CN108942640B - 研磨装置以及研磨方法 - Google Patents

研磨装置以及研磨方法 Download PDF

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Publication number
CN108942640B
CN108942640B CN201810461546.5A CN201810461546A CN108942640B CN 108942640 B CN108942640 B CN 108942640B CN 201810461546 A CN201810461546 A CN 201810461546A CN 108942640 B CN108942640 B CN 108942640B
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CN
China
Prior art keywords
light
intensity
measured
wafer
polishing
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CN201810461546.5A
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English (en)
Chinese (zh)
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CN108942640A (zh
Inventor
金马利文
木下将毅
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Ebara Corp
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Ebara Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Compositions Of Oxide Ceramics (AREA)
CN201810461546.5A 2017-05-17 2018-05-15 研磨装置以及研磨方法 Active CN108942640B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017098254A JP6829653B2 (ja) 2017-05-17 2017-05-17 研磨装置および研磨方法
JP2017-098254 2017-05-17

Publications (2)

Publication Number Publication Date
CN108942640A CN108942640A (zh) 2018-12-07
CN108942640B true CN108942640B (zh) 2021-09-03

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CN201810461546.5A Active CN108942640B (zh) 2017-05-17 2018-05-15 研磨装置以及研磨方法

Country Status (6)

Country Link
US (1) US11045921B2 (enExample)
JP (1) JP6829653B2 (enExample)
KR (1) KR102522882B1 (enExample)
CN (1) CN108942640B (enExample)
SG (1) SG10201803980XA (enExample)
TW (1) TWI758478B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7421460B2 (ja) * 2020-09-29 2024-01-24 株式会社荏原製作所 研磨装置、および研磨パッドの交換時期を決定する方法
JP7689061B2 (ja) 2021-11-11 2025-06-05 株式会社荏原製作所 研磨装置および研磨方法
JP2024092863A (ja) 2022-12-26 2024-07-08 株式会社荏原製作所 基板研磨装置
JP2024093464A (ja) 2022-12-27 2024-07-09 株式会社荏原製作所 光学式膜厚測定器の光量調整方法および研磨装置
JP2024106535A (ja) 2023-01-27 2024-08-08 株式会社荏原製作所 膜厚測定に使用されるプリセットスペクトルデータの異常検出方法、および光学的膜厚測定装置
JP2024158610A (ja) 2023-04-28 2024-11-08 株式会社荏原製作所 研磨対象ではない誤ったワークピースを検出する方法、および光学的膜厚測定装置

Citations (10)

* Cited by examiner, † Cited by third party
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WO2005004218A1 (en) * 2003-07-02 2005-01-13 Ebara Corporation Polishing apparatus and polishing method
US7304744B1 (en) * 1998-12-24 2007-12-04 Sharp Kabushiki Kaisha Apparatus and method for measuring the thickness of a thin film via the intensity of reflected light
CN101995224A (zh) * 2009-08-07 2011-03-30 株式会社堀场制作所 干涉膜厚仪及反射率测量方法
CN104275642A (zh) * 2013-07-11 2015-01-14 株式会社荏原制作所 研磨装置及研磨状态监视方法
CN104620071A (zh) * 2012-08-21 2015-05-13 Fogale纳米技术公司 用于可控地显示隐藏在对象如晶片中的结构的方法和装置
CN104907921A (zh) * 2010-03-02 2015-09-16 株式会社荏原制作所 研磨监视方法、研磨方法、研磨监视装置及研磨装置
CN105452801A (zh) * 2013-07-26 2016-03-30 马波斯S.P.A.公司 用于以干涉法光学检测被加工物体的厚度的方法及设备
CN105729307A (zh) * 2014-12-26 2016-07-06 株式会社荏原制作所 研磨装置及其控制方法
CN106239352A (zh) * 2015-06-05 2016-12-21 株式会社荏原制作所 研磨装置
CN106304845A (zh) * 2015-04-24 2017-01-04 大塚电子株式会社 光学测定装置以及光学测定方法

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JPH06511082A (ja) * 1991-09-18 1994-12-08 アイオワ・ステート・ユニバーシティー・リサーチ・ファウンデーション・インコーポレーテッド 二波長型光度計及びファイバオプチック検知器プローブ
JP3717340B2 (ja) * 1999-07-27 2005-11-16 シャープ株式会社 電子部品製造装置
US6511363B2 (en) 2000-12-27 2003-01-28 Tokyo Seimitsu Co., Ltd. Polishing end point detecting device for wafer polishing apparatus
JP2003249472A (ja) * 2002-02-26 2003-09-05 Hitachi Ltd 膜厚計測方法および膜厚計測装置および薄膜デバイスの製造方法
JP5050024B2 (ja) 2009-09-28 2012-10-17 株式会社荏原製作所 基板研磨装置および基板研磨方法
US8694144B2 (en) 2010-08-30 2014-04-08 Applied Materials, Inc. Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing
JP5980476B2 (ja) * 2010-12-27 2016-08-31 株式会社荏原製作所 ポリッシング装置およびポリッシング方法
US8535115B2 (en) * 2011-01-28 2013-09-17 Applied Materials, Inc. Gathering spectra from multiple optical heads
JP2013222856A (ja) * 2012-04-17 2013-10-28 Ebara Corp 研磨装置および研磨方法
WO2015163164A1 (ja) * 2014-04-22 2015-10-29 株式会社 荏原製作所 研磨方法および研磨装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7304744B1 (en) * 1998-12-24 2007-12-04 Sharp Kabushiki Kaisha Apparatus and method for measuring the thickness of a thin film via the intensity of reflected light
WO2005004218A1 (en) * 2003-07-02 2005-01-13 Ebara Corporation Polishing apparatus and polishing method
CN101995224A (zh) * 2009-08-07 2011-03-30 株式会社堀场制作所 干涉膜厚仪及反射率测量方法
CN104907921A (zh) * 2010-03-02 2015-09-16 株式会社荏原制作所 研磨监视方法、研磨方法、研磨监视装置及研磨装置
CN104620071A (zh) * 2012-08-21 2015-05-13 Fogale纳米技术公司 用于可控地显示隐藏在对象如晶片中的结构的方法和装置
CN104275642A (zh) * 2013-07-11 2015-01-14 株式会社荏原制作所 研磨装置及研磨状态监视方法
CN105452801A (zh) * 2013-07-26 2016-03-30 马波斯S.P.A.公司 用于以干涉法光学检测被加工物体的厚度的方法及设备
CN105729307A (zh) * 2014-12-26 2016-07-06 株式会社荏原制作所 研磨装置及其控制方法
CN106304845A (zh) * 2015-04-24 2017-01-04 大塚电子株式会社 光学测定装置以及光学测定方法
CN106239352A (zh) * 2015-06-05 2016-12-21 株式会社荏原制作所 研磨装置

Also Published As

Publication number Publication date
KR20180126374A (ko) 2018-11-27
US20180339392A1 (en) 2018-11-29
JP6829653B2 (ja) 2021-02-10
SG10201803980XA (en) 2018-12-28
KR102522882B1 (ko) 2023-04-18
US11045921B2 (en) 2021-06-29
CN108942640A (zh) 2018-12-07
TWI758478B (zh) 2022-03-21
TW201900334A (zh) 2019-01-01
JP2018194427A (ja) 2018-12-06

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