CN109065714A - Based on a-SiOxNySPR nerve synapse device of memristor effect and preparation method thereof - Google Patents
Based on a-SiOxNySPR nerve synapse device of memristor effect and preparation method thereof Download PDFInfo
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- 210000000225 synapse Anatomy 0.000 title claims abstract description 45
- 210000005036 nerve Anatomy 0.000 title claims abstract description 39
- 230000000694 effects Effects 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 97
- 230000008859 change Effects 0.000 claims abstract description 74
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 45
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004026 adhesive bonding Methods 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000013528 metallic particle Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 13
- 230000005611 electricity Effects 0.000 abstract description 6
- 238000005265 energy consumption Methods 0.000 abstract description 5
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- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 239000002105 nanoparticle Substances 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 210000004556 brain Anatomy 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000013528 artificial neural network Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
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- 230000019491 signal transduction Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003925 brain function Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 230000002490 cerebral effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 230000004751 neurological system process Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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Abstract
Based on a-SiOxNySPR nerve synapse device of memristor effect and preparation method thereof, belongs to bionical device arts.The present invention is by crystalline silicon prism and " top electrode/a-SiOxNy: the double change resistance layer/hearth electrodes of metal nanoparticle " memristor structure Coupling; so that optical signal through crystalline silicon prism is incident upon double change resistance layers under electrical modulation; and use surface plasma body resonant vibration (SPR) effect; so that the change in dielectric constant information of change resistance layer is read out in device operation with optical signal, and then realize that the light of device synapse weight is read." electrical modulation; light is read " nerve synapse device proposed by the invention has tradition " electrical modulation; electricity is read " incomparable advantage of nerve synapse device, because it not only has the characteristics such as traditional memristor low energy consumption, non-volatile, but also the advantage that signal processing band is roomy, anti-electromagnetic interference capability is strong is carried out as information carrier with light.
Description
Technical field
The invention belongs to bionical device arts, and in particular to be based on a-SiOxNyThe SPR neural process tentaculum of memristor effect
Part and preparation method thereof.
Background technique
Traditional computer is based on " von Neumann framework ", however, information-storing device in " von Neumann framework "
Data call and transmission are connected by bus between processor, this mode make the efficiency of information processing not only by
The influence of processor arithmetic speed, memory rate also suffers from the restriction of bus message transmittability, forms so-called " Feng
Nuo Yiman bottleneck ".Although human brain processing information content it is few unlike computer, obviously it is more efficient, energy consumption is smaller.For
This, researcher constructs the theory of intelligent computer, it is expected that allowing computer learning neural network more preferably to simulate human brain function
Can, produce the computer for being more nearly human brain.Therefore, it studies, develop with class human brain adaptive ability, can locate parallel
The neurobionics computer of reason much information is the research hotspot in future computer field all the time.Biophysical studies table
Bright, the completion of cerebral function is inseparable with nerve synapse, the plasticity of nerve synapse be brain be completed at the same time information storage and
The basis of processing.Thus, the important step that human simulation is artificial neural network research, and neural shape are carried out to nerve synapse
The key of state computer and the research of other intelligent terminals.
In intelligent device and nerve synapse analogue simulation research field, memristor is caused by its novel characteristic
Researcher's note that it was discovered by researchers that according to memristor theoretical model, resistance value can with apply voltage and occur
Variation, and can remember the state changed, unique nonlinear transmission characteristic possessed by memristor, with nerve in biological brain
The behavior of cynapse and principle have very high similitude.And to make memristor be highly suitable as nerve synapse imitative for this similitude
Raw device, and it is used for construction neuromorphic chip, and then be used for artificial neural network.In traditional neuromorphic chip
In, transistor is the basic unit for constructing bionical cynapse.However, the bionical cynapse device based on transistor, not only bulky,
Energy consumption is high, learning ability is poor, and forms new weight and have to rebuild circuit.In contrast, memristor be it is a kind of more
For outstanding bionical cynapse device.Because memristor is as bionical cynapse device, not only small in size, low in energy consumption, recyclable number
Height, and its working condition (resistance value after excitation) does not need energy to maintain and (have self-maintaining), it is even more important that its
Resistance value has continuous adjustability.However, still there is also defects for memristor, due to now (being hindered based on memristor both at home and abroad at present
Transition storage ReRAM) construction neuromorphic chip, synapse weight is written and is read as information media using electric signal
It takes, i.e. " electrical modulation, electricity are read " mode, and the main shortcoming of this operating mode is that signal processing bandwidth is small, electric
Crosstalk is easy to produce in signal transduction process.
