CN107634140B - Based on SiNxLight read nerve synapse device architecture and preparation method thereof - Google Patents
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- 238000004544 sputter deposition Methods 0.000 claims description 12
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
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- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
The present invention provides a kind of based on SiNxLight read nerve synapse device architecture and preparation method thereof, including " metal/SiNx/ metal " surface plasma waveguide and " top electrode/bis- change resistance layers/lower electrode " memristor being embedded；Surface plasma waveguide has " second metal layer/dielectric layer/the first metal layer " vertical three-decker from top to bottom；Memristor has " top electrode/the second change resistance layer/the first change resistance layer/lower electrode " vertical four-layer structure from top to bottom, and the first change resistance layer of memristor, the second change resistance layer are connected as lightray propagation channel with the dielectric layer level of surface plasma waveguide；The present invention realizes that the light of nerve synapse weight is read, so that reading nerve synapse device using optical signal amplitude and phase as the light of synapse weight, with the incomparable advantage of traditional cynapse device using resistance as synapse weight, surface plasma waveguide can allow optical signal to break through diffraction limit and be transmitted, and be conducive to device size and further reduce.
Description
Technical field
The invention belongs to silicon-based photonics integration devices and neuromorphic chip field, and in particular to one kind is based on SiNxLight
Read nerve synapse device and preparation method thereof.
Background technique
Memristor with " medium/metal layer/metal " sandwich structure, if applying different bias voltages, device
Resistance value nonlinear change will be presented.The nonlinear change of this resistance is by conductive channel in dielectric layer under different biass
Caused by being formed or being disappeared.It is interesting that the bonding strength of this nanoscale filiform conductive channel can be with the amplitude of bias
It changes with action time.The working mechanism of the cynapse of different neurons is connected in this characteristic and biological nervous system very
It is similar.The exactly this similitude of memristor and biosystem cynapse makes it be highly suitable as cynapse device for constructing mind
Brain chip is imitated through form, and then is used for artificial neural network.Research confirms up to the present the bionical cynapse based on memristor is
The closest bionical device with cynapse in biological nervous system.
Memristor provides a kind of more outstanding cynapse device for artificial neural network, however all at present based on recalling
The bionical cynapse device of resistance device is all to read the synaptic weight in cynapse device with electric signal.The signal bandwidth of electron transmission
It is small, it can generate and interfere with each other in transmittance process.In contrast, photon has the concurrency of signal, while having with roomy spy
Property, so that being read out then advantageously using optical signal (amplitude and phase) as information media to synapse weight.However, arriving mesh
Before until, in the cynapse Device Patent based on memristor effect announced, be all based on full electronic media to synapse weight into
Row read, can be referred to as " readings of electrical modulation electricity ", be read using photon intermediate nerve synapse weight (reference according to
According to: CN 104916313 A, CN 10378055A, CN105287046A, CN105304813A, CN 104934534 A, CN
104376362 A)。
Summary of the invention
The present invention proposes that a kind of novel light based on memristor effect reads nerve synapse device, using light as signal medium,
Synaptic weight is represented with light intensity and phase, its object is to break through the bandwidth limitation of traditional neural cynapse device signal processing, is mentioned
For it is a kind of with excellent Parallel signal processing ability based on SiNxLight read nerve synapse device and preparation method thereof.
For achieving the above object, technical solution of the present invention is as follows:
One kind being based on SiNxLight read nerve synapse device architecture, including " metal/SiNx/ metal " surface plasma-wave
" top electrode/bis- change resistance layers/lower electrode " memristor led and be embedded；
The surface plasma waveguide has " second metal layer/dielectric layer/the first metal layer " vertical three from top to bottom
Layer structure；
The memristor has " top electrode/the second change resistance layer/the first change resistance layer/lower electrode " vertical four layers of knot from top to bottom
Structure；
The memristor is embedded among surface plasma waveguide, and the first change resistance layer of memristor, the second change resistance layer are as light
Signal propagation ducts are connected with the dielectric layer level of surface plasma waveguide.
It is preferred that the first change resistance layer is pure SiNxFilm.
