CN108400749A - Horizontal divergence type nanometer thermoelectric photovoltaic energy collection device - Google Patents
Horizontal divergence type nanometer thermoelectric photovoltaic energy collection device Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention, the luminous energy being mainly used in the thermal energy and environment for collecting central processing unit (CPU) give the low power consumption component power supply being distributed in around central processing unit (CPU).Horizontal divergence type nanometer thermoelectric photovoltaic energy collection device is even as thermoelectric generation elements using nanometer thermoelectric, have the characteristics that small, simultaneously compared with traditional thermoelectric energy collector, the thermal conductivity of nanometer thermoelectric idol is far below conventional bulk, with more higher thermoelectric conversion efficiency, then the energy being collected into is converted into DC signal by DC DC conversion modules, be ultimately stored in rechargeable battery, the electric energy in rechargeable battery may be implemented to the power supply of low power consumption component.The horizontal divergence type nanometer thermoelectric photovoltaic energy collection device is produced on N-type silicon chip substrate, including photocell and thermoelectric energy collector, and the two carries out electric isolation by layer of silicon dioxide layer.
Description
Technical field
The present invention proposes a kind of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device, belongs to microelectromechanical systems
(MEMS) technical field.
Background technology
As the important component of generation information technology, Internet of Things plays an increasingly important role.It is mobile whole
End, central processor CPU especially therein is in information exchange and communication process, required data to be processed, instruction control
It is more and more.Lead to its power consumption relative increase in the demand of super powerful calculating ability, and it is serious to generate heat, efficiency is the bottom of compared with.Center
The heat that processor distributes when working not only causes its temperature to increase, and affects normal work, also creates the waste of energy.
Using the even thermoelectric energy collector as generating element of nanometer thermoelectric, have the characteristics that it is small, while with tradition
Thermoelectric energy collector compare, the thermal conductivity of nanometer thermoelectric idol is far below conventional bulk, has higher thermoelectric conversion effect
Rate, the thermal energy to dissipate in can working central processing unit are collected again, and the luminous energy being collected simultaneously in environment collects generation
Electric energy is stored in by DC-DC conversions in battery, can not only be improved the service efficiency of energy, be reduced the waste of the energy, together
When be alternatively the low power consumption component power supply being arranged in around central processing unit, the final purpose for realizing green communications..
Invention content
Technical problem:The object of the present invention is to provide a kind of horizontal divergence type nanometer thermoelectric photovoltaic energy collection devices, horizontal
Divergence form nanometer thermoelectric photovoltaic energy collection device includes photocell and thermoelectric energy collector, and photocell is collecting in environment
Luminous energy, for thermoelectric energy collector to collect the thermal energy on central processing unit (CPU) surface, collected energy will convert into electricity
It can store for powering to the low power consumption component around central processing unit (CPU), finally realize green communications.
Technical solution：In order to solve the above technical problems, the present invention proposes a kind of horizontal divergence type nanometer thermoelectric photoelectricity energy
Measure collector.Its structure mainly include N-type silicon substrate, matte, plating aluminium oxide film layer, substrate N-shaped doped region, substrate p-type doping,
Silicon nitride layer, photocell output pad, silica separation layer, nanometer thermoelectric heap, silicon dioxide layer of protection, gathers photocell electrode
Imide layer and metallic heat radiating plate..
Horizontal divergence type nanometer thermoelectric photovoltaic energy collection device is produced on the N-type silicon chip substrate of long carrier lifetime, main
It to be formed by photocell and thermoelectric energy collector are integrated.Photocell is by N-type silicon chip substrate, matte, plating aluminium oxide film layer, substrate
N-shaped doped region, the doping of substrate p-type, silicon nitride layer, photocell optoelectronic pole and photocell output pad are constituted.Thermoelectric energy collector
It is made of nanometer thermoelectric heap, silicon dioxide layer of protection, polyimide layer and metallic heat radiating plate.Wherein nanometer thermoelectric heap includes N-type
Polysilicon nanowire cluster, p-type polysilicon nano line cluster, metal connecting line, polymethyl methacrylate and thermoelectricity export pad.Photoelectricity
Pond and thermoelectric energy collector are isolated by silicon dioxide layer of protection.
Photronic substrate selects the N-type silicon chip of long carrier lifetime, and the lower surface of substrate is as light-receiving surface, using texture
The inverted pyramid suede structure of change, effect are to reduce the reflection of incident light；A layer specific thickness is coated on suede structure
Plating aluminium oxide film layer reduces bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；It is adopted in lower surface
A N-N+ height is made with ion injection method to tie, be otherwise known as back of the body electric field structure, for reducing surface recombination；In battery
Upper surface, non-crystalline silicon and nanometer silicon carbide film be alternately arranged composition superlattice structure, is covered in the top of superlattice structure
The monocrystalline silicon thin film of one layer of extension, is partly P-doped zone, is partly N-doped zone as photronic emitter region, is used
In forming Ohmic contact with base electrode, layer of silicon dioxide layer passivation layer is covered on monocrystalline silicon thin film, and in specific region
A series of electrode contact hole is opened, the surface recombination for reducing upper surface, interdigitated photocell electrode includes base electrode
It with transmitting region electrode, being made of metal interconnection layer, compares traditional photocell structure, the electrode width of upper surface is very big, and one
Aspect reduces the backside reflection of battery, on the other hand reduces the dead resistance of battery, is conducive to improve output performance.
Thermoelectric energy collector is mainly by horizontal positioned nanometer thermoelectric heap, polyimides thermal insulation layer and metallic heat radiating plate structure
At.Wherein horizontal nano thermoelectric pile is connected in series in sun divergent shape by multipair horizontal nano thermocouple, horizontal nano thermoelectricity
Even to be made of horizontal positioned N-type polycrystalline silicon nano line cluster and p-type polysilicon nano line cluster, polysilicon nanowire cluster directly utilizes
Metal contact wires carry out electric appliance interconnection, and both ends are exported by metal pad, on a silicon substrate in the arrangement of horizontal sun divergent structure,
Metallic heat radiating plate is covered on the nanometer thermoelectric heap of center on substrate, has effectively achieved heat dissipation, while providing nanometer thermoelectric
Heap hot junction thermal field, increases the thermal coupling of nanometer thermoelectric heap and ambient enviroment；The surrounding of nanometer thermoelectric idol covers a strata acyl
Imine layer is isolated as thermal insulation layer, realization with the calorifics in nanometer thermoelectric heap hot junction；Also there is layer of silicon dioxide on nanometer thermoelectric heap
Layer is used as electrical apparatus insulation layer；In order to increase the stability of thermoelectric energy collector structure, poly- first is filled between nanometer thermoelectric idol
Base methyl acrylate.There is layer of silicon dioxide layer between thermoelectric energy collector and photocell, as electrical apparatus insulation layer.
Photronic operation principle is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics expands to N-type semiconductor
It dissipates, hole is spread to P-type semiconductor, is gathered in two electrode sections respectively, generates certain potential difference simultaneously in photoelectric yield
Pad output powers.It is opposite with photogenerated current there is also one due to output voltage other than photogenerated current when output power
It ties " dark current ", is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric energy collector is as follows：When dissipating in horizontal divergence type nanometer thermoelectric photovoltaic energy collection device
Applying certain temperature difference on hot plate, heat can be injected from hot junction face, after nanometer thermoelectric heap, be finally discharged from cold end face, and
Certain Temperature Distribution is formed in thermoelectric energy collector.Since there are certain thermal resistances for nanometer thermoelectric heap, in nanometer thermoelectric
The corresponding temperature difference is will produce between the cold and hot node of heap, the thermoelectricity based on Seebeck effect nanometer thermoelectric heap both ends exports pad meetings
Power output can be achieved after connection load in the output potential directly proportional to the temperature difference.
The horizontal divergence type nanometer thermoelectric photovoltaic energy collection device is used in central processing unit (CPU), by horizontal divergence type
The heat sink of nanometer thermoelectric photovoltaic energy collection device is attached to the surface of central processing unit (CPU), to central processing unit (CPU) work
The thermal energy to dissipate in work is collected, and can reduce the waste of the energy, improves efficiency of energy utilization；Photronic light-receiving surface court
On, for the light in environment of accepting, luminous energy is captured, after the energy of collection is by DC-DC conversion modules, is stored in
In battery, it can be the low power consumption component power supply being arranged in around central processing unit (CPU), finally realize green communications.
Advantageous effect：The present invention has the following advantages relative to existing generator：
1. the horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention is even as thermoelectric power generation member using nanometer thermoelectric
Part, has the characteristics that small, while compared with traditional thermoelectric energy collector, the thermal conductivity of nanometer thermoelectric idol is far below passing
System body material, has higher thermoelectric conversion efficiency；
2. using ripe CMOS technology and MEMS technology manufacture in technique, advantage have it is small, at low cost, can make in batches
It makes, and can realize single-chip integration with microelectronic circuit；
3. the single-chip integration of two kinds of collection of energy modes of thermoelectricity-photoelectricity is realized, under complicated ambient enviroment, two kinds of collections
Mode can be complementary to one another, collaboration power supply；
4. photocell uses all back-contact electrodes structure, opposite Traditional photovoltaic pool structure to be hindered with no shading loss, low electrode string
With the advantage interconnected convenient for device；
5. the thermoelectric energy collector of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device uses horizontal type structure, i.e., hot
Flow path is parallel to chip surface, and current path is parallel to chip surface so that the both ends of nanometer thermoelectric heap have quite larger
Temperature difference, while the nanometer thermoelectric heap in the chip plane can be used the making of IC compatible technologies, has higher integrated close
Degree and larger output voltage density；
6. photocell is solid state energy converter with thermoelectricity photovoltaic energy collection device, without movable member, reliability is high, makes
With long lifespan, Maintenance free, when work, not will produce noise；
7. all electrodes of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device in same plane, avoid similar mistake
The complexity in hole is electrically connected.
Description of the drawings
Fig. 1 is the application in horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention in a computer central processor
Schematic diagram；
Fig. 2 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention is making matte, plated film, light
Overlooking structure diagram after electrically doped；
Fig. 3 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention is making matte, plated film, light
A-A ' after electrically doped is to sectional view；
Fig. 4 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention makes on the basis of Fig. 4
Vertical view after silicon nitride layer；
Fig. 5 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention makes on the basis of Fig. 4
B-B ' after silicon nitride layer is to sectional view；
Fig. 6 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention makes on the basis of Fig. 4
C-C ' after silicon nitride layer is to sectional view；
Fig. 7 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention makes on the basis of Fig. 6
Vertical view after photocell electrode and photoelectric yield pad；
Fig. 8 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention makes on the basis of Fig. 6
D-D ' after photocell electrode and photoelectric yield pad is to sectional view；
Fig. 9 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention deposits on the basis of Fig. 8
Silicon dioxide layer makes the vertical view after nanometer thermoelectric heap；
Figure 10 is that the photocell of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention deposits on the basis of Fig. 8
Silicon dioxide layer, make nanometer thermoelectric heap after E-E ' to sectional view；
Figure 11 be horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention final vertical view (polyimide layer with
10%) transparency of metallic heat radiating plate is set as；
Figure 12 is the F-F ' of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention to sectional view；
Figure includes：Central processing unit (CPU) 1, follow-up signal processing module 2, horizontal divergence type nanometer thermoelectric photoelectricity energy
Measure collector 3, DC-DC conversion modules 4, low power consumption component 5, rechargeable battery 6, horizontal divergence type nanometer thermoelectric photoelectric energy receipts
Storage 3 includes photocell and thermoelectric energy collector, and photocell includes N-type silicon chip substrate 7, matte 8, plating aluminium oxide film layer 9, lining
Bottom N-shaped doped region 10, substrate p-type doping 11, silicon nitride layer 12, photocell electrode 13, photoelectric yield pad 14, thermoelectric energy are received
Storage includes nanometer thermoelectric heap, and the second silicon dioxide layer 15, polyimide layer 16, metallic heat radiating plate 17, nanometer thermoelectric heap includes N
Type polysilicon nanowire cluster 18, p-type polysilicon nano line cluster 19, metal connecting line 20, polymethyl methacrylate 21 and thermoelectricity are defeated
Go out pad 22, photocell and thermoelectric energy collector and electric isolation is carried out by the first silicon dioxide layer 23.
Specific implementation mode
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1, the present invention proposes a kind of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device, and major function is
The luminous energy collected in the thermal energy and environment of central processing unit (CPU) 1 is powered to low power consumption component 5.By horizontal divergence type nanometer
The metallic heat radiating plate 12 of thermoelectricity photovoltaic energy collection device 3 is attached to the surface of central processing unit (CPU) 1, central processing unit (CPU)
1 output termination follow-up signal processing module 2, horizontal divergence type nanometer thermoelectric photovoltaic energy collection device 3 will be collected in computer
The thermal energy of central processor 1 is converted into electric energy by Seebeck effect, and the luminous energy being collected simultaneously in environment is converted into electric energy, then leads to
It crosses DC-DC conversion modules 4 and the electric energy of collection is converted into DC signal, be ultimately stored in rechargeable battery 6.Rechargeable battery 6
In electric energy may be implemented to the low power consumption component power supply being arranged in around central processing unit (CPU), it is final to realize that green is logical
Letter.
Referring to Fig. 2, photronic composition is as follows.First matte 8, plating aluminium oxide film are made in the one side of N-type silicon chip substrate 7
Layer 9, substrate N-shaped doped region 10, the doping 11, A-A ' of substrate p-type are as shown in Figure 3 to sectional view.Then in N-type silicon chip substrate 7
Upper one layer of silicon nitride layer 12 of deposit is used as isolated protective layer, in order to extract photronic electrode, the lining on silicon nitride layer 8
Bottom N-shaped doped region 10, substrate p-type adulterate 11 punching two ends, as shown in figure 4, its B-B ' is to sectional view as shown in figure 4, C-C '
It is as shown in Figure 5 to sectional view.Then one layer of photocell electrode 13 and photoelectric yield pad 14 are deposited on silicon nitride layer 8, such as Fig. 6
Shown, D-D ' is as shown in Figure 7 to sectional view.
Referring to Fig. 8, on the basis of Fig. 7, one layer of first silicon dioxide layer 23 is deposited as isolation, and trepanning goes out photocell
Photoelectric yield pad 14.Thermoelectric energy collector is made in the first silicon dioxide layer 23.First in the first silicon dioxide layer
Nanometer thermoelectric heap is made on 23, nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster 18, p-type polysilicon nano line cluster 19, metal
Line 20, polymethyl methacrylate 21 and thermoelectricity export pad 22, and the first silicon dioxide layer 23 is arranged in horizontal divergence type
On, E-E ' is as shown in Figure 9 to sectional view.Then one layer of second silicon dioxide layer 15 is deposited on nanometer thermoelectric heap, to nanometer
Thermoelectric pile is protected, and one block of metal-plate radiating plate 17 is covered among nanometer thermoelectric heap, heat dissipation is had effectively achieved, increases
The thermal coupling of nanometer thermoelectric heap and ambient enviroment, the surrounding of nanometer thermoelectric heap cover a strata imide layer 16 play it is heat-insulated
Effect so that there are one temperature differences for the hot junction of thermocouple and cold end, and being based ultimately upon Seebeck effect has thermoelectrical potential to be exported from thermoelectricity
Pad 22 is exported.Its final figure is as shown in Figure 10, and the F-F ' of Figure 10 is as shown in figure 11 to sectional view.
Nanometer thermoelectric couple in horizontal divergence type nanometer thermoelectric photovoltaic energy collection device 3 is by N-type polycrystalline silicon nano line cluster
18 and p-type polysilicon nano line cluster 19 constitute the semiconductor arm of thermocouple, the number of nanowires that polysilicon nanowire cluster contains
For 50-200, a diameter of 1-100nm of polysilicon nanowire is highly 2-10um, N-type polycrystalline silicon nano line cluster 18 and p-type polycrystalline
It is connected with metal connecting line 20 between silicon nanowires cluster 19；In order to increase by 3 knot of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device
The stability of structure is filled with polymethyl methacrylate 21 between thermocouple；In the surface of nanometer thermoelectric heap, it is covered with second
Silicon dioxide layer 15 plays the role of protection and electric isolation, and nanometer thermoelectric is occasionally arranged in horizontal divergence type, in nanometer thermoelectric heap
Between cover one block of metal-plate radiating plate 17, have effectively achieved heat dissipation, increase the thermal coupling of nanometer thermoelectric heap and ambient enviroment
It closes, the surrounding of nanometer thermoelectric heap covers a strata imide layer 16 and plays heat-insulated effect so that the hot junction of nanometer thermoelectric idol
There are one temperature differences with cold end, and being based ultimately upon Seebeck effect has thermoelectrical potential to be exported from thermoelectricity output pad 22.
The operation principle of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device is as follows：When by horizontal divergence type nanometer thermoelectric
Photovoltaic energy collection device metallic heat radiating plate patch 17 in a computer the surface of central processor 1 when, heat can be from horizontal divergence type
The metallic heat radiating plate 17 of nanometer thermoelectric photovoltaic energy collection device injects, and after nanometer thermoelectric heap, is finally discharged from cold end face, and
Certain Temperature Distribution is formed on horizontal divergence type nanometer thermoelectric photovoltaic energy collection device.Since nanometer thermoelectric heap exists centainly
Thermal resistance, will produce the corresponding temperature difference between the cold and hot node of nanometer thermoelectric heap, be based on Seebeck effect nanometer thermoelectric heap two
The thermoelectricity output pad 22 at end can export the potential directly proportional to the temperature difference；Horizontal divergence type nanometer thermoelectric photovoltaic energy collection simultaneously
The photocell of device can collect the luminous energy in environment and be converted to electric energy, and exporting pad 14 by photo-electric is exported.It will output
Electric signal direct current signal be converted by DC-DC conversion modules 4 be stored in rechargeable battery 6, for low power consumption component 5
Power supply, finally realizes green communications.
The preparation method of the horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention is as follows：
1) select N-type silicon chip 7 as substrate, the doping concentration of phosphorus is 1 × 1015cm-3, resistivity is about 5 Ω cm, is made
Preceding carry out twin polishing, and impregnate in a solution of hydrofluoric acid, remove the impurity such as metallic particles；
2) matte 8 is made using a kind of additive making herbs into wool optimize technique, the volume ratio of HF/HNO3 is 1 in Woolen-making liquid:2~
1:6 (example, 1:3,1:4) it is 6~25 DEG C of (examples 6 that, dispersant, which is less than 0.1% (example 0.09%, 0.05%, 0.01%) corrosion temperature,
DEG C, 15 DEG C, 25 DEG C), about 4~5 μm of silicon chip thinning single surface amount；
3) deposit prepares one layer of plating aluminium oxide film layer 9；
4) nano modification technique is used to carry out the modification cleaning of surface microcell, nano modification technique is to contain organic base and leaching
Moisten the silicon chip after the alkaline aqueous solution processing diffusion of agent, it is alkylammonium to remove the microdefect of silicon chip surface and objectionable impurities organic base
Class, the weight percentage of organic base in aqueous solution are 0.1~10% (example 0.1%, 5%, 10%)；Size is in aqueous solution
In weight percentage be less than 0.1% (example 0.09%, 0.05%, 0.01%).When silicon chip is handled in this alkaline solution
Temperature is 25~85 DEG C (25 DEG C, 55 DEG C, 85 DEG C of examples), and the time is 30 seconds~15 minutes (example 30 seconds, 5 minutes, 15 minutes).
5) porous anodic alumina template is used for light by utilizing two step anodic oxidation electrochemical processes to obtain on supporting layer
The doping of electric solar energy nano array structure.
6) zinc acetate [Zn (CH3COO) 22H20] is used as zinc source, and zinc acetate and ethanol amine are dissolved in 200mL's in proportion
Ethylene glycol monomethyl ether is simultaneously sufficiently stirred, and is placed and is aged 3~5 days formation gels at room temperature.Porous anodic alumina template is transferred to
Silicon substrate obtains print, gel is thrown to surface of silicon using spin-coating method, 3-9 layers of spin coating is put into baking box after every 1 layer of spin coating
Middle baking makes extra solution evaporation, is conducive to the generation of ZnO film.450 DEG C of high-temperature heat treatments in subliming furnace are finally putting into,
Drying forms good ZnO film, obtains the substrate N-shaped doped region 10 of solar energy electrical part nano array structure；
7) porous anodic alumina template is transferred to silicon substrate and obtains print, p-type dopant (e.g., boron) is carried out to print
It adulterates, obtains the substrate P-doped zone of solar energy electrical part nano array structure.
8) it uses pecvd process to deposit silicon nitride and the photoetching molding of one layer of 100nm, as silicon nitride layer 12, and exposes
Go out electrode contact region；
9) layer gold and the photoetching for evaporating one layer of 2 μ m-thick, form photocell electrode 13；
10) pecvd process is used to deposit the first silicon dioxide layer 23, as electrical insulator layer；
11) low-pressure chemical vapor phase deposition (LPCDV) technique is used to grow a layer thickness for 2 μm of polysilicon；
12) it uses LPCVD techniques growth layer of silicon dioxide as mask layer, deep-UV lithography, shape is carried out to polysilicon
At polysilicon nanometer cable architecture；
13) doping of N-type phosphonium ion is carried out to the corresponding region of polysilicon nanowire respectively and p-type boron ion is adulterated, respectively
Form N-type polycrystalline silicon nano line cluster 18 and p-type polysilicon nano line cluster 19；
14) gap between one strata methyl methacrylate 21 of spin coating filling thermocouple, improves the steady of electric generator structure
It is qualitative；
15) layer gold that evaporation a layer thickness is 0.3 μm, stripping method molding, as metal contact wires 20 on nanometer thermoelectric heap；
16) two silicon dioxide layer 15 of pecvd process growth regulation is used, thickness is 0.1 μm, as dielectric insulation layer；
17) metallic aluminium that plating a layer thickness is 1 μm, the metallic heat radiating plate 17 as device.
18) polyimide layer 16 that deposit a layer thickness is 1 μm, the nanometer thermoelectric idol outer insulative layer as device.
Distinguish whether be the structure standard it is as follows：
The horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention includes photocell and thermoelectric energy collector, light
Battery includes N-type silicon chip substrate 7, matte 8, plating aluminium oxide film layer 9, substrate N-shaped doped region 10, substrate p-type doping 11, silicon nitride
Layer 12, photocell electrode 13, photoelectric yield pad 14, thermoelectric energy collector includes nanometer thermoelectric heap, the second silicon dioxide layer
15, polyimide layer 16, metallic heat radiating plate 17, nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster 18, p-type polysilicon nanometer
Line cluster 19, metal connecting line 20, polymethyl methacrylate 21 and thermoelectricity export pad 22, photocell and thermoelectric energy collector by
First silicon dioxide layer 23 carries out electric isolation.Thermocouple is connected in series, and thermoelectrical potential is exported by thermoelectricity output pad 22, is received
Rice thermoelectric pile is arranged in horizontal divergence type, and the centre of nanometer thermoelectric heap covers one layer of metallic heat radiating plate 17 and is used as nanometer thermoelectric heap
Hot junction heat-conducting layer, it is heat-insulated as the cold end of nanometer thermoelectric heap that the surrounding of nanometer thermoelectric heap covers a strata imide layer 16
Layer.Polymethyl methacrylate 21 is used to fill the gap between thermocouple, improves the stability of energy harvester structure.It is horizontal
Divergence form nanometer thermoelectric photovoltaic energy collection device is even as generating element using nanometer thermoelectric, have the characteristics that it is small, while with
Traditional thermoelectric energy collector is compared, and the thermal conductivity of nanometer thermoelectric idol is far below conventional bulk, and there is higher thermoelectricity to turn
Change efficiency, the electric energy of collection is converted into DC signal by DC-DC conversion modules 4, is ultimately stored on and fills by the energy of collection
In battery 6.Electricity in rechargeable battery 6 may be implemented, to the power supply of low power consumption component 5, finally to realize green communications.
The structure for meeting conditions above is considered as the horizontal divergence type nanometer thermoelectric photovoltaic energy collection device of the present invention.
Claims (2)
1. a kind of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device, it is characterised in that：The horizontal divergence type nanometer heat
Electric light electric flux collector includes photocell and thermoelectric energy collector；Photocell includes N-type silicon chip substrate (7), matte (8),
Plating aluminium oxide film layer (9), substrate N-shaped doped region (10), substrate p-type adulterate (11), silicon nitride layer (12), photocell electrode
(13), (14) photoelectric yield pad；Thermoelectric energy collector includes nanometer thermoelectric heap, the second silicon dioxide layer (15), polyimides
Layer (16), metallic heat radiating plate (17), nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster (18), p-type polysilicon nano line cluster
(19), metal connecting line (20), polymethyl methacrylate (21) and thermoelectricity output pad (22)；Photocell and thermoelectric energy are collected
Device carries out electric isolation by the first silicon dioxide layer (23)；The horizontal divergence type nanometer thermoelectric photovoltaic energy collection device is collected
Energy pad (22) exported by photoelectric yield pad (14) and thermoelectricity connect to DC-DC conversion modules (4)；The energy harvester
Major function is that the luminous energy in the thermal energy and environment for collect central processing unit (CPU) (1) is powered to low power consumption component (5)；Water
Flat divergence form nanometer thermoelectric photovoltaic energy collection device (3) is by the energy of collection by DC-DC conversion modules (4) by the electric energy of collection
It is converted into DC signal, is ultimately stored in rechargeable battery (6), the electricity in rechargeable battery (6) may be implemented to give low power consumption member
The power supply of device (5)；The number of nanowires that N-type polycrystalline silicon nano line cluster (18) and p-type polysilicon nano line cluster (19) contain is
50-200, polysilicon nanowire are formed by deep 0 ultraviolet photolithographic, and a diameter of 1-100nm is highly 2-10um；N-type polycrystalline silicon nanometer
It is attached using metal contact wires (20) between line cluster (18) and p-type polysilicon nano line cluster (19).
2. a kind of horizontal divergence type nanometer thermoelectric photovoltaic energy collection device according to claim 1, it is characterised in that：N-type
It is filled with polymethyl methacrylate (21) between polysilicon nanowire cluster (18) and p-type polysilicon nano line cluster (19), plays height
The stability of energy harvester structure.
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