CN215600567U - Broadband patch antenna with parasitic structure loaded - Google Patents
Broadband patch antenna with parasitic structure loaded Download PDFInfo
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- CN215600567U CN215600567U CN202121307633.9U CN202121307633U CN215600567U CN 215600567 U CN215600567 U CN 215600567U CN 202121307633 U CN202121307633 U CN 202121307633U CN 215600567 U CN215600567 U CN 215600567U
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Abstract
The utility model discloses a broadband patch antenna with a loaded parasitic structure, which comprises a metal ground, a dielectric substrate and a metal patch layer, wherein the metal ground, the dielectric substrate and the metal patch layer are sequentially arranged from bottom to top; the metal patch layer comprises a main radiation patch and a plurality of parasitic patches; the main radiation patch is printed in the center of the upper surface of the dielectric substrate and is electrically connected with the metal ground through a main feed conductor needle; a plurality of parasitic patches are printed on the upper surface of the dielectric substrate at the periphery of the main radiation patch in a surrounding manner in a shape of Chinese character 'kou'; each parasitic patch is electrically connected with the metal ground through a parasitic metal conductor; the parasitic metal conductor and the corresponding parasitic patch form a mushroom-type structure; the main radiating patch has a length and width greater than the length and width of each parasitic patch. The antenna can realize good impedance matching of low-frequency and high-frequency resonant frequencies, and further increase the impedance bandwidth of the antenna. In addition, the inductance characteristic of the antenna can be enhanced, and the current distribution on each patch is more uniform, so that the gain of the antenna is greatly improved.
Description
Technical Field
The utility model relates to a broadband high-gain antenna, in particular to a broadband patch antenna loaded with a parasitic structure.
Background
The miniaturized mobile terminal in the modern wireless communication system puts forward the requirement of miniaturization, integration and integration to the receiving and dispatching antenna, and simultaneously, the rapid development of wireless transmission and mobile network technology makes wireless data flow be explosive growth, and then puts forward higher requirement to the antenna performance. High-speed large-capacity data transmission needs to have enough bandwidth firstly, and available spectrum resources below an X band are very limited, so that spectrum resources of higher frequency bands need to be utilized. High-frequency electromagnetic waves have large loss in the free space propagation process, so that higher requirements are put on the gain of the antenna. In addition, in practical applications, besides high broadband gain, the antenna should have the advantages of low profile, low cost, easy processing, easy integration with other planar circuits, etc.
The microstrip patch antenna has the advantages of low profile, simple processing, low cost, easy conformation with other carrier surfaces, easy integration with a planar circuit and the like, and has good application prospect in the military field and the commercial field. However, the microstrip antenna has a relatively low profile and poor impedance matching performance, which results in a relatively narrow bandwidth of about 5%, and thus cannot meet the requirements of modern wireless communication. In order to meet the increasing requirements of wireless services, broadband, high-gain, low-profile microstrip antennas have important research values.
Aiming at the problem that the microstrip antenna has a narrow bandwidth, researchers have conducted a lot of research, and the traditional technical method for widening the microstrip antenna bandwidth is summarized as follows: increasing the thickness of the dielectric substrate, reducing the dielectric constant of the dielectric substrate, slotting on the patch, forming a U-shaped groove, forming an L-shaped probe, adopting a gap coupling feeding mode, short-circuit walls, parasitic strips, laminating the patch on a multilayer dielectric plate and the like. In recent years, with the introduction of new concepts such as metamaterials and super-surfaces, broadband antennas based on metamaterial structures and super-surface structures have become more and more diversified. However, the above conventional techniques still need to be improved in terms of bandwidth expansion and gain.
SUMMERY OF THE UTILITY MODEL
The present invention provides a broadband patch antenna loaded with a parasitic structure, which can realize good impedance matching of low-frequency and high-frequency resonant frequencies based on a conventional microstrip antenna, thereby greatly increasing the impedance bandwidth of the antenna. In addition, the inductance characteristic of the antenna can be enhanced, and the current distribution on each patch is more uniform, so that the gain of the antenna is greatly improved.
