JP2001015428A - Electron beam exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron beam exposure system which can obtain practically high throughput, without requiring lead time. SOLUTION: An electron beam exposure system is provided with a beam source 1 which generates an electron beam, a shaping means which shapes the electron beam, and deflecting means 12, 13, and 36 which change the projecting position of the electron beam on a sample 15. The exposure system is also provided with projecting means 10-8 and 10-9, which form the image of the shaped electron beam on the sample 15. The shaping means is provided with a splitting means, which generates a plurality of secondary beams by splitting the electron beam, rectangular shaping means 4, 5, and 6 which respectively shape the secondary beams into desired rectangular shapes, and a secondary beam deflecting means 9 which displaces the projecting positions of the secondary beams.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus, and more particularly to a technique for improving the throughput of an electron beam exposure apparatus.

[0002]

2. Description of the Related Art In recent years, semiconductor technology has been developed more and more, and the degree of integration and functions of semiconductor integrated circuits (ICs) have been improved, and their role is expected as a core technology of technological progress in a wide range of industries such as computer and communication machine control. ing. ICs have achieved four times higher integration in two to three years. For example, dynamic random access memory (DRAM: Dynam)
icRandom Access Memory), its storage capacity has increased to 1M, 4M, 16M, 256M, and 1G. Such high integration of ICs largely depends on the progress of fine processing technology in semiconductor manufacturing technology.

At present, the limit of the fine processing technology is defined by the pattern exposure technology (lithography technology). As a technique for exposing a pattern, an optical exposure (optical lithography) apparatus called a stepper is currently used. In an optical lithography apparatus, the minimum width of a pattern that can be formed due to a diffraction phenomenon is defined by the wavelength of an exposure light source. At present, a light source that emits ultraviolet light is used, but it is becoming more difficult to use light with a shorter wavelength, and in order to perform finer processing, various new exposure methods other than optical lithography have been studied. Have been. Among them, electron beam exposure is capable of much finer processing than optical lithography, and is being developed more than other methods in that practical equipment is actually provided. Have been. However, conventionally, it has been considered that this electron beam exposure has a lower throughput than a stepper and cannot be used for mass production of LSIs. Such an idea is based on, for example, a discussion of a single-stroke type electron beam exposure in which exposure is performed by continuously scanning a single electron beam, and physical / technical techniques for increasing throughput are used. It was not the result of elucidating the cause by focusing on the neck and seriously examining it. That is, the fact that electron beam exposure cannot be used for mass production of LSIs due to low throughput is merely determined in view of the productivity of conventional single beam electron beam exposure.

In recent years, various methods for improving the throughput of electron beam exposure have been proposed. In electron beam exposure using a single beam, a pattern portion is repeatedly scanned to perform painting. In order to finely draw the corners of the pattern, it is necessary to make the beam small, and accordingly, the time required for the filling process becomes long. Therefore, there is proposed a BAA system in which a plurality of electron beams that can be independently turned on and off can be controlled by an element called a blanking aperture array (BAA) having a plurality of arranged apertures and simultaneously scanned by the plurality of beams. Have been. BAA
The scheme, like a single beam, does not require the mask required in optical lithography. In practice, a plurality of electron beams are two-dimensionally arranged, reducing the change rate of the current amount of the entire electron beam at the edge of the pattern and the like,
Exposure is increasing. The efficiency of the BAA-type filling process is significantly improved for a pattern having a large width in the direction perpendicular to the scanning as compared with a single beam, but is significantly improved when there is one narrow pattern parallel to the scanning direction. do not do. In any case, in the BAA method, it is necessary to scan the entire exposure range, and when the pattern to be exposed is small, the time required for the exposure is rather long, and a sufficient throughput cannot be obtained at present. Further, the BAA is provided with a large number of openings, and they need to have a fineness of 70% to 50% or less of the pattern rule.

As another method for improving the throughput, a variable rectangle method has been proposed. In the variable rectangular method, two substrates having rectangular openings are arranged so that the openings correspond to each other, and a beam shaped into a rectangular shape passing through the opening of one substrate is deflected to form the other substrate. It irradiates the aperture and deflects the transmitted beam back to its original direction.
The shape of the beam that has passed through the opening of the other substrate is determined by the degree of overlap between the beam irradiated on the other substrate and the opening, that is, the amount of deflection, and is shaped into an arbitrary rectangular shape by controlling the amount of deflection. Can be. The exposure pattern is divided into rectangular shapes, the beam is shaped into each rectangular shape, and the beam is deflected to an irradiation position for exposure. Therefore, the variable rectangular method does not require a mask required for optical lithography. In the variable rectangle method, it is possible to expose a large rectangular shape in one shot, and when exposing a pattern that can be divided into a large rectangular shape, the exposure efficiency is greatly improved, but a small discrete rectangular shape is exposed. In such a case, a sufficient throughput cannot be obtained.

The single beam system, the BAA system, and the variable rectangular system described above do not require a mask required for photolithography, but a block exposure system using a mask for electron beam exposure has been proposed. In a semiconductor device, especially a memory, a portion where the same pattern is repeated occupies a large area. Therefore, if a block mask having an opening pattern corresponding to the repetition pattern is prepared, the repetition pattern can be exposed in one shot. In an actual semiconductor device, since there are various types of repetitive patterns, if a plurality of opening patterns corresponding to these patterns are provided and made selectable, almost all patterns of the semiconductor device can be exposed using a block mask pattern. For patterns not in the block mask,
Exposure is performed by using the above-described variable rectangle method or the like. In the block exposure method, even a complicated pattern can be exposed in one shot if it is in a block mask, so that the throughput is greatly improved. However, a semiconductor device having a random pattern such as a logic device (eg, a microprocessor)
In this case, the applicable range of the block exposure method is limited, and the throughput cannot be sufficiently improved.
In the block exposure method, a mask is used as in the case of optical lithography. However, since a mask must be separately manufactured, there is a problem that a lead time until actual exposure can be performed is long. Further, if dust adheres to the mask, a defect occurs in the exposure pattern, so that the mask must be strictly controlled. Therefore, there is a problem that the time required for managing the mask becomes the overhead time of the apparatus as in the case of optical lithography, and the actual throughput does not improve so much. In addition, there is a problem that the cost required for manufacturing and managing the mask increases the cost of the product.

