CN108681168B - 一种阵列基板、显示面板及显示设备 - Google Patents

一种阵列基板、显示面板及显示设备 Download PDF

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CN108681168B
CN108681168B CN201810680920.0A CN201810680920A CN108681168B CN 108681168 B CN108681168 B CN 108681168B CN 201810680920 A CN201810680920 A CN 201810680920A CN 108681168 B CN108681168 B CN 108681168B
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array substrate
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CN108681168A (zh
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浠荤淮
任维
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2018/096923 priority patent/WO2020000549A1/zh
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    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133388Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
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    • G02F1/1362Active matrix addressed cells
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Abstract

本申请公开了一种阵列基板、显示面板及显示设备,所述阵列基板包括显示区和非显示区,非显示区内设置有多组配向焊盘,每组配向焊盘分别电连接相对应的配向走线,其中,配向焊盘分为高电位焊盘和低电位焊盘,高电位焊盘对应的配向走线设置在高电位走线区,低电位焊盘对应的配向走线设置在低电位走线区,高电位走线区和低电位走线区分别位于多组配向焊盘的两侧。通过上述方式,本申请能够降低配向走线间产生静电的风险,提高产品的静电防护能力。

Description

一种阵列基板、显示面板及显示设备
技术领域
本申请涉及显示技术领域,特别是涉及一种阵列基板、显示面板及显示设备。
背景技术
随着电子技术的发展,电子产品逐渐的轻、薄、短、小化,其内部的电子元器件不断小型化,集成电路的集成度不断提高,这使得单元线路越来越窄,相应的静电耐受能力越来越差,静电敏感度越来越高。而静电已成为电子工业中造成器件失效、产成品合格率低及其早期失效的主要原因,严重影响产品直通率及质量稳定性与可靠性,给制造商的生产成本、声誉造成不良影响。
目前市场上的TFT-LCD显示面板中,垂直配向(Vertically aligned,VA)型液晶显示面板因其具有极高的对比度,在大尺寸显示,如电视等方面具有非常广的应用。而高垂直排列(High Vertically aligned,HVA)模式是VA模式中一个重要的分支。HVA型液晶显示面板工作时是由阵列基板侧的像素电极和彩膜基板侧的公共电极形成的垂直电场来控制液晶层的液晶分子的旋转。
在VA模式的液晶显示面板通过聚合物稳定配向的方式进行配向时,需要对液晶层施于固化预定电压,并在该电压下通过光线照射,使液晶层中的反应性单体聚合并固化,从而在液晶层两侧的基板上同时形成聚合物层,使液晶单元产生一定的偏转角度,从而完成液晶光配向过程。
在液晶光配向中,需要在液晶显示面板的周围预先形成光配向走线,以实现固化预定电压等的施加操作。当配向走线较多时,容易出现跨线,而在跨线处易产生静电释放,使走线损坏,进而影响液晶显示面板的配向。
请参阅图1,图1是现有技术中阵列基板外围配向走线示意图。每组配向焊盘中包括用于输入彩膜基板公共电压的彩膜基板公共电压焊盘CF-com,用于输入阵列基板公共电压的阵列基板公共电压焊盘A-com,用于输入时钟信号的n个时钟焊盘CK1、CK2、CK3、CK4、CK5、CK6……CKn,用于输入低频时钟信号的低频时钟焊盘LC1、LC2,用于输入起始信号的起始信号焊盘ST,用于输入公共端电压的公共电压焊盘Vss,用于输入像素电极数据信号电压的数据信号电压焊盘R、G、B。配向走线区设置有第一金属层M1、绝缘层AS、第二金属层M2,每组配向走线由主走线(1101、1201等)和连接线(1202等)组成,主走线(1101、1201等)设置在第一金属层M1,连接线(1202等)设置在第二金属层M2,第一金属层M1和第二金属层M2由绝缘层AS隔开,第一金属层M1和第二金属层M2的走线通过绝缘层AS的通孔电连接。
