CN108957892B - 液晶显示面板 - Google Patents
液晶显示面板 Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 59
- 238000001914 filtration Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 238000012876 topography Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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Abstract
本发明公开一种液晶显示面板,其特征在于,所述液晶显示面板包括:基板,所述基板上设置有多条数据线以及多条栅极线,所述数据线与所述栅极线交叉形成多个像素单元,每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构;所述金属图形层设置在所述基板上;所述滤光色阻覆盖设置在所述金属图形层上;以及所述栅极遮光结构,设置在所述栅极线上方,用于遮挡相邻两所述像素单元之间间隙,所述栅极遮光结构的边缘位于所述滤光色阻内,在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部。所述退缩部减少色阻边缘与遮光结构边缘交迭的程度而避免栅极遮光结构所凸起形成的挡墙过高影响后续制程。
Description
技术领域
本发明是关于一种液晶显示面板,其可降低栅极遮光条挡墙效应,避免聚酰亚胺(Polyimide,PI)液及液晶(Liquid Crystal,LC)扩散性降低或引入配向暗纹等问题。
背景技术
现有技术的液晶显示面板的黑色间隔物(BPS)面板结构中,黑色间隔物膜层厚度较大,一般达3um以上。在具有黑色间隔物的色阻阵列(Color Filter On Array,COA)基板中,基板地形较为复杂,平坦度较差,在后续的成盒制程中,这类阵列基板上的复杂地形恐影响配向液的涂布以及液晶的扩散。
请参照图1及图2所示的黑色间隔物显示面板,包括基板90,基板90上设置有多条数据线91以及多条栅极线92,数据线91与栅极线92交叉形成多个像素单元。
每一像素单元内层叠的第一金属层941和第二金属层942形成了该像素单元的储存电容94(Storage Capacitor,Cst)。所述像素单元内还设置有滤光色阻93(图1仅示出滤光色阻靠近栅极线所在侧的部分轮廓),滤光色阻93的边缘931覆盖设置在所述储存电容94上。
在栅极线92的上方还设有用于遮挡相邻两像素单元之间间隙的栅极遮光结构95,所述栅极遮光结构95的边缘951位于滤光色阻内。可参考图2的截面图所示,由于滤光色阻93、栅极遮光结构95以及储存电容94相互堆叠形成了较大段差,甚至形成牛角,在后续的成盒制程中将影响配向液的涂布和液晶的流动。
发明内容
有鉴于现有技术的具有黑色间隔物的色阻基板具有挡墙效应而不利Cell制程的缺点,本发明提供一种的降低挡墙效应的液晶显示面板,其可降低栅极遮光条挡墙效应,避免聚酰亚胺(Polyimide,PI)液及液晶(Liquid Crystal,LC)扩散性降低或引入配向暗纹等问题。
本发明的主要目的在于提供一种降低挡墙效应的液晶显示面板,包括:
基板,所述基板上设置有多条数据线以及多条栅极线,所述数据线与所述栅极线交叉形成多个像素单元,每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构;
所述金属图形层设置在所述基板上;
所述滤光色阻覆盖设置在所述金属图形层上;以及
所述栅极遮光结构,设置在所述栅极线上方,用于遮挡相邻两所述像素单元之间间隙,所述栅极遮光结构的边缘位于所述滤光色阻内,在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部。
在本发明的一实施例中,各所述滤光色阻具有一色阻边缘,所述色阻边缘迭设在所述金属图形层的一部份上;以及所述栅极遮光结构具有一迭设在所述色阻边缘上的遮光结构边缘,所述退缩部形成在所述遮光结构边缘上,且位于所述金属图形层上方。
在本发明的一实施例中,所述栅极遮光结构的所述退缩部是迭设在所述滤光色阻的所述色阻边缘上,且所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘的重迭宽度是小于所述栅极遮光结构的所述遮光结构边缘与所述滤光色阻的所述色阻边缘的重迭宽度。
在本发明的一实施例中,所述栅极遮光结构黑色间隔物及/或黑色矩阵。
在本发明的一实施例中,所述滤光色阻的所述色阻边缘包括一第一渐缩部,所述栅极遮光结构的所述退缩部包括一第二渐缩部,所述第二渐缩部迭设在所述滤光色阻的第一渐缩部上。
在本发明的一实施例中,所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相互切齐不相互迭设。
在本发明的一实施例中,所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘相隔一间距而不相互迭设。
在本发明的一实施例中,所述金属图形层包括有一第一金属层以及一迭设在所述第一金属层上的第二金属层,其中所述第一金属层与所述第二金属层用于形成一电子元件。
在本发明的一实施例中,所述金属图形层的所述第二金属层面积大于所述第一金属层面积,且所述栅极遮光结构的所述退缩部是位于所述第二金属层上方而不超出所述第二金属层的边缘。
在本发明的一实施例中,所述电子元件为一储存电容。
与现有技术相比较,本发明具有下列优点:对应栅极线的所述栅极遮光结构在所述金属图形层与处形成所述退缩部,降低了栅极遮光结构、所述金属图形层处、以及所述滤光色阻三者交迭处的厚度,或者,所述退缩部不与所述滤光色阻相互迭设,从而能有降低栅极遮光结构在所述交迭处形成的挡墙厚度,使所述处的地形平坦化,因而能够增进PI液及LC之流动性与扩散性,避免引起显示面板的暗纹或是漏光。
为让本发明的上述内容能更明显易懂,下文特举优选实施例,幷配合所附图式,作详细说明如下:
附图说明
图1是现有技术液晶显示面板的局部放大俯视图,其中图1仅示出滤光色阻靠近栅极线所在侧的部分轮廓。
图2是图1的中局部区域的侧面剖视图。
图3是本发明液晶显示面板第一实施例的局部放大俯视图。
图4是图3的局部放大图,其中图4仅示出滤光色阻靠近栅极线所在侧的部分轮廓。
图5是图3中的栅极遮光结构的退缩部的侧面剖视图。
图6是本发明液晶显示面板第二实施例的栅极遮光结构的退缩部的侧面剖视图。
图7是本发明液晶显示面板第三实施例的栅极遮光结构的退缩部的侧面剖视图。
具体实施方式
请参照图3及图4,本发明降低挡墙效应的液晶显示面板的第一实施例包括:基板10,所述基板10上设置有多条数据线11以及多条栅极线12,所述数据线11与所述栅极线12交叉形成多个像素单元13,每一像素单元13具有金属图形层15、滤光色阻20、以及栅极遮光结构。
所述金属图形层15设置在所述基板10上。所述滤光色阻20覆盖设置在所述金属图形层15上。所述栅极遮光结构,设置在所述栅极线12上方,用于遮挡相邻两所述像素单元13之间间隙,所述栅极遮光结构的边缘位于所述滤光色阻20内,在所述栅极遮光结构上朝远离所述滤光色阻20的方向内缩形成一退缩部35。
所述金属图形层15包括有一第一金属层151以及一迭设在所述第一金属层151上的第二金属层152,其中所述第一金属层151与所述第二金属层152用于形成一电子元件,例如储存电容。
所述滤光色阻20具有一色阻边缘21,所述色阻边缘21迭设在所述金属图形层15的一部份上;以及所述栅极遮光结构30具有一迭设在所述色阻边缘21上的遮光结构边缘31,所述退缩部35形成在所述遮光结构边缘31上,且位于所述金属图形层上方。所述退缩部35可呈矩形。所述滤光色阻20的所述色阻边缘21包括一第一渐缩部211位在所述色阻边缘21的内侧,所述第一渐缩部211是朝着所述滤光色阻20的内侧边缘的方向逐渐缩小而减少厚度。
优选地,所述栅极遮光结构30的所述退缩部35相较于所述遮光结构边缘31的退缩距离小于或等于3um。优选地,所述栅极遮光结构30的所述退缩部35的一转折点P相与所述金属图形层15的一最近边缘的最小距离D1为等于或大于2um,如图4所示。最小距离D1的设定可确保栅极遮光结构30不会遮蔽金属图形层15以外的区域而导致意外遮盖液晶显示面板的发光区。
在本发明第1实施例中,所述栅极遮光结构30的所述退缩部35是迭设在所述滤光色阻20的所述色阻边缘21上,且所述栅极遮光结构30的所述退缩部35与所述滤光色阻20的所述色阻边缘21的重迭宽度W是小于所述栅极遮光结构30的所述遮光结构边缘31与所述滤光色阻20的所述色阻边缘21的重迭宽度。
优选地,所述栅极遮光结构30的所述退缩部35包括一第二渐缩部351,所述第二渐缩部351迭设在所述滤光色阻20的第一渐缩部211上,如图5所示。所述第二渐缩部351是朝着所述色栅极遮光结构30的内侧边缘的方向逐渐缩小而减少厚度。
优选地,所述金属图形层15的所述第二金属层152面积大于所述第一金属层151面积,且所述栅极遮光结构30的所述退缩部35是位于所述第二金属层152上方而不超出所述第二金属层152的边缘。
请参照图6,本发明降低挡墙效应的液晶显示面板的第2实施例与第1实施例大致相同,不同处在于,所述第2实施例的所述栅极遮光结构30的所述退缩部35与所述滤光色阻20的所述色阻边缘21相互切齐不相互迭设。
请参照图7,本发明降低挡墙效应的液晶显示面板的第3实施例与第1实施例大致相同,不同处在于,所述第3实施例的所述栅极遮光结构30的所述退缩部35与所述滤光色阻20的所述色阻边缘21相隔一间距D2而不相互迭设。所述间距D2小于或等于1um。
与现有技术相比较,本发明具有下列优点:对应栅极线12的所述栅极遮光条3的所述栅极遮光结构30在所述金属图形层15与处形成所述退缩部35,降低了栅极遮光结构30、所述金属图形层15处、以及所述滤光色阻20三者交迭处的厚度(第1实施例),或者,所述退缩部35不与所述滤光色阻20相互迭设(第2实施例及第3实施例),从而能有降低栅极遮光结构30在所述交迭处形成的挡墙厚度,使所述处的地形平坦化,因而能够增进聚酰亚胺(Polyimide,PI)液及液晶(Liquid Crystal,LC)之流动性与扩散性,避免引起显示面板的暗纹或是漏光。
Claims (5)
1.一种液晶显示面板,其特征在于,所述液晶显示面板包括:
基板,所述基板上设置有多条数据线以及多条栅极线,所述数据线与所述栅极线交叉形成多个像素单元,每一像素单元具有金属图形层、滤光色阻、以及栅极遮光结构;
所述金属图形层设置在所述基板上;
所述滤光色阻覆盖设置在所述金属图形层上;以及
所述栅极遮光结构,设置在所述栅极线上方,用于遮挡相邻两所述像素单元之间间隙,所述栅极遮光结构的边缘位于所述滤光色阻内,在所述栅极遮光结构上朝远离所述滤光色阻的方向内缩形成一退缩部;
各所述滤光色阻具有一色阻边缘,所述色阻边缘迭设在所述金属图形层的一部份上;以及所述栅极遮光结构具有一迭设在所述色阻边缘上的遮光结构边缘,所述退缩部形成在所述遮光结构边缘上,且位于所述金属图形层上方;
所述栅极遮光结构的所述退缩部是迭设在所述滤光色阻的所述色阻边缘上,且所述栅极遮光结构的所述退缩部与所述滤光色阻的所述色阻边缘的重迭宽度是小于所述栅极遮光结构的所述遮光结构边缘与所述滤光色阻的所述色阻边缘的重迭宽度;
所述滤光色阻的所述色阻边缘包括一第一渐缩部,所述栅极遮光结构的所述退缩部包括一第二渐缩部,所述第二渐缩部迭设在所述滤光色阻的第一渐缩部上。
2.根据权利要求1所述的液晶显示面板,其特征在于,所述栅极遮光结构包括黑色间隔物及/或黑色矩阵。
3.根据权利要求1所述的液晶显示面板,其特征在于,所述金属图形层包括有一第一金属层以及一迭设在所述第一金属层上的第二金属层,其中所述第一金属层与所述第二金属层用于形成一电子元件。
4.根据权利要求3所述的液晶显示面板,其特征在于,所述金属图形层的所述第二金属层面积大于所述第一金属层面积,且所述栅极遮光结构的所述退缩部是位于所述第二金属层上方而不超出所述第二金属层的边缘。
5.根据权利要求3所述的液晶显示面板,其特征在于,所述电子元件为一储存电容。
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