistance layers and preparation method thereof.
Background technique
In recent years, concern of the artificial neuron cynapse based on memristor by researcher." sandwich " structure is typical
Memory resistor structure, this structure top layer are top electrode, and bottom is lower electrode, and middle layer is memristor material.Memristor material is main
There is three classes resistive mechanism: ionic effect, electronic effect and fuel factor, the memristor material based on ionic effect is current research heat
Point.For ionic effect, according to different ionic species, the variation of valence memory effect memory as caused by anion can be divided into
(valence change memory, VCM) and the electrochemical metallization memory (electrochemical as caused by cation
metallization cell,ECM).VCM component carrier is oxide-insulator, and oxonium ion migrates under electric field action,
Lacking oxygen defect is generated, so that forming channel realizes resistive；ECM device is formed in the dielectric layer by regulating and controlling metal ion
Conductive channel realize resistive, top electrode is generally active metal, and lower electrode is generally inert electrode.Not due to working principle
Together, the memristor constructed based on different material systems prepares artificial neuron cynapse device, has different cynapse performances.
Based on " electrode of metal/SiOxThe memristor of/lower electrode " structure building, has that on-off ratio is big, threshold voltage is low
The advantages that.But " electrode of metal/SiOxThe memristor of/lower electrode " structure, since change resistance layer only has simple one layer of medium
SiOxFilm can not achieve the continuously adjustable of weight, limit its application in artificial neuron cynapse.In order to realize that cynapse is weighed
Weight is continuously adjusted, and researchers use the gradient SiO containing different Ag concentrationx: Ag replaces SiOx, still, performance improvement is not
Obviously.Up to the present, " synapse weight is continuously adjustable " and " cynapse performance the operation is stable " etc. how are realized well, are to be based on
A major issue (the ginseng that the mono- change resistance layer memristor cynapse device success of SiOx:Ag needs to solve for artificial neuron cynapse
Examine foundation: CN 107611260A, CN 109037442A, CN 106098932A, CN 108933178A, CN 105304813A,
CN 104916313A, CN 104934534A).
Summary of the invention
In order to better solve problem above, the invention proposes one kind to be based on SiOx:Ag/TiOxThe memristor of double change resistance layers
Cynapse device and preparation method thereof.This double change resistance layer memristor cynapse devices increase one layer of metal ion transport resistance in structure
Barrier is capable of the electrical response characteristic of Effective Regulation cynapse device, make device under electrical stimuli " change in resistance continuously may be used
Tune ", " cynapse performance the operation is stable ", " device lifetime is more lasting ".
For achieving the above object, technical solution of the present invention is as follows:
One kind being based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, powers on including what is set gradually from top to bottom
Pole, the first change resistance layer, the second change resistance layer, lower electrode；
First change resistance layer 3 is the SiO of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering methodxIt is thin
Film, x=1.8~2.0；
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
Second change resistance layer 4 is the TiO obtained by magnetically controlled sputter methodxFilm, x=2.0~2.5；
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, overall thickness are 30nm~100nm；
The preparation method of the device includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
It is preferred that the SiO of the silver-containing nanoparticles of first change resistance layer 3xFilm, with a thickness of 30nm~
50nm, silver nano-grain volume content are 15%~35%；
It is preferred that the TiO of second change resistance layer 4xFilm, with a thickness of 8nm~30nm.
It is preferred that the top electrode upper layer metal is selected from, Pt, Al, Cu are one such, and lower metal is silver.
It is preferred that the lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
For achieving the above object, the present invention also provides a kind of above-mentioned based on SiOx:Ag/TiOxThe memristor of double change resistance layers
The preparation method of cynapse device, includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
For metal selects Pt by upper layer, illustrate basic functional principle of the invention:
In " Pt-Ag/SiOx:Ag/TiOx/p++In-Si " memristor cynapse device, Ag ion is moved under electric field action
It moves, the migration rate of Ag ion and the power of electric field are related.The present invention utilizes TiOxThin-film dielectric constant is big, built in field is small
Feature stops or slows down Ag ion to contact with the direct of lower electrode, so as to improve the electric property of nerve synapse device.Specifically
It says, when in memristor " Pt-Ag/SiOx:Ag/TiOx/p++When applying bias voltage on-Si ", due to TiOxFilm ratio SiOxFilm
Dielectric constant it is big, SiOxElectric field ratio TiO in filmxElectric-field strength in film, therefore, Ag ion are easy stronger in electric field
SiOxFast transferring in film, and it is difficult the TiO weaker in electric fieldxIt is migrated in film.
The invention has the benefit that TiOxFilm can effectively act as the work for stopping Ag ion and lower electrode directly to contact
With making it have that " change in resistance continuously adjustable ", " cynapse performance is steady so as to improve the electric property of memristor cynapse device
Calmly ", the features such as " device lifetime is more lasting ".
Detailed description of the invention
Fig. 1 is device architecture schematic diagram of the invention.
1 it is upper layer metal, 2 be lower metal, 3 be the first change resistance layer, 4 be the second change resistance layer, 5 is lower electrode.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Embodiment 1
It present embodiments provides a kind of based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, structure such as Fig. 1 institute
Show, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；
First change resistance layer 3 is the SiO of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering methodxIt is thin
Film, x=1.8~2.0, with a thickness of 45nm, silver nano-grain volume content is 15%.
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
Second change resistance layer 4 is the TiO obtained by magnetically controlled sputter methodxFilm, x=2.0~2.5, with a thickness of
8nm。
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, overall thickness 30nm, upper layer metal are Pt, and lower metal is silver.
The lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
The present embodiment is also provided described in one kind based on SiOx:Ag/TiOxThe preparation side of the memristor cynapse device of double change resistance layers
Method includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
(5) cleaning, dry subsequent handling are completed.
Embodiment 2
It present embodiments provides a kind of based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, structure such as Fig. 1 institute
Show, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；
First change resistance layer 3 is the SiO of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering methodxIt is thin
Film, x=1.8~2.0, with a thickness of 30nm, silver nano-grain volume content is 35%.
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
Second change resistance layer 4 be by magnetically controlled sputter method obtain TiOx film, x=2.0~2.5, with a thickness of
20nm。
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, overall thickness 100nm, upper layer metal are Al, and lower metal is silver.
The lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
The present embodiment is also provided described in one kind based on SiOx:Ag/TiOxThe preparation side of the memristor cynapse device of double change resistance layers
Method includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
(5) cleaning, dry subsequent handling are completed.
Embodiment 3
It present embodiments provides a kind of based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, structure such as Fig. 1 institute
Show, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；
First change resistance layer 3 is the SiO of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering methodxIt is thin
Film, x=1.8~2.0, with a thickness of 50nm, silver nano-grain volume content is 20%.
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
Second change resistance layer 4 is the TiO obtained by magnetically controlled sputter methodxFilm, x=2.0~2.5, with a thickness of
30nm。
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, overall thickness 70nm, upper layer metal are Cu, and lower metal is silver.
The lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
The present embodiment is also provided described in one kind based on SiOx:Ag/TiOxThe preparation side of the memristor cynapse device of double change resistance layers
Method includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
(5) cleaning, dry subsequent handling are completed.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (6)
1. one kind is based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, it is characterised in that: including successively setting from top to bottom
The top electrode set, the first change resistance layer, the second change resistance layer, lower electrode；
First change resistance layer is the SiO of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering methodxFilm, x=
1.8~2.0；
The second change resistance layer of the memristor cynapse device is inserted between the first change resistance layer and lower electrode as metal ion barrier layer；
Second change resistance layer is the TiO obtained by magnetically controlled sputter methodxFilm, x=2.0~2.5；
The two-layer compound that the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal are constituted that powers on powers on
Pole, overall thickness are 30nm~100nm；
The preparation method of the device includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
2. according to claim 1 a kind of based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, feature exist
In: the SiO of the silver-containing nanoparticles of first change resistance layerxFilm, with a thickness of 30nm~50nm, silver nano-grain volume contains
Amount is 15%~35%.
3. according to claim 1 a kind of based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, feature exist
In: the TiO of second change resistance layerxFilm, with a thickness of 8nm~30nm.
4. according to claim 1 a kind of based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, feature exist
In: the top electrode upper layer metal is one such selected from Pt, Al, Cu, and lower metal is silver.
5. according to claim 1 a kind of based on SiOx:Ag/TiOxThe memristor cynapse device of double change resistance layers, feature exist
In: the lower electrode is that p-type heavy doping polishes monocrystalline silicon piece.
6. being based on SiO described in claim 1 to 5 any onex: the preparation side of the memristor cynapse device of the bis- change resistance layers of Ag/TiOx
Method, it is characterised in that include the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832218A (en) * | 2004-12-24 | 2006-09-13 | 三星电子株式会社 | Method for preparing nonvolatile organic memory devices and nonvolatile organic memory devices prepared by the same |
| CN104659208A (en) * | 2015-02-05 | 2015-05-27 | 中国科学院微电子研究所 | Non-volatile resistive random access memory device and preparation method thereof |
| CN106098932A (en) * | 2016-06-16 | 2016-11-09 | 北京大学 | A kind of linear gradual memristor and preparation method thereof |
| CN109037442A (en) * | 2018-08-07 | 2018-12-18 | 电子科技大学 | Based on a-SiOxSPR nerve synapse device of memristor effect and preparation method thereof |
-
2019
- 2019-08-27 CN CN201910796689.6A patent/CN110400873A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1832218A (en) * | 2004-12-24 | 2006-09-13 | 三星电子株式会社 | Method for preparing nonvolatile organic memory devices and nonvolatile organic memory devices prepared by the same |
| CN104659208A (en) * | 2015-02-05 | 2015-05-27 | 中国科学院微电子研究所 | Non-volatile resistive random access memory device and preparation method thereof |
| CN106098932A (en) * | 2016-06-16 | 2016-11-09 | 北京大学 | A kind of linear gradual memristor and preparation method thereof |
| CN109037442A (en) * | 2018-08-07 | 2018-12-18 | 电子科技大学 | Based on a-SiOxSPR nerve synapse device of memristor effect and preparation method thereof |
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