CN106981567A - A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor - Google Patents
A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor Download PDFInfo
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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Abstract
The invention discloses a kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor, the artificial synapse device includes Top electrode, bottom electrode and the function material layer between upper and lower electrode, and Top electrode, functional layer material and bottom electrode are collectively forming sandwich structure；Wherein, function material layer is made up of the material with photoconductive effect, and bottom electrode is transparent conductive electrode；Electric signal is inputted by Top electrode, bottom electrode, and optical signal is then inputted by transparent conductive electrode；This artificial synapse device that the present invention is provided introduces light as other end adjustment signal outside electric signal, and the regulation and control end of two end artificial synapse devices is expanded to three ends；This one end of addition causes artificial synapse device to occur change in resistance under extraneous optical excitation signal, regulated and controled by the selection to optical excitation signal intensity, frequency and optical pulse time, the artificial synapse device can be configured to corresponding multiple resistance states, a variety of synaptic plasticity functions are accordingly realized.
Description
Technical field
The invention belongs to artificial neural network technology field, more particularly, to a kind of based on photoelectric coupling memristor
Artificial synapse device and its modulator approach.
Background technology
Existing von neumann machine framework separates the storage of data with calculating, leads between memory and processor
Cross transfer bus to carry out data transmission, its transmission speed can limit computer speed significantly.Under the big data epoch, magnanimity is counted in real time
According to large-scale parallel computing be the challenge of existing computing architecture band.And in people's cerebral nervous system, calculate be with storage can be with
Carry out simultaneously.Therefore, the research that class brain is calculated, which is expected to turn into, breaks through a kind of maximally effective scheme of von Neumann bottleneck.In human brain
In nervous system, the processing of information and memory cell are bound together, and memory is carried out parallel with calculating, each neuron
With cynapse all in synchronously storage and processing information.The signal that environmental stimuli is produced is inputted to be transmitted in nervous system, is finally existed
The storage of information and handling perfect is combined together during output response.And learning and memory is used as human brain nerveous system
The most basic cognitive activities of system, its neurobiological basis comes from the plasticity of nerve synapse.Synaptic plasticity is to refer to cynapse
The ability that weight occurs to strengthen and weaken with nervous activity current potential.Iuntercellular double pulses laser (paired-pulse
Facilitation, PPF), long term potentiation (long-term potentiation, LTP), long-term depression (long-term
Depression, LTD), pulse sequence rely on synaptic plasticity (spike-timing-dependent plasticity,
STDP it is all nerve that), pulse frequency, which relies on synaptic plasticity (spike-rate-dependent plasticity, SRDP) etc.,
The common cynapse deformability characteristics of first cynapse.And cognitive process is namely based on the one of neuron and cynapse micro kinetics in itself
Plant macroscopic behavior, such as associative learning (associative learning), competition learning (competitive learning)
These most basic synaptic plasticities are all based on etc. study mechanism and are realized.Therefore it is directed to various prominent in artificial synapse device
The simulated implementation for touching plasticity is one of development most basic also most important research direction of artificial neural network.
Memristor is as a kind of novel information device, and the information that can organically blend storage is realized at class brain information with calculating
Reason, it is considered to be fundamentally break through the key foundation unit of von Neumann bottleneck.And artificial synapse device is ground at present
Study carefully, all focus on two distal process tentaculum parts；This not only constrains the modification scope and tune of single cynapse device to a certain extent
Precision is controlled, be also limit cross interconnected between nerve synapse device in artificial neural network.Therefore, multiterminal artificial synapse device
Research have very important importance in the development of artificial neural network.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of based on photoelectric coupling memristor
Artificial synapse device and its modulator approach；Regulate and control end by introducing optical signal in pure electricity regulation and control memristor artificial synapse device, it is real
The now coupling of light, electric signal to artificial synapse device performance regulates and controls, so as to widen the application and tune of artificial synapse device
Save precision.
To achieve the above object, according to one aspect of the present invention, there is provided a kind of people based on photoelectric coupling memristor
Work cynapse device, including Top electrode, bottom electrode and the function material layer between upper and lower electrode, Top electrode, functional layer material
Material and bottom electrode are collectively forming sandwich structure；
Wherein, function material layer is made up of the material with photoconductive effect, and bottom electrode is transparent conductive electrode；Electric signal
Inputted by Top electrode, bottom electrode, optical signal is then inputted by transparent conductive electrode.
It is preferred that, the above-mentioned artificial synapse device based on photoelectric coupling memristor, the material of its function material layer is organic
Or inorganic perovskite, inorganic oxide or inorganic chalcogenide compound.
It is preferred that, the above-mentioned artificial synapse device based on photoelectric coupling memristor, the material of its function material layer is
CH3NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3-xIx、CH3NH3PbBr3-xIx、NH4PbI3、NH2CHNH2PbI3、
CH3NH3SnI3、Al2O3、ZnO/Nb-SrTiO3、InGaZnO、CdS、CdSe、PbS、GaAs、InSb、Cu2ZnSnSe4、Cu2ZnSn
(S,Se)4、MoS2、WS2, BN, black phosphorus or graphene.
