CN108866620B - 一种制备区熔单晶的线圈对中装置 - Google Patents
一种制备区熔单晶的线圈对中装置 Download PDFInfo
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- CN108866620B CN108866620B CN201810713329.0A CN201810713329A CN108866620B CN 108866620 B CN108866620 B CN 108866620B CN 201810713329 A CN201810713329 A CN 201810713329A CN 108866620 B CN108866620 B CN 108866620B
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- 238000004857 zone melting Methods 0.000 title claims abstract description 32
- 239000013078 crystal Substances 0.000 claims description 30
- 229910000831 Steel Inorganic materials 0.000 claims description 18
- 239000010959 steel Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 abstract description 14
- 238000005299 abrasion Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810713329.0A CN108866620B (zh) | 2018-06-29 | 2018-06-29 | 一种制备区熔单晶的线圈对中装置 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201810713329.0A CN108866620B (zh) | 2018-06-29 | 2018-06-29 | 一种制备区熔单晶的线圈对中装置 |
Publications (2)
Publication Number | Publication Date |
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CN108866620A CN108866620A (zh) | 2018-11-23 |
CN108866620B true CN108866620B (zh) | 2023-08-04 |
Family
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Family Applications (1)
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CN201810713329.0A Active CN108866620B (zh) | 2018-06-29 | 2018-06-29 | 一种制备区熔单晶的线圈对中装置 |
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CN (1) | CN108866620B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113061977B (zh) * | 2021-03-29 | 2024-10-18 | 中环领先半导体材料有限公司 | 一种区熔单晶炉内轴及夹持结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008308347A (ja) * | 2007-06-12 | 2008-12-25 | Covalent Materials Corp | 単結晶引上方法 |
CN201713605U (zh) * | 2010-07-20 | 2011-01-19 | 西安理工晶体科技有限公司 | 一炉次中能够拉制多组硅芯的硅芯炉 |
CN102560644A (zh) * | 2012-01-14 | 2012-07-11 | 天津市环欧半导体材料技术有限公司 | 一种用于太阳能电池的方形区熔硅单晶生产方法 |
CN103882529A (zh) * | 2012-12-21 | 2014-06-25 | 有研光电新材料有限责任公司 | 一种晶体生长炉中籽晶与坩埚对中的调试方法及装置 |
CN208395313U (zh) * | 2018-06-29 | 2019-01-18 | 天津中环领先材料技术有限公司 | 一种区熔炉线圈对中装置 |
-
2018
- 2018-06-29 CN CN201810713329.0A patent/CN108866620B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008308347A (ja) * | 2007-06-12 | 2008-12-25 | Covalent Materials Corp | 単結晶引上方法 |
CN201713605U (zh) * | 2010-07-20 | 2011-01-19 | 西安理工晶体科技有限公司 | 一炉次中能够拉制多组硅芯的硅芯炉 |
CN102560644A (zh) * | 2012-01-14 | 2012-07-11 | 天津市环欧半导体材料技术有限公司 | 一种用于太阳能电池的方形区熔硅单晶生产方法 |
CN103882529A (zh) * | 2012-12-21 | 2014-06-25 | 有研光电新材料有限责任公司 | 一种晶体生长炉中籽晶与坩埚对中的调试方法及装置 |
CN208395313U (zh) * | 2018-06-29 | 2019-01-18 | 天津中环领先材料技术有限公司 | 一种区熔炉线圈对中装置 |
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CN108866620A (zh) | 2018-11-23 |
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PB01 | Publication | ||
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Effective date of registration: 20181204 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Applicant after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Applicant before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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GR01 | Patent grant | ||
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Effective date of registration: 20240131 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China |
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CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Sun Jian Inventor after: Zhao Yang Inventor after: Liu Kun Inventor after: Yao Zhiqiang Inventor after: Chen Yuqiao Inventor after: Chu Zhanbin Inventor after: Wang Guangming Inventor after: Sun Chenguang Inventor after: Wang Yanjun Inventor before: Zhao Yang Inventor before: Liu Kun Inventor before: Yao Zhiqiang Inventor before: Chen Yuqiao Inventor before: Chu Zhanbin Inventor before: Wang Guangming Inventor before: Sun Chenguang Inventor before: Wang Yanjun Inventor before: Sun Jian |