CN108911739A - 一种Sm掺杂的无铅介电储能陶瓷的制备方法 - Google Patents

一种Sm掺杂的无铅介电储能陶瓷的制备方法 Download PDF

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CN108911739A
CN108911739A CN201810822156.6A CN201810822156A CN108911739A CN 108911739 A CN108911739 A CN 108911739A CN 201810822156 A CN201810822156 A CN 201810822156A CN 108911739 A CN108911739 A CN 108911739A
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Abstract

本发明公开了一种Sm掺杂的无铅介电储能陶瓷的制备方法，步骤如下：将Na2CO3、Bi2O3、BaCO3、TiO2和Sm2O3加入装有氧化锆球的球磨罐中，倒入无水乙醇，球磨47‑49h，烘干后，在850‑870℃保温3‑4h，加入聚乙烯醇粘接剂，过100目筛，在34‑38MPa下压成圆片素坯，然后将素坯在585‑595℃排胶后升温至1000‑1100℃保温3‑4h，得毛坯陶瓷片；将陶瓷片双面打磨、清洗后印刷上银浆，并在550‑570℃下保温45‑55min，冷却即得。该方法制得的Sm掺杂的无铅介电储能陶瓷具有较低的交、直流电导率及良好的绝缘性，在介电储存方面具有潜在的优势。

