CN110504358A - Based on the memristor cynapse device and preparation method for mixing silver-colored silicon oxynitride and titanium oxide - Google Patents
Based on the memristor cynapse device and preparation method for mixing silver-colored silicon oxynitride and titanium oxide Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000002156 mixing Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 230000008859 change Effects 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 238000001035 drying Methods 0.000 claims abstract description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 8
- 238000005406 washing Methods 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 10
- 239000002105 nanoparticle Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000005684 electric field Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 210000002569 neuron Anatomy 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 210000000225 synapse Anatomy 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 210000005036 nerve Anatomy 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The present invention provide it is a kind of based on the memristor cynapse device and preparation method of mixing silver-colored silicon oxynitride and titanium oxide, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；The second change resistance layer of the memristor cynapse device is inserted between the first change resistance layer and lower electrode as metal ion barrier layer；The preparation method based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide includes the following steps: that (1) prepares p-type heavy doping monocrystalline polished silicon slice, and carries out washing and drying treatment；(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
Description
Technical field
The invention belongs to silicon-based electronic devices and neuromorphic chip field, and in particular to one kind is based on mixing silver-colored nitrogen oxidation
Silicon and the memristor cynapse device of titanium oxide and preparation method thereof.
Background technique
In recent years, concern of the artificial neuron cynapse based on memristor by researcher." sandwich " structure is typical
Memory resistor structure, this structure top layer are top electrode, and bottom is lower electrode, and middle layer is memristor material.Memristor material is main
There is three classes resistive mechanism: ionic effect, electronic effect and fuel factor, the memristor material based on ionic effect is current research heat
Point.For ionic effect, according to different ionic species, the variation of valence memory effect memory as caused by anion can be divided into
(valence change memory, VCM) and the electrochemical metallization memory (electrochemical as caused by cation
metallization cell,ECM).VCM component carrier is oxide-insulator, and oxonium ion migrates under electric field action,
Lacking oxygen defect is generated, so that forming channel realizes resistive；ECM device is formed in the dielectric layer by regulating and controlling metal ion
Conductive channel realize resistive, top electrode is generally active metal, and lower electrode is generally inert electrode.Not due to working principle
Together, the memristor constructed based on different material systems prepares artificial neuron cynapse device, has different cynapse performances.
Based on the memristor of " metal/silica/lower electrode " structure building, it is excellent to have that on-off ratio is big, threshold voltage is low etc.
Point.But the memristor of " metal/silica/lower electrode " structure, since change resistance layer only has simple one layer of medium oxidizing silicon thin
Film can not achieve the continuously adjustable of weight, limit its application in artificial neuron cynapse.In order to realize the company of synapse weight
Continue adjustable, researchers replace silica using the graded oxidation silicon containing different silver-colored (Ag) concentration, and still, performance improvement is not
Obviously.Up to the present, " synapse weight is continuously adjustable " and " cynapse performance the operation is stable " etc. how are realized well, are to be based on
Argentiferous silica list change resistance layer memristor cynapse device success needs the major issue solved for artificial neuron cynapse
(reference frame: CN 107611260A, CN 109037442A, CN 106098932A, CN 108933178A, CN
105304813A, CN 104916313A, CN 104934534A).
Summary of the invention
In order to better solve problem above, the invention proposes a kind of based on the memristor for mixing silver-colored silicon oxynitride and titanium oxide
Cynapse device and preparation method thereof.This double change resistance layer memristor cynapse devices increase one layer of metal ion transport resistance in structure
Barrier is capable of the electrical response characteristic of Effective Regulation cynapse device, make device under electrical stimuli " change in resistance continuously may be used
Tune ", " cynapse performance the operation is stable ", " device lifetime is more lasting ".
For achieving the above object, technical solution of the present invention is as follows:
It is a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, powered on including what is set gradually from top to bottom
Pole, the first change resistance layer, the second change resistance layer, lower electrode；
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, upper layer metal is one such selected from Pt, Al, Cu, and lower metal is silver；
First change resistance layer 3 is the silicon oxynitride of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering method
Film, silver nano-grain volume content are 15%~35%；
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
Second change resistance layer 4 is the thin film of titanium oxide obtained by magnetically controlled sputter method；
The lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
It is preferred that second change resistance layer 4 is the thin film of titanium oxide obtained by magnetically controlled sputter method, thickness
For 8nm~35nm.
It is preferred that first change resistance layer 3 is the silicon oxynitride film of silver-containing nanoparticles, with a thickness of 80nm
~200nm.
It is preferred that the top electrode overall thickness is 30nm~100nm.
It is preferred that described is a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, by such as
Lower preparation method obtains:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
For achieving the above object, the present invention also provides a kind of above-mentioned based on the memristor for mixing silver-colored silicon oxynitride and titanium oxide
The preparation method of cynapse device, includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
Basic functional principle of the invention is: in " top electrode/argentiferous silicon oxynitride/titanium oxide/lower electrode " memristor cynapse
In device, silver-colored (Ag) ion is migrated under electric field action, and the migration rate of Ag ion and the power of electric field are related.The present invention
The feature big using thin film of titanium oxide dielectric constant, built in field is small stops or slows down Ag ion to contact with the direct of lower electrode,
So as to improve the electric property of nerve synapse device.Specifically, when in memristor " top electrode/argentiferous silicon oxynitride/oxidation
When applying bias voltage on titanium/lower electrode ", since thin film of titanium oxide is bigger than the dielectric constant of silicon oxide film, silicon oxide film
In electric field than the electric-field strength in thin film of titanium oxide, therefore, Ag ion is easy quickly to move in the stronger silicon oxide film of electric field
It moves, and is difficult to migrate in the weaker thin film of titanium oxide of electric field.
The invention has the benefit that thin film of titanium oxide can effectively act as Ag ion and lower electrode is stopped directly to contact
Effect makes it have " change in resistance is continuously adjustable ", " cynapse performance so as to improve the electric property of memristor cynapse device
The features such as stabilization ", " device lifetime is more lasting ".
Detailed description of the invention
Fig. 1 is device architecture schematic diagram of the invention.
1 it is upper layer metal, 2 be lower metal, 3 be the first change resistance layer, 4 be the second change resistance layer, 5 is lower electrode.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Embodiment 1
It present embodiments provides a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, structure such as Fig. 1
It is shown, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, overall thickness 30nm, upper layer metal are Pt, and lower metal is silver.
First change resistance layer 3 is the silicon oxynitride of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering method
Film, with a thickness of 80nm, silver nano-grain volume content is 15%.
Second change resistance layer 4 is the thin film of titanium oxide obtained by magnetically controlled sputter method, with a thickness of 8nm.
The lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
The present embodiment also provides the preparation side based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide described in one kind
Method includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
(5) cleaning, dry subsequent handling are completed.
Embodiment 2
It present embodiments provides a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, structure such as Fig. 1
It is shown, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, overall thickness 100nm, upper layer metal are Al, and lower metal is silver.
First change resistance layer 3 is the silicon oxynitride of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering method
Film, with a thickness of 200nm, silver nano-grain volume content is 35%.
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
Second change resistance layer 4 is the thin film of titanium oxide obtained by magnetically controlled sputter method, with a thickness of 35nm.
The lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
The present embodiment also provides the preparation side based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide described in one kind
Method includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
(5) cleaning, dry subsequent handling are completed.
Embodiment 3
It present embodiments provides a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, structure such as Fig. 1
It is shown, including set gradually from top to bottom top electrode, the first change resistance layer, the second change resistance layer, lower electrode；
The two-layer compound for powering on the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal and constituting
Top electrode, overall thickness 60nm, upper layer metal are Cu, and lower metal is silver.
