CN108832288B - Back cavity gap dual-frequency millimeter wave antenna based on Substrate Integrated Waveguide (SIW) - Google Patents
Back cavity gap dual-frequency millimeter wave antenna based on Substrate Integrated Waveguide (SIW) Download PDFInfo
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- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
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Abstract
The invention provides a back cavity gap dual-frequency millimeter wave antenna based on a Substrate Integrated Waveguide (SIW), which comprises a radiation layer, a feed layer and a composite conversion structure, wherein the radiation layer consists of a first metal coating and a first rectangular dielectric plate, two parallel rectangular radiation gaps are etched on the first metal coating, and a first metallized through hole is arranged on the first rectangular dielectric plate and used for forming a circular Substrate Integrated Waveguide (SIW) resonant cavity; the feed layer consists of a second rectangular dielectric plate, a second upper metal coating and a second lower metal coating, wherein second metalized through holes distributed in a gradually changed U shape are formed in the second rectangular dielectric plate to form a substrate integrated waveguide, and rectangular coupling gaps are etched in the second upper metal coating and used for gap coupling feed; the invention realizes the performance of millimeter wave dual-band radiation and solves the technical problems of narrow impedance bandwidth, low antenna radiation gain and efficiency and complex feed structure of the dual-band millimeter wave antenna in the prior art.
Description
Technical Field
The invention belongs to the technical field of antennas, and particularly relates to a cavity-backed slot dual-frequency millimeter wave antenna based on a Substrate Integrated Waveguide (SIW) in the field of cavity-backed slot antennas, which can be used for a millimeter wave wireless communication system.
Background
The conventional 4G wireless communication system generally adopts a planar printed antenna, but the planar printed antenna has lower gain and antenna efficiency and is not suitable for millimeter wave communication. The substrate integrated waveguide SIW has the advantages of low loss, simple manufacture, easy planar circuit integration and the like, and has wider application prospect in millimeter wave antennas. Compared with 4G communication, 5G has extremely high transmission rate, higher channel capacity and power capacity and extremely low transmission delay. Obviously, the conventional planar printed antenna has not been able to meet the demands of the next generation of communications.
With the high-speed growth of mobile data traffic, the conventional radio spectrum at 3GHz cannot meet the requirements of 5G wireless communication. According to the communication principle, the maximum signal bandwidth of wireless communication is about 5% of the carrier frequency, so the lower the carrier frequency, the narrower the signal bandwidth that can be achieved, and the lower the signal transmission rate.
For example, the patent of Beijing post and telecommunications university "a planar antenna for dual-band millimeter wave system" (application No. 201410674715.5, publication No. CN 104393416A) in its application proposes what is called a dual-band antenna for millimeter wave band. The antenna utilizes the symmetrical E-shaped groove arranged in the middle of the radiation patch to provide a current path required by double-frequency resonance, and differential signals are input on two sides of the lower surface of the dielectric plate to feed the antenna. The antenna has the advantages of simple overall structure and symmetrical directional diagram, but the antenna still has the defects of complex feed structure, low antenna radiation efficiency and no contribution to large-scale popularization and application of the antenna.
The patent of southeast university's application of ' a cavity backed slot dual-frequency circularly polarized antenna based on substrate integrated waveguide ' (application number: 201611184431.3, publication number: CN 106654591A) proposes a cavity backed slot dual-frequency circularly polarized millimeter wave antenna based on substrate integrated waveguide. The millimeter wave antenna utilizes an approximately circular back cavity formed by the SIW and two exponentially-graded slots on the front surface of the circular back cavity for providing dual-frequency circularly polarized radiation. The antenna has the advantages of directional radiation, dual-frequency circular polarization and the like. However, the antenna still has the disadvantages that the radiation gain of the antenna is low and the impedance bandwidth is narrow, so that the use of the antenna is limited.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a back cavity slot dual-frequency millimeter wave antenna based on the SIW technology, which is used for solving the technical problems of narrow bandwidth, low antenna gain and low efficiency of the conventional millimeter wave dual-frequency antenna.
In order to achieve the purpose, the invention adopts the technical scheme that:
a back cavity slot dual-frequency millimeter wave antenna based on a Substrate Integrated Waveguide (SIW) comprises a radiation layer, a feed layer and a composite conversion structure, wherein the radiation layer consists of a first metal coating and a first rectangular dielectric slab; the first metal coating is printed on the upper surface of the first rectangular dielectric plate; the feed layer comprises a second rectangular dielectric plate, a second upper metal coating and a second lower metal coating; the composite conversion structure is etched at the edge of the short side of the lower surface of the second lower metal coating of the second rectangular dielectric plate;
the first rectangular dielectric plate is provided with a first metalized through hole penetrating through the first metal coating and the first rectangular dielectric plate, and the first metalized through hole forms a Substrate Integrated Waveguide (SIW) resonant cavity in circular distribution; two parallel rectangular radiation gaps are etched on two sides of the center of the upper surface of the first metal cladding layer, and are symmetrically distributed on an xoz plane which is vertical to the first rectangular dielectric plate;
one side of the short edge of the second rectangular dielectric plate is provided with a second metalized through hole which penetrates through the second upper metal coating and the second lower metal coating and is distributed in a gradually changed U shape, and the geometric center of the second metalized through hole distributed in the gradually changed U shape is symmetrically distributed about the y axis of the geometric center of the second rectangular dielectric plate; the second upper metal coating is etched with rectangular coupling gaps at the bottoms of second metalized through holes distributed in a gradually changed U shape, and the geometric centers of the rectangular coupling gaps are symmetrically distributed about the y axis of the geometric center of the second rectangular dielectric slab;
the geometric center of the rectangular coupling gap is overlapped with the center of a circular Substrate Integrated Waveguide (SIW) resonant cavity formed by the first metallized through hole along the z-axis direction and used for gap coupling feeding;
the diameter of the substrate integrated waveguide SIW resonant cavity formed by the first metallized through holes in circular distribution is D, wherein D is more than or equal to 12.8mm and less than or equal to 13.2 mm; the diameter and the spacing of each metalized through hole are expressed according to the formula
Calculation of where dvFor each diameter of the metallized via, PvThe distance between the circle centers of two adjacent metallized through holes is the distance between the circle centers of the two adjacent metallized through holes;
the distance between the two parallel rectangular radiation gaps is dxWherein d is not less than 2.3mmxLess than or equal to 2.5 mm; the length of the rectangular radiation gap is LxA width of LyWherein L is more than or equal to 0.9mmx≤1.1mm；9mm≤Ly≤9.4m；
The diameter and the interval of the second metallized through holes distributed in the gradually changed U shape are calculated according to the formula
Calculating, wherein d is the diameter of each metalized through hole, and P is the distance between the circle centers of two adjacent metalized through holes; the distance between the centers of the adjacent metallized through holes along the x axis in the opening direction of the second metallized through holes distributed in the gradually changed U shape is m1Wherein m is not less than 4mml≤4.2mm；
The distance between the bottom of the rectangular coupling gap and the circle center of the bottom of the second metalized through hole distributed in a gradually changed U shape is m, wherein m is more than or equal to 0.7mm and less than or equal to 0.8mm, and the length of the rectangular coupling gap is SlWidth of SwWherein S is not less than 3.7mml≤3.9mm；0.25mm≤Sw≤0.35mm。
Compared with the prior art, the invention has the following advantages:
firstly, the invention adopts the technical scheme that a first rectangular dielectric plate is provided with a first metalized through hole to form a Substrate Integrated Waveguide (SIW) resonant cavity which is distributed in a circular manner, and two parallel rectangular radiation gaps are etched on the first metal coating layer and two sides of the center of the upper surface of the first rectangular dielectric plate; rectangular coupling gaps are etched in the upper metal covering layer of the second rectangular dielectric plate, and the second metallized through holes distributed in a gradually changed U shape form the substrate integrated waveguide.
Secondly, rectangular coupling gaps are etched on the upper metal covering layer of the second rectangular dielectric plate, the substrate integrated waveguide is formed by the second metalized through holes distributed in a gradually changed U shape, and the structure is used for forming gap coupling feed.
Drawings
Fig. 1 is a schematic perspective view of an antenna according to the present invention.
Fig. 2 is a bottom view of a second rectangular dielectric plate of the antenna of the present invention.
Fig. 3 is a top view of a first rectangular dielectric plate of the antenna of the present invention.
Fig. 4 is a top view of a second rectangular dielectric plate of the antenna of the present invention.
Fig. 5 is a graph of simulated return loss parameters of an antenna of the present invention as a function of frequency.
Fig. 6 is a graph of simulated antenna gain parameters versus frequency for an antenna of the present invention.
Fig. 7 is a graph of xoz plane and yoz plane simulated patterns for the antenna of the present invention at 28 GHz.
Fig. 8 is a xoz plane and yoz plane pattern simulated at 38GHz for the antenna of the present invention.
Detailed Description
The invention is described in further detail below with reference to the following figures and examples:
example 1
Referring to fig. 1 and 2, a cavity backed slot dual-frequency millimeter wave antenna based on a substrate integrated waveguide SIW includes a radiation layer 1, a feed layer 2 and a composite conversion structure 3, where the radiation layer 1 is composed of a first metal cladding 11 and a first rectangular dielectric plate 12; the first metal coating 11 is printed on the upper surface of the first rectangular dielectric plate 12; the feed layer 2 comprises a second rectangular dielectric plate 22, a second upper metal cladding layer 21 and a second lower metal cladding layer 23; the composite conversion structure 3 is etched at the edge of the short side of the lower surface of the second lower metal cladding 23 of the second rectangular dielectric plate 22;
the first rectangular dielectric plate 12 is provided with a first metalized through hole 13 penetrating through the first metal coating 11 and the first rectangular dielectric plate 12, and the first metalized through hole 13 forms a Substrate Integrated Waveguide (SIW) resonant cavity distributed in a circular shape; two parallel rectangular radiation slits 111 are etched on two sides of the center of the upper surface of the first metal cladding layer 11, and are symmetrically distributed about the xoz plane perpendicular to the first rectangular dielectric slab 12;
one side of the short edge of the second rectangular dielectric slab 22 is provided with a second metalized through hole 24 which penetrates through the second upper metal coating 21 and the second lower metal coating 23 and is distributed in a gradually changed U shape, and the geometric center of the second metalized through hole 24 distributed in the gradually changed U shape is symmetrically distributed about the y axis of the geometric center of the second rectangular dielectric slab; the second upper metal coating 21 is etched with a rectangular coupling gap 211 at the bottom of the second metalized through holes 24 distributed in a gradually changed 'U' shape, and the geometric center of the rectangular coupling gap 211 is symmetrically distributed about the y axis of the geometric center of the second rectangular dielectric slab 22;
the geometric centers of the rectangular coupling slots 211 coincide with the center of the circular substrate integrated waveguide SIW resonant cavity formed by the first metalized through hole 13 along the z-axis direction, and are used for slot coupling feeding.
Referring to fig. 3, the first metallized through holes 13 form a substrate integrated waveguide SIW resonant cavity distributed in a circle, and the diameter D of the substrate integrated waveguide SIW resonant cavity is 12.96 mm; the diameter and the spacing of each metalized through hole are expressed according to the formula
Calculation of the diameter d of each metallized viav1mm, the distance between the centers of two adjacent metallized through holesv＝1.5mm。
The two parallel rectangular radiation slits 111 have a distance dx2.42 mm; the rectangular radiation slot 111 has a length Lx9.2mm, width Ly＝1mm。
Two parallel rectangular radiation gaps 111 are etched on the two sides of the center of the upper surfaces of the first metal cladding layer 11 and the first rectangular dielectric plate 12, the first metallized through hole 13 is used for forming a circular substrate integrated waveguide SIW resonant cavity, and the length, the width and the spacing distance of the two parallel rectangular radiation gaps 111 are adjusted, so that the cocurrent of the surface of the circular resonant cavity is effectively cut, and the radiation gain of the antenna is improved.
Referring to fig. 4, the diameter and the pitch of the second metalized through holes 24 with the gradually changed 'U' -shaped distribution are calculated according to the formula
Calculating, wherein the diameter d of each metalized through hole is 0.8mm, and the distance P between the centers of two adjacent metalized through holes is 1.2 mm; the opening direction of the second metalized through holes 24 distributed in the gradually changed U shape is along the distance m between the circle centers of two adjacent metalized through holes on the x axis1＝4.11mm。
The distance m between the bottom of the rectangular coupling gap 211 and the center of the bottom of the second metalized through hole 24 distributed in a gradually changed U shape is 0.75mm, and the length S of the rectangular coupling gap 211 isl3.8mm, width Sw＝0.3mm。
The rectangular coupling gap 211 is etched in the second upper metal coating 21, gap coupling feeding is achieved, impedance matching is improved and the bandwidth of the antenna is widened by adjusting the length and the width of the rectangular coupling gap 211 and the distance between the bottom of the rectangular coupling gap 211 and the circle center of the bottom of the second metalized through hole 24 distributed in the gradually-changed U shape.
Example 2
The structure of this example is the same as example 1, and only the following parameters were adjusted:
the first metallized through holes 13 form a substrate integrated waveguide SIW resonant cavity with the diameter D of 12.8mm in circular distribution; the distance d between the two parallel rectangular radiation slits 111x2.3mm, rectangular radiation slot 111 length Lx0.9mm, width Ly9 mm; the opening direction of the second metalized through holes 24 distributed in the gradually changed U shape is along the distance m between the circle centers of two adjacent metalized through holes on the x axis 14 mm; the distance m between the bottom of the rectangular coupling gap 211 and the center of the bottom of the second metalized through hole 24 distributed in a gradually changed U shape is 0.7mm, and the length of the rectangular coupling gap 211 is Sl3.7mm, width Sw＝0.25mm。
Example 3
The structure of this example is the same as example 1, and only the following parameters were adjusted:
the first metallized through holes 13 form a substrate integrated waveguide SIW resonant cavity with the diameter D of 13.2mm in circular distribution; the distance d between the two parallel rectangular radiation slits 111x2.5mm, rectangular radiation slot 111 length Lx1.1mm, width Ly9.4 mm; the opening direction of the second metalized through holes 24 distributed in the gradually changed U shape is along the distance m between the circle centers of two adjacent metalized through holes on the x axis14.2 mm; the distance m between the bottom of the rectangular coupling gap 211 and the center of the bottom of the second metalized through hole 24 distributed in a gradually changed U shape is 0.8mm, and the length of the rectangular coupling gap 211 is Sl3.9mm, width Sw＝0.35mm。
The technical effects of the present invention are further described below in conjunction with simulation tests:
1. simulation conditions and contents:
for the antenna structure of the invention, the performance of the antenna structure operating on the frequency band of 26GHz-40GHz is simulated.
The above-described embodiment antenna input return loss was subjected to simulation calculation using commercial simulation software HFSS _ 17.1.
The gain achievable by the antenna of the above embodiment was calculated by simulation using commercial simulation software HFSS _ 17.1.
The patterns of the 28GHz frequency point xoz plane and the yoz plane of the antenna of the embodiment are simulated and calculated by using commercial simulation software HFSS _ 17.1.
The patterns of the 38GHz frequency point xoz plane and the yoz plane of the antenna of the embodiment are simulated and calculated by commercial simulation software HFSS _ 17.1.
2. And (3) simulation result analysis:
referring to fig. 5, the abscissa represents the operating frequency of the antenna, and the ordinate represents the input return loss of the antenna. The relative bandwidth of the low-frequency point is 12%, the relative bandwidth of the high-frequency point is 3.3%, and compared with the prior art, the antenna effectively expands the bandwidth.
Referring to fig. 6, the abscissa represents the operating frequency of the antenna, and the ordinate represents the gain of the antenna in the + z-axis direction. The gain of 28GHz frequency points at low frequency is 8.6dB, and the gain of 38GHz frequency points at high frequency is 9.7dB, compared with the prior art, the antenna effectively improves the gain.
Referring to fig. 7, the dotted line shows the xoz plane antenna radiation pattern at 28GHz, and the solid line shows the yoz plane antenna radiation pattern at 28 GHz.
Referring to fig. 8, the dotted line indicates the xoz plane antenna radiation pattern at the frequency of 38GHz, and the solid line indicates the yoz plane antenna radiation pattern at the frequency of 38 GHz. As can be seen from fig. 7 and 8, both frequency points have highly directional radiation patterns.
Compared with the prior art, the simulation result shows that the antenna has double-frequency radiation performance, the working frequency bands of high frequency and low frequency are wide, and the gain in the working frequency band is strong; the antenna has high directivity from the perspective of the antenna radiation patterns of the 28GHz and 38GHz frequency points. The invention has simpler feed structure, higher antenna efficiency and gain and wider bandwidth.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can understand that the modifications or substitutions should be included in the scope of the present invention, and therefore, the scope of the present invention should be subject to the protection scope of the claims.
Claims (5)
1. A back cavity slot dual-frequency millimeter wave antenna based on a Substrate Integrated Waveguide (SIW) comprises a radiation layer (1), a feed layer (2) and a composite conversion structure (3), wherein the radiation layer (1) is composed of a first metal coating (11) and a first rectangular dielectric plate (12); the first metal coating (11) is printed on the upper surface of the first rectangular dielectric plate (12); the feed layer (2) comprises a second rectangular dielectric plate (22), a second upper metal coating (21) and a second lower metal coating (23); the composite conversion structure (3) is etched at the edge of the short side of the lower surface of the second lower metal coating (23) of the second rectangular dielectric plate (22), and is characterized in that:
the first rectangular dielectric plate (12) is provided with first metalized through holes (13) penetrating through the first metal coating (11) and the first rectangular dielectric plate (12), and the first metalized through holes (13) form a Substrate Integrated Waveguide (SIW) resonant cavity distributed in a circular shape; two parallel rectangular radiation gaps (111) are etched on two sides of the center of the upper surface of the first metal coating layer (11), and are symmetrically distributed on the xoz plane which is vertical to the first rectangular dielectric plate (12); the length, the width and the spacing distance of two rectangular radiation gaps (111) which are parallel to each other are adjusted, the cocurrent current on the surface of the circular resonant cavity is effectively cut, when the two rectangular radiation gaps which are parallel to each other cut the cocurrent current on the surface of the integrated waveguide of the circular substrate at the same time, and the rectangular coupling gap is utilized to feed the SIW resonant cavity of the integrated waveguide of the circular substrate, so that cocurrent radiation and gap coupling feed are formed;
one side of the short edge of the second rectangular dielectric slab (22) is provided with second metalized through holes (24) which penetrate through the second upper metal coating (21) and the second lower metal coating (23) and are distributed in a gradually changed U shape, and the geometric centers of the second metalized through holes (24) distributed in the gradually changed U shape are symmetrically distributed about the y axis of the geometric center of the second rectangular dielectric slab; the second upper metal coating (21) is etched with a rectangular coupling gap (211) at the bottom of a second metalized through hole (24) distributed in a gradually changed U shape, and the geometric center of the rectangular coupling gap (211) is symmetrically distributed about the y axis of the geometric center of the second rectangular dielectric plate (22);
the geometric centers of the rectangular coupling gaps (211) are overlapped with the center of a circular Substrate Integrated Waveguide (SIW) resonant cavity formed by the first metalized through hole (13) along the z-axis direction and used for gap coupling feeding.
2. The Substrate Integrated Waveguide (SIW) -based back cavity slot dual-frequency millimeter wave antenna according to claim 1, wherein the first metallized through holes (13) form a circularly distributed Substrate Integrated Waveguide (SIW) resonant cavity with a diameter D, wherein D is greater than or equal to 12.8mm and less than or equal to 13.2 mm; the diameter and the spacing of each metalized through hole are expressed according to the formula
Calculation of where dvFor each diameter of the metallized via, PvThe distance between the centers of two adjacent metallized through holes.
3. The Substrate Integrated Waveguide (SIW) -based cavity-backed slot dual-frequency millimeter wave antenna according to claim 1, wherein the distance d between the two parallel rectangular radiating slots (111) isxWherein d is not less than 2.3mmxLess than or equal to 2.5 mm; the length of the rectangular radiation slot (111) is LxA width of LyWherein L is more than or equal to 0.9mmx≤1.1mm；9mm≤Ly≤9.4mm。
4. The Substrate Integrated Waveguide (SIW) -based cavity-backed slot dual-frequency millimeter wave antenna according to claim 1, wherein the diameters and the pitches of the second metallized through holes (24) with the gradually changed U-shaped distribution are in accordance with the formula
Calculating, wherein d is the diameter of each metalized through hole, and P is the distance between the circle centers of two adjacent metalized through holes; the distance between the centers of the adjacent metallized through holes along the x axis in the opening direction of the second metallized through holes (24) distributed in the gradually-changed U shape is m1Wherein m is not less than 4mml≤4.2mm。
5. The SIW-based cavity-backed slot dual-frequency millimeter wave antenna according to claim 1, wherein the distance between the bottom of the rectangular coupling slot (211) and the center of the bottom of the second metallized through hole (24) with the gradually-changed U-shaped distribution is m, wherein m is greater than or equal to 0.7mm and less than or equal to 0.8mm, and the length of the rectangular coupling slot (211) is SlWidth of SwWherein S is not less than 3.7mml≤3.9mm；0.25mm≤Sw≤0.35mm。
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