Description

一种Sm掺杂的无铅介电储能陶瓷的制备方法
技术领域
本发明涉及一种Sm掺杂的无铅介电储能陶瓷的制备方法。
背景技术
解决能量存储是能源问题的一个重要方面，电能是人类的重要能源，虽然可以长距离输送和使用，但是仍然需要探索更有效的电能储存技术。电介质储能虽然获得了广泛应用，但由于储能密度低，使得储能器占设备体积的比例较大。另外，针对脉冲功率应用方面的大电流要求，只有高储能密度的电介质电容器才能胜任。在高储能密度电介质材料中，具有双电滞回线的反铁电Pb基块体或薄膜材料拥有较高的储能密度，如Pb(Zr,Ti)O3(PZT)，(Pb, La)ZrO3(PLZ)和Pb(Zr,Sn,Ti)O3(PZST)。但是，含Pb材料废弃物会导致环境污染，可以通过多种途径影响人体健康。
具有ABO3型钙钛矿结构的钛酸铋钠（Na0.5Bi0.5TiO3，BNT）基材料是取代含Pb材料的潜在且重要材料之一，但是纯BNT材料难以发挥其潜在优势，需要引入其他组元或用离子掺杂进行改性。研究表明，在BNT中引入BaTiO3（BT）、Bi0.5K0.5TiO3（BKT）组元可以构建出准同型相界（MPB）。具有MPB的BNT基材料不仅存在多相转变，而且会表现出优异的电学性能，如铁电、压电、介电、应变、储能等。其中具有MPB相结构的BNT-BT陶瓷，其结构和电学特性能够被A位、B位或者A/B位的离子掺杂进一步调控。已报道的BNT基储能陶瓷中，在MPB附近的BNT-BT材料常被用于陶瓷储能研究。提高电储能能力主要包括提高击穿场强、构建双电滞回线、提高饱和极化强度的同时降低剩余极化强度。研究表明，0.93BNT-0.07BT（BNT-7BT）陶瓷的电滞回线剩余极化具有向内收缩的特性，形状向双电滞回线转变，比较适合于电储能应用。稀土元素La掺杂BNT-BT陶瓷，不仅可以抑制BNT-BT陶瓷的晶粒生长，提高致密度，而且可以有效降低剩余极化和矫顽场，提高储能密度和效率。
发明内容
本发明的目的在于提供一种Sm掺杂的无铅介电储能陶瓷的制备方法。
本发明通过下面技术方案实现：
一种Sm掺杂的无铅介电储能陶瓷的制备方法，包括如下步骤：将25-35份Na2CO3、10-20份Bi2O3、15-25份BaCO3、20-30份TiO2和15-25份Sm2O3加入装有氧化锆球的球磨罐中，再倒入50-60份无水乙醇，球磨47-49h使其充分均匀混合，于65-75℃烘干后，再在850-870℃保温3-4h预烧合成配方粉体；向配方粉体中加入8-14份聚乙烯醇粘接剂并混合均匀，然后过100目筛得造粒粉体，将造粒粉体在34-38MPa下压成12mm×1mm的圆片素坯，然后将素坯在585-595℃排胶后升温至1000-1100℃保温3-4h随炉冷却到室温，得毛坯陶瓷片；将陶瓷片双面打磨、清洗后印刷上直径为6mm的银浆，并在550-570℃下保温45-55min，冷却至室温即得；各原料均为重量份。
优选地，所述的制备方法中，球磨48h。
优选地，所述的制备方法中，于70℃烘干。
优选地，所述的制备方法中，在860℃保温3.5h预烧合成配方粉体。
优选地，所述的制备方法中，将造粒粉体在36MPa下压成12mm×1mm的圆片素坯。
优选地，所述的制备方法中，将素坯在590℃排胶后升温至1050℃保温3.5h随炉冷却到室温。
优选地，所述的制备方法中，在560℃下保温50min。
本发明技术效果：
该方法简便、快捷、易操作，制得的Sm掺杂的无铅介电储能陶瓷具有较低的交、直流电导率及良好的绝缘性，在介电储存方面具有潜在的优势。
具体实施方式
下面结合实施例具体介绍本发明的实质性内容。
实施例1
一种Sm掺杂的无铅介电储能陶瓷的制备方法，包括如下步骤：将30份Na2CO3、15份Bi2O3、20份BaCO3、25份TiO2和20份Sm2O3加入装有氧化锆球的球磨罐中，再倒入55份无水乙醇，球磨48h使其充分均匀混合，于70℃烘干后，再在860℃保温3.5h预烧合成配方粉体；向配方粉体中加入12份聚乙烯醇粘接剂并混合均匀，然后过100目筛得造粒粉体，将造粒粉体在36MPa下压成12mm×1mm的圆片素坯，然后将素坯在590℃排胶后升温至1050℃保温3.5h随炉冷却到室温，得毛坯陶瓷片；将陶瓷片双面打磨、清洗后印刷上直径为6mm的银浆，并在560℃下保温50min，冷却至室温即得；各原料均为重量份。
实施例2
一种Sm掺杂的无铅介电储能陶瓷的制备方法，包括如下步骤：将25份Na2CO3、10份Bi2O3、15份BaCO3、20份TiO2和15份Sm2O3加入装有氧化锆球的球磨罐中，再倒入50份无水乙醇，球磨47h使其充分均匀混合，于65℃烘干后，再在850℃保温3h预烧合成配方粉体；向配方粉体中加入8份聚乙烯醇粘接剂并混合均匀，然后过100目筛得造粒粉体，将造粒粉体在34MPa下压成12mm×1mm的圆片素坯，然后将素坯在585℃排胶后升温至1000℃保温3h随炉冷却到室温，得毛坯陶瓷片；将陶瓷片双面打磨、清洗后印刷上直径为6mm的银浆，并在550℃下保温45min，冷却至室温即得；各原料均为重量份。
实施例3
一种Sm掺杂的无铅介电储能陶瓷的制备方法，包括如下步骤：将35份Na2CO3、20份Bi2O3、25份BaCO3、30份TiO2和25份Sm2O3加入装有氧化锆球的球磨罐中，再倒入60份无水乙醇，球磨49h使其充分均匀混合，于75℃烘干后，再在870℃保温4h预烧合成配方粉体；向配方粉体中加入14份聚乙烯醇粘接剂并混合均匀，然后过100目筛得造粒粉体，将造粒粉体在38MPa下压成12mm×1mm的圆片素坯，然后将素坯在595℃排胶后升温至1100℃保温4h随炉冷却到室温，得毛坯陶瓷片；将陶瓷片双面打磨、清洗后印刷上直径为6mm的银浆，并在570℃下保温55min，冷却至室温即得；各原料均为重量份。
该方法简便、快捷、易操作，制得的Sm掺杂的无铅介电储能陶瓷具有较低的交、直流电导率及良好的绝缘性，在介电储存方面具有潜在的优势。

Claims (7)

1.一种Sm掺杂的无铅介电储能陶瓷的制备方法，其特征在于包括如下步骤：将25-35份Na2CO3、10-20份Bi2O3、15-25份BaCO3、20-30份TiO2和15-25份Sm2O3加入装有氧化锆球的球磨罐中，再倒入50-60份无水乙醇，球磨47-49h使其充分均匀混合，于65-75℃烘干后，再在850-870℃保温3-4h预烧合成配方粉体；向配方粉体中加入8-14份聚乙烯醇粘接剂并混合均匀，然后过100目筛得造粒粉体，将造粒粉体在34-38MPa下压成12mm×1mm的圆片素坯，然后将素坯在585-595℃排胶后升温至1000-1100℃保温3-4h随炉冷却到室温，得毛坯陶瓷片；将陶瓷片双面打磨、清洗后印刷上直径为6mm的银浆，并在550-570℃下保温45-55min，冷却至室温即得；各原料均为重量份。
2.根据权利要求1所述的制备方法，其特征在于：球磨48h。
3.根据权利要求1所述的制备方法，其特征在于：于70℃烘干。
4.根据权利要求1所述的制备方法，其特征在于：在860℃保温3.5h预烧合成配方粉体。
5.根据权利要求1所述的制备方法，其特征在于：将造粒粉体在36MPa下压成12mm×1mm的圆片素坯。
6.根据权利要求1所述的制备方法，其特征在于：将素坯在590℃排胶后升温至1050℃保温3.5h随炉冷却到室温。
7.根据权利要求1所述的制备方法，其特征在于：在560℃下保温50min。
CN201810822156.6A 2018-07-24 2018-07-24 一种Sm掺杂的无铅介电储能陶瓷的制备方法 Withdrawn CN108911739A (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109650880A (zh) * 2019-02-12 2019-04-19 南阳理工学院 一种稀土掺杂钛酸铋钠钙钛矿材料及其制备方法
CN110282967A (zh) * 2019-07-18 2019-09-27 覃向阳 一种新型无铅压电陶瓷材料
CN114315350A (zh) * 2022-01-24 2022-04-12 武汉理工大学 钛酸铋钠-锆钛酸钡无铅宽温储能陶瓷及其制备方法
CN115073167A (zh) * 2022-05-18 2022-09-20 成都理工大学 一种Sm3+和NaNbO3共同修饰钛酸铋钠基铁电陶瓷材料及其制备方法
CN116874297A (zh) * 2023-07-10 2023-10-13 石河子大学 一种钛酸铋钠基储能陶瓷材料

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109650880A (zh) * 2019-02-12 2019-04-19 南阳理工学院 一种稀土掺杂钛酸铋钠钙钛矿材料及其制备方法
CN110282967A (zh) * 2019-07-18 2019-09-27 覃向阳 一种新型无铅压电陶瓷材料
CN114315350A (zh) * 2022-01-24 2022-04-12 武汉理工大学 钛酸铋钠-锆钛酸钡无铅宽温储能陶瓷及其制备方法
CN114315350B (zh) * 2022-01-24 2023-05-23 武汉理工大学 钛酸铋钠-锆钛酸钡无铅宽温储能陶瓷及其制备方法
CN115073167A (zh) * 2022-05-18 2022-09-20 成都理工大学 一种Sm3+和NaNbO3共同修饰钛酸铋钠基铁电陶瓷材料及其制备方法
CN116874297A (zh) * 2023-07-10 2023-10-13 石河子大学 一种钛酸铋钠基储能陶瓷材料

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Application publication date: 20181130