CN109037442A - Based on a-SiOxSPR nerve synapse device of memristor effect and preparation method thereof - Google Patents
Based on a-SiOxSPR nerve synapse device of memristor effect and preparation method thereof Download PDFInfo
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- 210000000225 synapse Anatomy 0.000 title claims abstract description 44
- 210000005036 nerve Anatomy 0.000 title claims abstract description 40
- 230000000694 effects Effects 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 102
- 230000008859 change Effects 0.000 claims abstract description 77
- 239000011521 glass Substances 0.000 claims abstract description 61
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000004026 adhesive bonding Methods 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 15
- 230000005611 electricity Effects 0.000 abstract description 8
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 4
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- 238000010168 coupling process Methods 0.000 abstract description 3
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- 238000000034 method Methods 0.000 description 15
- 239000002105 nanoparticle Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 210000004556 brain Anatomy 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000013528 artificial neural network Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000005304 optical glass Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
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- 238000000605 extraction Methods 0.000 description 2
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- 230000001537 neural effect Effects 0.000 description 2
- 230000019491 signal transduction Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 230000002490 cerebral effect Effects 0.000 description 1
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- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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Abstract
Based on a-SiOxSPR nerve synapse device of memristor effect and preparation method thereof, belongs to bionical device arts.The present invention is by K9 glass prism and " top electrode/a-SiOx: the double change resistance layer/hearth electrodes of metal nanoparticle " memristor structure Coupling; so that optical signal through K9 glass prism is incident upon double change resistance layers under electrical modulation; and use surface plasma body resonant vibration (SPR) effect; so that the change in dielectric constant information of change resistance layer is read out in device operation with optical signal, and then realize that the light of device synapse weight is read." electrical modulation; light is read " nerve synapse device proposed by the invention has tradition " electrical modulation; electricity is read " incomparable advantage of nerve synapse device, because it not only has the characteristics such as traditional memristor low energy consumption, non-volatile, but also the advantage that signal processing band is roomy, anti-electromagnetic interference capability is strong is carried out as information carrier with light.
Description
Technical field
The invention belongs to bionical device arts, and in particular to be based on a-SiOxThe SPR neural process tentaculum of memristor effect
Part and preparation method thereof.
Background technique
Traditional computer is based on " von Neumann framework ", however, information-storing device in " von Neumann framework "
Data call and transmission are connected by bus between processor, this mode make the efficiency of information processing not only by
The influence of processor arithmetic speed, memory rate also suffers from the restriction of bus message transmittability, forms so-called " Feng
Nuo Yiman bottleneck ".Although human brain processing information content it is few unlike computer, obviously it is more efficient, energy consumption is smaller.For
This, researcher constructs the theory of intelligent computer, it is expected that allowing computer learning neural network more preferably to simulate human brain function
Can, produce the computer for being more nearly human brain.Therefore, it studies, develop with class human brain adaptive ability, can locate parallel
The neurobionics computer of reason much information is the research hotspot in future computer field all the time.Biophysical studies table
Bright, the completion of cerebral function is inseparable with nerve synapse, the plasticity of nerve synapse be brain be completed at the same time information storage and
The basis of processing.Thus, the important step that human simulation is artificial neural network research, and neural shape are carried out to nerve synapse
The key of state computer and the research of other intelligent terminals.