It is preferred that, the above-mentioned artificial synapse device based on photoelectric coupling memristor, its bottom electrode be use comprising ITO or
The transparent conductive electrode that FTO transparent conducting glass is made.
It is preferred that, the above-mentioned artificial synapse device based on photoelectric coupling memristor, its upper electrode material be Au, Cu, Ti,
Zn, Al, Ag or Ni metal material.
It is further preferred that the above-mentioned artificial synapse device based on photoelectric coupling memristor, the crystallization of its function material layer
State can use monocrystalline, polycrystalline or amorphous according to preparation method；The thickness of the crystalline state of its function material layer, thickness and Top electrode
Spend the parameter that can regulate and control as performance indications.
The above-mentioned artificial synapse device that the present invention is provided as it is a kind of can three ends input device, possess two end artificial synapses
The electrology characteristic of device, under extraneous electrical stimuli signal, with multistage resistance state；The artificial synapse device can be matched somebody with somebody by regulating and controlling
Corresponding multiple stable resistance states are put to realize the synaptic plasticity function such as PPF, STP, LTP, STDP；And due to its functional layer tool
There is photogenic voltage characteristic, the 3rd end light can be introduced as adjustment signal, optical signal can individually or auxiliary electric signal is to artificial synapse
The synaptic plasticity function of device is regulated and controled.
To realize the object of the invention, photoelectric coupling memristor is based on there is provided one kind according to another aspect of the present invention
Synaptic plasticity of the artificial synapse device under electric signal modulator approach, electric signal inputs from upper and lower two electrodes, light letter
Number inputted by the bottom electrode of electrically conducting transparent, specifically include following steps：
(1) the Top electrode input direct-current level of the metal in the artificial synapse device based on photoelectric coupling memristor is passed through
VF, transparent bottom electrode is grounded, electric initialization is carried out to the artificial synapse device by adjusting limitation electric current, will manually be dashed forward
The resistance states of tentaculum part are changed into compared with the adjustable resistance state of low level by initial resistance states；
Wherein, limitation electric current is to apply overload protection electric current when encouraging to device；When the bias voltage production applied
When raw electric current is more than limitation electric current, the size of current for flowing through device is set to limitation electric current automatically；
(2) the Top electrode input write-in level V of the metal in above-mentioned artificial synapse device is passed throughset, by transparent lower electricity
Pole is grounded, by the device from high-impedance state RHRegulate and control to low resistance state RL；
By in transparent bottom electrode input erasing level Vreset, the Top electrode of metal is grounded, by the device from low-resistance
State RLRegulate and control to high-impedance state RH；
The device is in high-impedance state RHWhen, conductance is very low, and electric current handling capacity is small, can use in a state in which under it is artificial
Cynapse device is to simulate that biological synapse bonding strength is very weak, synapse weight very low situation；
The device is in low resistance state RLWhen, conductance is very high, and electric current handling capacity is strong, can use in a state in which under it is artificial
Cynapse device is to simulate that biological synapse bonding strength is very strong, synapse weight very big situation；
(3) the write-in threshold value pulse P of the Top electrode entering apparatus of the metal in above-mentioned artificial synapse device is passed throughset, will
Transparent bottom electrode ground connection, by artificial synapse device from high-impedance state RHRegulate and control to low resistance state RL；
By in transparent bottom electrode input erasing threshold value pulse Preset, the Top electrode of metal is grounded, by artificial synapse
Device is from low resistance state RLRegulate and control to high-impedance state RH；
By adding amplitude or pulsewidth to be less than threshold value pulse (P in an electrode of above-mentioned artificial synapse devicesetOr Preset)
Pulse signal PM, another electrode is grounded, artificial synapse device is regulated and controled to middle resistance state RM1；By changing pulse signal
PMPulse parameter amplitude and pulsewidth size, obtain different middle resistance state RMX；
When the device is in different middle resistance states, conductance is different, and electric current handling capacity is different, can use in this
Artificial synapse device under state simulates the bonding strength that biological synapse is different, you can to simulate different synapse weights；When
Artificial synapse device is adjusted to low-resistance, conductance rise from high resistant, shows the synapse weight increase of the artificial synapse device；And work as
Device from low-resistance be adjusted to high resistant when, conductance reduction, show the artificial synapse device synapse weight reduce；
(4) when above-mentioned artificial synapse device is in high resistant, and pulse signal PM1Fail by device from high-impedance state regulate and control to
Some stable middle resistance state, but from this middle resistance state volatibility ground high-impedance state that fails back, artificial synapse device realization
STP functions；
When the device is in high resistant, pulse signal PM2Device is regulated and controled to some middle resistance state from high-impedance state, device from this
In the middle of the resistance that fails back to middle resistance state volatibility is stable less than some non-volatile of high-impedance state during resistance state, the artificial synapse device
Part realizes LTP functions；
When the device is in high-impedance state, continuously apply two identical pulse signal P on the same electrode of deviceM3,
As the ratio between current amplitude A caused by the stimulation of pulse signal twice2/A1During more than 1, the device realizes PPF functions；
When the Top electrode of the metal in the device applies pulse train PS1, pulse train is applied in its transparent bottom electrode
PS2, by changing pulse train PS1With PS2Time interval δ t so that the knots modification of synapse weight also changes therewith；By adjusting
The parameter of whole pulse sequence, when synapse weight changes and changed with δ t, realizes STDP functions；
(5) level V is read by the Top electrode input of the metal in above-mentioned cynapse deviceread, transparent bottom electrode is connect
Ground, to realize the reading of artificial synapse device weight.
To realize the object of the invention, photoelectric coupling memristor is based on there is provided one kind according to another aspect of the present invention
Synaptic plasticity of the artificial synapse device under optical signal modulator approach, comprise the following steps：
(1) the Top electrode input direct-current high level V of the metal in above-mentioned cynapse device is passed throughF, by transparent bottom electrode
Ground connection, by adjusting limitation electric current so that the resistance states of the artificial synapse device are changed into light arteries and veins by initial resistivity state
Rush adjustable resistance state；
Limitation electric current therein is to apply overload protection electric current when encouraging to device；
(2) in the transparent vertical input optical pulse signal L of bottom electrodeM, by adjusting light pulse signal LMIntensity, frequency
And pulsewidth so that the artificial synapse device reaches different stable middle resistance state RMX, so as to simulate the difference in biological synapse
Weight；X is natural number；
When the device is in high-impedance state, and the light pulse signal L appliedM1Fail from high-impedance state to regulate and control device to some
Stable middle resistance state but from this middle resistance state volatibility ground high-impedance state that fails back, the artificial synapse device realizes STP work(
Energy；
When the device is in high-impedance state, light pulse signal LM2Device is regulated and controled to some middle resistance state, device from high-impedance state
In the middle of the resistance that failed back from the middle resistance state volatibility is stable less than some non-volatile of high-impedance state during resistance state, this is artificial prominent
Tentaculum part realizes LTP functions；
When the device is in high-impedance state, continuously apply two identical light pulse signal LM3, when light pulse twice is stimulated
The ratio between caused current amplitude A2/A1During more than 1, the artificial synapse device realizes PPF functions；
(3) level V is read by the Top electrode input of the metal in described photoelectric coupling memristor artificial synapse deviceread,
It is grounded in transparent bottom electrode, to realize the reading of artificial synapse device weight.
To realize the object of the invention, photoelectric coupling memristor is based on there is provided one kind according to another aspect of the present invention
Synapse weight modulator approach of the artificial synapse device under electric signal and optical signal coupling, comprise the following steps：
(1) the Top electrode input direct-current high level V of the metal in described photoelectric coupling artificial synapse device is passed throughF, will
Transparent bottom electrode ground connection, by adjusting limitation electric current so that the resistance states of the artificial synapse device are by initial resistance
State is changed into the adjustable resistance state of photoelectric coupling signal；
(2) erasing threshold value pulse signal P is added in the transparent bottom electrode of the artificial synapse devicereset, Top electrode is connect
Ground, can regulate and control artificial synapse device to high-impedance state RH；Apply pulse P in the Top electrode of metalM1, transparent bottom electrode is connect
Ground, the resistive of device with occurring a volatibility from high-impedance state to low resistance state, resulting devices resistance returns to high-impedance state, and resistance does not have
Change, now, device realizes STP functions；
Make land used contrast as photoelectric coupling, while transparent bottom electrode section applies optical signal, in the upper electricity of metal
Pole applies same pulse PM1, change intensity, frequency and the pulsewidth of optical signal, electric pulse PM1Device is regulated and controled to non-volatile
Stable middle resistance state RMX(X is 1,2,3 ...)；Now, optical signal auxiliary electric impulse signal regulates and controls device and is changed into from STP study
LTP learns；
(3) erasing threshold value pulse signal P is added in the transparent bottom electrode of the artificial synapse devicereset, Top electrode is connect
Ground, can regulate and control artificial synapse device to high-impedance state RH；Apply pulse P in the Top electrode of metalM1, transparent bottom electrode is connect
Ground, device resistance is adjusted to non-volatile middle resistance state RM1, now, device realizes LTP functions；Apply in transparent bottom electrode
Optical signal, the pulse P applied in the Top electrode of metalM1, change intensity, frequency and the pulsewidth of optical signal, electric pulse PM1By device
Regulate and control to the middle resistance state R of non-volatile stabilizationM2, RM2Less than RM1, now, optical signal auxiliary electric impulse signal regulation and control device is real
The LTP study of existing deeper degree；
(4) level V is read by the Top electrode input of the metal in described photoelectric coupling artificial synapse deviceread, saturating
Bright bottom electrode access zero level, to realize the reading of artificial synapse device resistance state.
Preferably, in above-mentioned modulator approach, RH＞ RMX＞ RL, PM<Pset, PM<Preset；Wherein, RHFor the resistance of high-impedance state,
RMXFor the resistance of middle resistance state, RLFor the resistance of low resistance state；PMFor the amplitude for the pulse for being applied to artificial synapse device electrode,
PsetFor the amplitude of threshold value pulse, PresetTo wipe the amplitude of threshold value pulse signal.
