CN108987543A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
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- CN108987543A CN108987543A CN201710403960.6A CN201710403960A CN108987543A CN 108987543 A CN108987543 A CN 108987543A CN 201710403960 A CN201710403960 A CN 201710403960A CN 108987543 A CN108987543 A CN 108987543A
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- emitting component
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- 239000004065 semiconductor Substances 0.000 claims abstract description 215
- 239000002019 doping agent Substances 0.000 claims abstract description 81
- 239000010410 layer Substances 0.000 claims description 390
- 238000009792 diffusion process Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 43
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- 239000002356 single layer Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 15
- 230000007547 defect Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000003139 buffering effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000001186 cumulative effect Effects 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003578 releasing effect Effects 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- -1 InGaN (InGaN) Chemical compound 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of light-emitting components, include an epitaxial structure, and epitaxial structure includes one first type semiconductor layer, one second type semiconductor layer and a luminescent layer.First type semiconductor layer includes one first sub- semiconductor layer, luminescent layer is set between the first type semiconductor layer and the second type semiconductor layer, first sub- semiconductor layer has a highly doped portion and a low-doped portion for the first type dopant of doping, and the doping concentration in highly doped portion is greater than 1017Atomicity/cubic centimetre and be less than or equal to 1018Atomicity/cubic centimetre, the doping concentration in low-doped portion are less than or equal to 1017Atomicity/cubic centimetre.
Description
Technical field
The present invention is about a kind of light-emitting component, especially in regard to a kind of hair with high-dopant concentration portion Yu low doping concentration portion
Optical diode.
Background technique
Light emitting diode (light emitting diode, LED) is used as efficient light-emitting component, is widely used
In various fields.The method for manufacturing light-emitting of currently available technology is that N is sequentially formed on substrate by way of epitaxy
Type semiconductor layer, luminescent layer and p type semiconductor layer obtain the epitaxial structure of light emitting diode whereby.
In the epitaxial structure of light emitting diode, due to the group of substrate, n type semiconductor layer, luminescent layer and p type semiconductor layer
Different at material, the lattice between each material mismatches (lattice mismatch) and each junction is had accumulated greatly
The stress (stress) of amount.Furthermore when semiconductor layer has been doped a large amount of dopant, dopant also can oppress and interfere half
The normal alignment of the lattice of conductor layer, causes cumulative stress in lattice.When the stress accumulated in junction or lattice is excessively high,
Defect (defect) will be formed in the junction of epitaxial structure or in lattice to discharge the stress of accumulation.However, these defects
The problems such as in the presence of light emitting diode will be made leakage current raising or breakdown voltage decline occur, lead to the reliability of light emitting diode
Decline.
Summary of the invention
The present invention is intended to provide a kind of light-emitting component, especially a kind of light-emitting component with stress adjustment structure, to
The defect that cumulative stress generates is reduced, and then solves the problems, such as that light emitting diode reliability caused by defect declines.
The light-emitting component of an embodiment according to the present invention includes epitaxial structure.Epitaxial structure include the first type semiconductor layer,
Second type semiconductor layer and luminescent layer, the first type semiconductor layer include the first sub- semiconductor layer, and luminescent layer is set to the first type half
Between conductor layer and the second type semiconductor layer, the first sub- semiconductor layer has highly doped portion and the low-mix of the first type dopant of doping
The doping concentration in miscellaneous portion, the first type dopant in highly doped portion is greater than 1017Atomicity/cubic centimetre and be less than or equal to 1018Atom
The doping concentration of number/cubic centimetre, the first type dopant in low-doped portion is less than or equal to 1017Atomicity/cubic centimetre.
In conclusion the light-emitting component of one embodiment of the invention by with the big highly doped portion of doping concentration difference with it is low
Doping reduces the cumulative stress in epitaxial structure, and then reduces the defects of epitaxial structure quantity.In this way, defect institute
The problem of causing light-emitting component reliability to decline, is resolved.
The explanation of explanation and following implementation above with respect to the content of present invention is to demonstrate and explain essence of the invention
Mind and principle, and claims of the present invention is provided and is further explained.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of the light-emitting component of first embodiment of the invention.
Fig. 2 is the schematic diagram of the doping concentration distribution of first embodiment of the invention.
Fig. 3 is the diagrammatic cross-section of the light-emitting component of second embodiment of the invention.
Fig. 4 is the schematic diagram of the doping concentration distribution of second embodiment of the invention.
Fig. 5 is the diagrammatic cross-section of the epitaxial structure and substrate in second embodiment of the invention.
Fig. 6 is the diagrammatic cross-section of the light-emitting component of third embodiment of the invention.
Fig. 7 is the diagrammatic cross-section of the light-emitting component of fourth embodiment of the invention.
Fig. 8 is the diagrammatic cross-section of the light-emitting component of fifth embodiment of the invention.
Fig. 9 is the diagrammatic cross-section of the light-emitting component of sixth embodiment of the invention.
Figure 10 is the diagrammatic cross-section of the light-emitting component of seventh embodiment of the invention.
Wherein, appended drawing reference
1,2,3,4,5,6,7 light-emitting component
100 first electrodes
200 second electrodes
300 luminescent layers
400 first type semiconductor layers
410 first sub- semiconductor layers
411 highly doped portions
412 low-doped portions
420 second sub- semiconductor layers
430 carriers provide layer
440 current-diffusion layers
500 second type semiconductor layers
600 substrates
700 buffer layers
A perforation
B insulating layer
T thickness
Specific embodiment
Describe detailed features and advantage of the invention in detail in embodiments below, content is enough to make this field
Technical staff understands technology contents of the invention and implements accordingly, and according to content disclosed in this specification, apply for a patent model
It encloses and schema, those skilled in the art can be readily understood upon related purpose and advantage of the invention.Following embodiment is used for into one
The step viewpoint that the present invention will be described in detail, but it is non-anyways to limit scope of the invention.
