CN112349838A - Multi-mode modulated flexible perovskite neurosynaptic device and preparation method thereof - Google Patents
Multi-mode modulated flexible perovskite neurosynaptic device and preparation method thereof Download PDFInfo
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000033228 biological regulation Effects 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
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- 238000004088 simulation Methods 0.000 description 3
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- -1 polyethylene terephthalate Polymers 0.000 description 2
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Abstract
The invention discloses a multimode modulation flexible perovskite neurosynaptic device and a preparation method thereof. The multimode modulated flexible perovskite neurosynaptic device comprises: a flexible substrate; a bottom electrode formed on the flexible substrate; a functional layer, which is a halide perovskite material, formed on the bottom electrode; the top layer electrodes are distributed on the functional layer in an isolated mode, visible light sources and electric pulses are used as different signal sources for multi-mode adjustment, the ion effect of the halide perovskite material is utilized, and the nerve synapse characteristic is simulated through the movement of ions under the action of electric stimulation or optical stimulation, so that the multi-modulation effect is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a flexible perovskite neurosynaptic device modulated in a multi-mode and a preparation method thereof.
Background
The traditional von Neumann computing architecture has the problems of high power consumption, low efficiency and the like, and the human brain has the characteristics of high efficiency and low power consumption when processing information. In order to simulate human brain calculation, the framework nerve synapse device has important significance for simulating a basic unit neuron for biological information processing and calculation.
For a neurosynaptic electronic device, complex synaptic plasticity cannot be realized by single electrical modulation, and the working environment of the device is limited. The multi-mode modulation is gradually adopted by researchers, the neural synapse plasticity simulation can be more flexibly and effectively realized by utilizing the photoelectric double modulation, and the method has more advantages when complex signals are processed, and has become a new development wave.
Disclosure of Invention
The invention discloses a multimode modulation flexible perovskite neurosynaptic device, which comprises: a flexible substrate; a bottom electrode formed on the flexible substrate; a functional layer, which is a halide perovskite material, formed on the bottom electrode; the top layer electrodes are distributed on the functional layer in an isolated mode, visible light sources and electric pulses are used as different signal sources for multi-mode adjustment, the ion effect of the halide perovskite material is utilized, and the nerve synapse characteristic is simulated through the movement of ions under the action of electric stimulation or optical stimulation, so that the multi-modulation effect is achieved.
In the multimode modulated flexible perovskite neurosynaptic device of the present invention, preferably, the flexible substrate is PET, PI, PDMS, or photo paper.
In the multimode modulated flexible perovskite neurosynaptic device of the present invention, preferably, the halide perovskite material is CH3NH3PbBr3、CH3NH3PbI3Or CH3NH3PbCl3。
In the multimode modulated flexible perovskite neurosynaptic device of the present invention, preferably, the bottom electrode is Pt, Au, TiN, Al or ITO.
In the multimode modulated flexible perovskite neurosynaptic device according to the present invention, preferably, the top electrode is Al, Au, Ti or Ni.
The invention also discloses a preparation method of the multimode modulation flexible perovskite neurosynaptic device, which comprises the following steps: forming a bottom electrode on a flexible substrate; forming a functional layer on the bottom electrode, wherein the functional layer is a halide perovskite material; top layer electrodes which are mutually isolated and distributed are formed on the functional layer, a visible light source and an electrical pulse are used as different signal sources for multi-mode adjustment, and the ion effect of a halide perovskite material is utilized to simulate the nerve synapse characteristic through the movement of ions under the action of electrical stimulation or optical stimulation, so that the multi-modulation effect is realized.
In the preparation method of the multimode modulated flexible perovskite neurosynaptic device, preferably, the halide perovskite material is CH3NH3PbBr3、CH3NH3PbI3Or CH3NH3PbCl3。
In the preparation method of the multimode modulated flexible perovskite neurosynaptic device, the functional layer is preferably formed by a spin-coating method.
In the method for preparing the multimode modulated flexible perovskite neurosynaptic device, the step of forming the functional layer preferably includes: dropwise coating a halide perovskite solution on the bottom layer electrode to enable the halide perovskite solution to be paved on the bottom layer electrode; and naturally airing in a glove box to form the functional layer.
Drawings
FIG. 1 is a flow chart of a method of making a multimode modulated flexible perovskite neurosynaptic device of the present invention.