The method for improving the throughput of electron beam exposure proposed so far has been described. To improve the throughput, it is necessary to increase the area that can be exposed by one shot and to shorten the time required for one shot. To shorten the time required for one shot, shorten the settling time until the beam can be exposed, such as shaping or deflecting the exposure pattern, or increase the current density per unit area of the beam, and Either shorten the exposure time. The settling time differs for each method, and needs to be considered for the entire method. When the current density of the beam is increased, the beam is blurred due to the Coulomb interaction and the resolution is reduced. The influence of the Coulomb interaction is also related to the size of the beam, and there is a problem that if the beam is enlarged while the current density of the beam is the same, the resolution is reduced due to the Coulomb interaction.

To solve such a problem, TRGrov
es and RAKendall, J. Vac.Sci.Technol.B 16 (6), Nov
/ Dec 1998, pp3168-3173, proposes an electron beam exposure apparatus provided with a plurality of variable rectangular beam irradiation systems (columns). In this apparatus, each column has an independent electron beam source, variable rectangular shaping means, and electrostatic deflection means having a small deflection range. Also, the applicant of the present application has disclosed in Japanese Patent Application No.
No. 795 proposes an electron beam exposure apparatus having a plurality of columns. In such a device having a plurality of independent columns, the above-mentioned problem of Coulomb interaction is reduced. However, the distance between the axes of the columns cannot be reduced too much, the number of columns that can be arranged by one device cannot be increased, and the throughput cannot be sufficiently improved. In addition, since the distance between the axes of the columns is large, the change in the distance between the axes of the columns due to a change in temperature or a change in the temperature distribution is relatively large compared to the minimum width of the pattern to be exposed, which may cause a shift in pattern joining. There is a problem that becomes. At present, the resolution of electron beam exposure is sufficiently better than that of optical lithography even if it is affected by Coulomb interaction, and it is more important to improve the throughput in an actual apparatus.

[0009]

As described above,
Various methods have been proposed for improving the throughput in electron beam exposure, but each has its own problems. At present, the block exposure method has the highest throughput, but the read time is required to prepare a block mask as described above, and its management is difficult, the overhead time is long, and the effective throughput does not improve much. is there. The BAA method and the variable rectangular method have no read time for preparing a mask, but have a lower throughput than the block exposure method. Also, BAA method has BAA
However, there is a problem that the overhead time for managing the data is long. Further, the method of providing a plurality of columns is difficult to sufficiently improve the throughput by itself, and there is a problem that the pattern accuracy in a pattern joining portion is reduced.

SUMMARY OF THE INVENTION It is an object of the present invention to realize an electron beam exposure apparatus which does not require a read time and can obtain a high throughput effectively.

[0011]

In order to achieve the above object, an electron beam exposure apparatus according to the present invention divides an electron beam from one electron beam source into a plurality of sub-beams,
Each sub-beam is shaped into a variable rectangle, and shaping means is provided to allow each of the sub-beams to be deflected, albeit in a smaller range, and the same converging means and deflecting means are used to connect the entire plurality of sub-beams. Deflection of the image and large range.

That is, the electron beam exposure apparatus of the present invention comprises a beam source for generating an electron beam, a shaping means for shaping the electron beam, a deflecting means for changing the irradiation position of the electron beam on the sample, and In an electron beam exposure apparatus comprising: a projection unit that forms an electron beam on a sample; a shaping unit that divides the electron beam to generate a plurality of sub-beams; It is characterized by comprising a rectangular shaping means for shaping into a shape, and a child beam deflecting means for respectively displacing the irradiation positions of a plurality of child beams.

An electron beam exposure apparatus according to the present invention divides an electron beam generated by one electron beam source into a plurality of sub-beams, shapes each sub-beam by a variable rectangular method, and further shapes the beam. The deflected sub-beams are respectively deflected. If the distance between the axes of the sub-beams is small, the influence of the deviation between the sub-beams due to a temperature change, etc. is small, and there is no problem of the deviation in splicing. Can be deflected to a large range. Therefore, the beam can be divided into a large number of sub-beams, and the throughput is greatly improved. In addition, a plurality of electron beam sources are provided,
The above configuration for each electron beam source, that is, the electron beam generated by each electron beam source is divided into a plurality of sub-beams, and each sub-beam is shaped by a variable rectangular method. A plurality of systems for deflecting each beam may be provided. It is desirable to shape each sub-beam independently and deflect it independently. However, although it is divided from one electron beam source, when there is a slight current distribution, the same part on the sample is It is conceivable that redundancy for irradiating a plurality of sub-beams in a divided manner is required.
In that case, the same beam control signal may be given to the child beams in each set for exposing the same pattern after adding a desired delay time. In this case, it is necessary to reduce the dose per sub-beam by the number of divisions.

[0014] Even if blanker means are provided so as to simultaneously or simultaneously control whether or not all the sub-beams are irradiated on the sample, the sub-controller controls whether or not the sub-beams are independently irradiated on the sample. A beam blanker means may be provided, or both may be provided and used in combination. If sub beam blanker means are provided, each sub beam can be irradiated independently. When used together, for example, a common blanker is used when changing the deflection amount of a deflector having a large deflection range such as a main deflector and a sub-deflector constituting the deflector, and a child beam blanker is used at other times. Use means.

The splitting means for splitting into adjacent child beams includes:
It is realized by a substrate having a plurality of first shaping openings having a predetermined rectangular shape arranged at a predetermined pitch. Thereby, a plurality of sub-beams having a predetermined rectangular shape arranged at a predetermined pitch are generated. The rectangular shaping means includes a first shaping / deflecting means for deflecting the plurality of sub-beams, a shaping aperture array having a plurality of rectangular shaped shaping apertures arranged at a predetermined pitch, and a plurality of second shaping apertures. The second to turn back the directions of the plurality of sub-beams that have passed through the shaping aperture
A first shaping / deflecting unit that irradiates a plurality of sub-beams to a corresponding plurality of second shaping apertures of the shaping aperture array, whereby the sub-beams illuminated to the second shaping aperture and the apertures of the apertures are formed. It is shaped into the overlapping part. The first and second shaping / deflecting means each include a plurality of openings arranged corresponding to the arrangement of the plurality of sub-beams, a set of deflection electrodes for forming an electrostatic field provided on both sides of each opening, And two shielded deflection substrates each having a shield electrode provided at a portion other than the portion where the set of deflection electrodes is provided around the opening, and an electric field formed by the set of deflection electrodes of the two shaped deflection substrates Are different by 90 °, and two shaping / deflecting substrates are arranged close to each other.

The sub-beam deflecting means includes a plurality of apertures arranged corresponding to the arrangement of the plurality of sub-beams, a set of deflection electrodes for forming an electrostatic field provided on both sides of each aperture, and a plurality of apertures. Two deflection substrates each having a shield electrode provided in a portion other than where the set of surrounding deflection electrodes are provided;
The directions of the electric fields formed by the set of deflection electrodes of the two deflection substrates are different by 90 °, and the two deflection substrates are arranged close to each other.