The light-emitting component 1 for illustrating first embodiment of the invention first, please refers to Fig. 1 and Fig. 2.Fig. 1 is that the present invention first is real
Apply the diagrammatic cross-section of the light-emitting component of example.Fig. 2 is the schematic diagram of the doping concentration distribution of first embodiment of the invention.The present invention
The light-emitting component 1 of first embodiment includes epitaxial structure.Epitaxial structure includes the first type semiconductor layer 400, second type semiconductor
Layer 500 and the luminescent layer 300 being set between the first type semiconductor layer 400 and the second type semiconductor layer 500.Epitaxial structure
Thickness T be preferred with being no more than 6 microns, and the thickness of epitaxial structure is typically larger than 1 micron, it is too thick or too it is thin all will affect it is subsequent
The yield of technique.The greatest width dimension of light-emitting component 1 is preferably between 3 to 30 microns between 1 to 100 microns,
That is, the light-emitting component 1 in first embodiment is a micron-sized miniature light-emitting component (Micro LED).
First type semiconductor layer 400 is different from the doping type of the second type semiconductor layer 500.For example, the first type half
What is mainly adulterated in conductor layer 400 is the first type dopant, and the first type dopant includes IVA race element, e.g. silicon (Si), carbon
(C) or germanium (Ge), thus the first type semiconductor layer 400 be n-type doping semiconductor layer.It is main in second type semiconductor layer 500
Doping is second type dopant, and second type dopant includes doping Group IIA element, e.g. magnesium (Mg), therefore second type is partly
Conductor layer is the semiconductor layer of p-type doping.Below by the semiconductor layer with the first type semiconductor layer 400 for n-type doping, second type
Semiconductor layer 500 is the semiconductor layer of p-type doping, illustrates the light-emitting component 1 of first embodiment of the invention.
Luminescent layer 300 is, for example, multiple quantum trap (multiple quantum well, MQW) structure.Luminescent layer 300
Material is, for example, InyGa1-yN, 0≤y < 1.In the first embodiment of the invention, luminescent layer 300 includes nitride multilayer indium gallium
(InGaN) and nitride multilayer gallium (GaN) constitute multiple quantum well construction, but not limited to this.The thickness of luminescent layer 300 is situated between
Between 0.1 micron to 1 micron, but not limited to this.
First type semiconductor layer 400 includes the first sub- semiconductor layer 410.The material of first sub- semiconductor layer 410 is ternary
Semiconductor material, e.g. InxGa1-xN, 0 < X < 1, but not limited to this.The thickness of first sub- semiconductor layer 410 is, for example,
50 nanometers (nm) to 250 nanometers, the blocked up epitaxy quality that will affect light-emitting component, but not limited to this.It is real in the present invention first
It applies in example, the material of the first sub- semiconductor layer 410 is InGaN (InGaN), can have compared to other materials and preferably answer
Power releasing effect.First sub- semiconductor layer 410 with a thickness of 200 nanometers.In other embodiments of the present invention, the first sub- semiconductor
The thickness of layer can be 75 nanometers, 100 nanometers, 150 nanometers or 225 nanometers.It illustrates, in the first example of the invention,
First sub- semiconductor layer 410 is a single layer of semiconductor layer.Specifically, in electron microscope or ion microprobe (SIMS)
Image in, each region in the first sub- semiconductor layer 410 has consistent shading value.
The doping concentration distribution of first type dopant of the sub- semiconductor layer 410 of the first of first embodiment of the invention please refers to
Fig. 2, the first sub- semiconductor layer 410 have at least one highly doped portion 411 and at least one low-doped portion of the first type dopant of doping
412.First type dopant is the main dopant in the first sub- semiconductor layer 410.Wherein, the doping concentration in low-doped portion 412
Less than or equal to 1017Atomicity/cubic centimetre (atoms/cm3), the doping concentration in preferably low-doped portion 412 is less than or equal to 5 ×
1016Atomicity/cubic centimetre is more preferably that the doping concentration in low-doped portion 412 is less than or equal to 1016Atomicity/cubic centimetre.It is special
Do not mentionlet alone bright, the doping concentration in low-doped portion 412 can level off to undoped, not be limited herein.The doping in highly doped portion 411
Concentration is greater than 1017Atomicity/cubic centimetre and be less than or equal to 1018Atomicity/cubic centimetre, preferably highly doped portion 411
Doping concentration is greater than 5 × 1017Atomicity/cubic centimetre and be less than or equal to 1018Atomicity/cubic centimetre is more preferably highly doped
The doping concentration in portion 411 is greater than 8 × 1017Atomicity/cubic centimetre and be less than or equal to 1018Atomicity/cubic centimetre.Herein,
The ratio of the doping concentration in highly doped portion 411 and the doping concentration in low-doped portion 412 is greater than 10.It is preferred that highly doped portion 411
Doping concentration and low-doped portion 412 doping concentration ratio be more than or equal to 102.Pass through the height big with doping concentration difference
Doping 411 and low-doped portion 412, the stress that when epitaxy generates are lowered.It illustrates, the doping in highly doped portion 411
The ratio of the doping concentration in concentration and low-doped portion 412 be, for example, in highly doped portion 411 the highest concentration of doping concentration with
The minimum concentration of doping concentration in low-doped portion 412 compares.In the light-emitting component of first embodiment of the invention, the first type half
Conductor layer 410 is n type semiconductor layer, the highly doped portion 411 of the first sub- semiconductor layer 410 and the doping concentration in low-doped portion 412
It is the doping concentration of the first type dopant, the first type dopant is silicon, and but not limited to this.
