CN108767104A - Thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap - Google Patents
Thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap Download PDFInfo
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- CN108767104A CN108767104A CN201810208080.8A CN201810208080A CN108767104A CN 108767104 A CN108767104 A CN 108767104A CN 201810208080 A CN201810208080 A CN 201810208080A CN 108767104 A CN108767104 A CN 108767104A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
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Abstract
The thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap of the present invention, the luminous energy being mainly used in the thermal energy and environment for collecting central processing unit (CPU) give the low power consumption component power supply being distributed in around central processing unit (CPU).The energy harvester of the present invention collects the photoelectricity in environment using the heterogeneous photoelectric PN junction of Nano grade, the thermal energy on central processing unit (CPU) is collected using the thermocouple of Nano grade, the thermal conductivity of nanometer thermoelectric idol is far below conventional bulk, with higher thermoelectric conversion efficiency, then the energy being collected into is converted into DC signal by DC-DC conversion modules, it is ultimately stored in rechargeable battery, the electric energy in rechargeable battery may be implemented to the power supply of low power consumption component.The thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap is produced on N-type silicon chip substrate, including photocell and thermoelectric energy collector, and the two carries out electric isolation by layer of silicon dioxide layer.
Description
Technical field
The present invention proposes a kind of thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap, belongs to micro- electricity
The technical field of sub- mechanical system (MEMS).
Background technology
Economy and society development in China has been enter into a large amount of consumption energy stages, and self energy is poor, around the energy
The International Politics of formation, economic environment are again complicated, this just determines that we must pay attention to hair that is energy saving, supporting regenerative resource
Exhibition, could realize the sustainable of energy-consuming.At the same time, as the important hardware composition part of information-intensive society, central processing
The power consumption of device CPU is relatively large, and it is serious to generate heat, and efficiency is the bottom of compared with.The heat that central processing unit distributes when working not only causes
Its temperature increases, and affects normal work, also creates the waste of energy.
Using nanometric PN junctions and nanometer thermoelectric heap as the thermoelectricity photovoltaic energy collection device of generating element, there is small spy
Point, while compared with traditional thermoelectricity photovoltaic energy collection device, the thermal conductivity of nanometer thermoelectric heap is far below conventional bulk, has
Higher thermoelectric conversion efficiency, the luminous energy in can working central processing unit in the thermal energy and environment that dissipate are collected again,
It collects the electric energy generated to be stored in battery by DC-DC conversions, the service efficiency of energy can not only be improved, reduce the energy
Waste, while being alternatively the low power consumption component power supply being arranged in around central processing unit, the final mesh for realizing green communications
's.
Invention content
Technical problem:The object of the present invention is to provide a kind of thermoelectricity photoelectric energy based on nanometric PN junctions and nanometer thermoelectric heap
Collector, the thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap include that photocell and thermoelectric energy are collected
Device, photocell is to collect the luminous energy in environment, and thermoelectric energy collector is collecting the heat on central processing unit (CPU) surface
Can, collected energy will convert into power storage and get up for being supplied to the low power consumption component around central processing unit (CPU)
Electricity finally realizes green communications.
Technical solution：In order to solve the above technical problems, the present invention, which proposes one kind, being based on nanometric PN junctions and nanometer thermoelectric heap
Thermoelectricity photovoltaic energy collection device.Its structure mainly include N-type silicon substrate, matte, plating aluminium oxide film layer, substrate N-shaped doped region,
The doping of substrate p-type, silicon nitride layer, photocell electrode, photocell output pad, silica separation layer, nanometer thermoelectric heap, dioxy
SiClx protective layer, polyimide layer and metallic heat radiating plate.
Thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap is produced on the N types of long carrier lifetime
In silicon chip substrate, mainly formed by photocell and thermoelectric energy collector are integrated.Photocell is by N-type silicon chip substrate, matte, oxidation
Aluminium film plating layer, nanometric PN junctions, silicon nitride layer, photocell optoelectronic pole and photocell output pad are constituted, and wherein nanometric PN junctions are by serving as a contrast
Bottom N-shaped doped region, the doping of substrate p-type are constituted, and are photoelectricity hetero-junctions.Thermoelectric energy collector is by nanometer thermoelectric heap, silica
Protective layer, polyimide layer and metallic heat radiating plate are constituted, and wherein nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster, p-type polycrystalline
Silicon nanowires cluster, metal connecting line, polymethyl methacrylate and thermoelectricity export pad.Photocell and thermoelectric energy collector are by two
Silicon oxide protective layer is isolated.
Photronic substrate selects the N-type silicon chip of long carrier lifetime, and the lower surface of substrate is as light-receiving surface, using texture
The inverted pyramid suede structure of change, effect are to reduce the reflection of incident light；A layer specific thickness is coated on suede structure
Plating aluminium oxide film layer reduces bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；In the upper of battery
Surface is made the nano photoelectric PN junction of a cycle, the width of photoelectric PN junction of gel spin-coating method on N-type polycrystalline silicon substrate
Degree is nano-scale；Then a N-N is made+The Europe rice contact of type is for drawing optoelectronic pole.Then in photocell upper surface
Layer of silicon dioxide layer passivation layer is covered, and a series of electrode contact hole has been opened in specific region, for reducing upper surface
Surface recombination, interdigitated photocell electrode include base electrode and transmitting region electrode, made of metal interconnection layer, compared to pass
The electrode width of the photocell structure of system, upper surface is very big, on the one hand reduces the backside reflection of battery, on the other hand reduces
The dead resistance of battery is conducive to improve output performance.
Thermoelectric energy collector is mainly by horizontal positioned nanometer thermoelectric heap, polyimides thermal insulation layer and metallic heat radiating plate structure
At.Wherein horizontal nano thermoelectric pile is connected in series in sun divergent shape by multipair horizontal nano thermocouple, horizontal nano thermoelectricity
Heap is made of horizontal positioned N-type polycrystalline silicon nano line cluster and p-type polysilicon nano line cluster, and polysilicon nanowire cluster directly utilizes
Metal contact wires carry out electric appliance interconnection, and both ends are exported by metal pad, on a silicon substrate in the arrangement of horizontal sun divergent structure,
Metallic heat radiating plate is covered on the nanometer thermoelectric heap of center on substrate, has effectively achieved heat dissipation, while providing nanometer thermoelectric
Heap hot junction thermal field, increases the thermal coupling of nanometer thermoelectric heap and ambient enviroment；The surrounding of nanometer thermoelectric heap covers a strata acyl
Imine layer is isolated as thermal insulation layer, realization with the calorifics in nanometer thermoelectric heap hot junction；Also there is layer of silicon dioxide on nanometer thermoelectric heap
Layer is used as electrical apparatus insulation layer；In order to increase the stability of thermoelectric energy collector structure, poly- first is filled between nanometer thermoelectric idol
Base methyl acrylate.There is layer of silicon dioxide layer between thermoelectric energy collector and photocell, as electrical apparatus insulation layer.
Photronic operation principle is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics expands to N-type semiconductor
It dissipates, hole is spread to P-type semiconductor, is gathered in two electrode sections respectively, generates certain potential difference simultaneously in photoelectric yield
Pad output powers.It is opposite with photogenerated current there is also one due to output voltage other than photogenerated current when output power
It ties " dark current ", is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric energy collector is as follows：When in the thermoelectricity photoelectricity energy based on nanometric PN junctions and nanometer thermoelectric heap
It measures and applies certain temperature difference on the heat sink of collector, heat can be injected from hot junction face, after nanometer thermoelectric heap, finally from cold
End face is discharged, and certain Temperature Distribution is formed in thermoelectric energy collector.Since nanometer thermoelectric heap is there are certain thermal resistance,
The corresponding temperature difference is will produce between the cold and hot node of nanometer thermoelectric heap, the thermoelectricity based on Seebeck effect nanometer thermoelectric heap both ends
Output pad can export the potential directly proportional to the temperature difference, and power output can be achieved after connection load.
The thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap is used in central processing unit (CPU),
Heat sink based on nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap is attached to central processing unit (CPU)
Surface, the thermal energy to dissipate in working central processing unit (CPU) are collected, and can reduce the waste of the energy, improve energy profit
Use efficiency；Photronic light is face-up, for the light in environment of accepting, is captured to luminous energy, the energy of collection passes through
It after DC-DC conversion modules, is stored in battery, can be that the low power consumption component being arranged in around central processing unit (CPU) supplies
Electricity finally realizes green communications.
Advantageous effect：The present invention has the following advantages relative to existing generator：
1. the thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap of the present invention is with nanometric PN junctions and receives
Rice thermoelectric pile has the characteristics that small as generating element, while compared with traditional thermoelectricity photovoltaic energy collection device, having
Higher thermoelectric conversion efficiency；
2. using ripe CMOS technology and MEMS technology manufacture in technique, advantage have it is small, at low cost, can make in batches
It makes, and can realize single-chip integration with microelectronic circuit；
3. the single-chip integration of two kinds of collection of energy modes of thermoelectricity-photoelectricity is realized, under complicated ambient enviroment, two kinds of collections
Mode can be complementary to one another, collaboration power supply；
4. photocell uses all back-contact electrodes structure, opposite Traditional photovoltaic pool structure to be hindered with no shading loss, low electrode string
With the advantage interconnected convenient for device；
5. the thermoelectric energy collector of the thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap uses water
Parallel type structure, i.e. heat flow path are parallel to chip surface, and current path is parallel to chip surface so that the both ends of nanometer thermoelectric heap
With quite larger temperature difference, while the nanometer thermoelectric heap in chip plane, the making of IC compatible technologies can be used, have
Higher integration density and larger output voltage density；
6. photocell is solid state energy converter with thermoelectricity photovoltaic energy collection device, without movable member, reliability is high, makes
With long lifespan, Maintenance free, when work, not will produce noise；
7. all electrodes of the thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap are in same plane,
The complexity for avoiding similar via is electrically connected.
Description of the drawings
Fig. 1 be the present invention is based on the thermoelectricity photovoltaic energy collection device of nanometric PN junctions and nanometer thermoelectric heap in a computer centre at
Manage the application schematic diagram in device；
Fig. 2 is that the present invention is based on the photocell substrate P of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap
The overlooking structure diagram of type doped region；
Fig. 3 is that the present invention is based on the photocell substrate N of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap
The overlooking structure diagram of type doped region and substrate P-doped zone；
Fig. 4 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap in Fig. 3
In A-A ' to sectional view；
Fig. 5 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap in Fig. 4
On the basis of make silicon nitride layer after vertical view
Fig. 6 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap in Fig. 5
In B-B ' to sectional view；
Fig. 7 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap in Fig. 5
In C-C ' to sectional view；
Fig. 8 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap in Fig. 6
On the basis of make the vertical view after photocell electrode and photoelectric yield pad；
Fig. 9 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap in Fig. 8
In D-D ' to sectional view；
Figure 10 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap in Fig. 8
On the basis of deposit silicon dioxide layer, make nanometer thermoelectric heap after vertical view；
Figure 11 is that the present invention is based on the photocells of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap to scheme
E-E ' in 10 is to sectional view；
Figure 12 is that the present invention is based on the final vertical views of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap；
Figure 13 is that the present invention is based on the thermoelectricity photovoltaic energy collection devices of nanometric PN junctions and nanometer thermoelectric heap in Figure 12
F-F ' is to sectional view；
Figure includes：Central processing unit (CPU) 1, follow-up signal processing module 2 are based on nanometric PN junctions and nanometer thermoelectric heap
Thermoelectricity photovoltaic energy collection device 3, DC-DC conversion modules 4, low power consumption component 5, rechargeable battery 6, based on nanometric PN junctions and receiving
The thermoelectricity photovoltaic energy collection device 3 of rice thermoelectric pile includes photocell and thermoelectric energy collector, and photocell includes N-type silicon chip substrate
7, matte 8, plating aluminium oxide film layer 9, nanometric PN junctions, silicon nitride layer 12, photocell electrode 13, photoelectric yield pad 14, nanometer PN
Knot includes substrate n types doped region 10 and substrate p-type doping 11, and thermoelectric energy collector includes nanometer thermoelectric heap, the second titanium dioxide
Silicon layer 15, polyimide layer 16, metallic heat radiating plate 17, nanometer thermoelectric heap include N-type polycrystalline silicon nano line cluster 18, p-type polysilicon
Nano line cluster 19, metal connecting line 20, polymethyl methacrylate 21 and thermoelectricity export pad 22, and photocell and thermoelectric energy are collected
Device carries out electric isolation by the first silicon dioxide layer 23.
Specific implementation mode
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1, the present invention proposes a kind of thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap,
Its major function is that the luminous energy in the thermal energy and environment for collect central processing unit (CPU) 1 is powered to low power consumption component 5.By base
It is attached to central processing unit (CPU) in the metallic heat radiating plate 12 of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device 3 of nanometer thermoelectric heap
1 surface, the output termination follow-up signal processing module 2 of central processing unit (CPU) 1, is based on nanometric PN junctions and nanometer thermoelectric heap
Thermoelectricity photovoltaic energy collection device 3 by collect central processing unit (CPU) 1 thermal energy electric energy is converted by Seebeck effect, together
When collect environment in luminous energy be converted into electric energy, the electric energy of collection is then converted by direct current telecommunications by DC-DC conversion modules 4
Number, it is ultimately stored in rechargeable battery 6.Electric energy in rechargeable battery 6 may be implemented all to central processing unit (CPU) is arranged in
The low power consumption component power supply enclosed, finally realizes green communications.
Photronic composition is as follows.First the one side of N-type silicon chip substrate 7 make matte 8, plating aluminium oxide film layer 9, then
The substrate P-doped zone 11 of nanometric PN junctions is made in the another side of N-type silicon substrate 7, as shown in Figure 2.Then N-doped zone is made
10, as shown in Figure 3.The A-A ' of Fig. 3 is as shown in Figure 4 to sectional view.Then one layer of silicon nitride layer is deposited on N-type silicon chip substrate 7
12 are used as isolated protective layer, in order to extract photronic electrode, substrate N-shaped doped region 10, substrate on silicon nitride layer 8
The punching two ends of p-type doping 11, as shown in figure 5, its B-B ' is to sectional view as shown in fig. 6, C-C ' is as shown in Figure 7 to sectional view.
Then one layer of photocell electrode 13 and photoelectric yield pad 14 are deposited on silicon nitride layer 8,
As shown in figure 8, its D-D ' is as shown in Figure 9 to sectional view.
Referring to Figure 10, on the basis of Fig. 8, one layer of first silicon dioxide layer 23 is deposited as isolation, and trepanning goes out photoelectricity
The photoelectric yield pad 14 in pond.Thermoelectric energy collector is made in the first silicon dioxide layer 23.First in the first silica
Nanometer thermoelectric heap is made on layer 23, nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster 18, p-type polysilicon nano line cluster 19,
Metal connecting line 20, polymethyl methacrylate 21 and thermoelectricity export pad 22, and the first silica is arranged in horizontal divergence type
On layer 23, E-E ' is as shown in figure 11 to sectional view.Then one layer of second silicon dioxide layer 15 is deposited on nanometer thermoelectric heap, it is right
Nanometer thermoelectric heap is protected, and one block of metal-plate radiating plate 17 is covered among nanometer thermoelectric heap, has effectively achieved heat dissipation, is increased
The big thermal coupling of nanometer thermoelectric heap and ambient enviroment, the surrounding of nanometer thermoelectric heap cover a strata imide layer 16 play every
The effect of heat so that there are one temperature differences for the hot junction of thermocouple and cold end, and being based ultimately upon Seebeck effect has thermoelectrical potential from thermoelectricity
Pad 22 is exported to export.Its final figure is as shown in figure 12, and the F-F ' of Figure 12 is as shown in figure 13 to sectional view.
Nanometer thermoelectric heap in thermoelectricity photovoltaic energy collection device 3 based on nanometric PN junctions and nanometer thermoelectric heap is to more by N types
Crystal silicon nano line cluster 18 and p-type polysilicon nano line cluster 19 constitute the semiconductor arm of thermocouple, and polysilicon nanowire cluster contains
Number of nanowires be 50-200, a diameter of 1-100nm of polysilicon nanowire is highly 2-10um, N-type polycrystalline silicon nano wire
It is connected with metal connecting line 20 between cluster 18 and p-type polysilicon nano line cluster 19；It is based on nanometric PN junctions and nanometer thermoelectric in order to increase
The stability of 3 structure of thermoelectricity photovoltaic energy collection device of heap is filled with polymethyl methacrylate 21 between thermocouple；In nanometer
The surface of thermoelectric pile is covered with the second silicon dioxide layer 15 and plays the role of protection and electric isolation, and nanometer thermoelectric heap is in water
Flat divergence form arranges, and covers one block of metal-plate radiating plate 17 among nanometer thermoelectric heap, has effectively achieved heat dissipation, increase and receive
The thermal coupling of rice thermoelectric pile and ambient enviroment, the surrounding of nanometer thermoelectric heap cover a strata imide layer 16 and play heat-insulated work
With so that there are one temperature differences for the hot junction of nanometer thermoelectric heap and cold end, and being based ultimately upon Seebeck effect has thermoelectrical potential defeated from thermoelectricity
Go out the outputs of pad 22.
The operation principle of thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap is as follows：When will be based on receiving
The table of metallic heat radiating plate 17 central processors 1 in a computer of patch of the thermoelectricity photovoltaic energy collection device of rice PN junction and nanometer thermoelectric heap
When face, heat can be injected from based on the metallic heat radiating plate 17 of nanometric PN junctions and the thermoelectricity photovoltaic energy collection device of nanometer thermoelectric heap,
After nanometer thermoelectric heap, finally it is discharged from cold end face, and in the thermoelectricity photoelectric energy based on nanometric PN junctions and nanometer thermoelectric heap
Certain Temperature Distribution is formed on collector.Since there are certain thermal resistances for nanometer thermoelectric heap, in the cold and hot knot of nanometer thermoelectric heap
The corresponding temperature difference is will produce between point, the thermoelectricity output pad 22 based on Seebeck effect nanometer thermoelectric heap both ends can be exported and temperature
The directly proportional potential of difference；The photocell of the thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap can be collected simultaneously
Luminous energy in environment is simultaneously converted to electric energy, and exporting pad 14 by photo-electric is exported.The electric signal of output is passed through into DC-DC
Conversion module 4 is converted into direct current signal and is stored in rechargeable battery 6, final to realize green for powering to low power consumption component 5
Communication.
The preparation method of the thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap of the present invention is as follows：
1) select N-type silicon chip 7 as substrate, the doping concentration of phosphorus is 1 × 1015cm-3, resistivity is about 5 Ω cm, is made
Preceding carry out twin polishing, and impregnate in a solution of hydrofluoric acid, remove the impurity such as metallic particles；
2) matte 8 is made using a kind of additive making herbs into wool optimize technique, the volume ratio of HF/HNO3 is 1 in Woolen-making liquid:2~
1:6 (example, 1:3,1:4) it is 6~25 DEG C of (examples 6 that, dispersant, which is less than 0.1% (example 0.09%, 0.05%, 0.01%) corrosion temperature,
DEG C, 15 DEG C, 25 DEG C), about 4~5 μm of silicon chip thinning single surface amount；
3) deposit prepares one layer of plating aluminium oxide film layer 9；
4) nano modification technique is used to carry out the modification cleaning of surface microcell, nano modification technique is to contain organic base and leaching
Moisten the silicon chip after the alkaline aqueous solution processing diffusion of agent, it is alkylammonium to remove the microdefect of silicon chip surface and objectionable impurities organic base
Class, the weight percentage of organic base in aqueous solution are 0.1~10% (example 0.1%, 5%, 10%)；Size is water-soluble
Weight percentage in liquid is less than 0.1% (example 0.09%, 0.05%, 0.01%).When silicon chip is handled in this alkaline solution
Temperature be 25~85 DEG C (25 DEG C, 55 DEG C, 85 DEG C of examples), the time be 30 seconds~15 minutes (example 30 seconds, 5 minutes, 15 minutes).
5) porous anodic alumina template is used for light by utilizing two step anodic oxidation electrochemical processes to obtain on supporting layer
The doping of electric solar energy nano array structure.
6) zinc acetate [Zn (CH3COO) 22H20] is used as zinc source, and zinc acetate and ethanol amine are dissolved in 200mL in proportion
Ethylene glycol monomethyl ether and be sufficiently stirred, place at room temperature be aged 3~5 days formed gel.Porous anodic alumina template is shifted
Print is obtained to silicon substrate, gel is thrown to by surface of silicon using spin-coating method, 3-9 layers of spin coating is put into baking after every 1 layer of spin coating
Oven for baking makes extra solution evaporation, is conducive to the generation of ZnO film.It is finally putting into subliming furnace at 450 DEG C of high warms
Reason, drying form good ZnO film, obtain the substrate N-shaped doped region 10 of solar energy electrical part nano array structure；
7) porous anodic alumina template is transferred to silicon substrate and obtains print, (e.g., p-type dopant is carried out to print
Boron) it adulterates, obtain the substrate P-doped zone of solar energy electrical part nano array structure.
8) it uses pecvd process to deposit silicon nitride and the photoetching molding of one layer of 100nm, as silicon nitride layer 12, and exposes
Go out electrode contact region；
9) layer gold and the photoetching for evaporating one layer of 2 μ m-thick, form photocell electrode 13；
10) pecvd process is used to deposit the first silicon dioxide layer 23, as electrical insulator layer；
11) low-pressure chemical vapor phase deposition (LPCDV) technique is used to grow a layer thickness for 2 μm of polysilicon；
12) it uses LPCVD techniques growth layer of silicon dioxide as mask layer, deep-UV lithography, shape is carried out to polysilicon
At polysilicon nanometer cable architecture；
13) doping of N-type phosphonium ion is carried out to the corresponding region of polysilicon nanowire respectively and p-type boron ion is adulterated, respectively
Form N-type polycrystalline silicon nano line cluster 18 and p-type polysilicon nano line cluster 19；
14) gap between one strata methyl methacrylate 21 of spin coating filling thermocouple, improves the steady of electric generator structure
It is qualitative；
15) layer gold that evaporation a layer thickness is 0.3 μm, stripping method molding, as metal contact wires 20 on nanometer thermoelectric heap；
16) two silicon dioxide layer 15 of pecvd process growth regulation is used, thickness is 0.1 μm, as dielectric insulation layer；
17) metallic aluminium that plating a layer thickness is 1 μm, the metallic heat radiating plate 17 as device.
18) polyimide layer 16 that deposit a layer thickness is 1 μm, the nanometer thermoelectric heap outer insulative layer as device.
Distinguish whether be the structure standard it is as follows：
The thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap of the present invention includes photocell and thermoelectricity
Energy harvester, photocell include N-type silicon chip substrate 7, matte 8, plating aluminium oxide film layer 9, substrate N-shaped doped region 10, substrate p-type
Doping 11, silicon nitride layer 12, photocell electrode 13, photoelectric yield pad 14, thermoelectric energy collector includes nanometer thermoelectric heap, the
Two silicon dioxide layers 15, polyimide layer 16, metallic heat radiating plate 17, nanometer thermoelectric heap include N-type polycrystalline silicon nano line cluster 18, P
Type polysilicon nanowire cluster 19, metal connecting line 20, polymethyl methacrylate 21 and thermoelectricity export pad 22, photocell and thermoelectricity
Energy harvester carries out electric isolation by the first silicon dioxide layer 23.Nanometer thermoelectric is occasionally connected in series, and thermoelectrical potential is exported by thermoelectricity
Pad 22 is exported, and nanometer thermoelectric heap is arranged in horizontal divergence type, and the centre of nanometer thermoelectric heap covers one layer of heat dissipation metal
Hot junction heat-conducting layer of the plate 17 as nanometer thermoelectric heap, the surrounding of nanometer thermoelectric heap cover a strata imide layer 16 conduct and receive
The cold end thermal insulation layer of rice thermoelectric pile.Polymethyl methacrylate 21 is used to fill the gap between nanometer thermoelectric idol, improves energy
The stability of collector structure.Thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap is with nanometric PN junctions and receives
Rice thermoelectric pile as generating element, have the characteristics that it is small, while compared with traditional thermoelectricity photovoltaic energy collection device, nanometer
The thermal conductivity of thermoelectric pile is far below conventional bulk, and there is higher thermoelectric conversion efficiency, the energy of collection to be converted by DC-DC
The electric energy of collection is converted into DC signal by module 4, is ultimately stored in rechargeable battery 6.Electricity in rechargeable battery 6 can be real
The power supply for now giving low power consumption component 5, finally realizes green communications.
The structure for meeting conditions above is considered as the thermoelectricity photoelectricity energy based on nanometric PN junctions and nanometer thermoelectric heap of the present invention
Measure collector.
Claims (3)
1. a kind of thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap, it is characterised in that：It is described based on
The thermoelectricity photovoltaic energy collection device of nanometric PN junctions and nanometer thermoelectric heap includes photocell and thermoelectric energy collector；Photocell includes
N-type silicon chip substrate (7), matte (8), plating aluminium oxide film layer (9), nanometric PN junctions, silicon nitride layer (12), photocell electrode (13),
Photoelectric yield pad (14), nanometric PN junctions include substrate N-shaped doped region (10) and substrate p-type doping (11), and the size of PN junction is to receive
The rice order of magnitude；Thermoelectric energy collector includes nanometer thermoelectric heap, the second silicon dioxide layer (15), polyimide layer (16), metal
Heat sink (17), nanometer thermoelectric heap include N-type polycrystalline silicon nano line cluster (18), p-type polysilicon nano line cluster (19), metal connecting line
(20), polymethyl methacrylate (21) and thermoelectricity output pad (22)；The photocell and thermoelectric energy collector is by first
Silicon dioxide layer (23) carries out electric isolation, and the energy of collection exports pad (22) by photoelectric yield pad (14) and thermoelectricity and connects
To DC-DC conversion modules (4)；The energy harvester major function is to collect the thermal energy and environment of central processing unit (CPU) (1)
In luminous energy give low power consumption component (5) power supply；The energy of collection is converted the electric energy of collection by DC-DC conversion modules (4)
It at DC signal, is ultimately stored in rechargeable battery (6), the electricity in rechargeable battery (6) may be implemented to give low power consumption component
(5) power supply.
2. a kind of thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap according to claim 1,
It is characterized in that：The number of nanowires that N-type polycrystalline silicon nano line cluster (18) and p-type polysilicon nano line cluster (19) contain is 50-
200,：The polysilicon nanowire of N-type polycrystalline silicon nano line cluster (18) and p-type polysilicon nano line cluster (19) is by deep 0 ultraviolet photolithographic
It is formed, a diameter of 1-100nm is highly 2-10um；N-type polycrystalline silicon nano line cluster (18) and p-type polysilicon nano line cluster (19)
Between be attached using metal contact wires (20).
3. a kind of thermoelectricity photovoltaic energy collection device based on nanometric PN junctions and nanometer thermoelectric heap according to claim 1,
It is characterized in that：Poly-methyl methacrylate is filled between N-type polycrystalline silicon nano line cluster (18) and p-type polysilicon nano line cluster (19)
Ester (21) plays the high stability of energy harvester structure.
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