In the present invention, it is necessary that a plurality of sub-beams arranged close to each other can be accurately deflected after being independently shaped. For this purpose, the rectangular shaping means and the sub-beam deflecting means are combined as described above. The fact that the present invention can be realized by being integrated on one substrate can be said to be a factor that can effectively improve the throughput in the present invention. The sub-beam blanker means includes a plurality of apertures arranged corresponding to the arrangement of the plurality of sub-beams, a set of deflection electrodes for forming an electrostatic field provided on both sides of each aperture, and a deflection around the plurality of apertures. A blanker deflection substrate having a shield electrode provided in a portion other than the portion provided with the electrode set, and a shield plate for shielding the plurality of sub-beams deflected by the deflection electrode set are provided.

It is desirable that the substrate of the dividing means has a plurality of sets of a plurality of first shaping apertures, and any one of the plurality of sets can be selectively moved into the path of the electron beam. Since only a plurality of first shaping openings are provided on the substrate of the dividing means and no wiring or the like is required, a plurality of sets of a plurality of first shaping openings can be provided. Since the substrate of the dividing means is damaged by the irradiation of the electron beam, maintenance is improved by providing a plurality of sets and selectively using them.

In general, the larger the deflection range of the deflector, the longer the settling time. Therefore, in the conventional apparatus, the main deflector, the sub deflector, and, if necessary, the sub / sub deflectors are combined so that substantially high-speed deflection can be performed in a wide range. Similarly, in the apparatus of the present invention, it is desirable to combine deflectors having different deflection ranges and settling times. However, in the present invention, each of the sub-beams can be deflected, and the main deflector, the sub-deflector, and the sub / sub-deflectors, etc., deflect all the sub-beams in common by the same amount. The deflection method differs depending on the range.

First, there is a case where the deflection range of a child beam is adjacent to or overlaps the deflection range of an adjacent child beam. In this case, the deflection range of all the arranged sub-beams is set as the deflection range by the lowermost deflection means.
Deflection is performed in combination with a high-order deflecting unit having a large deflection range as in the conventional case. After the pattern of the deflection range by each sub-beam is completely completed, the same processing is repeated while changing the deflection position of the deflection means to the adjacent deflection position.

When the deflection range of the child beam is not adjacent to the deflection range of the adjacent child beam, the deflection position of another deflector (lowest deflector) constituting the deflecting means is set as follows.
The entire range in which the child beams are arranged is exposed by changing the width of the deflection range of the child beam. The rest is the same as before. For example, when the center of the deflection range of the child beam is four times as wide as the width of the deflection range of the child beam, by shifting the center position four times, it is possible to expose the entire deflection range of the adjacent child beam. . If the centers of the deflection ranges of the sub-beams in the X-axis direction and the Y-axis direction are each four times the width of the deflection range of the sub-beam, exposure may be performed by shifting the center position a total of 16 times. . The deflecting means usually combines a main deflector and a sub deflector, but the deflection for exposing between the deflection ranges of the adjacent sub-beams may be performed by the sub deflector, but the deflection range is It is desirable to provide a sub-sub-deflector which is smaller than the sub-deflector but has a shorter settling time for deflection, and performs this deflection.

It should be noted that setting the deflection range of the child beam to be smaller than its maximum deflection range, and exposing a pattern straddling the boundary of the divided deflection range by one shot, in order to prevent displacement due to joining. preferable. If the deflection ranges of the child beam overlap, the exposure of the pattern in the deflection range by a certain child beam is completed. If the exposure of the adjacent child beam is not completed yet, the adjacent child beam is exposed. By exposing the pattern within the beam exposure range with the sub-beam that has been exposed, the throughput is improved.

[0023]

FIG. 1 is a view showing a schematic configuration of an electron beam exposure apparatus according to an embodiment of the present invention. FIG. 2 is a view for explaining a path of an electron beam in an electron optical system. FIG. 4 is a diagram for explaining a path of one child beam at the center. FIG.
, Reference numeral 1 is an electron gun, 3 is a first shaping aperture array, 4 is a first shaping deflector array, 5 is a second shaping deflector array, and 6 is a second shaping aperture array. And 7 is a child beam blanker,
8 is an aperture, 9 is a sub-beam deflector array, and 1
Numerals 0-1 to 10-9 are magnetic field lenses, 11 is a common blanker, 12 is a main deflector, 13 is a sub deflector, 14 is an aberration / Coulomb defocus corrector, and 15 is
Denotes a wafer, 16 denotes a stage mechanism for attracting and transporting the wafer 15, 17 denotes a control unit of the stage mechanism, and 18 denotes a reflected electron detector used for detecting a focus state and a position of a reference mark. 19 is a detection signal processing circuit, 20 is a main deflector control unit, and 21 is a detection signal processing circuit.
Denotes a sub-deflector control unit, 22 denotes an aberration / Coulomb blur correction unit control unit, 23 denotes a child beam deflector array control unit, 24 denotes a common blanker control unit, and 25 denotes a child beam blanker control unit. 26, a second shaping / deflecting device array control unit; 27, a first shaping / deflecting device array control unit; 28, an electron optical system control unit; 29, a control computer; 31 is a large-scale storage device.
Reference numeral 32 denotes a control computer and an interface unit of each unit of the apparatus; 32, a network adapter with a host computer; 33, a computer bus;
Is a control bus, 35 is a Faraday cup,
36 is a sub / sub deflector. In the figure, the electron gun 1
A solid line and a broken line from to the wafer 15 indicate the outermost path and the optical axis of the electron beam emitted from both ends of the electron gun.

The electron beam exposure apparatus according to the present embodiment
The basic configuration is the same as that of the conventional device, and details not shown are the same as those of the conventional device. For example, the path of the electron beam, the wafer 15, the stage mechanism 16, and various deflectors and correctors are all housed in a cylindrical vacuum chamber. Hereinafter, only the features of the present invention will be described.