In the first embodiment of the invention, low-doped portion 412 is set between highly doped portion 411 and luminescent layer 300, but not
As limit.In other embodiments of the present invention, highly doped portion may be disposed between low-doped portion and luminescent layer.
In the first embodiment of the invention, the quantity in highly doped portion and low-doped portion is one.This is in a vertical light-emitting
In the direction of element 1, low-doped portion 412 covers highly doped portion 411, that is, low-doped portion 412 and highly doped portion 411 are in epitaxy
Grow up the first sub- semiconductor layer 410 when different phase formed, but not limited to this.In the first embodiment of the invention, with
One type semiconductor layer 400 contacts the surface of luminescent layer 300 toward on the basis of the direction of separate luminescent layer 300, the portion of thickness D1 to D4
Dividing corresponding is the first type semiconductor layer 400, and the corresponding part of thickness D2 to D3 is low-doped portion 412, and thickness D3 is to D4's
Corresponding part is highly doped portion 411.Low-doped portion 412 is set between highly doped portion 411 and luminescent layer 300, but not with this
It is limited.In other embodiments of the present invention, highly doped portion 411 may be disposed between low-doped portion 412 and luminescent layer 300.
In the first embodiment of the invention, the thickness (D2-D3) in low-doped portion 412 accounts for the thickness of the first sub- semiconductor layer 410
Spend the 10% to 95% of (D1-D4).It is preferred that the thickness in low-doped portion 412 accounts for the thickness of the first sub- semiconductor layer 410
60% to 95%.More preferably, the thickness in low-doped portion 412 accounts for the 80% to 95% of the thickness of the first sub- semiconductor layer 410.It is low
The ratio that the thickness of doping 412 accounts for the thickness of the first sub- semiconductor layer 410 is higher, and light-emitting component 1 of the invention can be made to have
More preferably electrically.In other embodiments of the present invention, the first sub- semiconductor layer can have multiple highly doped portions with it is multiple low-doped
Portion, and multiple highly doped portions and multiple low-doped portion's arrangements interlaced with each other, the overall thickness in low-doped portion account for the first sub- semiconductor layer
Thickness 10% to 95%, it is preferred that the overall thickness in low-doped portion account for the 60% of the thickness of the first sub- semiconductor layer to
95%, the overall thickness in more preferably low-doped portion accounts for the 80% to 95% of the thickness of the first sub- semiconductor layer.
Second type semiconductor layer 500 is set to side of the luminescent layer 300 far from the first type semiconductor layer 400.Second type half
The material of conductor layer 500 may include III-V group nitride material, such as gallium nitride (GaN), aluminium nitride (AlN), indium nitride
(InN), InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) or aluminum indium gallium nitride (AlInGaN).Second type semiconductor layer 500
Material be preferably gallium nitride layer (GaN) or aluminium gallium nitride alloy (AlGaN).Second type dopant is in the second type semiconductor layer 500
Main dopant.In the first embodiment of the invention, the second type semiconductor layer 500 is p type semiconductor layer, second type dopant
For magnesium, but not limited to this.
Due in the first sub- semiconductor layer 410 of simple layer, while there is highly doped portion 411 and low-doped portion 412, and
The doping concentration in highly doped portion 411 has biggish difference, the crystalline substance in low-doped portion 412 with the doping concentration in low-doped portion 412
Grillages arranges the degree interfered by dopant lower than the degree that the lattice arrangement in highly doped portion 412 is interfered by dopant.In this way,
The stress accumulated in the lattice in low-doped portion 412 is less than the stress accumulated in the lattice in highly doped portion 411, accumulates in epitaxial structure
Stress obtained in the low-doped portion 412 of the first sub- semiconductor layer 410 buffering and release, avoid a large amount of stress from continuing to build up
Into luminescent layer 300.The ratio that the thickness in low-doped portion 412 accounts for the thickness of the first sub- semiconductor layer 410 is higher, low-doped portion
The buffering of 412 pairs of stress and releasing effect are better.By the low-doped portion 412 being set in the first sub- semiconductor layer 410, shine
The defect that 300 stress of layer are accumulated and generated is reduced, so that the defect density in luminescent layer 300 is, for example, between 104/cm2Extremely
108/cm2Between.Whereby, the uniformity of luminance of light-emitting component 1, luminous intensity and breakdown voltage are improved, and leakage current situation obtains
To improvement, so that the electrical performance and reliability of light-emitting component entirety all get a promotion.
The light-emitting component of second embodiment of the invention will be illustrated next, referring to figure 3. to Fig. 5.Fig. 3 is that the present invention second is real
Apply the diagrammatic cross-section of the light-emitting component of example.Fig. 4 is the schematic diagram of the doping concentration distribution of second embodiment of the invention.Fig. 5 is
The diagrammatic cross-section of epitaxial structure and substrate in second embodiment of the invention.Light-emitting component includes the 100, second electricity of first electrode
Pole 200 and the epitaxial structure being set between first electrode 100 and second electrode 200.First electrode 100 and second electrode
200 be, for example, combination, the metal oxide of high-work-function metal such as platinum, nickel, titanium, gold, chromium, silver, above-mentioned alloy and above-mentioned material
Such as tin indium oxide and zinc oxide or nonmetallic materials such as conducting polymer, graphite, graphene and the black phosphorus of conduction.High work content
Number metal is, for example, the metal material that work function is not less than 4.5 electron-volts.The light-emitting component 2 of second embodiment of the invention is vertical
Straight light-emitting component, epitaxial structure are set between first electrode 100 and second electrode 200, and but not limited to this.In the present invention
In other embodiments, light-emitting component also can be horizontal light-emitting component or other kinds of light-emitting component.Light-emitting component 2 is most
Big width dimensions are between 1 to 100 microns, it is preferred that shining between 3 to 30 microns, that is, in second embodiment
Element 2 is a micron-sized miniature light-emitting component (Micro LED).Furthermore the one of the light-emitting component 2 of second embodiment of the invention
One peak inrush current density of external quantum efficiency curve, preferably, between 0.01A/cm2To 2A/cm2Between.This means, originally
The light-emitting component of invention is suitable for operating in the case where low current density.