请参阅图2-图4,图2-图4是现有技术中发生静电短路的效果示意图。在进行液晶配向时,焊盘CF-com用于接入高电位信号(H),而焊盘A-com、时钟焊盘CK1、CK2、CK3、CK4、CK5、CK6……CKn、低频时钟焊盘LC1、LC2、起始信号焊盘ST、公共电压焊盘Vss、数据信号电压焊盘R、G、B则用于接入低电位信号(L),在连接线(1202等)跨越主走线1101时,由于跨线区域A处的电位信号差异较大,容易产生静电(ESD),如图2所示,静电的产生会导致焊盘CF-com与其他焊盘信号发生短路,短路的产生又容易导致加载CF-com高信号的电位被拉低,进而导致液晶无法感受到配向所需的电压差,既而导致液晶配向异常。如图3所示,易发生静电短路的跨线区域一般有两种,一种是具有高电位的焊盘CF-com的连接线3102与具有低电位的其他焊盘的主走线3201、3301、3401、3501等的跨线区域(图3a所示),另一种是具有高电位的焊盘CF-com的主走线3101与具有低电位的其他焊盘的连接线3202、3302等的跨线区域(图3b所示)。
本申请的发明人在长期的研发过程中,发现在液晶显示(Liquid CrystalDisplay,LCD)领域,采用阵列基板行驱动(Gate Driver On Array,GOA)技术的阵列基板,其外围信号走线明显多于非GOA产品,跨线区域也相应增多,而跨线区容易产生静电,产生静电的风险也将增大,因此需要提高产品的静电防护能力。
发明内容
本申请主要解决的技术问题是提供一种阵列基板、显示面板及显示设备,能够降低配向走线间产生静电的风险,提高产品的静电防护能力。为解决上述技术问题,本申请采用的一个技术方案是:提供一种阵列基板,所述阵列基板包括显示区和非显示区,非显示区内设置有多组配向焊盘,每组配向焊盘分别电连接相对应的配向走线,其中,配向焊盘分为高电位焊盘和低电位焊盘,高电位焊盘对应的配向走线设置在高电位走线区,低电位焊盘对应的配向走线设置在低电位走线区,高电位走线区和低电位走线区分别位于多组配向焊盘的两侧。
为解决上述技术问题,本申请采用的另一个技术方案是:提供一种显示面板,所述显示面板包括阵列基板,所述阵列基板包括显示区和非显示区,非显示区内设置有多组配向焊盘,每组配向焊盘分别电连接相对应的配向走线,其中,配向焊盘分为高电位焊盘和低电位焊盘,高电位焊盘对应的配向走线设置在高电位走线区,低电位焊盘对应的配向走线设置在低电位走线区,高电位走线区和低电位走线区分别位于多组配向焊盘的两侧。
为解决上述技术问题,本申请采用的另一个技术方案是:提供一种显示设备,所述显示设备包括显示面板,所述显示面板包括阵列基板,所述阵列基板包括显示区和非显示区,非显示区内设置有多组配向焊盘,每组配向焊盘分别电连接相对应的配向走线,其中,配向焊盘分为高电位焊盘和低电位焊盘,高电位焊盘对应的配向走线设置在高电位走线区,低电位焊盘对应的配向走线设置在低电位走线区,高电位走线区和低电位走线区分别位于多组配向焊盘的两侧。
本申请的有益效果是:区别于现有技术的情况,本申请所提供的阵列基板,通过将配向走线按照电位高低进行分区,使电位相近的走线设置在同一区域,能够避免出现电位差异较大的跨线区,防止产生静电短路现象,提高产品的静电防护能力。
附图说明
图1是现有技术中阵列基板外围配向走线示意图;
图2是现有技术中发生静电短路的效果示意图;
图3是现有技术中发生静电短路的效果示意图;
图4是现有技术中发生静电短路的效果示意图;
图5是本申请阵列基板第一实施方式的结构示意图;
图6是是图5中非显示区的配向走线示意图;
图7是本申请阵列基板第一实施方式的外围配向走线示意图;
图8是本申请阵列基板第二实施方式的外围配向走线示意图;
图9是本申请显示面板第一实施方式的结构示意图;
图10是本申请显示设备第一实施方式的结构示意图。
具体实施方式
为使本申请的目的、技术方案及效果更加清楚、明确,以下参照附图并举实施例对本申请进一步详细说明。
本申请提供一种阵列基板,请参阅图5-图6,图5是本申请阵列基板第一实施方式的结构示意图,图6是图5中非显示区的配向走线示意图。在该实施方式中,阵列基板50包括显示区501和非显示区502,非显示区502内设置有多组配向焊盘503,多组配向焊盘503分别与配向走线的相应位置电连接,配向焊盘503分为高电位焊盘5031和低电位焊盘5032。其中,配向走线区504包括高电位走线区5041和低电位走线区5042,高电位走线区5041和低电位走线区5042分别位于多组配向焊盘503的两侧,高电位焊盘5031对应的配向走线设置在高电位走线区5041,低电位焊盘5032对应的配向走线设置在低电位走线区5042。通过将配向走线按照电位高低进行分区,使电位相近的走线设置在同一区域,能够避免出现电位差异较大的跨线区,防止产生静电短路,提高产品的静电防护能力。
可选地,在一实施方式中,在进行配向走线时,高电位走线区内的配向走线在配向焊盘上的正投影与低电位走线区内的配向走线在配向焊盘上的正投影互不重叠。通过这种方式,能够尽量减少跨线区。
具体地,请参阅图7,图7是本申请阵列基板第一实施方式的外围配向走线示意图。配向走线包括主走线(7101、7201等)和连接线(7102、7202等),主走线(7101、7201等)沿第一方向排列,且向第二方向延伸,连接线(7102、7202等)沿第二方向排列,且向第一方向延伸,第一方向与第二方向垂直;高电位走线区内的主走线的排列方向和延伸方向与低电位走线区内的主走线的排列方向和延伸方向相反。
图7所示情况,主走线(7101、7201等)沿竖直方向排列,并沿水平方向延伸,连接线(7102、7202等)沿水平方向排列,并沿竖直方向延伸。其中,焊盘CF-com用于接入高电位信号,其对应连接的配向走线区域为高电位走线区;焊盘A-com、时钟焊盘CK1、CK2、CK3、CK4、CK5、CK6……CKn、低频时钟焊盘LC1、LC2、起始信号焊盘ST、公共电压焊盘Vss、数据信号电压焊盘R、G、B则用于接入低电位信号,其对应连接的配向走线区域为低电位走线区。低电位走线区内的主走线(7201等)沿竖直方向逐级向上排列,并沿水平方向向左延伸;而高电位走线区内的主走线(7101)沿竖直方向逐级向下排列,并沿水平方向向右延伸,两者方向正好相反。
在另一实施方式中,也可以是高电位走线区内的主走线的排列方向与低电位走线区内的主走线的排列方向相反,但高电位走线区内的主走线的延伸方向与低电位走线区内的主走线的延伸方向相同。即图7中主走线7101也可以沿水平方向向左延伸。
可选地,在一实施方式中,将走线区内配向走线数量较少的分区设置在远离显示区的一侧,通过这种方式,能够以防边缘成膜保证区受影响。其中,若高电位走线区的配向走线的数量小于低电位走线区配向走线的数量,则将高电位走线区设置在远离显示区的一侧,而低电位走线区设置在靠近显示区的一侧;若高电位走线区配向走线的数量大于低电位走线区配向走线的数量,则将高电位走线区设置在靠近显示区的一侧,而低电位走线区设置在远离显示区的一侧。
具体地,请参阅图8,图8是本申请阵列基板第二实施方式的外围配向走线示意图。图8所示情况,焊盘CF-com、时钟焊盘CK1、CK2、CK3、CK4、CK5、CK6……CKn、低频时钟焊盘LC1、LC2、起始信号焊盘ST、公共电压焊盘Vss用于接入高电位信号,其对应连接的配向走线区域为高电位走线区;焊盘A-com、数据信号电压焊盘R、G、B则用于接入低电位信号,其对应连接的配向走线区域为低电位走线区。其中,高电位走线区的走线数量大于低电位走线区的走线数量,因此将高电位走线区设置在靠近显示区的一侧。相比图7所示的情况则相反。
本申请还提供一种显示面板,请参阅图9,图9是本申请显示面板第一实施方式的结构示意图。在该实施方式中,显示面板90包括阵列基板901,阵列基板901包括显示区和非显示区,非显示区内设置有多组配向焊盘,多组配向焊盘分别与配向走线的相应位置电连接,配向焊盘分为高电位焊盘和低电位焊盘。其中,配向走线区包括高电位走线区和低电位走线区,高电位走线区和低电位走线区分别位于多组配向焊盘的两侧,高电位焊盘对应的配向走线设置在高电位走线区,低电位焊盘对应的配向走线设置在低电位走线区。阵列基板901的具体结构特征及有益效果与上述实施方式中的相同,具体请参阅上述实施方式的描述,在此不再赘述。
本申请还提供一种显示设备,请参阅图10,图10是本申请显示设备第一实施方式的结构示意图。在该实施方式中,显示设备100包括显示面板1001,显示面板1001包括阵列基板,阵列基板包括显示区和非显示区,非显示区内设置有多组配向焊盘,多组配向焊盘分别与配向走线的相应位置电连接,配向焊盘分为高电位焊盘和低电位焊盘。其中,配向走线区包括高电位走线区和低电位走线区,高电位走线区和低电位走线区分别位于多组配向焊盘的两侧,高电位焊盘对应的配向走线设置在高电位走线区,低电位焊盘对应的配向走线设置在低电位走线区。阵列基板的具体结构特征及有益效果与上述实施方式中的相同,具体请参阅上述实施方式的描述,在此不再赘述。
以上方案,本申请所提供的阵列基板,通过将配向走线按照电位高低进行分区,使电位相近的走线设置在同一区域,能够避免出现电位差异较大的跨线区,防止产生静电短路现象,提高产品的静电防护能力。
以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。

Claims (7)

1.一种阵列基板,其特征在于,所述阵列基板包括显示区和非显示区,所述非显示区内设置有多组配向焊盘,每组所述配向焊盘分别电连接相对应的配向走线,所述配向走线包括主走线和连接线,所述主走线沿第一方向排列,且向第二方向延伸,所述连接线沿所述第二方向排列,且向所述第一方向延伸,所述第一方向与所述第二方向垂直;所述配向焊盘分为高电位焊盘和低电位焊盘,所述高电位焊盘对应的所述配向走线设置在高电位走线区,所述低电位焊盘对应的所述配向走线设置在低电位走线区,所述高电位走线区和所述低电位走线区分别位于所述多组配向焊盘的两侧,且所述高电位走线区内的所述配向走线在所述多组配向焊盘上的正投影与所述低电位走线区内的所述配向走线在所述多组配向焊盘上的正投影互不重叠;
其中,所述高电位走线区内的所述主走线的排列方向与所述低电位走线区内的所述主走线的排列方向相反,所述高电位走线区内的所述主走线的延伸方向与所述低电位走线区内的所述主走线的延伸方向相反;或
所述高电位走线区内的所述主走线的排列方向与所述低电位走线区内的所述主走线的排列方向相反,所述高电位走线区内的所述主走线的延伸方向与所述低电位走线区内的所述主走线的延伸方向相同。
2.根据权利要求1所述的阵列基板,其特征在于,所述高电位走线区内所述配向走线的数量小于所述低电位走线区内所述配向走线的数量,所述高电位走线区设置在远离所述显示区的一侧,所述低电位走线区设置在靠近所述显示区的一侧。
3.根据权利要求1所述的阵列基板,其特征在于,所述高电位走线区内所述配向走线的数量大于所述低电位走线区内所述配向走线的数量,所述高电位走线区设置在靠近所述显示区的一侧,所述低电位走线区设置在远离所述显示区的一侧。
4.根据权利要求1所述的阵列基板,其特征在于,配向走线区设置有第一金属层、绝缘层和第二金属层,所述第一金属层和所述第二金属层的走线通过所述绝缘层的通孔电连接,所述主走线设置在所述第一金属层,所述连接线设置在所述第二金属层。
5.根据权利要求1所述的阵列基板,其特征在于,每组所述配向焊盘包括:用于输入彩膜基板公共电压的彩膜基板公共电压焊盘,用于输入阵列基板公共电压的阵列基板公共电压焊盘,用于输入时钟信号的n个时钟焊盘,用于输入低频时钟信号的低频时钟焊盘,用于输入起始信号的起始信号焊盘,用于输入公共端电压的公共电压焊盘,用于输入像素电极数据信号电压的数据信号电压焊盘。
6.一种显示面板,其特征在于,所述显示面板包括如权利要求1-5任一项所述的阵列基板。
7.一种显示设备,其特征在于,所述显示设备包括如权利要求6所述的显示面板。
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