CN108872184B - 一种sers芯片的制备方法 - Google Patents
一种sers芯片的制备方法 Download PDFInfo
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- CN108872184B CN108872184B CN201810239740.9A CN201810239740A CN108872184B CN 108872184 B CN108872184 B CN 108872184B CN 201810239740 A CN201810239740 A CN 201810239740A CN 108872184 B CN108872184 B CN 108872184B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
- G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
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CN108872184B true CN108872184B (zh) | 2021-10-08 |
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CN109781708B (zh) * | 2019-03-13 | 2024-05-14 | 福建师范大学 | 一种毛细管sers基底的制备方法及sers毛细管 |
CN110441284B (zh) * | 2019-07-23 | 2022-02-15 | 海南大学 | 一种可用于痕量检测的表面增强拉曼散射芯片的制备方法及所得产品和应用 |
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US6970239B2 (en) * | 2002-06-12 | 2005-11-29 | Intel Corporation | Metal coated nanocrystalline silicon as an active surface enhanced Raman spectroscopy (SERS) substrate |
US7460224B2 (en) * | 2005-12-19 | 2008-12-02 | Opto Trace Technologies, Inc. | Arrays of nano structures for surface-enhanced Raman scattering |
CN103115912B (zh) * | 2013-01-23 | 2015-03-18 | 中国科学院合肥物质科学研究院 | 一种应用于现场检测的表面增强拉曼光谱打印试纸及其制备方法 |
CN103344624B (zh) * | 2013-07-03 | 2016-05-18 | 北京工业大学 | 一种溶液法制备表面增强拉曼散射基底的方法及应用 |
CN107451077B (zh) * | 2013-08-27 | 2020-08-18 | 珠海艾派克微电子有限公司 | 测试头、芯片加工装置及显示芯片类型号的方法 |
CN104730059B (zh) * | 2015-03-18 | 2017-08-25 | 苏州大学 | 一种点阵列表面增强拉曼基底及制备方法 |
CN107290326B (zh) * | 2016-04-12 | 2020-07-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | 芯片器件及其制作方法 |
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Effective date of registration: 20200714 Address after: Room 406, building 09, Northwest District of Suzhou nano City, No.99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Applicant after: Suzhou Infineon nanotechnology Co.,Ltd. Address before: 215123 7 D building, 398 Shui Shui Road, Suzhou Industrial Park, Jiangsu Applicant before: SUZHOU TIANJI INNOVATION NANO TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20231218 Address after: Room 301, Building NE-37, Northeast District, Suzhou Nanocity, No. 99 Jinjihu Avenue, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215124 Patentee after: Suzhou Nawei Life Technology Co.,Ltd. Address before: Room 406, building 09, northwest Suzhou nano City, 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou 215000 Patentee before: Suzhou Infineon nanotechnology Co.,Ltd. |
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