CN110660912A - Preparation method of flexible resistive random access memory device based on perovskite - Google Patents
Preparation method of flexible resistive random access memory device based on perovskite Download PDFInfo
- Publication number
- CN110660912A CN110660912A CN201910885452.5A CN201910885452A CN110660912A CN 110660912 A CN110660912 A CN 110660912A CN 201910885452 A CN201910885452 A CN 201910885452A CN 110660912 A CN110660912 A CN 110660912A
- Authority
- CN
- China
- Prior art keywords
- film
- preparation
- solution
- memory device
- perovskite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000004528 spin coating Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000007747 plating Methods 0.000 claims abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 37
- 239000000463 material Substances 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 14
- 230000003287 optical effect Effects 0.000 abstract description 7
- 230000001052 transient effect Effects 0.000 description 12
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 8
- 230000015654 memory Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000006399 behavior Effects 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 102000011782 Keratins Human genes 0.000 description 1
- 108010076876 Keratins Proteins 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- -1 chalcogenide compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000036314 physical performance Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention provides a preparation method of a flexible resistive random access memory device based on perovskite, which comprises the following steps of 1): adding PbX into dimethylformamide solution2Preparation of PbX2A solution; 2): CsX is added into the methanol solution2Preparation CsX2A solution; 3): PbX2Preparation of PbX by solution spin-coating on substrate and annealing2A film; 4): PbX2The film is placed in CsX2CsPbX preparation by growth in solution and annealing3A film; 5): CsPbX3And plating an Ag electrode on the film to obtain the flexible resistive random access memory device. The invention prepares pure inorganic CsPbX by a simple two-step method under the low temperature condition3Thin film material, CsPbX3The thin film has good optical performance, and the prepared flexible resistive random access memory device has typical resistive random characteristics, wherein the high-low resistance ratio is-10,And the device has good durability and mechanical stability.
Description
Technical Field
The invention belongs to the technical field of resistive random access memory devices, and particularly relates to a preparation method of a flexible resistive random access memory device based on a perovskite material.
Background
Resistive switching random access memory with a two-terminal sandwich structure is considered to be one of the most promising memory technologies for next generation memory. The traditional resistive device has the advantages of high expandability, high operation speed, low power consumption and the like. Various materials, such as metal oxides, nitrides, polymers, and chalcogenide compounds, have been shown to exhibit resistive switching behavior. In addition, efforts are being made to explore new switching materials, advanced manufacturing processes, high performance, and resistive switching mechanisms. The resistance change device with advanced functions of flexibility, transparency, wearability and the like has important value and advantages in future electronic application. Especially the development of transient storage devices, is essential to meet the demands of future transient information storage systems. Research on transient non-volatile memory devices has been the focus of attention so far. However, biodegradable materials and electronic devices with Mg nanoelectrodes take a long time to degrade. On the one hand, reducing program dissolution time and optimizing transient conditions are key to improving transient performance. On the other hand, the search for new transient electronic materials remains an important task.
The unique physicochemical properties of halide perovskites and the superior optoelectronic properties of thin film devices have led to interest in the study of perovskite-based memories. Perovskite material is a material with cubic crystal structure, and CaTiO is discovered for the first time since the 19 th century3Since the past, the perovskite material based on the superiority of the performance is actively and widely usedExtensive study was conducted. The perovskite material has the chemical formula ABX3By adjusting the composition, type and structure of the three elements in the chemical formula, a considerable number of perovskite materials can be explored. In recent years, halide perovskite materials continue to attract extensive attention and research in the optoelectronic industry at home and abroad due to good optical properties including high carrier mobility, high absorbance, moderate forbidden bandwidth and the like. However, most organic-inorganic hybrid perovskite materials are unstable in structural properties, so that the research and development of inorganic perovskite materials with relatively stable properties have good prospects.
The halide perovskite layer-based flexible non-volatile memory device exhibits reproducible and reliable memory characteristics in terms of program/erase operations, data retention and endurance. These studies provide an opportunity to understand and design high performance next generation non-volatile storage devices.