In intelligent device and nerve synapse analogue simulation research field, memristor is caused by its novel characteristic
Researcher's note that it was discovered by researchers that according to memristor theoretical model, resistance value can with apply voltage and occur
Variation, and can remember the state changed, unique nonlinear transmission characteristic possessed by memristor, with nerve in biological brain
The behavior of cynapse and principle have very high similitude.And to make memristor be highly suitable as nerve synapse imitative for this similitude
Raw device, and it is used for construction neuromorphic chip, and then be used for artificial neural network.In traditional neuromorphic chip
In, transistor is the basic unit for constructing bionical cynapse.However, the bionical cynapse device based on transistor, not only bulky,
Energy consumption is high, learning ability is poor, and forms new weight and have to rebuild circuit.In contrast, memristor be it is a kind of more
For outstanding bionical cynapse device.Because memristor is as bionical cynapse device, not only small in size, low in energy consumption, recyclable number
Height, and its working condition (resistance value after excitation) does not need energy to maintain and (have self-maintaining), it is even more important that its
Resistance value has continuous adjustability.However, still there is also defects for memristor, due to now (being hindered based on memristor both at home and abroad at present
Transition storage ReRAM) construction neuromorphic chip, synapse weight is written and is read as information media using electric signal
It takes, i.e. " electrical modulation, electricity are read " mode, and the main shortcoming of this operating mode is that signal processing bandwidth is small, electric
Crosstalk is easy to produce in signal transduction process.
Summary of the invention
In view of described above, existing signal processing band when the present invention is for the existing bionical cynapse work based on memristor
The problem of width is small, crosstalk easily occurs for signal transduction process provides a kind of based on a-SiOxThe light of memristor effect reads SPR nerve
Cynapse device and preparation method thereof.The present invention is designed by reasonable structure, so that nerve synapse devices use optical signal conduct
Information media, and synapse weight is represented with light intensity, the latter is read out, breach the processing of traditional neural cynapse device signal
Bandwidth limitation and electromagnetic interference.
To achieve the goals above, the present invention adopts the following technical scheme:
The one side present invention provides a kind of based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: packet
The K9 glass prism for including memristor and being arranged in above the memristor, the memristor have " hearth electrode/the first from bottom to top
a-SiOxChange resistance layer/the 2nd a-SiOxThe refractive index of the vertical four-layer structure of change resistance layer/top electrode ", the K9 glass prism is not less than
2nd a-SiOxThe refractive index of change resistance layer, so that optical signal through K9 glass prism is incident upon " the first a-SiO under electrical modulationxResistance
Change layer/the 2nd a-SiOxThe double change resistance layers of change resistance layer ", cause top electrode and the 2nd a-SiOxThe plasma at interface between change resistance layer
Generate resonance.
Further, K9 glass substrate is additionally provided between memristor and K9 glass prism in the present invention.
Further, the material of top electrode is selected from metallic silver or gold in the present invention, with a thickness of 30nm~60nm.
Further, the present invention in hearth electrode be metal platinum, metallic aluminium or p-type heavy doping a-Si material, with a thickness of
100nm~500nm.Preferably, the hearth electrode is circular electrode array, and array element diameter is 5 μm~300
μm, the edge spacing of adjacent array element is 5 μm~20 μm.
Further, the first a-SiO in the present inventionxChange resistance layer can be pure a-SiOx(amorphous silica) film, can also be with
For the a-SiO containing metal nanoparticlexFilm；2nd a-SiO in the present inventionxChange resistance layer is the a- containing metal nanoparticle
SiOxFilm, and its metal nanoparticle content is higher than the first a-SiOxThe metal nanoparticle content of change resistance layer.The metal
Nano particle is selected from Ag, Cu or Al.
It is preferred that the first a-SiOxThe percentage by volume of change resistance layer metal nanoparticle is not higher than 10%,
2nd a-SiOxThe percentage by volume of change resistance layer metallic particles is 20%~45%.
In a-SiOxMaterial prepares rich metal layer and scarce metal layer, for realizing the resistance adjustability of device.Because of rich gold
Belong to layer and compare and lacks metal layer there is higher electric conductivity, there are uniform conductive leading end interface between this two layers, and conductive leading end
Understand and moves with application voltage to rich metal layer (perhaps scarce metal layer) so as to cause rich metal layer (or scarce metal layer) whole
Ratio in body device becomes smaller, and then increases (reduction) electric conductivity.
