CN108983518B - 阵列基板及其制备方法 - Google Patents
阵列基板及其制备方法 Download PDFInfo
- Publication number
- CN108983518B CN108983518B CN201810813280.6A CN201810813280A CN108983518B CN 108983518 B CN108983518 B CN 108983518B CN 201810813280 A CN201810813280 A CN 201810813280A CN 108983518 B CN108983518 B CN 108983518B
- Authority
- CN
- China
- Prior art keywords
- common electrode
- substrate
- array substrate
- dbs common
- dbs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000004973 liquid crystal related substance Substances 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明涉及一种阵列基板及其制备方法。该阵列基板包括:基板;位于所述基板一侧交叉设置的多条数据线和多条扫描线,所述多条数据线和所述多条扫描线限定出多个子像素区域,所述多条数据线和所述多条扫描线相互绝缘;与所述多条数据线和所述多条扫描线位于所述基板同一侧的色阻层,所述色阻层包括多个色阻,且相邻的两个所述色阻具有对应于数据线区域的交叠区域;位于所述色阻层的交叠区域背离所述基板一侧设有DBS公共电极走线以遮蔽数据线,所述DBS公共电极走线的边缘设有平行于扫描线方向的均匀狭缝。本发明还提供了阵列基板的制备方法。本发明的阵列基板及其制备方法能够降低色阻交叠位置DBS公共电极走线处漏光,提高色域及对比度,提升产品品质。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板及其制备方法。
背景技术
液晶显示装置(Liquid Crystal Display,LCD)具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。如:液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。
通常液晶显示装置包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组(Backlight module)。其中,液晶面板的结构主要是由薄膜晶体管阵列(Thin FilmTransistor Array,TFT Array)基板、彩色滤光片(Color Filter,CF)基板以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成,其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转,将背光模组的光线折射出来产生画面。
COA(Color filter on Array)技术是一种将彩色滤光层即红(R)、绿(G)、蓝(B)色阻直接制作在阵列基板上的集成技术。目前在COA技术之上,DBS(Data BM saving)的像素设计也越来越多的被采用,在数据线上方覆盖ITO(氧化铟锡)走线,ITO走线的宽度略宽于数据线,这些ITO走线与公共电极(COM)在电位上通常设置成等电位,在面板正常工作时,这些ITO走线与公共电极形成的电场可以使液晶分子保持不偏转的状态,从而起到遮光的目的。
AMLCD(有源矩阵液晶显示器)曲面面板设计中通常采用DBS(Data BM saving)设计和COA(color filter on array)技术来提高开口率,降低寄生电容;但是由于地形及色阻流平性差异会使得相邻各色阻之间经常存在交叠区域,在交叠处产生凸起,形成牛角地形,平坦度变差;牛角地形会导致液晶极角发生变化,该位置处液晶非垂直排布,这样就会在色阻交叠位置发生漏光现象,影响面板色度及对比度等特性参数。
如图1A所示,其为一种现有阵列基板俯视示意图。该阵列基板主要包括:基板(图未示);位于所述基板一侧交叉设置的多条数据线20和多条扫描线10,所述多条数据线20和所述多条扫描线10限定出多个子像素区域,所述多条数据线20和所述多条扫描线10相互绝缘;与所述多条数据线20和所述多条扫描线10位于所述基板同一侧的色阻层,所述色阻层包括多个色阻30,且相邻的两个所述色阻30具有对应于数据线区域的交叠区域;位于所述色阻层的交叠区域背离所述基板一侧设有DBS公共电极走线40以遮蔽数据线20。
设于基板上的TFT阵列主要包括横向的扫描线10和纵向的数据线20,在由交叉的扫描线10和数据线20所限定的子像素区域中设有色阻30以及像素电极(图未示),例如RGB三种色阻30;横向相邻的色阻30在数据线区域互相连接交叠(图1A中以虚线部分表示),纵向相邻的色阻30之间在扫描线区域设有黑色矩阵50;在数据线20上方平行设有DBS公共电极走线40,DBS公共电极走线40宽度略宽于数据线20,用于液晶显示中实现遮光。
如图1B所示,其为图1A中A-A位置截面示意图,并且增加了图1A中所未绘示的结构。TFT阵列的源极80上制备有色阻30,色阻30上设有DBS公共电极走线40及像素电极60,DBS公共电极走线40与对侧基板上的公共电极70在电位上通常设置成等电位,以使工作时液晶分子90保持不偏转的状态。由于两种颜色的色阻30交叠处产生凸起,从而使得色阻30交叠处DBS公共电极走线40位置的液晶分子90由于地形以及上下基板在该位置处形成的正向电场或侧向电场产生漏光。
发明内容
因此,本发明的目的在于提供一种阵列基板及其制备方法,降低色阻交叠位置DBS公共电极走线处漏光。
为实现上述目的,本发明提供了一种阵列基板,包括:基板;
位于所述基板一侧交叉设置的多条数据线和多条扫描线,所述多条数据线和所述多条扫描线限定出多个子像素区域,所述多条数据线和所述多条扫描线相互绝缘;
与所述多条数据线和所述多条扫描线位于所述基板同一侧的色阻层,所述色阻层包括多个色阻,且相邻的两个所述色阻具有对应于数据线区域的交叠区域;
位于所述色阻层的交叠区域背离所述基板一侧设有DBS公共电极走线以遮蔽数据线,所述DBS公共电极走线的边缘设有平行于扫描线方向的均匀狭缝。
其中,所述DBS公共电极走线的一侧边缘设有所述狭缝。
其中,所述DBS公共电极走线的两侧边缘设有所述狭缝。
其中,所述DBS公共电极走线的两侧边缘对称设有所述狭缝。
其中,所述DBS公共电极走线的两侧边缘非对称设有所述狭缝。
其中,所述DBS公共电极走线两侧的所述狭缝的纵向分布范围合并后遍及所述DBS公共电极走线所处的子像素区域。
其中,所述子像素区域设有像素电极。
本发明还提供了一种阵列基板的制备方法,包括:
提供一基板,在基板一侧制备TFT阵列;
在TFT阵列的钝化层上形成色阻;
在色阻上形成过孔;
在色阻上形成ITO薄膜,图案化ITO薄膜形成像素电极以及DBS公共电极走线,DBS公共电极走线的边缘设有平行于扫描线方向的均匀狭缝;所述像素电极通过所述过孔与TFT阵列中的漏极连接。
其中,在基板一侧制备TFT阵列的步骤包括:
在基板上形成栅极金属层并图案化栅极金属层,得到栅极;
在栅极及基板上形成栅极绝缘层;
在栅极绝缘层上形成有源层;
在有源层上形成欧姆接触层;
在欧姆接触层上形成源漏极金属层并图案化源漏极金属层,得到源漏极;
在源漏极上形成钝化层。
综上,本发明的阵列基板及其制备方法能够降低色阻交叠位置DBS公共电极走线处漏光,提高色域及对比度,提升产品品质。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其他有益效果显而易见。
附图中,
图1A为一种现有阵列基板俯视示意图;
图1B为一种图1A中A-A位置截面示意图;
图2A为本发明阵列基板一较佳实施例的俯视示意图;
图2B为图2A中DBS公共电极走线的图案示意图;
图3A为本发明阵列基板又一较佳实施例的俯视示意图;
图3B为图3A中B-B位置截面示意图。
具体实施方式
参见图2A及图2B,图2A为本发明阵列基板一较佳实施例的俯视示意图,图2B为图2A中DBS公共电极走线的图案示意图。该较佳实施例的阵列基板主要包括:基板(图未示);位于所述基板一侧交叉设置的多条数据线20和多条扫描线10,所述多条数据线20和所述多条扫描线10限定出多个子像素区域,所述多条数据线20和所述多条扫描线10相互绝缘;与所述多条数据线20和所述多条扫描线10位于所述基板同一侧的色阻层,所述色阻层包括多个色阻30,且相邻的两个所述色阻30具有对应于数据线区域的交叠区域;位于所述色阻层的交叠区域背离所述基板一侧设有DBS公共电极走线41以遮蔽数据线20,所述DBS公共电极走线41的边缘设有平行于扫描线10方向的均匀狭缝。
该阵列基板所包含的像素结构主要包括:设于基板上的TFT阵列包括横向的扫描线10和纵向的数据线20,在由交叉的扫描线10和数据线20所限定的子像素区域中设有色阻30以及像素电极(图未示),例如RGB三种色阻30;横向相邻的色阻30在数据线区域互相连接交叠(图2A中以虚线部分表示),纵向相邻的色阻30之间在扫描线区域设有黑色矩阵50;在数据线20上方色阻30交叠处平行于数据线20设有DBS公共电极走线41以屏蔽数据线20,DBS公共电极走线41宽度略宽于数据线20,用于液晶显示中实现遮光;DBS公共电极走线41的边缘设有平行于扫描线方向的均匀狭缝100。此较佳实施例中,狭缝100设置于DBS公共电极走线41的上下位置各一侧的边缘;本发明可以将DBS公共电极走线41通过光罩定义方式形成狭缝图案(slit pattern),该图案方位角分别为0°与180°,狭缝100开口方向平行于扫描线方向,可以朝向两侧两个方向。
图3A为本发明阵列基板又一较佳实施例的俯视示意图。该较佳实施例的结构大体上与图2A中相同,该较佳实施例的阵列基板主要包括:基板(图未示);位于所述基板一侧交叉设置的多条数据线20和多条扫描线10,所述多条数据线20和所述多条扫描线10限定出多个子像素区域,所述多条数据线20和所述多条扫描线10相互绝缘;与所述多条数据线20和所述多条扫描线10位于所述基板同一侧的色阻层,所述色阻层包括多个色阻30,且相邻的两个所述色阻30具有对应于数据线区域的交叠区域;位于所述色阻层的交叠区域背离所述基板一侧设有DBS公共电极走线42以遮蔽数据线20,所述DBS公共电极走线42的边缘设有平行于扫描线10方向的均匀狭缝。
在数据线20上方色阻30交叠处平行于数据线20设有DBS公共电极走线42以屏蔽数据线20,DBS公共电极走线42的边缘设有平行于扫描线方向的均匀狭缝100;此较佳实施例中,狭缝100对称设置在DBS公共电极走线42的两侧边缘,两侧均形成狭缝100可以提高DBS公共电极走线42控制液晶效果。
参见图3B,其为本发明图3A中B-B位置的截面示意图,并且增加了图3A中所未绘示的结构。TFT阵列的源极80上制备有色阻30,色阻30上设有DBS公共电极走线42及像素电极60,工作时像素电极60与公共电极70之间的电场使液晶分子91偏转,DBS公共电极走线42与对侧基板上的公共电极70在电位上通常设置成等电位,以使工作时色阻30交叠处液晶分子90保持不偏转的状态。本发明通过使DBS公共电极走线42上狭缝100形成0°与180°方位角,提高DBS公共电极走线42控制液晶效果,消除由于地形以及上下基板在该位置处形成的正向电场或侧向电场而导致的漏光。
DBS公共电极走线上的狭缝也可以采用其他设计,只要能提高DBS公共电极走线控制液晶的效果即可。例如,DBS公共电极走线的可以两侧边缘设有狭缝,并且两侧边缘的狭缝位置非对称;或者DBS公共电极走线可以仅一侧边缘设有狭缝;DBS公共电极走线上两侧(包括一侧的情况)的狭缝的纵向分布范围合并后遍及DBS公共电极走线所处的子像素区域,以满足控制液晶的需要。
本发明还提供了相应的阵列基板的制备方法,主要包括:
提供基板,在基板一侧制备TFT阵列;TFT阵列可以采用现有的TFT阵列结构;
在TFT阵列的钝化层上形成色阻;TFT阵列的钝化层(PV1)沉积后通过涂布(coating)工艺形成RGB色阻;
在色阻上形成过孔;RGB色阻完成后,通过干蚀刻或湿蚀刻工艺形成过孔以露出TFT阵列的钝化层;钝化层再形成用于使像素电极连接TFT电极的过孔;
形成ITO薄膜,图案化ITO薄膜形成像素电极以及DBS公共电极走线,DBS公共电极走线的边缘设有平行于扫描线方向的均匀狭缝;所述像素电极通过所述过孔与TFT阵列中的漏极连接;色阻上的过孔使色阻下方的TFT阵列的钝化层露出,钝化层设有用于连接漏极的过孔,像素电极通过色阻以及钝化层的过孔连接漏极。DBS公共电极走线的图案可以根据前面的实施例进行设计,通过光罩定义方式形成狭缝图案。通过溅射(Sputter)形成ITO薄膜,通过湿蚀刻工艺形成像素电极及DBS公共电极走线图案。
制备TFT阵列可以采用一般的TFT制备工艺,制备流程为Metal1-(GI+a-Si+n+Si)-Metal 2-PV1;主要包括:
在基板上形成栅极金属层(Metal1),图案化栅极金属层,得到栅极;
在栅极及基板上形成栅极绝缘层(GI);
在栅极绝缘层上形成有源层(a-Si);
形成欧姆接触层(n+Si);可以在有源层上通过化学气相沉积等方式形成欧姆接触层;
形成源漏极金属层(Metal 2);在欧姆接触层上形成源漏极金属层,然后图案化源漏极金属层,得到源漏极;
在源漏极上形成钝化层(PV1)。
综上,本发明的阵列基板及其制备方法能够降低色阻交叠位置DBS公共电极走线处漏光,提高色域及对比度,提升产品品质。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (9)
1.一种阵列基板,其特征在于,包括:
基板;
位于所述基板一侧交叉设置的多条数据线和多条扫描线,所述多条数据线和所述多条扫描线限定出多个子像素区域,所述多条数据线和所述多条扫描线相互绝缘;
与所述多条数据线和所述多条扫描线位于所述基板同一侧的色阻层,所述色阻层包括多个色阻,且相邻的两个所述色阻具有对应于数据线区域的交叠区域;
位于所述色阻层的交叠区域背离所述基板一侧设有DBS公共电极走线以遮蔽数据线,所述DBS公共电极走线的边缘设有平行于扫描线方向的均匀狭缝;
