CN109065713B - SPR (surface plasmon resonance) nerve synapse device based on a-Si memristor effect and preparation method thereof - Google Patents
SPR (surface plasmon resonance) nerve synapse device based on a-Si memristor effect and preparation method thereof Download PDFInfo
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Abstract
An SPR (surface plasmon resonance) nerve synapse device based on an a-Si memristor effect and a preparation method thereof belong to the technical field of bionic devices. The method couples the crystalline silicon prism with the memristor structure of 'top electrode/a-Si: metal nanoparticle double-resistance-change layer/bottom electrode', so that optical signals under electrical modulation are transmitted to the double-resistance-change layer through the crystalline silicon prism, and the dielectric constant change information of the resistance-change layer is read by the optical signals in the working process of the device by using the Surface Plasmon Resonance (SPR) effect, thereby realizing the optical reading of the synaptic weight of the device. The electrical modulation and optical reading nerve synapse device provided by the invention has incomparable advantages compared with the traditional electrical modulation and electrical reading nerve synapse device, and has the characteristics of low energy consumption, non-volatility and the like of the traditional memristor, and also has the advantages of large signal processing bandwidth and strong anti-electromagnetic interference capability by taking light as an information carrier.
Description
Technical Field
The invention belongs to the technical field of bionic devices, and particularly relates to an SPR (surface plasmon resonance) neurosynaptic device based on an a-Si memristor effect and a preparation method thereof.
Background
The traditional computer is based on a von neumann architecture, however, in the von neumann architecture, data calling and transmission between an information memory and a processor are connected through a bus, so that the efficiency of information processing is influenced by not only the operation rate and the storage rate of the processor, but also the information transmission capability of the bus, and a so-called von neumann bottleneck is formed. Although the amount of information processed by the human brain is not less than that of a computer, the efficiency is obviously higher and the energy consumption is smaller. Therefore, researchers build the idea of intelligent computers, and hopefully, the computers are enabled to learn the neural network to better simulate the functions of human brains, and the computers which are closer to the human brains are manufactured. Therefore, research and development of a neuro-bionic computer which has human-brain-like self-adaptive capacity and can process various information in parallel is always a research hotspot in the future computer field. Biophysical studies indicate that the completion of brain function is indistinguishable from the synapse, and the plasticity of the synapse is the basis for the brain to simultaneously complete information storage and processing. Therefore, biomimetic simulation of the neural synapses is an important step in artificial neural network research and is also the key to the research of neuromorphic computers and other intelligent terminals.
In the field of intelligent devices and neurosynaptic simulation research, a memristor draws attention of researchers through novel characteristics of the memristor, and the researchers find that according to a theoretical model of the memristor, the resistance value of the memristor can change along with the application of voltage and can remember the changed state, the unique nonlinear transmission characteristic of the memristor has high similarity with the behavior and principle of the neurosynaptic in a biological brain. The similarity enables the memristor to be very suitable for serving as a nerve synapse bionic device, and the memristor is used for constructing a nerve morphology chip and further used for an artificial neural network. In a conventional neuromorphic chip, transistors are the basic unit for constructing biomimetic synapses. However, the transistor-based bionic synapse device is not only bulky, high in energy consumption and poor in learning ability, but also has to reconstruct a circuit to form a new weight. In contrast, memristors are a superior biomimetic synapse device. The memristor is used as a bionic synapse device, so that the memristor is small in size, low in power consumption and high in cycle frequency, the working state (the resistance value after excitation) of the memristor is maintained without energy (namely, the memristor has self-sustaining property), and more importantly, the resistance value of the memristor has continuous adjustability. However, the memristor still has defects, and at present, in a neuromorphic chip constructed based on the memristor (namely, a resistive random access memory ReRAM) at home and abroad, electric signals are used as information media to write and read synaptic weights, namely, an 'electric modulation and electric reading' mode, and the main defects of the working mode are that the signal processing bandwidth is small, and crosstalk is easily generated in the electric signal transmission process.
Disclosure of Invention
In view of the above, the invention provides an optical reading SPR (surface plasmon resonance) neurosynaptic device based on an a-Si memristor effect and a preparation method thereof, aiming at the problems that the signal processing bandwidth is small and crosstalk is easy to occur in the signal transmission process when the conventional memristor-based bionic synapse works. The invention makes the nerve synapse device use the optical signal as the information medium through the reasonable structure design, and reads the synapse weight by using the light intensity to represent the synapse weight, thereby breaking through the bandwidth limitation and the electromagnetic interference of the traditional nerve synapse device signal processing.
In order to achieve the purpose, the invention adopts the following technical scheme:
on one hand, the invention provides an SPR (surface plasmon resonance) nerve synapse device based on an a-Si memristor effect, which is characterized in that: the memristor is provided with a vertical four-layer structure of 'bottom electrode/first a-Si resistance-change layer/second a-Si resistance-change layer/top electrode' from bottom to top, the refractive index of the crystalline silicon prism is not smaller than that of the second a-Si resistance-change layer, so that when near infrared light under electrical modulation is injected into the 'first a-Si resistance-change layer/second a-Si resistance-change layer' double resistance-change layer through the crystalline silicon prism, plasma resonance is generated at the interface between the top electrode and the second a-Si resistance-change layer, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the near infrared light is 800 nm-1700 nm;
when electrical modulation is applied between the top electrode and the bottom electrode of the device, in one period of the electrical modulation, the change of the interface position between the second a-Si resistance-change layer and the first a-Si resistance-change layer is driven by bias voltage, so that the continuous change of the resistance value of the double resistance-change layer or the continuous change of the synaptic weight can be realized, and the functions of electrical modulation and optical reading of the SPR nerve synapse device are further realized.
Further, a crystalline silicon wafer is arranged between the memristor and the crystalline silicon prism.
Furthermore, the top electrode is made of metal silver or gold, and the thickness of the top electrode is 30 nm-60 nm.
Furthermore, the material of the bottom electrode in the invention is selected from metal platinum or metal aluminum, and the thickness of the bottom electrode is 100 nm-500 nm. In a preferred embodiment, the bottom electrode is a circular electrode array, the diameter of the array unit is 5 μm to 300 μm, and the edge distance between adjacent array units is 5 μm to 20 μm.
Further, the first a-Si resistance-change layer can be a pure a-Si (amorphous silicon) film or an a-Si film containing metal nano-particles; the second a-Si resistance change layer is an a-Si thin film containing metal nano-particles, and the content of the metal nano-particles is higher than that of the metal nano-particles of the first a-Si resistance change layer. The metal nanoparticles are selected from Ag, Cu or Al.
Preferably, the volume percentage of the first a-Si resistance change layer metal nanoparticles is not higher than 10%, and the volume percentage of the second a-Si resistance change layer metal particles is 20-45%.
And preparing a metal-rich layer and a metal-deficient layer in the a-Si thin film material for realizing the resistance adjustability of the device. Because the metal-rich layer has higher conductivity than the metal-poor layer, a uniform conductive front end interface exists between the two layers, and the conductive front end moves to the metal-rich layer (or the metal-poor layer) along with the change of the applied voltage, so that the proportion of the metal-rich layer (or the metal-poor layer) in the whole device is changed, and the conductivity is increased (reduced).
Furthermore, the first a-Si resistance changing layer is an intrinsic amorphous silicon (a-Si) film prepared by a sputtering method or an amorphous silicon (a-Si) film containing Ag, Cu and Al metal nano particles prepared by a co-sputtering method, and the thickness of the first a-Si resistance changing layer is 30 nm-100 nm.
Furthermore, the second a-Si resistance change layer is an amorphous silicon (a-Si) film containing Ag, Cu and Al nano-particles, which is prepared by a co-sputtering method, and the thickness of the amorphous silicon (a-Si) film is 10 nm-50 nm.
Furthermore, the near infrared light is TM polarized light, and the wavelength range of the near infrared light is 800 nm-1700 nm.
On the other hand, the invention provides a preparation method of the SPR nerve synapse device based on the a-Si memristive effect, which is characterized by comprising the following steps of:
step A: manufacturing of memristors:
a1: depositing a metal layer on the bottom surface of the crystalline silicon wafer as a top electrode;
a2: forming a double-resistance-change-layer window on the bottom surface of the top electrode, sequentially depositing an a-Si film on the bottom surface of the top electrode which is coated with glue and patterned to serve as a second a-Si resistance-change layer and a first a-Si resistance-change layer, wherein the first a-Si resistance-change layer is an intrinsic a-Si film or an a-Si film containing metal nanoparticles, the second a-Si resistance-change layer is an a-Si film containing metal nanoparticles, the content of the metal nanoparticles is higher than that of the first a-Si resistance-change layer, and after deposition is finished, stripping redundant 'second a-Si resistance-change layer/first a-Si resistance-change layer' double-resistance-change layer;
a3: forming a bottom electrode pattern on the bottom surface of the first a-Si resistance change layer, then depositing a metal layer on the glued and patterned first a-Si resistance change layer, and stripping redundant metal layers after deposition is finished to obtain a bottom electrode positioned on the bottom surface of the first a-Si resistance change layer; thus, a memristor is prepared;
and B: manufacturing a neurosynaptic device:
and D, bonding the crystalline silicon prism with the memristor obtained in the step A, and thus finishing the preparation of the SPR nerve synapse device.
Further, the memristor can be directly manufactured on the bottom surface of the crystalline silicon prism, namely, the bonding operation of the crystalline silicon wafer and the crystalline silicon prism is omitted, and the memristor with the vertical four-layer structure of 'bottom electrode/first a-Si resistance change layer/second a-Si resistance change layer/top electrode' is directly manufactured on the bottom surface of the crystalline silicon prism.
Furthermore, the deposition of the bottom electrode, the first a-Si resistance change layer and the second a-Si resistance change layer is realized by combining a physical vapor deposition method and a photoetching process.
The basic principle of the invention is as follows:the refractive index of the crystalline silicon prism is larger than that of the double resistance change layer, so that when the incident light with specific wavelength is from the incident surface of the crystalline silicon prism at the incident angle thetasWhen the incident light strikes the bottom of the crystalline silicon prism or the crystalline silicon wafer, the incident light generates evanescent waves on the surface of the top electrode below the crystalline silicon prism or the crystalline silicon wafer, and further generates Surface Plasmon Resonance (SPR) at the interface of the top electrode/the second a-Si resistance change layer, so that the incident angle theta is metsIs strongly absorbed and the strongly absorbed optical signal is reflected from the exit face of the crystalline silicon prism and output with a minimum amplitude. When bias voltage (electric modulation) is applied between the top electrode and the bottom electrode of the device, the interface of the second a-Si resistive layer and the first a-Si resistive layer moves under the action of an electric field, so that the dielectric constant of the double resistive layers between the top electrode and the bottom electrode is changed, and the Surface Plasmon Resonance (SPR) condition of incident light and the top electrode is changed accordingly, and at the moment, if an optical signal still follows the same incident angle theta as the above-mentioned incident angle thetasWhen the light is emitted to the bottom of the crystalline silicon prism or the crystalline silicon wafer, due to the fact that the SPR condition of the incident light and the top electrode is changed, namely the condition of 'extreme value' of the minimum light amplitude is destroyed, the plasma absorption effect is further weakened, and the intensity of an output light signal detected on the emergent surface of the crystalline silicon prism is enhanced; at this time, it is necessary to change the incident angle θ of the incident lightsAnd the incident light and the top electrode meet the SPR condition again, so that the optical signal output from the emergent surface of the crystalline silicon prism after reflection has the minimum amplitude, and specifically, the interface of the second a-Si resistance change layer and the first a-Si resistance change layer is pushed in a gradual change and reversible mode (positive and negative voltage switching) by changing the bias condition (electrical modulation) of the voltage applied between the top electrode and the bottom electrode. An incident angle theta of light satisfying the SPR condition for an interface position (which corresponds to a synaptic weight) between any one of the second a-Si resistive layer and the first a-Si resistive layersIs always unique. Therefore, in one period of electric modulation, the change of the interface position between the second a-Si resistance change layer and the first a-Si resistance change layer is driven by the bias voltage, so that the resistance value of the 'first a-Si resistance change layer/second a-Si resistance change layer' double resistance change layer can be continuously realizedVariation or continuous variation of synaptic weights such that the angle of incidence θ satisfies SPR conditionssWith the consequent change. Obviously, in the neurosynaptic device provided by the invention, the synaptic weight and the surface plasmon resonance incidence angle thetasThere is a one-to-one correspondence relationship based on which "electrical modulation, optical readout" of the memristive neurosynaptic device is achieved. The above-mentioned incident angle θ satisfying the SPR condition changes if the wavelength of the incident light is changed, that is, the specific wavelength is changedsThe change can also happen, and the functions of electrical modulation and optical reading of the memristive neurosynaptic device can be realized. The structural arrangement of the device can enable the SPR nerve synapse device based on the a-Si memristor effect to obtain larger-dimension optical reading synapse weight information.
Compared with the prior art, the invention has the following beneficial effects:
the nerve synapse device combines a micro-electronic element memristor and an optical prism, and particularly couples a large-refractive-index element crystalline silicon prism with a top electrode/a-Si/metal nanoparticle double-resistance-change layer/bottom electrode memristor structure, so that incident light is ensured to enter a double-resistance-change layer with a smaller refractive index along a material with a larger refractive index, grazing incidence is avoided, light loss is reduced, and dielectric constant change information of the resistance-change layer in the working process of the device is read by optical signals by applying a Surface Plasmon Resonance (SPR) effect, and further, the optical reading of synapse weight is realized. Because the optical signal has the characteristics of large bandwidth and strong anti-electromagnetic interference capability, the electrical modulation and optical reading nerve synapse device provided by the invention has the advantages which are incomparable to the traditional electrical modulation and electrical reading nerve synapse device, not only has the characteristics of low energy consumption, non-volatility and the like of the traditional memristor, but also has the advantages of large signal processing bandwidth and strong anti-electromagnetic interference capability by taking the optical signal as an information carrier.
Drawings
Fig. 1 is a schematic side view of a device structure 1 of the present invention.
Fig. 2 is a schematic top view of a device structure 2 of the present invention.
Fig. 3 is a schematic top view of a device structure of the present invention.
The reference numerals in the drawings mean:
1 is a bottom electrode, 2 is a first a-Si resistance change layer, 3 is a second a-Si resistance change layer, 4 is a top electrode, 5 is a crystalline silicon wafer, and 6 is a crystalline silicon prism.
Detailed Description
The technical solutions of the present invention will be described in detail and fully with reference to the accompanying drawings and specific embodiments, so that those skilled in the art can understand the principles and features of the present invention.
Example 1:
an SPR (surface plasmon resonance) nerve synapse device based on a-Si memristive effect is structurally shown in figure 1: the memristor comprises a memristor and a crystalline silicon prism 6 arranged above the memristor, wherein the crystalline silicon prism 6 is a triangular prism processed by crystalline silicon, the memristor is provided with a vertical four-layer structure of 'bottom electrode 1/first a-Si resistance change layer 2/second a-Si resistance change layer 3/top electrode 4' from bottom to top, in the embodiment, the top electrode 4 is metal silver Ag deposited on the bottom surface of the crystalline silicon prism 6, the second a-Si resistance change layer 3 is an a-Si film containing Ag nanoparticles, the volume fraction of the Ag nanoparticles is 40%, the first a-Si resistance change layer 2 is an a-Si film containing Ag nanoparticles, the volume fraction of the Ag nanoparticles is 5%, and the top electrode 4 is metal platinum Pt deposited on the bottom surface of the first a-Si resistance change layer 2; the refractive index of the crystalline silicon prism 6 is not less than that of the second a-Si resistance-change layer 3, so that under electrical modulation, namely, when the voltage applied between the top electrode 4 and the bottom electrode 1 is adjusted, an optical signal is emitted to the double resistance-change layers of the first a-Si resistance-change layer 2/the second a-Si resistance-change layer 3 through the crystalline silicon prism, plasma resonance is generated at the interface between the top electrode 4 and the second a-Si resistance-change layer 3, evanescent waves are generated on the surface of the top electrode, and the wavelength range of near infrared light is 800nm to 1700 nm;
when electrical modulation is applied between the top electrode and the bottom electrode of the device, in one period of the electrical modulation, the change of the interface position between the second a-Si resistance-change layer and the first a-Si resistance-change layer is driven by bias voltage, so that the continuous change of the resistance value of the double resistance-change layer or the continuous change of the synaptic weight can be realized, and the functions of electrical modulation and optical reading of the SPR nerve synapse device are further realized.
The following also provides a preparation method of the SPR nerve synapse device based on the a-Si memristive effect, and the specific process flow is as follows:
the method comprises the following steps: preparing a crystalline silicon prism 6, wherein the length and the width of the bottom surface of the crystalline silicon prism are both 15 mm;
step two: cleaning and drying the crystalline silicon prism 6;
step three: forming a metal silver film with the thickness of 60nm on the bottom surface of the crystalline silicon prism 6 by adopting a physical vapor deposition method to serve as a top electrode 4;
spin-coating a layer of photoresist on the surface of the top electrode 4, forming a memristor window which is located in the center of the bottom surface of the prism and has the length of 10mm and the width of × 10mm by utilizing a mask plate through photoetching, developing and other steps, sequentially depositing a second a-Si resistance-change layer 3 which is 50nm thick and contains 40% of metal silver nano particles and a first a-Si resistance-change layer 2 which contains 5% of metal silver nano particles on the top electrode 4 which is coated with glue and patterned by adopting a co-sputtering method, and stripping the double resistance-change layers of the first a-Si resistance-change layer 2/the second a-Si resistance-change layer 3 except for × 10mm from the middle part of the upper part of the top electrode 4 by using a stripping process to obtain a top electrode lead-out window with the width of 2.5 mm;
step five: spin-coating a layer of photoresist on the surface of the first a-Si resistance change layer 2, and performing steps such as photolithography and development by using a mask to form a bottom electrode pattern on the bottom surface of the first a-Si resistance change layer 2, where the embodiment adopts an electrode array pattern as shown in fig. 3; then depositing platinum Pt on the glued and patterned first a-Si resistance change layer 2 by adopting a co-sputtering method; stripping redundant metal platinum Pt by using a stripping process to prepare a bottom electrode 1; thus completing the preparation of the device;
step 6: and finally, electrodes are respectively led out from the top electrode 4 and the bottom electrode 1, so that the function test of the nerve synapse device is convenient to realize.
Example 2:
an SPR (surface plasmon resonance) nerve synapse device based on a-Si memristive effect is structurally shown in figure 2: the memory resistor comprises a crystalline silicon wafer 5, a memory resistor carried by the crystalline silicon wafer and a crystalline silicon prism 6 arranged above the crystalline silicon wafer 5, wherein the crystalline silicon prism 6 is a prism processed by crystalline silicon, the crystalline silicon wafer 5 is also processed by crystalline silicon, and the crystalline silicon wafers 5 and the crystalline silicon prisms 6 are preferably bonded by adopting refractive index matching fluid; the memristor is provided with a vertical four-layer structure of 'a bottom electrode 1/a first a-Si resistance change layer 2/a second a-Si resistance change layer 3/a top electrode 4', in the embodiment, the top electrode 4 is a metal silver Ag deposited on the bottom surface of a crystalline silicon wafer 5, the second a-Si resistance change layer 3 is an a-Si film containing Ag nanoparticles, the volume fraction of the Ag nanoparticles is 40%, the first a-Si resistance change layer 2 is an a-Si film containing Ag nanoparticles, the volume fraction of the Ag nanoparticles is 5%, and the bottom electrode 1 is a metal aluminum Al deposited on the bottom surface of the first a-Si resistance change layer 2; the refractive index of the crystalline silicon prism 6 is not less than that of the second a-Si resistance-change layer 3, so that under electrical modulation, namely voltage applied between the top electrode 4 and the bottom electrode 1 is adjusted, when an optical signal is emitted to the double resistance layers of the first a-Si resistance-change layer 2/the second a-Si resistance-change layer 3 through the crystalline silicon prism, plasma resonance is generated at the interface between the top electrode 4 and the second a-Si resistance-change layer 3, evanescent waves are generated on the surface of the top electrode, and the wavelength range of near infrared light is 800 nm-1700 nm;
when electrical modulation is applied between the top electrode and the bottom electrode of the device, in one period of the electrical modulation, the change of the interface position between the second a-Si resistance-change layer and the first a-Si resistance-change layer is driven by bias voltage, so that the continuous change of the resistance value of the double resistance-change layer or the continuous change of the synaptic weight can be realized, and the functions of electrical modulation and optical reading of the SPR nerve synapse device are further realized.
