CN108987552A - 量子点玻璃元件和包括其的发光器件封装体 - Google Patents

量子点玻璃元件和包括其的发光器件封装体 Download PDF

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Publication number
CN108987552A
CN108987552A CN201810397966.1A CN201810397966A CN108987552A CN 108987552 A CN108987552 A CN 108987552A CN 201810397966 A CN201810397966 A CN 201810397966A CN 108987552 A CN108987552 A CN 108987552A
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quantum dot
glass
light
glass element
light emitting
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CN108987552B (zh
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柳哲熙
宋镐荣
崔承焕
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00Re-forming shaped glass
    • C03B23/20Uniting glass pieces by fusing without substantial reshaping
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/233Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating a spot light distribution, e.g. for substitution of reflector lamps
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/235Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/237Details of housings or cases, i.e. the parts between the light-generating element and the bases; Arrangement of components within housings or cases
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20Light sources comprising attachment means
    • F21K9/23Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/238Arrangement or mounting of circuit elements integrated in the light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033Means for improving the coupling-out of light from the light guide
    • G02B6/005Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0055Reflecting element, sheet or layer
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073Light emitting diode [LED]
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0086Positioning aspects
    • G02B6/0088Positioning aspects of the light guide or other optical sheets in the package
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0086Positioning aspects
    • G02B6/009Positioning aspects of the light source in the package
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0086Positioning aspects
    • G02B6/0091Positioning aspects of the light source relative to the light guide
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509Filters, e.g. light shielding masks
    • G02F1/133514Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133614Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134336Matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • GPHYSICS
    • G02OPTICS
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Abstract

提供量子点玻璃元件和包括其的发光器件封装体。所述量子点玻璃元件可包括其中量子点、均化用无机颗粒、和粘结剂混合的量子点粉末、所述量子点粉末分散于其中的分散基体、和包围所述分散基体的密封用玻璃结构体。所述量子点玻璃元件和包括所述量子点玻璃元件的发光器件封装体可具有改善的发光特性和改善的可靠性。

Description

量子点玻璃元件和包括其的发光器件封装体
对相关申请的交叉引用
本申请要求2017年6月5日在韩国知识产权局提交的韩国专利申请No.10-2017-0069770的权益,将其公开内容全部引入本文作为参考。
技术领域
发明构思涉及量子点玻璃元件(单元、盒,cell)和包括所述量子点玻璃元件的发光器件封装体(包装,package),并且更具体地,涉及具有改善的发光特性和改善的可靠性的量子点玻璃元件、以及包括所述量子点玻璃元件的发光器件封装体。
背景技术
量子点是具有约10nm或更小的直径、呈现出量子限制效应的半导体纳米颗粒。量子点可起到波长转换材料的作用,因为量子点可吸收光并且输出具有与入射光的波长不同的波长的光。
由于量子点具有其中即使材料是相同的,发射光的波长也取决于颗粒尺寸而变化的特性,因此量子点具有改善的波长控制的优点。另外,量子点具有窄的发射光半宽度。然而,当量子点未恰当地分散或者量子点暴露于热、氧气、和/或湿气(水分)时,存在发光特性可恶化的问题。因此,改善包括量子点的量子点玻璃元件和包括所述量子点玻璃元件的发光器件封装体的发光特性和可靠性可为合乎需要的。
发明内容
发明构思提供具有改善的发光特性和改善的可靠性的量子点玻璃元件、以及包括所述量子点玻璃元件的发光器件封装体。
根据发明构思的一个方面,提供量子点玻璃元件,其包括:包括量子点、均化用无机颗粒、和粘结剂的量子点粉末,其中所述量子点、所述均化用无机颗粒、和所述粘结剂混合在一起;所述量子点粉末分散于其中的分散基体;和包围所述分散基体的密封用玻璃结构体。
所述均化用无机颗粒可包括二氧化硅(SiO2)、二氧化钛(TiO2)、或氧化铝(Al2O3)的至少一种。
所述粘结剂可包括乙烯-甲基丙烯酸(EMAA)共聚物树脂或乙烯-丙烯酸(EAA)共聚物树脂的至少一种。
所述分散基体可包括有机硅树脂。
所述分散基体可进一步包括光扩散剂。
所述光扩散剂可包括氧化铝(Al2O3)。
所述量子点粉末的直径可为约1μm-约50μm。
所述密封用玻璃结构体可包括接合在一起的玻璃容器和玻璃盖。
所述玻璃容器可包括:其中布置有所述分散基体的开口、以及与所述玻璃盖紧密接触的结合部。
所述密封用玻璃结构体可包括在所述结合部处的玻璃焊接区域。
所述量子点玻璃元件可进一步包括在所述玻璃盖与所述玻璃容器之间的玻璃层。
所述玻璃层可吸收具有550nm-600nm的波长的光。
根据发明构思的一个方面,提供量子点玻璃元件,其包括:包括开口的玻璃容器;在所述开口中的分散基体;分散在所述分散基体中的量子点粉末;和在所述玻璃容器和所述分散基体上的玻璃盖,其中所述量子点粉末包括量子点、均化用无机颗粒、和粘结剂。
所述均化用无机颗粒可包括二氧化硅(SiO2)、二氧化钛(TiO2)、或氧化铝(Al2O3)的至少一种。
所述粘结剂可包括乙烯-甲基丙烯酸(EMAA)共聚物树脂或乙烯-丙烯酸(EAA)共聚物树脂的至少一种。
所述分散基体可包括有机硅树脂。
所述分散基体可进一步包括光扩散剂。
所述光扩散剂可包括氧化铝(Al2O3)。
所述量子点粉末的直径可为约1μm-约50μm。
所述量子点玻璃元件可进一步包括将所述玻璃容器连接至所述玻璃盖的玻璃焊接区域。
所述量子点玻璃元件可进一步包括在所述玻璃容器与所述玻璃盖之间的玻璃层。
所述玻璃层可吸收具有550nm-600nm的波长的光。
根据发明构思的一个方面,提供发光器件封装体,其包括:基板;在所述基板上的外壳,所述外壳包括空腔;在所述基板上的发光器件,所述发光器件在所述外壳的空腔中;覆盖所述发光器件的发光器件包封部;和在所述发光器件包封部上的如上所述的任意量子点玻璃元件。
所述外壳可包括铝(Al)或铜(Cu)的至少一种。
所述发光器件封装体可进一步包括包围所述量子点玻璃元件的侧壁的反射性部分。
所述发光器件包封部可包括荧光体(phosphor)。
所述发光器件包封部可包括光扩散剂。
附图说明
由结合附图考虑的以下详细描述,将更清楚地理解发明构思的实施方式,其中:
图1为根据实施方式的量子点玻璃元件的横截面图;
图2A为根据实施方式的量子点玻璃元件的量子点粉末的电子显微镜图像;
图2B为不包含均化用无机颗粒的量子点粉末的电子显微镜图像;
图3A和3B以及图4A和4B为根据实施方式的量子点玻璃元件的密封用玻璃结构体的概念图;
图5为根据实施方式的量子点玻璃元件的横截面图;
图6A为显示根据实施方式的量子点玻璃元件的玻璃层的吸收光谱的图;
图6B为显示包括根据实施方式的量子点玻璃元件的发光器件封装体的发射光谱的图;
图7A-7D为说明根据实施方式的制造量子点玻璃元件的方法的横截面图;
图8A和8B为说明根据实施方式的制造量子点玻璃元件的方法的横截面图;
图9A-9C为说明根据实施方式的制造量子点玻璃元件的方法的横截面图;
图10为说明包括根据实施方式的量子点玻璃元件的发光器件封装体的结构的横截面图;
图11A-11C为说明根据实施方式的制造包括量子点玻璃元件的发光器件封装体的方法的横截面图;
图12为包括根据实施方式的发光器件封装体的背光单元的透视图;
图13为包括根据实施方式的发光器件封装体的直接型背光单元的横截面图;
图14为包括根据实施方式的发光器件封装体的显示器件的透视图;和
图15为包括根据实施方式的发光器件封装体的照明设备的透视图。
具体实施方式
图1为根据实例实施方式的量子点玻璃元件100的横截面图。
参照图1,根据实施方式的量子点玻璃元件100可包括量子点粉末110、量子点粉末110分散于其中的分散基体120、和包围分散基体120的密封用玻璃结构体130。
量子点粉末110的详细描述将随后参照图2A和2B给出,并且密封用玻璃结构体130的详细描述将随后参照图3A和3B以及图4A和4B给出。首先,描述分散基体。
分散基体120可起到分散量子点粉末110的作用。分散基体120可包括包含如下的至少一种的材料:环氧(环氧树脂)、聚甲基丙烯酸甲酯(PMMA)、聚乙烯、聚苯乙烯、和聚氨酯树脂。在一些实施方式中,分散基体120可包括对于热、湿气、和/或光高度耐受的有机硅树脂。
根据实例实施方式,分散基体120可包括光扩散剂(光漫射剂)。光扩散剂可将入射在量子点玻璃元件100上的光均匀地散播到整个量子点玻璃元件100中,从而提高光转换效率和使得实现均匀的波长转换。另外,光扩散剂可改善其中采用量子点玻璃元件100的发光器件封装体的亮度。光扩散剂可包括例如如下的至少一种:二氧化硅(SiO2)、二氧化钛(TiO2)、和氧化铝(Al2O3)。在一些实例实施方式中,光扩散剂可包括氧化铝(Al2O3)粉末。当光扩散剂包括氧化铝时,量子点粉末110的分散可更均匀。
图2A为根据实例实施方式的量子点玻璃元件的量子点粉末的电子显微镜图像。根据实施方式的量子点粉末可具有其中量子点、均化用无机颗粒和粘结剂混合的结构。
量子点可吸收入射光并且发射具有与入射光的波长不同的波长的光。例如,量子点可将蓝色光转换为绿色光或红色光。在另一实施方式中,可将紫外光变为蓝色光、绿色光或红色光。
量子点可包括选自如下的任一种:基于硅的纳米晶体、基于II-VI族的化合物半导体纳米晶体、基于III-V族的化合物半导体纳米晶体、基于IV-VI族的化合物半导体纳米晶体、以及其混合物。
基于II-VI族的化合物半导体纳米晶体可为或可包括选自如下的任一种:CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgSe、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、和HgZnSTe。
基于III-V族的化合物半导体纳米晶体可为或可包括选自如下的任一种:GaN、GaP、GaAs、AlN、AlP、AlAs、InN、InP、InAs、GaNP、GaNAs、GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaInPAs、GaInNP、GaInNAs、GaInPAs、InAlNP、InAlNAs、和InAlPAs。
基于IV-VI族的化合物半导体纳米晶体可为或可包括SbTe。
量子点可具有合金、梯度、或者芯-壳结构。合金量子点可具有其中不同类型的化合物半导体材料均匀混合的结构。梯度量子点可具有从量子点的中心至其外周逐渐变化的组成。具有芯-壳结构的量子点可包括芯纳米晶体和包围芯纳米晶体的壳纳米晶体。例如,芯纳米晶体的直径可为约1nm-约30nm、或者约3nm-约10nm,并且壳纳米晶体的厚度可为约0.1nm-约20nm、或者约0.5nm-约2nm。另外,壳纳米晶体可包括与其组合以使芯和壳稳定的有机配体。
具有合金结构、梯度结构或芯/壳结构的量子点可为或可包括选自如下的任一种:CdSe/ZnS、CdSe/ZnSe/ZnS、CdSe/CdS/ZnCdS/ZnS、InP/ZnS、InP/Ga/ZnS、InP/ZnSe/ZnS、PbSe/PbS、CdSe/CdS、CdSe/CdS/ZnS、CdTe/CdS、CdTe/ZnS、CuInS2/ZnS、和Cu2SnS3/ZnS。
均化用无机颗粒可起到使量子点粉末的尺寸均化和小型化的作用。根据实例实施方式,均化用无机颗粒可包括二氧化硅(SiO2)、二氧化钛(TiO2)、和/或氧化铝(Al2O3)的至少一种。所述二氧化硅、二氧化钛、和氧化铝还可起到光扩散剂的作用,使得量子点玻璃元件的更均匀和有效的波长转换可成为可能或者量子点玻璃元件的波长转换可改善。
粘结剂可粘结量子点和均化用无机颗粒以形成粉末。根据实施方式,粘结剂可包括乙烯-甲基丙烯酸(EMAA)共聚物树脂和乙烯-丙烯酸(EAA)共聚物树脂的至少一种。特别地,粘结剂可为由DuPont出售的树脂。
参照图2A,根据实施方式的量子点粉末具有其中量子点、包括二氧化硅(SiO2)的均化用无机颗粒、和粘结剂混合的结构。根据实施方式的量子点粉末的直径可为约1μm-约50μm,并且可典型地为约5μm-约15μm。
图2B为不包含均化用无机颗粒的量子点粉末的电子显微镜图像。
参照图2B,图2B的量子点粉末与根据实施方式的量子点粉末不同之处在于,图2B的量子点粉末不包含均化用无机颗粒。例如,图2B的量子点粉末具有其中量子点和粘结剂混合的结构。
图2B的量子点粉末的尺寸可为约1μm-约500μm并且可典型地为约1μm-约40μm。另外,虽然在图中未示出,但是也可存在具有可在视觉上识别的尺寸的量子点粉末。
与根据实施方式的量子点粉末相比,不包含均化用无机颗粒的量子点粉末可为在尺寸上更大并且不均匀的。因此,可理解,通过包含均化用无机颗粒,可形成具有细小且均匀的尺寸的量子点。
由于根据实例实施方式的量子点粉末包括分散在量子点粉末中的量子点并且可具有细小且均匀尺寸的形状,因此根据实例实施方式的量子点玻璃元件可具有均匀且高的发光效率。
图3A和3B以及图4A和4B为根据实施方式的量子点玻璃元件100的密封用玻璃结构体130的概念图。
参照图3A和3B以及图4A和4B,密封用玻璃结构体130可通过阻挡湿气和氧气而起到改善量子点玻璃元件100的发光特性和可靠性的作用。
根据实施方式,密封用玻璃结构体130可具有其中玻璃容器140、140a及140b与玻璃盖150通过激光加热而焊接的结构。由于密封用玻璃结构体130仅使用玻璃而没有使用独立的粘合(bonding)材料,因此密封用玻璃结构体130可有效地阻挡湿气和氧气并且因此量子点玻璃元件100的可靠性可改善。
参照图3A和3B以及图4A和4B,玻璃盖150可具有平板形状。玻璃盖150的厚度t3可为约0.1mm或更大例如约0.3mm-约1.0mm,以保证密封用玻璃结构体130的耐久性。玻璃盖150的宽度W可为约1.0mm-约3.0mm。然而,玻璃盖150的形状不限于此并且可多样地变化。
玻璃容器140、140a及140b可分别具有:开口141、141a及141b,其中形成有其中混合量子点粉末110的分散基体120;以及与玻璃盖150紧密接触的结合部143、143a及143b。玻璃容器140、140a及140b各自的底部的厚度t1可为约0.1mm或更大例如约0.15mm-约1.0mm,以保证密封用玻璃结构体130的耐久性。结合部143、143a及143b各自的宽度t2可为约0.1mm-约1mm例如约0.15mm-约0.4mm,以保证足够的结合面积。玻璃容器140、140a及140b各自的高度h可为约0.3mm-约1mm。
然而,玻璃容器140的形状不限于此,并且可多样地变化。例如,开口141、141a及141b可如图3A中所示具有有角形状或者如图3B中所示具有圆化形状。例如,玻璃容器140、140a及140b的外部侧壁可不与其底部表面垂直。即,玻璃容器140、140a及140b的横截面可具有梯形形状,而不是矩形形状。
参照图4A和4B,密封用玻璃结构体130可具有其中玻璃容器140和玻璃盖150通过激光加热而焊接的结构。图4A为量子点玻璃元件从其侧面观察的横截面图,且图4B为量子点玻璃元件从其上侧观察的横截面图。
根据实例实施方式,在其中玻璃容器140与玻璃盖150彼此紧密接触的结合部143中可包括玻璃焊接区域160。玻璃焊接区域160可为通过将玻璃容器140和玻璃盖150的部分熔融而形成的玻璃结构体。
玻璃焊接区域160可围绕激光的焦点通过其的焊线(焊接线)170形成。激光的斑点尺寸可为约0.5μm-约5μm,并且通过激光的加热而形成的玻璃焊接区域160的宽度W1可为约20μm-约200μm。
根据实例实施方式,焊线170可具有闭环形状。虽然焊线170具有闭环形状,但是围绕焊线170形成的玻璃焊接区域160可部分地断开。原因是因为所述加热在一些区域中可为不足的并且因此玻璃盖150或玻璃容器140的熔融可不充分地发生。例如,玻璃焊接区域160可包括断开区域D。
根据实施方式,焊线170可为多个闭环的形式,如图4A和4B中所示。所述多个闭环可基本上彼此平行。由于玻璃焊接区域160是沿着所述多个闭环形成的,因此密封用玻璃结构体130的氧气和湿气阻挡性能可改善。
为了防止或降低分散于分散基体120中的量子点粉末110中包含的量子点被激光加热和恶化的可能性,可使焊线170与分散基体120间隔开约20μm或更大。例如,可使焊线170与玻璃容器140的内壁的上部末端间隔开约20μm或更大。
图5为根据实施方式的量子点玻璃元件200的横截面图。下文中,将主要描述与参照图3描述的实施方式的区别。
参照图5,量子点玻璃元件200包括在玻璃容器140的结合部143与玻璃盖150之间的玻璃层230。玻璃层230可通过用激光加热放置在玻璃容器140的结合部143与玻璃盖150之间的玻璃料(glass frit)210(参见图8)而形成。
玻璃料210(参见图8)可包括玻璃粉末、有机溶剂、和粘结剂。另外,玻璃料210(参见图8)可包括吸收具有激光的波长的光的光吸收材料。
玻璃粉末的材料可包括选自如下的一种或多种化合物:氧化镁、氧化钙、氧化锶、氧化钡、氧化铯、氧化钠、氧化钾、氧化硼、氧化钒、氧化锌、氧化碲、氧化铝、二氧化硅、氧化铅、氧化锡、氧化磷、氧化钌、氧化铑、氧化铁(铁氧化物)、氧化铜、二氧化锰、氧化钼、氧化铌、氧化钛、氧化钨、氧化铋、氧化锆、氧化锂、氧化锑、硼酸铅玻璃、磷酸锡玻璃、钒酸盐玻璃、和硼硅酸盐玻璃。
通过向玻璃料210照射激光,形成了从其除去了有机溶剂和/或粘结剂的玻璃层230。通过激光的照射,玻璃料210中包含的玻璃粉末材料可被完全地熔融、固定和一体化,或者被部分地熔融和固定。
虽然玻璃层230被图示为形成于结合部143的整个表面上,但是玻璃层230可仅形成于结合部143的表面的一部分上。在此情况下,玻璃层230的宽度可为约100μm-约1mm。
图6A为显示根据实施方式的量子点玻璃元件的玻璃层的吸收光谱的图。
参照图6A,图的横轴表示吸收光的波长,并且图的纵轴表示玻璃层230(参见图5)的相对吸收。根据实施方式的玻璃层230(参见图5)可吸收具有在特定区域中的波长的光。例如,玻璃层230可吸收具有约550nm-约600nm的波长的光,并且可在约570nm-约590nm的波长处具有最大吸收率。
图6B为显示包括根据实施方式的量子点玻璃元件的发光器件封装体的发射光谱的图。该实例实施方式的量子点玻璃元件100(参见图4A)不包括玻璃层230(参见图5)。
参照图6B,图的横轴表示发射光的波长,并且图的纵轴表示量子点玻璃元件的发射光的相对量。实例实施方式的发光器件封装体可发射具有约430nm-约480nm的波长的蓝色光、具有约490nm-约570nm的波长的绿色光、和具有约590nm-约650nm的波长的红色光。
当向具有所述发射光谱的发光器件封装体添加具有如图6A中所示的吸收光谱的玻璃层230时,作为在绿色光与红色光之间的边界的具有约550nm-约600nm的波长的光的发射量可降低。因此,色纯度和颜色再现性可改善。
图7A-7D为说明根据实施方式的制造量子点玻璃元件的方法的横截面图。
参照图7A-7D,制造量子点玻璃元件的方法可包括准备玻璃容器140,在玻璃容器140的开口141中形成其中分散有量子点粉末110的分散基体120,和通过使用激光器将玻璃容器140的结合部143与玻璃盖150焊接。在描述所述方法的操作之前,将首先描述制造量子点粉末110。
作为第一个操作,可制备量子点。根据实施方式,量子点可通过湿化学工艺合成。在湿化学工艺中,量子点可通过将前体材料引入到有机溶剂中而形成。因此,所合成的量子点可被分散在有机溶剂中。
当量子点分散在有机溶剂中时,可进行将量子点与有机溶剂分离。量子点与有机溶剂的分离可使用离心分离方法。通过离心分离方法的离心可重复多次。另外,所述方法可进一步包括通过使用异丙醇(IPA)和/或己烷清洗与有机溶剂分离的量子点。
有机溶剂往往阻碍包封剂例如环氧、聚甲基丙烯酸甲酯(PMMA)、聚乙烯、聚苯乙烯、聚氨酯、或有机硅树脂的固化。因此,通过进行将有机溶剂与量子点分离和除去有机溶剂,可防止包封剂未固化或者降低包封剂未固化的可能性,从而改善量子点玻璃元件的可靠性。特别地,可使用具有高的热、湿气和光耐久性的有机硅树脂作为包封剂。由于有机硅树脂具有相对低的固化速率,因此进行除去量子点中包含的有机溶剂的过程可为合乎需要的或必要的。
接着,可将所分离的量子点与均化用无机颗粒以及粘结剂混合以形成量子点粉末110。通过将均化用无机颗粒添加至量子点粉末110,量子点粉末110的尺寸可为均匀的或更均匀的并且量子点粉末110的分散性可改善。
另外,可准备玻璃容器140,如图7A中所示。玻璃容器140可以多种方式制造。玻璃容器140可通过对玻璃板进行喷砂或者湿法蚀刻以形成开口141的方法制造。在另一实施方式中,玻璃容器140可通过使用模具或者将构成结合部的玻璃结构体结合(粘合)至玻璃板的方法制造。
接着,可在玻璃容器140的开口141中形成其中分散有量子点粉末110的分散基体120,如图7B中所示。
在形成量子点粉末110之后,通过将量子点粉末110和包封剂混合而形成混合物。根据实施方式,可进一步添加光扩散剂来形成所述混合物。例如,所述混合物可通过将量子点粉末110、包封剂、和氧化铝(Al2O3)粉末混合而形成。
在接下来的操作中,可将该混合物填充在玻璃容器140的开口141中,然后将该混合物固化以形成分散基体120。所述固化可为加热所述混合物的过程,并且例如,所述固化可在约50℃-约150℃进行约20分钟-约2小时。在一些实例实施方式中,所述固化可在约50℃-约120℃进行约20分钟-约1小时。为了防止或降低量子点由于氧气而被恶化的可能性,所述固化可在非氧化性气氛、例如惰性气氛如氮气气氛中进行。
在形成分散基体120之后,可通过使用激光将玻璃容器140的结合部143与玻璃盖150焊接,如图7C和7D中所示。作为激光,例如,可使用具有在可见光区域、红外区域、或者紫外区域中的波长的激光。用于发射具有在可见光区域或红外区域中的波长的激光的激光器的实例可包括气体激光器例如Ar激光器、Kr激光器、或者CO2激光器,固体激光器例如YAG激光器、YVO4激光器、YLF激光器、YAlO3激光器、GdVO4激光器、KGW激光器、KYW激光器、翠绿宝石激光器、Ti:蓝宝石激光器、或Y2O3激光器,和/或半导体激光器例如GaN、GaAs、GaAlAs、或InGaAsP。用于发射具有在紫外区域中的波长的激光的激光器的实例可包括受激准分子激光器例如XeCl激光器或KrF激光器,和固体激光器例如YAG激光器、YVO4激光器、YLF激光器、YAlO3激光器、GdVO4激光器、KGW激光器、KYW激光器、翠绿宝石激光器、Ti:蓝宝石激光器、或Y2O3激光器。
根据实例实施方式,使用激光器的焊接可包括使玻璃盖150与结合部143紧密接触和用激光器加热玻璃容器140与玻璃盖150之间的接触部以形成玻璃焊接区域160。由于这样的结合方法不使用独立的粘合材料并且量子点玻璃元件是仅用玻璃密封的,因此可有效地阻挡湿气和氧气并且量子点玻璃元件的可靠性可改善。
返回参照图4B,用激光器加热接触部可为用激光器沿着一条或多条焊线170加热接触部。焊线170可为闭环形式。在另一实例中,焊线170可为多个闭环的形式。所述多个闭环可彼此平行、或者基本上平行。
照射激光束的方法可改变。例如,可使用在沿着焊线170移动的同时连续地照射激光束的方法。在另一实施方式中,可使用将激光束沿着一条焊线170连续地照射,然后沿着相同的焊线170再次照射的方法。在另一实施方式中,可使用将激光束沿着一条焊线170断断续续地照射以获得离散的局部的结合,然后沿着相同的焊线170连续地照射的方法。
图8A和8B为说明根据实施方式的制造量子点玻璃元件的方法的横截面图。下文中,将主要描述与参照图7A-7D描述的实施方式的区别。
参照图8A和8B,在该实施方式中,使用激光器的结合可通过使用玻璃料210进行。特别地,使用激光器的结合可包括在玻璃容器140的结合部143上形成玻璃料210的层,使玻璃盖150与玻璃料210紧密接触,和通过向玻璃料210照射激光而形成玻璃层230。
通过向玻璃料210照射激光,可形成已经从其除去了有机溶剂和/或粘结剂的玻璃层230。通过激光的照射,玻璃料210中的玻璃粉末材料可被完全地熔融、固定、和一体化,或者被部分地熔融和固定。
在该结合方法中,由于分散基体被玻璃密封,因而可有效地阻挡湿气和氧气并且因此量子点玻璃元件的可靠性可改善。另外,当形成吸收具有特定波长例如约550nm-约600nm的光的玻璃层时,色纯度和颜色再现性可改善。
图9A-9C为说明根据实施方式的制造量子点玻璃元件的方法的横截面图。下文中,将主要描述与参照图7A-7D或者图8A和8B描述的实施方式的区别。
参照图9A-9C,可同时制造多个量子点玻璃元件。在此情况下,玻璃容器140c可具有多个开口141c。所述多个开口141c可二维地排列在玻璃容器140c的平面上。所述多个开口141c之间的结合部143c的宽度可为约0.6mm或更大至约2mm或更小。所述多个开口141c可被单个玻璃盖150密封。
以与参照图7A-7D或者图8A和8B描述的相同的方式制造量子点粉末110,并且将量子点粉末110与包封剂混合以形成混合物。将所述混合物涂覆在所述多个开口141c上,然后将所述混合物固化以形成分散基体120。
接着,可通过使用激光器将玻璃盖150与玻璃容器140c焊接。使用激光器的焊接与参照图7A-7D或者图8A和8B描述的相同。然而,当焊接结合部143c时,激光的焦点通过其的焊线170(参见图4B)可与切割线190间隔开,使得在切割线190通过其的区域中未形成玻璃焊接区域160。
接着,可将玻璃盖150和玻璃容器140c沿着通过在一个开口141c与另一开口141c之间的结合部143c的切割线190切割,以制造多个量子点玻璃元件。对于所述切割,可使用机械方法或者激光器切割方法。
图10为说明包括根据实施方式的量子点玻璃元件的发光器件封装体400的结构的横截面图。
参照图10,根据本实施方式的发光器件封装体400可包括基板410、包括空腔425的外壳420、发光器件430、发光器件包封部450、和量子点玻璃元件300。
基板410可包括树脂、陶瓷、或金属。例如,基板410可为或包括印刷电路板(PCB)、金属印刷电路板(MCPCB)、或者柔性印刷电路板(FPCB)。在实施方式中,基板410可为如下的基板:其能够高度散热,使得保护量子点粉末和发光器件430免受热以及改善发光器件封装体400的可靠性可为可能的。例如,基板410可为或包括陶瓷散热板或者金属印刷电路板。
包括空腔425的外壳420可在基板410上。发光器件430、发光器件包封部450、量子点玻璃元件300等可在外壳420的空腔425中。在另一实施方式中,量子点玻璃元件300可在外壳420上。
外壳420可包括塑料材料例如丙烯腈丁二烯苯乙烯(ABS)、液晶聚合物(LCP)、聚酰胺(PA)、聚苯硫醚(PPS)、或热塑性弹性体(TPE),陶瓷材料,或者金属材料。
根据实例实施方式,外壳420的材料可为或包括高度散热且高度反射性的材料,其可有效地将热散至发光器件封装体400的外部,从而改善发光器件封装体400的可靠性并且可有效地反射从发光器件430和量子点玻璃元件300发射的光,从而改善发光器件封装体400的光效率。例如,外壳420可包括金属例如铝(Al)或铜(Cu)。为了提高外壳420的反射率,外壳420的空腔425可包括倾斜的内壁。
根据实施方式,外壳420的空腔壁可包括反射性部分470。反射性部分470可反射从发光器件430和/或量子点玻璃元件300发射的光,从而改善发光器件封装体400的亮度。
反射性部分470可包括包含具有高的光反射率的材料的聚合物材料。例如,所述聚合物材料可为或包括具有优异的热稳定性和光稳定性的材料例如聚邻苯二甲酰亚胺(PPA)。具有高的光反射率的材料可为或包括金属例如铝(Al)、银(Ag)、或金(Au),或者金属氧化物例如二氧化钛(TiO2)。
反射性部分470可通过将金属或金属氧化物涂覆在外壳420上或者通过印刷金属墨而形成。此外,反射性部分470可通过将反射性膜附着在外壳420上而形成。
根据实例实施方式,反射性部分470可包围量子点玻璃元件300的侧壁。反射性部分470可容许从发光器件430发射的光有效地入射在量子点粉末110上,从而提高波长转换效率,并且可容许通过量子点玻璃元件300而被波长转换的光被有效地发射至发光器件封装体400的外部,从而改善亮度。
发光器件430可在基板410上。发光器件430可在外壳420的空腔425中。发光器件430可为接收电信号并且发射光的光电器件例如LED。例如,发光器件430可为或包括发射蓝色光的基于GaN的LED。在另一实例中,发光器件430可为发射紫外光的基于AlGaN或AlGaInN的LED。
发光器件430可电连接至基板410。发光器件430可通过导线电连接至基板410。替代地,发光器件430可以倒装芯片结合方式直接电连接至基板410而无需导线。
发光器件包封部450可包裹在发光器件430周围。发光器件包封部450可起到物理地和化学地保护发光器件430的作用。发光器件包封部450可包括环氧、聚甲基丙烯酸甲酯(PMMA)、聚乙烯、聚苯乙烯、或聚氨酯树脂。在一些实施方式中,发光器件包封部450可包括对于热、湿气、和光高度耐受的有机硅树脂。
根据实例实施方式,发光器件包封部450可进一步包括荧光体。所述荧光体可吸收从发光器件430发射的光并且发射具有不同波长的光。由于发光器件包封部450进一步包括独立于量子点玻璃元件300的具有波长转换功能的荧光体,因此可额外地控制发光器件封装体400的亮度和色坐标。
所述荧光体可发射绿色光。在此情况下,所述荧光体可包括如下的至少一种:基于硅酸盐的荧光体例如(Ba,Sr)2SiO4:Eu,基于氧化物的荧光体例如Y3Al5O12:Ce、Tb3Al5O12:Ce、或Lu3Al5O12:Ce,和基于氮化物的荧光体例如β-SiAlON:Eu。
所述荧光体可发射红色光。在此情况下,所述荧光体可包括如下的至少一种:基于氮化物的荧光体例如CaAlSiN3:Eu、Sr2Si5N8:Eu、SrSiAl4N7:Eu、或SrLiAl3N4:Eu,或者基于氟化物的荧光体。所述基于氟化物的荧光体可为具有式A2MF6:Mn4+的荧光体。在该式中,A可为选自Li、Na、K、Rb、Ce、和NH4的一种,且M可为选自Si、Nb、Ti、Y、Gd、和Ta的一种。
荧光体组成符合化学计量学,并且各元素可用周期表上各族的另外的元素代替。例如,Sr可用碱土金属(II)族的Ba、Ca、或Mg代替,且Y可用基于镧系的元素例如Tb、Lu、Sc、或Gd代替。另外,根据期望的能级,可将作为活化剂的Eu用Ce、Tb、Pr、Er或Yb代替。活化剂可单独地使用,或者可另外使用负的(negative)活化剂等用于特性调整。特别地,为了改善在高温和高湿度下的可靠性,基于氟化物的红色荧光体可用不包含Mn的氟化物涂覆(包覆)或者可进一步在所述荧光体的表面或者所述不包含Mn的氟化物涂层(包覆层)的表面上包括有机涂层。
根据实施方式,发光器件包封部450可进一步包括光扩散剂。光扩散剂可以颗粒形式分散在发光器件包封部450中以将光在各种方向上散播和散射。光扩散剂可使直接到达在发光器件430正上方的量子点的光的量相对减少,从而减少量子点的恶化,并且可提高入射在量子点上的光的总量,从而提高光转换效率。另外,光扩散剂可改善发光器件封装体的亮度。光扩散剂可包括氧化硅、氧化钛、和氧化铝的至少一种。光扩散剂中的颗粒的尺寸可为约50nm-约10μm。
量子点玻璃元件300可在发光器件包封部450上。量子点玻璃元件300可为参照图4A和4B或者图5描述的量子点玻璃元件100或200。例如,量子点玻璃元件300可包括其中量子点、均化用无机颗粒和粘结剂混合的量子点粉末110,量子点粉末110分散于其中的分散基体120,和包围分散基体120的密封用玻璃结构体130。
量子点玻璃元件300可执行吸收从发光器件430发射的光并且发射具有与吸收光的波长不同的波长的光的波长转换功能。例如,量子点玻璃元件300可将从发光器件430发射的蓝色光转换为绿色光或红色光。替代地,量子点玻璃元件300可将从发光器件430发射的紫外光转换为蓝色光、绿色光或红色光。
发光器件封装体400可均匀地分散量子点并且保护量子点免受热、湿气、和氧气或者改善使量子点免受热、湿气、和氧气的保护,并且因此,可靠性和发光特性可改善。另外,由于发光器件封装体400包括包含量子点粉末的量子点玻璃元件300,因此在发光器件封装体400外部不需要另外的结构体来包括量子点。因此,对于各应用系统而言,由于不需要单独的结构体而存在经济优势。
图11A-11C为说明根据实施方式的制造包括量子点玻璃元件的发光器件封装体的方法的横截面图。
参照图11A-11C,将外壳420和发光器件430组装在基板410上。发光器件430可通过线结合方法或者倒装芯片结合方法电连接至基板410。
接着,将包封剂455注入到外壳420的空腔425中以覆盖发光器件430。包封剂455可包含光扩散剂或荧光体。发光器件封装体的亮度和色坐标可通过测量所制造的量子点玻璃元件300的发光特性和确定包封剂455的荧光体的量等而调节。
可将荧光体以多种方式注入到外壳420的空腔425中。例如,可使用分配、喷涂、将荧光体与包封剂混合并且将混合物涂覆在外壳420的空腔425中的方法、和将荧光体膜附着在包封剂455或发光器件430上的方法。
接着,将量子点玻璃元件安置在包封剂455上,然后将包封剂455固化以形成发光器件包封部450,从而完成发光器件封装体。
图12为包括根据实施方式的发光器件封装体的背光单元2000的透视图。
参照图12,背光单元2000可包括光导板2040和在光导板2040的两侧上的光源模块2010。另外,背光单元2000可进一步包括在光导板2040下面的反射板2020。根据实施方式的背光单元2000可为边缘型背光单元。
根据实施方式,光源模块2010可提供于光导板2040的仅一侧上或者可另外提供于另一侧上。光源模块2010可包括印刷电路板(PCB)2001和安装在PCB 2001上的多个光源2005。光源2005可为根据上述实施方式的发光器件封装体400(参见图10)。
图13为包括根据实施方式的发光器件封装体的直接型背光单元2100的横截面图。
参照图13,背光单元2100可包括光扩散板2140和在光扩散板2140下面的光源模块2110。另外,背光单元2100可进一步包括用于容纳光源模块2110的在光扩散板2140下面的底盒2160。根据本实例实施方式的背光单元2100可为直接型背光单元。
光源模块2110可包括PCB 2101和安装在PCB 2101上的多个光源2105。所述多个光源2105各自可为根据上述实施方式的发光器件封装体400(参见图10)。
图14为包括根据实施方式的发光器件封装体的显示器件3000的透视图。
参照图14,显示器件3000可包括背光单元3100、光学片材3200、和显示面板3300例如液晶面板。
背光单元3100可包括底盒3110、反射板3120、光导板3140、和安装在光导板3140的至少一侧上的光源模块3130。光源模块3130可包括PCB 3131和光源3132。特别地,光源3132可为安装在与发光表面相邻的侧上的侧视型发光器件。
光学片材3200可布置在光导板3140与显示面板3300之间并且可包括各种类型的片材例如扩散片、棱镜片、或保护片。
显示面板3300可通过使用从光学片材3200透射的光而显示图像。显示面板3300可包括阵列基板3320、液晶层3330、和滤色器基板3340。阵列基板3320可包括以矩阵形式排列的像素电极、配置成向像素电极施加驱动电压的薄膜晶体管、和配置成操作薄膜晶体管的信号线。
滤色器基板3340可包括透明基板、滤色器、和公共电极。滤色器可包括配置成选择性地透射由背光单元3100发射的白色光中的具有特定波长的光的过滤器。液晶层3330可通过形成于像素电极与公共电极之间的电场而被重排并且调节光学透射率。其光学透射率被调节的光在通过滤色器基板3340的滤色器时可显示图像。显示面板3300可进一步包括配置成处理图像信号的驱动电路。
光源3132可为或包括根据上述实施方式的发光器件封装体400(参见图10)。由于光源3132发射具有相对小的半宽度的蓝色光、绿色光、和红色光,因此发射光在通过滤色器基板3340之后可实现具有高的色纯度的蓝色、绿色和红色的颜色。
图15为包括根据实施方式的发光器件封装体的照明设备4200的透视图。照明设备4200可为泡型灯。
参照图15,照明设备4200可包括插座(socket)4210、电源4220、散热器4230、光源模块4240、和光学单元4250。
根据实施方式,光源模块4240可包括发光器件阵列,且电源4220可包括发光器件驱动器。
插座4210可配置成是用现有照明设备可更换的。电力可通过插座4210供应至照明设备4200。电源4220可被分解成第一电源4221和第二电源4222。散热器4230可包括内部散热器4231和外部散热器4232。内部散热器4231可直接连接至光源模块4240和/或电源4220。内部散热器4231可将热传输至外部散热器4232。光学单元4250可包括内部光学单元(未示出)和外部光学单元(未示出)。光学单元4250可配置成均匀地散播由光源模块4240发射的光。
光源模块4240可接收来自电源4220的电力并且向光学单元4250发射光。光源模块4240可包括一个或多个发光器件封装体4241、电路板4242、和控制器4243。控制器4243可存储发光器件封装体4241的驱动信息。发光器件封装体4241可为根据上述实施方式的发光器件封装体400(参见图10)。
虽然已经参照发明构思的实施方式具体显示和描述了发明构思,但是将理解,在不背离所附权利要求的精神和范围的情况下,可在其中进行形式和细节上的多种变化。

Claims (20)

1.量子点玻璃元件,其包括:
包括量子点、均化用无机颗粒、和粘结剂的量子点粉末,其中所述量子点、所述均化用无机颗粒、和所述粘结剂混合在一起;
所述量子点粉末分散于其中的分散基体;和
包围所述分散基体的密封用玻璃结构体。
2.如权利要求1所述的量子点玻璃元件,其中所述均化用无机颗粒包括二氧化硅(SiO2)、二氧化钛(TiO2)、或氧化铝(Al2O3)的至少一种。
3.如权利要求1所述的量子点玻璃元件,其中所述粘结剂包括乙烯-甲基丙烯酸(EMAA)共聚物树脂或乙烯-丙烯酸(EAA)共聚物树脂的至少一种。
4.如权利要求1所述的量子点玻璃元件,其中所述分散基体包括有机硅树脂。
5.如权利要求1所述的量子点玻璃元件,其中所述分散基体进一步包括光扩散剂。
6.如权利要求5所述的量子点玻璃元件,其中所述光扩散剂包括氧化铝(Al2O3)。
7.如权利要求1所述的量子点玻璃元件,其中所述量子点粉末的直径为约1μm-约50μm。
8.如权利要求1所述的量子点玻璃元件,其中所述密封用玻璃结构体包括接合在一起的玻璃容器和玻璃盖。
9.如权利要求8所述的量子点玻璃元件,其中所述玻璃容器包括:其中布置有所述分散基体的开口、以及与所述玻璃盖紧密接触的结合部。
10.如权利要求9所述的量子点玻璃元件,其中所述密封用玻璃结构体包括在所述结合部处的玻璃焊接区域。
11.如权利要求8所述的量子点玻璃元件,其进一步包括:
在所述玻璃盖与所述玻璃容器之间的玻璃层。
12.如权利要求11所述的量子点玻璃元件,其中所述玻璃层吸收具有550nm-600nm的波长的光。
13.量子点玻璃元件,其包括:
包括开口的玻璃容器;
在所述开口中的分散基体;
分散在所述分散基体中的量子点粉末;和
在所述玻璃容器和所述分散基体上的玻璃盖,
其中所述量子点粉末包括量子点、均化用无机颗粒、和粘结剂。
14.如权利要求13所述的量子点玻璃元件,其进一步包括:
将所述玻璃容器连接至所述玻璃盖的玻璃焊接区域。
15.如权利要求13所述的量子点玻璃元件,其进一步包括:
在所述玻璃容器与所述玻璃盖之间的玻璃层。
16.发光器件封装体,其包括:
基板;
在所述基板上的外壳,所述外壳包括空腔;
在所述基板上的发光器件,所述发光器件在所述外壳的空腔中;
覆盖所述发光器件的发光器件包封部;和
在所述发光器件包封部上的如权利要求1-15任一项所述的量子点玻璃元件。
17.如权利要求16所述的发光器件封装体,其中所述外壳包括铝(Al)或铜(Cu)的至少一种。
18.如权利要求16所述的发光器件封装体,其进一步包括:
包围所述量子点玻璃元件的侧壁的反射性部分。
19.如权利要求16所述的发光器件封装体,其中所述发光器件包封部包括荧光体。
20.如权利要求16所述的发光器件封装体,其中所述发光器件包封部包括光扩散剂。
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