Referring to figure 3., epitaxial structure include luminescent layer 300, be set between luminescent layer 300 and first electrode 100 the
One type semiconductor layer 400 and the second type semiconductor layer 500 being set between luminescent layer 300 and second electrode 200.Epitaxy
The thickness T of structure is preferred with being no more than 6 microns, and the thickness T of epitaxial structure is typically larger than 1 micron, too thick or too thin all by shadow
Ring the yield of subsequent technique.It below will be 100 with first electrode for N-type electrode, it is P-type electrode, the first type that second electrode, which is 200,
Semiconductor layer 400 is the semiconductor layer of n-type doping, and second type semiconductor 500 is the semiconductor layer of p-type doping, illustrates the present invention
The light-emitting component 2 of second embodiment.
The luminescent layer 300 of second embodiment of the invention is similar to the luminescent layer 300 of first embodiment of the invention, related to shine
The explanation of layer 300 just repeats no more herein.
First type semiconductor layer 400 further includes other than comprising the first sub- semiconductor layer 410 and is set to first electrode
100 and first the second sub- semiconductor layer 420 between sub- semiconductor layer 410, it is set to luminescent layer 300 and the first sub- semiconductor layer
Carrier between 410 provides layer 430 and is set to side of the second sub- semiconductor layer 420 far from the first sub- semiconductor layer 410
Current-diffusion layer 440.
The material of first sub- semiconductor layer 410 is similar to the material of the first sub- semiconductor layer 410 of first embodiment of the invention
Material, just repeats no more herein.The doping concentration distribution of first type dopant of the light-emitting component 2 of second embodiment of the invention please join
According to Fig. 4, the first sub- semiconductor layer 410 has at least one highly doped hetero moiety 411 and an at least low-mix hetero moiety 412.In the present invention
In second embodiment, with the second surface of the type semiconductor layer 500 far from luminescent layer 300 toward the direction of the first type semiconductor layer 400
On the basis of, the corresponding part of thickness D1 to D4 is the first type semiconductor layer 400, and the corresponding part of thickness D2 to D3 is low-mix
Hetero moiety 412, the corresponding part of thickness D3 to D4 is highly doped hetero moiety 411.The corresponding part of thickness D5 to D6 is luminous
Layer 300.The corresponding part of thickness D6 to D1 is that carrier provides layer 430.The corresponding part of thickness D4 to D7 is the second son half
Conductor layer 420.The part in thickness D7 toward the separate direction thickness D4 is current-diffusion layer 440.
In second embodiment of the invention, highly doped point 411 be set to low-doped portion 412 and the second semiconductor layer 420 it
Between, but not limited to this.In other embodiments of the present invention, low-doped portion may be disposed at highly doped portion and the second type semiconductor layer
Between.The highly doped portion 411 of second embodiment of the invention is similar to the doping concentration relationship in low-doped portion 412 and thickness relationship
In the highly doped portion 411 of first embodiment of the invention and the doping concentration relationship and thickness relationship in low-doped portion 412, herein just not
It is repeated here again.
Second sub- semiconductor layer 420 is set between first electrode 100 and the first sub- semiconductor layer 410.Second son is partly led
The material of body layer 420 is, for example, AlrInsGa1-r-sN, r≤0, s≤0 and 1≤r+s≤0, but not limited to this.Second son is partly led
The thickness of body layer 420 is, for example, 50 nanometers (nm) to 100 nanometers, and but not limited to this.In second embodiment of the invention, second
The material of sub- semiconductor layer 420 be gallium nitride (GaN), the second sub- semiconductor layer 420 with a thickness of 80 nanometers.The present invention other
In embodiment, the material of the second sub- semiconductor layer is InGaN, AlGaN or AlInGaN.It illustrates, the second sub- semiconductor
Layer 420 can be a single layer of semiconductor layer.
It include the first type dopant in second sub- semiconductor layer 420.In second embodiment of the invention, the second son is partly led
Body layer 420 is n type semiconductor layer, and the first type dopant is silicon, and but not limited to this.First in second sub- semiconductor layer 420
The doping concentration of type dopant is higher than the doping concentration of the first type dopant in highly doped portion 411.Further in the second son
In semiconductor layer 420, the doping concentration of the first type dopant is greater than 1018Atomicity/cubic centimetre and be less than or equal to 1020Atom
Number/cubic centimetre, preferably, the doping concentration of the first type dopant is greater than 1018Atomicity/cubic centimetre and be less than or equal to 1019
Atomicity/cubic centimetre.Thickness D4 is extremely in second embodiment of the invention, in the position corresponding diagram 4 of the second sub- semiconductor layer 420
The part of D7.It is higher than the highly doped portion 411 in the first sub- semiconductor layer 410 due to the doping concentration of the second sub- semiconductor layer 420
Doping concentration, the second sub- semiconductor layer 420 can further increase the carrier quantity in the first type semiconductor layer 400, whereby into
The luminous intensity of one step promotion luminescent layer 300.