In order to solve the technical problems, the utility model adopts the technical scheme that:
a broadband patch antenna with a loaded parasitic structure comprises a metal ground, a dielectric substrate and a metal patch layer which are sequentially arranged from bottom to top.
The medium base plate is a rectangular plate and is printed on the lower surface of the medium base plate in a metal mode.
The metal patch layer comprises a main radiation patch and a plurality of parasitic patches.
The main radiation patch is coaxially printed in the center of the upper surface of the dielectric substrate, and is electrically connected with the metal ground through the main feed conductor pin.
A plurality of parasitic patches are printed on the upper surface of the dielectric substrate at the periphery of the main radiation patch in a surrounding manner in a shape of Chinese character 'kou'; each parasitic patch is electrically connected with a metal ground through a parasitic metal conductor; the parasitic metal conductors and the corresponding parasitic patches form a mushroom-type structure.
A main isolation gap is formed between each parasitic patch and the main radiating patch; and a parasitic isolation gap is formed between each two adjacent parasitic patches.
The main radiating patch and each parasitic patch are rectangular, the length of the main radiating patch is greater than that of each parasitic patch, and the width of the main radiating patch is greater than that of each parasitic patch.
The tip of the main feed conductor pin extends through the main radiating patch and acts as a 50 ohm feed port.
The main feed conductor pin is offset from the center of the main radiating patch.
The dielectric substrate is provided with a symmetry axis X parallel to the long side of the dielectric substrate; the main feed conductor pins are located adjacent to the short side of the main radiating patch and on the axis of symmetry X.
The long side of the main radiating patch is parallel to the long side of the dielectric substrate.
The parasitic patches include upper and lower parasitic patches and left and right parasitic patches.
The upper parasitic patch and the lower parasitic patch comprise an upper parasitic patch and a lower parasitic patch; the upper parasitic patch and the lower parasitic patch are symmetrically arranged above and below the main radiating patch; the long side edge of each upper parasitic patch and each lower parasitic patch is vertical to the long side edge of the main radiating patch;
the left and right parasitic patches comprise a left parasitic patch and a right parasitic patch; the left parasitic patch and the right parasitic patch are symmetrically arranged on the left side and the right side of the main radiating patch; the long side of each of the left and right parasitic patches is parallel to the long side of the main radiating patch.
The main isolation gap between each upper parasitic patch and each lower parasitic patch and the main radiation patch is an upper main isolation gap a and a lower main isolation gap a; the main isolation gaps between each left parasitic patch and each right parasitic patch and the main radiating patch are left main isolation gaps b and right main isolation gaps b, and a > b.
The parasitic isolation gaps between two adjacent upper parasitic patches or two adjacent lower parasitic patches are upper and lower parasitic isolation gaps c; and d is greater than c if the parasitic isolation gaps between two adjacent left parasitic patches or two adjacent right parasitic patches are left and right parasitic isolation gaps d.
The total number of the parasitic patches is 20, wherein the number of the upper parasitic patches and the number of the lower parasitic patches are respectively 3, and the length and the width of the upper parasitic patches are equal; the number of the left parasitic patch and the right parasitic patch is 7 respectively, and the length and the width of the left parasitic patch are equal.
The main feed conductor pin and each parasitic metal conductor are metal posts or metalized through holes penetrating through the dielectric substrate.
The diameter of each parasitic metal conductor is the same.
The utility model has the following beneficial effects:
1. the parasitic patch is loaded around the main radiating patch, wherein the main radiating patch can generate a low-frequency resonant frequency, the parasitic patch can introduce a new high-frequency resonant frequency, and the low-frequency resonant frequency and the high-frequency resonant frequency are close to each other by properly adjusting the size of the parasitic patch, so that good impedance matching can be realized between the two resonant frequencies. Therefore, the impedance bandwidth of the antenna will be greatly increased.
2. Parasitic paster and parasitic metal conductor form mushroom type structure, when the inductance characteristic of reinforcing antenna, can make the current distribution on each parasitic paster more even to improve the gain of antenna greatly.
Drawings
Fig. 1 shows a longitudinal cross-section of a broadband patch antenna loaded with a parasitic structure according to the utility model.
Fig. 2 shows a three-dimensional view of a broadband patch antenna loaded with parasitic structures of the present invention.
Fig. 3 shows a top view of a broadband patch antenna loaded with parasitic structures in accordance with the present invention.
Fig. 4 shows a plot of the standing wave ratio of a broadband patch antenna loaded with a parasitic structure according to the present invention.
Fig. 5 shows a gain profile of a broadband patch antenna loaded with a parasitic structure according to the present invention.
Fig. 6 shows the E-plane radiation pattern of a broadband patch antenna loaded with parasitic structures of the present invention.
Fig. 7 shows the H-plane radiation pattern of a broadband patch antenna loaded with parasitic structures of the present invention.
The figure shows that: upper and lower parasitic isolation gaps; 2. upper and lower parasitic patches; 3. an upper and lower main isolation gap; 4. a left and right parasitic isolation gap; 5. a main feed conductor pin; 6. left and right parasitic patches; 7. a primary radiating patch; 8. a parasitic metal conductor; 9. a left and right main isolation gap; 10. a metal ground; 11. a dielectric substrate; 12. and a metal patch layer.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific preferred embodiments.
In the description of the present invention, it is to be understood that the terms "left side", "right side", "upper part", "lower part", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and that "first", "second", etc., do not represent an important degree of the component parts, and thus are not to be construed as limiting the present invention. The specific dimensions used in the present example are only for illustrating the technical solution and do not limit the scope of protection of the present invention.
As shown in fig. 1, fig. 2 and fig. 3, a broadband patch antenna with a loading parasitic structure includes a metal ground 10, a dielectric substrate 11 and a metal patch layer 12, which are sequentially arranged from bottom to top.
The dielectric substrate is a rectangular plate and has a symmetry axis X parallel to the long side of the dielectric substrate.
Is printed metallically on the lower surface of the dielectric substrate.
As shown in fig. 2 and 3, the metal patch layer includes a main radiation patch 7 and a plurality of parasitic patches.
The main radiation patch is coaxially printed in the center of the upper surface of the dielectric substrate, and the main radiation patch is rectangular and parallel to the long side of the dielectric substrate.
The main radiating patch is electrically connected to metal ground through a main feed conductor pin 5. The main feed conductor needle is vertically arranged in the dielectric substrate, and the top end of the main feed conductor needle penetrates through the main radiation patch and serves as a 50 ohm feed port. When the antenna is specifically designed, the distance between the main feed conductor needle and the center of the main radiation patch is adjusted, so that the antenna has the input impedance characteristic of 50 ohms at the corresponding working frequency.
The main feed conductor pin is preferably offset from the center of the main radiating patch (i.e. the center of the dielectric substrate), and further the main feed conductor pin is located adjacent to the short side of the main radiating patch and on the symmetry axis X.
A plurality of parasitic patches are printed on the upper surface of the dielectric substrate at the periphery of the main radiation patch in a surrounding manner in a shape of Chinese character 'kou'; each parasitic patch is electrically connected to the metal ground through a parasitic metal conductor 8.
The parasitic metal conductor and the corresponding parasitic patch form a mushroom-type structure, that is, the parasitic metal conductor is located on the central axis of the corresponding parasitic patch. The mushroom-shaped structure can enhance the inductance characteristic of the antenna and simultaneously enable the current distribution on each parasitic patch to be more uniform, thereby greatly improving the gain of the antenna.
Furthermore, the diameter of each parasitic metal conductor is the same, and the top end of each parasitic metal conductor penetrates through the center of the corresponding parasitic patch.
Further, the main feed conductor pin and each parasitic metal conductor are preferably a metal post or a metalized via or the like penetrating the dielectric substrate.
A main isolation gap is formed between each parasitic patch and the main radiating patch; and a parasitic isolation gap is formed between each two adjacent parasitic patches.
Furthermore, each parasitic patch is rectangular, the length of the main radiating patch is greater than that of each parasitic patch, and the width of the main radiating patch is greater than that of each parasitic patch. The main radiation patch can generate a low-frequency resonant frequency, the parasitic patch can introduce a new high-frequency resonant frequency, and the low-frequency resonant frequency and the high-frequency resonant frequency are close to each other by properly adjusting the size of the parasitic patch, so that good impedance matching can be realized between the two resonant frequencies. Therefore, the impedance bandwidth of the antenna will be greatly increased.
The parasitic patches include upper and lower parasitic patches 2 and left and right parasitic patches 6, and in this embodiment, the total number of the parasitic patches is 20, where the number of the upper and lower parasitic patches is 6, and the number of the left and right parasitic patches is 14.
The upper parasitic patch and the lower parasitic patch comprise an upper parasitic patch and a lower parasitic patch; the upper parasitic patch and the lower parasitic patch are preferably 3 respectively and symmetrically arranged above and below the main radiating patch; the long side edge of each upper parasitic patch and each lower parasitic patch is vertical to the long side edge of the main radiating patch; .
The left and right parasitic patches comprise a left parasitic patch and a right parasitic patch; the number of the left parasitic patch and the right parasitic patch is preferably 7 respectively, and the left parasitic patch and the right parasitic patch are symmetrically arranged on the left side and the right side of the main radiation patch; the long side of each of the left and right parasitic patches is parallel to the long side of the main radiating patch.
The main isolation gaps between each upper parasitic patch and each lower parasitic patch and the main radiating patch are upper main isolation gaps 3 and lower main isolation gaps 3 which are equal and are a; the main isolation gaps between each left parasitic patch and each right parasitic patch and the main radiating patch are left main isolation gaps 9 and right main isolation gaps 9 which are equal and are b, and then a is larger than b.
The parasitic isolation gaps between two adjacent upper parasitic patches or two adjacent lower parasitic patches are upper and lower parasitic isolation gaps 1 which are equal and are c; and the parasitic isolation gaps between two adjacent left parasitic patches or two adjacent right parasitic patches are left and right parasitic isolation gaps 4 which are equal and d, and then c > d.
The total number of the parasitic patches is 20, wherein the number of the upper parasitic patches and the number of the lower parasitic patches are respectively 3, and the length and the width of the upper parasitic patches are equal; the number of the left parasitic patch and the right parasitic patch is 7 respectively, and the length and the width of the left parasitic patch are equal.
As shown in fig. 4 to 7, the bandwidth (return loss less than-10 dB) of the wideband patch antenna of the present invention ranges from 12.5 GHz to 17.8 GHz, and the relative bandwidth is about 35.3%, which is much larger than the bandwidth of the conventional microstrip antenna, and meanwhile, the gain in the bandwidth range is mostly above 8.4 dBi, which has an obvious high gain characteristic.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the embodiments, and various equivalent modifications can be made within the technical spirit of the present invention, and the scope of the present invention is also within the scope of the present invention.
Claims (10)
1. A broadband patch antenna loaded with a parasitic structure is characterized in that: the metal ground, the dielectric substrate and the metal patch layer are sequentially arranged from bottom to top;
the medium substrate is a rectangular plate and is printed on the lower surface of the medium substrate in a metal mode;
the metal patch layer comprises a main radiation patch and a plurality of parasitic patches;
the main radiation patch is coaxially printed in the center of the upper surface of the dielectric substrate, and is electrically connected with a metal ground through a main feed conductor needle;
a plurality of parasitic patches are printed on the upper surface of the dielectric substrate at the periphery of the main radiation patch in a surrounding manner in a shape of Chinese character 'kou'; each parasitic patch is electrically connected with a metal ground through a parasitic metal conductor; the parasitic metal conductor and the corresponding parasitic patch form a mushroom-type structure;
a main isolation gap is formed between each parasitic patch and the main radiating patch; a parasitic isolation gap is formed between each two adjacent parasitic patches;
the main radiating patch and each parasitic patch are rectangular, the length of the main radiating patch is greater than that of each parasitic patch, and the width of the main radiating patch is greater than that of each parasitic patch.
2. The parasitic structure-loaded wideband patch antenna of claim 1, wherein: the tip of the main feed conductor pin extends through the main radiating patch and acts as a 50 ohm feed port.
3. The parasitic structure-loaded wideband patch antenna of claim 1 or 2, wherein: the main feed conductor pin is offset from the center of the main radiating patch.
4. The parasitic structure-loaded wideband patch antenna of claim 3, wherein: the dielectric substrate is provided with a symmetry axis X parallel to the long side of the dielectric substrate; the main feed conductor pins are located adjacent to the short side of the main radiating patch and on the axis of symmetry X.
5. The parasitic structure-loaded wideband patch antenna of claim 1, wherein: the long side edge of the main radiation patch is parallel to the long side edge of the medium substrate;
the parasitic patches comprise an upper parasitic patch, a lower parasitic patch, a left parasitic patch and a right parasitic patch;
the upper parasitic patch and the lower parasitic patch comprise an upper parasitic patch and a lower parasitic patch; the upper parasitic patch and the lower parasitic patch are symmetrically arranged above and below the main radiating patch; the long side edge of each upper parasitic patch and each lower parasitic patch is vertical to the long side edge of the main radiating patch;
the left and right parasitic patches comprise a left parasitic patch and a right parasitic patch; the left parasitic patch and the right parasitic patch are symmetrically arranged on the left side and the right side of the main radiating patch; the long side of each of the left and right parasitic patches is parallel to the long side of the main radiating patch.
6. The parasitic structure-loaded wideband patch antenna of claim 5, wherein: the main isolation gap between each upper parasitic patch and each lower parasitic patch and the main radiation patch is an upper main isolation gap a and a lower main isolation gap a; the main isolation gaps between each left parasitic patch and each right parasitic patch and the main radiating patch are left main isolation gaps b and right main isolation gaps b, and a > b.
7. The parasitic structure-loaded wideband patch antenna of claim 5, wherein: the parasitic isolation gaps between two adjacent upper parasitic patches or two adjacent lower parasitic patches are upper and lower parasitic isolation gaps c; and d is greater than c if the parasitic isolation gaps between two adjacent left parasitic patches or two adjacent right parasitic patches are left and right parasitic isolation gaps d.
8. The parasitic structure-loaded wideband patch antenna of claim 5, wherein: the total number of the parasitic patches is 20, wherein the number of the upper parasitic patches and the number of the lower parasitic patches are respectively 3, and the length and the width of the upper parasitic patches are equal; the number of the left parasitic patch and the right parasitic patch is 7 respectively, and the length and the width of the left parasitic patch are equal.
9. The parasitic structure-loaded wideband patch antenna of claim 1, wherein: the main feed conductor pin and each parasitic metal conductor are metal posts or metalized through holes penetrating through the dielectric substrate.
10. The parasitic structure-loaded wideband patch antenna of claim 1, wherein: the diameter of each parasitic metal conductor is the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202121307633.9U CN215600567U (en) | 2021-06-11 | 2021-06-11 | Broadband patch antenna with parasitic structure loaded |
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| CN202121307633.9U CN215600567U (en) | 2021-06-11 | 2021-06-11 | Broadband patch antenna with parasitic structure loaded |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115000695A (en) * | 2022-07-07 | 2022-09-02 | 华南理工大学 | Ultra-wideband high-gain patch antenna without reflective back cavity |
| CN115458932A (en) * | 2022-11-10 | 2022-12-09 | 南京信息工程大学 | Miniaturized flexible wearable antenna capable of improving high-order mode radiation characteristics |
| WO2023221601A1 (en) * | 2022-05-19 | 2023-11-23 | 华为技术有限公司 | Antenna and electronic device |
| WO2024022224A1 (en) * | 2022-07-29 | 2024-02-01 | 华为技术有限公司 | Antenna, sensing module, sensor, and electronic device |
-
2021
- 2021-06-11 CN CN202121307633.9U patent/CN215600567U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023221601A1 (en) * | 2022-05-19 | 2023-11-23 | 华为技术有限公司 | Antenna and electronic device |
| CN115000695A (en) * | 2022-07-07 | 2022-09-02 | 华南理工大学 | Ultra-wideband high-gain patch antenna without reflective back cavity |
| WO2024022224A1 (en) * | 2022-07-29 | 2024-02-01 | 华为技术有限公司 | Antenna, sensing module, sensor, and electronic device |
| CN115458932A (en) * | 2022-11-10 | 2022-12-09 | 南京信息工程大学 | Miniaturized flexible wearable antenna capable of improving high-order mode radiation characteristics |
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