所述DBS公共电极走线与数据线平行,所述DBS公共电极走线宽度略宽于数据线,用于液晶显示中实现遮光。
2.如权利要求1所述的阵列基板,其特征在于,所述DBS公共电极走线的一侧边缘设有所述狭缝。
3.如权利要求1所述的阵列基板,其特征在于,所述DBS公共电极走线的两侧边缘设有所述狭缝。
4.如权利要求3所述的阵列基板,其特征在于,所述DBS公共电极走线的两侧边缘对称设有所述狭缝。
5.如权利要求3所述的阵列基板,其特征在于,所述DBS公共电极走线的两侧边缘非对称设有所述狭缝。
6.如权利要求1所述的阵列基板,其特征在于,所述DBS公共电极走线两侧的所述狭缝的纵向分布范围合并后遍及所述DBS公共电极走线所处的子像素区域。
7.如权利要求1所述的阵列基板,其特征在于,所述子像素区域设有像素电极。
8.一种阵列基板的制备方法,其特征在于,包括:
提供一基板,在基板一侧制备TFT阵列;
在TFT阵列的钝化层上形成色阻;
在色阻上形成过孔;
在色阻上形成ITO薄膜,图案化ITO薄膜形成像素电极以及DBS公共电极走线,DBS公共电极走线的边缘设有平行于扫描线方向的均匀狭缝;所述像素电极通过所述过孔与TFT阵列中的漏极连接;
所述DBS公共电极走线与数据线平行,所述DBS公共电极走线宽度略宽于数据线,用于液晶显示中实现遮光。
9.如权利要求8所述的阵列基板的制备方法,其特征在于,在基板一侧制备TFT阵列的步骤包括:
在基板上形成栅极金属层并图案化栅极金属层,得到栅极;
在栅极及基板上形成栅极绝缘层;
在栅极绝缘层上形成有源层;
在有源层上形成欧姆接触层;
在欧姆接触层上形成源漏极金属层并图案化源漏极金属层,得到源漏极;
在源漏极上形成钝化层。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810813280.6A CN108983518B (zh) | 2018-07-23 | 2018-07-23 | 阵列基板及其制备方法 |
US16/321,464 US11088177B2 (en) | 2018-07-23 | 2018-09-27 | Array substrate and manufacturing method thereof |
PCT/CN2018/108068 WO2020019492A1 (zh) | 2018-07-23 | 2018-09-27 | 阵列基板及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810813280.6A CN108983518B (zh) | 2018-07-23 | 2018-07-23 | 阵列基板及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108983518A CN108983518A (zh) | 2018-12-11 |
CN108983518B true CN108983518B (zh) | 2020-09-29 |
Family
ID=64550521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810813280.6A Active CN108983518B (zh) | 2018-07-23 | 2018-07-23 | 阵列基板及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11088177B2 (zh) |
CN (1) | CN108983518B (zh) |
WO (1) | WO2020019492A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110308598B (zh) * | 2019-06-12 | 2022-01-07 | 惠科股份有限公司 | 阵列基板、阵列基板的制作方法和显示面板 |
CN110967883B (zh) * | 2019-11-26 | 2022-04-05 | 深圳市华星光电半导体显示技术有限公司 | 一种液晶显示面板及其制备方法 |
CN111090199B (zh) * | 2020-01-08 | 2022-09-09 | 深圳市华星光电半导体显示技术有限公司 | 一种tft阵列基板和显示面板 |
CN111208683B (zh) * | 2020-02-28 | 2021-04-27 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板 |
CN111443542A (zh) * | 2020-05-06 | 2020-07-24 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
CN111580316B (zh) * | 2020-05-19 | 2023-01-24 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及电子装置 |
CN111812899B (zh) * | 2020-07-01 | 2022-10-04 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
CN114299894B (zh) * | 2022-01-26 | 2022-10-11 | 惠科股份有限公司 | 阵列基板及液晶显示面板 |
CN115347002B (zh) * | 2022-08-18 | 2024-06-25 | 厦门天马显示科技有限公司 | 一种显示面板和显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104280950A (zh) * | 2009-08-21 | 2015-01-14 | 群创光电股份有限公司 | 液晶显示面板及应用其的液晶显示装置 |
CN104297996A (zh) * | 2014-11-10 | 2015-01-21 | 上海天马微电子有限公司 | 一种彩膜基板、液晶显示面板和显示装置 |
CN104375313A (zh) * | 2014-11-12 | 2015-02-25 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示面板的制造方法 |
CN106019748A (zh) * | 2016-07-29 | 2016-10-12 | 上海中航光电子有限公司 | 一种阵列基板及包含其的显示面板 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102789088B (zh) * | 2012-08-03 | 2014-11-05 | 京东方科技集团股份有限公司 | 一种液晶显示面板及显示装置 |
CN104122715A (zh) * | 2013-07-19 | 2014-10-29 | 深超光电(深圳)有限公司 | 薄膜晶体管基板以及液晶显示面板 |
KR102087195B1 (ko) * | 2013-09-05 | 2020-03-11 | 삼성디스플레이 주식회사 | 표시 장치용 박막 트랜지스터 표시판 및 표시판의 제조방법 |
CN103926759B (zh) * | 2014-04-28 | 2016-08-17 | 昆山龙腾光电有限公司 | 液晶显示装置 |
CN104808885A (zh) * | 2015-05-11 | 2015-07-29 | 武汉华星光电技术有限公司 | 阵列基板及触控显示装置 |
CN106226961B (zh) * | 2016-09-29 | 2019-09-13 | 深圳市华星光电技术有限公司 | 一种coa阵列基板及显示装置 |
CN107942587B (zh) * | 2017-11-20 | 2020-10-30 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示面板的配向方法 |
-
2018
- 2018-07-23 CN CN201810813280.6A patent/CN108983518B/zh active Active
- 2018-09-27 US US16/321,464 patent/US11088177B2/en active Active
- 2018-09-27 WO PCT/CN2018/108068 patent/WO2020019492A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104280950A (zh) * | 2009-08-21 | 2015-01-14 | 群创光电股份有限公司 | 液晶显示面板及应用其的液晶显示装置 |
CN104297996A (zh) * | 2014-11-10 | 2015-01-21 | 上海天马微电子有限公司 | 一种彩膜基板、液晶显示面板和显示装置 |
CN104375313A (zh) * | 2014-11-12 | 2015-02-25 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示面板的制造方法 |
CN106019748A (zh) * | 2016-07-29 | 2016-10-12 | 上海中航光电子有限公司 | 一种阵列基板及包含其的显示面板 |
Also Published As
Publication number | Publication date |
---|---|
WO2020019492A1 (zh) | 2020-01-30 |
US20210118908A1 (en) | 2021-04-22 |
CN108983518A (zh) | 2018-12-11 |
US11088177B2 (en) | 2021-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108983518B (zh) | 阵列基板及其制备方法 | |
US8570475B2 (en) | Array substrate, liquid crystal panel and liquid crystal display | |
US6424397B1 (en) | Method of forming wide-viewing angle liquid crystal display | |
TWI416733B (zh) | 薄膜電晶體陣列面板及具有此面板之液晶顯示器 | |
US11199750B2 (en) | Display panel having black matrix comprising extension portions | |
US8455870B2 (en) | Thin film transistor array panel and method of manufacturing the same | |
JP5100968B2 (ja) | 薄膜トランジスタ表示板及びこれを含む液晶表示装置 | |
US6912024B2 (en) | Array substrate of liquid crystal display device having thin film transistor on color filter structure and method of fabricating the same | |
US10139685B2 (en) | Array substrate, manufacturing method thereof and display device | |
KR102314111B1 (ko) | 액정 표시 장치 | |
US20120105778A1 (en) | Liquid crystal display device | |
US7940363B2 (en) | Liquid crystal display panel and method for manufacturing the same | |
KR20050001707A (ko) | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 | |
KR20070033744A (ko) | 액정표시장치 및 그 제조방법 | |
US10423026B2 (en) | Array substrate, display panel, and display device | |
US20240142829A1 (en) | Array substrate and manufacturing method therefor, display assembly, and display device | |
US7136122B2 (en) | Liquid crystal display and manufacturing method thereof | |
CN102227678B (zh) | 液晶显示装置和液晶显示装置的tft基板的制造方法 | |
KR20130033676A (ko) | 프린지 필드 스위칭 모드 액정표시장치 | |
US20070058112A1 (en) | Liquid crystal display panel, color filter, and manufacturing method thereof | |
JP2005018069A (ja) | 液晶表示装置 | |
JP2009151285A (ja) | 液晶表示装置及びその製造方法 | |
US8547515B2 (en) | Display substrate with pixel electrode having V-shape and trapezoidal protrusions, a method of manufacturing the same and a display apparatus having the same | |
US20160216543A1 (en) | Liquid crystal display device | |
KR20150137278A (ko) | 어레이 기판 및 이를 포함하는 액정 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |