CN108866620A - 一种制备区熔单晶的线圈对中装置 - Google Patents
一种制备区熔单晶的线圈对中装置 Download PDFInfo
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- CN108866620A CN108866620A CN201810713329.0A CN201810713329A CN108866620A CN 108866620 A CN108866620 A CN 108866620A CN 201810713329 A CN201810713329 A CN 201810713329A CN 108866620 A CN108866620 A CN 108866620A
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- 239000013078 crystal Substances 0.000 title claims abstract description 30
- 238000004857 zone melting Methods 0.000 title claims abstract description 29
- 230000008859 change Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 7
- 238000005299 abrasion Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- PRPINYUDVPFIRX-UHFFFAOYSA-N 1-naphthaleneacetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CC=CC2=C1 PRPINYUDVPFIRX-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810713329.0A CN108866620B (zh) | 2018-06-29 | 2018-06-29 | 一种制备区熔单晶的线圈对中装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810713329.0A CN108866620B (zh) | 2018-06-29 | 2018-06-29 | 一种制备区熔单晶的线圈对中装置 |
Publications (2)
Publication Number | Publication Date |
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CN108866620A true CN108866620A (zh) | 2018-11-23 |
CN108866620B CN108866620B (zh) | 2023-08-04 |
Family
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Family Applications (1)
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CN201810713329.0A Active CN108866620B (zh) | 2018-06-29 | 2018-06-29 | 一种制备区熔单晶的线圈对中装置 |
Country Status (1)
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CN (1) | CN108866620B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008308347A (ja) * | 2007-06-12 | 2008-12-25 | Covalent Materials Corp | 単結晶引上方法 |
CN201713605U (zh) * | 2010-07-20 | 2011-01-19 | 西安理工晶体科技有限公司 | 一炉次中能够拉制多组硅芯的硅芯炉 |
CN102560644A (zh) * | 2012-01-14 | 2012-07-11 | 天津市环欧半导体材料技术有限公司 | 一种用于太阳能电池的方形区熔硅单晶生产方法 |
CN103882529A (zh) * | 2012-12-21 | 2014-06-25 | 有研光电新材料有限责任公司 | 一种晶体生长炉中籽晶与坩埚对中的调试方法及装置 |
CN208395313U (zh) * | 2018-06-29 | 2019-01-18 | 天津中环领先材料技术有限公司 | 一种区熔炉线圈对中装置 |
-
2018
- 2018-06-29 CN CN201810713329.0A patent/CN108866620B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008308347A (ja) * | 2007-06-12 | 2008-12-25 | Covalent Materials Corp | 単結晶引上方法 |
CN201713605U (zh) * | 2010-07-20 | 2011-01-19 | 西安理工晶体科技有限公司 | 一炉次中能够拉制多组硅芯的硅芯炉 |
CN102560644A (zh) * | 2012-01-14 | 2012-07-11 | 天津市环欧半导体材料技术有限公司 | 一种用于太阳能电池的方形区熔硅单晶生产方法 |
CN103882529A (zh) * | 2012-12-21 | 2014-06-25 | 有研光电新材料有限责任公司 | 一种晶体生长炉中籽晶与坩埚对中的调试方法及装置 |
CN208395313U (zh) * | 2018-06-29 | 2019-01-18 | 天津中环领先材料技术有限公司 | 一种区熔炉线圈对中装置 |
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Publication number | Publication date |
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CN108866620B (zh) | 2023-08-04 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20181204 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Applicant after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Applicant before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240131 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |