CN104103715B - A kind of preparation method of double-decker ITO electrode crystal silicon solar energy battery - Google Patents
A kind of preparation method of double-decker ITO electrode crystal silicon solar energy battery Download PDFInfo
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- CN104103715B CN104103715B CN201410303370.2A CN201410303370A CN104103715B CN 104103715 B CN104103715 B CN 104103715B CN 201410303370 A CN201410303370 A CN 201410303370A CN 104103715 B CN104103715 B CN 104103715B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 42
- 239000010703 silicon Substances 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 59
- 239000002131 composite material Substances 0.000 claims abstract description 30
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 235000008216 herbs Nutrition 0.000 claims abstract description 4
- 210000002268 wool Anatomy 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000013077 target material Substances 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000005477 sputtering target Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000000427 thin-film deposition Methods 0.000 claims description 6
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract description 4
- 238000002834 transmittance Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to the preparation method of a kind of double-decker ITO electrode crystal silicon solar energy battery, including making herbs into wool, thermal diffusion p n knot, go phosphorosilicate glass, preparation ITO electrode, back up Al back surface field and Ag electrode, front printing Ag main gate line.Prepare double-decker ITO electrode by magnetron sputtering, after deposition ITO composite conductive thin film and ito thin film annealing terminates, print Al back surface field and Ag electrode at silicon chip back side, front side of silicon wafer ito thin film only prints Ag main gate line and without printing Ag pair grid line.ITO electrode light transmittance and electrical conductivity be high and good passivation effect, and series resistance is little, and battery conversion efficiency can improve 0.1% ~ 0.2%；Decrease the consumption of Ag slurry, reduce the production cost of battery.
Description
Technical field
The invention belongs to application of solar, particularly relate to the preparation method of a kind of double-decker ITO electrode crystal silicon solar energy battery.
Background technology
Electrode fabrication is last procedure of manufacture of solar cells, and it carries the carrier collected in silicon chip and is transported to the responsibility of external circuit, is one of key link in solaode processing procedure.At present, the manufacture of electrode mainly by screen-printed metal slurry, forms Ag electrode at front side of silicon wafer, forms Ag back electrode and Al back surface field at silicon chip back side.Owing to Ag is noble metal, it constitutes about the 30% of non-silicon cost so that the cost of solaode remains high；In addition, due to the interception of front surface A g grid line, reduce the photon numbers arriving solaode emitter stage, reduce the electric current density of solaode, and reduce shading-area and need to reduce Ag grid line width, metal paste performance and half tone quality are had higher requirement by this；Positive electricity extremely grid finger-like is distributed so that the lateral resistance of battery emitter stage is big, causes the series resistance of solaode to increase, and the conversion efficiency of battery is difficult to improve.Therefore, these shortcomings of noble metal electrode constrain developing rapidly of solaode.
ITO has high conductivity, high permeability, excellent mar proof, mechanical strength and chemical stability, it it is the current most potential alternate material of Ag electrode, it is embodied in: the Ag electrode of solar battery front side can be replaced in whole or in part, reduces solaode preparation cost；Ito thin film is transparent, and its light transmission rate is up to more than 90%, and available solar photon increasing number, the electric current density of solaode increases；Ito thin film resistivity is low, owing to it is uniformly distributed at silicon chip surface so that the lateral resistance of solaode is low, greatly reduces the series resistance of solaode.
It is currently used for the front electrode scheme of crystal silicon battery as shown in Figure 1, its pluses and minuses are as follows: be deposited directly on emitter junction by ITO, this method is the simplest, the low cost of manufacture of battery, but owing to ito thin film itself is without passivation effect, the recombination velocity of silicon chip surface is fast so that the electric current that electrode is collected reduces, decrease in efficiency；And ito thin film is improper without annealing or annealing process, the resistivity of ito thin film is higher, needs to print Ag electrode on the ito thin film of front, i.e. needs to print main grid and the secondary grid line of part, and the consumption reduction amount of Ag is limited.
Summary of the invention
The present invention is directed to the deficiency that above-mentioned prior art exists, it is proposed that the preparation method of a kind of double-decker ITO electrode crystal silicon solar energy battery, ITO electrode light transmittance and electrical conductivity height and good passivation effect, series resistance is little, and battery conversion efficiency can improve 0.1% ~ 0.2%；And technique is simple, Ag pair grid line is not printed in front, is greatly saved the consumption of Ag slurry, reduces production cost.
The present invention solves technical problem and is adopted the technical scheme that, a kind of preparation method of double-decker ITO electrode crystal silicon solar energy battery, including making herbs into wool, thermal diffusion p-n junction, go phosphorosilicate glass, preparation ITO electrode, back up Al back surface field and Ag electrode, front printing Ag main gate line, described preparation ITO electrode is carried out in magnetron sputtering apparatus, it is characterized in that, described preparation ITO electrode follows the steps below:
(1) the silicon chip removing phosphorosilicate glass is placed in anode, ITO ceramic target and titanium dioxide silicon target and/or silicon nitride target is placed in negative electrode, is passed through Ar and H2Mixed gas, start radio-frequency power supply, start magnetron sputtering, N+ layer deposits one layer of ITO composite conductive thin film, controls ITO: silicon dioxide in ITO composite conductive thin film according to sputtering power size: the mol ratio of silicon nitride is 1: 0.01 ~ 0.3: 0.01 ~ 0.3, or the mol ratio of ITO: silicon dioxide or silicon nitride is 1: 0.01 ~ 0.3, and to make the thickness of ITO composite conductive thin film be 10 ~ 30nm, light transmission rate is 85% ~ 90%, and refractive index is 1.7 ~ 1.9, resistivity 5 × 10-4~1×10-3Ω.cm；
(2) the gas in magnetron sputtering chamber is taken away, continue to be passed through Ar and H2Mixed gas, and the sputtering target material beyond ITO ceramic target material is shielded, start again at magnetron sputtering, depositing one layer of pure ito thin film on ITO composite conductive thin film, controlling ito thin film thickness is 30 ~ 80nm, and light transmission rate is more than 92%, refractive index is 1.8 ~ 1.9, and resistivity is 1 × 10-5~3×10-4Ω.cm；
(3) during magnetron sputtering technique, the temperature of silicon chip controls at 250 ~ 400 DEG C so that deposits in ITO composite conductive thin film and ito thin film deposition process and anneals；After ito thin film deposition terminates, the temperature of silicon chip is improved 50 ~ 150 DEG C, takes gas in magnetron sputtering cavity away, be then charged with H2, continue annealing 2 ~ 20min.
The present invention prepares double-decker ITO electrode by magnetron sputtering, deposition ITO composite conductive thin film and ito thin film and annealing terminate after, in silicon chip back side printing Al back surface field and Ag electrode, front side of silicon wafer ito thin film only prints Ag main gate line and without printing Ag pair grid line.
In the present invention, the negative electrode of magnetron sputtering apparatus arranging multiple independent sputtering target material rest area, different targets is placed respectively, the power supply that each target is corresponding is different, and its power can regulate, and power is the biggest, the component sputtered out is the most, and this component ratio in laminated film is the highest.ITO ceramic target-titanium dioxide silicon target, ITO ceramic target-silicon nitride target or ITO ceramic target-titanium dioxide silicon target-silicon nitride target combination are sputtered, just can obtain corresponding ITO composite conductive thin film.
The present invention designs double-decker ITO electrode, ITO composite conductive thin film and ito thin film is successively deposited in magnetron sputtering apparatus, and the preparation of double-decker i.e. ITO composite conductive thin film and ito thin film disposably completes in magnetron sputtering apparatus with annealing, and technique is simple；ITO electrode light transmittance and electrical conductivity be high and good passivation effect, and series resistance is little, and battery conversion efficiency can improve 0.1% ~ 0.2%；Front side of silicon wafer ito thin film only prints Ag main gate line without printing Ag pair grid line, greatly reduce the consumption of Ag slurry, reduce the production cost of battery.
Accompanying drawing explanation
Fig. 1 prior art crystal silicon solar energy battery structural representation, front ito thin film layer is printed with Ag main gate line and Ag pair grid line.Wherein: 1-back side Ag electrode, 2-Al back surface field, 3-P type Si substrate, 4-N+ layer, 5-ito thin film layer, 6-front surface A g electrode (including main gate line and secondary grid line).
Fig. 2 crystal silicon solar energy battery of the present invention structural representation.Wherein, 1-back side Ag electrode, 2-Al back surface field, 3-P type Si substrate, 4-N+ layer, 7-ITO composite conductive thin film, 8-ito thin film layer, 9-front surface A g main gate line.
Detailed description of the invention
Embodiment 1: the preparation method of a kind of double-decker ITO electrode crystal silicon solar energy battery, comprises the following steps:
Step 1: wet-method etching；
Step 2: thermal diffusion p-n junction；
Step 3: remove phosphorosilicate glass, and be dried；
Step 4: prepare ITO electrode in magnetron sputtering apparatus, the negative electrode of magnetron sputtering apparatus arranges 3 independent sputtering target material rest areas, to place different targets respectively and to make the corresponding different sputtering power of each target and power supply；Preparation process is as follows:
(1) the silicon chip removing phosphorosilicate glass is placed in anode, ITO ceramic target and titanium dioxide silicon target is put into sputtering target material rest area, is passed through Ar and H2Mixed gas, start radio-frequency power supply, start magnetron sputtering, N+ layer deposits one layer of ITO composite conductive thin film, controlling the mol ratio of ITO: silicon dioxide in ITO composite conductive thin film according to sputtering power size is 1: 0.01 ~ 0.3, and to make the thickness of ITO composite conductive thin film be 10 ~ 30nm, and light transmission rate is 85% ~ 90%, refractive index is 1.7 ~ 1.9, resistivity 5 × 10-4~1×10-3Ω.cm；
(2) the gas in magnetron sputtering chamber is taken away, continue to be passed through Ar and H2Mixed gas, and by sputtering silicon oxide target shield, start again at magnetron sputtering, depositing one layer of pure ito thin film on ITO composite conductive thin film, controlling ito thin film thickness is 30 ~ 80nm, and light transmission rate is more than 92%, refractive index is 1.8 ~ 1.9, and resistivity is 1 × 10-5~3×10-4Ω.cm；
(3) during magnetron sputtering technique, the temperature of silicon chip controls at 250 ~ 400 DEG C so that deposits in ITO composite conductive thin film and ito thin film deposition process and anneals；After ito thin film deposition terminates, the temperature of silicon chip is improved 50 ~ 150 DEG C, takes gas in magnetron sputtering cavity away, be then charged with H2, continue annealing 2 ~ 20min；
Step 5: at silicon chip back side printing Al back surface field and Ag electrode；
Step 6: only print Ag main gate line on front side of silicon wafer ito thin film.
The crystal silicon solar energy battery structure obtained by above-mentioned preparation method is as shown in Figure 2.It from bottom to top includes: back side Ag electrode 1, Al back surface field 2, p-type Si substrate 3, N+ layer 4, ITO composite conductive thin film 7, ito thin film layer 8 and Ag main gate line 9.Its light utilization efficiency is high, series resistance is little, and the conversion efficiency of battery can improve 0.1%-0.2% on the basis of existing technology.
Embodiment 2: the preparation method of another kind of double-decker ITO electrode crystal silicon solar energy battery, wherein:
Step 1: dry method making herbs into wool；
In step 4 (1): the silicon chip removing phosphorosilicate glass is placed in anode, ITO ceramic target and silicon nitride target are put into sputtering target material rest area, is passed through Ar and H2Mixed gas, start radio-frequency power supply, start magnetron sputtering, N+ layer deposits one layer of ITO composite conductive thin film, controlling the mol ratio of ITO: silicon nitride in ITO composite conductive thin film according to sputtering power size is 1: 0.01 ~ 0.3, and to make the thickness of ITO composite conductive thin film be 10 ~ 30nm, and light transmission rate is 85% ~ 90%, refractive index is 1.7 ~ 1.9, resistivity 5 × 10-4~1×10-3Ω.cm；
In step 4 (2): taken away by the gas in magnetron sputtering chamber, continue to be passed through Ar and H2Mixed gas, and silicon nitride sputtering target material is shielded, start again at magnetron sputtering, depositing one layer of pure ito thin film on ITO composite conductive thin film, controlling ito thin film thickness is 30 ~ 80nm, and light transmission rate is more than 92%, refractive index is 1.8 ~ 1.9, and resistivity is 1 × 10-5~3×10-4Ω.cm；
Remaining each step is the most same as in Example 1.
Embodiment 3: the preparation method of another double-decker ITO electrode crystal silicon solar energy battery, wherein:
In step 4 (1): the silicon chip removing phosphorosilicate glass is placed in anode, ITO ceramic target, titanium dioxide silicon target and silicon nitride target are put into sputtering target material rest area, is passed through Ar and H2Mixed gas, start radio-frequency power supply, start magnetron sputtering, N+ layer deposits one layer of ITO composite conductive thin film, controlling ITO: silicon dioxide in ITO composite conductive thin film according to sputtering power size: the mol ratio of silicon nitride is 1: 0.01 ~ 0.3: 0.01 ~ 0.3, and to make the thickness of ITO composite conductive thin film be 10 ~ 30nm, light transmission rate is 85% ~ 90%, refractive index is 1.7 ~ 1.9, resistivity 5 × 10-4~1×10-3Ω.cm；
In step 4 (2): taken away by the gas in magnetron sputtering chamber, continue to be passed through Ar and H2Mixed gas, and silicon dioxide and silicon nitride sputtering target material are shielded, start again at magnetron sputtering, depositing one layer of pure ito thin film on ITO composite conductive thin film, controlling ito thin film thickness is 30 ~ 80nm, and light transmission rate is more than 92%, refractive index is 1.8 ~ 1.9, and resistivity is 1 × 10-5~3×10-4Ω.cm；
Remaining each step is the most same as in Example 1.
Claims (2)
1. the preparation method of a double-decker ITO electrode crystal silicon solar energy battery, including making herbs into wool, thermal diffusion p-n junction, go phosphorosilicate glass, preparation ITO electrode, back up Al back surface field and Ag electrode, front printing Ag main gate line, described preparation ITO electrode is carried out in magnetron sputtering apparatus, it is characterized in that, described preparation ITO electrode follows the steps below:
(1) the silicon chip removing phosphorosilicate glass is placed in anode, ITO ceramic target and titanium dioxide silicon target and/or silicon nitride target is placed in negative electrode, is passed through Ar and H2Mixed gas, start radio-frequency power supply, start magnetron sputtering, N+ layer deposits one layer of ITO composite conductive thin film, controls ITO: silicon dioxide in ITO composite conductive thin film according to sputtering power size: the mol ratio of silicon nitride is 1: 0.01 ~ 0.3: 0.01 ~ 0.3, or the mol ratio of ITO: silicon dioxide or silicon nitride is 1: 0.01 ~ 0.3, and to make the thickness of ITO composite conductive thin film be 10 ~ 30nm, light transmission rate is 85% ~ 90%, and refractive index is 1.7 ~ 1.9, resistivity 5 × 10-4~1×10-3Ω.cm；
(2) the gas in magnetron sputtering chamber is taken away, continue to be passed through Ar and H2Mixed gas, and the sputtering target material beyond ITO ceramic target material is shielded, start again at magnetron sputtering, depositing one layer of pure ito thin film on ITO composite conductive thin film, controlling ito thin film thickness is 30 ~ 80nm, and light transmission rate is more than 92%, refractive index is 1.8 ~ 1.9, and resistivity is 1 × 10-5~3×10-4Ω.cm；
(3) during magnetron sputtering technique, the temperature of silicon chip controls at 250 ~ 400 DEG C so that deposits in ITO composite conductive thin film and ito thin film deposition process and anneals；After ito thin film deposition terminates, the temperature of silicon chip is improved 50 ~ 150 DEG C, takes gas in magnetron sputtering cavity away, be then charged with H2, continue annealing 2 ~ 20min.
The preparation method of a kind of double-decker ITO electrode crystal silicon solar energy battery the most according to claim 1, it is characterized in that, after annealing terminates, in silicon chip back side printing Al back surface field and Ag electrode, front side of silicon wafer ito thin film only prints Ag main gate line and without printing Ag pair grid line.
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| CN111403551A (en) * | 2020-03-24 | 2020-07-10 | 浙江爱旭太阳能科技有限公司 | Preparation method of high-efficiency monocrystalline silicon PERC solar cell |
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| CN101587913A (en) * | 2009-06-26 | 2009-11-25 | 上海大学 | Novel SINP silicone blue-violet battery and preparation method thereof |
| CN102498573A (en) * | 2009-09-18 | 2012-06-13 | 肖特太阳能控股公司 | Crystalline solar cell, method for producing said type of solar cell and method for producing a solar cell module |
| US8334163B1 (en) * | 2011-11-30 | 2012-12-18 | Au Optronics Corp. | Method of forming solar cell |
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| CN101587913A (en) * | 2009-06-26 | 2009-11-25 | 上海大学 | Novel SINP silicone blue-violet battery and preparation method thereof |
| CN102498573A (en) * | 2009-09-18 | 2012-06-13 | 肖特太阳能控股公司 | Crystalline solar cell, method for producing said type of solar cell and method for producing a solar cell module |
| US8334163B1 (en) * | 2011-11-30 | 2012-12-18 | Au Optronics Corp. | Method of forming solar cell |
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