CN108540046A - Integrated nano energy getter and preparation method in self energizing wireless sensing node - Google Patents
Integrated nano energy getter and preparation method in self energizing wireless sensing node Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035245—Superlattices; Multiple quantum well structures characterised by amorphous semiconductor layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
- H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table, e.g. Si-SiGe superlattices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
The substrate of integrated nano energy getter and preparation method in the self energizing wireless sensing node of the present invention, device is N-type silicon chip, and being made on photronic light-receiving surface has suede structure, the first silicon nitride film and back of the body electric field structure；The monocrystalline silicon thin film of one layer of extension is covered on superlattice structure, is partly P-doped zone domain, is partly n-type doping region；It deposited layer of silicon dioxide layer passivation layer on monocrystalline silicon thin film, and a series of electrode contact hole opened in specific region, be connected with photronic base electrode and transmitting region electrode；The second silicon nitride film is separated between thermoelectric generator and photocell, critical piece thermoelectric pile is to be connected in series by being permitted polysilicon nanowire thermocouple, while having made multiple thermoelectric pile output electrodes；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, the top of cavity is metallic plate.
Description
Technical field
The present invention proposes integrated nano energy getter and preparation method in a kind of self energizing wireless sensing node, belongs to
In the technical field of microelectromechanical systems (MEMS).
Background technology
With the fast development of technology of Internet of things, it will there are more and more electronic equipments to be connected in network and carry out data
It exchanges, including all kinds of wireless sensor nodes, they can be used for environment and building detection, animal tracking and control, process
Detection, national security and health application etc..By optimizing circuit structure and adjusting the working method of transmitting-receiving subassembly, transmitting-receiving subassembly
Power consumption can control in microwatt magnitude, the wireless network node of this low-power consumption can carry out directly by way of energy harvesting
The drawbacks of powering, avoiding periodic replacement battery.In numerous energy harvesting modes, luminous energy is obtained can be used with thermal energy acquisition
Solid-state converter part, without movable member, reliability is high, and service life is long, Maintenance free, and when work not will produce noise.With
The development of material science, the appearance of nano material opens the new direction of thermoelectricity and photoelectricity research, sufficient in heat source or illumination
Occasion, thermoelectric (al) type energy harvesting device and photo-electric energy harvesting device based on nano material and technique be wireless network sensing
The ideal power source of node.
Invention content
Technical problem:The object of the present invention is to provide integrated nano energies in a kind of self energizing wireless sensing node to obtain
Device and preparation method, superlattices and polysilicon nanometer cable architecture are respectively adopted with thermoelectric generator in photocell, defeated to improve
Go out power, and be integrated in on a piece of substrate, can simultaneously in environment thermal energy and luminous energy obtain, in complicated ambient enviroment
Under, two kinds of acquisition modes can be complementary to one another, collaboration power supply.
Technical solution：It is integrated in order to solve the above technical problems, the present invention proposes in a kind of self energizing wireless sensing node
Change nano energy getter and preparation method.Its structure includes mainly photocell and thermoelectric generator, and two parts are made in
With on a piece of silicon substrate, realizing the single-chip integration of thermoelectricity and photoelectricity, and photocell and thermoelectric generator electrode are located at silicon chip
The same side, convenient for the encapsulation in practical application, the insulation system using silicon nitride film as two parts avoids electricity short
Road.
Photronic substrate selects the N-type silicon chip of long carrier lifetime, light-receiving surface to use textured inverted pyramid matte
Structure, effect are to reduce the reflection of incident light；The antireflection silicon nitride film of a layer specific thickness is coated on suede structure,
Reduce bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；It is made using ion injection method
One N-N+ height is tied, and be otherwise known as back of the body electric field structure, for reducing surface recombination；Non-crystalline silicon and nanometer silicon carbide film alternating
It is arranged to make up superlattice structure, the monocrystalline silicon thin film of one layer of extension is covered above superlattice structure, is partly adulterated for p-type
Region is partly n-type doping region as photronic emitter region, for forming Ohmic contact with base electrode；Monocrystalline silicon is thin
Layer of silicon dioxide layer passivation layer is covered on film, and has opened electrode contact hole, the surface recombination for reducing upper surface, interdigitated
Photocell electrode includes base electrode and transmitting region electrode, compares traditional photocell structure, and the electrode width of upper surface is very big,
On the one hand the backside reflection for reducing battery, on the other hand reduces the dead resistance of battery, is conducive to improve output performance.
Thermoelectric generator is mainly made of horizontal positioned thermoelectric pile and heat-dissipating metal sheet；Wherein thermoelectric pile is by many
Thermocouple is connected in series, and each thermocouple is by N-type polycrystalline silicon nano wire thermocouple arm and p-type polysilicon nano wire thermocouple
Arm is constituted, and is included multiple row polysilicon nanowire on thermocouple arm, is used as and is connected using nanometer wire-braced structures between different lines, carried
The Stability and dependability of high structure；Metal is interconnected as thermoelectric pile using golden (Au) between two semiconductor arms, because of heat
Cold end is all transmitted to by the hot junction of thermoelectric pile, so thermocouple is in parallel on thermal conduction study, it is electrically in series；In order to facilitate test and
Avoid partial deviations that the failure of entire device, thermoelectric generator is caused to make multiple output electrodes；In the top of thermoelectric pile,
The cavity structure produced is discharged by sacrificial layer, further enhances being thermally isolated between cold and hot both ends；Thermoelectric generator
Cold end heat dissipation is had effectively achieved by one piece of metallic plate, increase the thermal coupling of thermoelectric pile and ambient enviroment, sheet metal
Material is aluminium (Al), and silicon nitride film is separated between thermoelectric pile to realize insulation；Since heat flow path is perpendicular to chip surface, just
In the encapsulation of device in the application.
Photronic operation principle is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics expands to N-type semiconductor
It dissipates, hole is spread to P-type semiconductor, is gathered in two electrode sections respectively, generates certain potential difference output power simultaneously；Electricity
When the output power of pole, other than photogenerated current, due to output voltage, there is also a knot " dark electricity opposite with photogenerated current
Stream " is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric generator is as follows：When applying certain temperature difference in generator hot and cold side, heat can be from warm
End face is injected, and after thermoelectric pile, is finally discharged from cold end face, and certain Temperature Distribution is formed on thermoelectric generator；
Since there are certain thermal resistances for thermoelectric pile, the corresponding temperature difference is will produce between the cold and hot node of thermoelectric pile, is imitated based on Seebeck
It answers, the both ends of thermoelectric pile can export the potential directly proportional to the temperature difference, and power output can be achieved after connection load.
In practical applications, photronic light is face-up, for the light in environment of accepting, covered metal plate it is another
Surface is affixed on radiator；After the energy that photocell and thermoelectric generator obtain is by DC-DC conversion modules, it is stored in electricity
Chi Zhong, to be arranged in the various wireless sensing nodes power supply on power amplifier periphery.
Advantageous effect：The present invention has the advantage that relative to existing energy harvesting utensil：
1. the present invention is using ripe CMOS technology and MEMS technology, advantage have it is small, at low cost, can batch micro operations,
And it can realize single-chip integration with microelectronic circuit；
2. the single-chip integration of two kinds of energy harvesting modes of thermoelectricity-photoelectricity is realized, under complicated ambient enviroment, two kinds of acquisitions
Mode can be complementary to one another, collaboration power supply；
3. photocell uses all back-contact electrodes structure, opposite Traditional photovoltaic pool structure to be hindered with no shading loss, low electrode string
With the advantage interconnected convenient for device；
4. the nanometer size effect of superlattices makes photocell possess excellent light sensitivity, photoelectric characteristic, high conductivity, bloom
Absorption coefficient and high optical band gap, and photoconduction decay under illumination condition it is smaller, to improve photronic efficiency；
5. thermoelectric generator uses hybrid architecture, i.e., heat flow path is perpendicular to chip surface, and current path is parallel
In chip surface, the encapsulation of device is simplified perpendicular to the heat flow path of chip surface, and the thermoelectric pile in chip plane,
The making of IC compatible technologies can be used, there is higher integration density and larger output voltage density；
6. the thermocouple of thermoelectric generator uses polysilicon nanowire, because of quantum confinement and phonon scattering effect, polycrystalline
The thermal conductivity of silicon nanowires is far below conventional bulk, improves the conversion efficiency of thermoelectric of thermoelectric generator；
7. photocell and thermoelectric generator are solid state energy converter, without movable member, reliability is high, uses the longevity
Life length, Maintenance free, when work, not will produce noise；
8. all electrodes of integrated nano energy getter in same plane, avoid the complicated electricity of similar via
Connection.
Description of the drawings
Fig. 1 is the application schematic diagram of integrated nano energy getter in self energizing wireless sensing node of the present invention；
Fig. 2 is the polysilicon nanowire thermoelectricity of integrated nano energy getter in self energizing wireless sensing node of the present invention
Even arm configuration schematic diagram；
Fig. 3 is the overlooking structure diagram of integrated nano energy getter in self energizing wireless sensing node of the present invention；
Fig. 4 is the overlooking structure diagram after the completion of prepared by thermoelectric generator electrode of the present invention；
Fig. 5 is the overlooking structure diagram after the completion of prepared by photocell electrode of the present invention；
Fig. 6 is the device A-A ' of integrated nano energy getter in self energizing wireless sensing node of the present invention to section view
Figure.
Figure includes：Photocell 1, thermoelectric generator 2, substrate 3, suede structure 4 carry on the back electric field structure 5, the first silicon nitride
Film 6, superlattice structure 7, monocrystalline silicon thin film 8, n-type doping region 9, base electrode 10 emit region electrode 11, the second silicon nitride
Film 12, N-type polycrystalline silicon nano wire thermocouple arm 13, p-type polysilicon nano wire thermocouple arm 14, thermoelectric pile interconnect metal 15,
Third silicon nitride film 16, metallic plate 17, silicon dioxide layer passivation layer 18, thermoelectric generator output electrode 19, polysilicon is received
Rice noodles 20, nanometer wire-braced structures 21, light-receiving surface 22, radiator 23, DC-DC conversion modules 24, battery 25, wireless sensing node
26。
Specific implementation mode
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1-6, the present invention propose in a kind of self energizing wireless sensing node integrated nano energy getter and
Preparation method.Structure includes mainly photocell 1 and thermoelectric generator 2, and two parts are made in on a piece of silicon substrate 3, real
The single-chip integration of thermoelectricity and photoelectricity is showed, and photocell 1 and 2 electrode of thermoelectric generator are located at the same side of silicon chip, convenient for real
Encapsulation in the application of border, the insulation system using the second silicon nitride film 12 as two parts avoid electrical short.
Photronic substrate 3 selects the N-type silicon chip of long carrier lifetime, light-receiving surface 22 to use textured inverted pyramid suede
Face structure 4, effect are to reduce the reflection of incident light；The first nitrogen of antireflection of a layer specific thickness is coated on suede structure 4
SiClx film 6 reduces bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；Lower surface use from
Sub- method for implanting has made a N-N+ height and has tied, and be otherwise known as back of the body electric field structure 5, for reducing surface recombination；In battery
Upper surface, non-crystalline silicon and nanometer silicon carbide film, which are alternately arranged, constitutes superlattice structure 7, per layer thickness in 2-10nm, superlattices
Nanometer size effect so that photocell 1 is possessed excellent light sensitivity, photoelectric characteristic, high conductivity, the high absorption coefficient of light and bloom
Learn band gap, and photoconduction decay under illumination condition it is smaller, to improve the transfer efficiency of photocell 1；In superlattice structure 7
Top cover the monocrystalline silicon thin film 8 of one layer of extension, be partly as photronic emitter region for P-doped zone domain partly
N-type doping region 9, for forming Ohmic contact with base electrode 10, covering layer of silicon dioxide layer is passivated on monocrystalline silicon thin film 8
Layer 18, and a series of electrode contact hole has been opened, the surface recombination for reducing upper surface, interdigitated photocell electrode includes base
Region electrode 10 and transmitting region electrode 11, compare traditional photocell structure, the electrode width of upper surface is very big, on the one hand reduces
On the other hand the backside reflection of battery reduces the dead resistance of battery, be conducive to improve output performance.
Thermoelectric generator 2 is mainly made of horizontal positioned thermoelectric pile and heat-dissipating metal sheet 17；Thermoelectric pile is by many
Thermocouple is connected in series, and each thermocouple is by N-type polycrystalline silicon nano wire thermocouple arm 13 and p-type polysilicon nano wire thermoelectricity
Even arm 14 is constituted, and includes multiple row polysilicon nanowire 20 on thermocouple arm, the width of nano wire is 1-100nm, and length is 1-10 μ
M, the spacing between same row polysilicon nanowire 20 are 1-100nm, and 21 conduct of nanometer wire-braced structures is used between different lines
Connection, improves the Stability and dependability of structure；Because of quantum confinement and phonon scattering effect, the thermal conductivity of polysilicon nanowire 20
Far below conventional bulk, the conversion efficiency of thermoelectric of thermoelectric generator 2 is improved；Au conducts are used between two semiconductor arms
Thermoelectric pile interconnects metal 15, because heat is all transmitted to cold end by the hot junction of thermoelectric pile, thermocouple is in parallel on thermal conduction study,
It is electrically in series；In order to facilitate the failure for testing and avoiding partial deviations to lead to entire device, thermoelectric generator has made more
A thermoelectric pile output electrode 19；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, is further enhanced
Being thermally isolated between cold and hot both ends；The cold end of thermoelectric generator has effectively achieved heat dissipation by one piece of metallic plate 17, increases
The thermal coupling of thermoelectric pile and ambient enviroment, 17 material of metallic plate are separated with third silicon nitride film 16 between Al, with thermoelectric pile
To realize insulation；Since heat flow path is perpendicular to chip surface, it is convenient for the encapsulation of device in the application.
The operation principle of photocell 1 is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics expands to N-type semiconductor
It dissipates, hole is spread to P-type semiconductor, is gathered in two electrode sections respectively, generates certain potential difference output power simultaneously.Electricity
When the output power of pole, other than photogenerated current, due to output voltage, there is also a knot " dark electricity opposite with photogenerated current
Stream " is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric generator 2 is as follows：When applying certain temperature difference in generator hot and cold side, heat can be from warm
End face is injected, and after thermoelectric pile, is finally discharged from cold end face, and certain Temperature Distribution is formed on thermoelectric generator.
Since there are certain thermal resistances for thermoelectric pile, the corresponding temperature difference is will produce between the cold and hot node of thermoelectric pile, is imitated based on Seebeck
It answers the both ends of thermoelectric pile that can export the potential directly proportional to the temperature difference, power output can be achieved after connection load.
In practical applications, as shown in Fig. 1, the light-receiving surface 22 of photocell 1 upward, for the light in environment of accepting,
Due to illumination heat, while as the hot junction face of device, another surface of covered metal plate 17 is affixed on radiator 23, as device
The cold end of part；After the energy that photocell 1 and thermoelectric generator 2 obtain is by DC-DC conversion modules 24, it is stored in battery 25
In, can be to power in the various wireless sensing nodes 26 for be arranged in power amplifier periphery.
The preparation method of integrated nano energy getter is as follows in the self energizing wireless sensing node of the present invention：
1) select N-type silicon chip as substrate 3, the doping concentration of phosphorus is 1 × 1015cm-3, resistivity is about 5 Ω cm, is made
Preceding carry out twin polishing, and impregnate in a solution of hydrofluoric acid, remove the impurity such as metallic particles；
2) using plasma enhancing chemical vapor deposition (PECDV) technique makes non-crystalline silicon nanometer silicon carbide on substrate
Superlattice structure 7, non-crystalline silicon and carborundum films are alternately arranged, and thickness is respectively 2nm and 4nm；
3) in one layer of monocrystalline silicon thin film 8 of the upper surface extension of silicon chip, boron ion diffusing, doping is carried out, doping concentration is 1 ×
1020cm-3, the areas P+ are formed, as photoelectric PN junction emitter；
4) it uses pecvd process to deposit one layer of silicon nitride, thickness about 200nm, and photoetching to be molded, here using the hydrogen of buffering
Fluoric acid removes the silicon nitride of specific region, the window as the injection of phosphonium ion below；
5) phosphonium ion is injected and is annealed, and the silicon nitride of remaining area is removed with hydrofluoric acid；
6) pecvd process is used to deposit silica and the photoetching molding of one layer of 100nm, as silicon dioxide layer passivation layer
18, and expose electrode contact region；
7) suede structure 4 is made at the N-type silicon chip back side, then carries out P ion injection, formed back of the body electric field structure 5, then use
Pecvd process deposits the first silicon nitride film 6 and is used as optic anti-reflective layer；
8) aluminium layer and the photoetching for evaporating one layer of 2 μ m-thick form photronic interdigital electrode, including base electrode 10 and transmitting
Region electrode 11；
9) pecvd process is used to deposit the second silicon nitride film 12, as electrical insulator layer；
10) low-pressure chemical vapor phase deposition (LPCDV) technique is used to grow a layer thickness for 1 μm of polysilicon membrane；
11) electron beam lithography or extreme ultraviolet lithography is used to form polysilicon nanowire 20；
12) doping of N-type phosphonium ion is carried out to 20 corresponding region of polysilicon nanowire and p-type boron ion is adulterated, be respectively formed N
Type polysilicon nanowire thermocouple arm 13 and p-type polysilicon nano wire thermocouple arm 14；
13) layer gold that evaporation a layer thickness is 0.2 μm, stripping method molding form thermoelectric pile interconnection metal 15 and thermoelectric pile
Output electrode 19；
14) pecvd process is used to grow one layer of silicon nitride film, thickness is 0.1 μm, as dielectric insulation layer and protection
Layer；
15) polyimides that spin coating a layer thickness is 3 μm, and photoetching is molded, as sacrificial layer；
16) metallic aluminium that plating a layer thickness is 1 μm, photoetching are molded the heat-dissipating metal sheet 17 as device；
17) after being cleaned by ultrasonic, silicon chip is put into acetone 10 minutes, then is immediately placed in ethyl alcohol 10 minutes, and release polyimides is sacrificial
Domestic animal layer, finally washes by water and dries.
Distinguish whether be the structure standard it is as follows：
Integrated nano energy getter substrate 3 is N-type silicon chip, photocell in the self energizing wireless sensing node of the present invention
Light-receiving surface 22 on make and have suede structure 4, the first silicon nitride film 6 and back of the body electric field structure 5, cover on superlattice structure 7
The monocrystalline silicon thin film 8 of one layer of extension is partly P-doped zone domain, is partly n-type doping region 9, the nano-scale effect of superlattices
Photocell should be made to possess excellent light sensitivity, photoelectric characteristic, high conductivity, the high absorption coefficient of light and high optical band gap, and photoelectricity
Lead decay under illumination condition it is smaller, to improve photronic efficiency；Layer of silicon dioxide is deposited on monocrystalline silicon thin film 8
Layer passivation layer 18, and a series of electrode contact hole has been opened, it is connected with photronic base electrode 10 and transmitting region electrode 11；Heat
The second silicon nitride film 12 is separated between electric-type generator 2 and photocell 1, the critical piece thermoelectric pile of thermoelectric generator 2 is
It is connected in series by many thermocouples, and each thermocouple is by N-type polycrystalline silicon nano wire thermocouple arm 13 and p-type polysilicon nanometer
Line thermocouple arm 14 is constituted, and is included multiple row polysilicon nanowire 20 on thermocouple arm, is tied using nano wire support between different lines
Structure 21 improves the Stability and dependability of structure as connection, and the thermocouple of thermoelectric generator uses polysilicon nanowire, because
The thermal conductivity of quantum confinement and phonon scattering effect, polysilicon nanowire is far below conventional bulk, improves thermoelectric (al) type power generation
The conversion efficiency of thermoelectric of machine；Metal 15 is interconnected as thermoelectric pile using Au between two semiconductor arms, while having made multiple heat
Pile output electrode 19；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, the top of cavity is metal
Plate 17 is separated with third silicon nitride film 16 between thermoelectric pile；In technique, device is using ripe CMOS and MEMS compatible technologies
Prepare, it is small, at low cost, can batch micro operations, and can with microelectronic circuit realize single-chip integration.
Meet conditions above structure be considered as the present invention self energizing wireless sensing node in integrated nano energy obtain
Take device and preparation method.
Claims (3)
1. integrated nano energy getter and preparation method in a kind of self energizing wireless sensing node, it is characterized in that：Device by
(2) two parts of photocell (1) and thermoelectric generator being made on same substrate (3) are constituted, and centre is separated with the second nitridation
Silicon thin film (12), making on the light-receiving surface (22) of substrate (3) has suede structure (4), the first silicon nitride film (6) and carries on the back electric field knot
Structure (5)；The monocrystalline silicon thin film (8) of one layer of extension is covered above superlattice structure (7), is partly P-doped zone domain, portion
It is divided into n-type doping region (9), layer of silicon dioxide layer passivation layer (18) is deposited on monocrystalline silicon thin film (8), silicon dioxide layer is blunt
The electrode contact hole changed on layer (18) is connected with photronic base electrode (10) and transmitting region electrode (11)；Thermoelectric generator
(2) critical piece is thermoelectric pile, and thermoelectric pile one end is located above base electrode (10) and transmitting region electrode (11), other end position
In the gap location of base electrode (10) and transmitting region electrode (11), it is connected in series by many thermocouples, thermoelectric pile surrounding makes
Multiple thermoelectric pile output electrodes (19)；In the top of thermoelectric pile, the cavity structure produced is discharged by sacrificial layer, cavity it is upper
Side is metallic plate (17), and third silicon nitride film (16) is separated between thermoelectric pile；Nano super-lattice structured (7) by non-crystalline silicon and
Carborundum films are alternately arranged, and per layer thickness in 1-10nm, the nanometer size effect of nano super-lattice structured (7) makes photoelectricity
Pond possesses excellent light sensitivity, photoelectric characteristic, high conductivity, the high absorption coefficient of light and high optical band gap, and photoconduction is in illumination
Under the conditions of decay it is smaller, to improve the efficiency of photocell (1)；The thermoelectric pile of thermoelectric generator (2) is by N-type polycrystalline silicon
Nano wire thermocouple arm (13) and p-type polysilicon nano wire thermocouple arm (14) are constituted, and include multiple row polysilicon on thermocouple arm
Nano wire (20), the width of nano wire are 1-100nm, and length is 1-10 μm, between same row polysilicon nanowire (20) between
Away from for 1-100nm, using nanometer wire-braced structures (21) as connection between different lines；Because quantum confinement and phon scattering are imitated
It answers, the thermal conductivity of polysilicon nanowire (20) is far below conventional bulk, improves the conversion efficiency of thermoelectric of thermoelectric generator.
2. integrated nano energy getter and preparation side in a kind of self energizing wireless sensing node according to claim 1
Method, it is characterized in that：Base electrode (10) and transmitting region electrode (11) are interlaced, and interdigitated arrangement is presented.
3. integrated nano energy getter and preparation side in a kind of self energizing wireless sensing node according to claim 1
Method, it is characterized in that：The light-receiving surface (22) of photocell (1) is for the light in environment of accepting, metallic plate (17) in practical applications
It is affixed on radiator (23)；After the energy that photocell (1) and thermoelectric generator (2) obtain is by DC-DC conversion modules (24),
It is stored in battery (25), can be various wireless sensing nodes (26) power supply for being arranged in power amplifier periphery.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110282597A (en) * | 2019-06-19 | 2019-09-27 | 南京邮电大学 | A kind of stack thermoelectric pile of hybrid connected structure |
| CN111146326A (en) * | 2019-12-03 | 2020-05-12 | 中国科学院微电子研究所 | Thermoelectric device and preparation method thereof |
| CN112885949A (en) * | 2021-01-19 | 2021-06-01 | 电子科技大学 | Easily-integrated micro atomic layer thermopile heat flow sensor and preparation method thereof |
| WO2021170112A1 (en) * | 2020-02-28 | 2021-09-02 | 山东芯源光电科技有限公司 | Black silicon carbide ceramic based thermoelectric photodetector, optical power meter and optical energy meter |
-
2018
- 2018-03-14 CN CN201810208124.7A patent/CN108540046A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110282597A (en) * | 2019-06-19 | 2019-09-27 | 南京邮电大学 | A kind of stack thermoelectric pile of hybrid connected structure |
| CN110282597B (en) * | 2019-06-19 | 2022-05-24 | 南京邮电大学 | Stack type thermopile with series-parallel structure |
| CN111146326A (en) * | 2019-12-03 | 2020-05-12 | 中国科学院微电子研究所 | Thermoelectric device and preparation method thereof |
| CN111146326B (en) * | 2019-12-03 | 2024-04-05 | 中国科学院微电子研究所 | Thermoelectric device and preparation method thereof |
| WO2021170112A1 (en) * | 2020-02-28 | 2021-09-02 | 山东芯源光电科技有限公司 | Black silicon carbide ceramic based thermoelectric photodetector, optical power meter and optical energy meter |
| CN112885949A (en) * | 2021-01-19 | 2021-06-01 | 电子科技大学 | Easily-integrated micro atomic layer thermopile heat flow sensor and preparation method thereof |
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