CN108773219A - A kind of Novel mesh-free knot screen printing process - Google Patents
A kind of Novel mesh-free knot screen printing process Download PDFInfo
- Publication number
- CN108773219A CN108773219A CN201810347359.4A CN201810347359A CN108773219A CN 108773219 A CN108773219 A CN 108773219A CN 201810347359 A CN201810347359 A CN 201810347359A CN 108773219 A CN108773219 A CN 108773219A
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- CN
- China
- Prior art keywords
- version
- net
- mesh
- screen printing
- printing process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000007650 screen-printing Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 239000002002 slurry Substances 0.000 claims abstract description 15
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 6
- 229920002449 FKM Polymers 0.000 claims description 3
- 229920003225 polyurethane elastomer Polymers 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 238000012546 transfer Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/12—Stencil printing; Silk-screen printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/26—Printing on other surfaces than ordinary paper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M7/00—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock
- B41M7/009—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock using thermal means, e.g. infrared radiation, heat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Disclosed by the invention to belong to technical field of solar cell manufacturing, specially a kind of Novel mesh-free knot screen printing process, the Novel mesh-free knot screen printing process includes the following steps:S1:The removing surface of silicon wafer is clean, it adjusts print station and without net netting the distance between version, is adjusted up print station to just being contacted with halftone;S2:Slurry is poured on one end without net netting version, is smeared using scraper uniform so that slurry is uniformly filled between mesh, and the pressure between the cutting edge of scraper and version of knotting without net is 10-15N/cm;S3:The silicon wafer printed is dried and is sintered, realize the surface that slurry is uniformly coated in silicon wafer, and thickness is uniform, the case where preventing the leakage of slurry, will not causing to be broken, the usage amount and grid line shading-area of low cell piece front side silver paste, to reduce production cost, transfer efficiency is improved, preparation process is simple, of low cost.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, specially a kind of Novel mesh-free knot screen printing process.
Background technology
The deterioration of conventional fossil lack of energy and ecological environment, energy crisis have become international community economy
One of contradiction of development.To solve this big crisis, countries in the world all are making great efforts to explore new energy.In new energy, especially draw
What people gazed at is the permanent energy-solar energy for being constantly poured into the earth.With the development of solar energy recent years, competition
It is growing more intense.High efficiency, low cost become the existence of solar energy enterprise originally.External advanced enterprises battery efficiency has been broken through
20%, domestic leading enterprise also in a large amount of input research and development, strives to catch up.In the manufacturing process of crystal silicon solar battery front electrode
In, it is also most crucial technology that screen printing technique, which is the most frequently used,.Front main grid line is obtained by silk-screen printing and secondary grid line is (thin
Grid line), secondary grid line is used for collecting the photogenerated current of silicon chip surface, and main gate line is used to collect the electric current on secondary grid line and conducts to outer
Circuit.Screen painting mainly include net netting version printing with without net knot two kinds of version printing, and without net netting platemaking technology due to
Strike through is more preferable when net knot being not present in production process, between line and line, thus can to print, existing without net netting version
Printing technology low production efficiency, slurry smearing is uneven, for this purpose, it is proposed that a kind of Novel mesh-free knot screen printing process.
Invention content
The purpose of the present invention is to provide a kind of Novel mesh-free knot screen printing process, to solve to carry in above-mentioned background technology
The problem of going out.
To achieve the above object, the present invention provides the following technical solutions:A kind of Novel mesh-free knot screen printing process, this is new
Type includes the following steps without net knot screen printing process:
S1:The removing surface of silicon wafer is clean, then silicon wafer is mounted on board, will be placed on without net netting version
The top of silicon wafer adjusts print station and without net netting the distance between version, is adjusted up print station to just being contacted with halftone;
S2:Slurry is poured on one end without net netting version, is smeared using scraper uniform so that slurry is uniformly filled in mesh
Between, the pressure between the cutting edge of scraper and version of knotting without net is 10-15N/cm;
S3:The silicon wafer printed is dried and is sintered.
Preferably, for silk screen when placing, no net netting version closes other regions in addition to gridline in the step S1.
Preferably, the stretching angle without net netting version is zero degree, and the material without net netting version silk screen is stainless
The mesh number of steel material, silk screen is 250-280 mesh.
Preferably, the line width of the gridline without net netting version is 80-120 micron, described to knot version silk screen without net
Stretching tension is 26-32 newton.
Preferably, the material of the scraper in the step S2 is polyurethane rubber or Viton, the speed of the scraper
Adjusting angle for 300 mm/seconds, the scraper is 45 degree of -75 degree.
Preferably, the sintering temperature in the step S3 is 500-800 degrees Celsius, and sintering time is 1-2 minutes.
Compared with prior art, the beneficial effects of the invention are as follows:A kind of Novel mesh-free netting version printing that the invention proposes
Technique realizes the surface that slurry is uniformly coated in silicon wafer, and thickness is uniform, it is therefore prevented that the leakage of slurry will not cause
The case where fracture, occurs, the usage amount and grid line shading-area of low cell piece front side silver paste, to reduce production cost, improves and turns
Efficiency is changed, preparation process is simple, of low cost.
Specific implementation mode
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is common
The every other embodiment that technical staff is obtained without making creative work belongs to the model that the present invention protects
It encloses.
The present invention provides a kind of technical solution:A kind of Novel mesh-free knot screen printing process, Novel mesh-free netting version print
Dataller's skill includes the following steps:
S1:The removing surface of silicon wafer is clean, then silicon wafer is mounted on board, will be placed on without net netting version
The top of silicon wafer adjusts print station and without net netting the distance between version, is adjusted up print station to just being contacted with halftone;
S2:Slurry is poured on one end without net netting version, is smeared using scraper uniform so that slurry is uniformly filled in mesh
Between, the pressure between the cutting edge of scraper and version of knotting without net is 10-15N/cm;
S3:The silicon wafer printed is dried and is sintered.
Wherein, for silk screen when placing, no net netting version closes other regions in addition to gridline, institute in the step S1
It is zero degree to state the stretching angle without net netting version, and the material without net netting version silk screen is stainless steel, the mesh number of silk screen
Line width for 250-280 mesh, the gridline without net netting version is 120 microns of 80-, described without the taut of net netting version silk screen
Net tension is 26-32 newton, and the material of the scraper in the step S2 is polyurethane rubber or Viton, the speed of the scraper
Degree is 300 mm/seconds, and the adjusting angle of the scraper is 45 degree of -75 degree, and the sintering temperature in the step S3 is 500-800
Degree Celsius, sintering time is 1-2 minutes.
The Novel mesh-free knot screen printing process realizes the surface that slurry is uniformly coated in silicon wafer, and thickness is equal
It is even, it is therefore prevented that the leakage of slurry, the case where will not causing to be broken, the usage amount of low cell piece front side silver paste and grid line shading
Area improves transfer efficiency, preparation process is simple, of low cost to reduce production cost.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (6)
1. a kind of Novel mesh-free knot screen printing process, it is characterised in that:The Novel mesh-free knot screen printing process includes as follows
Step:
S1:The removing surface of silicon wafer is clean, then silicon wafer is mounted on board, silicon wafer will be placed on without net netting version
The top of piece adjusts print station and without net netting the distance between version, is adjusted up print station to just being contacted with halftone;
S2:Slurry is poured on one end without net netting version, is smeared using scraper uniform so that slurry be uniformly filled in mesh it
Between, the pressure between the cutting edge of scraper and version of knotting without net is 10-15N/cm;
S3:The silicon wafer printed is dried and is sintered.
2. a kind of Novel mesh-free knot screen printing process according to claim 1, it is characterised in that:Silk in the step S1
For net when placing, no net netting version closes other regions in addition to gridline.
3. a kind of Novel mesh-free knot screen printing process according to claim 1, it is characterised in that:It is described without net knot version
Stretching angle be zero degree, the material without net netting version silk screen is stainless steel, and the mesh number of silk screen is 250-280 mesh.
4. a kind of Novel mesh-free knot screen printing process according to claim 1, it is characterised in that:It is described without net knot version
Gridline line width be 80-120 micron, it is described without net netting version silk screen stretching tension be 26-32 newton.
5. a kind of Novel mesh-free knot screen printing process according to claim 1, it is characterised in that:In the step S2
The material of scraper is polyurethane rubber or Viton, and the speed of the scraper is 300 mm/seconds, the adjustment angle of the scraper
Degree is 45 degree of -75 degree.
6. a kind of Novel mesh-free knot screen printing process according to claim 1, it is characterised in that:In the step S3
Sintering temperature is 500-800 degrees Celsius, and sintering time is 1-2 minutes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810347359.4A CN108773219A (en) | 2018-04-18 | 2018-04-18 | A kind of Novel mesh-free knot screen printing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810347359.4A CN108773219A (en) | 2018-04-18 | 2018-04-18 | A kind of Novel mesh-free knot screen printing process |
Publications (1)
Publication Number | Publication Date |
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CN108773219A true CN108773219A (en) | 2018-11-09 |
Family
ID=64033899
Family Applications (1)
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CN201810347359.4A Pending CN108773219A (en) | 2018-04-18 | 2018-04-18 | A kind of Novel mesh-free knot screen printing process |
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CN (1) | CN108773219A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113997709A (en) * | 2021-12-29 | 2022-02-01 | 南京日托光伏新能源有限公司 | Printing method for realizing thinning of front grid line of MWT battery |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006224370A (en) * | 2005-02-16 | 2006-08-31 | Sharp Corp | Screen printing method and solar cell manufactured by this method |
CN105514183A (en) * | 2015-11-30 | 2016-04-20 | 黄河水电光伏产业技术有限公司 | Method for preparing front electrode of crystalline silicon solar cell |
CN106274039A (en) * | 2016-08-16 | 2017-01-04 | 昆山良品丝印器材有限公司 | Crystalline silicon printing half tone and mask-making technology thereof |
CN106683741A (en) * | 2017-01-22 | 2017-05-17 | 通威太阳能(成都)有限公司 | Solar cell production process using net-knot-free printing |
CN106976302A (en) * | 2017-05-04 | 2017-07-25 | 昆山良品丝印器材有限公司 | A kind of 0 degree of angle half tone is thrown the net equipment and its corresponding application method |
CN107086056A (en) * | 2017-04-14 | 2017-08-22 | 北京市合众创能光电技术有限公司 | Preparation and typography for the front conductive silver slurry without net netting version printing |
CN107512074A (en) * | 2017-07-10 | 2017-12-26 | 苏州矽美仕绿色新能源有限公司 | A kind of typography without net netting version |
-
2018
- 2018-04-18 CN CN201810347359.4A patent/CN108773219A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006224370A (en) * | 2005-02-16 | 2006-08-31 | Sharp Corp | Screen printing method and solar cell manufactured by this method |
CN105514183A (en) * | 2015-11-30 | 2016-04-20 | 黄河水电光伏产业技术有限公司 | Method for preparing front electrode of crystalline silicon solar cell |
CN106274039A (en) * | 2016-08-16 | 2017-01-04 | 昆山良品丝印器材有限公司 | Crystalline silicon printing half tone and mask-making technology thereof |
CN106683741A (en) * | 2017-01-22 | 2017-05-17 | 通威太阳能(成都)有限公司 | Solar cell production process using net-knot-free printing |
CN107086056A (en) * | 2017-04-14 | 2017-08-22 | 北京市合众创能光电技术有限公司 | Preparation and typography for the front conductive silver slurry without net netting version printing |
CN106976302A (en) * | 2017-05-04 | 2017-07-25 | 昆山良品丝印器材有限公司 | A kind of 0 degree of angle half tone is thrown the net equipment and its corresponding application method |
CN107512074A (en) * | 2017-07-10 | 2017-12-26 | 苏州矽美仕绿色新能源有限公司 | A kind of typography without net netting version |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113997709A (en) * | 2021-12-29 | 2022-02-01 | 南京日托光伏新能源有限公司 | Printing method for realizing thinning of front grid line of MWT battery |
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Application publication date: 20181109 |
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