Disclosure of Invention
The invention provides a preparation method of a flexible resistive random access memory device based on perovskite, which comprises the following steps
1): adding PbX into dimethylformamide solution2Preparation of PbX2A solution;
2): CsX is added into the methanol solution2Preparation CsX2A solution;
3)：PbX2preparation of PbX by solution spin-coating on substrate and annealing2A film;
4)：PbX2the film is placed in CsX2CsPbX preparation by growth in solution and annealing3A film;
5)：CsPbX3and plating an Ag electrode on the film to obtain the flexible resistive random access memory device.
Preferably, in the 1), PbX2The mass concentration of the solution is 300-400g/L, the preparation condition is that the solution is magnetically stirred for 0.5-1.5h at the temperature of 50-80 ℃ and filtered by a filter with the aperture of 0.2-0.4 mu m.
Preferably, in 2), CsX2The mass concentration of the solution is 10-30g/L, and the preparation condition is that the solution is magnetically stirred for 0.5-1.5h at the temperature of 30-70 ℃.
Preferably, the preparation method of the substrate in 3) comprises
3.1 filtering PEDOT, namely PSS solution;
3.2 ultrasonically cleaning the PET substrate coated with the ITO, drying the PET substrate by using nitrogen and cleaning the PET substrate by using ozone;
and 3.3 spin coating PEDOT: PSS on the ITO coated PET substrate to form a substrate.
Preferably, in the step 3.1, the pore size of the equipment used for filtering is 0.3-0.5 μm; the 3.2-step ultrasonic cleaning mode is to perform ultrasonic cleaning for 15-45min in washing refined water, deionized water and absolute ethyl alcohol in sequence; the ozone cleaning time is 10-30 min.
Preferably, the spin-coating speed in 3.3 is 3000-4000rpm, and the spin-coating time is 10-40 s.
Preferably, the spin-coating temperature in the step 3) is 50-80 ℃, the spin-coating rotation speed is 3000-4000rpm, the annealing temperature is 50-90 ℃, and the annealing time is 10-30 min.
Preferably, the CsPbX is prepared in the step 4)3The film conditions were:
4.1 PbX2the film is placed in CsX2In the solution, the temperature is kept at 30-70 ℃, the growth is carried out for 5-20 minutes, and the CsPbX is prepared3A film precursor;
4.2 CsPbX3putting the film precursor into isopropanol and keeping for 5-30 s;
4.3 Nitrogen purge CsPbX3A film precursor;
annealing at 4.450-90 deg.C for 20-40min to prepare CsPbX3A film.
Preferably, said 5) comprises
5.1: capping the mask plate to CsPbX3On the film;
5.2: heating an Ag source in a vacuum to form a silver vapor stream, incident CsPbX3Solidifying the surface of the film to form an Ag film;
5.3: continuously evaporating Ag film with thickness of 50-150nm to form Ag electrode.
Preferably, it is characterized in that: and X is any element of Cl, Br or I.
The invention has the beneficial effects that:
(1) the preparation by spin coating and growth two-step method and evaporation deposition is studiedBased on CsPbBr3A thin film transient resistive switching memory exhibiting non-volatile resistive switching behavior.
(2) The perovskite thin film has good crystallinity and optical performance, the crystal is uniformly distributed, and the average roughness of the perovskite thin film is nano-scale.
(3) Obtaining Ag/CsPbX for the first time3The device has good repeatability and mechanical stability, and shows a specific I-V characteristic curve of the resistive device, and the switching ratio is 10 to 10.
(4) The perovskite thin film disappears in 60s in water, and the transient resistance change characteristic performance is shown along with the disappearance of the optical performance of the thin film and the electrical performance of a device, so that the perovskite thin film has the potential of realizing a transient electronic device which is triggered and dissolved by deionized water.
