JP2003045789A - Lithographic system and method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a lithographic system that maintains appropriate throughput performance, and at the same time, can improve connection accuracy in a pattern. SOLUTION: As the multilens of an apparatus for drawing a pattern to a wafer by a plurality of charged beams, a multilens 1 is used. In the multilens 1, an electronic lens (lens openings 9a to 9i) using the intersection (a lattice point) between lines X1, X2, X3 in a horizontal direction and lines Y1, Y2, Y3 in the vertical direction for composing a virtual lattice as an axis, and electronic lens (lens openings 9j to 9m) using the center of each square for constituting the virtual lattice as an axis.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a drawing apparatus and a drawing method for drawing a pattern on a sample with a plurality of charged beams, and a device manufacturing method.

[0002]

2. Description of the Related Art In recent years, miniaturization of LSI patterns has progressed. For example, in the field of DRAM, even after the development of 64M,
The device integration plan is proceeding in the order of 256M, 1G, and 4G. Microfabrication technology is important for promoting such an integration plan, and exposure technology is regarded as an extremely important technology among the microfabrication technologies. In particular, the electron beam drawing technique is expected as one of the future exposure means because it can perform fine processing of 0.1 μm or less.

As an electron beam drawing apparatus which has been used conventionally, there are drawing methods using a single beam such as a Gaussian beam method and a variable shaped beam method. However, since these methods have low productivity, mask drawing, VLSI
It has been used only in the R & D and application fields for low volume production ASIC devices.

Recently, research and development of electron beam technology has progressed,
As a method that can be applied to the production of memory devices such as DRAMs, a multi-beam writing method that uses a plurality of electron beams to improve the writing speed has been proposed and researched. Several hundred or more electron beams are required to obtain the throughput of 30 to 40 sheets / hour or more required for semiconductor device production in this multi-beam writing system.
Therefore, it is important to reduce the size of each electron lens that forms an electron beam to form a multi-lens having a high arrangement density.

In the conventional multi-beam drawing apparatus, FIG.
, A plurality of electron lenses forming a multi-electron lens (indicated by a lens aperture 29 in FIG. 10).
Is a plurality of quadrilateral regions (S1
1, S12, S21, ...) are arranged around the respective axes. Then, among the plurality of unit drawing areas two-dimensionally spread on the wafer by the electron beam formed by the electron lens arranged in each square area,
A pattern is drawn in the corresponding unit drawing area. In this way, after the field composed of the unit drawing areas of the number corresponding to the number of the plurality of electron lenses is continuously drawn, the next field is drawn in the same manner, and by repeating this, the wafer A pattern is drawn on the entire surface of the exposure area of.

[0006]

However, the conventional multi-electron beam exposure apparatus in which one electron lens is arranged in each quadrangular area forming a virtual lattice has the following problems.

First, when a pattern is drawn in a plurality of unit drawing areas at the same time by using a multi-beam, a connection error due to beam position accuracy occurs in a boundary area between adjacent unit drawing areas. Therefore, in the boundary area of the unit drawing area, the deterioration of the line width accuracy of the pattern drawn by the electron beam has been a problem. As a method of improving the connection accuracy, by drawing an area wider than the unit drawing area,
As for the boundary area, there is a method of overlapping and drawing the patterns of the adjacent unit drawing areas. However, according to this method, it is difficult to improve the accuracy of the overwriting because the overwriting is performed in the area where the electron beam deflection amount is maximum (the area farthest from the center of the unit drawing area). .

Secondly, in order to make the irradiation current amount of the electron beam equal to that of other regions (that is, the inner region of the boundary region) in the boundary region where the patterns are overlapped and drawn, the current of each electron beam is increased in the boundary region. 1 when drawing the inner area
It is necessary to reduce the number to / 2 and perform drawing. For example, when the irradiation beam current is controlled by the blanking speed of the electron beam, the blanking speed is twice as high as that of the inner area in the boundary area. Therefore, the throughput performance is limited due to the limitation of increasing the blanking speed. It was

Thirdly, in the pattern drawing by the electron beam, in order to correct the proximity effect, so-called proximity effect correction for controlling the electron beam irradiation amount according to the pattern density is required, which causes the throughput performance to decrease. Was becoming.

As described above, in the electron beam drawing apparatus, how to improve the line width accuracy while maintaining high throughput performance has been a major problem.

The present invention has been made in view of the above background, and an object of the present invention is to provide a drawing apparatus and a drawing method capable of improving the pattern connection accuracy while maintaining a corresponding throughput performance.

[0012]

The first aspect of the present invention is as follows.
A drawing apparatus that draws a pattern on a sample by a plurality of charged beams, and generates a plurality of charged beams having axes as axes of a plurality of grid points on a virtual grid and a plurality of squares forming the grid. It is characterized in that it is provided with a beam generator. According to this configuration, for example, a plurality of charged beams can be generated at a high density, so that multiple writing is facilitated, and thereby, the accuracy of pattern connection can be improved while maintaining a corresponding throughput performance.

According to a preferred embodiment of the present invention, the drawing device has at least two beams generated by the beam generator.
It is preferable to further include a controller for controlling the writing operation so as to multiple-write a pattern in the same region on the sample by the charged beam of the book.

According to a preferred embodiment of the present invention, the controller uses a part of the plurality of charged beams to improve the connection accuracy of partial patterns, and It is preferable to control the drawing operation so that the other part is used for the proximity effect correction.

According to a preferred embodiment of the present invention, the drawing apparatus further comprises a scanning mechanism for scanning the sample with the plurality of charged beams having a width that is an integral multiple of the width of the quadrangle forming the lattice. Is preferred.

According to a preferred embodiment of the present invention, the beam generator preferably has a multi-lens including a plurality of electron lenses. Here, each electron lens is preferably a resistor electrode lens.

A second aspect of the present invention relates to a drawing method for drawing a pattern on a sample with a plurality of charged beams, wherein each of a plurality of grid points on a virtual grid and a plurality of quadrangles forming the grid. It is characterized in that a plurality of charged beams each having a center as an axis are generated and a pattern is drawn on a sample by the plurality of charged beams.

A third aspect of the present invention relates to a device manufacturing method, which comprises a step of applying a photosensitive material to a sample and a drawing method according to claim 7 on the photosensitive material of a substrate on which the photosensitive material is applied. The method is characterized by including a step of drawing a pattern and a step of developing the photosensitive material on which the pattern is drawn.

A fourth aspect of the present invention relates to a beam generator for generating a plurality of charged beams, wherein a plurality of grid points on a virtual grid and a center of each of a plurality of squares forming the grid are respectively defined. It is characterized in that a plurality of charged beams having axes are generated.

A fifth aspect of the present invention relates to a multi-lens, comprising a plurality of electron lenses having axes as axes of a plurality of lattice points on a virtual lattice and a plurality of quadrangles forming the lattice. It is characterized by being provided.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, as a preferred embodiment of the present invention, it is possible to improve the accuracy of drawing connection between unit drawing areas and / or to perform proximity effect correction without deteriorating the throughput performance. A possible multi-electron beam drawing apparatus and method will be described. The present invention is
The present invention can be applied not only to a drawing apparatus and method using an electron beam, but also to a drawing apparatus and method using an ion beam, for example. That is, it should be understood that the present invention can be widely applied to a drawing apparatus and method using a charged beam such as an electron beam or an ion beam.

(Basic Structure of Multi-Lens) FIG. 3 is a view showing the basic structure of a multi-lens according to a preferred embodiment of the present invention. The multi-lens 1 shown in FIG.
Although it is composed of three electron lenses, this is only for convenience of description, and in practice, the multi-lens 1 can be composed of, for example, several hundreds or more electron lenses. The multi-lens composed of such a large number of electron lenses is used as the multi-lens 84 in the electron beam exposure apparatus whose schematic structure is shown in FIG. 9, for example.

Each electron lens constituting the multi-lens 1 shown in FIG. 3 is a resistor electrode lens which is one of electrostatic lenses. The multi-lens 1 is composed of a lens electrode substrate 10 composed of two high resistance electrode substrates 2 and 3, an upper electrode substrate 7 and a lower electrode substrate 8. In each of the electrode substrates 2, 3, 7 and 8, lens openings 9 are formed at positions of a plurality of beam axes 11 through which the charged beam passes. The high-resistor electrode substrates 2 and 3 are formed by penetrating a substrate 4 made of an insulator to form a lens opening 9 and covering the inner wall thereof with a high-resistor layer 5 made of a high-resistance material.
The high resistance layer 5 is electrically connected to the wiring electrode 6 formed on the substrate 4 made of an insulator. Here, the high resistance electrode substrates 2 and 3 are bonded to each other to form a lens electrode substrate 10, and an upper electrode substrate 7 and a lower electrode substrate 8 made of a low resistance substance are formed on the upper and lower surfaces thereof, respectively. It is joined.

FIG. 6 is a diagram showing a sectional structure of one electron lens extracted from the multi-lens 1 shown in FIG. The high resistance layer 5 has a cylindrical shape, a predetermined electric potential is applied to the central portion in the axial direction from the lens control power supply 41 through the wiring electrode 6, and both axial ends are made of a low resistance body. It is grounded via the upper electrode substrate 7 and the lower electrode substrate 8. Therefore, the electric field intensity distribution in the lens opening 9, that is, the characteristic of the electrostatic lens is determined by the specific resistance of the high resistance layer 5, the specific resistance of the upper electrode substrate 7, the specific resistance of the lower electrode substrate 8, and the wiring electrode 6. It is determined by the potential applied to the center. Further, as can be seen from the sectional structure shown in FIG. 6, the beam axis 1 of the charged beam passing through the electron lens 1
No. 1 is surrounded by the high resistance layer 5 and the low resistance bodies (the upper electrode substrate 7 and the lower electrode substrate 8), so that even if the scattered beam is incident on the side wall in the electron lens, Since the charge escapes through 5, it is possible to prevent the charge-up phenomenon in the electron lens. Therefore, it is possible to prevent instability of the focusing position of the charged beam and deterioration of the lens focusing characteristic.

The high resistance layer 5 in the lens opening 9 of each electrostatic lens forming the multi-lens 1 has a function of shielding the influence of the electric field generated by the adjacent electrode (high resistance layer 5). Therefore, the influence of crosstalk between adjacent electrostatic lenses can be prevented.

Further, the upper electrode substrate 7 and the lower electrode substrate 8 made of a low resistance material provided above and below the lens electrode substrate 10 are affected by the disturbance of the electric field distribution spreading from the lens opening 9 to the outside of the lens and the influence of crosstalk. Has a function to suppress.

Here, the thickness of the upper electrode substrate 7 and the lower electrode substrate 8 is T ≧, where T is the thickness of each of the upper electrode substrate and the lower electrode substrate and D is the diameter of the lens opening 9.
Setting to 0.3D can prevent crosstalk between the lens openings 9 (high resistance layer 5) that are close to each other.

The resistor electrode lens which is each electrostatic lens forming the multi-lens 1 has a simple cylindrical structure and does not require complicated shield electrodes 74 and 75 as shown in FIG. The effective area of the lens opening 9 can be increased. As a result, the uniformity of the electric field distribution in the lens aperture 9 is increased, so that the lens aberration of the electrostatic lens can be reduced. Further, the mechanical precision required for the electrode shape can be relaxed. In addition, complicated shield electrode 7
The fact that 4 and 75 are not necessary can be understood as a feature that the area occupied by each electrostatic lens is reduced and the electrostatic lens can be highly integrated easily. Note that FIG.
In, 71, 72 and 73 are electrode substrates.

FIG. 4 is a diagram showing an example of high integration of the resistor electrode lens. Since the multi-lens 1 including the resistor electrode lens shown in FIG. 4 does not require the shield electrode as shown in FIG. 8, the horizontal line X1, which forms a virtual lattice (dotted line in FIG. 4), is formed. Intersection points of X2, X3 and vertical lines Y1, Y2, Y3 (that is, grid points)
In addition to the electronic lens (lens openings 9a to 9i) having
It is easy to dispose the electron lenses (lens openings 9j to 9m) having the center of each quadrangle forming the virtual lattice as an axis.

On the other hand, in a multi-lens type having a shield electrode as shown in FIG. 8, it is difficult to arrange the lens apertures close to each other because of the shield electrode.
Therefore, as shown in FIG. 10, a virtual lattice (see FIG.
Then, only at the intersections (lattice points) of the horizontal lines X1, X2, X3 and the vertical lines Y1, Y2, Y3 that make up the dotted lines), the electron lenses (lens openings 29a, 2a,
9b ...) is easier to design.

That is, in order to densely arrange the electron lenses, it is advantageous to adopt the low resistance electrode lens in terms of improvement of the arrangement density, simplification of the structure, facilitation of the design and the like. For example, when a low resistance electrode lens is adopted, it is possible to obtain an array density that is more than double that of an electron lens that requires a shield electrode. However, the present invention does not exclude the use of an electron lens of a type having a shield electrode as shown in FIG. 8, for example.

(Optimization of on-axis electric field distribution) Another feature of the resistor electrode lens is that the on-axis electric field is changed by changing the resistance value of the high resistance layer 5 in the lens aperture 9 along the beam axis direction. This is a point where the distribution can be arbitrarily determined, and thus an electric field distribution suitable for the desired focusing characteristics of the electrostatic lens can be formed.

FIG. 7 shows the surface potential of the high resistance layer 5 required to obtain a constant focal length when the resistance value of the high resistance layer 5 of the resistance electrode lens shown in FIG. 6 is changed. It is a figure. In this example, the diameter of the lens opening 9 is 160 μm, the thickness of each of the high resistance electrode substrates 2 and 3 is 300 μm,
The upper electrode number 7 and the lower electrode plate 8 each have a thickness of 10
It is a characteristic when the electrostatic lens is a deceleration system with 0 μm. Here, FIGS. 7A, 7B, and 7C show 50 Ke.
The position and surface potential of the high resistance layer 5 are shown for three types of resistance value distributions for setting the focal length to 1 m when the V electron beam is incident on the electrostatic lens. Figure 7
(A) is an example in which the resistance value of the high resistance layer 5 is constant with respect to the beam axis. 7 (b) and 7 (c) are examples in which the resistance value of the high resistance layer 5 is divided into two along the beam axis. Of these, FIG. 7 (b) shows the resistance values on the incident and exit sides of the beam. This is an example in which the resistance value on the side of the wiring layer, which is the center in the axial direction, is set to double. On the contrary, FIG. In this example, the resistance value is ½. The results of the respective beam focusing characteristics are as follows: (a) 0.16 μm, (b) 0.14 μm,
(C) is 0.23 μm, and the lens electric field formed by the resistance distribution of (b) shows the best value.

This is because the potential gradient on the axis is made smooth by increasing the potential gradient on the input and output sides of the electrostatic lens. Among the lens aberrations, the spherical aberration component is particularly important. The improvement effect of is recognized. Here, the resistance value of the high-resistivity layer is divided into two along the beam axis, but the resistance value may be changed into multiple divisions or continuously changed. In this case, the same or higher effect can be obtained. be able to.
Generally, the focusing characteristic of the electrostatic lens can be improved by forming the high resistance layer so that the differential coefficient of the resistance value becomes positive.

As another example of adjusting the on-axis electric field distribution of the electron lens, there is a method of applying a voltage suitable for the lens characteristics to the wiring electrodes of each step in which the high-resistivity electrode substrate has a multi-step structure. .

(Temperature Control) The resistor electrode lens according to the preferred embodiment of the present invention is one in which a voltage is applied to both ends of the high resistance layer 5 to form an electric field in the lens aperture. The high resistance layer 5 is used by always supplying a constant minute current. Therefore, by providing a cooling mechanism for the resistor electrode lens and controlling the temperature by this, the resistor electrode lens can be operated stably.

FIG. 5 is a view showing a cooling mechanism of the multi-lens 1 which is composed of a plurality of resistor electrode lenses. The cooling mechanism of the multi-lens 1 composed of a plurality of resistor electrode lenses has a cooling plate 33, a cooling rod 34, a temperature sensor 35, and a temperature control unit 36, whereby each resistor electrode lens (see FIG. The lens aperture 9) is maintained at a constant temperature. Here, by bringing the cooling plate 33 into thermal contact with the upper electrode substrate 7 and the lower electrode substrate 8 having high thermal conductivity, it is possible to enhance temperature uniformity and enhance cooling efficiency.

The heat generation of the resistor electrode lens depends on various conditions such as the resistance value of the high resistance material used, the lens shape, and the voltage applied to the lens. For example, in FIG. 3, when the high resistance layer 5 having a specific resistance of 10 ⁸ Ωcm is used, the thickness of the high resistance electrode substrate 2 is 500 μm, the lens aperture diameter is 100 μm, and the film thickness of the high resistance layer 5 is 0.2μ
m, the number of electronic lenses (resistor electrode lenses) forming the multi-lens 1 is 5000, and the applied voltage to the wiring electrode 6 is 1000 V, a heat amount of about 0.6 W is generated in the whole multi-lens 1. .

The lower limit of the specific resistance is about 10 ⁶ Ωcm when the maximum heat value of the multilens 1 is 100 W. On the other hand, the upper limit of the specific resistance is that, considering the necessity that the high resistance surface avoids the charge-up caused by the scattered beam and the like and does not adversely affect the lens characteristics for the charged beam passing through the lens, About 10 ⁹ Ωc
m.

(Constituent Material of Multi-lens) Regarding the high resistance electrode substrate 2 shown in FIG. 3, various ceramics (for example, AiN, SiC, Al ₂ O ₃ , Be) are used as the insulating substrate 4.
O) and glass materials can be used. As the high resistance layer 5, a material containing silicon carbide, a nitrogen compound or the like is sputter-deposited on the insulating substrate 4 to obtain 20 n.
It is possible to form a highly resistive film having a uniform thickness of m to 1000 nm.

As another method of forming the high resistance layer 5, there is a method of using a clath glass used as a channel plate material. In this method, the high-resistivity layer 5 can be formed while controlling the resistance value of the inner wall of the lens opening 9 corresponding to the channel by heating in a hydrogen-containing atmosphere to precipitate reduced metal lead.

The material of the wiring electrode 6 is W or T.
A transition metal such as a, a Si-based material, a silicide-based material, or the like can be used.

Further, as the material of the upper and lower electrode substrates 7 and 8, a low resistance material such as a metal substrate or an impurity-doped Si substrate can be adopted.

(Charged Beam Drawing Apparatus and Multiple Exposure by the Apparatus) FIG. 9 is a diagram showing an example of a multi-charged beam drawing apparatus. In this device, an electron beam 88 emitted from a single electron source 81 is collimated by a condenser lens 82 to form a parallel electron beam, which is then divided by a multi-aperture / blanker 83 in the subsequent stage to generate a plurality of electron beams. To do. It should be noted that the multi-aperture / blanker 83 is provided with openings at positions corresponding to the arrangement positions of the electron lenses of the multi-lens 84. In addition, the electron beam deflected by the aperture / blanker is used by the multi-lens 8
Only the electron beam that is not deflected and is not deflected to the corresponding electron lens of No. 4 is incident on the corresponding electron lens of the multi-lens 84 and functions as an electron beam for drawing.

A plurality of electron beams divided by the multi-aperture / blanker 83 are focused by the multi-lens 84 at a predetermined position on the wafer 86, and the stage 87 and the deflector 85 are operated in synchronization, so that the wafer 86 is moved. A pattern can be drawn in the upper exposed area. Here, the multi-lens 84 is an application of the multi-lens 1 described above.

In the above operation, the controller 90 causes the multi-aperture / blanker 83 to draw the pattern.
, The data for instructing ON / OFF of the electron beam (data for instructing whether or not the electron beam is deflected by each aperture / blanker) is provided. Further, the controller 90 provides the deflector 85 with data for controlling the deflection operation, and the stage 87
It provides data for controlling the position of the stage 87. In this way, the controller 90 controls the drawing operation.

In the example shown in FIG. 9, the electron source 81, the condenser lens 82, the multi-aperture / blanker 83 and the multi-lens 84 function as a beam generator for generating a plurality of electron beams for drawing.

The above-mentioned multi-lens 1 is added to the multi-lens 84.
Since it is possible to arrange the resistor electrode lens as the electrostatic lens at a high density by applying
It is possible to use the electron beam 88 having a narrow emission angle of the electron beam emitted from the first electron beam, that is, the electron beam 88 having uniform characteristics. Therefore, the multi-aperture and blanker 8
Since the characteristics of the plurality of electron beams generated in 3 can be made uniform, the uniformity of the plurality of electron beams with which the wafer 86 is irradiated can be improved. It is also easy to increase the irradiation current density.

The beam arrangement and multiple exposure in the charged beam drawing apparatus shown in FIG. 9 according to the preferred embodiment of the present invention will be described below.

In this charged beam drawing apparatus, as shown in FIG. 1, horizontal lines X1 and X forming a virtual lattice.
Electron lenses (lens openings 9a to 9i) whose axes are intersections (lattice points) of lines 2, X3 and vertical lines Y1, Y2, Y3.
And an electron lens (lens apertures 9j to 9m) having the center of each quadrangle forming the virtual lattice as an axis. Therefore, in the arrangement of the electron lenses of this embodiment, the electron lenses (lenses) having the intersections of the horizontal lines X1, X2, X3 and the vertical lines Y1, Y2, Y3 forming the virtual lattice as lenses are used. The arrangement density of the electron lenses is improved as compared with the arrangement of the conventional electron lenses having only the openings 9a to 9i).

In this charged beam drawing apparatus, drawing is performed by setting DX (width in the X direction) × DY (width in the Y direction) as a unit drawing area which is a basic unit of drawing (area for scanning with one charged particle beam). To do. Each area marked with A in FIG. 1 is a unit drawing area. In this charged beam drawing apparatus, since the reduction optical system is not arranged between the multi-lens 84 and the wafer 86, the distance between the centers of adjacent electron beams on the multi-lens 84 and the distance on the wafer 86. The distance between the centers of the electron beams is equal. On the other hand, a reduction optical system may be arranged between the multi-lens 84 and the wafer 86. In this case, the relationship between the distance between the centers of adjacent electron beams on the multi-lens 84 and the distance between the centers of adjacent electron beams on the wafer 86 depends on the magnification of the reduction optical system.

According to the multi-lens of this embodiment,
Horizontal lines X1, X2, X3 forming a virtual lattice
And nine vertical drawing lines Y1, Y2, Y3, the nine unit drawing areas A (S11, S12, S13, S2) are formed by electron lenses (lens openings 9a to 9i) whose axes are intersections (lattice points).
1, S22, S23, S31, S32, and S33) are continuously drawn, and electron lenses (lens openings 9j to 9j) each having the center of each quadrangle forming the virtual lattice as an axis are drawn.
m) four unit drawing areas A '(S'11, S'
12, S'21, S'22) are continuously drawn. Note that this continuous drawing is performed while driving the deflector 85 and the stage 87 in synchronization. As a result, the field consisting of four unit drawing areas A ′ is 2
The pattern is drawn twice. Therefore, since the boundary area of the unit drawing area A ′ is also drawn as an area within the unit drawing area A, the connection accuracy in the boundary area of the unit drawing area A ′ can be significantly improved.

One field consisting of four unit drawing areas A'and the field adjacent thereto can be arranged, for example, at intervals of DX / 2 in the X direction and DY / 2 in the Y direction.

(Proximity Effect Correction Method) The deflection width of each electron beam by the deflector 85 is doubled as described above (for example, when the electron beam is deflected in the X direction and the stage 87 is driven in the Y direction, 2 ×). If it is set to DX), each unit drawing area can be further subjected to multiple exposure. In this case, it is obvious that the connection accuracy is improved, but it is not always necessary to use all the electron beams to improve the connection accuracy. That is, a part of the plurality of electron beams can be used for the proximity effect correction. As an example of the proximity effect correction method, a ghost method that makes the background of the electron beam on the wafer surface constant is also effective, but the beam deflection width is twice the center distance between adjacent electron lenses on the multi-lens. If
As shown in FIG. 2, by dividing into an electron beam for drawing (9a to 9i) and an electron beam for correcting proximity effect (9j to 9m), two functions of connection accuracy and proximity effect correction are simultaneously drawn. be able to.

In this embodiment, an example using a multi-type electrostatic lens using a resistor that can be highly integrated has been mainly described. However, although the beam interval is somewhat widened, the effect of the present invention on connection accuracy and proximity effect correction can be obtained even by using, for example, an electrostatic lens as shown in FIG. 8 that requires a shield electrode.

(Application of Drawing Device) Next, a semiconductor device manufacturing process using the above charged beam drawing device will be described. FIG. 11 is a diagram showing a flow of the whole manufacturing process of the semiconductor device. Step 1 (circuit design)
Then, the circuit of the semiconductor device is designed. Step two
In (mask making), based on the designed circuit pattern,
Generates control data for controlling the charged beam drawing apparatus. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the above mask and wafer. The next step 5 (assembly) is called a post-process, which is a process for making semiconductor chips using the wafer manufactured in step 4, and includes assembly processes (dicing, bonding), packaging processes (chip encapsulation), etc. Including steps. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, semiconductor devices are completed and shipped (step
7) Do.

FIG. 12 is a diagram showing a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step
In 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), a circuit pattern is drawn in the exposure area on the wafer by the above charged beam drawing apparatus. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are scraped off. In step 19 (resist stripping), the unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.

[0058]

As described above, according to the present invention, it is possible to provide a drawing apparatus and a drawing method capable of improving the pattern connection accuracy while maintaining a corresponding throughput performance.

[Brief description of drawings]

FIG. 1 is a diagram showing an arrangement of electron lenses (or charged beams).

FIG. 2 is a diagram showing an example in which a plurality of electron beams are divided into an electron beam for writing and an electron beam for proximity effect correction and are used.

FIG. 3 is a diagram showing a basic structure of a multi-lens according to a preferred embodiment of the present invention.

FIG. 4 is a diagram showing an example of high integration of a resistor electrode lens.

FIG. 5 is a diagram showing a cooling mechanism for a multi-lens.

FIG. 6 is a diagram showing a cross-sectional structure of one resistor electrode lens.

FIG. 7 is a diagram showing characteristics of a variable resistance electrode lens.

FIG. 8 is a diagram showing a structure of an electron lens having a shield electrode.

FIG. 9 is a diagram showing an example of a multi-charged beam drawing apparatus.

FIG. 10 is a diagram showing an arrangement of electron lenses in a conventional multi-lens.

FIG. 11 is a diagram showing a device manufacturing process.

FIG. 12 is a diagram showing a device manufacturing process.

[Explanation of symbols]

1 multi-lens 2,3 High resistance electrode substrate 4 Insulating substrate 5 High resistance layer 6 wiring electrodes 7 Upper electrode substrate 8 Lower electrode substrate 9,9a-9i, 29 Lens aperture 10 Lens electrode substrate 11 beam axis 33 Cooling plate 34 Cooling rod 35 Temperature sensor 36 Temperature control unit 41 Lens control power supply 71, 72, 73 Electrode substrate 81 electron source 82 Condenser lens 83 Multi aperture and blanker 84 multi lens 85 Deflector 86 wafers 87 stages 88 Electron beam (charged beam) 90 controller

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Claims (10)

[Claims] 1. A drawing apparatus for drawing a pattern on a sample by a plurality of charged beams, wherein a plurality of grid points on a virtual grid and centers of a plurality of quadrangles forming the grid are axes. A drawing apparatus comprising a beam generator that generates a plurality of charged beams. 2. The controller further comprises a controller for controlling a writing operation so as to multiple-draw a pattern in the same region on the sample by at least two charged beams generated by the beam generator. The drawing device according to 1. 3. The controller utilizes a part of the plurality of charged beams to improve a partial pattern connection accuracy, and uses another part of the plurality of charged beams for a proximity effect correction. The drawing apparatus according to claim 2, wherein the drawing operation is controlled so that the drawing apparatus is used. 4. The drawing apparatus according to claim 1, further comprising a scanning mechanism that scans the sample with the plurality of charged beams with a width that is an integral multiple of the width of a quadrangle forming the grid. 5. The drawing apparatus according to claim 1, wherein the beam generator has a multi-lens including a plurality of electron lenses. 6. The drawing device according to claim 5, wherein each of the electron lenses is a resistor electrode lens. 7. A drawing method for drawing a pattern on a sample with a plurality of charged beams, wherein a plurality of grid points on a virtual grid and a center of each of a plurality of quadrangles forming the grid are axes. A drawing method, wherein a plurality of charged beams are generated and a pattern is drawn on a sample by the plurality of charged beams. 8. A method for manufacturing a device, which comprises a step of applying a photosensitive material to a sample, and a step of drawing a pattern on the photosensitive material of a substrate on which the photosensitive material is applied by the drawing method according to claim 7. And a step of developing the patterned photosensitive material, and a method for manufacturing a device. 9. A beam generator for generating a plurality of charged beams, wherein a plurality of charged points having axes as axes of a plurality of grid points on a virtual grid and a plurality of squares forming the grid, respectively. A beam generator, which generates a beam. 10. A multi-lens comprising: a plurality of grid points on a virtual grid and a plurality of electron lenses having axes of respective centers of a plurality of quadrangles forming the grid.