TW538323B - Electron beam exposure apparatus - Google Patents

Abstract

An electron beam exposure apparatus is disclosed that does not require lead time and that can achieve high effective throughput. The electron beam exposure apparatus comprises a beam source for generating an electron beam, shaping means for shaping the electron beam, deflecting means for changing the position of the electron beam irradiated on a sample, and projection means for focusing the shaped electron beam onto the sample, wherein the shaping means comprises splitting means for generating a plurality of sub-beams by splitting the electron beam, rectangular shaping means for respectively shaping each of the plurality of sub-beams into a desired rectangular shape, and sub-beam deflection means for respectively moving the irradiation position of each of the plurality of sub-beams. The electron beam exposure apparatus thus splits the electron beam generated by a single electron beam source into a plurality of sub-beams, applies shaping to each sub-beam using a variable size rectangle method, and deflects each shaped beam. If the axial distance between the sub-beams is small, the effects of the displacement between the sub-beams can be held small and the problem of displacements at joints does not occur. Moreover, all the sub-beams can be deflected over a wide range using prior known deflection means. As a result, the beam can be split into a large number of sub-beams, and the throughput improves greatly.

Description

538323 A7 B7 V. Description of the invention (!) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This invention relates to an electron beam exposure device, and in particular to a technology for improving the output of an electron beam exposure device. In recent years, semiconductor technology has progressed at a rapid rate, reaching higher integration levels and higher functions of semiconductor integrated circuit circuits (ICs), and then is expected to play across a wide variety of industrial fields, including computers And communication equipment control, the important role of core technology in advanced technology. The accumulation level of 1C increases every four to three years, and in the case of dynamic random access memory (DRAM), its storage capacity increases by a multiple of four, from 1M to 4M, to 16M, to 25 6M, and then to 1G. These high 1C accumulation levels make it possible to develop miniaturization technologies for semiconductor technology. At present, the limit of miniaturization technology is determined by the pattern exposure technology (photoengraving technology). Today's model exposure technology commonly uses an optical exposure (optical photoengraving) device called a segmenter. In this optical photoengraving device, the minimum line width of the pattern to be formed is limited to the wavelength of the exposure light source used due to the diffraction phenomenon. Currently, a light source emitting ultraviolet rays is used, but it is not easy to use a light source with a shorter wavelength, and various new exposure methods other than photolithography have been studied to obtain better characteristics. Among them, electron beam exposure is more capable of processing many smaller features and patterns than photolithography. In actual machines that have been used, the development of electron beam exposure technology has been more advanced than other methods, and more attention has been paid to the electron beam exposure technology, which is considered to replace optical photolithography. However, because the electron beam exposure technology is low-yield 'compared to the segmenter, it is considered that it cannot be used for mass production of LSIs. This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (please read the precautions on the back before filling out this page) Order 538323 Α7 Β7 V. Description of Invention (>) Staff of Intellectual Property Bureau, Ministry of Economic Affairs Consumer cooperatives printed this idea on the basis of, for example, a single-stroke write-type electron beam exposure paradigm in which a set of single electron beams are continuously scanned for exposure and are being analyzed and investigated seriously for yield improvement. Physical and technical obstacles have not been reached after the conclusion. In other words, electron beam exposure cannot be used for mass production of LSIs, because electron beam exposure using the previously known single beam exposure method has only a low yield. In recent years, various applications A method for improving the yield of the electron beam exposure is proposed. In the electron beam exposure using a set of a single electron beam, a set of patterns is written by repeatedly scanning the electron beam across the pattern portion to fill the pattern image. In order to accurately write a good pattern corner, the electron beam must be focused into a smaller spot, which correspondingly increases the need for filling the image In this case, a blocking aperture array (BAA) method has been proposed in which a plurality of electron beams are generated and scanned across the pattern simultaneously, and the plurality of electron beams can be independently independently A component called a blocking aperture array (BAA) having a plurality of aligned apertures is turned on and cut off. This BAA method, like the single electron beam method, does not require the mask required in photolithography. In fact, the plurality of electron beams are arranged two-dimensionally, increasing the number of exposures while reducing the rate of change of the total current amount at the edge of the pattern, etc. Compared to the single electron beam method, when perpendicular to the scanning When the width of the pattern measured in the direction is large, the image filling efficiency according to the BAA method is greatly improved, but, for example, when a set of delicate patterns extends in a direction parallel to the scanning direction, there is no There are many improvements. In any case, the BAA method needs to scan the entire exposure range, and when there are few patterns to be exposed, the exposure time increases, as opposed to wanting The purpose, the paper ----- 5 scale applicable Chinese National Standard (CNS) A4 size (210χ: 297 mm) (Please read the back of the precautions to fill out this page)

538323 Α7 Β7 V. Description of the invention (>) Therefore, it is impossible to obtain sufficient output in the technical state of the visual inspection. Further '(Please read the notes on the back before filling out this page) BAA has a large number of orifices, which need to be smaller than 50 to 70% of the sample standard, and all BAA methods need to be properly operated . So 'the BAA must be tightly managed, which increases management time and causes problems with reduced yield. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Other methods proposed to improve output include a variable size rectangular method. In the variable-size rectangular method, two sets of substrates each having a set of rectangular apertures are arranged so that the apertures are opposed to each other, and an electron beam that is rectangularly shaped via the apertures in the first substrate is transmitted by using The beam is shifted so as to be emitted above the aperture of the second substrate, and then the electron beam transmitted through the aperture in the second substrate is shifted so as to be brought back to its original orientation. The shape of the electron beam being transmitted through the aperture in the second substrate is determined by the amount of offset, that is, the degree of overlap between the aperture and the electron beam irradiated onto the second substrate; therefore, the electrons The beam can be shaped into any desired rectangular shape by controlling the number of offsets. The exposure pattern is decomposed into rectangles, and the electron beam after being rectangularly shaped is shifted toward the emission position for exposure. Therefore, the variable-size rectangular method does not require the use of a mask required for photolithography. Using the variable size rectangle method, a large rectangular pattern can be exposed in a single exposure; therefore, when the exposure can be decomposed into a large rectangular pattern, the exposure can be effectively improved a lot, but the S exposure is small and separated In the case of rectangles, sufficient yield cannot be obtained. Although the single electron beam method, the BAA method, and the variable-size rectangular method described above do not require the use of masks such as those required for photolithography, it has been proposed Different electron beam exposure methods. 6 This paper size is applicable to China National Standard (CNS) 8 4 specifications (2i × 297 mm) 538323 A7 B7. 5. Description of the invention (today) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Block exposure method. In semiconductor devices, especially the area of the memory or the like 'in which the same type is repeated occupies a major part of the wafer. If a block mask having an aperture pattern corresponding to these repeated patterns is prepared ', the repeated patterns can be exposed in a single exposure. In actual semiconductor devices, there are various repeated patterns; therefore, if various orifice patterns corresponding to various repeated patterns are prepared and selected, most of the semiconductor element patterns can use the available block mask patterns. While being exposed. For patterns that do not have a corresponding block mask, exposure is formed using a combination of a block mask and a resizable rectangle method or the like. Because any complex pattern can be exposed in a single exposure, as long as a corresponding block mask can be supplied, the use of this block exposure method can greatly improve the yield. However, for semiconductor elements (microprocessors, etc.) with random patterns for logic or other purposes, the area in which the block exposure method can be applied is limited and the increase in yield is not satisfactory. . Further, because the square exposure method, like photolithography, uses a mask, and the mask must be generated separately, which increases the implementation time before the exposure can be actually formed. Further, the mask must be carefully managed, as dust on the mask will cause defects in the exposure pattern. Therefore, the time required for mask management increases the management time of the device, as in the case of photolithography, resulting in a problem that the actual yield is not improved as expected. At the same time, there is a problem that the cost required for masking products and management increases the cost of the product. Various methods proposed in the prior art for improving the electron beam exposure yield have been described above. In order to improve the yield, each exposure can be exposed (please read the precautions on the back before filling this page)

、 1T 7_ This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 538323 Α7 Β7 V. Description of invention (ς) The area printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs must be increased and reduced The time required for one exposure. To reduce the time required for each exposure, you can reduce the time required to properly set the electron beam, such as the time required to shape and shift the exposure pattern, or increase the electron beam current density per unit area to reduce each Exposure time for multiple exposures. The set time varies from one method to another and must depend on the method being used. When the electron beam current density increases, the electron beam becomes blurred due to the coulomb effect and the decrease in resolution. The effect of coulomb effect is also related to the size of the electron beam; if the size of the electron beam is increased while the current density of the electron beam remains unchanged, the problem of reduced resolution due to coulomb effect occurs. In order to solve these problems, TRGroves and RAKendall, in Nov / Dec 1998, J. Vac. Sci. Technol. B16 (6), ρρ. 3168-3 1 73, proposed an electron beam with a plurality of variable rectangular patterns. Electron beam exposure device for projection system. In this device, each projection line contains a set of independent electron beam sources, a set of variable rectangular shaped devices, and a set of electrostatic offset devices with a small offset range. The inventor of the present invention also proposed an electron beam exposure apparatus having a plurality of projection lines in Japanese Unexamined Patent Publication No. 10-128795 and other documents. In such devices having a plurality of independent projection lines, the problem of the Coulomb effect described above is reduced. However, the axial distance between the projection lines cannot be shortened to some limit, thus limiting the number of projection lines that can be provided in a group of devices, and therefore cannot sufficiently increase the yield. Further, because the axial distance between the projected lines is large ', the change in the line-axis distance due to a change or change in temperature in the temperature distribution is relatively relative to the minimum line width of the pattern to be exposed. Applicable to China National Standard (CNS) A4 specification (210 × 297 mm) (Please read the precautions on the back before filling this page) Order 538323 A7 __ B7 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Consumption Cooperative V. Invention Description) This leads to offset problems at the pattern joints. At present, compared with optical photoengraving, electron beam exposure can provide sufficiently good resolution without being affected by Coulomb's effect, and in practical devices, improvement in yield is a more important issue. As explained above, various methods for improving the yield in electron beam exposure have been proposed, but each method has its own problems. In the current state of the art, the square mask exposure method provides the highest yield, but as mentioned previously, it requires planning implementation time for preparing the mask, and its management is not easy, and it also increases management time. The above results make the effective yield not as much improved as expected. In the case of the BAA method and the variable-size rectangular method, the realization time of the plan for preparing the mask is not required, but the yield is lower compared with the square exposure method. This BAA method has the further problem of increasing the management time of managing BAA. On the other hand, the multi-projection method is not easy to improve the problem of sufficient output on its own, and it also has the problem that the resolution of the pattern decreases at the pattern joint. SUMMARY OF THE INVENTION It is an object of the present invention to provide an electron beam exposure apparatus which does not require planning for realizing time and can achieve highly efficient yield. In order to achieve the above-mentioned object, the electron beam exposure device of the present invention includes a device for dividing an electron beam emitted from a single electron beam source into a plurality of sub-beams, and then shaping each sub-beam into a rectangular shape of a variable size. Type device, the shaping device further includes a device for separately shifting each sub-beam, although in a small range, and the present invention uses first ____9 This paper size applies to Chinese National Standard (CNS) A4 specifications (210X 2W mm) (Please read the notes on the back before filling this page)

538323 A7 ___ B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (^) The focusing device and the offset device previously known focus the majority of the sub-beams and offset the electron beams over a wide range. More specifically, the electron beam exposure device of the present invention includes an electron beam source for generating an electron beam; a shaping device for shaping the electron beam; and a shifting device for changing the irradiation position of the electron beam on the sample And a projection device for focusing the shaped electron beam onto the sample, wherein the shaping device includes: a dividing device for generating a plurality of sub-beams by dividing the electron beam; and separately shaping each of the plurality of sub-beams into A required rectangular rectangular shaping device; and a sub-beam shifting device for separately moving the emission positions of the plurality of sub-beams. The electron beam exposure device of the present invention divides the electron beams generated by a single electron beam source into a plurality of sub-beams, uses a rectangular method of variable size to shape each sub-beam, and offsets each shaped electron beam. If the axial distance between the sub-beams is small, the offset effect between the sub-beams can be kept small and the problem of offset at the joint does not occur. Further, all sub-beams can be shifted over a wide range using previously known shifting devices. As a result, the beam can be split into a large number of sub-beams, and the yield can be greatly improved. At the same time, it is also possible to provide a plurality of electron beam sources and provide the configuration described above for each electron beam source, that is, the system divides the electron beam generated by the electron beam source into a plurality of sub-beams, and then uses a variable-size rectangular method to separate each sub-beam. Beam shaping, and offset each shaped beam. Further, it is preferable that the plurality of sub-beams are each shaped and shifted independently of each other. Although most of the sub-beams are generated by dividing the same electron beam, when most of the sub-beams have different currents, respectively, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇'297 mm) (Please (Read the notes on the back before filling out this page)

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Line 1T 538323 A7 B7 V. Description of the Invention ($) When the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints and distributes, it may be necessary to use repeated operations, so that the irradiation in the same area above the sample is divided into many different Sub-beam exposure. In that case, a set of the same sub-beam control signals are supplied to the sub-beams in the respective ethnic groups, which use the delay time required to add to expose the same pattern. Further, in this case, it may be necessary to reduce the dose of each sub-beam according to some divisions. Further, a set of blocker devices may be provided to control all sub-beams simultaneously to determine whether all the sub-beams are emitted onto the sample together, or a set of sub-beam blocker devices may be provided to control each of the majority independently Individual sub-beams to determine whether each of the sub-beams is emitted onto the sample; or, both devices can be provided and used in combination. If a fruit beam blocker is provided, each sub-beam can be emitted independently. When using a combination of these two devices, for example, when changing the number of offsets of an offset device with a large offset range, such as a primary offset device or a secondary offset device forming the offset device, the same barrier device Is used, and at other times, the sub-beam blocker device is used. A division device for dividing an electron beam into close sub-beams is realized using a substrate having a plurality of first rectangular shaped apertures arranged in a predetermined gap. Using this substrate, a plurality of sub-beams having a predetermined rectangular shape and arranged with a predetermined gap are generated. The rectangular shaping device includes a first shaping shifting device for respectively shifting each of the plurality of sub-beams, and a set of shaping holes having a plurality of second shaping openings in a rectangular shape corresponding to the predetermined gap configuration. Aperture array, and a second 11 for offsetting and reverting the plurality of sub-beams that have been shaped by a plurality of second integer apertures. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). (Please read the precautions on the back before filling this page), 11 538323 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (彳) Integer offset device; use this first integral offset device 'A plurality of sub-beams are emitted on the corresponding second shaping aperture in the shaping aperture array' and each sub-beam is shaped into a sub-beam and the overlap between the second shaping aperture illuminated by the sub-beam The shape defined by the area. The first and second integer offset devices each include two sets of integer offset substrates, each of which includes a plurality of apertures configured to correspond to the configuration of the plurality of sub-beams, and is formed on both sides of each aperture. A pair of offset electrodes forming an electrostatic field and a barrier electrode formed besides the position where the pair of offset electrodes are formed and adjacent to each of the apertures, wherein a set of integer offsets are used The direction of the electrostatic field formed by the pair of offset electrode groups on the substrate is 90 ° from the direction of the electrostatic field formed by the corresponding pair of offset electrode groups on the top of the other offset substrate, and the two sets of integer offset substrates Place them close to each other. The sub-beam offset device includes two sets of offset substrates, each including a plurality of apertures corresponding to the configuration of the plurality of sub-beams, and a pair of offset electrodes formed on both sides of each aperture for forming an electrostatic field. And a barrier electrode formed at a position other than the position where the pair of offset electrodes are formed and adjacent to each of the apertures, wherein the static electricity formed by the pair of offset electrodes on a set of integral offset substrates is used The field direction is 90 ° from the direction of the electrostatic field formed by the offset electrode group pair corresponding to the top of the other integral offset substrate, and the two sets of integral offset substrates are arranged close to each other. In the present invention, after a plurality of close sub-beams are shaped independently of each other, they need to be accurately shifted, and it can be said that, in order to achieve the above-mentioned purpose, in fact, the rectangular shaping device and the sub-beam shifting device have been Can be integrated and produced on a single substrate. As explained above, in this issue _______12 This paper size applies Chinese National Standard (CNS) A4 specifications (210X297). (Please read the precautions on the back before filling this page. )

538323 A7 B7 V. Description of Invention (νϋ) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, it is an element that may effectively increase output. The sub-beam blocker device includes: a set of blocker offset substrates, which include a plurality of apertures configured to correspond to the plurality of sub-beam configurations, and are formed on both sides of each aperture for forming an electrostatic field. A pair of offset electrodes, and a barrier electrode formed at a position adjacent to each of the openings except for the position where the pair of offset electrodes are formed; and a barrier electrode for blocking the offset of the offset electrode group pair Barrier plate for most sub-beams. Preferably, the substrate of the dividing device includes a plurality of integer orifice groups each including a plurality of first integer orifices, and any one of the plurality of integer orifice groups can be selectively moved into the One of the electron beam channels. In the substrate of the split device, only a plurality of first integer orifices need to be formed without wiring or the like; therefore, a plurality of integer orifice groups can be provided. Since the substrate of the singulation device is destroyed by the irradiation of the electron beam, a plurality of integer shaped orifice groups are provided and selectively used to improve the service capability. Generally speaking, offsets with a larger offset range require a longer setting time. In previously known devices, therefore, a set of primary deflectors, a set of secondary deflectors, and, if necessary, a set of secondary deflectors are combined so that the sub-beams can actually be high-rate and wide The offset range is shifted. In the device of the present invention, it is also necessary to use a combination of offsetters having different offset ranges and different setting times. In the present invention, because each sub-beam can be separately shifted, and because the main deflector, the secondary deflector, the secondary deflector, etc., shift all the sub-beams together by the same number, the deflection The shift method varies depending on the range of the sub-beam shift. In the first case, the offset ranges of the sub-beams are continuous or heavy each other. _______ 13 This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page )

538323 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs i. Invention Description (u). In this case, the offset range of all the aligned sub-beams is set to the offset range of the lowest order offset device, and the offset is a combination of a higher order offset device having a larger offset range. Mode is formed, as is known in the previous device. After the type exposure of the offset range of all the sub-beams is completed, the offset position of the offset device is moved to the adjacent offset position 'and the related processing procedure is repeated. In the case where the sub-beam offset ranges are not continuous with each other, the offset positions of the other offset devices (lowest sequential offset devices) constituting the offset device are moved by an amount equal to the width of the sub-beam offset range to expose the sub-beams. The full range of the beam array. The rest of the procedure is the same as the previously known device. For example, when the centers of the sub-beam offset ranges are separated from each other by a distance equal to four times the width of the sub-beam range, the area between each adjacent sub-beam offset range can be completely exposed by shifting the center position four times. . If the centers of the sub-beam offset ranges are separated from each other in the X-axis and γ-axis directions by a distance equal to four times the width of the sub-beam range, the exposure should be formed using a total of 16 shifted center positions. Normally, the offset device is constructed by combining a primary offset and a secondary offset; in this case, the offset for exposing the area between the offset ranges of adjacent sub-beams may use a secondary The offset is formed, but it is best to use a set of secondary offsets for offset, the offset range is smaller than the secondary offset and the offset setting time is shorter. Preferably, each sub-beam offset range is set smaller than its maximum offset range, and the pattern performed over the range between the divided offset ranges is exposed in a single exposure mode. This is suitable to prevent offset at the joint. Further, when the sub-beam offset ranges are configured to overlap each other, 14 paper sizes can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling this page)

538323 A7 B7 V. Description of the invention) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs so that when a certain type of exposure in the sub-beam offset range is completed, if the exposure in its adjacent sub-beam offset range is not When completed, the sub-beams that have already been exposed are used to expose patterns in the offset range of their adjacent sub-beams. This can improve yield. Description of the figures With reference to the figures and the following description of the preferred embodiment, other features, objects, and advantages of the present invention will be more obvious, of which: Figure 1 shows the whole of an electron beam exposure apparatus according to an embodiment of the invention Fig. 2 is a diagram showing an electron beam channel of an electron optical system in an electron beam exposure apparatus according to an embodiment of the present invention; Figs. 3A and 3B are diagrams showing an electron optics in an electron beam exposure apparatus according to an embodiment of the present invention Figures of a group of electron beam channels of the system; Figures 4A and 4B are diagrams showing examples of the structure of a group of first and second integer aperture arrays in an electron beam exposure apparatus according to an embodiment of the present invention; FIG. Is a diagram showing a group of offset array substrates in an electron beam exposure apparatus according to an embodiment of the present invention; FIG. 6 is a top plan view of a group of offset array substrates; and FIG. 7 is a view showing the offset array substrates. Figures of apertures, electrode shapes, and electric fields formed by electrodes in a set of aperture units; Figure 8 shows the first integer offset array 4, the second integer offset array 5, and the sub-light A side view and an enlarged cross-sectional view of the offset array 9; Figures 9A to 9D are figures for explaining the division of the offset range according to one of the embodiments; (Please read the precautions on the back before filling this page) 、 11 _line ·! · __15 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 538323 A7 B7 V. Description of the invention u 3) The first 10 A and 1 OB drawings are used to explain according to the embodiment A group of offset patterns; and FIG. 11 is a graph showing the apertures, electrode shapes, and electric fields formed by the electrodes in the group of aperture units of the offset array substrate in the modified example. . _Description of the preferred embodiment. FIG. 1 is an exploded view showing the structure of a group of electron beam exposure devices according to an embodiment of the present invention. FIG. 2 is a diagram for explaining an electron beam channel in the electron optical system of FIG. 1. The patterns, and Figures 3A and 3B are graphs illustrating a group of sub-beam channels in the center. In the figure, the reference number 1 is a group of electron guns, 3 is a group of first integer aperture arrays, 4 is a group of first integer offset arrays, 5 is a group of second integer offset arrays, 6 Is a set of second integer aperture arrays, 7 is a set of sub-beam blockers, 8 is a set of shutters, 9 is a set of sub-beam offset arrays, 10-1 to 10-9 are magnetic lenses, and 11 is a Set of common barriers, 12 is a set of primary offsets, 13 is a set of secondary offsets, 14 is a set of aberration / Coulomb blur correctors, 15 is a set of wafers, and 16 is a vacuum device clamp The platform mechanism on which the wafer 15 is fastened and the wafer 15 is moved, 17 is a set of controllers for the platform mechanism, and 18 is a set of reflections used to detect the focus condition and the position of the reference mark Electronic detector, 19 is a set of detection signal processing circuits, 20 is a set of primary offset controllers, 21 is a set of secondary offset controllers, 22 is a set of aberration / Coulomb blur corrector controllers, 23 is a group of sub-beam offset array controllers, 24 is a group of common blocker controllers, 25 is a group of sub-beam blocker controllers, 26 is a group of second integral Offset array controller, 27 is a first set of integer partial ___16 this paper scale applicable Chinese National Standard (CNS) A4 size (210X 297 mm) (Please read the back of the precautions to fill out this page)

Line 1T! Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 538323 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling this page) Shifting array controller, 28 is a set of electronic optical system control Device, 29 is a group of control computers, 30 is a large-scale storage element, 3 1 is a group interface for connecting the control computer to various device parts, 32 is a group for connecting to the main system computer Network adapters, 33 is a group of computer buses, 34 is a group of control buses, 35 is a group of Faraday cups, and 36 is a group of secondary shifters. In the figure, the solid line and the dotted line leading from the electron gun 1 to the wafer 15 indicate the outermost channels and optical axes of the electron beams emitted from both edges of the electron gun, respectively. The basic configuration of the electron beam exposure apparatus of the embodiment of the present invention is the same as that of the conventionally known apparatus, and the details not shown here are the same as those of the conventionally known apparatus. For example, the electron beam channel, wafer 15, stage mechanism 16, deflector, and corrector are contained within a cylindrical vacuum chamber. The following description relates only to those features which are characteristic of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The electron beam path of the electron optical system in the embodiment will be described with reference to Figs. 2 and 3A and 3B. Reference numerals 2-1 to 2-8 indicate the magnetic field axes generated by the respective magnetic lenses 1 0-1 to 10-8. The electron beam emitted from the electron gun 1 is first focused by the magnetic field 2-1 and is then emitted onto the first integer aperture array 3. The first aperture array 3 contains a plurality of rectangular apertures arranged in an array, which will be described later, and the electron beam passing there is divided into a plurality of sub-beams. The electron beam passing through the central aperture 42 is also exposed as a set of sub-beams, as shown in FIG. The sub-beam group is converged by the magnetic field 2-2, and enters the first integer offset array 4 halfway through the converging procedure. The first integer-shaped offset array 4 is provided above the electron beam magnification ratio at the same position as the first integer-shaped aperture array 3. And the second integer type is 17 and this paper size is applicable to Chinese National Standard (CNS) A4 specification (210X 297 mm) 538323 _ B7 V. Description of the invention () Printed by A7 shift array of the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Two integer aperture array 6, sub-beam blocker 7, and sub-beam offset array! J 9 is also set the same. The first integer-shaped offset array 4 also contains holes □ as in the first integer-shaped aperture array 3, and offset electrodes are formed on both sides of each aperture so that the sub-beams can be perpendicular to the optical axis (Z The X- and Y-axis directions are shifted by a desired amount. Figure 3A shows the case where the sub-beam is not shifted by its corresponding first integer offset 4-1, and Figure 3B shows the sub-beam is shifted by its corresponding first integer offset 4-1 Situation. After being converged, the group of sub-beams passes through the magnetic field 2-3 and enters the second integer-type offset array 5. In the second integer offset array 5, the offset corresponding to each sub-beam reverses the offset corresponding to the offset formed in the first integer offset array 4, so the channel is reversed back to the original Direction. The second integer-shaped aperture array 6 immediately follows the second integer-shaped offset array 5, wherein the degree of overlap between each sub-beam and its corresponding aperture is based on the corresponding offset in the first integer-shaped offset array 4. The amount of offset applied by the shifter varies. As shown in Figure 3A, when the sub-beams are not shifted by the first integer offset 4-1, half of the sub-beams pass through the aperture. On the other hand, when the sub-beams are shifted by the first integer offset 4-1 as shown in FIG. 3B, most of the sub-beams pass through the aperture. Reference number 5-2 shows the offset applied by the second integer offset array 5-1; as seen, the offset direction is reversed from the offset applied by the first integer offset 4-1. If the offset direction is inverted from Figure 3B of the display, the sub-beam passes through the aperture to become narrower. These offsets are applied to the X-axis and Y-axis directions to shape the electron beam into various rectangular shapes. The sub-beam groups are then converged by the magnetic field 2-4 and land on the sub-beam blocker 7. When a group of sub-beams is deflected by the sub-beam blocker 7 __18 This paper size is applicable to China National Standard (CNS) A4 (2! 〇X297 mm) (Please read the precautions on the back before filling this page}

538323 Α7 Β7 V. Description of the invention ((M When the printed device of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy is shifted, as shown in Figure 3A, the sub-beam is blocked by the shutter 8. On the other hand, when the sub-beam is not When the deflector in the beam blocker 7 is shifted, the sub-beams pass through the shutter 8 as shown in Figure 3B. In this way, the on / off control can be formed on each sub-beam to emit or not emit sub-beams. The beam reaches the wafer 15. After passing through the magnetic field 2-5, the sub-beam groups enter the sub-beam shifter array 9. As shown in Figures 3A and 3B, the irradiation position on the wafer 15 is based on Whether the corresponding deflector in the sub-beam shifter array 9 is shifted by applying an offset. The sub-beam groups are then focused onto the wafer 15 via the magnetic fields 2-6, 2-7, and 2-8. Section 4A Figures 4B show structural examples of the first and second shaped aperture arrays 3 and 6. As shown in Figure 4A, the shaped aperture arrays are formed from a silicon wafer sheet or the like. The aperture area 41 of the aperture array is reduced in thickness by etching or the like, And the square aperture 42 is opened in the aperture area 41 by etching. In this embodiment, for example, 20 × 20, that is, a total of 400 apertures each having a square of 15 μm are formed with a gap of 60 μm. A set of 60: 1 reduced images of the integer aperture array are projected on the plane of the wafer 1 5. If the projected images are not deformed, they are each focused into a rectangular sub-beam of 0.2 5 μm square each. It is arranged on the wafer 15 with a gap of 1.0 μm. As shown, 5x5, that is, a total of 25 aperture areas 41 are provided. Since the aperture 42 is simply opened and no wiring is required, most Each aperture region 41 can be provided on the shaped aperture array substrate. Because the apertures can be deformed due to heat or the like after a long period of use, the shaped aperture array substrates, especially Receives electrons on its entire surface ___19 This paper size applies Chinese National Standard (CNS) Α4 specification (210X 297 mm) (Please read the precautions on the back before filling this page)

«8323 A7 B7 i. Description of the Invention (q) The first integer aperture array 3 of the bundle needs to be replaced or other repaired according to its use condition. Utilizing the provision of a plurality of aperture areas 41 and constructing the system so that each aperture area 41 can be selectively placed in the electron beam channel using a moving mechanism (not shown), and its replacement cycle can be extended And easy to maintain. Fig. 4B is a cross-sectional structure diagram showing an integer array of apertures; in this example, a group of arrays of aperture arrays 41 are shown. Reference number 43 is a set of silicon (Si) substrates, 44 is a set of boron diffusion insulating layers, 46 is silicon, and 47 is a set of protective metal films. After the thickness of the aperture area 41 is further reduced by etching, the aperture 42 is formed. Fig. 5 is an offset array substrate 50 used to constitute the first integer offset array 4, the second integer offset array 5, the sub-beam blocker 7, and the sub-beam offset array 9. This substrate 50 is also formed of a set of silicon wafer sheets or the like, and a set of offset array regions 5 1 is formed to form an offset array, and its thickness is reduced, such as in the aperture region 4 1 of the shaped aperture array. In the case. Reference numeral 52 shows a signal electrode plate for supplying a signal to be applied to an offset electrode formed in the offset array area 51, and 53 indicates a group of ground (GND) electrode plates. Figure 6 is a top plan view of a group of offset array regions 51. As shown, the square apertures 56 are configured corresponding to the configuration of the apertures 42 in the integer aperture array. A set of positive electrodes 53 and a set of negative electrodes 54 are arranged along two opposite sides of each aperture 56, and a set of barrier ground electrodes 55 are formed on each of the other sides. Therefore, in this embodiment, 20x20, that is, a total of 400 square meters of 20 paper sizes are applicable to China National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling this page)- Order line _ · Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 538323 B7 V. Description of the Invention ((s) The A7-shaped orifices 56 printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economy are formed with a gap of 60 μm. Each orifice 56 It is about 25 μm square, which is slightly larger than each aperture 42 in the array of integral apertures. Figure 7 is a diagram showing the aperture, the shape of the electrode, and the electric field formed using the electrodes in a set of aperture units 57 As shown, the positive electrode 53 and the negative electrode 54 are symmetrical to each other, and the center portion thereof is slightly bent at both ends to form a parallel electrode. The barrier ground electrode 55 is divided from the respective adjacent aperture units. The uniform electric field shown has parallel and equidistant power lines in the central portion, which are formed using electrodes having the shape described above. If the number of offsets provided by the offset array substrate 50 is inaccurate Then, a sub-beam of a desired shape may not be obtained or the exposure position may be shifted; therefore, in terms of the number of shifts provided, the shift array substrate 50 requires extremely high accuracy. In view of this, each The apertures 56 are formed in a square shape to ensure a uniform electric field structure. Each aperture 42 in the shaped aperture array has the shape shown by reference number 5 8; the sub-beams are shaped through the aperture 42, so it is relatively easy to penetrate Pass through the opening 5 6 and be accurately offset by the uniform electric field. Turn back to FIG. 5 and connect the signal electrode plate 52 and the GN D electrode plate 53 to the positive electrode 53 and the negative electrode in the offset array area 51. Many of the wirings of 54 are formed in the offset array area 51 in the center and in the multi-layer area between the surrounding signal electrode plate 52 and the GND electrode plate 53. The sub-beam blocker 7 can be used only as shown in the fifth to seventh One set of offset array substrates 50 is constructed in the figure, because its function is to shift the sub-beams in a single direction; on the other hand, for the first integer offset array 4 and the second integer offset array 5, And the sub-beam offset array 9 because the sub-beam Must be offset in two directions perpendicular to the axis of the electronic optical system, so two sets of offset 21 paper sizes are applicable to China National Standard (CNS) Α4 size (210X 297 mm) (Please read the precautions on the back before (Fill in this page)

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 538323 A7 _B7___ V. Description of the Invention (^) The array substrate 50 is used. FIG. 8 is a diagram showing the structure of the first integer offset array 4, the second integer offset array 5, and the sub-beam offset array 9. As shown in Fig. 8, two sets of offset array substrates 50 are arranged close to each other. In the offset array region 51 of the substrate 50, apertures 56 are formed in the substrate, and a positive electrode 53, a negative electrode 54, and a barrier ground electrode 55 are formed on one side of the substrate. The signal electrode plate 52 and the GND electrode plate are formed on one side of the substrate in the same manner. In the offset array region 5 1 ′ of another substrate 50 ′, an aperture 56 ′ is formed in the substrate, and a positive electrode 53 ′, a negative electrode 54 ′, and a barrier ground electrode 55 ′ are formed in the other of the substrate. Side up. The signal electrode plate 52 'and the GND electrode plate are formed on the substrate side. The two sets of substrates 50 and 50 'are arranged such that their non-electrode sides face each other and the aperture 56 is aligned with the corresponding aperture 56', as shown in the figure. Since the electrodes, etc. are not formed on the opposite side, the two sets of substrates can be placed very close to each other. The positive electrode 53 and the negative electrode 54 are in a direction of 90 ° between the positive electrode 53 'and the negative electrode 54'. Therefore, with the applied voltage between the positive electrode 53 and the negative electrode 54, and between the positive electrode 53 'and the negative electrode 54', an electric field is formed in the direction of the reference numbers 6 1 and 6 1 'of the display so that the The light beam passes through the corresponding apertures 56 and 56 'and may be shifted in a direction forming 90 ° with each other. Moreover, the achieved offset can independently shift the sub-beams in two directions of the X-axis and Y-axis directions of the vertical optical axis. In this embodiment, the numbers of the apertures 56 and 56 'in the X-axis and Y-axis directions and their gaps are the same. Therefore, when two sets of offset array substrates 50 are manufactured using the same manufacturing process, each offset is constituted, and it is _____22 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please (Read the notes on the back before filling out this page)

538323 Α7 Β7 V. Description of Invention (/) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs They are arranged back to back with their axes at 90 ° to each other. As explained earlier, in this embodiment, the first integer offset array 4, the second integer offset array 5, the sub-beam offset array 9, and the sub-beam blocker 7 are each disposed at the electron beam magnification. The ratio is the same as that of the first integer orifice array 3. This makes it possible to use the same aperture configuration for each substrate to be used to constitute an offset. Therefore, the first integer offset array 4, the second integer offset array 5, and the sub-beam offset array 9 are each formed using two sets of offset array substrates 50, which are two sets of offset array substrates. 50 is manufactured using the same manufacturing procedure, and the sub-beam blocker 7 is also constructed using the same substrate. This is useful for reducing the effects of errors that occur during the manufacturing process. Turning back to FIG. 1, the first integer offset array controller 27, the second integer offset array controller 26, the sub-beam offset array controller 23, and the sub-beam blocker controller 25 generate some driving signals. The driving signals will be applied to the signal electrodes on the first integer offset array 4, the second integer offset array 5, the sub-beam blocker 7, and the sub-beam offset array 9, respectively. In the device of this embodiment, a primary deflector 12 as a group of electromagnetic reflectors, a secondary deflector 13 as a group of electrostatic deflectors, and a secondary deflector as a group of electromagnetic offsets 36—to form a group of common offset devices. The size of the offset range decreases according to the order of the primary offset device 1, 2, the secondary offset device 1, 3, and the secondary offset device 36, and the offset rate (representing the length of the offset setting time) is sequentially The order of the primary offsetter 36, the secondary offsetter 1, 3, and the primary offsetter 12 is reduced. In the structure shown, the secondary deflector 36 is arranged outside the secondary deflector 13, but it can be arranged at the secondary _-_ 23. This paper size applies the Chinese National Standard (CNS) Α4 specification (210 × 297 mm) Li) (Please read the notes on the back before filling in this page)

538323 A7 B7 V. Description of the invention (y) To offset 13 above, in this case, the secondary secondary offset device 36 may be constituted as a group of electrostatic offset devices. The construction of the electron beam exposure apparatus according to this embodiment has been described above; the other parts not explicitly explained above are basically the same as those of the conventionally known apparatus. Next, referring to Figs. 9A to 9D and Figs. 10A and 10B, the divided offset range will be explained according to this embodiment. As explained earlier, in the conventionally known electron beam exposure apparatus, different characteristics of the shifter are combined so that the electron beam can be shifted efficiently at a high speed over a wide shift range. In fact, using a secondary shifter, etc., to continuously perform exposures to correct the amount of platform movement when the platform is moved, the yield can be further increased. This embodiment uses the same basic method. In this embodiment, because each sub-beam can be independently shifted, and because the primary deflector, the secondary deflector, the secondary deflector, etc., shift all the sub-beams together with the same number, There are different offset methods depending on the range of the sub-beam offset. The offset method when the adjacent sub-beam offset ranges are overlapping or continuous with each other is different from the offset method when they are separated from each other. This embodiment will be described by assuming that the offset ranges 79 of adjacent sub-beams are separated from each other, as shown in FIG. 10. FIG. 9A shows the arrangement of the wafer 70 formed on the wafer 15. Since each wafer 70 has a larger offset range than the electron beam exposure apparatus, the stage must be moved to expose the entire wafer 70. There are two sets of methods that can be used: one method is called a step-and-repeat method, in which the platform is moved and then stopped to expose the pattern within the offset range, and when the exposure is completed, the ____24 sheets of paper Standards are applicable to China National Standard (CNS) A4 specifications (210X 297 mm) (Please read the precautions on the back before filling this page)

Printed by 1T Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (> >) Printed by Employee Cooperative of Intellectual Property Bureau of Ministry of Economic Affairs 538323 A7 _ _ B7 The platform was moved again and then stopped to expose adjacent areas ; Another method is the continuous movement method, in which a part of the pattern is exposed when the platform is moved into the offset range, and when the platform is moved, a secondary offsetter is used to correct the amount of platform movement. Both methods can be used in the present invention, but for the sake of explanation 'the explanation given below is to take the step-and-repeated method as an example. As shown in Figure 9A, the first offset corresponding to the main offset range of the electron beam exposure device is changed by moving the number of platforms in a unique set of directions (fixed in the X direction and moving in steps only in the Y direction). The width of the shift range (appropriately set within the maximum shift range), so that the wafers in the same row are sequentially exposed. The area exposed by the upper width at this time is called an action frame 71. When the exposure of a set of action frames 71 is completed, the next action frame is exposed by moving the platform in the opposite direction, as shown in Fig. 9B. Reference number 72 indicates the direction in which the platform moves. In the example shown, the width of the first offset range 73 of the electron beam device is 1/3 of one side of each square wafer; therefore, the entire area of a set of wafers can be exposed in nine steps-and-repeated operations, And within a set of action frames, a set of wafers are exposed in three steps. As shown in Fig. 9C, the first offset range 73 is divided into second offset ranges 75 (35 ranges in the display example) each corresponding to the secondary offset range. The offset position of the primary offset device 12 is fixed at the center of a group of the second offset range 75, and the offset in the secondary offset device 13, the secondary offset device 36, and the sub-beam offset array 9. The number of shifts is changed to expose the second offset range. 25 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

538323 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Five Ministry of Economic Affairs A7 B7 Invention specifications (models within 75. When the exposure of the models within the second offset range 75 is completed, the offset position of the main offset 12 It is moved and fixed at the center of the next second offset range 75, and the same procedure is repeated. When this procedure has been formed on all the second offset ranges 75 within the first offset range 73, The exposure of the first offset range 73 is completed, and the exposure procedure is repeated for the next first offset range 73 in Figure 9B. Reference number 74 shows the path of the main offset position change. As shown in Figure 9D, Each second offset range 75 is divided into a third offset range (16 range in the display example). The offset position of the secondary offset device 13 is fixed at the center of the third offset range 77, at The number of shifts in the secondary minor shifter 36 and the sub-beam shift array 9 is changed to expose the pattern within the third shift range 77. When the pattern is exposed within the third shift range 77 When completed, the offset position of the secondary offsetter 13 It is moved and fixed at the center of the immediately following third offset range 77, and the same procedure is repeated. When this procedure has been formed on all the third offset ranges 77 within the second offset range 75, the first The exposure of the second offset range 75 is completed, and the exposure procedure is repeated for the next second offset range 75 in Figure 9C. Reference number 76 shows the path of the secondary offset position change. Figures 10A and 10B are shown in Graph of exposure progress in each third offset range 77. Reference number 79 indicates each sub-beam offset range of the sub-beam offset array 9. There are 20x20 = 400 sub-beams, and as described above, the sub-beams are on the wafer The offset ranges are each 0.25 μm squared and separated from each other by 1.0 μm. Each third offset range 77 is divided into 400 fourth offset ranges 82, and each fourth offset range 82 is further divided into 16 each. Corresponds to a group of sub-beams 26 This paper size is applicable to China National Standard (CNS) Α4 size (210 × 297 mm) (Please read the precautions on the back before filling this page)

538323 Α7 Β7 V. Description of the invention (&4; 4) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumer Cooperative, the fifth offset range of the offset range. After changing the number of offsets of the secondary sub-beam shifter 36 to place the secondary sub-beam shifter 36 at the center of each S-th offset range 83, as shown in FIG. 10B, 400 fifth offsets The range 83 is exposed using the sub-beam offset array 9. When the exposure is completed, the number of shifts of the 'secondary sub-beam shifter 36' is changed so as to be placed at the center of the next fifth shift range 83, as indicated by the path in Figure 10B, and the same The procedure is repeated. When 16 fifth offset ranges have been exposed for each sub-beam, all the exposures of the fourth offset range 82, that is, the exposures of the third offset range 77 are completed. In this example, the offset range of the secondary offset device 36 should include at least 4 × 4 fifth offset ranges 83, that is, 1/8 0 of the offset range of the secondary offset device 13 (which corresponds to To a set of second offset ranges 75). In each sub-beam offset range 79, each sub-beam is independently shaped into a rectangle 81 using the first integer offset array 4 and the second integer offset array 5 and is shifted by the sub-beam according to the exposure position. The array 9 is shifted after being emitted for exposure, as shown by reference number 80. In order to expose the rectangle multiple times within a set of sub-beam offset ranges 79, the same procedure is repeated an equal number of times. For example, in the example on the left, the rectangle is exposed once; in the center, the rectangle is exposed twice; and on the right, the rectangle is exposed four times. As shown, the left area below the rectangle is set as the reference position; even after integer shaping, the left area below the rectangle is kept above the same position, and in this case, the sub-beams are shifted so that the left area below the rectangle is moved to Desired location. As explained above, in this embodiment, the platform is moved so that the center of the first offset range 73 is aligned with the optical axis, and then the offset of the main deflector 12 is ______27. This paper size applies to the Chinese National Standard (CNS) M Specifications (21〇 × 297 mm) (Please read the precautions on the back before filling this page)

538323 A7 B7 V. Description of the invention (> <) The print shift position of the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is set at the center of a second offset range 75, and the offset position of the secondary offset device 1 3 Is set at the center of a third offset range 77, and the offset position of the secondary offset device 36 is set so that each sub-beam offset range is aligned with one of the fifth offset ranges 83 to form a third Each of the fourth offset ranges 82 of the offset range 77 is divided into fifth offset ranges 83; in this case, the first integer offset array 4 and the second integer offset array 5 are integer The rectangular sub-beam is shifted by the sub-beam shifter array 9 for exposure. When the exposure of each sub-beam offset range is completed, the offset position of the secondary minor shifter 36 is moved to the next fifth offset range 83, and the same procedure is repeated. This process is repeated 16 times to complete the exposure of the third offset range 77. Next, the offset position of the secondary offsetter 13 is moved to the center of the next third offset range 77, and the same procedure is repeated. This procedure is repeated 16 times to complete the exposure of the second offset range 75. Further, the offset position of the main offset device 12 is moved to the center of the next second offset range 75, and the same procedure is repeated. This procedure is repeated 36 times to complete the exposure of the first offset range 73. Next, the stage is moved in the Y direction and the exposure of the next first offset range 73 is performed in the same manner, and the exposure procedure is repeated until a set of action frame exposures are completed. Then, the platform is moved in the X direction to perform the same processing of the next action frame. In this way, all the patterns on the wafer 15 are exposed. Next, an exposure procedure formed in the electron beam exposure apparatus of this embodiment will be described below. First, the units are adjusted. In this adjustment, each unit is set to the best condition, and at the same time, the difference between the sub-beams in the sub-beam-related units ___28 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please first (Read the notes on the back and fill out this page)

538323 V. Description of the invention (乂) The data related to A7 B7 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs were collected. The electron gun 1 and the magnetic lenses 10-1 to 10-9 are adjusted using an electronic optical system controller 28. Further, the primary offsetter 12, the secondary offsetter 13, and the secondary offsetter 36 are adjusted, and information on the number of their offsets is collected. These adjustments are the same as those made by previously known devices. The first integer orifice array 3 and the second integer orifice array 6 are each provided with a plurality of orifice regions 41, as described previously, and a set of orifice regions 41 are selected. First integer aperture array 3, second integer aperture array 6, first integer offset array 4, second integer offset array 5, sub-beam blocker 7, sub-beam offset array 9, and shutter 8 is adjusted and uses alignment jigs or the like for alignment. At this time, information on the characteristics of each deflector of the sub-beam offset is also collected and stored. Further, the aberration / Coulomb blur corrector 14 and the like are adjusted and their data are collected. For the above adjustment and data collection, the reflection electron detector 18, Faraday cup 36, etc. are used. Based on the data thus collected, the correction data is set in the primary offset controller 20, the secondary offset controller 21, the aberration / Coulomb blur corrector controller 22, the sub-beam offset array controller 23, and the common block Controller 24, sub-beam blocker controller 25, second integer offset array controller 26, first integer offset array controller 27, electronic optical system controller 28, and so on. The control computer 29 generates exposure information for each writing frame from the "L SI chip-writing data" and "wafer layout and exposure status information" stored in the large-scale storage element 30. At this time, for each The exposure range is divided, and the exposure information is generated, as described with reference to Figures 9A to 9D and Figures 10A and 10B. 29 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the note on the back first (Fill in this page again)

538323 A7 B7 V. Description of the invention (d) (Please read the notes on the back before filling this page) For exposure, the common blocker 11 is set to block the entire beam and the sub-beam blocker is also set in the blocking position. The wafer 15 is clamped on the platform 16 and the platform 16 is moved, as previously described with reference to FIGS. 9A to 9D and FIGS. 10A and 10B to set the primary deflector 12 and the secondary deflector 1 3 Offset position. In this case, the blocking condition of the common barrier 11 is released. Then, the offset position of the secondary minor shifter 36 is set, and the exposure starts. For the consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, each sub-beam can be independently controlled and exposed in a separate range for its shape and offset position, but as previously suggested, The beam is blurred. This blur is corrected using the aberration / Coulomb blur corrector 14, but for a sub-beam, if the current amount becomes larger or if the current changes significantly, its correction is not required. Some sub-beam write ranges contain a large number of patterns, and some contain only a few patterns or no patterns at all. Basically, the number of exposures is determined by the number of patterns included in the exposed range; depending on the range to be exposed, the number of exposures can be large or small. In view of this, in a range in which the number of exposures is small, the exposure order is adjusted so that the maximum current amount per exposure is as small as possible and the change in the amount of current between exposures is reduced. For example, the range (3,1) on the left of Figure 10A contains a large pattern with one exposure, and the range (5,1) in the center contains a relatively small pattern with two exposures, and is on the left. (M, 1) contains a small sample with four exposures. In the example shown, exposure is formed using exposure in some steps, such as' Only a set of patterns in (m, 1) were exposed during the first exposure, and (5, 30 paper sizes apply China National Standard (CNS) A4 specification (210X 297 mm) 538323 A7 B7 i. Invention description (> 2) Printed by the consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economy 1) One of the sample types and (m, 1 One of the patterns in) was exposed in the second exposure, the remaining patterns in (5,1) and one of the patterns in (m, 1) were exposed in the third exposure And the patterns in (3,1) and the remaining set of patterns in (m, 1) were exposed in the fourth exposure. In fact, these exposures are made for an exposure range of 400 sub-beams. This is sufficient to reduce the maximum amount of current per exposure while also reducing the change in the amount of current between exposures. Using the exposures formed as described above, pattern exposures in 400 fifth offset ranges 83 are completed. Thereafter, the same exposure procedure is repeatedly formed using the moving platform and changing the offset positions of the secondary offsetter 36, the secondary offsetter 13, and the primary offsetter 12 until it is above the wafer 15 All patterns have been exposed so far. The electron beam exposure apparatus according to the embodiment of the present invention has been described above, but it is also possible to have various modifications. For example, the positive electrode 53 and the negative electrode 54 formed on the shifter array substrate 50 of the embodiment have been described as having the shapes shown in FIG. 7, but these can be formed in parallel as shown in FIG. 11 electrode. However, in this modification, since a range in which a set of uniform electric fields can be formed becomes smaller, if the same sub-beam size is also used here, the size of the aperture unit 57 and the gap of the sub-beams must be increased. In the example in FIG. 7, the aperture gap is 1/4 of the electron beam size and the sub-beam utilization efficiency is 1/16, and in the example in FIG. 11, the aperture gap is 1/4 of the electron beam size. 6 And the utilization efficiency of the photo-freeze is 1/36. Although the sub-beam utilization efficiency is reduced by about half, it is sufficient for practical use. 31 This paper size applies to China National Standards (CNS) A4 specifications (210 X 297 mm) (Please read the notes on the back before filling this page)-Threading !! 538323 A7 B7 i. Description of the invention (yp in In the embodiment, in addition to the primary deflector 12 and the secondary deflector 13, a secondary sub-beam offsetter 36 is provided, and the discretely configured sub-beam offset range 79 is moved, but the secondary The beam shifter 36 may be omitted and the sub beam shifter 13 may be configured to perform this shift. Further, in the embodiment, the sub beam shift range 79 has been explained to be separated from each other, such as the 10A It is shown in the figure, but the sub-beam offset range 79 can be made continuous by increasing the number of offsets of each group of offsets in the sub-beam offset array 9. In that case, the secondary sub-beam offset is used. As shown in FIG. 10B, the position does not need to be achieved, but the third offset range 77 is exposed by changing only the offset position of each sub-beam. Further, each sub-beam offset range 79 Can be set more than its maximum offset range With the supply, the pattern that passes the boundary line is exposed in one exposure between the divided offset ranges. This reduces the possibility of offset at the joint. When the sub-beam offset ranges are configured to overlap each other, it can be supplied so that When the pattern exposure in a certain sub-beam offset range is completed, if the exposure 尙 in its adjacent sub-beam offset range is not completed, the sub-beam that has been completed exposure is used to expose its adjacent sub-beam offset. Move the pattern in the range. This can improve the yield. Further, when using several sub-beam exposures to perform exposure in some steps, it appears that the upper limit of the total current amount of the sub-beams can be preset, and even the exposure program Is divided into steps and when the current 値 exceeds this upper limit, the number of exposures can be set larger than the maximum number of patterns in the sub-beam offset range. In this case, because the number of exposures increased by 32 Paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page)

Line 1T !! Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 538323 A7 B7 V. The description of the invention (7 °) increases the exposure time ', but because this situation does not happen often, the deterioration of effective output can be reduced. Ignored ° As explained above, according to the present invention, 'because many exposure uses continue to make a variable seven-size rectangular method, it is formed to' make a substantial improvement in yield 'and the yield achieved is comparable or higher than the utilization Yield from the block exposure method. Further, since it neither needs to be in the square exposure method? The time required for the plan realization of the block mask preparation measures is not required, and the block mask management is not required, so the management time is reduced and the effective output is further increased. This can be used in a large number of LSI production processes, and allows electron beam exposure apparatuses with a high accumulation of LSIs to be mass-produced at low cost. (Please read the precautions on the back before filling in this page) Ordering line! Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ____33 This paper size applies to China National Standard (CNS) A4 (210X297 mm) 538323 A7 B7 Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau. 5. Description of the invention (々1) Component reference table 1 ... Electron gun 2-1 to 2-8 ... Magnetic field axis 3 ... First integer aperture array 4 ... One integer offset shifter array 4- 1 ... first integer offset shifter 5 ... second integer offset shifter array 5- 1 ... second integer offset shifter array 5-2 ... offset 6 ... second integer aperture array 7 ... sub-beam blocker 8 ... shutter 9 ... sub-beam shifter array 10-1 to 10-9 ... magnetic lens 11 ... Baffle 12 ... Main Offset 13 ... Second Offset 14 ... Aberration / Coulomb Blur Corrector 15 ... Wafer 16 ... Platform 17 ... Control 18 ... electronic detector 19 ... detection signal processing circuit (please read the precautions on the back before filling in this page)

、 1T __34 This paper size is applicable to China National Standards (CNS) A4 specification (210X 297mm) 538323 V. Description of the invention ($ 7) A7 B7 20 printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs ... Main offset controller 21 ... secondary offset controller 22 ... aberration / Coulomb blur corrector controller 23 ... sub-beam offset array controller 24 ... blocker controller 25 ... sub-beam blocker controller 26 ... 2nd integer offset array controller 27 ... 1st integer offset array controller 28 ... electronic optical system controller 29 ... control computer 30 ... storage element 3 1 ... interface 32 ... ... network adapter 33 ... computer bus 34 ... control bus 3 5 ... Faraday cup 3 6 ... secondary offset 4 1 ... orifice area 4 2 ... orifice 4 3 ... a piece of Shi Xi 44 ... a boron diffusion insulation layer 4 6 ... Shi Xi 47 ... protective metal film 50 ... … Offset Array Substrate 35 This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page)

538323 A7 B7 V. Description of the Invention (Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 50, ..... Substrate 5 1 ".… Offset Array Area 52 ···… Signal Electrode Plate 53 ···· Positive Electrode 53, ······ Positive electrode 54 ····· Negative electrode 54 ······ Negative electrode 55 ···… Barrier ground electrode 56 ···· Aperture 56 '······ Orifice 57 ... Orifice unit 58 ... Shape 6 1 ... Direction 61, ... Direction 70 ... Wafer 7 1 ... Action frame 72 ... ·… Platform movement direction 73… first offset range 74 ···… main offset position change path 75 ···… second offset range 76 ".… secondary offset position change path 77 ···… The third offset range 78 ... The sub-beam offset range 79 " .... the sub-beam offset range 36 This paper size is applicable to China National Standard (CNS) Α4 specification (210 × 297 mm) (please read the back first) (Notes for filling in this page)

Line 1T · 538323 A7 B7 V. Description of the invention (Order +) The first direction of the moment shots Wai Fan Fans luij shifted deviation 45 (Please read the precautions on the back before filling this page) # 1

Line 1T · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs t 37 This paper size applies to China National Standard (CNS) A4 (210X 297 mm)

Claims (1)

538323 j · ^ A8 B8 C8 D8 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to apply for a patent application park 1. An electron beam exposure device comprising: a set of beam sources for generating an electron beam; Shaping device; an offset device for changing the emission position of the electron beam on a group of samples; and a projection device for focusing the shaped electron beam onto the sample, wherein the shaping device Including: a dividing device for generating a plurality of sub-beams by dividing the electron beam; a rectangular shaping device for shaping each of the plurality of sub-beams into a desired rectangular shape; and a moving position for moving each of the plurality of sub-beams Child beam shifting device. 2. The electron beam exposure device of the first scope of the patent application, the rectangular shaping device shapes at least some of the plurality of sub-beams into a desired rectangular shape regardless of the shape, and the sub-beam shifting devices are mutually Unnecessarily move the emission positions of the plurality of sub-beams. 3. The electron beam exposure device according to item 2 of the patent application scope further includes a barrier device for controlling the electron beam so that the electron beam is emitted to the sample. 4. The electron beam exposure device according to item 2 of the patent application scope further includes a sub-beam blocker device for controlling the plurality of sub-beams independently of each other so that the sub-beams are emitted to the sample. 38 This paper size is applicable to China National Standards (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Order s'. 538323 Α8 Β8 C8 D8 々 、 Scope of patent application (please read first (Notes on the back of this page are to be completed on this page) 5. The electron beam exposure device of item 3 of the patent application scope further includes a method for controlling the plurality of sub-beams independently of each other so that the sub-beams are emitted to the sample. The top child beam blocker device. 6. The electron beam exposure device according to item 2 of the patent application scope, wherein the dividing device is a group of substrates having a plurality of first integer shaped apertures of a predetermined rectangular shape arranged at a predetermined gap, and the plurality of The light beam is a plurality of 偭 electron beams of a predetermined rectangular shape arranged in the predetermined gap, and wherein the moment 肜 shaping device includes: a first shaping deflecting device for irrelevantly shifting each of the plurality of sub-beams; A set of shaped aperture arrays corresponding to the rectangular shaped plurality of second shaped apertures arranged in the predetermined gap arrangement, wherein each of the plurality of sub-beams shifted by the first shaped offset device is emitted to the Waiting for a plurality of second integer apertures: a corresponding set of tops; and a second integer offset device for offsetting the plurality of sub-beams that are shaped by the plurality of second integer apertures Reply. 7. The electron beam exposure device of item 3 in the scope of patent application, wherein the dividing device has a plurality of first integer apertures printed by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and the Intellectual Property Bureau with a predetermined rectangular configuration arranged at a predetermined gap. A set of substrates, and the plurality of sub-beams are a plurality of electron beams of a predetermined rectangular shape arranged in the predetermined gap, and wherein the rectangular shaping device includes: An integer type 39 This paper size is applicable to China National Standards (CNS) A4 specifications (210 × 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 538323 A8 B8 C8 D8 6. Application for patent Fanyuan transfer device; A set of shaped aperture arrays of a plurality of second shaped apertures of a rectangular shape arranged at the predetermined gap, wherein each of the plurality of sub-beams shifted by the first shaped offset device is emitted to the A corresponding one of the plurality of second integer orifices; and a second integer offset device for passing the plurality of second integer orifices through Most of these type of sub-beam displacement reply. 8. The electron beam exposure device according to item 4 of the patent application scope, wherein the dividing device is a group of substrates having a plurality of first integer shaped apertures of a predetermined rectangular shape arranged at a predetermined gap, and the plurality of The light beam is a plurality of electron beams of a predetermined rectangular shape arranged in the predetermined gap, and wherein the moment-shaping shaping device includes: a first shaping shifting device for shifting each of the plurality of sub-beams independently; A set of shaped aperture arrays corresponding to the rectangular shaped plurality of second shaped apertures arranged in the predetermined gap arrangement, wherein each of the plurality of sub-beams shifted by the first shaped offset device is emitted to the And waiting for the top of the corresponding group of the plurality of second integer apertures; and a second integer offset device for offsetting and restoring the plurality of sub-beams through the plurality of second integer apertures . 9. The electron beam exposure device according to item 5 of the patent application, wherein the dividing device is a group of substrates having a plurality of first integer shaped apertures of a predetermined rectangular shape arranged at a predetermined gap, and a 40 ^ paper size is applicable China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 538323 A8 B8 C8 D8 VI. One of the pair of offset electrodes of the patent application Fanyuan electrostatic field is formed beside the offset electrode where the pair of offset electrodes are formed and is adjacent to each other The barrier electrode at another position of the aperture, and the direction of the electrostatic field formed by a pair of offset electrode groups on a set of integral offset substrates is the corresponding offset electrode group on the other offset substrate. The direction of the formed electrostatic field is 90 °, and two sets of integral offset substrates are arranged close to each other. 14. The electron beam exposure device according to item 6 of the patent application, wherein the substrate of the M device includes a plurality of integer shaped aperture groups each having the plurality of first integer shaped apertures, and the plurality of integral shaped aperture groups Any of the set of apertures is selectively movable into a channel of the electron beam. 15. For example, an electron beam exposure device according to item 7 of the scope of patent application, wherein the segmentation device substrate includes a plurality of integer shaped aperture groups each having the plurality of first integer shaped apertures, and the plurality of integer shaped aperture groups Any of the set of apertures is selectively movable into a channel of the electron beam. 16. The electron beam exposure device according to item 8 of the patent application, wherein the dividing device substrate includes a plurality of 簦 -shaped aperture groups each having the plurality of first integer apertures, and the plurality of integer types Any group of aperture groups is selectively movable into a channel of the electron beam. 17. · The electron beam exposure device of the 9th scope of the patent application, in which the substrate of the dividing device includes each of the plurality of first-shaped holes □ 43 This paper standard is applicable to China National Standards (CNS) Α4 specifications (210X297 mm) (Please read the notes on the back before filling this page) 538323 8 8 8 8 A B c D VI. The majority of integer orifice groups in the scope of patent application, and any one of the plurality of integer orifice groups is selectively movable into one of the channels of the electron beam. 18. The electron beam exposure device according to item 2 of the scope of patent application, wherein the sub-beam shifting device includes: two sets of shifting substrates, each including a plurality of apertures corresponding to the configurations of the plurality of sub-beams, A pair of offset electrodes formed on both sides of each aperture for forming an electrostatic field, and a barrier electrode formed on the side other than the position where the pair of offset electrodes are formed and adjacent to each of the apertures, and The direction of the electrostatic field formed by the pair of offset electrode groups on one integer offset substrate is 90 ° with the direction of the electrostatic field formed by the pair of offset electrode groups on the other integer offset substrate, and The two sets of integer offset substrates are arranged close to each other. 19. The electron beam exposure device according to item 4 of the patent application, wherein the sub-beam blocker device comprises: a set of blocker offset substrates, each including a plurality of apertures configured corresponding to the configuration of the plurality of sub-beams A pair of offset electrodes formed on both sides of each aperture for forming an electrostatic field, and a barrier electrode formed on the side other than the position where the pair of offset electrodes are formed and adjacent to each of the apertures; And a set of barrier plates for blocking the plurality of sub-beams that are shifted by using the offset electrode group pair. 2 0. If the electron beam exposure device in the fifth item of the scope of patent application, 44 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (21 OX297 mm) 538323 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 VI. Patent application Fan Yuan The sub-beam blocker device includes: a set of blocker offset substrates, which includes a plurality of apertures corresponding to the configuration of the plurality of sub-beams, and are formed on both sides of each aperture A pair of offset electrodes forming an electrostatic field, and a barrier electrode formed on a side other than the position where the pair of offset electrodes are formed and adjacent to each of the apertures; and a set of barrier plates for blocking The offset electrode group is used to offset the plurality of sub-beams. 21. The electron beam exposure device according to item 2 of the patent application range, wherein the offset device includes a primary offset device and a secondary offset device, and the offset range of the secondary offset device is smaller than the primary offset The offset range of the device, and a set of primary offset ranges corresponding to the offset range of the primary offset device is divided into a plurality of major points each corresponding to the offset range of the secondary offset devices An offset range, each of the minor offset ranges is divided into a plurality of sub-beam offset ranges each corresponding to an offset range of the sub-beam offset devices, with the primary offset device and the secondary offset The offset position of the device is kept fixed, and the offset position of the sub-beam offset device is changed so that the exposure is formed within the offset range of each of the sub-beams, and the offset position of the secondary offset device is changed by using Repeating the exposure within the offset range of each of the sub-beams, the exposure is formed within each of the secondary offset ranges, and repeating at each of the main 45 sheets by changing the offset position of the primary offset device ruler China's national standard applicable parameters (CNS) A4 size (210X297 mm) (Please read the back of the precautions to fill out this page)