CN109037316A - A kind of super large chip area N substrate unidirectionally returns TVS device structure suddenly - Google Patents
A kind of super large chip area N substrate unidirectionally returns TVS device structure suddenly Download PDFInfo
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- CN109037316A CN109037316A CN201810887487.8A CN201810887487A CN109037316A CN 109037316 A CN109037316 A CN 109037316A CN 201810887487 A CN201810887487 A CN 201810887487A CN 109037316 A CN109037316 A CN 109037316A
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- Prior art keywords
- chip
- tvs
- carrier
- area
- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 238000005538 encapsulation Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 9
- 239000003292 glue Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000004026 adhesive bonding Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
Abstract
The invention discloses a kind of super large chip area N substrates unidirectionally to return TVS device structure suddenly, including TVS chip and carrier, the TVS chip is consistent with size of the carrier in length and width, it is characterized in that, the area of the TVS chip back anode metal is less than the area of the carrier and is not extend to carrier edge.The present invention changes back metal graphics art, reduces back metal size, will not draw back metal in scribing in this way, and the generation for avoiding Ag wadding improves encapsulation yield to reduce short-circuit risks.
Description
Technical field
The invention belongs to semiconductor chip packaging technology fields, and in particular to a kind of super large chip area N substrate list
To time TVS device structure suddenly.
Background technique
As industry instantly of greatest concern, the center of entire integrated circuit industry all exists for mobile phone and its auxiliary product at present
It is deviated towards mobile phone and its auxiliary product industry: state-of-the-art chip technology, the manufacturing process of most significant end and most efficient assembling
Technology etc. is all drawn close to mobile phone industry.As chip technology technology, high speed fast charge technology, ultra-thin and ultra-light require to be continuously improved,
Reliability is faced with great challenge, and the failure of EOS and ESD, surge are more and more, and repair rate is also sharply increasing, thus
So that overvoltage protection just becomes most important in entire circuit system.In the consumer electronics charging circuit such as mobile phone, it is desirable that surge
Just the ultralow unidirectional device of residual voltage is able to satisfy protection demand, so that meet the ultralow requirement of positive negative sense surge residual voltage, it is compatible simultaneously
The requirement of the N substrate chip of the market mainstream, the unidirectional TVS device of returning suddenly of N substrate is just at most effective scheme.It charges in protection
When IC chip, cooperation OVP device can achieve the effect that positive surge residual voltage and negative sense surge residual voltage are ultralow, ICs all kinds of to rear end
Chip can play outstanding protective effect.
The protection of overwhelming majority power supply and charging port is all intended to select the protection device of unidirectional N substrate at present, with
The electronic equipment for consumption shipment amounts such as mobile phone, plate and periphery accessory increasingly increase severely, and battery capacity was originally bigger, lead to charging electricity
Stream, charging voltage are higher and higher, and all charge power and charge efficiency is being continuously improved in the fast charge of various versions, in order to guarantee to charge
Safety and reliability, to protection device, more stringent requirements are proposed, while requiring small in size, thickness thin for encapsulation and more
Easily welding.
For existing DFN2020 encapsulation technology using core on gluing process, Fig. 1 is that grooving structure N substrate unidirectionally returns TVS chip suddenly
Core post package schematic diagram in dispensing, it is phosphorosilicate glass 24, phosphorus that grooving structure N substrate unidirectionally returns the current filler of TVS chip suddenly
Silica glass 24 can sufficiently fill and lead up deep trouth, while can obtain extraordinary surface smoothness, be insulation characterisitic extraordinary one
Kind material, the disadvantage is that phosphorosilicate glass 24 is a kind of leaded material, it is exemption in industry and communication aspects, but it is electric in consumption
Sub- aspect has certain degree of harm to people；And other lead-free fillers can not be filled and led up when filling deep trouth, so
Conventional grooving structure filling object is all phosphorosilicate glass 24.Available from Fig. 1,52 fillet height of excessive glue is about in chip thickness
40% position, due to the presence of side grooving and filler 24, the PN junction that will be formed by substrate 22 and the back side diffusion region N 31
It protects, avoids by conductive adhesive shorts.But due to grooving depth, grooving will lead to very much chip deformation, shallow slot deeply
It then will lead to glue and spill into substrate 22, will lead to about 50% or so poor short circuit phenomenon generation；Filler 24 simultaneously
Containing lead as harmful matter, when being applied to consumer electronics, damage can be generated to human body, therefore conventional gluing process encapsulates grooving knot
It is also that there are problems that structure N substrate unidirectionally returns TVS chip suddenly.
Fig. 2 is the package structure diagram that plane N substrate unidirectionally returns core in TVS chip brush coating technique suddenly, plane N substrate list
The place for unidirectionally returning TVS chip suddenly with grooving structure N substrate to rapid time chip difference is that planar structure does not need grooving and fills out
It fills, therefore leaded substance will not be introduced, can satisfy the requirement of RoHS and PB Free；Relative to gluing process, brush coating technique makes
Glue 8008MD poor fluidity, therefore can be generated when upper core to avoid excessive glue.Planar structure be by one layer thin oxygen 23 come
Realize isolation, it is substantially concordant with chip edge holding if on brush coating when core, glue 51 is not in excessive glue in Fig. 2, at this time may be used
To find out that brush coating technique will not allow chip short-circuit.But the Ag wadding 42 that back metal 41 generates when due to scribing can be by back metal
It links together with the back side diffusion region P 32, glue 51 is formd by back gold 41, Ag wadding 42 with the back side diffusion region P 32 short at this time
Paths make device poor short circuit phenomenon occur.
Summary of the invention
In order to improve conventional package and traditional die structure there are the problem of, the invention discloses a kind of super large chip areas
N substrate unidirectionally returns TVS device structure suddenly.
Technical scheme is as follows:
A kind of super large chip area N substrate unidirectionally returns TVS device structure, including TVS chip and carrier, the TVS core suddenly
Piece is consistent with size of the carrier in length and width, which is characterized in that the area of the TVS chip back anode metal is less than
The area of the carrier and it is not extend to carrier edge.
The TVS chip back is equipped with oxide layer and the difference in height of back anode metal and the oxide layer is less than 1um.
The present invention changes back metal graphics art, reduces back metal size, will not draw in scribing in this way
Back metal, the generation for avoiding Ag wadding improve encapsulation yield to reduce short-circuit risks.
Detailed description of the invention
Fig. 1 is that grooving structure N substrate unidirectionally returns core post package schematic diagram in TVS chip dispensing suddenly；
Fig. 2 is the package structure diagram that plane N substrate unidirectionally returns core in TVS chip brush coating technique suddenly；
Fig. 3 is that super large chip area N substrate of the present invention unidirectionally returns TVS device structural schematic diagram suddenly；
In figure, 21 be p-type extension, and 22 be N-type substrate, and 23 be oxide layer, and 24 be filler PI, and 31 are the diffusion region N, 32
It is metal layer for the diffusion region P, 41,42 wad a quilt with cotton for position Ag, and 51 be conducting resinl, and 52 be side excessive glue, 61 packaging frames.
Specific embodiment
Present pre-ferred embodiments are provided with reference to the accompanying drawing, in order to explain the technical scheme of the invention in detail.
Embodiment:
As shown in figure 3, a kind of super large chip area N substrate of the invention unidirectionally returns TVS device structure, including TVS core suddenly
Piece and carrier, the TVS chip are consistent with size of the carrier in length and width, which is characterized in that the TVS chip back
The area of anode metal is less than the area of the carrier and is not extend to carrier edge.
The TVS chip back is equipped with oxide layer and the difference in height of back anode metal and the oxide layer is less than 1um.
Under structure of the invention, back metal and oxide layer difference in height are less than 1um, will not have an impact to brush coating technique, together
When can also reduce brush coating difficulty and the loss to equipment, core efficiency in raising；And such planar structure is not needed using filling out
Fill object, thus chip and finished product all will not leaded and halogen, meet client to RoHS and PB free requirement.The present invention is to chip
Backside structure is changed, and the metallic pattern at the back side is changed, and in scribing, dicing lane does not have metal Ag, can be avoided Ag wadding
Generation, avoid Ag wadding caused by short circuit occur, improve encapsulation yield.The ratio of chip and frame reaches under structure of the invention
The ratio of 1:1, volume production stability can achieve 98% or more yield.
Claims (2)
1. a kind of super large chip area N substrate unidirectionally returns TVS device structure, including TVS chip and carrier, the TVS chip suddenly
It is consistent with size of the carrier in length and width, which is characterized in that the area of the TVS chip back anode metal is less than institute
It states the area of carrier and is not extend to carrier edge.
2. super large chip area N substrate according to claim 1 unidirectionally returns TVS device structure, the TVS chip back suddenly
Difference in height equipped with oxide layer and back anode metal and the oxide layer is less than 1um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810887487.8A CN109037316A (en) | 2018-08-06 | 2018-08-06 | A kind of super large chip area N substrate unidirectionally returns TVS device structure suddenly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810887487.8A CN109037316A (en) | 2018-08-06 | 2018-08-06 | A kind of super large chip area N substrate unidirectionally returns TVS device structure suddenly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109037316A true CN109037316A (en) | 2018-12-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810887487.8A Pending CN109037316A (en) | 2018-08-06 | 2018-08-06 | A kind of super large chip area N substrate unidirectionally returns TVS device structure suddenly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109037316A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030222272A1 (en) * | 2002-05-30 | 2003-12-04 | Hamerski Roman J. | Semiconductor devices using minority carrier controlling substances |
| CN105261616A (en) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | Transient voltage suppressor and manufacturing method thereof |
| CN207602520U (en) * | 2017-11-09 | 2018-07-10 | 上海长园维安微电子有限公司 | A kind of high power density TVS device |
| CN208400853U (en) * | 2018-08-06 | 2019-01-18 | 上海长园维安微电子有限公司 | A kind of super large chip area N substrate unidirectionally returns TVS device structure suddenly |
-
2018
- 2018-08-06 CN CN201810887487.8A patent/CN109037316A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030222272A1 (en) * | 2002-05-30 | 2003-12-04 | Hamerski Roman J. | Semiconductor devices using minority carrier controlling substances |
| CN105261616A (en) * | 2015-09-22 | 2016-01-20 | 矽力杰半导体技术(杭州)有限公司 | Transient voltage suppressor and manufacturing method thereof |
| CN207602520U (en) * | 2017-11-09 | 2018-07-10 | 上海长园维安微电子有限公司 | A kind of high power density TVS device |
| CN208400853U (en) * | 2018-08-06 | 2019-01-18 | 上海长园维安微电子有限公司 | A kind of super large chip area N substrate unidirectionally returns TVS device structure suddenly |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Seven road 201202 Shanghai Pudong New Area Shiwan No. 1001 Applicant after: Shanghai Wei'an Semiconductor Co., Ltd Address before: 201202 Shanghai city Pudong New Area Town Road No. 1001 to seven Shiwan Building 2 Applicant before: Shanghai Changyuan Wayon Microelectronics Co., Ltd. |