It is preferred that the second change resistance layer is the SiN containing metal nanoparticlexFilm, the metal nanoparticle
It is preferably silver-colored selected from silver, copper or aluminium.
It is preferred that the top electrode, lower electrode are all inert electrode.
It is preferred that second change resistance layer is contained by what cosputtering method combined standard CMOS technology obtained
Silver, copper, aluminium one of which metal nano particle SiNxFilm, x=0.9~1.1, with a thickness of 10nm~30nm, metal is received
Rice grain content is the 30%~45% of film quality.
It is preferred that first change resistance layer is obtained by magnetically controlled sputter method combined standard CMOS technology
Intrinsic SiNxFilm, x=0.9~1.1, with a thickness of 30nm~50nm.
It is preferred that the first metal layer and second metal layer are Ag.
It is preferred that the top of the top electrode is located inside second metal layer.A part of light can be reduced in this way
The loss of signal.
It is preferred that the memristor top electrode, lower electrode are using physical gas-phase deposite method combined standard
The inert metal platinum electrode that CMOS technique obtains, with a thickness of 10nm~20nm, and its width and surface plasma waveguide width phase
Together.
For achieving the above object, the present invention also provides a kind of above-mentioned based on SiNxLight read nerve synapse device junction
The preparation method of structure, includes the following steps:
(1) prepare silicon single crystal flake, and carry out washing and drying treatment；
(2) using physical gas-phase deposite method and combined standard CMOS technology, the first metal layer is formed；
(3) it firstly, in one layer photoresist of surface spin coating where the first metal layer, is walked using mask plate and photoetching, development
Suddenly, memristor window is realized；Secondly, using plasma reinforced chemical vapour deposition method, in gluing and patterned first
On metal layer, SiN is depositedxFilm is as waveguide medium layer；Third is obtained and is located above the first metal layer using stripping technology
Waveguide medium layer, and wherein reserve memristor window；
(4) firstly, photoetching agent pattern is formed except memristor region using photoetching process, secondly, being sequentially depositing memristor
Electrode, the first change resistance layer, the second change resistance layer and top electrode under device, wherein lower electrode is obtained using d.c. sputtering method；First
Change resistance layer is amorphous Si NxFilm, x=0.9~1.1 are obtained using reaction magnetocontrol sputtering method；Second change resistance layer is containing gold
The amorphous Si N of metal nano-particlexFilm, x=0.9~1.1, top electrode are obtained using d.c. sputtering method；Third, using stripping
Separating process removes above-mentioned 4 layer film, obtains the memristor being located in surface plasma waveguide；
(5) on the basis of step (3), using metal lift-off material, the second metal layer of surface plasma waveguide is formed；
(6) common response ion etching RIE technique is used, residual photoresist is removed, completes cleaning, dry subsequent handling.
Basic functional principle of the invention is: when applying forward voltage between device top electrode and lower electrode, (electricity is adjusted
System), the metal nanoparticle in the second change resistance layer moves in the first change resistance layer in electric field action, so that in memristor change resistance layer
The distribution of metal nanoparticle recombinates；Memristor change resistance layer after the light and recombination transmitted in surface plasma waveguide
After interacting, decaying occurs for the amplitude for transmitting light, phase postpones, to realize modulation (the light reading of synapse weight
It takes).When applying backward voltage between device top electrode and lower electrode (electrical modulation), the metal in the first change resistance layer is moved to
Nano particle is returned under electric field action in the second change resistance layer, can equally make the distribution of metal nanoparticle in memristor change resistance layer
It recombinates, so that modulate light intensity and phase are restored.Obviously, in a cycle of electrical modulation, light reads mind
Variation degree through memristor synapse weight, there are one-to-one relationships with the voltage that is applied.
The invention has the benefit that the present invention is based on " metals/SiNx/ metal " memristor structure, mating surface etc. from
Wavelet is led, and realizes that the light of nerve synapse weight is read.Since optical signal can be realized parallel and big bandwidth in transmission process
Feature so that using optical signal amplitude and phase as the light of synapse weight read nerve synapse device, have using resistance as dash forward
Touch the incomparable advantage of traditional cynapse device of weight.More importantly surface plasma waveguide can allow optical signal prominent
Broken diffraction limit is transmitted, and is conducive to device size and is further reduced.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
1 is the first metal layer, and 2 be dielectric layer, and 3 be second metal layer, and 4 be lower electrode, and 5 be the first change resistance layer, and 6 be second
Change resistance layer, 7 be top electrode.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
One kind being based on SiNxLight read nerve synapse device architecture, including " metal/SiNx/ metal " surface plasma-wave
" top electrode/bis- change resistance layers/lower electrode " memristor led and be embedded；
The surface plasma waveguide has " 3/ dielectric layer of second metal layer, 2/ the first metal layer 1 " vertical from top to bottom
Three-decker；
The memristor has " the lower electrode 4 of 7/ second change resistance layer of top electrode, 6/ first change resistance layer 5/ " vertical four from top to bottom
Layer structure；
The memristor is embedded among surface plasma waveguide, memristor the first change resistance layer 5,6 conduct of the second change resistance layer
Lightray propagation channel is connected with 2 level of dielectric layer of surface plasma waveguide.
Specifically, the first change resistance layer 5 is pure SiNxFilm.
Specifically, the second change resistance layer 6 is the SiN containing metal nanoparticlexFilm, the metal nanoparticle are selected from
Silver, copper or aluminium, it is preferably silver-colored；
Specifically, the top electrode 7, lower electrode 4 are all inert electrode.
Preferably, second change resistance layer 6 be by cosputtering method combined standard CMOS technology obtain argentiferous,
Copper, aluminium one of which metal nano particle SiNxFilm, with a thickness of 10nm~30nm, metal nanoparticle content is film
The 30%~45% of quality.
Preferably, first change resistance layer 5 is by the intrinsic of magnetically controlled sputter method combined standard CMOS technology acquisition
SiNxFilm, with a thickness of 30nm~50nm.
Specifically, the first metal layer and second metal layer are Ag.
Specifically, the top of the top electrode 7 is located inside second metal layer 3.A part of optical signal can be reduced in this way
Loss.
Preferably, the memristor top electrode 7, lower electrode 4 are using physical gas-phase deposite method combined standard CMOS
The inert metal platinum electrode that technique obtains, with a thickness of 10nm~20nm, and its width and surface plasma waveguide are of same size.
The present embodiment also provides a kind of above-mentioned based on SiNxLight read nerve synapse device architecture preparation method, including
Following steps:
(1) prepare silicon single crystal flake, and carry out washing and drying treatment by standard technology；
(2) using physical gas-phase deposite method and combined standard CMOS technology, forming length is 10 μ m, 0.8 μ m
0.1 μm of Ag the first metal layer 1；
(3) firstly, utilizing mask plate and photoetching, development in one layer photoresist of surface spin coating where Ag the first metal layer 1
And etc., realize that length and width is the memristor window of 0.8 μm of 5 μ m；Secondly, using plasma reinforced chemical vapour deposition
(PECVD) method, on gluing and patterned Ag the first metal layer 1, deposition thickness is the silicon nitride (SiN of 50nmx) thin
Film is as waveguide medium layer；Third obtains 10 μ m, 0.8 μ m for being located at 1 top of Ag the first metal layer using stripping technology
0.05 μm of waveguide medium layer, and wherein reserving the memristor window that length and width is 0.8 μm of 5 μ m；
(4) firstly, forming photoetching agent pattern except memristor region using photoetching process.Secondly, being sequentially depositing memristor
Electrode 4, the first change resistance layer 5, the second change resistance layer 6 and top electrode 7 under device.Wherein, lower electrode 4 is Pt, thickness 10nm, using straight
Sputtering method is flowed to obtain；First change resistance layer 5 is amorphous Si NxFilm, x=0.9~1.1, with a thickness of 30nm, using reaction magnetic
Sputtering method is controlled to obtain；Second change resistance layer 6 is the amorphous Si N of the nano particle containing AgxFilm, x=0.9~1.1, thickness~
10nm, amount containing Ag 35%；Top electrode 7 is Pt, thickness 10nm, is obtained using d.c. sputtering method.Third is gone using stripping technology
Except above-mentioned 4 layer film, the memristor being located in surface plasma waveguide is obtained；
(5) on the basis of step (3), using metal lift-off material, the second metal layer of surface plasma waveguide is formed
3, it is 0.1 μm of Ag metal layer；
(6) common response ion etching RIE technique is used, residual photoresist is removed, completes the subsequent work such as cleaning, dry
Sequence.
The basic functional principle of the present embodiment is: when applying forward voltage between device top electrode 7 and lower electrode 4
(electrical modulation), the metal nanoparticle in the second change resistance layer 6 moves in the first change resistance layer 5 in electric field action, so that memristor
The distribution of metal nanoparticle recombinates in change resistance layer；The memristor after light and recombination transmitted in surface plasma waveguide
After device change resistance layer interacts, decaying occurs for the amplitude for transmitting light, phase postpones, to realize the tune of synapse weight
It makes (light reading).When applying backward voltage between device top electrode 7 and lower electrode 4 (electrical modulation), the first resistive is moved to
Metal nanoparticle in layer 5 is returned under electric field action in the second change resistance layer 6, can equally make metal in memristor change resistance layer
The distribution of nano particle recombinates, so that modulate light intensity and phase are restored.Obviously, in a week of electrical modulation
In phase, light reads the variation degree of neural memristor synapse weight, and there are one-to-one relationships with the voltage that is applied.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (9)
1. one kind is based on SiNxLight read nerve synapse device architecture, it is characterised in that: including " metal/SiNx/ metal " surface
Plasma waveguide and " top electrode/bis- change resistance layers/lower electrode " memristor being embedded；
The surface plasma waveguide has " second metal layer/dielectric layer/the first metal layer " vertical three-layered node from top to bottom
Structure；
The memristor has " top electrode/the second change resistance layer/the first change resistance layer/lower electrode " vertical four-layer structure from top to bottom,
The memristor is embedded among surface plasma waveguide, and the first change resistance layer of memristor, the second change resistance layer are as optical signal
Propagation ducts are connected with the dielectric layer level of surface plasma waveguide；
It is described to be based on SiNxLight read nerve synapse device architecture preparation method, include the following steps:
(1) prepare silicon single crystal flake, and carry out washing and drying treatment；
(2) using physical gas-phase deposite method and combined standard CMOS technology, the first metal layer is formed；
(3) real using mask plate and photoetching, development step firstly, in one layer photoresist of surface spin coating where the first metal layer
Existing memristor window；Secondly, using plasma reinforced chemical vapour deposition method, in gluing and patterned the first metal layer
On, deposit SiNxFilm is as waveguide medium layer；Third obtains the waveguide being located above the first metal layer using stripping technology
Dielectric layer, and memristor window is reserved wherein；
(4) firstly, photoetching agent pattern is formed except memristor region using photoetching process, secondly, being sequentially depositing under memristor
Electrode, the first change resistance layer, the second change resistance layer and top electrode, wherein lower electrode is obtained using d.c. sputtering method；First resistive
Layer is amorphous Si NxFilm, x=0.9~1.1 are obtained using reaction magnetocontrol sputtering method；Second change resistance layer is to receive containing metal
The amorphous Si N of rice grainxFilm, x=0.9~1.1, top electrode are obtained using d.c. sputtering method；Third, using removing work
Skill removes above-mentioned 4 layer film, obtains the memristor being located in surface plasma waveguide；
(5) on the basis of step (4), using metal lift-off material, the second metal layer of surface plasma waveguide is formed；
(6) common response ion etching RIE technique is used, residual photoresist is removed, completes cleaning, dry subsequent handling.
2. according to claim 1 a kind of based on SiNxLight read nerve synapse device architecture, it is characterised in that: it is described
Metal nanoparticle be selected from silver, copper or aluminium.
3. according to claim 1 a kind of based on SiNxLight read nerve synapse device architecture, it is characterised in that: it is described
Top electrode, lower electrode be all inert electrode.
4. according to claim 1 a kind of based on SiNxLight read nerve synapse device architecture, it is characterised in that: it is described
The second change resistance layer be that the argentiferous, copper, aluminium one of which metal obtained by cosputtering method combined standard CMOS technology is received
The SiN of rice grainxFilm, x=0.9~1.1, with a thickness of 10nm~30nm, metal nanoparticle content is film quality
30%~45%.
5. according to claim 1 a kind of based on SiNxLight read nerve synapse device architecture, it is characterised in that: it is described
The first change resistance layer be by magnetically controlled sputter method combined standard CMOS technology obtain intrinsic SiNxFilm, x=0.9~1.1,
With a thickness of 30nm~50nm.
6. according to claim 1 a kind of based on SiNxLight read nerve synapse device architecture, it is characterised in that: it is described
The first metal layer and second metal layer are Ag.
7. according to claim 1 a kind of based on SiNxLight read nerve synapse device architecture, it is characterised in that: it is described
The top of top electrode is located inside second metal layer.
8. according to claim 1 a kind of based on SiNxLight read nerve synapse device architecture, it is characterised in that: it is described
Memristor top electrode, lower electrode be that the inert metal platinum that is obtained using physical gas-phase deposite method combined standard CMOS technology is electric
Pole, with a thickness of 10nm~20nm, and its width is identical as surface plasma waveguide geometric widths.
9. based on SiN described in claim 1 to 8 any onexLight read nerve synapse device architecture preparation method,
It is characterized in that including the following steps:
(1) prepare silicon single crystal flake, and carry out washing and drying treatment；
(2) using physical gas-phase deposite method and combined standard CMOS technology, the first metal layer is formed；
(3) real using mask plate and photoetching, development step firstly, in one layer photoresist of surface spin coating where the first metal layer
Existing memristor window；Secondly, using plasma reinforced chemical vapour deposition method, in gluing and patterned the first metal layer
On, deposit SiNxFilm is as waveguide medium layer；Third obtains the waveguide being located above the first metal layer using stripping technology
Dielectric layer, and memristor window is reserved wherein；
(4) firstly, photoetching agent pattern is formed except memristor region using photoetching process, secondly, being sequentially depositing under memristor
Electrode, the first change resistance layer, the second change resistance layer and top electrode, wherein lower electrode is obtained using d.c. sputtering method；First resistive
Layer is amorphous Si NxFilm, x=0.9~1.1 are obtained using reaction magnetocontrol sputtering method；Second change resistance layer is to receive containing metal
The amorphous Si N of rice grainxFilm, x=0.9~1.1, top electrode are obtained using d.c. sputtering method；Third, using removing work
Skill removes above-mentioned 4 layer film, obtains the memristor being located in surface plasma waveguide；
(5) on the basis of step (4), using metal lift-off material, the second metal layer of surface plasma waveguide is formed；
(6) common response ion etching RIE technique is used, residual photoresist is removed, completes cleaning, dry subsequent handling.
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| CN109065713B (en) * | 2018-08-07 | 2020-07-31 | 电子科技大学 | SPR (surface plasmon resonance) nerve synapse device based on a-Si memristor effect and preparation method thereof |
| CN109037443B (en) * | 2018-08-07 | 2020-07-31 | 电子科技大学 | Based on a-SiNxSPR (surface plasmon resonance) nerve synapse device with memristive effect and preparation method thereof |
| US11562221B2 (en) * | 2020-03-26 | 2023-01-24 | International Business Machines Corporation | Optical synapses |
| CN112885868A (en) * | 2021-02-03 | 2021-06-01 | 湖北大学 | 1S1R device based on niobium oxide gate tube and preparation method thereof |
| CN112885869A (en) * | 2021-02-03 | 2021-06-01 | 湖北大学 | 1S1R device based on metallic intercalation and preparation method thereof |
| CN113723602A (en) * | 2021-09-01 | 2021-11-30 | 哈尔滨工程大学 | Nerve synapse scheme of optical fiber structure |
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| US7991253B2 (en) * | 2009-04-30 | 2011-08-02 | Hewlett-Packard Development Company, L.P. | Memristive array with waveguide |
| US9281091B1 (en) * | 2013-03-13 | 2016-03-08 | The Board Of Trustees Of The Leland Stanford Junior University | Method and structure for plasmonic optical trapping of nano-scale particles |
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