FIGS. 2 to 4 are schematic structural diagrams of steps of a method for preparing a multimode modulated flexible perovskite neurosynaptic device according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely understood, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
FIG. 1 is a flow chart of a method of making a multimode modulated flexible perovskite neurosynaptic device of the present invention. As shown in FIG. 1, the preparation method of the flexible perovskite neurosynaptic device with multi-mode modulation comprises the following steps:
in step S1, a 2 × 2cm flexible polyethylene terephthalate (PET) substrate 100 was prepared for the fabrication of the multimode flexible perovskite neurosynaptic device. The flexible substrate may also be Polyimide (PI), Polydimethylsiloxane (PDMS), photo paper, or the like.
In step S2, an underlying electrode Pt101 having a thickness of 50nm is prepared on the flexible substrate 100 by physical vapor deposition, and the resulting structure is shown in fig. 2. Wherein, the bottom electrode can also be Au, TiN, Al, ITO and the like; the thickness is preferably 30nm to 100 nm. If the thickness of the bottom layer electrode is too thin, the problem of puncture easily occurs during the puncture test. If the thickness is too thick, cost increases.
In step S3, the functional layer 102 is formed on the bottom electrode by the spin coating method, and the resulting structure is shown in fig. 3. Specifically, CH is applied by dropping with a dispenser dropper on a substrate on which the underlying electrode 101 is formed3NH3PbBr3The solution is allowed to spread over the bottom electrode 101. Then, the functional layer is placed in a glove box and naturally aired for 24 hours, and the preparation of the functional layer is completed. Wherein the perovskite solution may also be CH3NH3PbI3，CH3NH3PbCl3Etc.; the airing time can be 12 to 48 hours.
In step S4, a top electrode 103 with a thickness of 50nm was prepared on the functional layer 102 using an electron beam evaporation method using a hard mask, and the resulting structure was as shown in fig. 4. The top electrodes 103 are distributed on the functional layer 102 in a mutually isolated manner. The material of the top electrode is preferably Al, Au, Ti, Ni and the like; the thickness is preferably 30nm to 100 nm.
In step S5, the visible light source and the electrical pulse are used as different signal sources for multi-mode adjustment, so as to achieve multiple modulation effects such as simultaneous excitation or suppression. Specifically, halide perovskite (CH)3NH3PbBr3，CH3NH3PbI3，CH3NH3PbCl3Etc.) an ionic semiconductor has a feature of coexistence of an ionic effect and excellent electronic characteristics. The transmission of information between neurons in living organisms depends on Na+,K+,Ca2+And the like. Mobile ion Br of halide perovskite-，I-，Cl-Has similar properties to those of movable ions in organisms, and has the efficacy of simulating information transfer. By means of the ionic effect of the halide perovskite material, under the action of electrical stimulation or optical stimulation, the multimode modulation flexible perovskite neurosynaptic device can simulate the neurosynaptic characteristic through the movement of ions.
Wherein, the electrical working mode is as follows: br in halide perovskite material when applying positive electrical pulse signal on top electrode of device-Will be attracted to the top electrode leaving Br vacancies to accumulate forming a conductive channel. When the accumulated Br vacancy can be connected with the top electrode and the bottom electrode, the whole device is in a conductive low-resistance state. The process of Br ion movement under voltage stimulation and Br vacancy gradual accumulation is similar to the process of ion movement in organism nerve synapse to generate time course enhanced plasticity, wherein the current process state is similar to the weight value in the organism and can be used for storing and transmitting information. Br in halide perovskite material when negative electric pulse signal is applied to top electrode of device-Will be repelled to the bottom electrode direction and fill up Br vacancies, resulting in an increase in overall device resistance, similar to long-term inhibition plasticity in living organisms.
The optical working mode is as follows: when an optical pulse signal is applied to the top electrode of the device, the halide perovskite material is excited to produce Br-And Br vacancy, and the accumulation of a large amount of Br vacancies can cause the reduction of the integral resistance weight of the device, thereby realizing the biological plasticity simulation of the device.
The multimode modulated flexible perovskite neurosynaptic device disclosed by the invention comprises the following components as shown in FIG. 4: a flexible substrate 100; a bottom layer electrode 101 formed on the flexible substrate 100; a functional layer 102, which is a halide perovskite material, formed on the bottom layer electrode 101; and the top layer electrodes 102 are distributed on the functional layer 102 in an isolated mode. The visible light source and the electric pulse are used as different signal sources for multi-mode regulation, and the ion effect of the halide perovskite material is utilized to simulate the nerve synapse characteristic through the movement of ions under the action of electric stimulation or optical stimulation, so that the multi-modulation effect is realized.
The invention utilizes multimode stimulation of light, electricity and the like, simulates the nerve synapse characteristic by virtue of the ionic effect of a halide perovskite material, and is used for constructing a flexible storage-computation integrated nerve computing system. The traditional electrical modulation mode is broken through, optical pulse modulation and other modes are introduced, so that the plasticity simulation of the nerve synapse is more flexible and diverse, and the method has more advantages when complex signals are processed. In addition, the ionic halogenated perovskite material with the ion transmission similar to the ion transmission of the nerve signal is used as a functional layer, so that the ion transmission process and the nerve synapse function of the nerve synapse can be simulated to the maximum extent, and the development direction of the ionic nerve synapse device is developed. The flexible perovskite neurosynaptic device has the potential of being integrated with a solar cell device, and lays a foundation for the development of a green energy wearable flexible nerve computing device.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (9)
1. A multimode modulated flexible perovskite neurosynaptic device characterized in that,
the method comprises the following steps:
a flexible substrate;
a bottom electrode formed on the flexible substrate;
a functional layer, which is a halide perovskite material, formed on the bottom electrode;
top electrodes distributed on the functional layer in an isolated manner,
the visible light source and the electric pulse are used as different signal sources for multi-mode regulation, and the ion effect of the halide perovskite material is utilized to simulate the nerve synapse characteristic through the movement of ions under the action of electric stimulation or optical stimulation, so that the multi-modulation effect is realized.
2. The multimode modulated flexible perovskite neurosynaptic device according to claim 1,
the flexible substrate is PET, PI, PDMS or photo paper.
3. The multimode modulated flexible perovskite neurosynaptic device according to claim 1,
the halide perovskite material is CH3NH3PbBr3、CH3NH3PbI3Or CH3NH3PbCl3。
4. The multimode modulated flexible perovskite neurosynaptic device according to claim 1,
the bottom electrode is Pt, Au, TiN, Al or ITO.
5. The multimode modulated flexible perovskite neurosynaptic device according to claim 1,
the top electrode is Al, Au, Ti or Ni.
6. A preparation method of a flexible perovskite neurosynaptic device with multi-mode modulation is characterized in that,
the method comprises the following steps:
forming a bottom electrode on a flexible substrate;
forming a functional layer on the bottom electrode, wherein the functional layer is a halide perovskite material;
forming top layer electrodes which are distributed on the functional layer in an isolated way,
the visible light source and the electric pulse are used as different signal sources for multi-mode regulation, and the ion effect of the halide perovskite material is utilized to simulate the nerve synapse characteristic through the movement of ions under the action of electric stimulation or optical stimulation, so that the multi-modulation effect is realized.
7. The method of making a multimode modulated flexible perovskite neurosynaptic device according to claim 6,
the halide perovskite material is CH3NH3PbBr3、CH3NH3PbI3Or CH3NH3PbCl3。
8. The method of making a multimode modulated flexible perovskite neurosynaptic device according to claim 6,
the functional layer is formed using a spin-on coating process.
9. The method of making a multimode modulated flexible perovskite neurosynaptic device according to claim 8,
the step of forming the functional layer specifically includes:
dropwise coating a halide perovskite solution on the bottom layer electrode to enable the halide perovskite solution to be paved on the bottom layer electrode;
and naturally airing in a glove box to form the functional layer.
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| GB201419992D0 (en) * | 2014-11-10 | 2014-12-24 | Provost Fellows Foundation Scholars & The Other Members Of Board Of The College Of The Holy And Undi | An associative memory learning device |
| CN105789434A (en) * | 2014-12-25 | 2016-07-20 | 北京有色金属研究总院 | Resistive random access memory based on organic/inorganic hybrid perovskite material and fabrication method of resistive random access memory |
| CN106981567A (en) * | 2017-03-20 | 2017-07-25 | 华中科技大学 | A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor |
| CN110660912A (en) * | 2019-09-19 | 2020-01-07 | 深圳第三代半导体研究院 | Preparation method of flexible resistive random access memory device based on perovskite |
| CN111816765A (en) * | 2020-06-23 | 2020-10-23 | 北京航空航天大学 | Metal halide perovskite memristor with multi-dendritic snowflake-like structure |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201419992D0 (en) * | 2014-11-10 | 2014-12-24 | Provost Fellows Foundation Scholars & The Other Members Of Board Of The College Of The Holy And Undi | An associative memory learning device |
| CN105789434A (en) * | 2014-12-25 | 2016-07-20 | 北京有色金属研究总院 | Resistive random access memory based on organic/inorganic hybrid perovskite material and fabrication method of resistive random access memory |
| CN106981567A (en) * | 2017-03-20 | 2017-07-25 | 华中科技大学 | A kind of artificial synapse device and its modulator approach based on photoelectric coupling memristor |
| CN110660912A (en) * | 2019-09-19 | 2020-01-07 | 深圳第三代半导体研究院 | Preparation method of flexible resistive random access memory device based on perovskite |
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