CN108470820A - It connects four mode nanometer thermoelectric photovoltaic energy collection devices - Google Patents
It connects four mode nanometer thermoelectric photovoltaic energy collection devices Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
- H02S10/30—Thermophotovoltaic systems
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The four mode nanometer thermoelectric photovoltaic energy collection device of series connection of the present invention, the luminous energy being mainly used in the thermal energy and environment for collecting radio-frequency receiving-transmitting component amplifiers are powered to wireless sensing node.Four mode nanometer thermoelectric photovoltaic energy collection devices of connecting are even as thermoelectric generation elements using nanometer thermoelectric, have the characteristics that small, simultaneously compared with traditional thermoelectric energy collector, the thermal conductivity of nanometer thermoelectric idol is lower, therefore there is higher thermoelectric conversion efficiency, then the energy being collected into is converted into DC signal by DC DC conversion modules, be ultimately stored in rechargeable battery, the electric energy in rechargeable battery may be implemented to the power supply of wireless sensing node.The four mode nanometer thermoelectric photovoltaic energy collection device of series connection is produced on N-type silicon chip substrate, including photocell and thermoelectric energy collector, and the two carries out electric isolation by layer of silicon dioxide layer.
Description
Technical field
The present invention proposes a kind of four mode nanometer thermoelectric photovoltaic energy collection devices of series connection, belongs to microelectromechanical systems
(MEMS) technical field.
Background technology
The wireless system of industrial application mostly uses greatly radio frequency similar with cellular mobile telephone and connect, and use is point-to-point or point
Data transmission is carried out to multiple spot.An important component of the radio-frequency receiving-transmitting component as wireless system, is widely used in communicating
And radar system.Radio-frequency receiving-transmitting component makees power amplifier especially therein, and efficiency is very low at work, there is suitable one
Divide energy to dissipate in the form of thermal energy, not only causes the heating of transmitting-receiving subassembly, affect module and normally work, also create energy
The waste of amount.
Using the even thermoelectric energy collector as generating element of nanometer thermoelectric, have the characteristics that it is small, while with tradition
Thermoelectric energy collector compare, there is higher thermoelectric conversion efficiency, the heat that dissipates in can working radio-frequency power amplifier
It can be collected, in addition, photocell and thermoelectric energy collector are carried out single-chip integration, can be collected under illumination condition again
Luminous energy can be used as the strong supplement of thermal energy collecting.It collects the electric energy generated to be stored in battery by DC-DC conversions, not only
The service efficiency that energy can be improved reduces the waste of the energy, while being alternatively the various nothings for being arranged in power amplifier periphery
Line sensing node is powered, the final purpose for realizing green communications.
Invention content
Technical problem:The object of the present invention is to provide a kind of four mode nanometer thermoelectric photovoltaic energy collection devices of series connection, photoelectricity
Superlattices and four mode nanometer thermoelectric idol structure of level are respectively adopted with thermoelectric energy collector in pond, to improve output power,
And be integrated in on a piece of substrate, can simultaneously in environment thermal energy and luminous energy be collected, under complicated ambient enviroment, two kinds
Collection mode can be complementary to one another, and collected energy will convert into power storage and get up for powering to wireless sensing node, most
Green communications are realized eventually.
Technical solution：In order to solve the above technical problems, the present invention proposes a kind of four mode nanometer thermoelectric photoelectricity energy of series connection
Measure collector.Its structure includes mainly silicon substrate, matte, plating aluminium oxide film layer, substrate N-shaped doped region, the doping of substrate p-type, nitrogen
SiClx layer, photocell electrode, photocell output pad, silica separation layer, nanometer thermoelectric heap, silicon dioxide layer of protection, polyamides
Imine layer and metallic heat radiating plate.
Four mode nanometer thermoelectric photovoltaic energy collection devices of connecting are produced on the N-type silicon chip substrate of long carrier lifetime, main
It to be formed by photocell and thermoelectric energy collector are integrated.Photocell is by N-type silicon chip substrate, matte, plating aluminium oxide film layer, substrate
N-shaped doped region, the doping of substrate p-type, silicon nitride layer, photocell optoelectronic pole and photocell output pad are constituted.Thermoelectric energy collector
It is made of nanometer thermoelectric heap, silicon dioxide layer of protection, polyimide layer and metallic heat radiating plate.Wherein nanometer thermoelectric heap includes N-type
Polysilicon nanowire cluster, p-type polysilicon nano line cluster, metal connecting line, polymethyl methacrylate and thermoelectricity export pad.Photoelectricity
Pond and thermoelectric energy collector are isolated by silicon dioxide layer of protection.
Photronic substrate selects the N-type silicon chip of long carrier lifetime, and the lower surface of substrate is as light-receiving surface, using texture
The inverted pyramid suede structure of change, effect are to reduce the reflection of incident light；A layer specific thickness is coated on suede structure
Plating aluminium oxide film layer reduces bluk recombination and the surface recombination of battery using hydrogen passivation and fixed charge effect；It is adopted in lower surface
A N-N+ height is made with ion injection method to tie, be otherwise known as back of the body electric field structure, for reducing surface recombination；In battery
Upper surface, non-crystalline silicon and nanometer silicon carbide film be alternately arranged composition superlattice structure, is covered in the top of superlattice structure
The monocrystalline silicon thin film of one layer of extension, is partly P type doped regions, is partly N-doped zone as photronic emitter region, is used
In forming Ohmic contact with base electrode, layer of silicon dioxide layer passivation layer is covered on monocrystalline silicon thin film, and in specific region
A series of electrode contact hole is opened, the surface recombination for reducing upper surface, interdigitated photocell electrode includes base electrode
It with transmitting region electrode, being made of metal interconnection layer, compares traditional photocell structure, the electrode width of upper surface is very big, and one
Aspect reduces the backside reflection of battery, on the other hand reduces the dead resistance of battery, is conducive to improve output performance.
The horizontal nano thermoelectric pile of thermoelectric energy collector is connected in series by multipair horizontal nano thermocouple, horizontal nano
Thermocouple is made of horizontal positioned N-type polycrystalline silicon nano line cluster and p-type polysilicon nano line cluster, and polysilicon nanowire cluster is direct
Electric appliance interconnection is carried out using metal contact wires, both ends export pad voltage outputs by thermoelectricity, exist in four mode structural arrangement of level
On silicon substrate, metallic heat radiating plate is covered on the nanometer thermoelectric heap of center on substrate, heat dissipation is had effectively achieved, provides simultaneously
Nanometer thermoelectric heap hot junction thermal field, increases the thermal coupling of nanometer thermoelectric heap and ambient enviroment；The surrounding of nanometer thermoelectric idol covers
One strata imide layer is isolated as thermal insulation layer, realization with the calorifics in nanometer thermoelectric heap hot junction；Also there is one layer on nanometer thermoelectric heap
Silicon dioxide layer is as electrical apparatus insulation layer；In order to increase the stability of thermoelectric energy collector structure, filled out between nanometer thermoelectric idol
Filled with polymethyl methacrylate.There is layer of silicon dioxide layer between thermoelectric energy collector and photocell, as electrical apparatus insulation
Layer.
Photronic operation principle is as follows：When the photon with appropriate energy is incident in photronic PN junction, photon with
It constitutes semi-conducting material interaction and generates electrons and holes, under the electric field action in PN junction region, electronics expands to N-type semiconductor
It dissipates, hole is spread to P-type semiconductor, is gathered in two electrode sections respectively, generates certain potential difference simultaneously in photoelectric yield
Pad output powers.It is opposite with photogenerated current there is also one due to output voltage other than photogenerated current when output power
It ties " dark current ", is output to the difference of the electric current of load actually photogenerated current and dark current.
The operation principle of thermoelectric energy collector is as follows：When dissipating in four mode nanometer thermoelectric photovoltaic energy collection devices of connecting
Applying certain temperature difference on hot plate, heat can be injected from hot junction face, after nanometer thermoelectric heap, be finally discharged from cold end face, and
Certain Temperature Distribution is formed in thermoelectric energy collector.Since there are certain thermal resistances for nanometer thermoelectric heap, in nanometer thermoelectric
The corresponding temperature difference is will produce between the cold and hot node of heap, the thermoelectricity based on Seebeck effect nanometer thermoelectric heap both ends exports pad meetings
Power output can be achieved after connection load in the output potential directly proportional to the temperature difference.
The four mode nanometer thermoelectric photovoltaic energy collection device of series connection is used in radio-frequency receiving-transmitting component, by four mode nanometers of connecting
The heat sink of thermoelectricity photovoltaic energy collection device is attached to above the power amplifier of radio-frequency receiving-transmitting component, in working power amplifier
The thermal energy of dissipation is collected, and can reduce the waste of the energy, improves efficiency of energy utilization；Photronic light is face-up, uses
Light in environment of accepting, captures luminous energy, after the energy of collection is by DC-DC conversion modules, is stored in battery
In, it can be the various wireless sensing nodes power supply for being arranged in power amplifier periphery, finally realize green communications.
Advantageous effect：The present invention has the following advantages relative to existing generator：
1. the four mode nanometer thermoelectric photovoltaic energy collection device of series connection of the present invention is even as generating element, tool using nanometer thermoelectric
Have the characteristics that small, while compared with traditional thermoelectric energy collector, there is higher thermoelectric conversion efficiency
2. using ripe CMOS technology and MEMS technology manufacture in technique, advantage have it is small, at low cost, can make in batches
It makes, and can realize single-chip integration with microelectronic circuit；
3. the single-chip integration of two kinds of collection of energy modes of thermoelectricity-photoelectricity is realized, under complicated ambient enviroment, two kinds of collections
Mode can be complementary to one another, collaboration power supply；
4. photocell uses all back-contact electrodes structure, opposite Traditional photovoltaic pool structure to be hindered with no shading loss, low electrode string
With the advantage interconnected convenient for device；
5. the thermoelectric energy collector for four mode nanometer thermoelectric photovoltaic energy collection devices of connecting uses horizontal type structure, i.e., hot
Flow path is parallel to chip surface, and current path is parallel to chip surface so that the both ends of nanometer thermoelectric heap have quite larger
Temperature difference, while the nanometer thermoelectric heap in the chip plane can be used the making of IC compatible technologies, has higher integrated close
Degree and larger output voltage density；
6. photocell is solid state energy converter with thermoelectricity photovoltaic energy collection device, without movable member, reliability is high, makes
With long lifespan, Maintenance free, when work, not will produce noise；
7. all electrodes for four mode nanometer thermoelectric photovoltaic energy collection devices of connecting in same plane, avoid similar mistake
The complexity in hole is electrically connected.
Description of the drawings
Fig. 1 is application signal of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection in radio-frequency receiving-transmitting component
Figure；
Fig. 2 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection is making matte, plated film, light
Overlooking structure diagram after electrically doped；
Fig. 3 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection is making matte, plated film, light
The A-A ' in Fig. 2 after electrically doped is to sectional view；
Fig. 4 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection makes on the basis of Fig. 2
Vertical view after silicon nitride layer；
Fig. 5 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection makes on the basis of Fig. 3
The B-B ' in Fig. 4 after silicon nitride layer is to sectional view；
Fig. 6 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection makes on the basis of Fig. 3
The C-C ' in Fig. 4 after silicon nitride layer is to sectional view；
Fig. 7 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection makes on the basis of Fig. 4
Vertical view after photocell electrode and photoelectric yield pad；
Fig. 8 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection makes on the basis of Fig. 4
The D-D ' in Fig. 7 after photocell electrode and photoelectric yield pad is to sectional view；
Fig. 9 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection deposits on the basis of Fig. 8
Silicon dioxide layer makes the vertical view after nanometer thermoelectric heap；
Figure 10 is that the photocell of the present invention four mode nanometer thermoelectric photovoltaic energy collection devices of series connection deposits on the basis of Fig. 8
Silicon dioxide layer makes E-E ' after nanometer thermoelectric heap in Fig. 9 to sectional view；
Figure 11 be the present invention series connection four mode nanometer thermoelectric photovoltaic energy collection devices final vertical view (polyimide layer and
10%) transparency of metallic heat radiating plate is set as；
Figure 12 is F-F ' in four mode nanometer thermoelectric photovoltaic energy collection device Figure 11 of present invention series connection to sectional view；
Figure includes：Radio-frequency receiving-transmitting component amplifiers 1, follow-up signal processing module 2, four mode nanometer thermoelectric energy of connecting
Collect 3, DC-DC conversion modules 4, wireless sensing node 5, rechargeable battery 6, four mode nanometer thermoelectric photovoltaic energy collection devices of connecting
3 include photocell and thermoelectric energy collector, and photocell includes N-type silicon chip substrate 7, matte 8, plating aluminium oxide film layer 9, substrate n
Type doped region 1, substrate p-type doping 11, silicon nitride layer 12, photocell electrode 13, photoelectric yield pad 14, thermoelectric energy collector
Including nanometer thermoelectric heap, the second silicon dioxide layer 15, polyimide layer 16, metallic heat radiating plate 17, nanometer thermoelectric heap includes N types
Polysilicon nanowire cluster 18, p-type polysilicon nano line cluster 19, metal connecting line 20, polymethyl methacrylate 21 and thermoelectricity output
Pad 22, photocell and thermoelectric energy collector carry out electric isolation by the first silicon dioxide layer of protection 23.
Specific implementation mode
The following further describes the specific embodiments of the present invention with reference to the drawings.
Referring to Fig. 1, the present invention proposes a kind of four mode nanometer thermoelectric photovoltaic energy collection devices of series connection, and major function is
The luminous energy collected in the thermal energy and environment of radio-frequency receiving-transmitting component amplifiers 1 is powered to wireless sensing node 5.Four modes of series connection are received
The metallic heat radiating plate 12 of rice thermoelectricity photovoltaic energy collection device 3 is attached to the surface of radio-frequency receiving-transmitting component amplifiers 1, radio-frequency receiving-transmitting component
The output termination follow-up signal processing module 2 of amplifier 1, four mode nanometer thermoelectric photovoltaic energy collection devices 3 of series connection penetrate collection
The thermal energy of frequency transmitting-receiving subassembly amplifier 1 is converted into electric energy by Seebeck effect, and the luminous energy being collected simultaneously in environment is converted into electricity
Can, the electric energy of collection is then converted by DC signal by DC-DC conversion modules 4, is ultimately stored in rechargeable battery 6.
Electricity in rechargeable battery 6 may be implemented to the power supply of wireless sensing node 5.
Referring to Fig. 2, photronic composition is as follows.First matte 8, plating aluminium oxide film are made in the one side of N-type silicon chip substrate 7
Layer 9, substrate N-shaped doped region 10, the doping 11, A-A ' of substrate p-type are as shown in Figure 3 to sectional view.Then in N-type silicon chip substrate 7
Upper one layer of silicon nitride layer 12 of deposit is used as isolated protective layer, in order to extract photronic electrode, the lining on silicon nitride layer 8
Bottom N-shaped doped region 10, substrate p-type adulterate 11 punching two ends, as shown in figure 4, its B-B ' is to sectional view as shown in figure 5, C-C '
It is as shown in Figure 6 to sectional view.Then one layer of photocell electrode 13 and photoelectric yield pad 14 are deposited on silicon nitride layer 8, such as Fig. 7
Shown, D-D ' is as shown in Figure 8 to sectional view.
Referring to Fig. 9, on the basis of Fig. 8, one layer of first silicon dioxide layer 23 is deposited as isolation, and trepanning goes out photocell
Photoelectric yield pad 14.Thermoelectric energy collector is made in the first silicon dioxide layer 23.First in the first silicon dioxide layer
Nanometer thermoelectric heap is made on 23, nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster 18, p-type polysilicon nano line cluster 19, gold
Belong to line 20, polymethyl methacrylate 21 and thermoelectricity and exports pad 22.Its E-E ' is as shown in Figure 10 to sectional view.Then it is receiving
One layer of second silicon dioxide layer 15 is deposited on rice thermoelectric pile, nanometer thermoelectric heap is protected, is covered among nanometer thermoelectric heap
One block of metal-plate radiating plate 17, has effectively achieved heat dissipation, increases the thermal coupling of nanometer thermoelectric heap and ambient enviroment, nanometer heat
The surrounding of pile covers a strata imide layer 16 and plays heat-insulated effect so that there are one temperature for the hot junction of thermocouple and cold end
Degree is poor, and being based ultimately upon Seebeck effect has thermoelectrical potential to be exported from thermoelectricity output pad 22.Its final figure is as shown in figure 11, Figure 11
F-F ' it is as shown in figure 12 to sectional view.
The nanometer thermoelectric couple connected in four mode nanometer thermoelectric photovoltaic energy collection devices 3 is by N-type polycrystalline silicon nano line cluster
18 and p-type polysilicon nano line cluster 19 constitute the semiconductor arm of thermocouple, the number of nanowires that polysilicon nanowire cluster contains
For 50-200, a diameter of 1-100nm of polysilicon nanowire is highly 2-10um, N-type polycrystalline silicon nano line cluster 18 and p-type polycrystalline
It is connected with metal connecting line 20 between silicon nanowires cluster 19；In order to increase series connection four mode nanometer thermoelectric photovoltaic energy collection devices, 3 knot
The stability of structure is filled with polymethyl methacrylate 21 between thermocouple；In the surface of nanometer thermoelectric heap, it is covered with second
Silicon dioxide layer 15 plays the role of protection and electric isolation, and nanometer thermoelectric is occasionally arranged in four modes, covered among nanometer thermoelectric heap
One block of metal-plate radiating plate 17 has been covered, heat dissipation is had effectively achieved, the thermal coupling of nanometer thermoelectric heap and ambient enviroment has been increased, receives
The surrounding of rice thermoelectric pile covers a strata imide layer 16 and plays heat-insulated effect so that the hot junction of nanometer thermoelectric idol and cold end
There are one temperature differences, and being based ultimately upon Seebeck effect has thermoelectrical potential to be exported from thermoelectricity output pad 22.
Connect four mode nanometer thermoelectric photovoltaic energy collection devices operation principle it is as follows：When the four mode nanometer thermoelectrics that will connect
When the metallic heat radiating plate 17 of photovoltaic energy collection device is attached to the surface of radio-frequency receiving-transmitting component 1, heat can be from four mode nanometers of series connection
The metallic heat radiating plate 17 of thermoelectricity photovoltaic energy collection device injects, and after nanometer thermoelectric heap, is finally discharged from cold end face, and going here and there
Join and forms certain Temperature Distribution on four mode nanometer thermoelectric photovoltaic energy collection devices.Since there are certain heat for nanometer thermoelectric heap
Resistance, will produce the corresponding temperature difference, based on Seebeck effect nanometer thermoelectric heap both ends between the cold and hot node of nanometer thermoelectric heap
Thermoelectricity output pad 22 can export the potential directly proportional to the temperature difference；While four mode nanometer thermoelectric photovoltaic energy collection devices of connecting
Photocell can collect the luminous energy in environment and be converted to electric energy, and exporting pad 14 by photo-electric is exported.By the electricity of output
Signal is converted into direct current signal by DC-DC conversion modules 4 and is stored in rechargeable battery 6, for being supplied to wireless sensing node 5
Electricity finally realizes green communications.
The preparation method of the four mode nanometer thermoelectric photovoltaic energy collection device of series connection of the present invention is as follows：
1) select N-type silicon chip 7 as substrate, the doping concentration of phosphorus is 1 × 1015cm-3, resistivity is about 5 Ω cm, is made
Preceding carry out twin polishing, and impregnate in a solution of hydrofluoric acid, remove the impurity such as metallic particles；
2) matte 8 is made using a kind of additive making herbs into wool optimize technique, the volume ratio of HF/HNO3 is 1 in Woolen-making liquid:2~
1:6 (example, 1:3,1:4) it is 6~25 DEG C of (examples 6 that, dispersant, which is less than 0.1% (example 0.09%, 0.05%, 0.01%) corrosion temperature,
DEG C, 15 DEG C, 25 DEG C), about 4~5 μm of silicon chip thinning single surface amount；
3) deposit prepares one layer of plating aluminium oxide film layer 9；
4) nano modification technique is used to carry out the modification cleaning of surface microcell, nano modification technique is to contain organic base and leaching
Moisten the silicon chip after the alkaline aqueous solution processing diffusion of agent, it is alkylammonium to remove the microdefect of silicon chip surface and objectionable impurities organic base
Class, the weight percentage of organic base in aqueous solution are 0.1~10% (example 0.1%, 5%, 10%)；Size is water-soluble
Weight percentage in liquid is less than 0.1% (example 0.09%, 0.05%, 0.01%).When silicon chip is handled in this alkaline solution
Temperature be 25~85 DEG C (25 DEG C, 55 DEG C, 85 DEG C of examples), the time be 30 seconds~15 minutes (example 30 seconds, 5 minutes, 15 minutes).
5) porous anodic alumina template is used for light by utilizing two step anodic oxidation electrochemical processes to obtain on supporting layer
The doping of electric solar energy nano array structure.
6) zinc acetate [Zn (CH3COO) 22H20] is used as zinc source, and zinc acetate and ethanol amine are dissolved in 200mL in proportion
Ethylene glycol monomethyl ether and be sufficiently stirred, place at room temperature be aged 3~5 days formed gel.Porous anodic alumina template is shifted
Print is obtained to silicon substrate, gel is thrown to by surface of silicon using spin-coating method, 3-9 layers of spin coating is put into baking after every 1 layer of spin coating
Oven for baking makes extra solution evaporation, is conducive to the generation of ZnO film.It is finally putting into subliming furnace at 450 DEG C of high warms
Reason, drying form good ZnO film, obtain the substrate N-shaped doped region 10 of solar energy electrical part nano array structure；
7) porous anodic alumina template is transferred to silicon substrate and obtains print, (e.g., p-type dopant is carried out to print
Boron) it adulterates, obtain the substrate P-doped zone of solar energy electrical part nano array structure.
8) it uses pecvd process to deposit silicon nitride and the photoetching molding of one layer of 100nm, as silicon nitride layer 12, and exposes
Go out electrode contact region；
9) layer gold and the photoetching for evaporating one layer of 2 μ m-thick, form photocell electrode 13；
10) pecvd process is used to deposit the first silicon dioxide layer 23, as electrical insulator layer；
11) low-pressure chemical vapor phase deposition (LPCDV) technique is used to grow a layer thickness for 2 μm of polysilicon；
12) it uses LPCVD techniques growth layer of silicon dioxide as mask layer, deep-UV lithography, shape is carried out to polysilicon
At polysilicon nanometer cable architecture；
13) doping of N-type phosphonium ion is carried out to the corresponding region of polysilicon nanowire respectively and p-type boron ion is adulterated, respectively
Form N-type polycrystalline silicon nano line cluster 18 and p-type polysilicon nano line cluster 19；
14) gap between one strata methyl methacrylate 21 of spin coating filling thermocouple, improves the steady of electric generator structure
It is qualitative；
15) layer gold that evaporation a layer thickness is 0.3 μm, stripping method molding, as metal contact wires 20 on nanometer thermoelectric heap；
16) two silicon dioxide layer 15 of pecvd process growth regulation is used, thickness is 0.1 μm, as dielectric insulation layer；
17) metallic aluminium that plating a layer thickness is 1 μm, the metallic heat radiating plate 17 as device.
18) polyimide layer 16 that deposit a layer thickness is 1 μm, the nanometer thermoelectric idol outer insulative layer as device.
Distinguish whether be the structure standard it is as follows：
The four mode nanometer thermoelectric photovoltaic energy collection device of series connection of the present invention includes photocell and thermoelectric energy collector, light
Battery includes N-type silicon chip substrate 7, matte 8, plating aluminium oxide film layer 9, substrate N-shaped doped region 10, substrate p-type doping 11, silicon nitride
Layer 12, photocell electrode 13, photoelectric yield pad 14, thermoelectric energy collector includes nanometer thermoelectric heap, the second silicon dioxide layer
15, polyimide layer 16, metallic heat radiating plate 17, nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster 18, p-type polysilicon nanometer
Line cluster 19, metal connecting line 20, polymethyl methacrylate 21 and thermoelectricity export pad 22, photocell and thermoelectric energy collector by
First silicon dioxide layer of protection 23 carries out electric isolation.Thermocouple is connected in series, and thermoelectrical potential is carried out defeated by thermoelectricity output pad 22
Go out, nanometer thermoelectric heap is arranged in four modes, and the centre of nanometer thermoelectric heap covers one layer of metallic heat radiating plate 17 and is used as nanometer thermoelectric
The hot junction heat-conducting layer of heap, it is heat-insulated as the cold end of nanometer thermoelectric heap that the surrounding of nanometer thermoelectric heap covers a strata imide layer 16
Layer.Polymethyl methacrylate 21 is used to fill the gap between thermocouple, improves the stability of energy harvester structure.Series connection
Four mode nanometer thermoelectric photovoltaic energy collection devices are even as generating element using nanometer thermoelectric, have the characteristics that it is small, while with
Traditional thermoelectric energy collector is compared, and the thermal conductivity of nanometer thermoelectric idol is lower, has higher thermoelectric conversion efficiency, collection
The electric energy of collection is converted into DC signal by energy by DC-DC conversion modules 4, is ultimately stored in rechargeable battery 6.Charging
Electricity in battery 6 may be implemented, to the power supply of wireless sensing node 5, finally to realize green communications.
The structure for meeting conditions above is considered as the four mode nanometer thermoelectric photovoltaic energy collection device of series connection of the present invention.
Claims (2)
1. a kind of four mode nanometer thermoelectric photovoltaic energy collection devices of series connection, it is characterised in that：The four mode nanometer heat of series connection
Electric light electric flux collector includes photocell and thermoelectric energy collector；Photocell includes N-type silicon chip substrate (7), matte (8),
Plating aluminium oxide film layer (9), substrate N-shaped doped region (10), substrate p-type adulterate (11), silicon nitride layer (12), photocell electrode
(13), (14) photoelectric yield pad；Thermoelectric energy collector includes nanometer thermoelectric heap, the second silicon dioxide layer (15), polyimides
Layer (16), metallic heat radiating plate (17), nanometer thermoelectric heap includes N-type polycrystalline silicon nano line cluster (18), p-type polysilicon nano line cluster
(19), metal connecting line (20), polymethyl methacrylate (21) and thermoelectricity output pad (22)；Photocell and thermoelectric energy are collected
Device carries out electric isolation by the first silicon dioxide layer of protection (23)；The four mode nanometer thermoelectric photovoltaic energy collection device of series connection
Even as thermoelectric generation elements using nanometer thermoelectric, the energy of collection exports pad (22) even by photoelectric yield pad (14) and thermoelectricity
It connects to DC-DC conversion modules (4)；The energy harvester major function be collect radio-frequency receiving-transmitting component amplifiers (1) thermal energy and
Luminous energy in environment is powered to wireless sensing node (5)；Four mode nanometer thermoelectric photovoltaic energy collection devices (3) connect by collection
The electric energy of collection is converted into DC signal by energy by DC-DC conversion modules (4), is ultimately stored in rechargeable battery (6),
Electricity in rechargeable battery (6) may be implemented to the power supply of wireless sensing node (5)；N-type polycrystalline silicon nano line cluster (18) and p-type are more
The polysilicon nanowire quantity that crystal silicon nano line cluster (19) contains is 50-200, and polysilicon nanowire is formed by deep 0 ultraviolet photolithographic,
A diameter of 1-100nm is highly 2-10um；It is sharp between N-type polycrystalline silicon nano line cluster (18) and p-type polysilicon nano line cluster (19)
It is attached with metal contact wires (20).
2. a kind of four mode nanometer thermoelectric photovoltaic energy collection devices of series connection according to claim 1, it is characterised in that：N-type
It is filled with polymethyl methacrylate (21) between polysilicon nanowire cluster (18) and p-type polysilicon nano line cluster (19), plays height
The stability of energy harvester structure.
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