Summary of the invention
In view of described above, existing signal processing band when the present invention is for the existing bionical cynapse work based on memristor
The problem of width is small, crosstalk easily occurs for signal transduction process provides a kind of based on a-SiOxNyThe light of memristor effect reads SPR mind
Through cynapse device and preparation method thereof.The present invention is designed by reasonable structure, so that nerve synapse devices use optical signal is made
For information media, and synapse weight is represented with light intensity, the latter is read out, breaches the processing of traditional neural cynapse device signal
Bandwidth limitation and electromagnetic interference.
To achieve the goals above, the present invention adopts the following technical scheme:
The one side present invention provides a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
Including memristor and the crystalline silicon prism being arranged in above the memristor, the memristor has " hearth electrode/the from bottom to top
One a-SiOxNyChange resistance layer/the 2nd a-SiOxNyThe vertical four-layer structure of change resistance layer/top electrode ", the refractive index of the crystalline silicon prism
Not less than the 2nd a-SiOxNyThe refractive index of change resistance layer, so that near infrared light through crystalline silicon prism is incident upon under electrical modulation
One " a-SiOxNyChange resistance layer/the 2nd a-SiOxNyThe double change resistance layers of change resistance layer ", cause top electrode and the 2nd a-SiOxNyChange resistance layer it
Between interface plasma generate resonance.
Further, crystal silicon wafer is additionally provided between memristor and crystalline silicon prism in the present invention.
Further, the material of top electrode is selected from metallic silver or gold in the present invention, with a thickness of 30nm~60nm.
Further, the material of hearth electrode is selected from metal platinum, metallic aluminium or p-type heavy doping a-Si material in the present invention,
With a thickness of 100nm~500nm.Preferably, the hearth electrode is circular electrode array, and array element diameter is 5 μ
M~300 μm, the edge spacing of adjacent array element are 5 μm~20 μm.
Further, the first a-SiO in the present inventionxNyChange resistance layer can be pure a-SiOxNyFilm, or contain gold
The a-SiO of metal nano-particlexNyFilm；2nd a-SiO in the present inventionxNyChange resistance layer is the a-SiO containing metal nanoparticlexNy
Film, and its metal nanoparticle content is higher than the first a-SiOxNyThe metal nanoparticle content of change resistance layer.The metal is received
Rice grain is selected from Ag, Cu or Al.
It is preferred that the first a-SiOxNyThe percentage by volume of change resistance layer metal nanoparticle is not higher than 10%,
2nd a-SiOxNyThe percentage by volume of change resistance layer metallic particles is 20%~45%.
In a-SiOxNyMaterial prepares rich metal layer and scarce metal layer, for realizing the resistance adjustability of device.Because of rich gold
Belong to layer and compare and lacks metal layer there is higher electric conductivity, there are uniform conductive leading end interface between this two layers, and conductive leading end
Understand and moves with application voltage to rich metal layer (perhaps scarce metal layer) so as to cause rich metal layer (or scarce metal layer) whole
Ratio in body device becomes smaller, and then increases (reduction) electric conductivity.
Further, the first a-SiO in the present inventionxNyChange resistance layer is the intrinsic amorphous silicon oxinitride as made from sputtering method
(a-SiOxNy) film or by cosputtering method be made the nano particle containing Ag, Cu and Al one of which metal amorphous nitrogen oxygen
SiClx (a-SiOxNy) film, with a thickness of 30nm~100nm.
