CN108780851B - 发光元件的保护膜沉积方法 - Google Patents
发光元件的保护膜沉积方法 Download PDFInfo
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- CN108780851B CN108780851B CN201780015710.3A CN201780015710A CN108780851B CN 108780851 B CN108780851 B CN 108780851B CN 201780015710 A CN201780015710 A CN 201780015710A CN 108780851 B CN108780851 B CN 108780851B
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- protective film
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- 230000001681 protective effect Effects 0.000 title claims abstract description 204
- 238000000151 deposition Methods 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 47
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000002243 precursor Substances 0.000 claims description 34
- 239000012495 reaction gas Substances 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 7
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims 1
- XEJUFRSVJVTIFW-UHFFFAOYSA-N triethyl(triethylsilyl)silane Chemical compound CC[Si](CC)(CC)[Si](CC)(CC)CC XEJUFRSVJVTIFW-UHFFFAOYSA-N 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 229
- 230000008021 deposition Effects 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000009975 flexible effect Effects 0.000 description 6
- WILBTFWIBAOWLN-UHFFFAOYSA-N triethyl(triethylsilyloxy)silane Chemical compound CC[Si](CC)(CC)O[Si](CC)(CC)CC WILBTFWIBAOWLN-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- -1 SiOx compound Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- WZUCGJVWOLJJAN-UHFFFAOYSA-N diethylaminosilicon Chemical compound CCN([Si])CC WZUCGJVWOLJJAN-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0027868 | 2016-03-08 | ||
| KR1020160027868A KR101809885B1 (ko) | 2016-03-08 | 2016-03-08 | 발광소자의 보호막 증착방법 |
| PCT/KR2017/002470 WO2017155289A1 (ko) | 2016-03-08 | 2017-03-07 | 발광소자의 보호막 증착방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108780851A CN108780851A (zh) | 2018-11-09 |
| CN108780851B true CN108780851B (zh) | 2020-10-23 |
Family
ID=59790743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780015710.3A Active CN108780851B (zh) | 2016-03-08 | 2017-03-07 | 发光元件的保护膜沉积方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10777777B2 (ja) |
| JP (1) | JP6896978B2 (ja) |
| KR (1) | KR101809885B1 (ja) |
| CN (1) | CN108780851B (ja) |
| WO (1) | WO2017155289A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102554830B1 (ko) | 2018-10-04 | 2023-07-13 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0479194A (ja) * | 1990-07-19 | 1992-03-12 | Toshiba Corp | 薄膜ｅｌ素子 |
| JP2006164543A (ja) * | 2004-12-02 | 2006-06-22 | Serubakku:Kk | 有機ｅｌ素子の封止膜、有機ｅｌ表示パネルおよびその製造方法 |
| JP4707403B2 (ja) * | 2005-02-02 | 2011-06-22 | 株式会社アルバック | パルス分割供給によるプラズマ処理方法及び装置並びにプラズマｃｖｄ方法 |
| US7652305B2 (en) * | 2007-02-23 | 2010-01-26 | Corning Incorporated | Methods and apparatus to improve frit-sealed glass package |
| JP2010525540A (ja) * | 2007-04-27 | 2010-07-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 封入構造部を具備するｏｌｅｄユニット |
| JP5532557B2 (ja) * | 2007-07-09 | 2014-06-25 | 大日本印刷株式会社 | ガスバリア性シート、ガスバリア性シートの製造方法、封止体、及び有機ｅｌディスプレイ |
| JP4626649B2 (ja) | 2007-12-21 | 2011-02-09 | ソニー株式会社 | 有機発光装置の製造方法 |
| TWI420722B (zh) * | 2008-01-30 | 2013-12-21 | Osram Opto Semiconductors Gmbh | 具有封裝單元之裝置 |
| KR101549262B1 (ko) * | 2009-06-29 | 2015-09-01 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 그 제조방법 |
| KR101089715B1 (ko) * | 2009-11-05 | 2011-12-07 | 한국기계연구원 | 다층 박막형 봉지막 및 이의 제조방법 |
| JP5577124B2 (ja) * | 2010-03-18 | 2014-08-20 | 株式会社ジャパンディスプレイ | 有機半導体装置及びその製造方法 |
| US20130247971A1 (en) * | 2011-09-20 | 2013-09-26 | Air Products And Chemicals, Inc. | Oxygen Containing Precursors for Photovoltaic Passivation |
| KR101862606B1 (ko) * | 2011-10-05 | 2018-07-06 | 엘지디스플레이 주식회사 | 플렉시블 ｏｌｅｄ 표시장치 |
| KR20140008747A (ko) * | 2012-07-11 | 2014-01-22 | 삼성전자주식회사 | 화상형성장치 및 방법 |
| JP6125176B2 (ja) * | 2012-08-27 | 2017-05-10 | シャープ株式会社 | 高透過率保護膜作製方法および半導体発光素子の製造方法 |
| FR2997770B1 (fr) * | 2012-11-07 | 2015-11-20 | Saint Gobain | Support electroconducteur pour vitrage a diffusion variable par cristaux liquides, et un tel vitrage |
| JP6040769B2 (ja) * | 2012-12-28 | 2016-12-07 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
| KR20140087470A (ko) * | 2012-12-31 | 2014-07-09 | 주식회사 테스 | 발광소자의 보호막 증착방법 |
| JP6005536B2 (ja) * | 2013-01-25 | 2016-10-12 | 株式会社神戸製鋼所 | アーク蒸発源を備えたプラズマｃｖｄ装置 |
| JP6335675B2 (ja) * | 2014-06-19 | 2018-05-30 | 株式会社Ｊｏｌｅｄ | マスク及び有機発光デバイスの製造方法 |
-
2016
- 2016-03-08 KR KR1020160027868A patent/KR101809885B1/ko active IP Right Grant
-
2017
- 2017-03-07 WO PCT/KR2017/002470 patent/WO2017155289A1/ko active Application Filing
- 2017-03-07 JP JP2018545633A patent/JP6896978B2/ja active Active
- 2017-03-07 CN CN201780015710.3A patent/CN108780851B/zh active Active
-
2018
- 2018-09-07 US US16/124,475 patent/US10777777B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019512874A (ja) | 2019-05-16 |
| WO2017155289A1 (ko) | 2017-09-14 |
| CN108780851A (zh) | 2018-11-09 |
| KR20170104882A (ko) | 2017-09-18 |
| JP6896978B2 (ja) | 2021-06-30 |
| US10777777B2 (en) | 2020-09-15 |
| KR101809885B1 (ko) | 2017-12-20 |
| US20190019996A1 (en) | 2019-01-17 |
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