Further, the first a-SiO in the present inventionxChange resistance layer is the intrinsic amorphous silica (a- as made from sputtering method
SiOx) film or by cosputtering method be made the nano particle containing Ag, Cu and Al one of which metal amorphous silica (a-
SiOx) film, with a thickness of 30nm~100nm.
Further, the 2nd a-SiO in the present inventionxChange resistance layer is to be made by cosputtering method containing Ag, Cu and Al wherein one
Amorphous silica (the a-SiO of the nano particle of kind metalx) film, with a thickness of 10nm~50nm.
Further, optical signal is TM polarised light in the present invention, and wave-length coverage is 400nm~1100nm.
The another aspect present invention provides a kind of based on above-mentioned a-SiOxThe preparation side of the SPR nerve synapse device of memristor effect
Method, which comprises the steps of:
Step A: the production of memristor:
A1: K9 glass substrate bottom surface deposition metal layer as top electrode；
A2: forming double change resistance layer windows in the bottom surface of the top electrode, then in gluing and patterned top electrode
It is sequentially depositing to obtain a-SiO on bottom surfacexFilm is as the 2nd a-SiOxChange resistance layer and the first a-SiOxChange resistance layer, the first a-
SiOxChange resistance layer is intrinsic a-SiOxFilm or a-SiO containing metal nanoparticlexFilm, the 2nd a-SiOxResistive
Layer is the a-SiO containing metal nanoparticlexFilm, and its metal nanoparticle content is compared with the first a-SiOxChange resistance layer is high, to heavy
Extra " the 2nd a-SiO is removed after the completion of productxChange resistance layer/the first a-SiOxThe double change resistance layers of change resistance layer "；
A3: in the first a-SiOxThe bottom surface of change resistance layer forms hearth electrode pattern, then in gluing and patterned
First a-SiOxDeposited metal layer on change resistance layer removes extra metal layer after the completion of to be deposited, is made and is located at the first a-SiOxResistance
The hearth electrode of change layer bottom surface；So far memristor is made；
Step B: the production of nerve synapse device:
K9 glass prism and the memristor obtained through step A is bonding, so far complete the system of SPR nerve synapse device
It is standby.
Further, the production of memristor can be carried out directly in the bottom surface of K9 glass prism in the present invention, that is, save K9
The bonding operation of glass substrate and K9 glass prism directly makes " hearth electrode/the first a-SiO in the bottom surface of K9 glass prismxResistance
Change layer/the 2nd a-SiOxThe memristor of the vertical four-layer structure of change resistance layer/top electrode ".
Further, hearth electrode, the first a-SiO in the present inventionxChange resistance layer and the 2nd a-SiOxThe deposition of change resistance layer is all made of
Physical vaporous deposition combination photoetching process is realized.
Basic principle of the invention is: K9 glass prism transmitance within the scope of 400nm~1100nm is good, and K9 glass
The refractive index of the relatively double change resistance layers of prism is larger, in this way when the incident light of specific wavelength from the plane of incidence of K9 glass prism with incidence
Angle θsWhen being mapped to the bottom of K9 glass prism or K9 glass substrate, top of the incident light below K9 glass prism or K9 glass substrate
Electrode surface generate evanescent wave, and then with " top electrode/the second-SiOxThe surface plasma of change resistance layer " interface generates resonance
(SPR), so that meeting the incidence angle θsThe optical signal optical signal that is strongly absorbed, and is strongly absorbed reflected from K9 glass
The exit facet output of prism has minimum amplitude.When being biased (electrical modulation) between device top electrode and hearth electrode, the
Two a-SiOxChange resistance layer and the first a-SiOxThe interface of change resistance layer will move under electric field action, so that top electrode and bottom electricity
The dielectric constant of double change resistance layers changes between pole, so that the surface plasma body resonant vibration of incident light and top electrode
(SPR) condition changes therewith, if at this point, optical signal is still according to incidence angle θ as hereinbeforesIt is mapped to K9 glass rib
When mirror or the glass substrate bottom K9, since the SPR condition of incident light and top electrode changes, that is, make above-mentioned appearance most
" extreme value " condition of small smooth amplitude is destroyed, and then weakens plasmon absorption effect, so that being emitted via in K9 glass prism
The enhanced strength for the output optical signal that face detects；At this time just need to change the incidence angle θ of incident lights, so that incident light with
Top electrode meets SPR condition again, to make the optical signal exported after reflection from the exit facet of K9 glass prism tool again
There is the smallest amplitude, particular by the bias condition (electrical modulation) for being applied to voltage between top electrode and hearth electrode is changed, makes
2nd a-SiOxChange resistance layer and the first a-SiOxChange resistance layer interface displacement in the way of gradual change, reversible (positive counter voltage switching) into
Row.For any one the 2nd a-SiOxChange resistance layer and the first a-SiOx(it is weighed interface location corresponding to cynapse between change resistance layer
Weight), meet the angle of light θ of SPR conditionsIt is always unique.Therefore, in a cycle of electrical modulation, pass through bias voltage
Drive the 2nd a-SiOxChange resistance layer and the first a-SiOxThe variation of interface location is, it can be achieved that " the first a-SiO between change resistance layerxResistive
Layer/the 2nd a-SiOxThe resistance value consecutive variations of the double change resistance layers of change resistance layer " or the consecutive variations of synapse weight, so that meeting
The incidence angle θ of SPR conditionsConsequently also change.Obviously, in nerve synapse device proposed by the present invention, synapse weight with
Surface plasma body resonant vibration incidence angle θsThere are one-to-one relationships, and " the electricity of memristor nerve synapse device is achieved based on this
Modulation, light are read ".
Compared with prior art, beneficial effects of the present invention are as follows:
Nerve synapse device of the present invention combines microelectronic element memristor and optical prism, specifically by big refractive index
Element --- K9 glass prism and " top electrode/a-SiOx: the double change resistance layer/hearth electrodes of metal nanoparticle " memristor structure phase coupling
It closes, guarantees that incident light enters the lesser double change resistance layers of refractive index along the larger material of refractive index with this, help avoid glancing incidence,
Reduce light loss, and use surface plasma body resonant vibration (SPR) effect so that in device operation change resistance layer dielectric constant
Change information is read out with optical signal, and then realizes that the light of synapse weight is read.Because optical signal has with roomy, anti-electromagnetism
The strong feature of interference performance, therefore, " electrical modulation, light are read " nerve synapse device proposed by the invention has tradition, and " electricity is adjusted
System, electricity are read " the incomparable advantage of nerve synapse device, because it not only has traditional memristor low energy consumption, non-volatile
Etc. characteristics, but also with light as information carrier progress signal processing band is roomy, anti-electromagnetic interference capability is strong advantage.
Detailed description of the invention
Fig. 1 is 1 diagrammatic side view of device architecture of the invention.
Fig. 2 is 2 diagrammatic top view of device architecture of the invention.
Fig. 3 is device architecture diagrammatic top view of the invention.
Attached meaning marked in the figure are as follows:
1 is hearth electrode, and 2 be the first a-SiOx change resistance layer, and 3 be the 2nd a-SiOx change resistance layer, and 4 be top electrode, and 5 be K9 glass
Substrate, 6 be K9 glass prism.
Specific embodiment
Clear, complete description is carried out to technical solution of the present invention with specific embodiment with reference to the accompanying drawings of the specification, with
Phase is skilled artisans appreciate that the principle of the present invention and characteristic.