Preferably, in above-mentioned modulator approach, device is placed in different resistance states tune by applying limitation electric current to device
Adjusting range, the scope of the limitation electric current is 1nA~100mA.
In general, the contemplated above technical scheme of the present invention, compared with existing artificial synapse device, has with following
Beneficial effect：
The above-mentioned artificial synapse device that the present invention is provided, using the memristor material with photovoltaic effect as artificial prominent
Tentaculum part functional layer material, introduces light as other end adjustment signal, by the tune of two end artificial synapse devices outside electric signal
Control end is expanded to three ends；This one end of addition causes the artificial synapse device that resistance change can occur under extraneous optical excitation signal
Change, regulated and controled by the selection to optical excitation signal intensity, frequency and optical pulse time, the artificial synapse device can be configured
To corresponding multiple resistance states, single artificial synapse device on a large scale, is accurately regulated and controled so as to realize, accordingly realize PPF,
STP, LTP synaptic plasticity function, and then realize the cross interconnected of artificial synapse device in extensive artificial neural network.
Brief description of the drawings
Fig. 1 is the structural representation for the artificial synapse device based on photoelectric coupling memristor that embodiment is provided；
Fig. 2 is the pumping signal input signal for the artificial synapse device based on photoelectric coupling memristor that embodiment is provided
Figure；
Fig. 3 is the current-voltage characteristic curve for the artificial synapse device based on photoelectric coupling memristor that embodiment is provided
Figure；
Fig. 4 is the multistage stable resistance state regulation and control for the artificial synapse device based on photoelectric coupling memristor that embodiment is provided
Figure；
Fig. 5 is that the artificial synapse device based on photoelectric coupling memristor that embodiment is provided turns under regulation and control from STP study
Fade to the curve synoptic diagram of LTP study；
Fig. 6 is that the artificial synapse device based on photoelectric coupling memristor that embodiment is provided carries out deeper degree under regulation and control
LTP study curve synoptic diagram.
In all of the figs, identical reference is used for representing identical element or structure, wherein：101- Top electrodes,
102- function material layers, 103- bottom electrodes.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.In addition, invention described below each
When only applying electric signal at electricity input 1,2 ends of electricity input, institute in embodiment can be opened up by changing artificial synapse device
As long as the technical characteristic being related to does not constitute conflict and can be just mutually combined each other.
It is the structural representation for the artificial synapse device based on photoelectric coupling memristor that embodiment is provided, tool shown in Fig. 1
Body includes Top electrode 101, bottom electrode 103 and the function material layer 102 between upper/lower electrode, Top electrode, functional layer material
Material and bottom electrode are collectively forming sandwich structure.
In the present embodiment, function material layer is made up of the material with photoconductive effect, including organic, inorganic perovskite,
Inorganic oxide, inorganic chalcogenide compound and some other two-dimensional material, these two-dimensional materials include but is not limited to
CH3NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3-xIx、CH3NH3PbBr3-xIx、NH4PbI3、NH2CHNH2PbI3、
CH3NH3SnI3、Al2O3、ZnO/Nb-SrTiO3、InGaZnO、CdS、CdSe、PbS、GaAs、InSb、Cu2ZnSnSe4、Cu2ZnSn
(S,Se)4、MoS2、WS2, BN, the light-sensitive material such as black phosphorus or graphene；Bottom electrode is using ITO or FTO transparent conducting glass
Transparency electrode, Top electrode uses Au, Cu, Ti, Zn, Al, Ag or Ni metal material.
It is the excitation of the artificial synapse device based on photoelectric coupling memristor of embodiment offer operationally shown in Fig. 2
Signal inputs schematic diagram, and electric signal is inputted by Top electrode and bottom electrode, and external electrical inputs the upper of 1 end connection artificial synapse device
Electrode, external electrical inputs the bottom electrode that 2 ends couple artificial synapse device, and bottom electrode of the optical signal then from electrically conducting transparent is vertically defeated
Enter, thus, this artificial synapse device based on photoelectric coupling memristor realizes the input of three ends.
The electrology characteristic of existing two ends artificial synapse device is including more shown in eight word loop lines and Fig. 4 as shown in Figure 3
Resistance state roll-off characteristic；The synaptic plasticity work(such as PPF, STP, LTP, STDP can be realized under electric signal control using this characteristic
Energy.
And for above-mentioned artificial synapse device provided by the present invention, when it is from 103 vertical input optical signal of bottom electrode,
It can be aided in by optical signal or cooperate with electric signal to regulate and control the memristor artificial synapse device, also can be individually right by optical signal
The memristor artificial synapse device is regulated and controled.
Be specifically described with reference to embodiments the present embodiment offer artificial synapse device single electric signal, individually
Modulator approach optical signal and light, electric signal apply simultaneously when.
The artificial synapse device of this photoelectric coupling memristor provided for embodiment, it is prominent under single electric signal
Touch weight modulator approach specific as follows：
(1) electricity initialization device resistance；In the input direct-current high level V of electrode of metal 101 of deviceF, under transparent
The connecting to neutral level of electrode 103 so that the resistance states of artificial synapse device are by initial resistance states Rin1It is changed into after initialization
Resistance value Rin2, the resistance value R after electrically operatedin2Under, the resistance of device can be by than VFLow DC level is adjusted；
(2) device resistance is regulated and controled using DC signal；In the input write-in level of electrode of metal 101 V of deviceset, will
The transparent connecting to neutral level of bottom electrode 103, by artificial synapse device from high-impedance state RHRegulate and control to low resistance state RL；
By in the transparent input erasing level of bottom electrode 103 Vreset, will be artificial by the connecting to neutral level of electrode of metal 101
Cynapse device is from low resistance state RLRegulate and control to high-impedance state RH；The corresponding I-V diagram of the process is as shown in Figure 3.When device is in high-impedance state RH
When, the conductance of device is very low, and electric current is very weak by the ability of device, can with a state in which under artificial synapse device come
Simulate that biological synapse two ends bonding strength is very weak, synapse weight very low situation；When device is in low resistance state RHWhen, the electricity of device
Lead it is very high, electric current by the very capable of device, can with a state in which under artificial synapse device it is biological prominent to simulate
Touch that two ends bonding strength is very strong, synapse weight very big situation；
(3) device resistance is regulated and controled using electric impulse signal；Apply write-in threshold value arteries and veins in the electrode of metal 101 of cynapse device
Rush Pset, can be by device from high-impedance state R in the transparent connecting to neutral level pulse of bottom electrode 103HRegulate and control to low resistance state RL；
In transparent bottom electrode input erasing threshold value pulse Preset, can be by artificial synapse device in electrode of metal connecting to neutral level
Part is from low resistance state RLRegulate and control to high-impedance state RH；
Amplitude or pulsewidth is added to be less than threshold value pulse (P in an electrode of devicesetOr Preset) pulse signal PM, will be another
One electrode ground connection, can regulate and control artificial synapse device to middle resistance state RM1, by changing pulse signal VPPulse parameter
The size of amplitude and pulsewidth, can obtain different middle resistance state RMX(X is 1,2,3 ...), as shown in Figure 4；Device is in different centres
During resistance state, conductance is different, and the handling capacity of electric current is also different, it is possible thereby to simulate the different bonding strength of biological synapse, you can
To simulate different synapse weights；
(4) device synaptic plasticity is regulated and controled by electric signal；The electrode of metal 101 of this artificial synapse device is connect
Ground, applies erasing threshold value pulse P at the transparent end of bottom electrode 103reset, device is in high-impedance state；Transparent bottom electrode 103 is terminated
Ground, pulse signal P is applied at the end of electrode of metal 101M, device is adjusted to some middle resistance state from high-impedance state, and is declined quickly
When retreating to initial high-impedance state, the artificial synapse device realizes STP functions；
The end of electrode of metal 101 of the artificial synapse device is grounded, applies erasing threshold value arteries and veins at the transparent end of bottom electrode 103
Rush Preset, device is in high-impedance state；Transparent bottom electrode 103 is grounded, pulse signal P is applied at the end of electrode of metal 101M,
Artificial synapse device from high-impedance state be adjusted to some stable middle resistance state when, the artificial synapse device realizes LTP functions；
The electrode of metal 101 of the artificial synapse device is grounded, applies erasing threshold value pulse at the transparent end of bottom electrode 103
Preset, device is in high-impedance state；By the transparent end of bottom electrode 103 ground connection of device, continuously applied at the end of electrode of metal 101 of device
Plus two identical pulse signal PM, pulse signal P twiceMStimulation caused by the ratio between current amplitude A2/A1During more than 1, device
Realize PPF functions；
Apply pulse train P in the electrode of metal 101 of the artificial synapse device1, pulse is applied in its transparent bottom electrode
Sequence P2, change pulse train P1With P2Time interval δ t, the knots modification of synapse weight also changes therewith, adjusts pulse train
Parameter, when the knots modification of synapse weight changes with δ t and when changing, device realizes STDP functions；
(5) reading of synapse weight；Level V is read in the input direct-current of electrode of metal 101 of the artificial synapse deviceread,
In its transparent access of bottom electrode 103 zero level, the electric current I for flowing through device is readread, as synapse weight, so as to realize artificial
The reading of cynapse device weight.
The artificial synapse device of this photoelectric coupling memristor provided for embodiment, it is prominent under single optical signal
Touch weight modulator approach specific as follows：
(1) electricity initialization artificial synapse device resistance；In the input direct-current of Top electrode 101 of the metal of the artificial synapse device
High level VF, in the transparent connecting to neutral level of bottom electrode 103 so that the resistance states of the device are by initial resistance states Rin1Turn
It is changed into the resistance value R after initializationin2, the resistance value R after electrically operatedin2Under, the resistance of device can be by than VFLow direct current
It is flat to be adjusted；
(2) synaptic plasticity is adjusted using optical signal；In the transparent vertical input optical pulse signal of bottom electrode 103
LM, by adjusting light pulse signal LMIntensity, frequency and pulsewidth so that cynapse device reach it is different it is stable in the middle of resistance state RMX
Different weights in (X is 1,2,3 ...), simulation biological synapse；
The electrode of metal 101 of the device is grounded, erasing threshold value pulse P is applied in transparent bottom electrodereset, make the device
Part is in high-impedance state, as regulation light pulse signal LMFail by device from high-impedance state regulate and control to some stable middle resistance state when,
The artificial synapse device realizes STP functions；
The electrode of metal 101 of the device is grounded, erasing threshold value pulse P is applied in transparent bottom electrodereset, make the device
Part is in high-impedance state, as light pulse signal LMBy device from high-impedance state regulate and control to some stable middle resistance state when, this is manually dashed forward
Tentaculum part realizes LTP functions；
The electrode of metal 101 of the device is grounded, erasing threshold value pulse P is applied in transparent bottom electrodereset, make the device
Part is in high-impedance state, continuous to apply two identical light pulse signal L toward bottom electrodeM, when light pulse twice stimulates caused electricity
Flow the ratio between amplitude A2/A1During more than 1, device realizes PPF functions；
(3) reading of synapse weight；Level V is read in the input direct-current of electrode of metal 101 of the deviceread, transparent
Bottom electrode 103 accesses zero level, reads the electric current I for flowing through deviceread, as synapse weight, so as to realize artificial synapse device
The reading of weight.
The artificial synapse device of this photoelectric coupling memristor provided for embodiment, under electric signal and optical signal
Synapse weight regulates and controls method：
(1) electricity initialization device resistance；In the input direct-current high level of Top electrode 101 of the metal of the artificial synapse device
VF, in the transparent connecting to neutral level of bottom electrode 103 so that the resistance states of the device are by initial resistivity state Rin1It is changed into initial
Resistance value R after changein2；In resistance value Rin2Under, the resistance of the device can be by than VFLow DC level is adjusted；
(2) regulation and control individually using electric signal to the artificial synapse device；In any one electricity of the artificial synapse device
Pole applies pulse signal VP, in another electrode connecting to neutral level pulse, device is regulated and controled to resistance state RM1；By changing pulse signal VP
Pulse parameter amplitude and pulsewidth size, obtain different middle resistance state RMX(X is 1,2,3 ...)；
(3) the artificial synapse device is aided in be converted to LTP study from STP study under electric signal operation using optical signal；
Apply erasing threshold value pulse signal P in the transparent bottom electrode of the artificial synapse devicereset, the Top electrode of metal is grounded, will
The artificial synapse device regulates and controls to high-impedance state RH；
Apply pulse P in the Top electrode of metalM1, transparent bottom electrode is grounded, the device resistance does not change, device is real
Existing STP functions；
Apply optical signal in transparent bottom electrode, pulse P is applied in the Top electrode of metalM1, and change optical signal intensity,
Frequency and pulsewidth, electric pulse PM1The device is regulated and controled to stable middle resistance state RMX(X is 1,2,3 ...)；Now, optical signal is auxiliary
Electric impulse signal operated device is helped to be changed into LTP study from STP study；Shown in Fig. 5, be embodiment provide based on photoelectric coupling
The artificial synapse device of memristor is learnt to be converted to the curve synoptic diagram of LTP study in the case where there is light auxiliarily to regulate and control by STP；
(4) LTP for aiding in the device to carry out deeper degree under electric signal operation by optical signal learns；By in the people
The transparent bottom electrode of work cynapse device applies erasing threshold value pulse signal Preset, the Top electrode of metal is grounded, will manually be dashed forward
Tentaculum part regulates and controls to high-impedance state RH；
Pulse P is applied by the Top electrode in its metalM1, transparent bottom electrode is grounded, by the device resistance regulate and control to
Middle resistance state RM1, now, the device realizes LTP functions；
Apply optical signal in transparent bottom electrode, and apply pulse P in the Top electrode of metalM1, and change the strong of optical signal
Degree, frequency and pulsewidth, electric pulse PM1Device is regulated and controled to stable middle resistance state RM2, RM2More than RM1, now, optical signal auxiliary
Electric impulse signal regulation and control device realizes the LTP study of deeper degree；Shown in Fig. 6, then be embodiment provide based on photoelectric coupling
The artificial synapse device of memristor carries out the curve synoptic diagram of the LTP study of deeper degree in the case where there is light auxiliarily to regulate and control.
(5) reading of synapse weight；Level V is read in the input direct-current of electrode of metal 101 of the artificial synapse deviceread,
Zero level is accessed in transparent bottom electrode 103, the electric current I for flowing through device is readread, as synapse weight, so as to realize artificial
The reading of cynapse device weight.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (10)
1. a kind of artificial synapse device based on photoelectric coupling memristor, it is characterised in that including Top electrode, bottom electrode and position
Function material layer between the upper and lower electrode；
The function material layer is made up of the material with photoconductive effect, and Top electrode is that metal electrode, bottom electrode are transparent lead
The electrode of electricity；Electric signal is inputted by the Top electrode, bottom electrode, and optical signal is inputted by bottom electrode.
2. artificial synapse device as claimed in claim 1, it is characterised in that the material of the function material layer is organic calcium titanium
Ore deposit, inorganic perovskite, inorganic oxide or inorganic chalcogenide compound.
