CN108630603A - 加工方法 - Google Patents
加工方法 Download PDFInfo
- Publication number
- CN108630603A CN108630603A CN201810224062.9A CN201810224062A CN108630603A CN 108630603 A CN108630603 A CN 108630603A CN 201810224062 A CN201810224062 A CN 201810224062A CN 108630603 A CN108630603 A CN 108630603A
- Authority
- CN
- China
- Prior art keywords
- machined object
- slot
- film
- pressure water
- high pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 22
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 143
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 113
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 69
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 69
- 239000002245 particle Substances 0.000 claims abstract description 63
- 239000007787 solid Substances 0.000 claims abstract description 56
- 230000011218 segmentation Effects 0.000 claims abstract description 37
- 239000007921 spray Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 241000790917 Dioxys <bee> Species 0.000 claims description 5
- 238000002347 injection Methods 0.000 abstract description 71
- 239000007924 injection Substances 0.000 abstract description 71
- 238000005520 cutting process Methods 0.000 abstract description 41
- 238000012545 processing Methods 0.000 abstract description 13
- 229960004424 carbon dioxide Drugs 0.000 description 68
- 238000001514 detection method Methods 0.000 description 15
- 238000001020 plasma etching Methods 0.000 description 13
- 230000004224 protection Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000007788 liquid Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 230000006978 adaptation Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000011089 carbon dioxide Nutrition 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- GCNLQHANGFOQKY-UHFFFAOYSA-N [C+4].[O-2].[O-2].[Ti+4] Chemical compound [C+4].[O-2].[O-2].[Ti+4] GCNLQHANGFOQKY-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 102000026202 W2 domains Human genes 0.000 description 1
- 108091014564 W2 domains Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-057445 | 2017-03-23 | ||
JP2017057445A JP2018160577A (ja) | 2017-03-23 | 2017-03-23 | 加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN108630603A true CN108630603A (zh) | 2018-10-09 |
Family
ID=63706320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810224062.9A Pending CN108630603A (zh) | 2017-03-23 | 2018-03-19 | 加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2018160577A (ko) |
KR (1) | KR20180108473A (ko) |
CN (1) | CN108630603A (ko) |
TW (1) | TW201835991A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109264130A (zh) * | 2018-10-29 | 2019-01-25 | 深圳市晶盛自动化设备有限公司 | 一种全自动玻璃瓶烤花脱膜机 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7242268B2 (ja) * | 2018-11-30 | 2023-03-20 | 株式会社ディスコ | ダイシング装置 |
JP7317507B2 (ja) * | 2019-01-07 | 2023-07-31 | 株式会社ディスコ | ウォータージェット加工装置及びウォータージェット加工方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104781939A (zh) * | 2012-11-23 | 2015-07-15 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
JP2016134433A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社東芝 | ダイシング装置 |
-
2017
- 2017-03-23 JP JP2017057445A patent/JP2018160577A/ja active Pending
-
2018
- 2018-03-19 CN CN201810224062.9A patent/CN108630603A/zh active Pending
- 2018-03-21 KR KR1020180032493A patent/KR20180108473A/ko not_active Application Discontinuation
- 2018-03-21 TW TW107109667A patent/TW201835991A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104781939A (zh) * | 2012-11-23 | 2015-07-15 | 奥斯兰姆奥普托半导体有限责任公司 | 用于将复合体分割成半导体芯片的方法和半导体芯片 |
JP2016134433A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社東芝 | ダイシング装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109264130A (zh) * | 2018-10-29 | 2019-01-25 | 深圳市晶盛自动化设备有限公司 | 一种全自动玻璃瓶烤花脱膜机 |
Also Published As
Publication number | Publication date |
---|---|
TW201835991A (zh) | 2018-10-01 |
KR20180108473A (ko) | 2018-10-04 |
JP2018160577A (ja) | 2018-10-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20181009 |