CN108807420B - 一种柔性显示基板及其制作方法、可折叠显示装置 - Google Patents

一种柔性显示基板及其制作方法、可折叠显示装置 Download PDF

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CN108807420B
CN108807420B CN201810570011.1A CN201810570011A CN108807420B CN 108807420 B CN108807420 B CN 108807420B CN 201810570011 A CN201810570011 A CN 201810570011A CN 108807420 B CN108807420 B CN 108807420B
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thin film
display substrate
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flexible display
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CN108807420A (zh
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田雪雁
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BOE Technology Group Co Ltd
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Priority to US16/607,186 priority patent/US10985214B2/en
Priority to PCT/CN2019/085843 priority patent/WO2019233230A1/zh
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Abstract

本发明公开了一种柔性显示基板及其制作方法、可折叠显示装置,以提高柔性显示基板的柔韧性以及抗弯折性,从而在保证可折叠显示装置的器件电学性能的同时延长可折叠显示装置的使用寿命。柔性显示基板包括:对应可折叠显示装置的非折叠区的第一区域和对应可折叠显示装置的折叠区的第二区域,第一区域包括多个第一像素单元,第一像素单元包括多晶硅薄膜晶体管;第二区域包括多个第二像素单元,第二像素单元包括有机薄膜晶体管。

Description

一种柔性显示基板及其制作方法、可折叠显示装置
技术领域
本发明涉及显示技术领域,特别是涉及一种柔性显示基板及其制作方法、可折叠显示装置。
背景技术
LTPS TFT-LCD(Low Temperature Poly-Silicon Thin Film Transistor-LiquidCrystal Display,低温多晶硅薄膜晶体管液晶显示器)具有高分辨率、反应速度快、高亮度、高开口率等优点,并且LTPS TFT-LCD的硅结晶排列较a-Si(非晶硅)有次序,这使得其电子迁移率相对高100倍以上,并且其在制作过程中可以将外围的驱动电路同时制作在玻璃基板上,从而达到系统整合、节省空间以及节约驱动IC(Integrated Circuit,集成电路)的成本的目标。
同时,由LTPS TFT-LCD衍生的LTPS-AMOLED(Low Temperature Poly-SiliconActive-matrix organic light emitting diode,低温多晶硅有源矩阵有机发光二极体)凭据高画质、移动图像响应时间短、低功耗、宽视角及超轻薄等优点,也成为了未来显示技术最好的选择。
目前,随着智能手机、可穿戴设备、车载显示、AR/VR等搭载柔性显示屏的电子产品快速发展和普及,人们在对显示设备的柔性显示屏的加大提出了强烈需求的同时,还希望具有大屏幕的显示设备能够实现可折叠、携带方便的特性。
现有技术存在的缺陷在于,柔性显示屏在弯曲后会产生应力,从而无法克服多次弯折后造成的柔性显示屏内部器件电学性能衰退的问题。
发明内容
本发明实施例的目的是提供一种柔性显示基板及其制作方法、可折叠显示装置,以提高柔性显示基板的柔韧性以及抗弯折性,从而在保证可折叠显示装置的器件电学性能的同时延长可折叠显示装置的使用寿命。
本发明实施例提供一种柔性显示基板,包括对应可折叠显示装置的非折叠区的第一区域和对应可折叠显示装置的折叠区的第二区域:
所述第一区域包括多个第一像素单元,所述第一像素单元包括多晶硅薄膜晶体管;所述第二区域包括多个第二像素单元,所述第二像素单元包括有机薄膜晶体管。
本技术方案的柔性显示基板,将与可折叠显示装置的非折叠区对应的第一区域以及与折叠区对应的第二区域分开制作。其中,与非折叠区对应的区域的像素单元包括多晶硅薄膜晶体管,与折叠区对应的区域的像素单元包括有机薄膜晶体管。这样有效的提高了对应显示装置的折叠区的显示基板的柔韧性以及抗弯折特性,从而提高了包括该柔性显示基板的可折叠显示装置的使用寿命。
优选的,所述柔性显示基板还包括设置于所述第一区域且位于所述显示基板的非显示区域的驱动电路,所述驱动电路与所述多晶硅薄膜晶体管以及所述有机薄膜晶体管连接。
在本技术方案中,将驱动电路设置于对应可折叠显示装置的非折叠区,可以在柔性显示基板折叠的过程中使驱动电路始终不发生弯折,从而有效的降低了柔性显示基板的器件电学特性下降的风险,进而降低对柔性显示基板的显示效果的影响。
可选的,所述第一区域为两个,所述第二区域为一个且位于两个所述第一区域之间。
当第一区域为两个时,柔性显示基板可以应用于只需要实现对折的可折叠显示装置。此时的驱动电路设置于两个第一区域。
可选的,所述第一区域的数量大于两个,相邻两个所述第一区域之间设置有一个所述第二区域,所述驱动电路位于靠近所述显示基板侧边的所述第一区域。
当第一区域的数量大于两个时,第二区域设置于每相邻的两个第一区域之间,驱动电路设置于靠近显示基板边侧的第一区域。包括该柔性显示基板的可折叠显示装置可以实现多重折叠,因此可以将可折叠显示装置的尺寸做的较大。
具体的,所述驱动电路包括非晶硅晶体管。
基于相同的发明构思,本发明实施例还提供一种可折叠显示装置,包括如前所述的柔性显示基板。
本技术方案的可折叠显示装置的显示基板的柔韧性以及抗弯折特性较好,从而使该可折叠显示装置具有较长的使用寿命。
基于相同的发明构思,本发明实施例还提供一种柔性显示基板的制作方法,柔性显示基板包括对应可折叠显示装置的非折叠区的第一区域和对应可折叠显示装置的折叠区的第二区域,所述方法包括:
在第一区域形成多个多晶硅薄膜晶体管;
在第二区域形成多个有机薄膜晶体管。
在本技术方案的柔性显示基板的制作方法中,将与可折叠显示装置的非折叠区对应的第一区域以及与折叠区对应的第二区域分开制作。其中,在与非折叠区对应的区域形成多晶硅薄膜晶体管,与折叠区对应的区域形成有机薄膜晶体管。这样的制作方法有效的提高了对应可折叠显示装置的折叠区的显示基板的柔韧性以及抗弯折特性,从而提高了包括该柔性显示基板的可折叠显示装置的使用寿命。
优选的,所述制作方法还包括:在对应柔性显示基板的非显示区域的第一区域形成驱动电路的非晶硅晶体管。
在本技术方案中,将驱动电路形成于对应可折叠显示装置的非折叠区,可以在柔性显示基板折叠的过程中使驱动电路始终不发生弯折,从而有效的降低了柔性显示基板的器件电学特性下降的风险,进而降低对柔性显示基板的显示效果的影响。
较佳的,所述在第一区域形成多个多晶硅薄膜晶体管,包括:
在第一区域形成多个多晶硅薄膜晶体管的有源层;
在第二区域形成多个有机薄膜晶体管的有源层;
在形成有机薄膜晶体管的有源层的第二区域形成遮挡层;
对第一区域的多晶硅薄膜晶体管的有源层进行离子注入处理;
剥离第二区域的遮挡层。
本柔性显示基板的制作方法中,由于不需要对第二区域的有源层进行离子的注入,因此在将离子注入第一区域的多晶硅薄膜晶体管的有源层前,将形成有机薄膜晶体管的有源层的第二区域进行遮挡,这样可以有效的避免离子注入的浪费。
优选的,所述在第一区域形成多个多晶硅薄膜晶体管,还包括:
对第一区域的多晶硅薄膜晶体管的有源层进行退火处理。
采用本技术方案的柔性显示基板的制作方法,只需要对对应可折叠显示装置的非折叠区的第一区域的多晶硅薄膜晶体管的有源层进行退火处理。当退火处理为激光退火处理时,还能够有效的减少极光资源,从而降低生产成本。
附图说明
图1为本发明一实施例的柔性显示基板的结构示意图;
图2为本发明另一实施例的柔性显示基板的结构示意;
图3为本发明又一实施例的柔性显示基板的结构示意;
图4为本发明实施例的柔性显示基板的制作方法流程图。
附图标记:
1-柔性显示基板;
2-第一区域;
3-第二区域;
4-驱动电路。
具体实施方式
为提高柔性显示基板的柔韧性以及抗弯折性,从而在保证可折叠显示装置的器件电学性能的同时延长可折叠显示装置的使用寿命,本发明实施例提供了一种柔性显示基板及其制作方法、可折叠显示装置。为使本发明的目的、技术方案和优点更加清楚,以下举实施例对本发明作进一步详细说明。
如图1至图3所示,其中,本发明实施例提供的柔性显示基板1,包括对应可折叠显示装置的非折叠区的第一区域2和对应可折叠显示装置的折叠区的第二区域3:
第一区域2包括多个第一像素单元,第一像素单元包括多晶硅薄膜晶体管;第二区域3包括多个第二像素单元,第二像素单元包括有机薄膜晶体管。
本技术方案的柔性显示基板1,将与可折叠显示装置的非折叠区对应的第一区域2以及与折叠区对应的第二区域3分开制作。其中,与非折叠区对应的区域的像素单元包括多晶硅薄膜晶体管,与折叠区对应的区域的像素单元包括有机薄膜晶体管。这样有效的提高了对应显示装置的折叠区的显示基板的柔韧性以及抗弯折特性,从而提高了包括该柔性显示基板1的可折叠显示装置的使用寿命。
值得一提的是,在本技术方案中,为了有效的减小第一区域2和第二区域3之间的显示差异,可以采用标准外部补偿的方式进行显示补偿。
如图1至图3所示,在本发明优选的实施例中,柔性显示基板1还包括设置于第一区域2且位于显示基板的非显示区域的驱动电路4,驱动电路4与多晶硅薄膜晶体管以及有机薄膜晶体管连接。具体的,驱动电路4包括非晶硅晶体管。
在本技术方案中,将驱动电路4设置于对应可折叠显示装置的非折叠区,可以在柔性显示基板1折叠的过程中使驱动电路4始终不发生弯折,从而有效的降低了柔性显示基板1的器件电学特性下降的风险,进而降低对柔性显示基板1的显示效果的影响。
如图1所示,在本发明一可选的实施例中,第一区域2为两个,第二区域3为一个且位于两个第一区域2之间。
当第一区域2为两个时,柔性显示基板1可以应用于只需要实现对折的可折叠显示装置。此时的驱动电路4设置于两个第一区域2。
如图2和图3所示,在本发明另一可选的实施例中,第一区域2的数量大于两个,相邻两个第一区域2之间设置有一个第二区域3,驱动电路4位于靠近显示基板侧边的第一区域2。
当第一区域2的数量大于两个时,第二区域3设置于每相邻的两个第一区域2之间,驱动电路4设置于靠近显示基板边侧的第一区域2。包括该柔性显示基板1的可折叠显示装置可以实现多重折叠,因此可以将可折叠显示装置的尺寸做的较大。
基于相同的发明构思,本发明实施例还提供一种可折叠显示装置,包括如前所述的柔性显示基板。
本技术方案的可折叠显示装置的显示基板的柔韧性以及抗弯折特性较好,从而使该可折叠显示装置具有较长的使用寿命。
如图4所示,基于相同的发明构思,本发明实施例还提供一种柔性显示基板的制作方法,柔性显示基板包括对应可折叠显示装置的非折叠区的第一区域和对应可折叠显示装置的折叠区的第二区域,所述制作方法包括:
步骤001:在第一区域形成多个多晶硅薄膜晶体管;
步骤002:在第二区域形成多个有机薄膜晶体管。
在本技术方案的柔性显示基板的制作方法中,将与可折叠显示装置的非折叠区对应的第一区域以及与折叠区对应的第二区域分开制作。其中,在与非折叠区对应的区域的形成多晶硅薄膜晶体管,与折叠区对应的区域形成有机薄膜晶体管。这样的制作方法有效的提高了对应可折叠显示装置的折叠区的显示基板的柔韧性以及抗弯折特性,从而提高了包括该柔性显示基板的可折叠显示装置的使用寿命。
在本发明优选的实施例中,所述制作方法还包括:在对应柔性显示基板的非显示区域的第一区域形成驱动电路的非晶硅晶体管。
在本技术方案中,将驱动电路形成于对应可折叠显示装置的非折叠区,可以在柔性显示基板折叠的过程中使驱动电路始终不发生弯折,从而有效的降低了柔性显示基板的器件电学特性下降的风险,进而降低对柔性显示基板的显示效果的影响。
在本发明较佳的实施例中,在第一区域形成多个多晶硅薄膜晶体管,包括:
在第一区域形成多个多晶硅薄膜晶体管的有源层;
在第二区域形成多个有机薄膜晶体管的有源层;
在形成有机薄膜晶体管的有源层的第二区域形成遮挡层;
对第一区域的多晶硅薄膜晶体管的有源层进行离子注入处理;
剥离第二区域的遮挡层。
在第一区域形成多晶硅薄膜晶体管的有源层之后,可以通过真空蒸发的方法沉积有机薄膜;在第二区域形成有机薄膜晶体管的有源层之后,可以通过真空蒸发的方法沉积有机薄膜,当对于像素要求不高的产品,也可以通过喷墨打印的方法沉积有机薄膜。
在本技术方案的柔性显示基板的制作方法中,由于不需要对第二区域的有源层进行离子的注入,因此在将离子注入第一区域的多晶硅薄膜晶体管的有源层前,将形成有机薄膜晶体管的有源层的第二区域进行遮挡,这样可以有效的避免离子注入的浪费。其中,遮挡层可以为光刻胶。
在本发明优选的实施例中,在第一区域形成多个多晶硅薄膜晶体管,还包括:
对第一区域的多晶硅薄膜晶体管的有源层进行退火处理。
采用本技术方案的柔性显示基板的制作方法,只需要对对应可折叠显示装置的非折叠区的第一区域的多晶硅薄膜晶体管的有源层进行退火处理。其中,退火处理可以采用准分子激光退火处理,这样可以有效的减少极光资源的使用,从而降低生产成本。
显示装置的具体类型不限,例如可以为可折叠的手机、笔记本电脑、电子书以及平板电脑等等。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种柔性显示基板,包括对应可折叠显示装置的非折叠区的第一区域和对应可折叠显示装置的折叠区的第二区域,其特征在于:
所述第一区域包括多个第一像素单元,所述第一像素单元包括多晶硅薄膜晶体管;所述第二区域包括多个第二像素单元,所述第二像素单元包括有机薄膜晶体管;
当所述第一区域的数量为多个时,相邻两个所述第一区域之间设置有一个所述第二区域;
所述第二区域贯穿所述柔性显示基板相对的两侧。
2.如权利要求1所述的显示基板,其特征在于,还包括设置于所述第一区域且位于所述显示基板的非显示区域的驱动电路,所述驱动电路与所述多晶硅薄膜晶体管以及所述有机薄膜晶体管连接。
3.如权利要求2所述的显示基板,其特征在于,所述第一区域为两个,所述第二区域为一个且位于两个所述第一区域之间。
4.如权利要求2所述的显示基板,其特征在于,所述第一区域的数量大于两个,相邻两个所述第一区域之间设置有一个所述第二区域,所述驱动电路位于靠近所述显示基板侧边的所述第一区域。
5.如权利要求2所述的显示基板,其特征在于,所述驱动电路包括非晶硅晶体管。
6.一种可折叠显示装置,其特征在于,包括如权利要求1~5任一项所述的柔性显示基板。
7.一种柔性显示基板的制作方法,其特征在于,柔性显示基板包括对应可折叠显示装置的非折叠区的第一区域和对应可折叠显示装置的折叠区的第二区域,所述方法包括:
在第一区域形成多个多晶硅薄膜晶体管;
在第二区域形成多个有机薄膜晶体管;
在第一区域和第二区域之间进行显示补偿。
8.如权利要求7所述的制作方法,其特征在于,还包括:在对应柔性显示基板的非显示区域的第一区域形成驱动电路的非晶硅晶体管。
9.如权利要求7所述的制作方法,其特征在于,所述在第一区域形成多个多晶硅薄膜晶体管,包括:
在第一区域形成多个多晶硅薄膜晶体管的有源层;
在第二区域形成多个有机薄膜晶体管的有源层;
在形成有机薄膜晶体管的有源层的第二区域形成遮挡层;
对第一区域的多晶硅薄膜晶体管的有源层进行离子注入处理;
剥离第二区域的遮挡层。
10.如权利要求7所述的制作方法,其特征在于,所述在第一区域形成多个多晶硅薄膜晶体管,还包括:
对第一区域的多晶硅薄膜晶体管的有源层进行退火处理。
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CN109659347B (zh) * 2018-12-19 2021-02-26 武汉华星光电半导体显示技术有限公司 柔性oled显示面板以及显示装置
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CN111402821B (zh) * 2020-04-27 2021-09-03 杭州领挚科技有限公司 一种led背光板及制备毫米级以下led背光板的方法

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JP2008147418A (ja) * 2006-12-11 2008-06-26 Hitachi Ltd 薄膜トランジスタ装置、画像表示装置およびその製造方法
US9740035B2 (en) * 2013-02-15 2017-08-22 Lg Display Co., Ltd. Flexible organic light emitting display device and method for manufacturing the same
CN106653810B (zh) * 2016-12-15 2020-09-04 武汉华星光电技术有限公司 Oled显示面板以及oled显示装置
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