Carrier provides layer 430 and is set between luminescent layer 300 and the first sub- semiconductor layer 410.The material of carrier offer layer 430
Material for example, AlrInsGa1-r-sN, r≤0, s≤0 and 1≤r+s≤0, but not limited to this.The thickness example of carrier offer layer 430
For example 10 nanometers (nm) to 30 nanometers, the blocked up semiconductor layer that can make subsequent epitaxy growth generates defect.It is real in the present invention second
Apply in example, carrier provide layer 430 material be gallium nitride (GaN), carrier provide layer 430 with a thickness of 20 nanometers.In the present invention
In other embodiments, the material that carrier provides layer is InGaN, AlGaN or AlInGaN.It illustrates, carrier provides layer
430 can be a single layer of semiconductor layer.
It includes the first type dopant and second type dopant that carrier, which is provided in layer 430, and the doping of the first type dopant
Concentration is greater than the doping concentration of second type dopant.In second embodiment of the invention, it is N-type semiconductor that carrier, which provides layer 430,
Layer, the first type dopant are silicon, and second type dopant is magnesium, and but not limited to this.Carrier provides the first type dopant in layer 430
Doping concentration be higher than highly doped portion 411 in the first type dopant doping concentration.Further provided in layer 430 in carrier,
The doping concentration of first type dopant is greater than 1018Atomicity/cubic centimetre and be less than or equal to 1020Atomicity/cubic centimetre, compared with
Good, the doping concentration of the first type dopant is greater than 1018Atomicity/cubic centimetre and be less than or equal to 1019Atomicity/cube li
Rice.Carrier provides the doping concentration of the second type dopant in layer 430 less than 1018Atomicity/cubic centimetre.The present invention other
In embodiment, carrier, which is provided in layer, can only have the first type dopant.Since carrier provides the doping of the first type dopant in layer 430
Concentration is higher than the doping concentration of the first type dopant in highly doped portion 411, and carrier, which provides layer 430, can further increase the first type half
Carrier quantity in conductor layer 400 further promotes the luminous intensity of luminescent layer 300 whereby.
Current-diffusion layer 440 is set to the second side of the sub- semiconductor layer 420 far from the first sub- semiconductor layer.Current spread
The material of layer 440 is AlrInsGa1-r-sN, r≤0, s≤0 and 1≤r+s≤0.The thickness of current-diffusion layer 440 is, for example, 1 micron
(μm) to 3 microns, but not limited to this.The doping concentration of first type dopant is different from the second son half in current-diffusion layer 440
The doping concentration of first type dopant in conductor layer 420.Most region in current-diffusion layer 440, the first type dopant
Doping concentration is preferably the doping concentration for being greater than the first type dopant in the second sub- semiconductor layer 420.Implement in the present invention second
In example, the material of current-diffusion layer 440 is GaN, and current-diffusion layer 440 is 2 microns of thickness of n-type doping semiconductor layer, the
Two type dopants are silicon, and the doping concentration of second type dopant is greater than 1019Atomicity/cubic centimetre, but not limited to this.
In second embodiment of the invention, current-diffusion layer 440 is set to first electrode 100 and the second sub- semiconductor layer
Between 420, but not limited to this.In other embodiments of the present invention, first electrode also may be disposed at the second sub- semiconductor layer
The same side of current-diffusion layer.With the help of current-diffusion layer 440, the electricity of current-diffusion layer 440 is entered by first electrode 100
Stream can be by being disseminated in the first type semiconductor layer 400 more evenly, and then it is more equal to be distributed the luminous intensity of luminescent layer 300
It is even.
In second embodiment of the invention, the first sub- semiconductor layer 410, the second sub- semiconductor layer 420, carrier provide layer
430 with the first type dopant for adulterating in current-diffusion layer 440 be silicon, and but not limited to this.In other embodiments of the invention
In, the first sub- semiconductor layer, the second sub- semiconductor layer, carrier provide the first type dopant adulterated in layer and current-diffusion layer can
For the first different type dopant, and the first type dopant can be silicon or carbon.
It is doped with a large amount of dopant in second sub- semiconductor layer 420 and current-diffusion layer 440, so that the second sub- semiconductor
Layer 420 and the lattice arrangement of current-diffusion layer 440 are interfered by dopant, cause cumulative stress in the second sub- semiconductor layer 420
In the lattice of current-diffusion layer 440.Due in the first sub- semiconductor layer 410, the doping concentration in highly doped portion 411 with it is low-doped
The difference of the doping concentration in portion 412 is big, and the degree that the lattice arrangement in low-doped portion 412 is interfered by dopant is lower than highly doped portion
The degree that 411 lattice arrangement is interfered by dopant.In this way, which the stress accumulated in the lattice in low-doped portion 412 is less than height
The stress accumulated in the lattice of doping 411.
Low-mix of the stress accumulated in second sub- semiconductor layer 420 and current-diffusion layer 440 in the first sub- semiconductor layer 410
Buffering and release are obtained in miscellaneous portion 412, are avoided a large amount of stress from continuing to build up carrier and are provided in layer 430 and luminescent layer 300.It is low
The ratio that the thickness of doping 412 accounts for the thickness of the first sub- semiconductor layer 410 is higher, low-doped portion 412 to the buffering of stress with
Releasing effect is better.By the low-doped portion 412 being set in the first sub- semiconductor layer 410, the accumulation of 300 stress of luminescent layer and
The defect of generation is reduced, and uniformity of luminance, luminous intensity and the breakdown voltage of light-emitting component 2 are improved, and leakage current situation obtains
To improvement, so that the electrical performance of light-emitting component entirety gets a promotion.