First change resistance layer 3 is the silicon oxynitride of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering method
Film, with a thickness of 150nm, silver nano-grain volume content is 25%.
Second change resistance layer 4 is the thin film of titanium oxide obtained by magnetically controlled sputter method, with a thickness of 25nm.
The second change resistance layer of the memristor cynapse device is inserted in the first change resistance layer and lower electrode as metal ion barrier layer
Between；
The lower electrode 5 is that p-type heavy doping polishes monocrystalline silicon piece.
The present embodiment also provides the preparation side based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide described in one kind
Method includes the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
(5) cleaning, dry subsequent handling are completed.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (6)
1. a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, it is characterised in that: including from top to bottom successively
The top electrode of setting, the first change resistance layer, the second change resistance layer, lower electrode；
The two-layer compound that the upper layer metal extremely obtained using magnetically controlled DC sputtering and lower metal are constituted that powers on powers on
Pole, upper layer metal is one such selected from Pt, Al, Cu, and lower metal is silver；
First change resistance layer is the silicon oxynitride film of the silver-containing nanoparticles obtained by reaction magnetic control co-sputtering method,
Silver nano-grain volume content is 15%~35%；
The second change resistance layer of the memristor cynapse device is inserted between the first change resistance layer and lower electrode as metal ion barrier layer；
Second change resistance layer is the thin film of titanium oxide obtained by magnetically controlled sputter method；
The lower electrode is that p-type heavy doping polishes monocrystalline silicon piece.
2. according to claim 1 a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, feature exists
In: second change resistance layer is the thin film of titanium oxide obtained by magnetically controlled sputter method, with a thickness of 8nm~35nm.
3. according to claim 1 a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, feature exists
In: first change resistance layer is the silicon oxynitride film of silver-containing nanoparticles, with a thickness of 80nm~200nm.
4. according to claim 1 a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide, feature exists
In: the top electrode overall thickness is 30nm~100nm.
5. it is a kind of based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide described in Claims 1-4 any one,
It is characterized in that method, which is prepared by the following procedure, to be obtained:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
6. the preparation side based on the memristor cynapse device for mixing silver-colored silicon oxynitride and titanium oxide described in Claims 1-4 any one
Method, it is characterised in that include the following steps:
(1) prepare p-type heavy doping monocrystalline polished silicon slice, and carry out washing and drying treatment；
(2) the second change resistance layer is prepared on p-type heavy doping monocrystalline silicon piece using magnetically controlled sputter method；
(3) the first change resistance layer is prepared on the second change resistance layer using reaction magnetic control co-sputtering method；
(4) top electrode is prepared on the first change resistance layer using DC magnetron sputtering method.
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| CN111564555A (en) * | 2020-05-20 | 2020-08-21 | 浙江大学 | Resistive random access memory with improved working stability and memory window and preparation method thereof |
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| CN106098932A (en) * | 2016-06-16 | 2016-11-09 | 北京大学 | A kind of linear gradual memristor and preparation method thereof |
| CN109065714A (en) * | 2018-08-07 | 2018-12-21 | 电子科技大学 | Based on a-SiOxNySPR nerve synapse device of memristor effect and preparation method thereof |
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- 2019-08-27 CN CN201910795555.2A patent/CN110504358A/en active Pending
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| CN1832218A (en) * | 2004-12-24 | 2006-09-13 | 三星电子株式会社 | Method for preparing nonvolatile organic memory devices and nonvolatile organic memory devices prepared by the same |
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| CN106098932A (en) * | 2016-06-16 | 2016-11-09 | 北京大学 | A kind of linear gradual memristor and preparation method thereof |
| CN109065714A (en) * | 2018-08-07 | 2018-12-21 | 电子科技大学 | Based on a-SiOxNySPR nerve synapse device of memristor effect and preparation method thereof |
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| CN111564555A (en) * | 2020-05-20 | 2020-08-21 | 浙江大学 | Resistive random access memory with improved working stability and memory window and preparation method thereof |
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