CN108666406A - High pressure white light-emitting diode - Google Patents
High pressure white light-emitting diode Download PDFInfo
- Publication number
- CN108666406A CN108666406A CN201810626424.7A CN201810626424A CN108666406A CN 108666406 A CN108666406 A CN 108666406A CN 201810626424 A CN201810626424 A CN 201810626424A CN 108666406 A CN108666406 A CN 108666406A
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- white light
- led chip
- light
- high pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000499 gel Substances 0.000 claims abstract description 14
- 239000000741 silica gel Substances 0.000 claims abstract description 14
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 13
- 239000007771 core particle Substances 0.000 claims abstract description 8
- 230000008020 evaporation Effects 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- 238000010521 absorption reaction Methods 0.000 claims abstract description 4
- 230000004907 flux Effects 0.000 claims abstract description 4
- 241000218202 Coptis Species 0.000 claims abstract description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims abstract description 3
- 241001080929 Zeugopterus punctatus Species 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920000715 Mucilage Polymers 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
A kind of high pressure white light-emitting diode, including holder（1）, phosphor gel（2）, LED chip（3）, lead（4）And transparent silica gel（5）.The white light-emitting diode is filled with layer of transparent silica gel between LED chip and phosphor gel；The LED chip is single high pressure blue-light LED chip of interior connection, is connected in series to 3 core particles by way of electrode evaporation connecting bridge and constitutes single light-emitting diode chip for backlight unit；The lead of the white light-emitting diode only has two.The present invention is filled with layer of transparent silica gel between blue-light LED chip and phosphor gel, avoids fluorescent powder from directly being contacted with the LED chip generated heat when work, can reduce the heat fade of fluorescent powder, improve the luminous flux sustainment rate of white light emitting diode.The lead of chip of the present invention is few, not only reduces welding sequence, and reduces absorption and reflection of the gold thread to light, improves the luminous efficiency of white light emitting diode.
Description
Technical field
The present invention relates to a kind of high pressure white light-emitting diodes, belong to photoelectric device technical field.
Background technology
As the promotion of semiconductor illumination technique, the decline of cost and the promotion of common people's energy conservation and environmental awareness, LED are partly led
Body illuminator is extended to the indoor universals lighting areas such as super quotient, hotel, school, household from Landscape Lighting, road lighting, at
For mainstream lighting source.
Photochromic Properties, reliability, cost of LED semiconductor lamps etc. depend on its illuminating source, i.e. LED whites are sent out
Optical diode.It is the powerful low pressure of 1W to be presently used for most of white light-emitting diode of general illumination（2.8V-3.2V）、
High current (350mA) patch type white light-emitting diode.Its white light realization method is that directly coating contains on blue-light LED chip
The fluorescent glue of YAG fluorescent powder synthesizes white light by the blue light excitated fluorescent powder that blue-light LED chip is sent out.Which is prepared white
Color light emitting diode is high current work, and junction temperature is higher when work, reduces product reliability；In addition phosphor gel directly coats
On the chip of fever, the chip of high junction temperature can cause fluorescent powder heat fade, reduce the launching efficiency of fluorescent powder, to reduce
The luminous efficiency of white light emitting diode, and color drift can be caused；Product is low-voltage, high current work, and downstream application must adopt
It is of high cost with decompression conversion driving circuit.Its product structure schematic diagram is shown in Fig. 3 and Fig. 4.
Invention content
The object of the present invention is to for the big operating current of the high-power white light-emitting diodes of existing 1W, light decay and color drift
It moves, the problems such as downstream application is of high cost, invention high pressure white light-emitting diode.
The technical solution that the present invention realizes is as follows, a kind of high pressure white light-emitting diode, including structure stand, fluorescent powder
Glue, LED chip and lead.The white light-emitting diode is filled with layer of transparent silicon between LED chip and phosphor gel
Glue；The LED chip be single high pressure blue-light LED chip of interior connection, by way of electrode evaporation connecting bridge by 3 core particles with
Concatenated mode connects and constitutes single light-emitting diode chip for backlight unit；The white light-emitting diode only has two leads.
The transparent silicon of single high pressure blue-light LED chip of interior connection, the lead of connection chip electrode and stent electrode, encapsulating LED chip
Mucilage binding fits on patch type TOP structure stands；Phosphor gel is coated with above transparent silica gel.
The transparent silica gel is avoided that fluorescent powder is directly contacted with the LED chip generated heat when work, can reduce fluorescent powder
Heat fade improves the luminous flux sustainment rate of white light emitting diode.
The operating current of single light-emitting diode chip for backlight unit after 3 core particles series connection is only 100mA, and forward voltage is
9V substantially reduces LED chip junction temperature.
The lead of the white light-emitting diode is few, only two, reduces absorption and reflection of the gold thread to light, carries
The high luminous efficiency of white light emitting diode.
The holder is patch type TOP structure stands.
The invention has the advantages that the present invention is being filled with layer of transparent between blue-light LED chip and phosphor gel
Silica gel avoids fluorescent powder from directly being contacted with the LED chip generated heat when work, can reduce the heat fade of fluorescent powder, improve white light
The luminous flux sustainment rate of light emitting diode.The lead of chip of the present invention is few, not only reduces welding sequence, and reduce gold
Absorption and reflection of the line to light, improve the luminous efficiency of white light emitting diode.
Description of the drawings
Fig. 1 is white light-emitting diode structural front view of the present invention；
Fig. 2 is white light-emitting diode structure sectional view of the present invention；
Fig. 3 is current 1W white light LED structures front view；
Fig. 4 is current 1W white light LED structures sectional view；
In figure, 1 is holder；2 be phosphor gel；3 be LED chip；4 be lead；5 be transparent silica gel.
Specific implementation mode
The specific implementation mode of the present invention is as depicted in figs. 1 and 2.
The present embodiment high pressure white light-emitting diode, including holder 1, phosphor gel 2, LED chip 3 and lead 4.
The present embodiment white light-emitting diode is filled with layer of transparent silica gel 5 between LED chip and phosphor gel；LED
Chip 3 is single high pressure blue-light LED chip of interior connection, by 3 core particles with concatenated side by way of electrode evaporation connecting bridge
Formula connects and constitutes single light-emitting diode chip for backlight unit；The lead of white light-emitting diode only has two.
High pressure blue-light LED chip, the lead of connection chip electrode and stent electrode, encapsulating LED chip are connected in single
Transparent silica gel be assemblied on patch type TOP structure stands；Phosphor gel is coated with above transparent silica gel.
Single high pressure blue-light LED chip of interior connection is to manufacture link in LED chip, by way of electrode evaporation connecting bridge
The single light-emitting diode chip for backlight unit that 3 core particles are connected in series to and are constituted, single hair after 3 core particles series connection
The operating current of luminous diode chip is only 100mA, and forward voltage is about 9V, substantially reduces LED chip junction temperature, improves white hair
Optical diode reliability.
Claims (5)
1. a kind of high pressure white light-emitting diode, including holder, phosphor gel, LED chip and lead, which is characterized in that institute
It states white light-emitting diode and is filled with layer of transparent silica gel between LED chip and phosphor gel；The LED chip is interior connection
3 core particles are connected in series to and structure by single high pressure blue-light LED chip by way of electrode evaporation connecting bridge
At single light-emitting diode chip for backlight unit；The white light-emitting diode lead only has two；
Single high pressure blue-light LED chip of interior connection, encapsulates the saturating of LED chip at the lead for connecting chip electrode and stent electrode
Bright silica gel is assemblied on holder；Phosphor gel is coated with above transparent silica gel.
2. high pressure white light-emitting diode according to claim 1, which is characterized in that the transparent silica gel is avoided that fluorescence
Powder is directly contacted with the LED chip generated heat when work, can be reduced the heat fade of fluorescent powder, be improved the light of white light emitting diode
Flux sustainment rate.
3. high pressure white light-emitting diode according to claim 1, which is characterized in that the list after 3 core particles series connection
The operating current of light-emitting diode chip for backlight unit is 100mA, and forward voltage 9V substantially reduces LED chip junction temperature.
4. high pressure white light-emitting diode according to claim 1, which is characterized in that draw in the white light-emitting diode
Line is few, reduces absorption and reflection of the gold thread to light, improves the luminous efficiency of white light emitting diode.
5. high pressure white light-emitting diode according to claim 1, which is characterized in that the holder is patch type TOP knots
Structure holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810626424.7A CN108666406A (en) | 2018-06-19 | 2018-06-19 | High pressure white light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810626424.7A CN108666406A (en) | 2018-06-19 | 2018-06-19 | High pressure white light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108666406A true CN108666406A (en) | 2018-10-16 |
Family
ID=63774861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810626424.7A Pending CN108666406A (en) | 2018-06-19 | 2018-06-19 | High pressure white light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108666406A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202259303U (en) * | 2011-09-14 | 2012-05-30 | 武汉迪源光电科技有限公司 | High pressure light-emitting diode chip |
| CN102646694A (en) * | 2012-04-20 | 2012-08-22 | 华南师范大学 | High-voltage direct-current light-emitting diode and preparation method thereof |
| CN204118126U (en) * | 2014-10-10 | 2015-01-21 | 江西联创光电科技股份有限公司 | White light-emitting diode |
| CN206349392U (en) * | 2017-01-06 | 2017-07-21 | 江西联融新光源协同创新有限公司 | One kind is based on interior connection chip high voltage light emitting diode |
-
2018
- 2018-06-19 CN CN201810626424.7A patent/CN108666406A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202259303U (en) * | 2011-09-14 | 2012-05-30 | 武汉迪源光电科技有限公司 | High pressure light-emitting diode chip |
| CN102646694A (en) * | 2012-04-20 | 2012-08-22 | 华南师范大学 | High-voltage direct-current light-emitting diode and preparation method thereof |
| CN204118126U (en) * | 2014-10-10 | 2015-01-21 | 江西联创光电科技股份有限公司 | White light-emitting diode |
| CN206349392U (en) * | 2017-01-06 | 2017-07-21 | 江西联融新光源协同创新有限公司 | One kind is based on interior connection chip high voltage light emitting diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181016 |
|
| RJ01 | Rejection of invention patent application after publication |