Embodiment 1:
A kind of SPR nerve synapse device based on a-SiOx memristor effect, structure include as shown in Figure 1: memristor and
K9 glass prism 6 above the memristor is set, and K9 glass prism 6 is formed by K9 optical glass producing in the present embodiment
Prism, the memristor has " the oneth a-SiO of hearth electrode 1/ from bottom to topxThe 2nd a-SiO of change resistance layer 2/xChange resistance layer 3/ pushes up
The vertical four-layer structure of electrode 4 ", top electrode 4 is the metallic silver Ag, the 2nd a- for being deposited on 6 bottom surface of K9 glass prism in the present embodiment
SiOxChange resistance layer 3 is the a-SiO containing Ag nano particlexFilm, the volume fraction of Ag nano particle are 40%, the first a-
SiOxChange resistance layer 2 is the a-SiO containing Ag nano particlexThe volume fraction of film, Ag nano particle is 5%, and hearth electrode 1 is
It is deposited on the first a-SiOxThe metal platinum Pt of 2 bottom surface of change resistance layer；The refractive index of the K9 glass prism 6 is not less than the 2nd a-
SiOxThe refractive index of change resistance layer 3, so that optical signal through K9 glass prism 6 is incident upon " the first a-SiO under electrical modulationxChange resistance layer 2/
Two a-SiOx3 " double change resistance layers, cause top electrode 4 and the 2nd a-SiOxThe plasma at interface generates resonance between change resistance layer 3.
It has been also provided below above-mentioned based on a-SiOxThe preparation method of the SPR nerve synapse device of memristor effect, specifically
Process flow is as follows:
Step 1: prepare K9 glass prism 6, the length and width of bottom surface are 15mm；
Step 2: washing and drying treatment is carried out to K9 glass prism 6；
Step 3: the metal Ag films with a thickness of 60nm are formed in 6 bottom surface of K9 glass prism using physical vaporous deposition
As top electrode 4；
Step 4: in 4 surface spin coating of top electrode, one layer photoresist, using mask plate through photoetching, development, position is formed
Double change resistance layer windows that central and length and width is 10mm × 10mm in prism bases；Using cosputtering method in gluing and graphical
Top electrode 4 on be sequentially depositing the 2nd a-SiO containing 40% metal silver nano-grain that thickness is 50nmxChange resistance layer 3 and contain
First a-SiO of 5% metal silver nano-grainxChange resistance layer 2；Using stripping technology, remove 4 upper center 10mm of top electrode ×
" the first a-SiO other than 10mmxThe 2nd a-SiO of change resistance layer 2/xThe double change resistance layers of change resistance layer 3 " obtain the top electricity that width is 2.5mm
Pole Windows；
Step 5: in the first a-SiOx2 surface spin coating of change resistance layer, one layer photoresist, using mask plate through photoetching, development etc.
Step forms and is located at the first a-SiOxThe hearth electrode pattern of 2 bottom surface of change resistance layer, the present embodiment use electrode array as shown in Figure 3
Column pattern；Then using cosputtering method in gluing and patterned first a-SiOx2 deposited metal platinum Pt of change resistance layer；Use stripping
Separating process removes excess metal platinum Pt, and hearth electrode 1 is made；So far the preparation of device is completed；
Step 6: finally distinguishing extraction electrode from top electrode 4 and hearth electrode 1, be easy to implement the survey of nerve synapse device function
Examination.
Embodiment 2:
One kind being based on a-SiOxThe SPR nerve synapse device of memristor effect, structure include as shown in Figure 1: memristor and
K9 glass substrate 5 above the memristor is set and the K9 glass prism 6 of 5 top of K9 glass substrate is set, this
K9 glass prism 6 is the prism as made of K9 optical glass producing in embodiment, and K9 glass substrate 5 is also by K9 optical glass
It is process, is bonded between K9 glass substrate 5K9 glass prism 6 preferably with index-matching fluid；The memristor is certainly
It is lower and upper with " the oneth a-SiO of hearth electrode 1/xThe 2nd a-SiO of change resistance layer 2/xThe vertical four-layer structure of 3/ top electrode of change resistance layer 4 ", this
Top electrode 4 is the metallic silver Ag, the 2nd a-SiO for being deposited on 6 bottom surface of crystalline silicon prism in embodimentxChange resistance layer 3 is to receive containing Ag
The a-SiO of rice grainxFilm, the volume fraction of Ag nano particle are 40%, the first a-SiOxChange resistance layer 2 is to contain Ag nanometers
The a-SiO of particlexFilm, the volume fraction of Ag nano particle are 5%, and hearth electrode 1 is to be deposited on the first a-SiOxChange resistance layer 2
The metallic aluminium Al of bottom surface；The refractive index of the K9 glass prism 6 is not less than the 2nd a-SiOxThe refractive index of change resistance layer 3, makes
Under electrical modulation, that is, adjust the voltage being applied between top electrode 4 and hearth electrode 1, optical signal is incident upon " the through K9 glass prism
One a-SiOxChange resistance layer 2 and the 2nd a-SiOxThe double resistance layers of change resistance layer 3 ", cause top electrode 4 and the 2nd a-SiOxThe boundary of change resistance layer 3
The plasma in face generates resonance.
It has been also provided below above-mentioned based on a-SiOxThe preparation method of the SPR nerve synapse device of memristor effect, specifically
Process flow is as follows:
Step 1: preparing the K9 glass substrate 5 of K9 glass prism 6 and same material, and the length and width of 6 bottom surface of K9 glass prism are equal
For 15mm, the length and width of K9 glass substrate 5 are 15mm, with a thickness of 1,1mm；
Step 2: washing and drying treatment is carried out to K9 glass prism 6 and K9 glass substrate 5；
Step 3: the metal Ag films with a thickness of 60nm are formed in 5 bottom surface of K9 glass substrate using physical vaporous deposition
As top electrode 4；
Step 4: in 4 surface spin coating of top electrode, one layer photoresist, using mask plate through photoetching, development, position is formed
Double change resistance layer windows that central and length and width is 10mm × 10mm in prism bases；Using cosputtering method in gluing and graphical
Top electrode 4 on be sequentially depositing the 2nd a-SiO containing 40% metal silver nano-grain that thickness is 50nmxChange resistance layer 3 and contain
First a-SiO of 5% metal silver nano-grainxChange resistance layer 2；Using stripping technology, remove 4 upper center 10mm of top electrode ×
" the first a-SiO other than 10mmxThe 2nd a-SiO of change resistance layer 2/xThe double change resistance layers of change resistance layer 3 " obtain the top electricity that width is 2.5mm
Pole Windows；
Step 5: in the first a-SiOx2 surface spin coating of change resistance layer, one layer photoresist, using mask plate through photoetching, development etc.
Step forms and is located at the first a-SiOxThe hearth electrode pattern of 2 bottom surface of change resistance layer, the present embodiment use electrode array as shown in Figure 3
Column pattern；Then using magnetron sputtering method in gluing and patterned first a-SiOx2 deposited metal aluminium Al of change resistance layer；It uses
Stripping technology removes excess metal aluminium Al, and hearth electrode 1 is made；
Step 6: 6 bottom surface of K9 glass prism and K9 glass substrate 5 not deposited the one of memristor using index-matching fluid
Face coupling, so far completes the preparation of device；
Step 7: finally distinguishing extraction electrode from top electrode 4 and hearth electrode 1, be easy to implement the survey of nerve synapse device function
Examination.
The embodiment of the present invention is elaborated in conjunction with attached drawing above, but the invention is not limited to above-mentioned
Specific embodiment, above-mentioned specific embodiment is only schematical, rather than restrictive, the ordinary skill people of this field
Member under the inspiration of the present invention, can also make many in the case where not departing from present inventive concept and claimed range
Deformation, these belong to protection of the invention.
Claims (10)
1. one kind is based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: including memristor and be arranged in institute
The K9 glass prism above memristor is stated, the memristor has " hearth electrode/the first a-SiO from bottom to topxChange resistance layer/the second
a-SiOxThe refractive index of the vertical four-layer structure of change resistance layer/top electrode ", the K9 glass prism is not less than the 2nd a-SiOxResistance
The refractive index of change layer, so that near infrared light through K9 glass prism is incident upon " the first a-SiO under electrical modulationxChange resistance layer/the 2nd a-
SiOxThe double change resistance layers of change resistance layer ", cause top electrode and the 2nd a-SiOxThe plasma at interface generates resonance between change resistance layer.
2. according to claim 1 a kind of based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: institute
It states and is additionally provided with K9 glass substrate between memristor and K9 glass prism.
3. according to claim 1 a kind of based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: institute
Stating top electrode is metallic silver or gold, with a thickness of 30nm~60nm；The hearth electrode is metal platinum, metallic aluminium or p-type heavy doping
a-SiOxMaterial, with a thickness of 100nm~500nm.
4. according to claim 1 a kind of based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: institute
State the first a-SiOxChange resistance layer is pure a-SiOxFilm；2nd a-SiOxChange resistance layer is the a- containing metal nanoparticle
SiOxFilm；The metal nanoparticle is selected from, Ag, Cu or Al.
5. according to claim 1 a kind of based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: institute
State the first a-SiOxChange resistance layer is the a-SiO containing metal nanoparticlexFilm；2nd a-SiOxChange resistance layer is to contain gold
The a-SiO of metal nano-particlexFilm, and the 2nd a-SiOxMetal nanoparticle content is higher than the first a- in change resistance layer
SiOxMetal nanoparticle content in change resistance layer；The metal nanoparticle is selected from, Ag, Cu or Al.
6. according to claim 6 a kind of based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: institute
State the first a-SiOxThe percentage by volume of metal nanoparticle is not higher than 10% in change resistance layer；2nd a-SiOxChange resistance layer gold
The percentage by volume of metal particles is 20%~45%.
7. a kind of SPR nerve synapse device based on a-Si memristor effect according to claim 1, it is characterised in that: institute
Stating near infrared light is TM polarised light, and wave-length coverage is 400nm~1100nm.
8. according to claim 1 a kind of based on a-SiOxThe SPR nerve synapse device of memristor effect, it is characterised in that: institute
State the first a-SiOxChange resistance layer with a thickness of 30nm~100nm；2nd a-SiOxChange resistance layer with a thickness of 10nm~50nm.
9. a kind of a-SiOxThe preparation method of the SPR nerve synapse device of memristor effect, which comprises the steps of:
Step A: the production of memristor:
A1: K9 glass substrate bottom surface deposition metal layer as top electrode；
A2: double change resistance layer windows are formed in the bottom surface of the top electrode, then in the bottom surface of gluing and patterned top electrode
It is upper successively to deposit a-SiO respectively twicexFilm is successively used as the 2nd a-SiOxChange resistance layer and the first a-SiOxChange resistance layer, described
One a-SiOxChange resistance layer is intrinsic a-SiOxFilm or a-SiO containing metal nanoparticlexFilm, the 2nd a-SiOx
Change resistance layer is the a-SiO containing metal nanoparticlexFilm, and its metal nanoparticle content is compared with the first a-SiOxChange resistance layer is high,
Extra " the 2nd a-SiO is removed after the completion of to be depositedxChange resistance layer/the first a-SiOxThe double change resistance layers of change resistance layer "；
A3: in the first a-SiOxThe bottom surface of change resistance layer forms hearth electrode pattern, then in gluing and patterned first a-
SiOxDeposited metal layer on change resistance layer removes extra metal layer after the completion of to be deposited, is made and is located at the first a-SiOxChange resistance layer bottom
The hearth electrode in face；So far memristor is made；
Step B: the production of nerve synapse device:
K9 glass prism and the memristor obtained through step A is bonding, so far complete the preparation of SPR nerve synapse device.
10. according to claim 1 a kind of based on a-SiOxThe preparation method of the SPR nerve synapse device of memristor effect,
Be characterized in that: the production of the memristor is directly carried out in the bottom surface of crystalline silicon prism.
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