CN108987543B - Light emitting element - Google Patents
Light emitting element Download PDFInfo
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- CN108987543B CN108987543B CN201710403960.6A CN201710403960A CN108987543B CN 108987543 B CN108987543 B CN 108987543B CN 201710403960 A CN201710403960 A CN 201710403960A CN 108987543 B CN108987543 B CN 108987543B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 232
- 239000002019 doping agent Substances 0.000 claims abstract description 78
- 239000010410 layer Substances 0.000 claims description 388
- 238000009792 diffusion process Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 31
- 239000002356 single layer Substances 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 230000007547 defect Effects 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 11
- 230000007480 spreading Effects 0.000 description 11
- 238000003892 spreading Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
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- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000003578 releasing effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
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- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting element, comprising an epitaxial structure, wherein the epitaxial structure comprises a first type semiconductorA body layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer comprises a first sub-semiconductor layer, the light-emitting layer is arranged between the first type semiconductor layer and the second type semiconductor layer, the first sub-semiconductor layer is provided with a high doping part and a low doping part which are doped with first type dopants, and the doping concentration of the high doping part is more than 1017Atomic number/cubic centimeter of 10 or less18Atomic number/cubic centimeter, and doping concentration of low-doped part is less than or equal to 1017Atomic number per cubic centimeter.
Description
Technical Field
The present invention relates to a light emitting device, and more particularly, to a light emitting diode having a high doping concentration portion and a low doping concentration portion.
Background
Light Emitting Diodes (LEDs) are widely used in various fields as high-efficiency light emitting elements. In the conventional method for manufacturing a light emitting diode, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer are sequentially formed on a substrate by an epitaxial method, so as to obtain an epitaxial structure of the light emitting diode.
In the epitaxial structure of the light emitting diode, since the substrate, the N-type semiconductor layer, the light emitting layer and the P-type semiconductor layer are made of different materials, lattice mismatch (lattice mismatch) between the materials causes a large amount of stress (stress) to be accumulated at each junction. Furthermore, when the semiconductor layer is doped with a large amount of dopants, the dopants also stress and interfere with the normal alignment of the crystal lattice of the semiconductor layer, resulting in stress accumulation in the crystal lattice. When the stress accumulated at the junction or in the crystal lattice is too high, defects (defects) are formed at the junction or in the crystal lattice of the epitaxial structure to release the accumulated stress. However, the existence of these defects will cause the problems of increased leakage current or decreased breakdown voltage of the led, resulting in the decrease of the reliability of the led.
Disclosure of Invention
The present invention is directed to a light emitting device, and more particularly to a light emitting device with a stress adjusting structure for reducing the defects caused by stress accumulation and further solving the problem of reliability degradation of a light emitting diode due to the defects.
According to an embodiment of the invention, a light emitting device includes an epitaxial structure. The epitaxial structure comprises a first type semiconductor layer, a second type semiconductor layer and a light emitting layer, wherein the first type semiconductor layer comprises a first sub-semiconductor layer, the light emitting layer is arranged between the first type semiconductor layer and the second type semiconductor layer, the first sub-semiconductor layer is provided with a high doping part and a low doping part which are doped with a first type dopant, and the doping concentration of the first type dopant of the high doping part is more than 1017Atomic number/cubic centimeter of 10 or less18The doping concentration of the first type dopant of the low doping part is less than or equal to 1017Atomic number per cubic centimeter.
In summary, the light emitting device according to an embodiment of the invention has the high doping portion and the low doping portion with large doping concentration difference, so as to reduce stress accumulation in the epitaxial structure, and further reduce the number of defects in the epitaxial structure. Therefore, the problem of the reliability reduction of the light-emitting element caused by the defects is solved.
The foregoing summary of the invention, as well as the following detailed description of the embodiments, is provided to illustrate and explain the principles and spirit of the invention, and to provide further explanation of the invention as claimed.
Drawings
Fig. 1 is a schematic cross-sectional view of a light-emitting device according to a first embodiment of the invention.
Fig. 2 is a schematic view of a doping concentration profile according to a first embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a light-emitting device according to a second embodiment of the invention.
Fig. 4 is a schematic view of a doping concentration profile according to a second embodiment of the present invention.
Fig. 5 is a cross-sectional view of an epitaxial structure and a substrate according to a second embodiment of the invention.
Fig. 6 is a schematic cross-sectional view of a light-emitting device according to a third embodiment of the invention.
Fig. 7 is a schematic cross-sectional view of a light-emitting device according to a fourth embodiment of the invention.
fig. 8 is a schematic cross-sectional view of a light-emitting device according to a fifth embodiment of the invention.
Fig. 9 is a schematic cross-sectional view of a light-emitting element according to a sixth embodiment of the invention.
Fig. 10 is a schematic cross-sectional view of a light-emitting element according to a seventh embodiment of the invention.
wherein the reference numerals
1. 2, 3, 4, 5, 6, 7 light emitting element
100 first electrode
200 second electrode
300 light emitting layer
400 first type semiconductor layer
410 first sub-semiconductor layer
411 high doped part
412 low doped portion
420 second sub-semiconductor layer
430 carrier supply layer
440 current diffusion layer
500 second type semiconductor layer
600 base plate
700 buffer layer
A through hole
B insulating layer
Thickness of T
Detailed Description
The detailed features and advantages of the present invention are described in detail in the following embodiments, which are sufficient for those skilled in the art to understand the technical contents of the present invention and to implement the present invention, and the related objects and advantages of the present invention can be easily understood by those skilled in the art from the disclosure, claims and drawings of the present specification. The following examples are intended to illustrate aspects of the present invention in further detail, but are not intended to limit the scope of the invention in any way.
first, a light emitting device 1 according to a first embodiment of the invention is described with reference to fig. 1 and 2. Fig. 1 is a schematic cross-sectional view of a light-emitting device according to a first embodiment of the invention. Fig. 2 is a schematic view of a doping concentration profile according to a first embodiment of the present invention. The light emitting element 1 according to the first embodiment of the present invention includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer 400, a second type semiconductor layer 500, and a light emitting layer 300 disposed between the first type semiconductor layer 400 and the second type semiconductor layer 500. The thickness T of the epitaxial structure is preferably not more than 6 μm, and the thickness of the epitaxial structure is usually more than 1 μm, and too thick or too thin will affect the yield of the subsequent process. The maximum width dimension of the light emitting element 1 is between 1 and 100 micrometers, preferably between 3 and 30 micrometers, that is, the light emitting element 1 in the first embodiment is a Micro light emitting element (Micro LED) of a micron scale.
The first type semiconductor layer 400 and the second type semiconductor layer 500 have different doping types. For example, the first-type semiconductor layer 400 is mainly doped with a first-type dopant, and the first-type dopant includes a group IVA element, such as silicon (Si), carbon (C) or germanium (Ge), so that the first-type semiconductor layer 400 is an N-type doped semiconductor layer. The second type semiconductor layer 500 is mainly doped with a second type dopant, which includes a group IIA element, such as magnesium (Mg), so that the second type semiconductor layer is a P-type doped semiconductor layer. The light emitting device 1 according to the first embodiment of the present invention will be described below with the first type semiconductor layer 400 being an N-type doped semiconductor layer and the second type semiconductor layer 500 being a P-type doped semiconductor layer.
The light-emitting layer 300 is, for example, a Multiple Quantum Well (MQW) structure. The material of the light-emitting layer 300 is, for example, InyGa1-yn, 0 ≦ y < 1. In the first embodiment of the present invention, the light emitting layer 300 includes a multiple quantum well structure composed of multiple layers of indium gallium nitride (InGaN) and multiple layers of gallium nitride (GaN), but not limited thereto. The thickness of the light emitting layer 300 is between 0.1 micron and 1 micron, but not limited thereto.
The first-type semiconductor layer 400 includes a first sub-semiconductor layer 410. The material of the first sub-semiconductor layer 410 is a ternary semiconductor material, such as InxGa1-xN, 0 < X < 1, but not limited thereto. The thickness of the first sub-semiconductor layer 410 is, for example, 50 nanometers (nm) to 250 nm, and an excessive thickness will affect the epitaxial quality of the light emitting device, but not limited thereto. In a first embodiment of the invention, the first sub-semiconductorthe material of the body layer 410 is indium gallium nitride (InGaN), which has better stress relief effect than other materials. The thickness of the first sub-semiconductor layer 410 is 200 nm. In other embodiments of the present invention, the thickness of the first sub-semiconductor layer may be 75 nm, 100 nm, 150 nm, or 225 nm. Specifically, in the first embodiment of the present invention, the first sub-semiconductor layer 410 is a single-layer semiconductor layer. In detail, each region in the first sub semiconductor layer 410 has uniform brightness in an image of an electron microscope or a Secondary Ion Mass Spectrometer (SIMS).
Referring to fig. 2, the first sub-semiconductor layer 410 has at least one high-doped portion 411 and at least one low-doped portion 412 doped with the first type dopant. The first type dopant is the main dopant in the first sub-semiconductor layer 410. Wherein the doping concentration of the low doped part 412 is less than or equal to 1017Atomic number per cubic centimeter (atoms/cm)3) Preferably, the doping concentration of the low doping portion 412 is less than or equal to 5 × 1016Atomic number/cubic centimeter, and more preferably, the doping concentration of the low-doped portion 412 is 10 or less16Atomic number per cubic centimeter. Specifically, the doping concentration of the low doping portion 412 may be close to that of the undoped portion, and is not limited herein. The doping concentration of the high doping portion 411 is more than 1017atomic number/cubic centimeter of 10 or less18The doping concentration of the highly doped portion 411 is preferably greater than 5 × 1017Atomic number/cubic centimeter of 10 or less18The doping concentration of the highly doped portion 411 is more than 8 × 1017Atomic number/cubic centimeter of 10 or less18Atomic number per cubic centimeter. Here, the ratio of the doping concentration of the high doping portion 411 to the doping concentration of the low doping portion 412 is greater than 10. Preferably, the ratio of the doping concentration of the high doping portion 411 to the doping concentration of the low doping portion 412 is greater than or equal to 102. By having the high doping portion 411 and the low doping portion 412 with a large difference in doping concentration, the stress generated during epitaxy is reduced. In particular, the doping concentration of the high doping portion 411 and the doping of the low doping portion 412 are describedThe ratio of the concentrations is, for example, a comparison between the concentration at which the doping concentration in the high doping portion 411 is the highest and the concentration at which the doping concentration in the low doping portion 412 is the lowest. In the light emitting device according to the first embodiment of the present invention, the first type semiconductor layer 410 is an N type semiconductor layer, the doping concentrations of the high doped portion 411 and the low doped portion 412 of the first sub-semiconductor layer 410 are both the doping concentrations of the first type dopant, and the first type dopant is silicon, but not limited thereto.
In the first embodiment of the invention, the low-doped portion 412 is disposed between the high-doped portion 411 and the light emitting layer 300, but not limited thereto. In other embodiments of the present invention, the high-doped portion may be disposed between the low-doped portion and the light emitting layer.
In the first embodiment of the present invention, the number of the high-doped portions and the low-doped portions is one. Here, in a vertical light emitting device 1 direction, the low doped portion 412 covers the high doped portion 411, that is, the low doped portion 412 and the high doped portion 411 are formed at different stages during the epitaxial growth of the first sub-semiconductor layer 410, but not limited thereto. In the first embodiment of the present invention, based on the direction from the surface of the first type semiconductor layer 400 contacting the light emitting layer 300 to the direction away from the light emitting layer 300, the portions with the thicknesses D1 to D4 correspond to the first type semiconductor layer 400, the portions with the thicknesses D2 to D3 correspond to the low doped portion 412, and the portions with the thicknesses D3 to D4 correspond to the high doped portion 411. The low-doped portion 412 is disposed between the high-doped portion 411 and the light emitting layer 300, but not limited thereto. In other embodiments of the present invention, the high-doped portion 411 may be disposed between the low-doped portion 412 and the light emitting layer 300.
In the first embodiment of the present invention, the thickness (D2-D3) of the lowly doped region 412 accounts for 10% to 95% of the thickness (D1-D4) of the first sub-semiconductor layer 410. Preferably, the thickness of the low doping part 412 accounts for 60% to 95% of the thickness of the first sub-semiconductor layer 410. More preferably, the thickness of the low doping part 412 accounts for 80% to 95% of the thickness of the first sub-semiconductor layer 410. The higher the ratio of the thickness of the low-doped portion 412 to the thickness of the first sub-semiconductor layer 410 is, the better the electrical property of the light emitting device 1 of the present invention can be obtained. In other embodiments of the present invention, the first sub-semiconductor layer may have a plurality of high-doped portions and a plurality of low-doped portions, and the plurality of high-doped portions and the plurality of low-doped portions are arranged in a staggered manner, and a total thickness of the low-doped portions accounts for 10% to 95% of a thickness of the first sub-semiconductor layer, preferably a total thickness of the low-doped portions accounts for 60% to 95% of the thickness of the first sub-semiconductor layer, and more preferably a total thickness of the low-doped portions accounts for 80% to 95% of the thickness of the first sub-semiconductor layer.
The second-type semiconductor layer 500 is disposed on a side of the light emitting layer 300 away from the first-type semiconductor layer 400. The material of the second type semiconductor layer 500 may include a group iii-v nitride material, such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN). The material of the second-type semiconductor layer 500 is preferably gallium nitride (GaN) or aluminum gallium nitride (AlGaN). The second type dopant is the main dopant in the second type semiconductor layer 500. In the first embodiment of the present invention, the second type semiconductor layer 500 is a P-type semiconductor layer, and the second type dopant is magnesium, but not limited thereto.
Since the first sub-semiconductor layer 410 has both the high-doped portion 411 and the low-doped portion 412 in a single layer, and the doping concentration of the high-doped portion 411 and the doping concentration of the low-doped portion 412 have a larger difference, the lattice arrangement of the low-doped portion 412 is disturbed by the dopant to a lower extent than the lattice arrangement of the high-doped portion 412. As a result, the stress accumulated in the crystal lattice of the low-doped portion 412 is smaller than the stress accumulated in the crystal lattice of the high-doped portion 411, and the stress accumulated in the epitaxial structure is buffered and released in the low-doped portion 412 of the first sub-semiconductor layer 410, thereby preventing a large amount of stress from being continuously accumulated in the light-emitting layer 300. The higher the ratio of the thickness of the low-doped portion 412 to the thickness of the first sub-semiconductor layer 410, the better the buffering and releasing effect of the low-doped portion 412 on stress. By the low-doped portion 412 disposed in the first sub-semiconductor layer 410, defects generated by stress accumulation in the light-emitting layer 300 are reduced, such that the defect density in the light-emitting layer 300 is, for example, between 104/cm2To 108/cm2In the meantime. Therefore, the luminous uniformity, luminous intensity and breakdown voltage of the luminous element 1 are improved, the leakage current condition is improved, and the whole electrical performance and the integral performance of the luminous element can be improvedThe reliability is improved.
Next, a light emitting device according to a second embodiment of the invention is described with reference to fig. 3 to 5. Fig. 3 is a schematic cross-sectional view of a light-emitting device according to a second embodiment of the invention. Fig. 4 is a schematic view of a doping concentration profile according to a second embodiment of the present invention. Fig. 5 is a cross-sectional view of an epitaxial structure and a substrate according to a second embodiment of the invention. The light emitting device includes a first electrode 100, a second electrode 200, and an epitaxial structure disposed between the first electrode 100 and the second electrode 200. The first electrode 100 and the second electrode 200 are, for example, high work function metals such as platinum, nickel, titanium, gold, chromium, silver, alloys thereof, combinations thereof, metal oxides such as indium tin oxide and zinc oxide, or conductive non-metallic materials such as conductive polymers, graphite, graphene, and black phosphorus. The high work function metal is, for example, a metal material having a work function of not less than 4.5 electron volts. The light emitting device 2 according to the second embodiment of the invention is a vertical light emitting device, and the epitaxial structure is disposed between the first electrode 100 and the second electrode 200, but not limited thereto. In other embodiments of the present invention, the light emitting device can also be a horizontal light emitting device or other types of light emitting devices. The maximum width dimension of the light emitting element 2 is between 1 and 100 micrometers, preferably between 3 and 30 micrometers, that is, the light emitting element 2 in the second embodiment is a Micro light emitting element (Micro LED) of a micron scale. Furthermore, a maximum peak current density of an external quantum efficiency curve of the light emitting device 2 of the second embodiment of the present invention is preferably between 0.01A/cm2To 2A/cm2In the meantime. That is, the light-emitting element of the present invention is suitable for operation at low current density.
Referring to fig. 3, the epitaxial structure includes a light emitting layer 300, a first type semiconductor layer 400 disposed between the light emitting layer 300 and the first electrode 100, and a second type semiconductor layer 500 disposed between the light emitting layer 300 and the second electrode 200. The thickness T of the epitaxial structure is preferably not more than 6 μm, and the thickness T of the epitaxial structure is usually larger than 1 μm, and too thick or too thin will affect the yield of the subsequent process. The light emitting device 2 according to the second embodiment of the present invention will be described below with the first electrode being 100 an N-type electrode, the second electrode being 200 a P-type electrode, the first type semiconductor layer 400 being an N-type doped semiconductor layer, and the second type semiconductor layer 500 being a P-type doped semiconductor layer.
The light-emitting layer 300 of the second embodiment of the invention is similar to the light-emitting layer 300 of the first embodiment of the invention, and the description of the light-emitting layer 300 is omitted here for brevity.
The first type semiconductor layer 400 further includes a second sub-semiconductor layer 420 disposed between the first electrode 100 and the first sub-semiconductor layer 410, a carrier providing layer 430 disposed between the light emitting layer 300 and the first sub-semiconductor layer 410, and a current spreading layer 440 disposed on a side of the second sub-semiconductor layer 420 away from the first sub-semiconductor layer 410, in addition to the first sub-semiconductor layer 410.
The material of the first sub-semiconductor layer 410 is similar to that of the first sub-semiconductor layer 410 of the first embodiment of the present invention, and is not described herein again. Referring to fig. 4, the first sub-semiconductor layer 410 has at least one highly doped portion 411 and at least one lowly doped portion 412. In the second embodiment of the present invention, based on the direction from the surface of the second-type semiconductor layer 500 far away from the light emitting layer 300 to the first-type semiconductor layer 400, the portions with the thicknesses D1 to D4 correspond to the first-type semiconductor layer 400, the portions with the thicknesses D2 to D3 correspond to the low-doped portion 412, and the portions with the thicknesses D3 to D4 correspond to the high-doped portion 411. The portions of the thicknesses D5 through D6 correspond to the light emitting layer 300. The portions with the thicknesses D6-D1 correspond to the carrier providing layer 430. The portion of the thicknesses D4 through D7 corresponds to the second sub-semiconductor layer 420. The portion of thickness D7 facing away from thickness D4 is current spreading layer 440.
In the second embodiment of the present invention, the high doping portion 411 is disposed between the low doping portion 412 and the second semiconductor layer 420, but not limited thereto. In other embodiments of the present invention, the low doped region may be disposed between the high doped region and the second type semiconductor layer. The doping concentration relationship and the thickness relationship of the high-doped portion 411 and the low-doped portion 412 in the second embodiment of the present invention are similar to those of the high-doped portion 411 and the low-doped portion 412 in the first embodiment of the present invention, and therefore, the description thereof is omitted.
The second sub-semiconductor layer 420 is disposed between the first electrode 100 and the first sub-semiconductor layer 410. The material of the second sub-semiconductor layer 420 is, for example, AlrInsGa1-r-sN, r ≧ 0, s ≧ 0, and 1 ≧ r + s ≧ 0, but not limited thereto. The thickness of the second sub-semiconductor layer 420 is, for example, 50 nanometers (nm) to 100 nm, but not limited thereto. In the second embodiment of the present invention, the material of the second sub-semiconductor layer 420 is gallium nitride (GaN), and the thickness of the second sub-semiconductor layer 420 is 80 nm. In other embodiments of the present invention, the material of the second sub-semiconductor layer is InGaN, AlGaN, or AlInGaN. Specifically, the second sub-semiconductor layer 420 may be a single semiconductor layer.
The second sub-semiconductor layer 420 includes the first type dopant therein. In the second embodiment of the present invention, the second sub-semiconductor layer 420 is an N-type semiconductor layer, and the first type dopant is silicon, but not limited thereto. The doping concentration of the first type dopant in the second sub-semiconductor layer 420 is higher than the doping concentration of the first type dopant in the high-doped portion 411. Further, in the second sub-semiconductor layer 420, the doping concentration of the first type dopant is greater than 1018Atomic number/cubic centimeter of 10 or less20Atomic number/cubic centimeter, preferably, the doping concentration of the first type dopant is greater than 1018Atomic number/cubic centimeter of 10 or less19Atomic number per cubic centimeter. In the second embodiment of the present invention, the position of the second sub-semiconductor layer 420 corresponds to the portion of the thicknesses D4 through D7 in fig. 4. Since the doping concentration of the second sub-semiconductor layer 420 is higher than that of the highly doped portion 411 in the first sub-semiconductor layer 410, the second sub-semiconductor layer 420 may further increase the number of carriers in the first type semiconductor layer 400, thereby further enhancing the light emitting intensity of the light emitting layer 300.
The carrier supply layer 430 is disposed between the light emitting layer 300 and the first sub-semiconductor layer 410. The carrier providing layer 430 is made of Al, for examplerInsGa1-r-sN, r ≧ 0, s ≧ 0, and 1 ≧ r + s ≧ 0, but not limited thereto. The carrier providing layer 430 has a thickness of, for example, 10 nanometers (nm) to 30 nm, and an excessive thickness may cause defects in the subsequently epitaxially grown semiconductor layerAnd (5) sinking. In the second embodiment of the present invention, the material of the carrier supplying layer 430 is gallium nitride (GaN), and the thickness of the carrier supplying layer 430 is 20 nm. In other embodiments of the present invention, the carrier providing layer is made of InGaN, AlGaN, or AlInGaN. Specifically, the carrier supply layer 430 may be a single semiconductor layer.
The carrier providing layer 430 contains a first type dopant and a second type dopant, and the doping concentration of the first type dopant is greater than that of the second type dopant. In the second embodiment of the present invention, the carrier providing layer 430 is an N-type semiconductor layer, the first type dopant is silicon, and the second type dopant is magnesium, but not limited thereto. The doping concentration of the first-type dopant in the carrier supply layer 430 is higher than that of the first-type dopant in the highly doped portion 411. Further, in the carrier supply layer 430, the doping concentration of the first type dopant is greater than 1018Atomic number/cubic centimeter of 10 or less20Atomic number/cubic centimeter, preferably, the doping concentration of the first type dopant is greater than 1018Atomic number/cubic centimeter of 10 or less19Atomic number per cubic centimeter. The doping concentration of the second type dopant in the carrier providing layer 430 is less than 1018Atomic number per cubic centimeter. In other embodiments of the present invention, the carrier-providing layer may have only the first type dopant therein. Since the doping concentration of the first-type dopant in the carrier providing layer 430 is higher than that of the first-type dopant in the high doping portion 411, the carrier providing layer 430 may further increase the number of carriers in the first-type semiconductor layer 400, thereby further enhancing the light emitting intensity of the light emitting layer 300.
The current diffusion layer 440 is disposed on a side of the second sub-semiconductor layer 420 away from the first sub-semiconductor layer. The material of the current diffusion layer 440 is AlrInsGa1-r-sN, r ≧ 0, s ≧ 0, and 1 ≧ r + s ≧ 0. The thickness of the current diffusion layer 440 is, for example, 1 micrometer (μm) to 3 micrometers, but is not limited thereto. The doping concentration of the first type dopant in the current diffusion layer 440 is different from the doping concentration of the first type dopant in the second sub-semiconductor layer 420. The doping concentration of the first type dopant in most of the current diffusion layer 440 is preferably greater than that of the first type dopant in the second sub-semiconductor layer 420The doping concentration of the type dopant. In the second embodiment of the present invention, the material of the current diffusion layer 440 is GaN, the current diffusion layer 440 is an N-type doped semiconductor layer with a thickness of 2 μm, the second type dopant is silicon, and the doping concentration of the second type dopant is greater than 1019The number of atoms per cubic centimeter is not limited thereto.
In the second embodiment of the present invention, the current spreading layer 440 is disposed between the first electrode 100 and the second sub-semiconductor layer 420, but not limited thereto. In other embodiments of the present invention, the first electrode and the second sub-semiconductor layer may also be disposed on the same side of the current spreading layer. With the help of the current spreading layer 440, the current from the first electrode 100 into the current spreading layer 440 can be more uniformly distributed into the first-type semiconductor layer 400, thereby making the light emitting intensity distribution of the light emitting layer 300 more uniform.
In the second embodiment of the present invention, the first type dopants doped in the first sub-semiconductor layer 410, the second sub-semiconductor layer 420, the carrier providing layer 430 and the current diffusion layer 440 are all silicon, but not limited thereto. In other embodiments of the present invention, the first type dopants doped in the first sub-semiconductor layer, the second sub-semiconductor layer, the carrier providing layer and the current diffusion layer may be different first type dopants, and the first type dopants may be silicon or carbon.
The second sub-semiconductor layer 420 and the current diffusion layer 440 are doped with a large amount of dopants, so that the lattice arrangement of the second sub-semiconductor layer 420 and the current diffusion layer 440 is disturbed by the dopants, resulting in stress accumulation in the lattice of the second sub-semiconductor layer 420 and the current diffusion layer 440. Since the difference between the doping concentration of the high-doped portion 411 and the doping concentration of the low-doped portion 412 in the first sub-semiconductor layer 410 is large, the lattice arrangement of the low-doped portion 412 is disturbed by the dopant to a lesser extent than the lattice arrangement of the high-doped portion 411. As such, the stress accumulated in the crystal lattice of the low-doped portion 412 is smaller than the stress accumulated in the crystal lattice of the high-doped portion 411.
The stress accumulated in the second sub-semiconductor layer 420 and the current spreading layer 440 is buffered and released in the low doped portion 412 of the first sub-semiconductor layer 410, thereby preventing a large amount of stress from being continuously accumulated in the carrier providing layer 430 and the light emitting layer 300. The higher the ratio of the thickness of the low-doped portion 412 to the thickness of the first sub-semiconductor layer 410, the better the buffering and releasing effect of the low-doped portion 412 on stress. Through the low-doped portion 412 disposed in the first sub-semiconductor layer 410, defects generated by stress accumulation in the light-emitting layer 300 are reduced, the light-emitting uniformity, the light-emitting intensity, and the breakdown voltage of the light-emitting device 2 are improved, and the leakage current is improved, so that the overall electrical performance of the light-emitting device is improved.
The second-type semiconductor layer 500 is disposed on a side of the light emitting layer 300 away from the first-type semiconductor layer 400. The material of the second type semiconductor layer 500 may include a group iii-v nitride material such as gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN). The material of the second-type semiconductor layer 500 is preferably gallium nitride (GaN) or aluminum gallium nitride (AlGaN). In the second embodiment of the present invention, the second type semiconductor layer 500 is a P type semiconductor layer, the second type dopant is Mg, and the doping concentration of the second type dopant is between 1019Atomic number/cubic centimeter to 1020The number of atoms per cubic centimeter is not limited thereto. In the second embodiment of the present invention, the second electrode 200 is disposed on a side of the second type semiconductor layer 500 away from the light emitting layer 300, but not limited thereto.
The epitaxial structure is disposed on the buffer layer 700 of the substrate 600 by a semiconductor process. Fig. 5 is a schematic diagram illustrating a stack sequence of the substrate 600, the buffer layer 700 and the epitaxial structure. In detail, the second sub-semiconductor layer 420, the first sub-semiconductor layer 410, the carrier providing layer 430, the light emitting layer 300 and the second type semiconductor layer 500 are sequentially disposed one by one on the side of the buffer layer 700 away from the substrate 600 to obtain the epitaxial structure in the second embodiment of the present invention.
The material of the substrate 600 is, for example, sapphire, silicon carbide, glass, ceramic, or other materials with lattice structures matching with the lattice structure of the buffer layer 700, but not limited thereto. In other embodiments of the present invention, the current spreading layer may be formed directly on the substrate when the lattice structure of the substrate material matches the lattice structure of the current spreading layer.
The buffer layer 700 is disposed on the surface of the substrate 600. The buffer layer 700 is made of, for example, gallium nitride (GaN) that is not intentionally doped, but not limited thereto. The lattice matching degree between the lattice structure of the buffer layer 700 and the lattice structure of the substrate 600, and the lattice matching degree between the lattice structure of the buffer layer 700 and the lattice structure of the current diffusion layer 440 are higher than those between the lattice structure of the substrate 600 and the lattice structure of the current diffusion layer 440. Therefore, the lattice arrangement of the current diffusion layer 440 is relatively regular, the number of defects in the current diffusion layer 440 is reduced, and the current distribution in the current diffusion layer 300 is relatively uniform. In an embodiment not shown, a nucleation layer, such as aluminum nitride (AlN), not intentionally doped to match the lattice structure of the substrate 600 may be further included between the buffer layer 700 and the substrate 600 to further align the lattice of the subsequent epitaxial structure.
In the light emitting device 2 according to the second embodiment of the present invention, the first type semiconductor layer 400 is an N-type doped semiconductor layer, the concentration of the dopant in the first type semiconductor layer 400 is the concentration of the N-type dopant, the second type semiconductor 500 is a P-type doped semiconductor layer, the first electrode 100 is an N-type electrode, and the second electrode 200 is a P-type electrode, but the invention is not limited thereto. In another embodiment of the light emitting device of the present invention, the first type semiconductor layer is a P-type doped semiconductor layer, the concentration of the dopant in the first type semiconductor layer is a concentration of a P-type dopant, the second type semiconductor layer is an N-type doped semiconductor layer, the first electrode is a P-type electrode, and the second electrode is an N-type electrode.
Next, a light-emitting device 3 according to a third embodiment of the present invention will be described with reference to fig. 6. Fig. 6 is a schematic cross-sectional view of a light-emitting device according to a third embodiment of the invention. The light emitting device 3 of the third embodiment of the present invention is similar to the light emitting device 2 of the second embodiment of the present invention, but the light emitting device 3 of the third embodiment of the present invention is not provided with the second sub-semiconductor layer and the carrier providing layer.
in detail, the light emitting device 3 according to the third embodiment of the present invention is a vertical light emitting device, and includes a first electrode 100, a second electrode 200, a light emitting layer 300 disposed between the first electrode 100 and the second electrode 200, a first sub-semiconductor layer 410 disposed between the first electrode 100 and the light emitting layer 300, a current diffusion layer 440 disposed between the first electrode 100 and the first sub-semiconductor layer 410, and a second type semiconductor layer 500 disposed between the second electrode 200 and the light emitting layer 300.
Next, a light emitting device 4 according to a fourth embodiment of the present invention will be described with reference to fig. 7. Fig. 7 is a schematic cross-sectional view of a light-emitting device according to a fourth embodiment of the invention. The light emitting device 4 according to the fourth embodiment of the present invention is similar to the light emitting device 2 according to the second embodiment of the present invention, but the light emitting device 4 according to the fourth embodiment of the present invention is not provided with a carrier providing layer.
In detail, the light emitting device 4 of the fourth embodiment of the present invention is a vertical light emitting device, and includes a first electrode 100, a second electrode 200, a light emitting layer 300 disposed between the first electrode 100 and the second electrode 200, a first sub-semiconductor layer 410 disposed between the first electrode 100 and the light emitting layer 300, a second sub-semiconductor layer 420 disposed between the first electrode 100 and the first sub-semiconductor layer 410, a current diffusion layer 440 disposed between the first electrode 100 and the second sub-semiconductor layer 420, and a second type semiconductor layer 500 disposed between the second electrode 200 and the light emitting layer 300.
Next, a light emitting device 5 according to a fifth embodiment of the present invention is described with reference to fig. 8. Fig. 8 is a schematic cross-sectional view of a light-emitting device according to a fifth embodiment of the invention. The light-emitting element 5 according to the fifth embodiment of the present invention is similar to the light-emitting element 2 according to the second embodiment of the present invention, but the light-emitting element 4 according to the fourth embodiment of the present invention is not provided with the second sub-semiconductor layer.
In detail, the light emitting device 5 of the fifth embodiment of the invention is a vertical light emitting device, and includes a first electrode 100, a second electrode 200, a light emitting layer 300 disposed between the first electrode 100 and the second electrode 200, a first sub-semiconductor layer 410 disposed between the first electrode 100 and the light emitting layer 300, a carrier providing layer 430 disposed between the light emitting layer 300 and the first sub-semiconductor layer 410, a current diffusion layer 440 disposed between the first electrode 100 and the first sub-semiconductor layer 410, and a second type semiconductor layer 500 disposed between the second electrode 200 and the light emitting layer 300.
Next, a light-emitting device 6 according to a sixth embodiment of the present invention will be described with reference to fig. 9. Fig. 9 is a schematic cross-sectional view of a light-emitting element according to a sixth embodiment of the invention. The light emitting element 6 of the sixth embodiment of the present invention is similar to the light emitting element 2 of the second embodiment of the present invention.
In detail, the light emitting device 6 of the sixth embodiment of the invention is a horizontal light emitting device, and includes a current diffusion layer 440, a second type semiconductor layer 500, a light emitting layer 300 disposed between the current diffusion layer 440 and the second type semiconductor layer 500, a first sub-semiconductor layer 410 disposed between the current diffusion layer 440 and the light emitting layer 300, a second sub-semiconductor layer 420 disposed between the current diffusion layer 440 and the first sub-semiconductor layer, a carrier providing layer 430 disposed between the light emitting layer 300 and the first sub-semiconductor layer 410, a first electrode 100 connected to the current diffusion layer 440, and a second electrode 200 connected to the second type semiconductor layer 500. The first electrode 100 and the second sub-semiconductor layer 420 are disposed on the same side of the current spreading layer 440. Further, the second sub-semiconductor layer 420 is disposed and covers a portion of the surface of the current diffusion layer 440 facing the light emitting layer 300, and the first electrode 100 is disposed and covers another portion of the surface of the current diffusion layer 440 facing the light emitting layer 300.
Next, a light-emitting device 7 according to a seventh embodiment of the present invention will be described with reference to fig. 10. Fig. 10 is a schematic cross-sectional view of a light-emitting element according to a seventh embodiment of the invention. The light-emitting element 7 of the seventh embodiment of the present invention is similar to the light-emitting element 2 of the second embodiment of the present invention.
The light emitting device includes a current diffusion layer 440, a second type semiconductor layer 500, a light emitting layer 300 disposed between the current diffusion layer 440 and the second type semiconductor layer 500, a first sub-semiconductor layer 410 disposed between the current diffusion layer 440 and the light emitting layer 300, a second sub-semiconductor layer 420 disposed between the current diffusion layer 440 and the first sub-semiconductor layer, a carrier providing layer 430 disposed between the light emitting layer 300 and the first sub-semiconductor layer 410, a first electrode 100 connected to the current diffusion layer 440, and a second electrode 200 connected to the second type semiconductor layer 500. The first electrode 100 and the second sub-semiconductor layer 420 are disposed on the same side of the current spreading layer 440.
In detail, the epitaxial junctionThe structure has a through hole a penetrating through the second sub-semiconductor layer 420, the first sub-semiconductor layer 410, the carrier providing layer 430, the light emitting layer 300 and the second type semiconductor layer 500, and the current diffusion layer 440 is exposed in the through hole a. An insulating layer B is arranged on the side wall surface of the through hole A. The material of the insulating layer B is, for example, a dielectric film or a polymer material. For example, the material of the insulating layer B is, for example, alumina (Al)2O3) Silicon oxide (SiO)2) Or silicon nitride (Si)3N4) And combinations of the foregoing materials. Specifically, the young's modulus of the material of the insulating layer B is smaller than that of any one of the epitaxial structure, the first electrode 100 and the second electrode 200, so that the insulating material with a larger deformation degree can be used as a buffer during bonding when the light emitting element 7 is subsequently bonded to an application device (not shown), such as a display backplane. The first electrode 100 is disposed and electrically connected to the current diffusion layer 440 exposed in the through hole a, and the first electrode 100 penetrates the second sub-semiconductor layer 420, the first sub-semiconductor layer 410, the carrier providing layer 430, the light emitting layer 300 and the second type semiconductor layer 500. The first electrode 100 is electrically insulated from the second sub-semiconductor layer 420, the first sub-semiconductor layer 410, the carrier providing layer 430, the light emitting layer 300 and the second type semiconductor layer 500 by the insulating layer B.
In summary, in the light emitting device of the present invention, the difference between the doping concentration of the high doping portion and the doping concentration of the low doping portion is large, so that the stress accumulated in the low doping portion is smaller than that in the high doping portion, and further, the stress accumulated in the first type semiconductor layer is buffered and released in the low doping portion, thereby preventing a large amount of stress from being continuously accumulated in the light emitting layer. Therefore, the defects of the light-emitting layer caused by stress accumulation are reduced, the light-emitting uniformity, the light-emitting intensity and the breakdown voltage of the light-emitting layer are improved, the leakage current condition is improved, and the overall electrical performance and the reliability of the light-emitting element are improved.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (22)
1. A light emitting element comprising:
An epitaxial structure comprising:
A first type semiconductor layer including a first sub-semiconductor layer;
A second type semiconductor layer; and
A light emitting layer disposed between the first type semiconductor layer and the second type semiconductor layer;
Wherein the first sub-semiconductor layer has a high-doped portion and a low-doped portion doped with a first type dopant, and the doping concentration of the first type dopant in the high-doped portion is greater than 1017atomic number/cubic centimeter of 10 or less18Atomic number/cubic centimeter, and the doping concentration of the first type dopant of the low doping part is less than 1017Atomic number per cubic centimeter.
2. The light-emitting device according to claim 1, wherein a ratio of a doping concentration of the first type dopant of the high-doped portion to a doping concentration of the first type dopant of the low-doped portion is greater than 10.
3. The light-emitting device according to claim 1, wherein the first sub-semiconductor layer is a single-layer semiconductor layer.
4. The light-emitting element according to claim 1, wherein a thickness of the first sub-semiconductor layer is 50 nm to 250 nm.
5. The light-emitting element according to claim 4, wherein a thickness of the low-doped portion is 10% to 95% of a thickness of the first sub-semiconductor layer.
6. The light-emitting element according to claim 5, wherein a thickness of the low-doped portion is 60% to 95% of a thickness of the first sub-semiconductor layer.
7. The light-emitting element according to claim 1, wherein a material of the first sub-semiconductor layer is a ternary semiconductor material.
8. The light-emitting device according to claim 7, wherein the ternary semiconductor material is InGaN.
9. The light-emitting device according to claim 1, wherein the first type semiconductor layer further comprises a second sub-semiconductor layer, the first sub-semiconductor layer is disposed between the light-emitting layer and the second sub-semiconductor layer, and a doping concentration of a first type dopant in the second sub-semiconductor layer is greater than a doping concentration of the first type dopant in the highly doped portion.
10. The light-emitting device according to claim 9, wherein the doping concentration of the first type dopant in the second sub-semiconductor layer is greater than 1018Atomic number/cubic centimeter of 10 or less20Atomic number per cubic centimeter.
11. The light-emitting element according to claim 9, wherein a thickness of the second sub-semiconductor layer is 50 nm to 100 nm.
12. The light-emitting element according to claim 9, wherein a material of the second sub-semiconductor layer is AlrInsGa1-r-sN, r ≧ 0, s ≧ 0, and 1 ≧ r + s ≧ 0.
13. The light-emitting element according to claim 12, wherein the second sub-semiconductor layer is made of GaN.
14. The light-emitting device as claimed in claim 1, wherein the first type semiconductor layer further comprises a carrier-providing layer disposed between the first sub-semiconductor layer and the light-emitting layer, and a doping concentration of a first type dopant in the carrier-providing layer is greater than a doping concentration of the first type dopant in the highly doped portion.
15. The light-emitting device of claim 14, wherein the first type dopant of the carrier-providing layer has a doping concentration greater than 1018Atomic number/cubic centimeter of 10 or less20Atomic number per cubic centimeter.
16. The light-emitting device as claimed in claim 14, wherein the carrier-providing layer has a thickness of 10 nm to 30 nm.
17. The light-emitting device as claimed in claim 14, wherein the carrier-providing layer is made of AlrInsGa1-r- sN, r ≧ 0, s ≧ 0, and 1 ≧ r + s ≧ 0.
18. The light-emitting device as claimed in claim 17, wherein the carrier-providing layer is GaN.
19. The light-emitting device of claim 14, wherein the carrier-providing layer further comprises a second type dopant, wherein the first type dopant is an N-type dopant, the second type dopant is a P-type dopant, and a doping concentration of the first type dopant is greater than a doping concentration of the second type dopant.
20. The light-emitting element according to claim 1, further comprising:
A first electrode; and
A second electrode;
The epitaxial structure is disposed between the first electrode and the second electrode, the first-type semiconductor layer is disposed between the light-emitting layer and the first electrode, and the first-type semiconductor layer further includes a current diffusion layer disposed between the first sub-semiconductor layer and the first electrode.
21. The light-emitting device according to any one of claims 1 to 20, wherein the first type dopants are all N-type dopants.
22. The light-emitting device according to any one of claims 1 to 20, wherein a thickness of the epitaxial structure is not more than 6 μm.
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| CN102185062A (en) * | 2011-04-08 | 2011-09-14 | 中山大学 | III-group nitride light-emitting diode (LED) and manufacturing method thereof |
| CN105470358A (en) * | 2016-01-29 | 2016-04-06 | 安徽三安光电有限公司 | Light emitting diode element and production method thereof |
| CN106409998A (en) * | 2016-11-04 | 2017-02-15 | 东莞市联洲知识产权运营管理有限公司 | LED epitaxial wafer having high anti-static capability |
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| CN102185062A (en) * | 2011-04-08 | 2011-09-14 | 中山大学 | III-group nitride light-emitting diode (LED) and manufacturing method thereof |
| CN105470358A (en) * | 2016-01-29 | 2016-04-06 | 安徽三安光电有限公司 | Light emitting diode element and production method thereof |
| CN106409998A (en) * | 2016-11-04 | 2017-02-15 | 东莞市联洲知识产权运营管理有限公司 | LED epitaxial wafer having high anti-static capability |
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