Drawings
In order to make the object, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings for explanation:
FIG. 1 shows a flexible pure inorganic perovskite CsPbBr3A preparation flow schematic diagram of the resistive random access memory device;
FIG. 2 is a perovskite CsPbBr3XRD characteristic pattern of the film;
FIG. 3 is a perovskite CsPbBr3An optical property map of the film;
FIG. 4(a) is an I-V characteristic curve of an Ag/keratin/FTO memory device in semi-logarithmic scale. (b) A graph showing the endurance of the memory device under 100 voltage consecutive scans;
fig. 5 is a graph of mechanical stability of a flexible resistive switching memory device;
fig. 6 to 7 are graphs of physical transient characteristics of the resistive memory device.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1 CsPbBr based on pure inorganic perovskite3Preparation method of flexible resistive random access memory
The precursor was prepared as shown in figure 1:
1): and (3) mixing PEDOT: PSS is filtered by a filter with the pore diameter of 0.45 mu m for standby;
2): 2.0mmol of PbBr2(734mg) dissolved in 2mL of dimethylformamide and magnetically stirred at 75 ℃ for 1 hour to complete dissolution to give a clear and transparent solution, which is then filtered for use using a 0.22 μm pore size filter, the temperature being maintained at 75 ℃ at all times;
3): 0.14mmol of cesium bromide CsBr crystal (30mg) was added to 2mL of methanol CH3In OH solution, stirring was carried out at 50 ℃ for 30 minutes until the crystals were completely dissolved.
The perovskite thin film prepared by the two-step method shown in figure 1 adopts spin coating and soaking:
1): and sequentially putting the flexible ITO substrate into washing refined water, deionized water and absolute ethyl alcohol, respectively ultrasonically cleaning for 30min, and quickly drying by using nitrogen after cleaning. Then treating the substrate with a UV ultraviolet ozone cleaner for 15 minutes;
2): the filtered solution of PEDOT: PSS as a binder layer for forming a more uniform CsPbBr was spin coated on the ITO coated PET substrate at 3500rpm for 30 seconds3And (3) a membrane. It can improve the inherent mechanical brittleness and poor physical performance of ITO/PET base material;
3): the filtered PbBr was then kept at 75 deg.C2The solution was spin coated onto a PEDOT: PSS layer at 3500rpm, and the film was baked on a hot plate at 80 ℃ for 15 minutes to remove solvents and other organic materials, and the film became milky white. Then, PbBr is spun in at 50 DEG C2The film is put into the CsBr crystal dissolved CH3Keeping the OH solution for 15 minutes, and changing the film from milky white to yellow;
4): after 15 minutes, immediately putting the film into isopropanol, keeping the film for 15 seconds, blowing the film by using nitrogen, and annealing the film for 30 minutes at 85 ℃ to form the film.
The prepared pure inorganic calcium titaniumMine CsPbBr3The film is subjected to XRD characterization as shown in figure 2, and the result shows that the film has good crystallinity. Where two very small peaks in the XRD pattern may be associated with trace amounts of Cs4PbBr6 impurities, these impurities may be due to CsBr and PbBr2CsBr is abundant in the formation of perovskite. For pure inorganic perovskite CsPbBr simultaneously3The film was characterized by optical properties as shown in FIG. 3, with a light absorption edge at about 540nm and a PL fluorescence spectrum with a highly symmetric emission peak centered at 527nm with a narrow line width of 24 nm.
Preparation method of flexible resistive random access memory device
1) And covering the perovskite thin film with a mask plate so that the Ag film can form the required area size, and forming quasi-integrated device arrangement.
2) Heating the needed Ag source to be formed into a film in a vacuum chamber, enabling atoms or molecules of the Ag source to be gasified and escaped from the surface of the Ag source to form silver vapor flow, ascending to be incident to the surface of the perovskite film, and finally solidifying to form the solid Ag film. Setting the thickness of the film formed by the instrument, and finally evaporating a silver electrode with the thickness of about 100nm to finish Ag/CsPbBr3Preparation of memory devices of the PSS/ITO/PET architecture.
And performing electrical property characterization on the prepared resistance change device, and connecting a tungsten probe of the top Ag electrode to the bottom ITO electrode so as to provide voltage scanning when the ITO electrode is grounded. FIG. 4(a) shows the I-V characteristic of a perovskite memory device ON a semi-logarithmic scale, the OFF/ON ratio of the device being about 10. It shows that the memory device exhibits a typical bipolar resistance switching characteristic through a loop of dc voltage sweep. Wherein 4(b) is the durability of the resistance change characteristic of the device, and can distinguish two resistance states of high resistance and low resistance.
To further confirm the reliability of the memory performance of the flexible resistive switching device, the mechanical flexibility of the device was evaluated at various bending times. As shown in fig. 5, the I-V curves indicate that the bipolar resistance-switching behavior of the resistance-switching memory cell is reproducible within a bend time of 0-50, indicating that the device has good mechanical properties.
In order to study the physical transient characteristics of the devices, the prepared perovskite thin film was immersed in deionized water. As shown in fig. 6, the perovskite thin film rapidly disappears within 60 seconds by water stimulation due to its unstable humidity. Simultaneously, the optical performance and the electrical performance of the device of the thin film disappear as shown in fig. 7, and the transient resistive switching device characteristics are shown.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A preparation method of a flexible resistive random access memory device based on perovskite is characterized by comprising the following steps: comprises that
1): adding PbX into dimethylformamide solution2Preparation of PbX2A solution;
2): CsX is added into the methanol solution2Preparation CsX2A solution;
3)：PbX2preparation of PbX by solution spin-coating on substrate and annealing2A film;
4)：PbX2the film is placed in CsX2CsPbX preparation by growth in solution and annealing3A film;
5)：CsPbX3and plating an Ag electrode on the film to obtain the flexible resistive random access memory device.
2. The method for preparing the perovskite-based flexible resistive random access memory device according to claim 1, wherein: in 1) above, PbX2The mass concentration of the solution is 300-400g/L, the preparation condition is that the solution is magnetically stirred for 0.5-1.5h at the temperature of 50-80 ℃ and filtered by a filter with the aperture of 0.2-0.4 mu m.
3. The method for preparing the perovskite-based flexible resistive random access memory device according to claim 1, wherein: in said 2), CsX2The mass concentration of the solution is 10-30g/L, and the preparation condition is that the solution is magnetically stirred for 0.5-1.5h at the temperature of 30-70 ℃.
4. The method for preparing the perovskite-based flexible resistive random access memory device according to claim 1, wherein: the preparation method of the substrate in the step 3) comprises
3.1 filtering PEDOT, namely PSS solution;
3.2 ultrasonically cleaning the PET substrate coated with the ITO, drying the PET substrate by using nitrogen and cleaning the PET substrate by using ozone;
and 3.3 spin coating PEDOT: PSS on the ITO coated PET substrate to form a substrate.
5. The preparation method of the perovskite-based flexible resistive random access memory device according to claim 4, wherein: in the step 3.1, the aperture of equipment used for filtering is 0.3-0.5 μm; the 3.2-step ultrasonic cleaning mode is to perform ultrasonic cleaning for 15-45min in washing refined water, deionized water and absolute ethyl alcohol in sequence; the ozone cleaning time is 10-30 min.
6. The preparation method of the perovskite-based flexible resistive random access memory device according to claim 4, wherein: the spin-coating speed in the 3.3 process is 3000-4000rpm, and the spin-coating time is 10-40 s.
7. The method for preparing the perovskite-based flexible resistive random access memory device according to claim 1, wherein: the spin coating temperature in the step 3) is 50-80 ℃, the spin coating rotating speed is 3000-4000rpm, the annealing temperature is 50-90 ℃, and the annealing time is 10-30 min.
8. The method for preparing the perovskite-based flexible resistive random access memory device according to claim 1, wherein: preparation of CsPbX in said 4)3The film conditions were:
4.1 PbX2the film is placed in CsX2In the solution, the temperature is kept at 30-70 ℃, the growth is carried out for 5-20 minutes, and the CsPbX is prepared3A film precursor;
4.2 CsPbX3putting the film precursor into isopropanol and keeping for 5-30 s;
4.3 Nitrogen purge CsPbX3A film precursor;
annealing at 4.450-90 deg.C for 20-40min to prepare CsPbX3A film.
9. The method for preparing the perovskite-based flexible resistive random access memory device according to claim 1, wherein: said 5) comprises
5.1: capping the mask plate to CsPbX3On the film;
5.2: heating an Ag source in a vacuum to form a silver vapor stream, incident CsPbX3Solidifying the surface of the film to form an Ag film;
5.3: continuously evaporating Ag film with thickness of 50-150nm to form Ag electrode.
10. The method for preparing a flexible resistive memory device based on perovskite according to claims 1 to 9, wherein: and X is any element of Cl, Br or I.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910885452.5A CN110660912A (en) | 2019-09-19 | 2019-09-19 | Preparation method of flexible resistive random access memory device based on perovskite |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910885452.5A CN110660912A (en) | 2019-09-19 | 2019-09-19 | Preparation method of flexible resistive random access memory device based on perovskite |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110660912A true CN110660912A (en) | 2020-01-07 |
Family
ID=69038226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910885452.5A Pending CN110660912A (en) | 2019-09-19 | 2019-09-19 | Preparation method of flexible resistive random access memory device based on perovskite |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110660912A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111366571A (en) * | 2020-03-12 | 2020-07-03 | 华东师范大学 | CsPbBr 3-Au-based flexible photoinduced enhanced Raman sensor and preparation and application thereof |
| CN111668371A (en) * | 2020-04-30 | 2020-09-15 | 陕西科技大学 | Flexible resistive random access memory prepared by chemical vapor deposition and based on lead-free all-inorganic perovskite thin film |
| CN112349838A (en) * | 2020-10-27 | 2021-02-09 | 复旦大学 | Multi-mode modulated flexible perovskite neurosynaptic device and preparation method thereof |
| CN112786789A (en) * | 2021-01-08 | 2021-05-11 | 江苏大学 | Vertical Stacking of PEDOT PSS/PbS/CsPbCl3Preparation method of flexible light detector with nano structure |
| CN113013328A (en) * | 2021-02-09 | 2021-06-22 | 凯里学院 | Cesium-copper-iodine-calcium-titanium ore resistive random access memory with excellent resistance performance and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934540A (en) * | 2015-05-27 | 2015-09-23 | 湖北大学 | Plastic-based high-conductivity PEDOT: PSSS film electrode, preparation method and application thereof |
| CN108428792A (en) * | 2018-03-30 | 2018-08-21 | 深圳大学 | Based on the multistage resistance-variable storing device and preparation method of inorganic perovskite and application |
| CN108539012A (en) * | 2018-02-28 | 2018-09-14 | 湖北大学 | A kind of full-inorganic perovskite resistance-variable storing device and preparation method thereof |
| CN108766629A (en) * | 2018-05-29 | 2018-11-06 | 成都莫比斯科技有限公司 | A method of improving flexible transparent conductive film adherence |
| CN109478596A (en) * | 2016-08-03 | 2019-03-15 | 南洋理工大学 | Halide perovskite thin film and solar battery and forming method thereof comprising it |
| CN109786586A (en) * | 2019-02-15 | 2019-05-21 | 北京交通大学 | A kind of preparation method and application of full-inorganic perovskite thin film |
-
2019
- 2019-09-19 CN CN201910885452.5A patent/CN110660912A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934540A (en) * | 2015-05-27 | 2015-09-23 | 湖北大学 | Plastic-based high-conductivity PEDOT: PSSS film electrode, preparation method and application thereof |
| CN109478596A (en) * | 2016-08-03 | 2019-03-15 | 南洋理工大学 | Halide perovskite thin film and solar battery and forming method thereof comprising it |
| CN108539012A (en) * | 2018-02-28 | 2018-09-14 | 湖北大学 | A kind of full-inorganic perovskite resistance-variable storing device and preparation method thereof |
| CN108428792A (en) * | 2018-03-30 | 2018-08-21 | 深圳大学 | Based on the multistage resistance-variable storing device and preparation method of inorganic perovskite and application |
| CN108766629A (en) * | 2018-05-29 | 2018-11-06 | 成都莫比斯科技有限公司 | A method of improving flexible transparent conductive film adherence |
| CN109786586A (en) * | 2019-02-15 | 2019-05-21 | 北京交通大学 | A kind of preparation method and application of full-inorganic perovskite thin film |
Non-Patent Citations (1)
| Title |
|---|
| DONGJUE LIU 等: "《Flexible All-inorganic Perovskite CsPbBr3 Nonvolatile Memory Device》", 《APPLIED MATERIALS&INTERFACES》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111366571A (en) * | 2020-03-12 | 2020-07-03 | 华东师范大学 | CsPbBr 3-Au-based flexible photoinduced enhanced Raman sensor and preparation and application thereof |
| CN111668371A (en) * | 2020-04-30 | 2020-09-15 | 陕西科技大学 | Flexible resistive random access memory prepared by chemical vapor deposition and based on lead-free all-inorganic perovskite thin film |
| CN111668371B (en) * | 2020-04-30 | 2024-01-26 | 陕西科技大学 | Preparation of flexible resistive random access memory based on leadless all-inorganic perovskite film by chemical vapor deposition |
| CN112349838A (en) * | 2020-10-27 | 2021-02-09 | 复旦大学 | Multi-mode modulated flexible perovskite neurosynaptic device and preparation method thereof |
| CN112786789A (en) * | 2021-01-08 | 2021-05-11 | 江苏大学 | Vertical Stacking of PEDOT PSS/PbS/CsPbCl3Preparation method of flexible light detector with nano structure |
| CN112786789B (en) * | 2021-01-08 | 2024-03-22 | 江苏大学 | Vertically stacking PEDOT: PSS/PbS/CsPbCl 3 Method for preparing nanostructure flexible photodetector |
| CN113013328A (en) * | 2021-02-09 | 2021-06-22 | 凯里学院 | Cesium-copper-iodine-calcium-titanium ore resistive random access memory with excellent resistance performance and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110660912A (en) | Preparation method of flexible resistive random access memory device based on perovskite | |
| Zhang et al. | A facile route to grain morphology controllable perovskite thin films towards highly efficient perovskite solar cells | |
| CN108539012B (en) | All-inorganic perovskite resistive random access memory and preparation method thereof | |
| CN113224239B (en) | In-situ generated water and thermal stable passivation layer and perovskite solar cell with same | |
| CN108010912B (en) | Full inorganic calcium-carbon mineral quantum point CsPbBr3Electric memory device and preparation method thereof | |
| Cai et al. | Compact pure phase CsPbBr3 perovskite film with significantly improved stability for high-performance memory | |
| CN108525963A (en) | A kind of preparation method of inorganic halogen perovskite thin film | |
| CN107275434A (en) | A kind of purely inorganic photodetector based on ZnO/CsPbBr3/MoO3 structures | |
| Yang et al. | Solution‐Processed Hydrogen‐Bonded Organic Framework Nanofilms for High‐Performance Resistive Memory Devices | |
| CN116390641A (en) | HfO (HfO) 2 Preparation method of base ferroelectric capacitor | |
| KR101804173B1 (en) | BaSnO3 film, and method of low- temperature manufacturing the same | |
| He et al. | Single‐Crystal Seeds Inducing the Crystallization of High‐Performance α‐FAPbI3 for Efficient Perovskite Solar Cells | |
| Shen et al. | A polyanionic strategy to modify the perovskite grain boundary for a larger switching ratio in flexible woven resistive random-access memories | |
| Abbas et al. | A Low Power‐consumption and Transient Nonvolatile Memory Based on Highly Dense All‐Inorganic Perovskite Films | |
| CN111341912A (en) | Write-once read-many memory based on hybrid perovskite and preparation method thereof | |
| Wang et al. | Effect of P3HT passivation layer on triple cation organic-inorganic hybrid perovskite memristor | |
| CN108922965B (en) | resistive random access memory based on perovskite material and preparation method thereof | |
| CN110635050A (en) | Method for preparing high-quality perovskite thin film with assistance of pressure | |
| CN108922962B (en) | perovskite resistive random access memory based on Zr element doping and preparation method thereof | |
| CN112820824A (en) | Perovskite memristor and preparation method thereof | |
| CN110311037B (en) | Hole transport layer for flexible perovskite solar cell, and preparation method and application thereof | |
| CN115148904B (en) | Transparent and stable all-inorganic metal halogen perovskite photoelectric detector and preparation method and application thereof | |
| CN109461812A (en) | RRAM and preparation method thereof based on aluminum oxide | |
| CN111293218B (en) | Resistive random access memory based on cesium copper iodoperovskite thin film and preparation method thereof | |
| KR101912735B1 (en) | BaSnO3 film, and method of low- temperature manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230412 Address after: No. 1088, Xueyuan Avenue, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant after: Southern University of Science and Technology Address before: Taizhou building, No. 1088, Xueyuan Avenue, Xili University Town, Nanshan District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN THIRD GENERATION SEMICONDUCTOR Research Institute |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200107 |