Second type semiconductor layer 500 is set to side of the luminescent layer 300 far from the first type semiconductor layer 400.Second type half
The material of conductor layer 500 may include III-V group nitride material for example gallium nitride (GaN), aluminium nitride (AlN), indium nitride (InN),
InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) or aluminum indium gallium nitride (AlInGaN).The material of second type semiconductor layer 500
Preferably gallium nitride layer (GaN) or aluminium gallium nitride alloy (AlGaN).In second embodiment of the invention, the second type semiconductor layer 500 is
P type semiconductor layer, second type dopant are magnesium, and the doping concentration of second type dopant is between 1019Atomicity/cubic centimetre is extremely
1020Atomicity/cubic centimetre, but not limited to this.In second embodiment of the invention, second electrode 200 is set to second type
Side of the semiconductor layer 500 far from luminescent layer 300, but not limited to this.
Epitaxial structure is the buffer layer 700 that substrate 600 is set to by manufacture of semiconductor.Substrate 600, buffer layer 700 with
The stacking order schematic diagram of epitaxial structure is referring to figure 5..Specifically, the second sub- semiconductor layer 420, the first sub- semiconductor layer
410, carrier provide layer 430, luminescent layer 300 and the second type semiconductor layer 500 sequentially in layer be arranged at buffer layer 700
Side far from substrate 600 is to obtain the epitaxial structure in second embodiment of the invention.
The material of substrate 600 is, for example, sapphire, silicon, silicon carbide, glass, ceramics, other lattice structures and buffer layer 700
The material that matches of lattice structure, but not limited to this.In other embodiments of the present invention, when the lattice structure of baseplate material
When matching with the lattice structure of current-diffusion layer, current-diffusion layer is formed directly on substrate.
Buffer layer 700 is set to 600 surface of substrate.The material of buffer layer 700 is, for example, the gallium nitride not adulterated deliberately
(GaN), but not limited to this.Lattice match between the lattice structure of buffer layer 700 and the lattice structure of substrate 600, with
And buffer layer 700 lattice structure and current-diffusion layer 440 lattice structure between lattice match, both be higher than substrate
Lattice match between 600 lattice structure and the lattice structure of current-diffusion layer 440.Whereby, make current-diffusion layer 440
Lattice arrangement is more neat, and therefore the defects of current-diffusion layer 440 quantity declines, so that the electric current in current-diffusion layer 300
It is distributed more uniform.It can further comprise one and substrate between buffer layer 700 and substrate 600 in the embodiment not shown
The nucleating layer that 600 lattice structure matches, the aluminium nitride not adulterated deliberately e.g. (AlN), can make subsequent epitaxial structure
Lattice arrangement is more neat.
In the light-emitting component 2 of second embodiment of the invention, the first type semiconductor layer 400 is the semiconductor layer of n-type doping,
The concentration of dopant is the concentration of N-type dopant in first type semiconductor layer 400, and second type semiconductor 500 is the half of p-type doping
Conductor layer, first electrode 100 are N-type electrode, and second electrode 200 is P-type electrode, and but not limited to this.In other realities of the invention
It applies in the light-emitting component of example, the first type semiconductor layer is the semiconductor layer of p-type doping, and dopant is dense in the first type semiconductor layer
Degree is the concentration of p-type dopant, and the second type semiconductor layer is the semiconductor layer of n-type doping, and first electrode is P-type electrode, second
Electrode is N-type electrode.
The light-emitting component 3 that third embodiment of the invention will be illustrated next, please refers to Fig. 6.Fig. 6 is third embodiment of the invention
Light-emitting component diagrammatic cross-section.The light-emitting component 3 of third embodiment of the invention is similar to the hair of second embodiment of the invention
Optical element 2, but the sub- semiconductor layer of light-emitting component 3 not set second of third embodiment of the invention and carrier provide layer.
Specifically, the light-emitting component 3 of third embodiment of the invention be vertical light-emitting element, including first electrode 100,
Second electrode 200, the luminescent layer 300 being set between first electrode 100 and second electrode 200, be set to first electrode 100 with
The first sub- semiconductor layer 410 between luminescent layer 300, the electricity being set between first electrode 100 and the first sub- semiconductor layer 410
Stream diffusion layer 440 and the second type semiconductor layer 500 being set between second electrode 200 and luminescent layer 300.
The light-emitting component 4 that fourth embodiment of the invention will be illustrated next, please refers to Fig. 7.Fig. 7 is fourth embodiment of the invention
Light-emitting component diagrammatic cross-section.The light-emitting component 4 of fourth embodiment of the invention is similar to the hair of second embodiment of the invention
Optical element 2, but the not set carrier of light-emitting component 4 of fourth embodiment of the invention provides layer.
Specifically, the light-emitting component 4 of fourth embodiment of the invention be vertical light-emitting element, including first electrode 100,
Second electrode 200, the luminescent layer 300 being set between first electrode 100 and second electrode 200, be set to first electrode 100 with
The first sub- semiconductor layer 410 between luminescent layer 300, be set between first electrode 100 and the first sub- semiconductor layer 410
Two sub- semiconductor layers 420, the current-diffusion layer 440 being set between first electrode 100 and the second sub- semiconductor layer 420 and
The second type semiconductor layer 500 being set between second electrode 200 and luminescent layer 300.
The light-emitting component 5 that fifth embodiment of the invention will be illustrated next, please refers to Fig. 8.Fig. 8 is fifth embodiment of the invention
Light-emitting component diagrammatic cross-section.The light-emitting component 5 of fifth embodiment of the invention is similar to the hair of second embodiment of the invention
Optical element 2, but the sub- semiconductor layer of light-emitting component 4 not set second of fourth embodiment of the invention.
Specifically, the light-emitting component 5 of fifth embodiment of the invention be vertical light-emitting element, including first electrode 100,
Second electrode 200, the luminescent layer 300 being set between first electrode 100 and second electrode 200, be set to first electrode 100 with
The first sub- semiconductor layer 410 between luminescent layer 300, the carrier being set between luminescent layer 300 and the first sub- semiconductor layer 410
Layer 430, the current-diffusion layer 440 being set between first electrode 100 and the first sub- semiconductor layer 410 are provided and are set to
The second type semiconductor layer 500 between second electrode 200 and luminescent layer 300.
The light-emitting component 6 that sixth embodiment of the invention will be illustrated next, please refers to Fig. 9.Fig. 9 is sixth embodiment of the invention
Light-emitting component diagrammatic cross-section.The light-emitting component 6 of sixth embodiment of the invention is similar to the hair of second embodiment of the invention
Optical element 2.
Specifically, the light-emitting component 6 of sixth embodiment of the invention is horizontal light-emitting component, including current-diffusion layer
440, the second type semiconductor layer 500, be set between current-diffusion layer 440 and the second type semiconductor layer 500 luminescent layer 300,
The sub- semiconductor layer 410 of first be set between current-diffusion layer 440 and luminescent layer 300 is set to current-diffusion layer 440 and
The second sub- semiconductor layer 420 between one sub- semiconductor layer is set between luminescent layer 300 and the first sub- semiconductor layer 410
Carrier provides the second of the second type semiconductor layer 500 of layer 430, the first electrode 100 for connecting current-diffusion layer 440 and connection
Electrode 200.First electrode 100 and the second sub- semiconductor layer 420 are set to the same side of current-diffusion layer 440.Furthermore, it is understood that
Second sub- semiconductor layer 420 is arranged and is covered in a part of surface of the current-diffusion layer 440 towards luminescent layer 300, first electrode
100 are arranged and are covered in another part surface of the current-diffusion layer 440 towards luminescent layer 300.
The light-emitting component 7 that seventh embodiment of the invention will be illustrated next, please refers to Figure 10.Figure 10 is that the present invention the 7th is implemented
The diagrammatic cross-section of the light-emitting component of example.The light-emitting component 7 of seventh embodiment of the invention is similar to second embodiment of the invention
Light-emitting component 2.
Light-emitting component includes current-diffusion layer 440, the second type semiconductor layer 500, is set to current-diffusion layer 440 and second
Luminescent layer 300 between type semiconductor layer 500, the first sub- semiconductor being set between current-diffusion layer 440 and luminescent layer 300
Layer 410, is set to luminescent layer at the second sub- semiconductor layer 420 being set between current-diffusion layer 440 and the first sub- semiconductor layer
300 and the first carrier between sub- semiconductor layer 410 provide layer 430, connect current-diffusion layer 440 first electrode 100 and
Connect the second electrode 200 of the second type semiconductor layer 500.First electrode 100 and the second sub- semiconductor layer 420 are set to electric current expansion
Dissipate the same side of layer 440.
Specifically, epitaxial structure has provides through the second sub- semiconductor layer 420, the first sub- semiconductor layer 410, carrier
One perforation A of layer 430, luminescent layer 300 and the second type semiconductor layer 500, and current-diffusion layer 440 is exposed in perforation A.One absolutely
Edge layer B is set to the side wall surface of perforation A.The material of insulating layer B is, for example, dielectric film or high molecular material.For example,
The material of insulating layer B is, for example, aluminium oxide (Al2O3), silica (SiO2) or silicon nitride (Si3N4) and above-mentioned material combination.It is special
Do not mentionlet alone bright, the young's modulus of the material of insulating layer B is less than epitaxial structure, first electrode 100 and second electrode 200 above-mentioned
One young's modulus, therefore it (is not painted, e.g. show backboard) Shi Ketong in subsequent 7 to one application apparatus of engagement light-emitting component
Cross buffering of the biggish insulating materials of deformability as engagement when.First electrode 100, which is arranged and is electrically connected at, is exposed to perforation A
In current-diffusion layer 440, and first electrode 100 is mentioned through the second sub- semiconductor layer 420, the first sub- semiconductor layer 410, carrier
For layer 430, luminescent layer 300 and the second type semiconductor layer 500.First electrode 100 is electrically insulated from the second son half by insulating layer B
Conductor layer 420, the first sub- semiconductor layer 410, carrier provide layer 430, luminescent layer 300 and the second type semiconductor layer 500.
In conclusion light-emitting component of the invention is poor by the doping concentration in highly doped portion and the doping concentration in low-doped portion
It is different big, so that the stress of low-doped portion accumulation is less than highly doped portion, and then make the stress accumulated in the first type semiconductor layer low
Doping obtains buffering and release, and a large amount of stress is avoided to continue to build up in luminescent layer.In this way, which luminescent layer stress is tired
Defect that is long-pending and generating is reduced, and uniformity of luminance, luminous intensity and the breakdown voltage of luminescent layer are improved, and leakage current situation changes
It is kind, so that the electrical performance of light-emitting component entirety gets a promotion with reliability.
Certainly, the invention may also have other embodiments, without deviating from the spirit and substance of the present invention, ripe
It knows those skilled in the art and makes various corresponding changes and modifications, but these corresponding changes and change in accordance with the present invention
Shape all should fall within the scope of protection of the appended claims of the present invention.
Claims (22)
1. a kind of light-emitting component, includes:
One epitaxial structure includes:
One first type semiconductor layer includes one first sub- semiconductor layer；
One second type semiconductor layer；And
One luminescent layer is set between first type semiconductor layer and second type semiconductor layer；
Wherein, which has a highly doped portion and a low-doped portion for one first type dopant of doping, the height
The doping concentration of the first type dopant of doping is greater than 1017Atomicity/cubic centimetre and be less than or equal to 1018Atomicity/vertical
Square centimetre, the doping concentration of the first type dopant in the low-doped portion is less than or equal to 1017Atomicity/cubic centimetre.
2. light-emitting component according to claim 1, which is characterized in that the doping of the first type dopant in the highly doped portion
The ratio of the doping concentration of the first type dopant in concentration and the low-doped portion is greater than 10.
3. light-emitting component according to claim 1, which is characterized in that the first sub- semiconductor layer is a single layer of semiconductor
Layer.
4. light-emitting component according to claim 1, which is characterized in that the first sub- semiconductor layer with a thickness of 50 nanometers extremely
250 nanometers.
5. light-emitting component according to claim 4, which is characterized in that the thickness in the low-doped portion accounts for the first sub- semiconductor
The 10% to 95% of the thickness of layer.
6. light-emitting component according to claim 5, which is characterized in that the thickness in the low-doped portion accounts for the first sub- semiconductor
The 60% to 95% of the thickness of layer.
7. light-emitting component according to claim 1, which is characterized in that the material of the first sub- semiconductor layer is that ternary is partly led
Body material.
8. light-emitting component according to claim 7, which is characterized in that the ternary semiconductor material is InGaN InGaN.
9. light-emitting component according to claim 1, which is characterized in that first type semiconductor layer further includes one second
Sub- semiconductor layer, the first sub- semiconductor layer are set between the luminescent layer and the second sub- semiconductor layer, which partly leads
The doping concentration of one first type dopant in body layer is greater than the doping concentration of the first type dopant in the highly doped portion.
10. light-emitting component according to claim 9, which is characterized in that first type of the second sub- semiconductor layer adulterates
The doping concentration of object is greater than 1018Atomicity/cubic centimetre and be less than or equal to 1020Atomicity/cubic centimetre.
11. light-emitting component according to claim 9, which is characterized in that the second sub- semiconductor layer with a thickness of 50 nanometers
To 100 nanometers.
12. light-emitting component according to claim 9, which is characterized in that the material of the second sub- semiconductor layer is
AlrInsGa1-r-sN, r≤0, s≤0 and 1≤r+s≤0.
13. light-emitting component according to claim 12, which is characterized in that the material of the second sub- semiconductor layer is gallium nitride
GaN。
14. light-emitting component according to claim 1, which is characterized in that first type semiconductor layer further includes a load
Son provides layer, is set between the first sub- semiconductor layer and the luminescent layer, which provides one first type dopant in layer
Doping concentration be greater than the highly doped portion the first type dopant doping concentration.
15. light-emitting component according to claim 14, which is characterized in that the carrier provides the first type dopant of layer
Doping concentration is greater than 1018Atomicity/cubic centimetre and be less than or equal to 1020Atomicity/cubic centimetre.
16. light-emitting component according to claim 14, which is characterized in that the carrier provide layer with a thickness of 10 nanometers to 30
Nanometer.
17. light-emitting component according to claim 14, which is characterized in that the material that the carrier provides layer is AlrInsGa1-r- sN, r≤0, s≤0 and 1≤r+s≤0.
18. light-emitting component according to claim 17, which is characterized in that the material that the carrier provides layer is gallium nitride GaN.
19. light-emitting component according to claim 14, which is characterized in that the carrier provides in layer and further includes one second
Type dopant, wherein the first type dopant is N-type dopant, and the second type dopant is p-type dopant, and first type
The doping concentration of dopant is greater than the doping concentration of the second type dopant.
20. light-emitting component according to claim 1, which is characterized in that further include:
One first electrode；And
One second electrode；
Wherein the epitaxial structure is set between the first electrode and the second electrode, which is set to the hair
Between photosphere and the first electrode, which further includes a current-diffusion layer, current-diffusion layer setting
Between the first sub- semiconductor layer and the first electrode.
21. light-emitting component described in any claim according to claim 1~20, which is characterized in that first type doping
Object is N-type dopant.
22. light-emitting component described in any claim according to claim 1~20, which is characterized in that the epitaxial structure
Thickness is less than or equal to 6 microns.
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| CN102185062A (en) * | 2011-04-08 | 2011-09-14 | 中山大学 | III-group nitride light-emitting diode (LED) and manufacturing method thereof |
| CN105470358A (en) * | 2016-01-29 | 2016-04-06 | 安徽三安光电有限公司 | Light emitting diode element and production method thereof |
| CN106409998A (en) * | 2016-11-04 | 2017-02-15 | 东莞市联洲知识产权运营管理有限公司 | LED epitaxial wafer having high anti-static capability |
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| CN102185062A (en) * | 2011-04-08 | 2011-09-14 | 中山大学 | III-group nitride light-emitting diode (LED) and manufacturing method thereof |
| CN105470358A (en) * | 2016-01-29 | 2016-04-06 | 安徽三安光电有限公司 | Light emitting diode element and production method thereof |
| CN106409998A (en) * | 2016-11-04 | 2017-02-15 | 东莞市联洲知识产权运营管理有限公司 | LED epitaxial wafer having high anti-static capability |
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