CN108761887B - 阵列基板及显示面板 - Google Patents
阵列基板及显示面板 Download PDFInfo
- Publication number
- CN108761887B CN108761887B CN201810399220.4A CN201810399220A CN108761887B CN 108761887 B CN108761887 B CN 108761887B CN 201810399220 A CN201810399220 A CN 201810399220A CN 108761887 B CN108761887 B CN 108761887B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal pattern
- array substrate
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 description 23
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 102100040014 GH3 domain-containing protein Human genes 0.000 description 1
- 101000886770 Homo sapiens GH3 domain-containing protein Proteins 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
本发明提出了一种阵列基板及显示面板,所述阵列基板包括第一区域和第二区域,所述第一区域与显示面板的显示区域对应;所述第二区域与所述显示面板的非显示区域对应;本发明通过在第二区域中的所述基板与所述导线之间设置至少一金属图案,提升了该区域膜层结构的硬度,减小了阵列基板在切割裂片时所产生的形变,防止了导线的断裂,提高了产品的良率。
Description
技术领域
本发明涉及平板显示器领域,特别涉及一种阵列基板及显示面板。
背景技术
LCD(Liquid crystal displays,液晶显示器)是一种被广泛应用的平板显示器,主要是通过液晶开关调制背光源光场强度来实现画面显示。LCD显示装置中包括TFT(ThinFilm Transistor,薄膜晶体管)器件,而TFT-LCD即薄膜场效应晶体管液晶显示器,此类显示器上的每一液晶象素点都是由集成在其后的薄膜晶体管来驱动,因而具有高反应速度、高亮度、高对比度、体积小、功耗低、无辐射等特点,在当前的显示器市场中占据主导地位。
现有技术中,基于成本的考虑,加工形成的阵列基板与彩膜基板贴合后需要被切割形成若干块大小相等的显示面板。其中,显示面板包括阵列基板切割线和彩膜基板切割线,彩膜基板切割线与显示区域的间距小于阵列基板切线与显示区域的间距;因此,彩膜基板基板切割线位于所述阵列基板外围走线的上方。
对所述彩膜基板进行切割时,切割时所产生的力对与之对应阵列基板上的膜层结构产生形变,而膜层结构上的金属走线因形变而出现不可恢复的断裂,使得显示面板产生异常,降低产品的良率。
发明内容
本发明提供一种阵列基板及显示面板,以解决现有彩膜基板进行产品切割时出现断线的技术问题。
为解决上述问题,本发明提供的技术方案如下:
本发明提供一种阵列基板,其中,所述阵列基板包括:
第一区域,所述第一区域与显示面板的显示区域对应;
第二区域,设置于所述第一区域的外侧,所述第二区域与所述显示面板的非显示区域对应,
所述第二区域包括基板、形成于所述基板之上的至少一无机层以及形成于所述无机层上导线,
其中,所述第二区域还包括至少一金属图案,所述金属图案形成于所述基板与所述导线之间。
根据本发明一优选实施例,所述金属图案或部分所述金属图案被所述导线遮挡。
根据本发明一优选实施例,所述阵列基板还包括第一切割边界和第二切割边界,所述第一切割边界和所述导线交叉;
所述第一切割边界和所述第二切割边界与所述第一区域的第一边界互相平行,所述第一切割边界与所述第一边界的间距小于所述第二切割边界与所述第一边界的间距。
根据本发明一优选实施例,所述金属图案形成于所述第一切割边界与所述导线交叉点的下方。
根据本发明一优选实施例,所述无机层包括形成于所述基板上的缓冲层、介质层以及平坦层,所述基板与所述无机层或相邻两所述无机层之间包括至少一金属图案。
根据本发明一优选实施例,所述金属图案包括第一金属图案、第二金属图案或第三金属图案中一种或多种的组合;
其中,所述第一金属图案与所述第一区域中的遮光层对应,所述第二金属图案与所述第一区域中的栅极层对应,所述第三金属图案与所述第一区域中的源漏极对应。
根据本发明一优选实施例,所述第一金属图案形成于所述基板之上,位于所述基板与所述缓冲层之间;
所述第二金属图案形成于所述缓冲层上,位于所述缓冲层与所述介质层之间;
所述第三金属图案形成于所述介质层上,位于所述介质层与所述平坦层之间。
根据本发明一优选实施例,所述第一金属图案和所述遮光层通过第一构图工艺形成,所述第二金属图案和所述栅极通过第二构图工艺形成,所述第三金属图案和所述源漏极通过第三构图工艺形成。
根据本发明一优选实施例,所述阵列基板还包括第一绝缘层和第二绝缘层;
所述第一绝缘层形成于所述无机层上,所述导线形成于所述第一绝缘层上,所述第二绝缘层形成于所述导线上。
本发明还提出了一种显示面板,所述显示面板包括上述阵列基板。
有益效果:本发明通过在第二区域中的所述基板与所述导线之间设置至少一金属图案,提升了该区域膜层结构的硬度,减小了阵列基板在切割裂片时所产生的形变,防止了导线的断裂,提高了产品的良率。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明优选实施例一种阵列基板的俯视图;
图2为图1第一切割边界AB所对应的阵列基板的膜层结构图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
图1所示为本发明优选实施例一种阵列基板的俯视图,其中,所述阵列基板包括第一区域和第二区域,所述第一区域所对应的面积为区域MNFE;
本实施例中,所述第一区域与显示面板的显示区域对应,所述第二区域与显示面板的非显示区域对应,设置于所述第一区域的外侧,即除去区域MNFE的区域GHDC;
所述阵列基板还包括第一切割边界AB和第二切割边界CD,所述第一切割边界AB和所述第二切割边界CD位于所述第二区域,所述第一切割边界AB和所述第二切割边界CD仅仅为切割的参考线,不具有其他意义;
本实施例中,所述第一切割边界AB为彩膜基板切割线,所述第二切割边界CD为阵列基板切割线;由于彩膜基板的面积小于阵列基板的面积,因此需要对彩膜基板进行切割;
其中,图1中的区域ABHG为彩膜基板,区域GHCD为阵列基板,即根据第一切割边界AB对所述阵列基板所对应的彩膜基板进行切割,去除区域ABDC,所述第二切割边界CD为阵列基板的切割参考线。
本实施例中,所述第一切割边界AB和所述第二切割边界CD与所述第一区域的第一边界EF互相平行,所述第一切割边界AB与所述第一边界EF的间距小于所述第二切割边界CD与所述第一边界EF的间距。
图2所示为图1中第一切割边界AB所对应的阵列基板的膜层结构图,所述第二区域包括基板101、形成于所述基板101之上的至少一无机层以及形成于所述无机层上导线102,
其中,所述第二区域还包括至少一金属图案,所述金属图案形成于所述基板101与所述导线102之间。
本实施例中,所述金属图案形成于所述导线102的下方,即所述金属图案或部分所述金属图案被所述导线102的图案所遮挡;优选的,为了节约原材料或保证阵列基板光的透过率,所述金属图案还可以仅存在于所述第一切割边界AB下方,即所述第一切割边界AB和所述导线102交叉点的下方。
本实施例中,所述无机层包括形成于所述基板101上的缓冲层103、介质层104以及平坦层105,所述基板101与所述无机层或相邻两所述无机层之间包括至少一金属图案,所述金属图案包括第一金属图案106、第二金属图案107或第三金属图案108中一种或多种的组合;
如图2所示,本实施例中,所述第二区域包括三层金属图案,即第一金属图案106、第二金属图案107或第三金属图案108;其中,所述第一金属图案106形成所述基板101之上,位于所述基板101与所述缓冲层103之间;所述第二金属图案107形成于所述缓冲层103上,位于所述缓冲层103与所述介质层104之间;所述第三金属图案108形成于所述介质层104上,位于所述介质层104与所述平坦层105之间;
另外,所述第一区域,即显示区域包括遮光层、栅极以及源漏极;本实施例中,所述第一金属图案与所述第一区域中的遮光层对应,所述第二金属图案与所述第一区域中的栅极层应,所述第三金属图案与所述第一区域中的源漏极对应;
即所述第一金属图案106和所述遮光层为所述阵列基板的同一膜层结构,所述第二金属图案107和所述栅极为所述阵列基板的同一膜层结构,所述第三金属图案108和所述源漏极为所述阵列基板的同一膜层结构;即,所述第一金属图案106和所述遮光层通过第一构图工艺形成,所述第二金属图案107和所栅极通过第二构图工艺形成,所述第三金属图案108和所述源漏极通过第三构图工艺形成;即本发明所增加的金属图案不需要增加其他的光罩工艺,即可提高产品的良率。
如图2所示,位于所述第二区域的所述阵列基板还包括第一绝缘层109和第二绝缘层110;所述第一绝缘层109形成于所述无机层上,所述导线102形成于所述第一绝缘层109上,所述第二绝缘层110形成于所述导线102上。
当所述彩膜基板按照第一切割边界进行切割时,由于所述第一切割边界所对应的阵列基板相比现有技术增加了至少一金属图案,由于金属具有比较高的硬度,因此该区域相比现有技术膜层结构所能承受的最大应力变大,使得受到同等切割力的作用时,该区域的膜层结构所发生的形变量变小,防止了导线的断裂,提高了产品的良率;另外,为了保证阵列基板光的透过率,所述金属图案均设置在导线的下方,被导线被覆盖。
本发明还提出了一种显示面板,所述显示面板包括上述阵列基板。
本发明提出了一种阵列基板及显示面板,所述阵列基板包括第一区域和第二区域,所述第一区域与显示面板的显示区域对应;所述第二区域与所述显示面板的非显示区域对应,设置于所述第一区域的外侧;位于所述第二区域的所述阵列基板包括基板、形成于所述基板之上的至少一无机层以及形成于所述无机层上导线;另外,所述第二区域还包括至少一金属图案,所述金属图案形成于所述基板与所述导线之间;本发明通过在第二区域中的所述基板与所述导线之间设置至少一金属图案,提升了该区域膜层结构的硬度,减小了阵列基板在切割裂片时所产生的形变,防止了导线的断裂,提高了产品的良率。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (6)
1.一种阵列基板,其特征在于,所述阵列基板包括:
第一区域,所述第一区域与显示面板的显示区域对应;
第二区域,设置于所述第一区域的外侧,所述第二区域与所述显示面板的非显示区域对应,包括:
基板、形成于所述基板之上的至少一无机层以及形成于所述无机层上的导线、以及形成于所述基板与所述导线之间的至少一金属图案;
所述阵列基板还包括第一切割边界和第二切割边界,所述第一切割边界和所述导线交叉,所述第一切割边界和所述第二切割边界与所述第一区域的第一边界互相平行,所述第一切割边界与所述第一边界的间距小于所述第二切割边界与所述第一边界的间距;
所述金属图案形成于所述第一切割边界与所述导线交叉点的下方,所述金属图案或部分所述金属图案被所述导线遮挡;
所述金属图案包括第一金属图案、第二金属图案或第三金属图案中一种或多种的组合,所述第一金属图案与所述第一区域中的遮光层对应,所述第二金属图案与所述第一区域中的栅极层对应,所述第三金属图案与所述第一区域中的源漏极对应。
2.根据权利要求1所述的阵列基板,其特征在于,所述无机层包括形成于所述基板上的缓冲层、介质层以及平坦层,所述基板与所述无机层或相邻两所述无机层之间包括至少一金属图案。
3.根据权利要求2所述的阵列基板,其特征在于,所述第一金属图案形成于所述基板之上,位于所述基板与所述缓冲层之间;
所述第二金属图案形成于所述缓冲层上,位于所述缓冲层与所述介质层之间;
所述第三金属图案形成于所述介质层上,位于所述介质层与所述平坦层之间。
4.根据权利要求2所述的阵列基板,其特征在于,所述第一金属图案和所述遮光层通过第一构图工艺形成,所述第二金属图案和所述栅极通过第二构图工艺形成,所述第三金属图案和所述源漏极通过第三构图工艺形成。
5.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板还包括第一绝缘层和第二绝缘层;
所述第一绝缘层形成于所述无机层上,所述导线形成于所述第一绝缘层上,所述第二绝缘层形成于所述导线上。
6.一种显示面板,其特征在于,所述显示面板包括如权利要求1~5任一项所述的阵列基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810399220.4A CN108761887B (zh) | 2018-04-28 | 2018-04-28 | 阵列基板及显示面板 |
PCT/CN2018/099112 WO2019205341A1 (zh) | 2018-04-28 | 2018-08-07 | 阵列基板及显示面板 |
US16/306,589 US11205666B2 (en) | 2018-04-28 | 2018-08-07 | Array substrate and display panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810399220.4A CN108761887B (zh) | 2018-04-28 | 2018-04-28 | 阵列基板及显示面板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108761887A CN108761887A (zh) | 2018-11-06 |
CN108761887B true CN108761887B (zh) | 2020-03-27 |
Family
ID=64012259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810399220.4A Active CN108761887B (zh) | 2018-04-28 | 2018-04-28 | 阵列基板及显示面板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11205666B2 (zh) |
CN (1) | CN108761887B (zh) |
WO (1) | WO2019205341A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113570971B (zh) * | 2021-07-30 | 2022-08-23 | 惠科股份有限公司 | 显示面板及显示设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102253544A (zh) * | 2011-07-29 | 2011-11-23 | 南京中电熊猫液晶显示科技有限公司 | 液晶显示装置 |
CN202585418U (zh) * | 2012-03-31 | 2012-12-05 | 北京京东方光电科技有限公司 | 一种阵列基板的外围电路、阵列基板及液晶显示装置 |
CN202631908U (zh) * | 2012-07-06 | 2012-12-26 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN104362153A (zh) * | 2014-09-17 | 2015-02-18 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN104834143A (zh) * | 2015-06-03 | 2015-08-12 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN107037648A (zh) * | 2017-01-13 | 2017-08-11 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板、显示装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100840310B1 (ko) * | 2001-06-28 | 2008-06-20 | 삼성전자주식회사 | 다중 도메인 액정 표시 장치 |
US20090225020A1 (en) | 2008-03-07 | 2009-09-10 | O2Micro, Inc. | Backlight controller for driving light sources |
KR101289639B1 (ko) | 2008-07-04 | 2013-07-30 | 엘지디스플레이 주식회사 | 백라이트 유닛의 광원 구동장치 및 방법 |
US8237700B2 (en) | 2009-11-25 | 2012-08-07 | Freescale Semiconductor, Inc. | Synchronized phase-shifted pulse width modulation signal generation |
JP5591581B2 (ja) | 2010-04-23 | 2014-09-17 | ローム株式会社 | 発光装置、電子機器、発光ダイオードストリングの駆動方法 |
US20120098869A1 (en) | 2010-10-22 | 2012-04-26 | Himax Analogic, Inc. | Light Emitting Diode Circuit, Light Emitting Diode Driving Circuit, and Method for Driving Light Emitting Diode Channels |
CN102737602A (zh) | 2012-06-26 | 2012-10-17 | 青岛海信电器股份有限公司 | 液晶显示装置及显示控制方法 |
CN103280189A (zh) | 2013-05-17 | 2013-09-04 | 深圳市华星光电技术有限公司 | 一种led调光电路 |
KR101667800B1 (ko) * | 2014-08-29 | 2016-10-20 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 이의 제조 방법 |
KR102456654B1 (ko) * | 2014-11-26 | 2022-10-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
CN105336684A (zh) * | 2015-10-22 | 2016-02-17 | 京东方科技集团股份有限公司 | 多晶硅阵列基板的制作方法、多晶硅阵列基板及显示面板 |
KR102606279B1 (ko) * | 2016-04-04 | 2023-11-27 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN205751478U (zh) | 2016-06-08 | 2016-11-30 | 联想(北京)有限公司 | 背光模组及显示设备 |
KR102659422B1 (ko) * | 2016-10-17 | 2024-04-22 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그 제조 방법 |
CN107369693B (zh) * | 2017-08-04 | 2020-04-21 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板 |
KR102482822B1 (ko) * | 2017-10-24 | 2022-12-30 | 삼성디스플레이 주식회사 | 표시 장치 |
-
2018
- 2018-04-28 CN CN201810399220.4A patent/CN108761887B/zh active Active
- 2018-08-07 US US16/306,589 patent/US11205666B2/en active Active
- 2018-08-07 WO PCT/CN2018/099112 patent/WO2019205341A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102253544A (zh) * | 2011-07-29 | 2011-11-23 | 南京中电熊猫液晶显示科技有限公司 | 液晶显示装置 |
CN202585418U (zh) * | 2012-03-31 | 2012-12-05 | 北京京东方光电科技有限公司 | 一种阵列基板的外围电路、阵列基板及液晶显示装置 |
CN202631908U (zh) * | 2012-07-06 | 2012-12-26 | 京东方科技集团股份有限公司 | 显示面板及显示装置 |
CN104362153A (zh) * | 2014-09-17 | 2015-02-18 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN104834143A (zh) * | 2015-06-03 | 2015-08-12 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN107037648A (zh) * | 2017-01-13 | 2017-08-11 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示面板、显示装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2019205341A1 (zh) | 2019-10-31 |
CN108761887A (zh) | 2018-11-06 |
US20210225894A1 (en) | 2021-07-22 |
US11205666B2 (en) | 2021-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102159830B1 (ko) | 표시소자 | |
US20230221594A1 (en) | Display device | |
KR102320514B1 (ko) | 터치 방식 액정표시장치 | |
CN108490708B (zh) | 阵列基板及显示面板 | |
US10152931B2 (en) | Display device | |
KR20170039001A (ko) | 인셀 터치 방식 표시장치 | |
US9146436B2 (en) | Liquid crystal panel | |
CN108831910B (zh) | 显示面板 | |
CN109065571B (zh) | 显示面板及电子装置 | |
KR101305071B1 (ko) | 어레이 기판 및 이를 갖는 표시패널 | |
US20180341159A1 (en) | Coa substrate and liquid crystal display panel | |
JP2002014363A (ja) | フリンジフィールドスイッチングモード液晶表示装置 | |
KR101993283B1 (ko) | 네로우 베젤 타입 액정표시장치용 어레이 기판 | |
KR20190112228A (ko) | 표시 장치 | |
KR102019066B1 (ko) | 베젤이 최소화된 액정표시소자 | |
JP2016212391A (ja) | 表示装置 | |
CN108761887B (zh) | 阵列基板及显示面板 | |
US20190302555A1 (en) | Array substrate and display panel | |
KR20150002344A (ko) | 협 베젤 구조를 갖는 평판 표시 패널 | |
KR101890734B1 (ko) | 액정표시패널 | |
KR101182302B1 (ko) | 액정표시장치 및 이의 제조방법 | |
KR20070041934A (ko) | 액정 표시 장치 | |
CN107144999B (zh) | 内嵌式触摸屏 | |
KR102052741B1 (ko) | 액정 디스플레이 장치 | |
KR20080003998A (ko) | 액정표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |