CN108950478A - 环保低辐射玻璃及其制备方法 - Google Patents

环保低辐射玻璃及其制备方法 Download PDF

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CN108950478A
CN108950478A CN201810850782.6A CN201810850782A CN108950478A CN 108950478 A CN108950478 A CN 108950478A CN 201810850782 A CN201810850782 A CN 201810850782A CN 108950478 A CN108950478 A CN 108950478A
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吕崇新
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Nanjing Gaojian Glass Technology Co ltd
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Abstract

本发明公开了一种环保低辐射玻璃及其制备方法,该环保低辐射玻璃自下而上依次包括:基材层、第一过渡层、掺杂氟锑的氧化锡层、种子层、功能层、调色层、第二过渡层、阻挡层以及保护层,其中,种子层是金属Cu层,种子层的厚度为5‑10nm,功能层为金属Ag层,功能层的厚度为5‑10nm,调色层为金属Pd层,调色层的厚度为3‑8nm,第二过渡层是金属Ti层,第二过渡层的厚度为3‑6nm,掺杂氟锑的氧化锡层的厚度为5‑10nm。本发明的环保低辐射玻璃外观美观,同时还保证了较高的低辐射性能以及较高的可见光透射率。

Description

环保低辐射玻璃及其制备方法
技术领域
本发明是关于低辐射玻璃技术领域,特别是关于一种环保低辐射玻璃及其制备方法。
背景技术
在人类经常活动和生活的一些空间中,如住房、汽车、飞机和冷藏柜体等都要求具备一定的保温、隔热和采光功能以满足人类生产和生活需要。玻璃是最常用也是最适宜的透明采光材料,但是普通平板玻璃的保温隔热效果均不理想,无法满足人类的生产生活需要。另一方面,随着人类对建筑审美的不断提高,大面积采光玻璃已经被广泛运用到了各种高层或地标性建筑上,但却无法与建筑节能和降低光污染等现代建筑理念完美结合。如果建筑采用普通平板玻璃为窗口材料,那么炎热环境下室外热量会以辐射的形式穿透玻璃进入室内,导致室内温度上升;严寒环境下室内热量同样以热辐射的形式通过玻璃很快的散失,导致室内温度急剧下降;从而对建筑的节能性造成影响。据统计数据显示,目前,我国社会总能耗的三分之一为建筑能耗,而建筑能耗中占主导的不是钢筋混领土和各种结构材料的能量散失,而是通过门窗散失的能量。低辐射镀膜玻璃是指玻璃表面镀制有一层或多层特定的金属或金属氧化物、氮化物等具有低辐射性能的薄膜。这些薄膜可以像镜子反射光线一样反射远红外(4.5μm-25μm),减低辐射率,减少入射太阳能30%以上,减少室内热辐射50%以上;同时对人类需求的可见光(380nm-780nm)有较高的透过率,保证室内采光。低辐射镀膜玻璃在能源经济危机并存的今天,已经成为节能效率最高的窗口材料。
受节能政策的指引及市场需求量上升拉动,低辐射玻璃的应用越来越广泛。当前,低辐射玻璃领域中技术比较成熟的是单银或者多银低辐射玻璃。然而现有技术的低辐射玻璃仍然存在一些问题,由于膜层结构设计的缺陷,目前很多低辐射玻璃反射出蓝色或者偏红色的光,这使得这些低辐射玻璃用于玻璃幕墙的外观较差,同时反射的这种颜色的光将导致光污染。通常会在现有的玻璃膜层中加入调色层,但是加入调色层之后必然将导致玻璃的透射率降低,如何保证玻璃颜色美观并且透射率较高是目前现有技术的难题。
公开于该背景技术部分的信息仅仅旨在增加对本发明的总体背景的理解,而不应当被视为承认或以任何形式暗示该信息构成已为本领域一般技术人员所公知的现有技术。
发明内容
本发明的目的在于提供一种环保低辐射玻璃及其制备方法,其能够克服现有技术的缺点。
为实现上述目的,本发明提供了一种环保低辐射玻璃,该环保低辐射玻璃自下而上依次包括:基材层、第一过渡层、掺杂氟锑的氧化锡层、种子层、功能层、调色层、第二过渡层、阻挡层以及保护层,其中,种子层是金属Cu层,种子层的厚度为5-10nm,功能层为金属Ag层,功能层的厚度为5-10nm,调色层为金属Pd层,调色层的厚度为3-8nm,第二过渡层是金属Ti层,第二过渡层的厚度为3-6nm,掺杂氟锑的氧化锡层的厚度为5-10nm。
优选地,上述技术方案中,第一过渡层以及阻挡层是NbSiN层,第一过渡层厚度为10-20nm,阻挡层厚度为30-50nm,保护层是氮化硅层,保护层厚度为30-50nm。
本发明还提供了一种环保低辐射玻璃的制备方法,包括如下步骤:准备表面清洁的基材;在基材表面沉积第一过渡层;在第一过渡层表面沉积掺杂氟锑的氧化锡层;在掺杂氟锑的氧化锡层表面沉积种子层;在种子层表面沉积功能层;在功能层表面沉积调色层;在调色层表面沉积第二过渡层;在第二过渡层表面沉积阻挡层;以及在阻挡层表面沉积保护层;其中,种子层是金属Cu层,种子层的厚度为5-10nm,功能层为金属Ag层,功能层的厚度为5-10nm,调色层为金属Pd层,调色层的厚度为3-8nm,第二过渡层是金属Ti层,第二过渡层的厚度为3-6nm,掺杂氟锑的氧化锡层的厚度为5-10nm。
优选地,上述技术方案中,第一过渡层以及阻挡层是NbSiN层,第一过渡层厚度为10-20nm,阻挡层厚度为30-50nm,保护层是氮化硅层,保护层厚度为30-50nm。
优选地,上述技术方案中,在基材表面沉积第一过渡层具体工艺为:溅射方法为反应射频溅射法,溅射靶材为NbSi靶材,其中,NbSi靶材中,Nb与Si的原子比为1:1,反应气氛为氮气气氛,氮气气压为3-5Pa,氮气流量为50-80sccm,溅射功率为80-120W,溅射电压为40-80V。
优选地,上述技术方案中,在第一过渡层表面沉积掺杂氟锑的氧化锡层具体工艺为:溅射方法为射频溅射法,溅射靶材为氟锑的氧化锡靶材,其中,氟锑的氧化锡靶材,Sn与F的原子比为10:1-13:1,Sb与F的原子比为1:1,反应气氛为氩气气氛,氩气气压为3-5Pa,氩气流量为50-80sccm,溅射功率为180-250W,溅射电压为100-150V。
优选地,上述技术方案中,在掺杂氟锑的氧化锡层表面沉积种子层具体工艺为:溅射方法为直流溅射法,溅射靶材为Cu靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为30-60W,溅射电压为10-40V,溅射温度为300-400℃。
优选地,上述技术方案中,在种子层表面沉积功能层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ag靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为40-80W,溅射电压为20-40V,溅射温度为200-300℃。
优选地,上述技术方案中,在功能层表面沉积调色层具体工艺为:溅射方法为直流溅射法,溅射靶材为Pd靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为40-60W,溅射电压为20-30V,溅射温度为150-250℃。
优选地,上述技术方案中,在调色层表面沉积第二过渡层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ti靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为50-100W,溅射电压为50-100V,溅射温度为200-300℃。
与现有技术相比,本发明的环保低辐射玻璃及其制备方法具有如下优点:本发明设计了一种新型环保低辐射玻璃,本发明的环保低辐射玻璃外观能够避免反射出蓝色或者偏红色的光,外观呈现金色,非常美观,同时还保证了较高的低辐射性能以及较高的可见光透射率,性能优异。
附图说明
图1是根据本发明一实施方式的环保低辐射玻璃的制备方法流程图;
图2是根据本发明一实施方式的低辐射玻璃的结构示意图。
具体实施方式
下面结合附图,对本发明的具体实施方式进行详细描述,但应当理解本发明的保护范围并不受具体实施方式的限制。
除非另有其它明确表示,否则在整个说明书和权利要求书中,术语“包括”或其变换如“包含”或“包括有”等等将被理解为包括所陈述的元件或组成部分,而并未排除其它元件或其它组成部分。
如1图所示,本发明的环保低辐射玻璃的制备方法包括如下步骤:步骤101:准备表面清洁的基材;步骤102:在基材表面沉积第一过渡层;步骤103:在第一过渡层表面沉积掺杂氟锑的氧化锡层;步骤104:在掺杂氟锑的氧化锡层表面沉积种子层;步骤105:在种子层表面沉积功能层;步骤106:在功能层表面沉积调色层;步骤107:在调色层表面沉积第二过渡层;步骤108:在第二过渡层表面沉积阻挡层;以及步骤109:在阻挡层表面沉积保护层。
如图2所示,本发明的环保低辐射玻璃自下而上依次包括:基材层201、第一过渡层202、掺杂氟锑的氧化锡层203、种子层204、功能层205、调色层206、第二过渡层207、阻挡层208以及保护层209。
需要指出的是,本申请的掺杂氟锑的氧化锡靶材是委托靶材生产厂家制作的,靶材的成型工艺是本领域技术人员公知的,例如可以使用真空熔炼的方法得到掺杂氟锑的氧化锡靶材,也可以通过粉末冶金的方法得到掺杂氟锑的氧化锡靶材。在第二过渡层表面沉积阻挡层以及在阻挡层表面沉积保护层是本领域公知的方法,可以使用磁控溅射方法在第二过渡层表面沉积阻挡层以及在阻挡层表面沉积保护层。
实施例1
环保低辐射玻璃的制备方法包括如下步骤:准备表面清洁的基材;在基材表面沉积第一过渡层;在第一过渡层表面沉积掺杂氟锑的氧化锡层;在掺杂氟锑的氧化锡层表面沉积种子层;在种子层表面沉积功能层;在功能层表面沉积调色层;在调色层表面沉积第二过渡层;在第二过渡层表面沉积阻挡层;在阻挡层表面沉积保护层;其中,种子层是金属Cu层,种子层的厚度为10nm,功能层为金属Ag层,功能层的厚度为5nm,调色层为金属Pd层,调色层的厚度为8nm,第二过渡层是金属Ti层,第二过渡层的厚度为3nm,掺杂氟锑的氧化锡层的厚度为5nm。第一过渡层以及阻挡层是NbSiN层,第一过渡层厚度为10nm,阻挡层厚度为30nm,保护层是氮化硅层,保护层厚度为30nm。在基材表面沉积第一过渡层具体工艺为:溅射方法为反应射频溅射法,溅射靶材为NbSi靶材,其中,NbSi靶材中,Nb与Si的原子比为1:1,反应气氛为氮气气氛,氮气气压为3Pa,氮气流量为50sccm,溅射功率为80W,溅射电压为40V。在第一过渡层表面沉积掺杂氟锑的氧化锡层具体工艺为:溅射方法为射频溅射法,溅射靶材为氟锑的氧化锡靶材,其中,氟锑的氧化锡靶材,Sn与F的原子比为10:1,Sb与F的原子比为1:1,反应气氛为氩气气氛,氩气气压为3Pa,氩气流量为50sccm,溅射功率为180W,溅射电压为100V。在掺杂氟锑的氧化锡层表面沉积种子层具体工艺为:溅射方法为直流溅射法,溅射靶材为Cu靶材,反应气氛为氩气气氛,氩气气压为4Pa,氩气流量为50sccm,溅射功率为30W,溅射电压为10V,溅射温度为300℃。在种子层表面沉积功能层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ag靶材,反应气氛为氩气气氛,氩气气压为4Pa,氩气流量为50sccm,溅射功率为40W,溅射电压为20V,溅射温度为200℃。在功能层表面沉积调色层具体工艺为:溅射方法为直流溅射法,溅射靶材为Pd靶材,反应气氛为氩气气氛,氩气气压为4Pa,氩气流量为50sccm,溅射功率为40W,溅射电压为20V,溅射温度为150℃。在调色层表面沉积第二过渡层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ti靶材,反应气氛为氩气气氛,氩气气压为4Pa,氩气流量为50sccm,溅射功率为50W,溅射电压为50V,溅射温度为200℃。
实施例2
环保低辐射玻璃的制备方法包括如下步骤:准备表面清洁的基材;在基材表面沉积第一过渡层;在第一过渡层表面沉积掺杂氟锑的氧化锡层;在掺杂氟锑的氧化锡层表面沉积种子层;在种子层表面沉积功能层;在功能层表面沉积调色层;在调色层表面沉积第二过渡层;在第二过渡层表面沉积阻挡层;在阻挡层表面沉积保护层;其中,种子层是金属Cu层,种子层的厚度为5nm,功能层为金属Ag层,功能层的厚度为10nm,调色层为金属Pd层,调色层的厚度为3nm,第二过渡层是金属Ti层,第二过渡层的厚度为6nm,掺杂氟锑的氧化锡层的厚度为10nm。第一过渡层以及阻挡层是NbSiN层,第一过渡层厚度为20nm,阻挡层厚度为50nm,保护层是氮化硅层,保护层厚度为50nm。在基材表面沉积第一过渡层具体工艺为:溅射方法为反应射频溅射法,溅射靶材为NbSi靶材,其中,NbSi靶材中,Nb与Si的原子比为1:1,反应气氛为氮气气氛,氮气气压为5Pa,氮气流量为80sccm,溅射功率为120W,溅射电压为80V。在第一过渡层表面沉积掺杂氟锑的氧化锡层具体工艺为:溅射方法为射频溅射法,溅射靶材为氟锑的氧化锡靶材,其中,氟锑的氧化锡靶材,Sn与F的原子比为13:1,Sb与F的原子比为1:1,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为80sccm,溅射功率为250W,溅射电压为150V。在掺杂氟锑的氧化锡层表面沉积种子层具体工艺为:溅射方法为直流溅射法,溅射靶材为Cu靶材,反应气氛为氩气气氛,氩气气压为6Pa,氩气流量为80sccm,溅射功率为60W,溅射电压为40V,溅射温度为400℃。在种子层表面沉积功能层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ag靶材,反应气氛为氩气气氛,氩气气压为6Pa,氩气流量为80sccm,溅射功率为80W,溅射电压为40V,溅射温度为300℃。在功能层表面沉积调色层具体工艺为:溅射方法为直流溅射法,溅射靶材为Pd靶材,反应气氛为氩气气氛,氩气气压为6Pa,氩气流量为80sccm,溅射功率为60W,溅射电压为30V,溅射温度为250℃。在调色层表面沉积第二过渡层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ti靶材,反应气氛为氩气气氛,氩气气压为6Pa,氩气流量为80sccm,溅射功率为100W,溅射电压为100V,溅射温度为300℃。
实施例3
环保低辐射玻璃的制备方法包括如下步骤:准备表面清洁的基材;在基材表面沉积第一过渡层;在第一过渡层表面沉积掺杂氟锑的氧化锡层;在掺杂氟锑的氧化锡层表面沉积种子层;在种子层表面沉积功能层;在功能层表面沉积调色层;在调色层表面沉积第二过渡层;在第二过渡层表面沉积阻挡层;在阻挡层表面沉积保护层;其中,种子层是金属Cu层,种子层的厚度为6nm,功能层为金属Ag层,功能层的厚度为6nm,调色层为金属Pd层,调色层的厚度为4nm,第二过渡层是金属Ti层,第二过渡层的厚度为4nm,掺杂氟锑的氧化锡层的厚度为6nm。第一过渡层以及阻挡层是NbSiN层,第一过渡层厚度为12nm,阻挡层厚度为35nm,保护层是氮化硅层,保护层厚度为35nm。在基材表面沉积第一过渡层具体工艺为:溅射方法为反应射频溅射法,溅射靶材为NbSi靶材,其中,NbSi靶材中,Nb与Si的原子比为1:1,反应气氛为氮气气氛,氮气气压4Pa,氮气流量为60sccm,溅射功率为90W,溅射电压为50V。在第一过渡层表面沉积掺杂氟锑的氧化锡层具体工艺为:溅射方法为射频溅射法,溅射靶材为氟锑的氧化锡靶材,其中,氟锑的氧化锡靶材,Sn与F的原子比为12:1,Sb与F的原子比为1:1,反应气氛为氩气气氛,氩气气压为4Pa,氩气流量为60sccm,溅射功率为200W,溅射电压为120V。在掺杂氟锑的氧化锡层表面沉积种子层具体工艺为:溅射方法为直流溅射法,溅射靶材为Cu靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为40W,溅射电压为20V,溅射温度为320℃。在种子层表面沉积功能层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ag靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为50W,溅射电压为25V,溅射温度为220℃。在功能层表面沉积调色层具体工艺为:溅射方法为直流溅射法,溅射靶材为Pd靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为45W,溅射电压为25V,溅射温度为180℃。在调色层表面沉积第二过渡层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ti靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为60W,溅射电压为60V,溅射温度为220℃。
实施例4
环保低辐射玻璃的制备方法包括如下步骤:准备表面清洁的基材;在基材表面沉积第一过渡层;在第一过渡层表面沉积掺杂氟锑的氧化锡层;在掺杂氟锑的氧化锡层表面沉积种子层;在种子层表面沉积功能层;在功能层表面沉积调色层;在调色层表面沉积第二过渡层;在第二过渡层表面沉积阻挡层;在阻挡层表面沉积保护层;其中,种子层是金属Cu层,种子层的厚度为6nm,功能层为金属Ag层,功能层的厚度为7nm,调色层为金属Pd层,调色层的厚度为7nm,第二过渡层是金属Ti层,第二过渡层的厚度为4nm,掺杂氟锑的氧化锡层的厚度为8nm。第一过渡层以及阻挡层是NbSiN层,第一过渡层厚度为15nm,阻挡层厚度为40nm,保护层是氮化硅层,保护层厚度为40nm。在基材表面沉积第一过渡层具体工艺为:溅射方法为反应射频溅射法,溅射靶材为NbSi靶材,其中,NbSi靶材中,Nb与Si的原子比为1:1,反应气氛为氮气气氛,氮气气压为4Pa,氮气流量为70sccm,溅射功率为100W,溅射电压为60V。在第一过渡层表面沉积掺杂氟锑的氧化锡层具体工艺为:溅射方法为射频溅射法,溅射靶材为氟锑的氧化锡靶材,其中,氟锑的氧化锡靶材,Sn与F的原子比为12:1,Sb与F的原子比为1:1,反应气氛为氩气气氛,氩气气压为4Pa,氩气流量为70sccm,溅射功率为220W,溅射电压为120V。在掺杂氟锑的氧化锡层表面沉积种子层具体工艺为:溅射方法为直流溅射法,溅射靶材为Cu靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为70sccm,溅射功率为50W,溅射电压为30V,溅射温度为350℃。在种子层表面沉积功能层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ag靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为70sccm,溅射功率为60W,溅射电压为30V,溅射温度为250℃。在功能层表面沉积调色层具体工艺为:溅射方法为直流溅射法,溅射靶材为Pd靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为70sccm,溅射功率为50W,溅射电压为25V,溅射温度为200℃。在调色层表面沉积第二过渡层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ti靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为70sccm,溅射功率为80W,溅射电压为80V,溅射温度为250℃。
以下介绍本发明的对比例,介绍对比例的目的是为了证明本发明实施例的有益效果,为了便于比较,对比例中仅仅写出与实施例1不一致的内容。
对比例1
不在基材表面沉积第一过渡层。
对比例2
不在第一过渡层表面沉积掺杂氟锑的氧化锡层。
对比例3
不在掺杂氟锑的氧化锡层表面沉积种子层。
对比例4
种子层是金属Cu层,种子层的厚度为15nm。
对比例5
功能层为金属Ag层,功能层的厚度为15nm。
对比例6
调色层为金属Pd层,调色层的厚度为10nm。
对比例7
第二过渡层是金属Ti层,第二过渡层的厚度为8nm。
对比例8
掺杂氟锑的氧化锡层的厚度为15nm。
对比例9
在基材表面沉积第一过渡层具体工艺为:溅射方法为反应射频溅射法,溅射靶材为NbSi靶材,其中,NbSi靶材中,Nb与Si的原子比为1:1,反应气氛为氮气气氛,氮气气压为7Pa,氮气流量为60sccm,溅射功率为150W,溅射电压为100V。
对比例10
在第一过渡层表面沉积掺杂氟锑的氧化锡层具体工艺为:溅射方法为射频溅射法,溅射靶材为氟锑的氧化锡靶材,其中,氟锑的氧化锡靶材,Sn与F的原子比为15:1,Sb与F的原子比为1:1,反应气氛为氩气气氛,氩气气压为7Pa,氩气流量为60sccm,溅射功率为150W,溅射电压为50V。
对比例11
在掺杂氟锑的氧化锡层表面沉积种子层具体工艺为:溅射方法为直流溅射法,溅射靶材为Cu靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为70W,溅射电压为50V,溅射温度为450℃。
对比例12
在种子层表面沉积功能层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ag靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为100W,溅射电压为50V,溅射温度为350℃。
对比例13
在功能层表面沉积调色层具体工艺为:溅射方法为直流溅射法,溅射靶材为Pd靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为80W,溅射电压为40V,溅射温度为300℃。
对比例14
在调色层表面沉积第二过渡层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ti靶材,反应气氛为氩气气氛,氩气气压为5Pa,氩气流量为60sccm,溅射功率为120W,溅射电压为120V,溅射温度为350℃。
对实施例1-5以及对比例1-14测试辐射率与可见光透射率,结果见表1。
表1
前述对本发明的具体示例性实施方案的描述是为了说明和例证的目的。这些描述并非想将本发明限定为所公开的精确形式,并且很显然,根据上述教导,可以进行很多改变和变化。对示例性实施例进行选择和描述的目的在于解释本发明的特定原理及其实际应用,从而使得本领域的技术人员能够实现并利用本发明的各种不同的示例性实施方案以及各种不同的选择和改变。本发明的范围意在由权利要求书及其等同形式所限定。

Claims (10)

1.一种环保低辐射玻璃,其特征在于:所述环保低辐射玻璃自下而上依次包括:基材层、第一过渡层、掺杂氟锑的氧化锡层、种子层、功能层、调色层、第二过渡层、阻挡层以及保护层,其中,所述种子层是金属Cu层,所述种子层的厚度为5-10nm,所述功能层为金属Ag层,所述功能层的厚度为5-10nm,所述调色层为金属Pd层,所述调色层的厚度为3-8nm,所述第二过渡层是金属Ti层,所述第二过渡层的厚度为3-6nm,所述掺杂氟锑的氧化锡层的厚度为5-10nm。
2.如权利要求1所述的环保低辐射玻璃,其特征在于:所述第一过渡层以及所述阻挡层是NbSiN层,所述第一过渡层厚度为10-20nm,所述阻挡层厚度为30-50nm,所述保护层是氮化硅层,所述保护层厚度为30-50nm。
3.一种环保低辐射玻璃的制备方法,其特征在于:所述环保低辐射玻璃的制备方法包括如下步骤:
准备表面清洁的基材;
在所述基材表面沉积第一过渡层;
在所述第一过渡层表面沉积掺杂氟锑的氧化锡层;
在所述掺杂氟锑的氧化锡层表面沉积种子层;
在所述种子层表面沉积功能层;
在所述功能层表面沉积调色层;
在所述调色层表面沉积第二过渡层;
在所述第二过渡层表面沉积阻挡层;以及
在所述阻挡层表面沉积保护层;其中,所述种子层是金属Cu层,所述种子层的厚度为5-10nm,所述功能层为金属Ag层,所述功能层的厚度为5-10nm,所述调色层为金属Pd层,所述调色层的厚度为3-8nm,所述第二过渡层是金属Ti层,所述第二过渡层的厚度为3-6nm,所述掺杂氟锑的氧化锡层的厚度为5-10nm。
4.如权利要求3所述的环保低辐射玻璃的制备方法,其特征在于:所述第一过渡层以及所述阻挡层是NbSiN层,所述第一过渡层厚度为10-20nm,所述阻挡层厚度为30-50nm,所述保护层是氮化硅层,所述保护层厚度为30-50nm。
5.如权利要求4所述的环保低辐射玻璃的制备方法,其特征在于:在所述基材表面沉积第一过渡层具体工艺为:溅射方法为反应射频溅射法,溅射靶材为NbSi靶材,其中,所述NbSi靶材中,Nb与Si的原子比为1:1,反应气氛为氮气气氛,氮气气压为3-5Pa,氮气流量为50-80sccm,溅射功率为80-120W,溅射电压为40-80V。
6.如权利要求4所述的环保低辐射玻璃的制备方法,其特征在于:在所述第一过渡层表面沉积掺杂氟锑的氧化锡层具体工艺为:溅射方法为射频溅射法,溅射靶材为氟锑的氧化锡靶材,其中,所述氟锑的氧化锡靶材,Sn与F的原子比为10:1-13:1,Sb与F的原子比为1:1,反应气氛为氩气气氛,氩气气压为3-5Pa,氩气流量为50-80sccm,溅射功率为180-250W,溅射电压为100-150V。
7.如权利要求4所述的环保低辐射玻璃的制备方法,其特征在于:在所述掺杂氟锑的氧化锡层表面沉积种子层具体工艺为:溅射方法为直流溅射法,溅射靶材为Cu靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为30-60W,溅射电压为10-40V,溅射温度为300-400℃。
8.如权利要求4所述的环保低辐射玻璃的制备方法,其特征在于:在所述种子层表面沉积功能层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ag靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为40-80W,溅射电压为20-40V,溅射温度为200-300℃。
9.如权利要求4所述的环保低辐射玻璃的制备方法,其特征在于:在所述功能层表面沉积调色层具体工艺为:溅射方法为直流溅射法,溅射靶材为Pd靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为40-60W,溅射电压为20-30V,溅射温度为150-250℃。
10.如权利要求4所述的环保低辐射玻璃的制备方法,其特征在于:在所述调色层表面沉积第二过渡层具体工艺为:溅射方法为直流溅射法,溅射靶材为Ti靶材,反应气氛为氩气气氛,氩气气压为4-6Pa,氩气流量为50-80sccm,溅射功率为50-100W,溅射电压为50-100V,溅射温度为200-300℃。
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