3. artificial synapse device as claimed in claim 1 or 2, it is characterised in that the material of the function material layer is
CH3NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3-xIx、CH3NH3PbBr3-xIx、NH4PbI3、NH2CHNH2PbI3、
CH3NH3SnI3、Al2O3、ZnO/Nb-SrTiO3、InGaZnO、CdS、CdSe、PbS、GaAs、InSb、Cu2ZnSnSe4、Cu2ZnSn
(S,Se)4、MoS2、WS2, BN, black phosphorus or graphene.
4. artificial synapse device as claimed in claim 1 or 2, it is characterised in that the crystalline state of the function material layer is
Monocrystalline, polycrystalline or amorphous.
5. artificial synapse device as claimed in claim 1 or 2, it is characterised in that the bottom electrode be use comprising ITO or
The transparent conductive electrode that FTO transparent conducting glass is made.
6. artificial synapse device as claimed in claim 1 or 2, it is characterised in that the upper electrode material be Au, Cu, Ti,
Zn, Al, Ag or Ni metal material.
7. a kind of modulator approach of synaptic plasticity of the artificial synapse device under electric signal as described in claim 1~6, outside
Portion's electric signal is inputted from upper and lower two electrodes, and optical signal is inputted by bottom electrode；It is characterised in that it includes following steps：
(1) in the Top electrode input direct-current level V of the artificial synapse deviceF, its bottom electrode is grounded, by adjusting limitation electricity
Stream carries out electric initialization to the artificial synapse device, the resistance states of artificial synapse device is changed by initial resistance states
For the adjustable resistance state of low level；
(2) the Top electrode input write-in level V in the artificial synapse device is passed throughset, by the artificial synapse device from high resistant
State RHRegulate and control to low resistance state RL；
By in bottom electrode input erasing level Vreset, Top electrode is grounded, by the artificial synapse device from low resistance state RLAdjust
Control to high-impedance state RH；
The artificial synapse device is in high-impedance state RHWhen, conductance is very low, and electric current handling capacity is small, using in a state in which under
Artificial synapse device is to simulate that biological synapse bonding strength is very weak, synapse weight very low situation；
The artificial synapse device is in low resistance state RLWhen, conductance is very high, and electric current handling capacity is strong, using in a state in which under
Artificial synapse device is to simulate that biological synapse bonding strength is very strong, synapse weight very big situation；
(3) the Top electrode input write-in threshold value pulse P in the artificial synapse device is passed throughset, its bottom electrode is grounded, by people
Work cynapse device is from high-impedance state RHRegulate and control to low resistance state RL；
By in bottom electrode input erasing threshold value pulse Preset, its Top electrode is grounded, by artificial synapse device from low resistance state RL
Regulate and control to high-impedance state RH；
By adding amplitude or pulsewidth to be less than the pulse signal P of threshold value pulse in any one electrode of the artificial synapse deviceM, will
Another electrode is grounded, and artificial synapse device is regulated and controled to middle resistance state RM1；By changing pulse signal PMPulse parameter width
The size of value and pulsewidth, obtains different middle resistance state RMX；
When the artificial synapse device is in different middle resistance states, conductance is different, and electric current handling capacity is different, using in
Artificial synapse device under this state simulates the synapse weight that biological synapse is different；
(4) when the artificial synapse device is in high resistant, and pulse signal PM1Fail device regulating and controlling steady to some from high-impedance state
Fixed middle resistance state, but from the middle resistance state volatibility ground high-impedance state that fails back, the artificial synapse device realizes STP functions；
When the artificial synapse device is in high resistant, pulse signal PM2Device is regulated and controled to some middle resistance state, device from high-impedance state
Part failed back from the middle resistance state volatibility resistance it is stable less than non-volatile some of high-impedance state in the middle of resistance state when, it is described
Artificial synapse device realizes LTP functions；
When the artificial synapse device is in high-impedance state, continuously apply two phases on the same electrode of the artificial synapse device
Same pulse signal PM3, as the ratio between current amplitude A caused by the stimulation of pulse signal twice2/A1It is described artificial prominent during more than 1
Tentaculum part realizes PPF functions；
When the Top electrode in the artificial synapse device applies pulse train PS1, pulse train P is applied in its bottom electrodeS2, pass through
Change pulse train PS1With PS2Time interval δ t so that the knots modification of synapse weight also changes therewith；By adjusting pulse sequence
The parameter of row, when synapse weight changes and changed with δ t, realizes STDP functions；
(5) level V is read by the Top electrode input in the artificial synapse deviceread, its bottom electrode is grounded, it is artificial to realize
The reading of cynapse device weight.
8. a kind of modulator approach of synaptic plasticity of the artificial synapse device under optical signal as described in claim 1~6, its
It is characterised by, comprises the following steps：
(1) in the Top electrode input direct-current high level V of the artificial synapse deviceF, its bottom electrode is grounded, limited by adjusting
Electric current so that the resistance states of the artificial synapse device are changed into the adjustable resistance state of light pulse by initial resistivity state；
(2) in the vertical input optical pulse signal L of bottom electrode of the artificial synapse deviceM, by adjusting light pulse signal LMIt is strong
Degree, frequency and pulsewidth so that the artificial synapse device reaches different stable middle resistance state RMX, so as to simulate in biological synapse
Different weights；Wherein, X is natural number；
When the artificial synapse device is in high-impedance state, and the light pulse signal L appliedM1Fail to regulate and control device from high-impedance state
To some stable middle resistance state but from the middle resistance state volatibility ground high-impedance state that fails back, artificial synapse device realization
STP functions；
When the artificial synapse device is in high-impedance state, light pulse signal LM2Device is regulated and controled from high-impedance state and hindered in the middle of some
State, device failed back from the middle resistance state volatibility resistance it is stable less than non-volatile some of high-impedance state in the middle of resistance state when,
The artificial synapse device realizes LTP functions；
When the artificial synapse device is in high-impedance state, continuously apply two identical light pulse signal LM3, when light pulse twice
The ratio between current amplitude A caused by stimulating2/A1During more than 1, the artificial synapse device realizes PPF functions；
(3) level V is read by the Top electrode input in the artificial synapse deviceread, bottom electrode is grounded, it is artificial prominent to realize
The reading of tentaculum part weight.
9. a kind of cynapse power of artificial synapse device as described in claim 1~6 under electric signal and optical signal coupling
Remodulates method, it is characterised in that comprise the following steps：
(1) the Top electrode input direct-current high level V in described artificial synapse device is passed throughF, its bottom electrode is grounded, by adjusting
Section limitation electric current so that the resistance states of the artificial synapse device are changed into photoelectric coupling signal by initial resistance states can
The resistance state of regulation；
(2) erasing threshold value pulse signal P is applied in the bottom electrode of the artificial synapse devicereset, Top electrode is grounded, will be artificial
Cynapse device regulates and controls to high-impedance state RH；Apply pulse P in Top electrodeM1, bottom electrode is grounded, the artificial synapse device occurs one
Resistive of the volatibility ground from high-impedance state to low resistance state, resulting devices resistance returns to high-impedance state, and resistance does not change, now, the people
Work cynapse device realizes STP functions；
While bottom electrode section applies optical signal, pulse P is applied in Top electrodeM1, by change the intensity of optical signal, frequency with
Pulsewidth, device is regulated and controled to the middle resistance state R of non-volatile stabilizationMX, aid in electric impulse signal to regulate and control the people by optical signal
Work cynapse device is changed into LTP study from STP study；
(3) erasing threshold value pulse signal P is added in the bottom electrode of the artificial synapse devicereset, Top electrode is grounded, will manually be dashed forward
Tentaculum part regulates and controls to high-impedance state RH；Apply pulse P in Top electrodeM1, bottom electrode is grounded, the resistance quilt of the artificial synapse device
Regulate and control to non-volatile middle resistance state RM1, the artificial synapse device realizes LTP functions；
Apply optical signal in bottom electrode, the pulse P applied in Top electrodeM1, by changing the intensity, frequency and pulsewidth of optical signal,
Device is regulated and controled to the middle resistance state R of non-volatile stabilizationM2, RM2Less than RM1, optical signal auxiliary electric impulse signal regulation and control device reality
The LTP study of existing deeper degree；
(4) level V is read by the Top electrode input in described artificial synapse deviceread, zero level is accessed in bottom electrode, comes real
The reading of existing artificial synapse device resistance state.
10. the modulator approach as described in claim 7~9, the scope of the limitation electric current is 1nA~100mA.
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| CN114023877A (en) * | 2021-11-03 | 2022-02-08 | 陕西科技大学 | Memristor based on doped two-dimensional halide perovskite thin film and preparation method thereof |
| CN115696011A (en) * | 2022-10-27 | 2023-02-03 | 华中科技大学 | Electrically controllable color filtering array based on phase-change material and artificial vision system |
| US11950520B2 (en) | 2018-08-23 | 2024-04-02 | The University Of Hull | Optically switchable memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010106116A1 (en) * | 2009-03-17 | 2010-09-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Neural network circuit comprising nanoscale synapses and cmos neurons |
| CN104597563A (en) * | 2014-12-31 | 2015-05-06 | 清华大学 | Waveguide type memristor based on metamaterial |
| CN105761750A (en) * | 2016-02-04 | 2016-07-13 | 华中科技大学 | Memristor-based multivalued logic device and operating method thereof |
-
2017
- 2017-03-20 CN CN201710164794.9A patent/CN106981567B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010106116A1 (en) * | 2009-03-17 | 2010-09-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Neural network circuit comprising nanoscale synapses and cmos neurons |
| CN104597563A (en) * | 2014-12-31 | 2015-05-06 | 清华大学 | Waveguide type memristor based on metamaterial |
| CN105761750A (en) * | 2016-02-04 | 2016-07-13 | 华中科技大学 | Memristor-based multivalued logic device and operating method thereof |
Non-Patent Citations (1)
| Title |
|---|
| ZHENGGUO XIAO AND JINSONG HUANG: "《Energy-Efficient Hybrid Perovskite Memristors and Synaptic》", 《ADV. ELECTRON. MATER.》 * |
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