The following also provides a preparation method of the SPR nerve synapse device based on the a-Si memristive effect, and the specific process flow is as follows:
the method comprises the following steps: preparing a crystalline silicon prism 6 and a crystalline silicon wafer 5 made of the same material, wherein the length and the width of the bottom surface of the crystalline silicon prism 6 are both 15mm, the length and the width of the crystalline silicon wafer 5 are both 15mm, and the thickness of the crystalline silicon wafer 5 is 1.1 mm;
step two: cleaning and drying the crystalline silicon prism 6 and the crystalline silicon wafer 5;
step three: forming a metal silver film with the thickness of 60nm on the bottom surface of the crystalline silicon wafer 5 by adopting a physical vapor deposition method to serve as a top electrode 4;
spin-coating a layer of photoresist on the surface of the top electrode 4, forming a memristor window which is located in the center of the bottom surface of the prism and has the length of 10mm and the width of × 10mm by utilizing a mask plate through photoetching, developing and other steps, sequentially depositing a second a-Si resistance-change layer 3 which is 50nm thick and contains 40% of metal silver nano particles and a first a-Si resistance-change layer 2 which contains 5% of metal silver nano particles on the top electrode 4 which is coated with glue and patterned by adopting a co-sputtering method, and stripping the double resistance-change layers of the first a-Si resistance-change layer 2/the second a-Si resistance-change layer 3 except for × 10mm from the middle part of the upper part of the top electrode 4 by using a stripping process to obtain a top electrode lead-out window with the width of 2.5 mm;
step five: spin-coating a layer of photoresist on the surface of the first a-Si resistance change layer 2, and performing steps such as photolithography and development by using a mask to form a bottom electrode pattern on the bottom surface of the first a-Si resistance change layer 2, where the embodiment adopts an electrode array pattern as shown in fig. 3; then, depositing metal aluminum Al on the glued and patterned first a-Si resistance change layer 2 by adopting a magnetron sputtering method; stripping excessive metal aluminum Al by using a stripping process to prepare a bottom electrode 1;
step 6: coupling the bottom surface of the crystalline silicon prism 6 with one surface of the crystalline silicon wafer 5, on which the memristor is not deposited, by using a refractive index matching fluid, so as to finish the preparation of the device;
and 7: and finally, electrodes are respectively led out from the top electrode 4 and the bottom electrode 1, so that the function test of the nerve synapse device is convenient to realize.
While the present invention has been particularly shown and described with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An SPR nerve synapse device based on a-Si memristive effect, which is characterized in that: the memristor is provided with a vertical four-layer structure of 'bottom electrode/first a-Si resistance-change layer/second a-Si resistance-change layer/top electrode' from bottom to top, the refractive index of the crystalline silicon prism is not smaller than that of the second a-Si resistance-change layer, so that when near infrared light under electrical modulation is injected into the 'first a-Si resistance-change layer/second a-Si resistance-change layer' double resistance-change layer through the crystalline silicon prism, plasma resonance is generated at the interface between the top electrode and the second a-Si resistance-change layer, evanescent waves are generated on the surface of the top electrode, and the wavelength range of the near infrared light is 800 nm-1700 nm;
when electrical modulation is applied between the top electrode and the bottom electrode of the device, in one period of the electrical modulation, the change of the interface position between the second a-Si resistance-change layer and the first a-Si resistance-change layer is driven by bias voltage, so that the continuous change of the resistance value of the double resistance-change layer or the continuous change of the synaptic weight can be realized, and the functions of electrical modulation and optical reading of the SPR nerve synapse device are further realized.
2. The SPR neurosynaptic device based on a-Si memristive effect, according to claim 1, wherein: and a crystalline silicon wafer is arranged between the memristor and the crystalline silicon prism.
3. The SPR neurosynaptic device based on a-Si memristive effect, according to claim 1, wherein: the top electrode is made of metal silver or gold, and the thickness of the top electrode is 30-60 nm; the bottom electrode is made of metal platinum or metal aluminum, and the thickness of the bottom electrode is 100 nm-500 nm.
4. The SPR neurosynaptic device based on a-Si memristive effect, according to claim 1, wherein: the first a-Si resistance change layer is a pure a-Si film or an a-Si film containing metal nano particles; the second a-Si resistance change layer is an a-Si film containing metal nano particles; the metal nanoparticles are selected from Ag, Cu or Al.
5. The SPR neurosynaptic device based on a-Si memristive effect, according to claim 1, wherein: the first a-Si resistance change layer is a pure a-Si film or an a-Si film containing metal nano particles; the second a-Si resistance change layer is an a-Si film containing metal nanoparticles, and the content of the metal nanoparticles in the second a-Si resistance change layer is higher than that of the metal nanoparticles in the first a-Si resistance change layer; the metal nanoparticles are selected from Ag, Cu or Al.
6. The SPR neurosynaptic device based on a-Si memristive effect, according to claim 1, wherein: the volume percentage of the metal nanoparticles in the first a-Si resistance change layer is not higher than 10%; the volume percentage of the second a-Si resistance change layer metal particles is 20-45%.
7. The SPR neurosynaptic device based on a-Si memristive effect, according to claim 1, wherein: the near infrared light is TM polarized light.
8. The SPR neurosynaptic device based on a-Si memristive effect, according to claim 1, wherein: the thickness of the first a-Si resistance change layer is 30 nm-100 nm; the thickness of the second a-Si resistance change layer is 10 nm-50 nm.
9. A preparation method of an SPR (surface plasmon resonance) nerve synapse device based on an a-Si memristive effect is characterized by comprising the following steps:
step A: manufacturing of memristors:
a1: depositing a metal layer on the bottom surface of the crystalline silicon wafer as a top electrode;
a2: forming a double-resistance-change-layer window on the bottom surface of the top electrode, then sequentially and twice depositing an a-Si film on the bottom surface of the top electrode which is coated with glue and patterned to be used as a second a-Si resistance-change layer and a first a-Si resistance-change layer, wherein the first a-Si resistance-change layer is an intrinsic a-Si film or an a-Si film containing metal nano particles, the second a-Si resistance-change layer is an a-Si film containing metal nano particles, the content of the metal nano particles is higher than that of the first a-Si resistance-change layer, and after the deposition is finished, the redundant double-resistance-change layers of the second a-Si resistance-change layer/the first a-Si resistance-change layer are stripped;
a3: forming a bottom electrode pattern on the bottom surface of the first a-Si resistance change layer, then depositing a metal layer on the glued and patterned first a-Si resistance change layer, and stripping redundant metal layers after deposition is finished to obtain a bottom electrode positioned on the bottom surface of the first a-Si resistance change layer; thus, a memristor is prepared;
and B: manufacturing a neurosynaptic device:
and D, bonding the crystalline silicon prism with the memristor obtained in the step A, and thus finishing the preparation of the SPR nerve synapse device.
10. The method for preparing the SPR neurosynaptic device based on the a-Si memristive effect as claimed in claim 9, wherein: the memristor is directly manufactured on the bottom surface of the crystalline silicon prism.
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| CN111769194B (en) * | 2020-06-17 | 2022-05-17 | 北京航空航天大学 | Flexible photoelectric sensing memristor based on sawtooth structure nanowire |
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