CN216120753U

CN216120753U - High-isolation dual-polarization laminated microstrip patch antenna

Info

Publication number: CN216120753U
Application number: CN202122716039.1U
Authority: CN
Inventors: 方玉林; 张跃平
Original assignee: Shanghai Jiaotong University
Current assignee: Shanghai Jiaotong University
Priority date: 2021-11-08
Filing date: 2021-11-08
Publication date: 2022-03-22
Anticipated expiration: 2031-11-08

Abstract

A high isolation dual polarized stacked microstrip patch antenna comprising: the three-layer medium base plate that sets gradually and be located the metal stratum of first medium base plate outside, wherein: the second dielectric substrate is provided with a crossed microstrip line for adjusting polarization isolation of the dual-polarized antenna and reducing cross polarization, the corresponding position of the first dielectric substrate is provided with a metalized via hole and an antenna interface, and two sides of the third dielectric substrate are respectively provided with a driving patch and a parasitic patch. The device improves the polarization isolation degree of the antenna and reduces the cross polarization of a directional diagram of the antenna by utilizing the adjusting characteristic of the short-circuit cross microstrip line.

Description

High-isolation dual-polarization laminated microstrip patch antenna

Technical Field

The utility model relates to a technology in the field of wireless antennas, in particular to a dual-polarized laminated microstrip patch antenna with polarization isolation degree reaching 48dB at most.

Background

Dual-polarized patch antennas are attractive in modern communication systems because they double the capacity of the communication system by multiplexing frequency bands and provide polarization diversity to reduce the negative effects of multipath fading of the received signal. The stacked microstrip patch antenna has a wide impedance bandwidth, a wide beam width, polarization flexibility and filter characteristics, which dominate antenna array designs for 5G base stations, client devices and smart phones. In the existing dual-polarized laminated microstrip patch antenna design, aperture coupling feed is mostly adopted or differential feed is carried out by utilizing four ports. For aperture-coupled feeding, in order to obtain higher polarization isolation, the antenna usually has a complex feeding structure, and the aperture-coupled feeding also has a certain influence on the directional pattern of the antenna. For the differential feeding of the four-port two-pair differential port, the coaxial probe or the L-shaped probe is usually used for feeding, and the differential feeding of the two-pair differential port also makes the antenna have a complicated feeding structure.

SUMMERY OF THE UTILITY MODEL

Aiming at the defects in the prior art, the utility model provides a high-isolation dual-polarization laminated microstrip patch antenna, which improves the polarization isolation of the antenna and reduces the cross polarization of a directional diagram of the antenna by utilizing the adjusting characteristic of a short-circuit cross microstrip line.

The utility model is realized by the following technical scheme:

the utility model comprises the following steps: the three-layer medium base plate that sets gradually and be located the metal stratum of first medium base plate outside, wherein: the second dielectric substrate is provided with a crossed microstrip line for adjusting polarization isolation of the dual-polarized antenna and reducing cross polarization, the corresponding position of the first dielectric substrate is provided with a metalized via hole and an antenna interface, and two sides of the third dielectric substrate are respectively provided with a driving patch and a parasitic patch.

The metal stratum is a single integral metal.

The driving patch and the driving patch are both of square structures.

The metalized via holes penetrate through the first dielectric substrate to short circuit four end points of the crossed microstrip line structure, so that the polarization isolation degree of the dual-polarized antenna is adjusted, and the cross polarization of the dual-polarized antenna is reduced.

Drawings

FIG. 1 is a schematic view of the present invention;

FIG. 2 is a S parameter simulation result;

FIG. 3 is a simulation result of S-parameter with different bottom dielectric thicknesses;

FIG. 4 is a directional pattern of the antenna at 3.3GHz when only one port is excited;

FIG. 5 is a directional pattern of the antenna at 3.5GHz when only one port is excited;

FIG. 6 is a directional pattern of the antenna at 3.7GHz when only one port is excited;

FIG. 7 is a graph of the gain of the antenna when only one port is excited;

in the figure: the antenna comprises a metal ground layer 1,

dielectric substrates

2, 3 and 4, a driving patch 5, a parasitic patch 6, a crossed microstrip line 7, a metalized via hole 8 and an antenna interface 9.

Detailed Description

As shown in fig. 1, the present embodiment relates to a high-isolation dual-polarized stacked microstrip patch antenna, the designed antenna array has a center frequency of 3.5GHz, and the antenna includes: three layers of

medium substrates

2, 3, 4 arranged in sequence and a metal ground layer 1 positioned at the outer side of the first medium substrate 2, wherein: the second dielectric substrate 3 is provided with a crossed microstrip line 7, the corresponding position of the first dielectric substrate 1 is provided with a metalized via hole 8 and an antenna interface 9, and two sides of the third dielectric substrate 4 are respectively provided with a driving patch 5 and a parasitic patch 6.

The dielectric constant of the first to third dielectric plates 2 to 4 is 2.2, and the loss tangent is Rogers RT/duroid 5880 of 0.009.

The first dielectric plate 2 has the size of 90 multiplied by 1.35mm³。

The line width of the crossed microstrip line 7 is 4.5mm, and the line length is 30mm, and four end points of the crossed microstrip line 7 are short-circuited by four metalized through holes 8 with the radius of 2 mm.

And four end points of the crossed microstrip line 7 are respectively provided with a bonding pad.

The size of the second medium plate 3 is 90 multiplied by 1.65mm³。

The driving patch 5 is 25.5mm by 25.5mm²For radiating electromagnetic waves and providing coupling for the upper parasitic patch 6.

The third dielectric plate 3 has the size of 90 multiplied by 3mm³。

The parasitic patch 6 is 24.8mm by 24.8mm²For radiating electromagnetic waves.

The antenna interface 9 includes: two coaxial feed ports orthogonal to each other at a position 9mm from the center, which feed through the first dielectric substrate 2 to the driving patch 5.

As shown in fig. 2, a simulation result of S parameters of the dual-polarized stacked microstrip patch antenna shows that the antenna has a simulated impedance bandwidth of 12.3% and 3.29-3.72 GHz. The polarization isolation of a dual-polarized antenna in the operating band is up to 48dB maximum and the isolation is higher than 30dB over the entire bandwidth. As shown in fig. 3, which is a variation of the S parameter of the antenna with the thickness of the first dielectric plate 2, it can be seen that the thickness of the first dielectric plate 2 can affect the adjustment of the polarization isolation of the antenna without changing the reflection coefficient of the antenna.

As shown in fig. 4 to 6, the simulation results of the directional patterns when one port of the antenna is excited and the other port is connected with the matching load show that the directional patterns of the E-plane and the H-plane of the antenna have good symmetry, which indicates that the crossed microstrip structure has little influence on the main polarization directional pattern of the antenna. In addition, the cross polarization of the antenna is very low from 3.3 to 3.7 GHz. E-plane cross polarization is less than-30 dB, and H-plane cross polarization is less than-25 dB.

As shown in fig. 7, simulation results of antenna gain when one port of the antenna is excited and the other port is connected to a matched load. As shown in the figure, the antenna has higher gain within 3.3-3.7 GHz.

The foregoing embodiments may be modified in many different ways by those skilled in the art without departing from the spirit and scope of the utility model, which is defined by the appended claims and all changes that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims

1. A high isolation dual polarized stacked microstrip patch antenna, comprising: the three-layer medium base plate that sets gradually and be located the metal stratum of first medium base plate outside, wherein: the second dielectric substrate is provided with a crossed microstrip line for adjusting polarization isolation of the dual-polarized antenna and reducing cross polarization, the corresponding position of the first dielectric substrate is provided with a metalized via hole and an antenna interface, and two sides of the third dielectric substrate are respectively provided with a driving patch and a parasitic patch.

2. The high isolation dual polarized stacked microstrip patch antenna according to claim 1 wherein said metal ground layer is a single integral piece of metal.

3. The high-isolation dual-polarization stacked microstrip patch antenna according to claim 1, wherein said driving patch and said driving patch are both square structures.

4. The high isolation dual polarized stacked microstrip patch antenna according to claim 1 wherein said metallized vias extend through said first dielectric substrate to short circuit four ends of said crossed microstrip line structure, thereby adjusting polarization isolation of said dual polarized antenna and reducing cross polarization of said dual polarized antenna.