Further, the 2nd a-SiO in the present inventionxNyChange resistance layer is to be made by cosputtering method containing Ag, Cu and Al wherein one
Amorphous silicon (the a-SiO of the nano particle of kind metalxNy) film, with a thickness of 10nm~50nm.
Further, optical signal is TM polarised light in the present invention, and wave-length coverage is 800nm~1700nm.
The another aspect present invention provides a kind of based on above-mentioned a-SiOxNyThe preparation of the SPR nerve synapse device of memristor effect
Method, which comprises the steps of:
Step A: the production of memristor:
A1: crystal silicon wafer bottom surface deposition metal layer as top electrode；
A2: double change resistance layer windows are formed in the top electrode bottom surface, then at the bottom of gluing and patterned top electrode
A-SiO is sequentially depositing on facexNyFilm is as the 2nd a-SiOxNyChange resistance layer and the first a-SiOxNyChange resistance layer, the first a-
SiOxNyChange resistance layer is intrinsic amorphous silicon oxynitride silicon thin film or the amorphous silicon oxinitride (a-SiO containing metal nanoparticlexNy)
Film, the 2nd a-SiOxNyChange resistance layer is the amorphous silicon oxinitride (a-SiO containing metal nanoparticlexNy) film, and its
Metal nanoparticle content is compared with the first aa-SiOxNyExtra " the 2nd a-SiO is removed after the completion of change resistance layer height is to be depositedxNyResistive
Layer/the first a-SiOxNyThe double change resistance layers of change resistance layer "；
A3: in the first a-SiOxNyThe bottom surface of change resistance layer forms hearth electrode pattern, then in gluing and patterned
First a-SiOxNyDeposited metal layer on change resistance layer removes extra metal layer after the completion of to be deposited, is made and is located at the first a-
SiOxNyThe hearth electrode of change resistance layer bottom surface；So far memristor is made；
Step B: the production of nerve synapse device:
Crystalline silicon prism and the memristor obtained through step A is bonding, so far complete the system of SPR nerve synapse device
It is standby.
Further, the production of memristor can be carried out directly in crystalline silicon prism bases in the present invention, that is, save crystal
Silicon wafer and bonding operation directly make " hearth electrode/the first a-SiO in the bottom surface of crystalline silicon prismxNyChange resistance layer/the 2nd a-
SiOxNyThe memristor of the vertical four-layer structure of change resistance layer/top electrode ".
Further, hearth electrode, the first a-SiO in the present inventionxNyChange resistance layer and the 2nd a-SiOxNyThe deposition of change resistance layer is equal
It is realized using physical vaporous deposition combination photoetching process.
Basic principle of the invention is: the refractive index of the relatively double change resistance layers of crystalline silicon prism is larger, works as specific wavelength in this way
Incident light from the plane of incidence of crystalline silicon prism with incidence angle θsIt is incident when being mapped to the bottom of crystalline silicon prism or crystal silicon wafer
Top electrode surface of the light below crystalline silicon prism or crystal silicon wafer generates evanescent wave, so with " top electrode/second-Si hinders
The surface plasma of change layer " interface generates resonance (SPR), so that meeting the incidence angle θsOptical signal be strongly absorbed,
And the optical signal being strongly absorbed is through reflecting the exit facet output from crystalline silicon prism with minimum amplitude.When in device top electrode
When being biased (electrical modulation) between hearth electrode, the 2nd a-SiOxNyChange resistance layer and the first a-SiOxNyThe interface of change resistance layer exists
It will move under electric field action, so that the dielectric constant of double change resistance layers changes between top electrode and hearth electrode, and then make
Surface plasma body resonant vibration (SPR) condition for obtaining incident light and top electrode changes therewith, if at this point, optical signal is still pressed
According to incidence angle θ as hereinbeforesWhen being mapped to crystalline silicon prism or crystal silicon wafer bottom, due to incident light and top electrode
SPR condition changes, that is, above-mentioned " extreme value " condition for minimum light amplitude occur is destroyed, so weaken etc. from
Sub- absorption, so that via the enhanced strength of the output optical signal detected in crystalline silicon prism exit facet；At this time just need
Change the incidence angle θ of incident lights, so that incident light and top electrode meet SPR condition again, to make again after reflection
The optical signal exported from the exit facet of crystalline silicon prism has the smallest amplitude, is applied to top electrode and bottom particular by change
The bias condition (electrical modulation) of voltage, makes the 2nd a-SiO between electrodexNyChange resistance layer and the first a-SiOxNyResistive bed boundary pushes away
Shifting carries out in the way of gradual change, reversible (positive counter voltage switching).For any one the 2nd a-SiOxNyChange resistance layer and the first a-
SiOxNyInterface location (it corresponds to synapse weight), meets the angle of light θ of SPR condition between change resistance layersIt is always unique.
Therefore, in a cycle of electrical modulation, the 2nd a-SiO is driven by bias voltagexNyChange resistance layer and the first a-SiOxNyResistive
The variation of interface location is, it can be achieved that " the first a-SiO between layerxNyChange resistance layer/the 2nd a-SiOxNyThe resistance of the double change resistance layers of change resistance layer "
It is worth the consecutive variations of consecutive variations or synapse weight, so that meeting the incidence angle θ of SPR conditionsConsequently also change.It is aobvious
So, in nerve synapse device proposed by the present invention, synapse weight and surface plasma body resonant vibration incidence angle θsThere are an a pair
It should be related to, " electrical modulation, light are read " of memristor nerve synapse device is achieved based on this.
Compared with prior art, beneficial effects of the present invention are as follows:
Nerve synapse device of the present invention combines microelectronic element memristor and optical prism, specifically by big refractive index
Element --- crystalline silicon prism and " top electrode/a-SiOxNy: the double change resistance layer/hearth electrodes of metal nanoparticle " memristor structure phase
Coupling, guarantees that incident light enters the lesser double change resistance layers of refractive index along the larger material of refractive index with this, help avoid plunderring into
Penetrate, reduce light loss, and use surface plasma body resonant vibration (SPR) effect so that in device operation change resistance layer dielectric
Constant change information is read out with optical signal, and then realizes that the light of synapse weight is read.Because optical signal has with roomy, anti-
The strong feature of electromagnetic interference capability, therefore, " electrical modulation, light are read " nerve synapse device tradition proposed by the invention " adjust by electricity
System, electricity are read " the incomparable advantage of nerve synapse device, not only there are the spies such as traditional memristor low energy consumption, non-volatile
Property, but also the advantage that signal processing band is roomy, anti-electromagnetic interference capability is strong is carried out as information carrier with light.
Detailed description of the invention
Fig. 1 is 1 diagrammatic side view of device architecture of the invention.
Fig. 2 is 2 diagrammatic top view of device architecture of the invention.
Fig. 3 is device architecture diagrammatic top view of the invention.
Attached meaning marked in the figure are as follows:
1 is hearth electrode, and 2 be the first a-SiOxNyChange resistance layer, 3 be the 2nd a-SiOxNyChange resistance layer, 4 be top electrode, and 5 be crystalline substance
Body silicon wafer, 6 be crystalline silicon prism.
Specific embodiment
Clear, complete description is carried out to technical solution of the present invention with specific embodiment with reference to the accompanying drawings of the specification, with
Phase is skilled artisans appreciate that the principle of the present invention and characteristic.
Embodiment 1:
One kind being based on a-SiOxNyThe SPR nerve synapse device of memristor effect, structure include as shown in Figure 1: memristor and
Crystalline silicon prism 6 above the memristor is set, and crystalline silicon prism 6 is three be process by crystalline silicon in the present embodiment
Prism, the memristor have " the oneth a-SiO of hearth electrode 1/ from bottom to topxNyThe 2nd a-SiO of change resistance layer 2/xNyChange resistance layer 3/ pushes up
The vertical four-layer structure of electrode 4 ", top electrode 4 is the metallic silver Ag, the 2nd a- for being deposited on 6 bottom surface of crystalline silicon prism in the present embodiment
SiOxNyChange resistance layer 3 is the a-SiO containing Ag nano particlexNyFilm, the volume fraction of Ag nano particle are 40%, first
a-SiOxNyChange resistance layer 2 is the a-SiO containing Ag nano particlexNyFilm, the volume fraction of Ag nano particle are 5%, top electricity
Pole 4 is to be deposited on the first a-SiOxNyThe metal platinum Pt of 2 bottom surface of change resistance layer；The refractive index of the crystalline silicon prism 6 is not less than described
2nd a-SiOxNyThe refractive index of change resistance layer 3, so that adjusting the electricity being applied between top electrode 4 and hearth electrode 1 under electrical modulation
Pressure, optical signal are incident upon " the first a-SiO through crystalline silicon prismxNyThe 2nd a-SiO of change resistance layer 2/xNyThe double change resistance layers of change resistance layer 3 ",
Cause top electrode 4 and the 2nd a-SiOxNyThe plasma at interface generates resonance between change resistance layer 3.
It has been also provided below above-mentioned based on a-SiOxNyThe preparation method of the SPR nerve synapse device of memristor effect, specifically
Process flow is as follows:
Step 1: prepare crystalline silicon prism 6, the length and width of bottom surface are 15mm；
Step 2: washing and drying treatment is carried out to crystalline silicon prism 6；
Step 3: the metal Ag films with a thickness of 60nm are formed in 6 bottom surface of crystalline silicon prism using physical vaporous deposition
As top electrode 4；
Step 4: in 4 surface spin coating of top electrode, one layer photoresist, using mask plate through photoetching, development, position is formed
The memristor window that central and length and width is 10mm × 10mm in prism bases；Using cosputtering method in gluing and patterned
The 2nd a-SiO containing 40% metal silver nano-grain that thickness is 50nm is sequentially depositing on top electrode 4xNyChange resistance layer 3 and contain
First a-SiO of 5% metal silver nano-grainxNyChange resistance layer 2；Using stripping technology, remove 4 upper center 10mm of top electrode ×
" the first a-SiO other than 10mmxNyThe 2nd a-SiO of change resistance layer 2/xNyThe double change resistance layers of change resistance layer 3 ", obtaining width is 2.5mm's
Top electrode Windows；
Step 5: in the first a-SiOxNy2 surface spin coating of change resistance layer, one layer photoresist, using mask plate through photoetching, development etc.
Step forms and is located at the first a-SiOxNyThe hearth electrode pattern of 2 bottom surface of change resistance layer, the present embodiment use electrode array as shown in Figure 3
Column pattern；Then using cosputtering method in gluing and patterned first a-SiOxNy2 deposited metal platinum Pt of change resistance layer；It uses
Stripping technology removes excess metal platinum Pt, and hearth electrode 1 is made；So far the preparation of device is completed；
Step 6: finally distinguishing extraction electrode from top electrode 4 and hearth electrode 1, be easy to implement the survey of nerve synapse device function
Examination.
Embodiment 2:
One kind being based on a-SiOxNyThe SPR nerve synapse device of memristor effect, structure include as shown in Figure 1: memristor and
Crystal silicon wafer 5 above the memristor is set and the crystalline silicon prism 6 of 5 top of crystal silicon wafer is set, this
Crystalline silicon prism 6 is the prism being process by crystalline silicon in embodiment, crystal silicon wafer 5 be also by crystalline silicon processing and
At being bonded between 5 crystalline silicon prism 6 of crystal silicon wafer preferably with index-matching fluid, the memristor is from bottom to top
With " the oneth a-SiO of hearth electrode 1/xNyThe 2nd a-SiO of change resistance layer 2/xNyThe vertical four-layer structure of 3/ top electrode of change resistance layer 4 ", this reality
Applying 4 top electrode 4 of top electrode in example is the metallic silver Ag, the 2nd a-SiO for being deposited on 6 bottom surface of crystalline silicon prismxNyChange resistance layer 3 be containing
There is the a-SiO of Ag nano particlexNyFilm, the volume fraction of Ag nano particle are 40%, the first a-SiOxNyChange resistance layer 2 is
A-SiO containing Ag nano particlexNyFilm, the volume fraction of Ag nano particle are 5%, and hearth electrode 1 is to be deposited on the first a-
SiOxNyThe metallic aluminium Al of 2 bottom surface of change resistance layer；The refractive index of the crystalline silicon prism 6 is not less than the 2nd a-SiOxNyResistive
The refractive index of layer 3, so that adjusting the voltage being applied between top electrode 4 and hearth electrode 1, optical signal is through crystal under electrical modulation
Silicon prism is incident upon " the first a-SiOxNyThe 2nd a-SiO of change resistance layer 2/xNyThe double resistance layers of change resistance layer 3 ", cause top electrode 4 and second
a-SiOxNyThe plasma at interface generates resonance between change resistance layer 3.
It has been also provided below above-mentioned based on a-SiOxNyThe preparation method of the SPR nerve synapse device of memristor effect, specifically
Process flow is as follows:
Step 1: preparing the crystal silicon wafer 5 of crystalline silicon prism 6 and same material, and the length and width of 6 bottom surface of crystalline silicon prism are equal
For 15mm, the length and width of crystal silicon wafer 5 are 15mm, with a thickness of 1,1mm；
Step 2: washing and drying treatment is carried out to crystalline silicon prism 6 and crystal silicon wafer 5；
Step 3: the metal Ag films with a thickness of 60nm are formed in 5 bottom surface of crystal silicon wafer using physical vaporous deposition
As top electrode 4；
Step 4: in 4 surface spin coating of top electrode, one layer photoresist, using mask plate through photoetching, development, position is formed
The memristor window that central and length and width is 10mm × 10mm in prism bases；Using cosputtering method in gluing and patterned
The 2nd a-SiO containing 40% metal silver nano-grain that thickness is 50nm is sequentially depositing on top electrode 4xNyChange resistance layer 3 and contain
First a-SiO of 5% metal silver nano-grainxNyChange resistance layer 2；Using stripping technology, remove 4 upper center 10mm of top electrode ×
" the first a-SiO other than 10mmxNyThe 2nd a-SiO of change resistance layer 2/xNyThe double change resistance layers of change resistance layer 3 ", obtaining width is 2.5mm's
Top electrode Windows；
Step 5: in the first a-SiOxNy2 surface spin coating of change resistance layer, one layer photoresist, using mask plate through photoetching, development etc.
Step forms and is located at the first a-SiOxNyThe hearth electrode pattern of 2 bottom surface of change resistance layer, the present embodiment use electrode array as shown in Figure 3
Column pattern；Then using magnetron sputtering method in gluing and patterned first a-SiOxNy2 deposited metal aluminium Al of change resistance layer；Make
With stripping technology, excess metal aluminium Al is removed, hearth electrode 1 is made；
Step 6: 6 bottom surface of crystalline silicon prism and crystal silicon wafer 5 not deposited the one of memristor using index-matching fluid
Face coupling, so far completes the preparation of device；
Step 7: finally distinguishing extraction electrode from top electrode 4 and hearth electrode 1, be easy to implement the survey of nerve synapse device function
Examination.
The embodiment of the present invention is elaborated in conjunction with attached drawing above, but the invention is not limited to above-mentioned
Specific embodiment, above-mentioned specific embodiment is only schematical, rather than restrictive, the ordinary skill people of this field
Member under the inspiration of the present invention, can also make many in the case where not departing from present inventive concept and claimed range
Deformation, these belong to protection of the invention.
Claims (10)
1. one kind is based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that: exist including memristor and setting
Crystalline silicon prism above the memristor, the memristor have " hearth electrode/the first a-SiO from bottom to topxNyChange resistance layer/the
Two a-SiOxNyThe refractive index of the vertical four-layer structure of change resistance layer/top electrode ", the crystalline silicon prism is not less than the 2nd a-
SiOxNyThe refractive index of change resistance layer, so that near infrared light through crystalline silicon prism is incident upon " the first a-SiO under electrical modulationxNyResistive
Layer/the 2nd a-SiOxNyThe double change resistance layers of change resistance layer ", cause top electrode and the 2nd a-SiOxNyThe plasma at interface between change resistance layer
Body generates resonance.
2. according to claim 1 a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
Crystal silicon wafer is additionally provided between the memristor and crystalline silicon prism.
3. according to claim 1 a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
The top electrode is metallic silver or gold, with a thickness of 30nm~60nm；The hearth electrode is that metal platinum, metallic aluminium or p-type are heavily doped
Miscellaneous a-SiOxNyMaterial, with a thickness of 100nm~500nm.
4. according to claim 1 a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
First a-SiOxNyChange resistance layer is pure a-SiOxNyFilm；2nd a-SiOxNyChange resistance layer is to contain metal nanoparticle
A-SiOxNyFilm；The metal nanoparticle is selected from, Ag, Cu or Al.
5. according to claim 1 a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
First a-SiOxNyChange resistance layer is the a-SiO containing metal nanoparticlexNyFilm；2nd a-SiOxNyChange resistance layer is
A-SiO containing metal nanoparticlexNyFilm, and the 2nd a-SiOxNyMetal nanoparticle content is higher than in change resistance layer
First a-SiOxNyMetal nanoparticle content in change resistance layer；The metal nanoparticle is selected from, Ag, Cu or Al.
6. according to claim 6 a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
First a-SiOxNyThe percentage by volume of metal nanoparticle is not higher than 10% in change resistance layer；2nd a-SiOxNyResistance
The percentage by volume of change layer metallic particles is 20%~45%.
7. according to claim 1 a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
The near infrared light is TM polarised light, and wave-length coverage is 800nm~1700nm.
8. according to claim 1 a kind of based on a-SiOxNyThe SPR nerve synapse device of memristor effect, it is characterised in that:
First a-SiOxNyChange resistance layer with a thickness of 30nm~100nm；2nd a-SiOxNyChange resistance layer with a thickness of 10nm~
50nm。
9. a kind of a-SiOxNyThe preparation method of the SPR nerve synapse device of memristor effect, which comprises the steps of:
Step A: the production of memristor:
A1: crystal silicon wafer bottom surface deposition metal layer as top electrode；
A2: double change resistance layer windows are formed in the bottom surface of the top electrode, then in the bottom surface of gluing and patterned top electrode
It is upper successively to deposit a-SiO respectively twicexNyFilm is successively used as the 2nd a-SiOxNyChange resistance layer and the first a-SiOxNyChange resistance layer, institute
State the first a-SiOxNyChange resistance layer is intrinsic a-SiOxNyFilm or a-SiO containing metal nanoparticlexNyFilm, described
Two a-SiOxNyChange resistance layer is the a-SiO containing metal nanoparticlexNyFilm, and its metal nanoparticle content is compared with the first a-
SiOxNyChange resistance layer is high, and extra " the 2nd a-SiO is removed after the completion of to be depositedxNyChange resistance layer/the first a-SiOxNyChange resistance layer " is double
Change resistance layer；
A3: in the first a-SiOxNyThe bottom surface of change resistance layer forms hearth electrode pattern, then in gluing and patterned first
a-SiOxNyDeposited metal layer on change resistance layer removes extra metal layer after the completion of to be deposited, is made and is located at the first a-SiOxNyResistance
The hearth electrode of change layer bottom surface；So far memristor is made；
Step B: the production of nerve synapse device:
Crystalline silicon prism and the memristor obtained through step A is bonding, so far complete the preparation of SPR nerve synapse device.
10. according to claim 1 a kind of based on a-SiOxNyThe preparation method of the SPR nerve synapse device of memristor effect,
It is characterized by: the production of the memristor is directly carried out in the bottom surface of crystalline silicon prism.
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