The path of an electron beam in the electron optical system according to the embodiment will be described with reference to FIGS. Reference number 2
-1 to 2-8 represent the axes of the magnetic field corresponding to the magnetic lenses 10-1 to 10-8. The electron beam emitted from the electron gun 1 is once converged by the magnetic field 2-1 and then applied to the first shaping aperture array 3. The first shaping aperture array 3 has a large number of rectangular openings arranged as described later, and is divided into a large number of sub-beams that have passed through the openings. As shown in FIG. 3, the electron beam passing through the opening 42 at the center also becomes a sub-beam. The sub-beam group has a magnetic field 2-
2 and enters the first shaping deflector array 4 during the convergence. The first shaping deflector array 4 is arranged at a position where the magnification of the electron beam is the same as that of the first shaping aperture array 3. This is the same for the other second shaping deflector array 5, the second shaping aperture array 6, the sub beam blanker 7, and the sub beam deflector array 9. Openings are arranged in the first shaping deflector array 4 in the same manner as the first shaping aperture array 3, and deflecting electrodes are formed on both sides of the openings, so that X is perpendicular to the optical axis (Z axis). It can be deflected by an arbitrary amount in the axial direction and the Y-axis direction. FIG. 3A shows a case where the first shaped deflector 4-1 corresponding to the child beam does not deflect, and FIG. 3B shows a case where it is deflected by the first shaped deflector 4-1. . After being converged once, the sub-beams pass through the magnetic field 2-3 and enter the second shaping deflector array 5. Second shaping deflector array 5
In each of the deflectors corresponding to the respective sub-beams, the deflection is performed in a direction opposite to that of the corresponding deflector of the first shaping deflector array 4, and the path returns to the original. A second shaping aperture array 6 is provided immediately after the second shaping deflector array 5, and overlaps with an opening corresponding to the amount of deflection of each deflector of the first shaping deflector array 4 (overlap). The condition is different. As shown in FIG. 3A, when the beam is not deflected by the first shaping deflector 4-1, half of the child beam passes through the aperture. When the beam is deflected by the first shaping deflector 4-1 as shown in FIG. 3 (2), most of the sub beam passes through the aperture.
Reference numeral 5-2 indicates the deflection of the second shaping deflector array 5-1. It can be seen that the deflection is in the opposite direction to the deflection by the first shaping deflector 4-1. If the direction of deflection is reversed from that in FIG. 3B, the width of the passing beam becomes smaller. Such deflection is performed in the X direction and the Y direction, and is shaped into various rectangular shapes.

Further, the sub-beam group is converged by the magnetic field 2-4 and enters the sub-beam blanker 7. As shown in FIG. 3A, when the beam is deflected by the corresponding deflector of the sub beam blanker 7, the sub beam is blocked by the stop 8. However, if it is not deflected by the deflector of the child beam blanker 7,
The light passes through the stop 8 as shown in (2). That is, on / off control of whether or not each sub-beam is independently irradiated on the wafer 15 can be performed. After passing through the magnetic field 2-5, the sub beam group enters the sub beam deflector array 9. As shown in FIG. 3, the irradiation position on the wafer 15 changes depending on whether or not the deflection is performed by the corresponding deflector of the sub-beam deflector array 9. The sub-beam group further includes magnetic fields 2-6 and 2-7.
And 2-8 converge on the wafer 15.

FIG. 4 is a diagram showing a configuration example of the first and second shaping aperture arrays 3 and 6. As shown in (1) of FIG. 4, the shaping aperture array is formed of a thin plate such as a silicon wafer, and the aperture section 4 that forms an opening row.
1 is further reduced in thickness by etching or the like, and a rectangular opening 42 is formed in the aperture portion 41 by etching. The opening 42 has, for example, one side in this embodiment.
A total of 400 pieces of 20 × 20 are formed in a 5 μm square at a pitch of 60 μm. Since the image of the shaping aperture array portion is irradiated onto the wafer 15 in a reduced size of 1/60, if the shape is unchanged, a child beam of 0.25 μm square is formed on the wafer 15 by 1.0 μm. They will be arranged at the pitch.

The aperture section 41 has a size of 5 × 5 as shown in the figure.
Are provided in a total of 25 places. A plurality of aperture portions 41 can be provided on the substrate of the shaping aperture array since only the openings 42 are provided and no wiring or the like is required. Since the electron beam is incident on the entire surface of the substrate of the shaping aperture array, especially the first shaping aperture array 3, the opening may be deformed due to heat generation when used for a long time, and work such as replacement is necessary depending on use. It is.
If a plurality of apertures 41 are provided, and one of the apertures 41 can be selectively arranged in the path of the electron beam by a moving mechanism (not shown), the replacement cycle can be lengthened and maintenance can be facilitated. .

FIG. 4B is a diagram showing a cross-sectional structure of the shaping aperture array. Here, a case where the aperture portion 41 is provided at one position is shown. Reference numeral 43 denotes a silicon (Si) substrate, 44 denotes an insulating boron diffusion layer, 46 denotes silicon, and 47 denotes a protective metal film. The opening 42 is formed after the thickness of the aperture portion 41 is further reduced by etching.

FIG. 5 is a view showing the first shaping deflector array 4, the second shaping deflector array 5, the sub beam blanker 7, and the deflector array substrate 50 constituting the sub beam deflector array 9. The substrate 50 is also formed of a thin plate such as a silicon wafer, and the portion of the deflector array 51 is processed to be thin similarly to the aperture 41 of the shaped aperture array. Reference numeral 52 denotes a signal electrode pad for supplying a signal to be applied to a deflection electrode formed in the deflector array unit 51, and reference numeral 53 denotes a GND electrode pad.

FIG. 6 is a top view of the deflector array section 51. As shown, square openings 56 are arranged corresponding to the arrangement of the openings 42 of the shaping aperture array. A positive electrode 53 and a negative electrode 54 are disposed on two opposite sides of each opening 56, and a shield ground electrode 55 is disposed on the other two sides. Therefore, in the present embodiment, the pitch is 60 μm,
A total of 400 square openings 56 of × 20 are formed. One side of the opening 56 is the opening 42 of the shaping aperture array.
It is about 25 μm, which is slightly larger.

FIG. 7 is a view showing the shapes of the openings and electrodes in one opening unit 57 and the electric field formed by the electrodes. As shown in the figure, the positive electrode 53 and the negative electrode 54 are symmetrical, and the central part is a parallel electrode, but both ends have a slightly curved shape. The shield ground electrode 55 is integrated with the adjacent opening unit. With such an electrode shape, it can be seen that equipotential lines at the center are parallel and at equal intervals, and a uniform electric field is formed. If the deflection amount of the deflector array substrate 50 is not accurate, the shaped shape will not be the desired shape or the exposure position will be shifted, so that the deflection amount of the deflector array substrate 50 is very accurate. It is required that there be. Therefore, the opening 56 is a square from which a uniform electric field can be obtained. The aperture 42 of the shaping aperture array is shaped as shown by reference numeral 58 and the aperture 4
In the case of the secondary beam having the shape of 2, the beam passes through the opening 56 with a margin and is accurately deflected by a uniform electric field.

Returning to FIG. 5, the central deflector array 51
Is provided between the signal electrode pad 52 and the GND electrode pad 53 in the area between the signal electrode pad 52 and the GND electrode pad 53.
Numerous wirings connecting the electrode pad 53 and the positive electrode 53 and the negative electrode 54 of the deflector array unit 51 are formed in multiple layers.
Since the child beam blanker 7 only deflects in one direction,
Although only one deflection array substrate 50 shown in FIGS. 5 to 7 may be used, the first shaping deflector array 4, the second shaping deflector array 5, and the sub-beam deflector array 9 are composed of an electron optical system. Since it is necessary to deflect in two directions perpendicular to the axis, two deflection array substrates 50 are used.

FIG. 8 is a diagram showing the configuration of the first shaping deflector array 4, the second shaping deflector array 5, and the child beam deflector array 9. As shown in FIG. 8, two deflection array substrates 50 are arranged close to each other. In the deflector array section 51 of one substrate 50, an opening 56 is formed in the substrate, and a positive electrode 53, a negative electrode 54, and a shield ground electrode 55 are formed on one surface of the substrate. The signal electrode pad 52 and the GND electrode pad are similarly formed on one surface of the substrate. In the deflector array section 51 'of the other substrate 50',
An opening 56 'is formed in the substrate, and a positive electrode 53', a negative electrode 54 'and a shielding ground electrode 5 are formed on the other surface of the substrate.
5 'is formed, and the signal electrode pad 52' and the GND electrode pad are similarly formed on one surface of the substrate. As shown, the two substrates 50, 50 'are arranged with the openings 56, 56' aligned so that the sides on which the electrodes are not formed face each other. Since no electrodes or the like are formed on the facing surfaces, the two substrates can be arranged very close to each other.

The directions of the positive electrode 53 and the negative electrode 54 differ from those of the positive electrode 53 'and the negative electrode 54' by 90 °. Therefore, by applying a voltage between the positive electrode 53 and the negative electrode 54 and between the positive electrode 53 'and the negative electrode 54', an electric field is formed in the directions indicated by reference numerals 61 and 61 ', Sub-beams passing through the corresponding apertures 56, 56 'can be deflected in 90 ° different directions. That is, a deflector capable of independently deflecting the child beam in two directions, the X-axis direction and the Y-axis direction, perpendicular to the optical axis is realized.

In this embodiment, the number and pitch of the arrangement of the openings 56 and 56 'in the X and Y directions are the same. Therefore, each deflector is manufactured by manufacturing the two deflection array substrates 50 in the same manufacturing process, turning the substrate upside down, and then changing the direction by 90 °. As described above, in the present embodiment, the first shaping deflector array 4, the second shaping deflector array 5, the sub-beam deflector array 9, and the sub-beam blanker 7 also have the electron beam expansion rate of the first shaping aperture. It is arranged at the same position as the array 3. Therefore, the arrangement of the openings of the substrates constituting these deflectors can be made the same. Therefore, the first shaping deflector array 4, the second shaping deflector array 5, and the sub-beam deflector array 9 are configured by using two deflection array substrates 50 manufactured in the same manufacturing process. Also uses the same substrate. Thereby, the influence of errors in the manufacturing process can be reduced.

Returning to FIG. 1, a first shaping deflector array controller 27, a second shaping deflector array controller 26, a sub-beam deflector array controller 23, and a sub-beam blanker controller 25.
Are the first shaping deflector array 4, the second shaping deflector array 5, the sub beam blanker 7, and the sub beam deflector array 9.
Drive signals to be applied to the respective signal electrodes. In the apparatus of the present embodiment, the main deflector 12 which is an electromagnetic deflector, the sub deflector 13 which is an electrostatic deflector, and the sub / sub deflector 36 which is an electromagnetic deflector constitute a common deflection unit. . The size of the deflection range is determined by the main deflector 12, the sub deflector 13, the sub / sub deflector 36.
The deflection speed (short deflection settling time) is
The sub / sub deflector 36, the sub deflector 13, and the main deflector 12 are in that order. Although the sub / sub deflector 36 is provided outside the sub deflector 13 here, it may be provided above the sub deflector 13. In this case, the sub / sub deflector 36 is electrostatically deflected. It is also possible to make a container.

The configuration of the electron beam exposure apparatus of the present embodiment has been described above, but the other parts are basically the same as the conventional one. Next, division of the deflection range in the present embodiment will be described with reference to FIGS. As described above, in the conventional electron beam exposure apparatus, a wide range of deflection can be deflected substantially at high speed by combining deflectors having different characteristics. Actually, the throughput is further improved by continuously performing exposure while moving the stage and correcting the amount of movement by a sub-deflector. The same method is applied to the present embodiment. However, in the present embodiment, each sub-beam can be deflected independently, and the main deflector, sub-deflector, sub-sub-deflector and the like deflect all sub-beams in common by the same amount. The deflection method is different depending on the deflection range of the laser beam. Further, the deflection method differs depending on whether the deflection range of the child beam is adjacent to or overlaps with the deflection range of the adjacent child beam, or when it is apart from the deflection range of the child beam. In this embodiment, as shown in FIG. 10, a description will be given assuming that the deflection range 79 by the child beam is not adjacent.

FIG. 9A shows an arrangement of chips (dies) 70 formed on the wafer 15. Since one chip 70 is larger than the deflection range of the electron beam exposure apparatus, it is necessary to move the stage to expose one chip 70. In this case, the stage is moved and stopped, then the pattern in the deflection range is exposed, and when the stage is completed, the stage is moved again and stopped, and a method called step & repeat in which the adjacent range is exposed, and the stage is moved. There is a continuous movement method of exposing a pattern of a portion coming within the deflection range while correcting the movement amount of the stage by a sub deflector or the like. Although any method can be applied to the present invention, a step & repeat method will be described here as an example for convenience of explanation.

As shown in FIG. 9A, one of the stages is moved within the width of the first deflection range (appropriately set within the maximum deflection range) corresponding to the main deflection range of the electron beam exposure apparatus. Only the amount is changed (the X direction is fixed, and only the Y direction is changed stepwise). The region of the above width exposed at this time is
Called 1. As shown in (2) of FIG. 9, when exposure of one frame 71 is completed, the next frame is exposed by moving the stage in the opposite direction. Reference numeral 72 indicates the moving direction of the stage. Here, the first of the electron beam exposure apparatus
The deflection range 73 is 1/3 of the length of one side of the square chip.
That is, one chip can be exposed by nine steps and repeat operations, and one chip is exposed in three times in one frame.

As shown in FIG. 9C, the first deflection range 73 is divided into 36 second deflection ranges corresponding to the sub deflection range. After fixing the deflection position of the main deflector 12 to the center of each second deflection range 75, the sub deflector 1
3. Exposure of the pattern in each second deflection range 75 is performed by changing the amount of deflection of the sub / sub deflector 36 and the sub beam deflector array 9. When the exposure of the pattern in one second deflection range 75 is completed, the deflection position of the main deflector 12 is changed to the center of the next second deflection range 75 and fixed, and the same processing is repeated. When this processing is completed for all the second deflection ranges 75 in the first deflection range 73, the first deflection range 7
3 is completed, and the first deflection range 7 next to FIG.
Exposure 3 is performed in the same manner. Reference numeral 74 indicates the locus of the change in the main deflection position.

As shown in FIG. 9 (4), the second deflection range 75 is divided into a third deflection range 77 (here, 16).
Pieces). After fixing the deflection position of the sub deflector 13 to the center of each third deflection range 77, the deflection amount of the sub / sub deflector 36 and the child beam deflector array 9 is changed to change each third deflection range 77.
Is exposed. When exposure of the pattern in one third deflection range 77 is completed, the deflection position of the sub deflector 13 is changed to the center of the next third deflection range 77 and fixed.
Repeat the same process. When this processing is completed for all the third deflection ranges 77 in the second deflection range 75, the exposure of the second deflection range 75 is completed, and the exposure of the second deflection range 75 next to FIG. Do the same. Reference number 7
Reference numeral 6 denotes a locus of change in the sub deflection position.

FIG. 10 is a view showing the state of exposure within the third deflection range 77. Reference numeral 79 indicates each child beam deflection range by the child beam deflector array 9. As described above, there are a total of 400 sub-beams of 20 × 20, and the deflection range of each sub-beam is a square of 0.25 μm square on the wafer and separated by 1.0 μm. The third deflection range 77 is 4
It is divided into 00 fourth deflection ranges 82, and the fourth deflection range 82 is further divided into 16 fifth deflection ranges 83 corresponding to the respective child beam deflection ranges. After changing the amount of deflection of the sub / sub deflectors 36 so as to be at the center of the fifth deflection range 83 as shown in (2), the child beam deflector array 9 uses the 400 fifth deflection ranges 83. Expose inside. When the exposure is completed, the sub / sub deflector 36 follows the locus 78 of (2).
The same processing is performed after changing the amount of deflection to the center of the adjacent fifth deflection range 83. In this way,
When the exposure of the 16 fifth deflection ranges 83 is completed for each sub beam, the exposure of all the fourth deflection ranges 82, that is, the exposure of the third deflection range 77 is completed.

In this example, the sub / sub deflector 3
The deflection range 6 may be at least 4 × 4 of the fifth deflection range 83, and may be 1/80 of the deflection range of the sub deflector 13 (corresponding to the second deflection range 75). In each child beam deflection range 79, the first shaping deflector array 4 and the second shaping deflector array 5
As a result, each of the sub-beams is independently shaped into a rectangular shape 81, and after being deflected by the sub-beam deflector array 9 according to the exposure position as indicated by reference numeral 80, is exposed.
When a rectangular shape is exposed a plurality of times within each sub-beam deflection range 79, the same processing is repeated for the number of times. For example,
In the example on the left, the rectangular shape is exposed once, in the center, the rectangular shape is exposed twice, and on the right, the rectangular shape is exposed four times. As shown in the figure, the lower left corner of the rectangular shape is the reference position, the position of the lower left corner of the rectangular shape is kept constant by shaping, and the lower left corner of the rectangular shape is at the desired position. It is deflected so that

As described above, in the present embodiment, the stage is moved so that the center of the first deflection range 73 becomes the optical axis, and the deflection position of the main deflector 12 becomes the center of the second deflection range 75. And the deflection position of the sub deflector 13 is set to be at the center of the third deflection range 77.
6. The deflection position of each child beam is set to the third deflection range 7
7 is set to be one of the fifth deflection ranges 83 obtained by further dividing the fourth deflection range 82, and the rectangle shaped by the first shaping deflector array 4 and the second shaping deflector array 5 is formed. The shaped sub-beam is deflected by the sub-beam deflector array 9 and exposed. When the exposure of each sub beam deflection range is completed, the deflection position of the sub / sub deflector 36 is changed to the next fifth deflection range 8.
3 and the same process is repeated. This process is repeated 16 times, and the exposure of the third deflection range 77 is completed. next,
After changing the deflection position of the sub deflector 13 to the center of the next third deflection range 77, the same processing is repeated. This process is 1
The exposure of the second deflection range 75 is completed six times. Further, the deflection position of the main deflector 12 is changed to the next second deflection range 75.
And then repeat the same process. This process is repeated 36 times, and the exposure of the first deflection range 73 ends. Further, the stage is moved in the Y direction, and
The exposure of the deflection range 73 is performed, and the process is repeated until the exposure of one frame is completed. Further, the stage is moved in the X direction, and the same processing is performed for the next frame. Thus, all the patterns on the wafer 15 are exposed.

Next, the exposure processing in the electron beam exposure apparatus of this embodiment will be described. First, each unit is adjusted. In this adjustment, each unit is set to an optimum state, and data on the difference between each child beam of the unit related to the child beam is collected. The electron gun 1 and the magnetic lenses 10-1 to 10-9 are adjusted by the electron optical system control unit 28. Further, the main deflector 12, the sub deflector 13, and the sub / sub deflector 36 are adjusted, and data relating to the amount of deflection thereof is collected. This adjustment is the same as the conventional one. First shaping aperture array 3 and second shaping aperture array 6
As described above, a plurality of aperture units 41 are provided, and one of them is selected. The first shaping aperture array 3, the second shaping aperture array 6, the first shaping deflector array 4, the second shaping deflector array 5, the child beam blanker 7, the child beam deflector array 9, and the stop 8 are used for positioning. The overlay is adjusted using a jig or the like. At this time, data relating to the characteristics of individual deflectors for deflecting the child beam is also collected and stored. Further, adjustment and data of the aberration / Coulomb blur correction device 14 and the like are collected. The backscattered electron detector 18 and the Faraday cup 36 are used for the above adjustment and data collection.

Based on the data collected as described above, the main deflector controller 20, the sub deflector controller 21,
Coulomb blur compensator control unit 22, child beam deflector array control unit 23, common blanker control unit 24, child beam blanker control unit 25, second shaping deflector array control unit 26, first
Correction data is set in the shaping deflector array controller 27, the electron optical system controller 28, and the like.

The control computer 29 creates exposure information in a drawing frame from “LSI drawing data” and “layout / exposure condition information on a wafer” stored in the large-scale storage device 30. At this time, FIGS. 9 and 10
As described above, exposure information is generated according to the divided exposure range. When performing exposure, the common blanker 11 is used.
After the whole beam is cut off, the sub-beam blanker is also cut off, and the wafer 15 is fixed to the stage 16 as shown in FIG.
And moving the stage 16 as described with reference to FIG.
The deflection positions of the main deflector 12 and the sub deflector 13 are set. In this state, the cutoff by the common blanker 11 stops. Next, the deflection position of the sub / sub deflector 36 is set, and exposure is started.

The shape and deflection position of each sub-beam can be independently controlled, and patterns in respective ranges are sequentially exposed. However, beam blur occurs due to Coulomb interaction as described above. This blur is an aberration / Coulomb blur corrector 14
However, it is not preferable that a large amount of current or a large change occurs simultaneously in the whole child beam. The writing range of the child beam may have a large number of patterns, a small number of patterns, or no patterns. Also,
There may be large patterns or only small patterns. Basically, the number of shots is determined according to the number of patterns in the range, and there are a range with a large number of shots and a range with a small number of shots. Therefore, in the range where the number of shots is small, the order of the shots is adjusted so that the maximum current amount per shot is as small as possible and the change in the current amount between shots is reduced.

For example, in the range (3, 1) on the left side of (1) in FIG. 10, a large pattern of one shot is used, in the central range (5, 1), a slightly small pattern of two shots, and on the right side. (M, 1) is a small pattern of four shots. In this example, in the first shot, only one pattern of (m, 1) is used. In the second shot, one pattern of (5, 1) and one pattern of (m, 1) are used. In the shot, the remaining one pattern of (5,1) and one pattern of (m, 1) are exposed, and in the fourth shot, one pattern of (3,1) and one remaining pattern of (m, 1) are exposed. Exposure is performed in a dispersed manner. Actually, such dispersion is performed for an exposure range using 400 child beams. As a result, the maximum current amount per shot is reduced, and the change in the current amount between shots is also reduced.

By exposing as described above, 4
The exposure of the patterns of the 00 fifth deflection ranges 83 ends. Hereinafter, the same processing is repeated while changing the deflection positions of the sub / sub deflector 36, the sub deflector 13 and the main deflector 12, and the position of the stage to expose all the patterns on the wafer 15. As described above, the electron beam exposure apparatus according to the embodiment of the present invention has been described, but various modifications may be considered.

For example, although the positive electrode 53 and the negative electrode 54 of the deflector array substrate 50 of the embodiment have the shapes as shown in FIG. 7, they may be parallel electrodes as shown in FIG. is there. However, in this modification, since the range in which a uniform electric field is formed is relatively small, if the same size child beam is used, the size of the aperture unit 57,
That is, it is necessary to increase the arrangement pitch of the sub-beams. In the case of FIG. 7, the aperture pitch is 1 / the beam size.
4, the use efficiency of the child beam is 1/16, but in FIG. 11, the pitch of the aperture is 1/6 of the beam size,
The usage efficiency of the daughter beam is 1/36. As described above, the use efficiency of the child beam is reduced to about half, but it is sufficiently practical.

Further, in the embodiment, the sub / sub deflector 36 is provided in addition to the main deflector 12 and the sub deflector 13 to move the deflection range 79 by the discrete child beam. The deflection may be performed by the sub deflector 13 without providing the deflecting device. Further, in the embodiment, the deflection ranges 79 by the child beam are separated from each other as shown in FIG. 10, but by increasing the amount of deflection of each set of deflectors of the child beam deflector array 9, the deflection by the child beam is increased. The ranges 79 may be adjacent to each other. In this case, it is not necessary to change the position by the sub / sub deflectors as shown in FIG. 10B, and the third deflection range 77 is exposed by changing only the deflection position of each sub beam.

The deflection range 79 by the child beam may be set smaller than the maximum deflection range, and a pattern straddling the boundary of the divided deflection ranges may be exposed in one shot. Thereby, the displacement due to the joining can be reduced. If the deflection ranges of the child beam overlap, the exposure of the pattern in the deflection range by a certain child beam is completed. If the exposure of the adjacent child beam is not completed yet, the adjacent child beam is exposed. A pattern within the beam exposure range may be exposed by a sub-beam that has been exposed. By doing
Throughput is improved.

Further, when dispersing the shots by the sub-beams, the upper limit of the total current amount of all the sub-beams is set in advance. May be set larger than the maximum number of patterns. In this case, the number of shots increases, so that the time required for exposure becomes longer. However, since this does not occur frequently, the decrease in the effective throughput is small.

[0056]

As described above, according to the present invention,
Since exposure using a very large number of variable rectangular systems is performed in parallel, the throughput is greatly improved, and the same or higher throughput as that of the block exposure system can be obtained. Moreover, unlike the block exposure method, there is no need for a read time for preparing a block mask, and since there is no management, there is little overhead time, and the actual throughput is further increased.

As a result, an electron beam exposure apparatus which can be used in the mass production process of LSI can be realized, and mass production of highly integrated LSI can be achieved at low cost.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an overall configuration of an electron beam exposure apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram illustrating a path of an electron beam in an electron optical system of an electron beam exposure apparatus according to an embodiment.

FIG. 3 is a diagram showing a path of one child beam in the electron optical system of the electron beam exposure apparatus according to the embodiment.

FIG. 4 is a diagram illustrating a configuration example of first and second shaping aperture arrays of the electron beam exposure apparatus according to the embodiment.

FIG. 5 is a view showing a deflector array substrate of the electron beam exposure apparatus of the embodiment.

FIG. 6 is a top view of the deflector array substrate.

FIG. 7 is a diagram showing the shape of an opening and an electrode in an opening unit of a deflector array substrate and an electric field formed by the electrode.

8 is a side view and an enlarged sectional view of a first shaping deflector array 4, a second shaping deflector array 5, and a child beam deflector array 9. FIG.

FIG. 9 is a diagram illustrating division of a deflection range in the embodiment.

FIG. 10 is a diagram illustrating division of a deflection range in the embodiment.

FIG. 11 is a view showing the shape of an opening and an electrode in an opening unit of a deflector array substrate in a modification, and an electric field formed by the electrode.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Electron gun 3 ... 1st aperture array 4 ... 1st shaping deflector array 5 ... 2nd shaping deflector array 6 ... 2nd aperture array 7 ... Child beam blanker 8 ... Stop 9 ... Beam deflector array 10-1 10-8: Magnetic lens 11: Common blanker 12: Main deflector 13: Sub deflector 14: Aberration / Coulomb blur correction unit 15: Wafer 16: Stage mechanism

Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat II (Reference) H01J 37/305 H01J 37/305 B H01L 21/30 541M (72) Inventor Mitsuhiro Nakano 1-32 Asahimachi, Nerima-ku, Tokyo No. 1 Inside Advantest Co., Ltd. (72) Inventor Tomohiko Abe 1-32-1 Asahicho, Nerima-ku, Tokyo (72) Inventor Takeshi Haraguchi Takeshi Haraguchi 1-32-1 Asahicho, Nerima-ku, Tokyo No. Within Advantest Co., Ltd. (72) Inventor Hiroshi Yasuda 1-32-1 Asahicho, Nerima-ku, Tokyo Intranet Co., Ltd. (72) Kenichi Miyazawa 1-32-1 Asahicho, Nerima-ku, Tokyo Stock (72) Inventor Shigeru Maruyama 1-32-1, Asahicho, Nerima-ku, Tokyo Inside Advantest

Claims (12)

[Claims] A beam source for generating an electron beam; shaping means for shaping the electron beam; deflection means for changing an irradiation position of the electron beam on a sample; An electron beam exposure apparatus comprising: a projection unit that forms an image on the electron beam; a shaping unit that divides the electron beam to generate a plurality of sub-beams; and that the plurality of sub-beams each have a desired rectangular shape. An electron beam exposure apparatus comprising: a rectangular shaping unit for shaping; and a sub-beam deflecting unit for respectively displacing the irradiation positions of the plurality of sub-beams. 2. The electron beam exposure apparatus according to claim 1, wherein said rectangular shaping means independently shapes at least a plurality of said plurality of sub-beams into a desired rectangular shape. The means is an electron beam exposure apparatus for independently displacing at least a plurality of irradiation positions of the plurality of sub-beams. 3. The electron beam exposure apparatus according to claim 1, further comprising a blanker for controlling whether or not the sample is irradiated with the electron beam. 4. The electron beam exposure apparatus according to claim 1, wherein the plurality of sub-beams are independently controlled to irradiate the sample. An electron beam exposure apparatus including a blanker. 5. The electron beam exposure apparatus according to claim 1, wherein said dividing means has a plurality of first shaping apertures having a predetermined rectangular shape arranged at a predetermined pitch. A plurality of sub-beams, the plurality of sub-beams are a plurality of beams having a predetermined rectangular shape arranged at the predetermined pitch, and the rectangular shaping unit is configured to deflect the plurality of sub-beams, respectively. A shaping / deflecting unit, having a plurality of rectangular second shaping openings arranged corresponding to the predetermined pitch, wherein the plurality of sub-beams deflected by the first shaping / deflecting unit correspond to the plurality of sub-beams. An electron beam exposure apparatus, comprising: a shaping aperture array that irradiates a second shaping aperture; and a second shaping / deflecting unit that returns the directions of the plurality of sub-beams that have passed through the plurality of second shaping apertures. 6. The electron beam exposure apparatus according to claim 5, wherein the first and second shaping / deflecting units each include a plurality of apertures arranged corresponding to the plurality of sub-beams. Shaping deflection having a set of deflection electrodes for forming an electrostatic field provided on both sides of each opening, and a shield electrode provided on a portion other than where the set of deflection electrodes is provided around the plurality of openings. An electron beam exposure apparatus comprising two substrates, wherein directions of an electric field formed by the set of deflection electrodes of the two shaped deflection substrates are different by 90 °, and the two shaped deflection substrates are arranged close to each other. . 7. The electron beam exposure apparatus according to claim 5, wherein the substrate of the dividing unit has a plurality of sets of the plurality of first shaping apertures, and selects one of the plurality of sets. An electron beam exposure apparatus movable in the path of the electron beam. 8. The electron beam exposure apparatus according to claim 1, wherein the sub-beam deflecting unit includes: a plurality of openings arranged corresponding to the arrangement of the plurality of sub-beams; Two deflection substrates are provided, each having a pair of deflection electrodes for forming an electrostatic field provided on both sides and a shield electrode provided in a portion around the plurality of openings other than where the pair of deflection electrodes is provided. An electron beam exposure apparatus, wherein directions of electric fields formed by the pair of deflection electrodes of the two deflection substrates are different by 90 °, and the two deflection substrates are arranged close to each other. 9. The electron beam exposure apparatus according to claim 4, wherein said sub-beam blanker means includes: a plurality of openings arranged corresponding to the arrangement of said plurality of sub-beams; A blanker deflection substrate including: a set of provided deflection electrodes for forming an electrostatic field; and a shield electrode provided in a portion around the plurality of openings other than where the set of deflection electrodes is provided; and And a shield plate for shielding the plurality of sub-beams deflected by the set of (1). 10. The electron beam exposure apparatus according to claim 1, wherein the deflecting unit includes a main deflecting unit and a sub deflecting unit having a smaller deflection range than the main deflecting unit. The main deflection range corresponding to the deflectable range of the means is divided into a plurality of sub-deflection ranges corresponding to the deflectable range of the sub-deflection means, and each sub-deflection range corresponds to the deflectable range of the sub-beam deflection means. Exposure processing in the child beam deflection range by changing the deflection position of the child beam deflection means after fixing the deflection positions of the main deflection means and the sub deflection means. The exposure process in the sub deflection range is repeated by changing the deflection position of the sub deflection unit to perform the exposure process in the sub deflection range, and the deflection position of the main deflection unit is changed by changing the deflection position of the main deflection unit. Within the deflection range An electron beam exposure apparatus that performs exposure processing within the main deflection range by repeating exposure processing. 11. The electron beam exposure apparatus according to claim 10, wherein the plurality of sub-beam deflection ranges are separated from each other. 12. The electron beam exposure apparatus according to claim 11, wherein the deflection unit has a smaller deflection range than the sub-deflection unit, and has a deflection range wider than an arrangement pitch of the plurality of sub-beam deflection ranges. A sub-deflecting unit that divides each sub-deflection range into a plurality of total sub-beam deflection ranges corresponding to a range outside the arranged plurality of sub-beam deflection ranges; After fixing the deflecting positions of the deflecting means and the sub / sub deflecting means, the deflection position of the sub beam deflecting means is changed to perform exposure processing within the sub beam deflecting range. The exposure process within the sub-beam deflection range is repeated by changing the position, and the exposure process within the total sub-beam deflection range is performed. Electron beam exposure apparatus by repeating the exposure process in the range performs exposure processing in the sub-deflection range.