CN108873620A - 一种直写式光刻机中改善能量均匀性的方法 - Google Patents
一种直写式光刻机中改善能量均匀性的方法 Download PDFInfo
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- CN108873620A CN108873620A CN201810825655.0A CN201810825655A CN108873620A CN 108873620 A CN108873620 A CN 108873620A CN 201810825655 A CN201810825655 A CN 201810825655A CN 108873620 A CN108873620 A CN 108873620A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
Abstract
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CN201810825655.0A CN108873620B (zh) | 2018-07-25 | 2018-07-25 | 一种直写式光刻机中改善能量均匀性的方法 |
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CN201810825655.0A CN108873620B (zh) | 2018-07-25 | 2018-07-25 | 一种直写式光刻机中改善能量均匀性的方法 |
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CN108873620A true CN108873620A (zh) | 2018-11-23 |
CN108873620B CN108873620B (zh) | 2020-09-25 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111562724A (zh) * | 2020-05-18 | 2020-08-21 | 无锡影速半导体科技有限公司 | 一种基于两次重叠曝光提高线宽一致性的方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101799635A (zh) * | 2010-03-16 | 2010-08-11 | 芯硕半导体(中国)有限公司 | 一种无掩模光刻技术的曝光方法 |
CN102385256A (zh) * | 2010-08-30 | 2012-03-21 | 株式会社Orc制作所 | 曝光装置 |
CN102902164A (zh) * | 2012-09-19 | 2013-01-30 | 天津芯硕精密机械有限公司 | 直写式光刻机在步进式曝光时的二维拼接处理方法 |
US20140053399A1 (en) * | 2012-08-27 | 2014-02-27 | Micronic Mydata AB | Maskless writing of a workpiece using a plurality of exposures having different focal planes using multiple dmds |
CN104298080A (zh) * | 2014-11-06 | 2015-01-21 | 苏州苏大维格光电科技股份有限公司 | 一种无掩膜激光直写叠加曝光方法 |
CN108062007A (zh) * | 2016-11-07 | 2018-05-22 | 俞庆平 | 一种提高光刻能量均匀性和改善拼接的方法 |
CN108303853A (zh) * | 2016-11-22 | 2018-07-20 | 江苏影速光电技术有限公司 | 一种dmd结构xy多轴可移动光路直写曝光机 |
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2018
- 2018-07-25 CN CN201810825655.0A patent/CN108873620B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101799635A (zh) * | 2010-03-16 | 2010-08-11 | 芯硕半导体(中国)有限公司 | 一种无掩模光刻技术的曝光方法 |
CN102385256A (zh) * | 2010-08-30 | 2012-03-21 | 株式会社Orc制作所 | 曝光装置 |
US20140053399A1 (en) * | 2012-08-27 | 2014-02-27 | Micronic Mydata AB | Maskless writing of a workpiece using a plurality of exposures having different focal planes using multiple dmds |
CN102902164A (zh) * | 2012-09-19 | 2013-01-30 | 天津芯硕精密机械有限公司 | 直写式光刻机在步进式曝光时的二维拼接处理方法 |
CN104298080A (zh) * | 2014-11-06 | 2015-01-21 | 苏州苏大维格光电科技股份有限公司 | 一种无掩膜激光直写叠加曝光方法 |
CN108062007A (zh) * | 2016-11-07 | 2018-05-22 | 俞庆平 | 一种提高光刻能量均匀性和改善拼接的方法 |
CN108303853A (zh) * | 2016-11-22 | 2018-07-20 | 江苏影速光电技术有限公司 | 一种dmd结构xy多轴可移动光路直写曝光机 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111562724A (zh) * | 2020-05-18 | 2020-08-21 | 无锡影速半导体科技有限公司 | 一种基于两次重叠曝光提高线宽一致性的方法 |
CN111562724B (zh) * | 2020-05-18 | 2022-08-23 | 无锡影速半导体科技有限公司 | 一种基于两次重叠曝光提高线宽一致性的方法 |
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Effective date of registration: 20190409 Address after: 221300 Huashan Road, Pizhou Economic Development Zone, Xuzhou, Jiangsu Applicant after: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY CO., LTD. Address before: 1-3 Floor of F3 Building, China Sensor Network International Innovation Park, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province, 214000 Applicant before: Wuxi speed semiconductor technology Co., Ltd. |
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Address after: 221000 west side of Hengshan Road, Pizhou City, Xuzhou City, Jiangsu Province Applicant after: Jiangsu Yingsu integrated circuit equipment Co., Ltd Address before: 221300 Huashan Road, Pizhou Economic Development Zone, Jiangsu, China, Xuzhou Applicant before: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
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