CN108628046A - 像素单元及其制造方法、阵列基板和显示装置 - Google Patents

像素单元及其制造方法、阵列基板和显示装置 Download PDF

Info

Publication number
CN108628046A
CN108628046A CN201710180474.2A CN201710180474A CN108628046A CN 108628046 A CN108628046 A CN 108628046A CN 201710180474 A CN201710180474 A CN 201710180474A CN 108628046 A CN108628046 A CN 108628046A
Authority
CN
China
Prior art keywords
insulating layer
public electrode
pixel unit
pixel
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710180474.2A
Other languages
English (en)
Other versions
CN108628046B (zh
Inventor
任兴凤
车璐
曾玲玲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201710180474.2A priority Critical patent/CN108628046B/zh
Priority to US15/767,515 priority patent/US20190057977A1/en
Priority to PCT/CN2017/107628 priority patent/WO2018171190A1/en
Publication of CN108628046A publication Critical patent/CN108628046A/zh
Application granted granted Critical
Publication of CN108628046B publication Critical patent/CN108628046B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明提供一种像素单元，其中，所述像素单元包括薄膜晶体管、像素电极、第一绝缘层、第二绝缘层、公共电极和公共电极线，所述公共电极线与所述公共电极电连接，所述第一绝缘层设置在所述薄膜晶体管的漏极与所述像素电极之间，所述像素电极通过贯穿所述第一绝缘层的过孔与所述漏极电连接，所述第二绝缘层设置在所述像素电极与所述公共电极线之间，以将所述像素电极与所述公共电极线绝缘间隔，且所述第二绝缘层的一部分和所述公共电极线的一部分均位于所述过孔中。本发明还提供一种阵列基板、一种显示装置、和一种像素单元的制造方法。当所述像素单元发生亮点异常时，可以方便地对对所述像素单元执行暗点化修复操作。

Description

像素单元及其制造方法、阵列基板和显示装置
技术领域
本发明涉及显示技术领域，具体地，涉及一种像素单元、该像素单元的制造方法、一种包括该像素单元的阵列基板和一种包括该阵列基板的显示装置。
背景技术
显示面板包括多个像素单元，图1中所示的是显示面板的像素单元的剖面示意图。如图所示，像素单元包括形成在衬底基板800上的薄膜晶体管100、第一绝缘层500、公共电极300和像素电极200。薄膜晶体管100包括漏极110、源极120、栅极140和有源层130。容易理解的是，栅极140和有源层130之间绝缘间隔。设置第一绝缘层500可以减小寄生电容和导线延迟(line delay)，通常该第一绝缘层500由透明树脂材料制成。像素电极200通过贯穿第一绝缘层500的过孔与薄膜晶体管的漏极110电连接。
由于制造工艺的误差，制造完成层的像素单元可能会出现亮点不良。即，在进行显示时，该像素单元显示为亮点。在包括所述像素单元的显示装置进行显示时，亮点容易被观看者所察觉，影响观看感受。
产生亮点的原因有多种，例如，当像素单元中薄膜晶体管的半导体层为n+a-Si时，半导体层中掺杂了n+离子，而n+离子具有较大的导电率和较高的关断电流，在薄膜晶体管关闭后，部分电荷通过半导体层流失，造成像素区电压较低，形成亮点。或者，像素单元中的源极和漏极之间发生短路、源极和漏极之间形成开路、连接像素电极和薄膜晶体管的漏极的过孔不良导致像素电极与薄膜晶体管漏极无法正常导通等现象，都会造成亮点缺陷。
通常的修复方法是，将产生亮点缺陷的像素单元的像素电极和公共电极短接，使得该像素单元形成为暗点。
但是，如图1所示，像素电极200和公共电极300之间的重叠极少，难以在不影响正常显示的情况下将二者导电连接。
因此，如何容易地将产生亮点缺陷的像素单元的像素电极和公共电极导电连接成为本领域亟待解决的技术问题。
发明内容
本发明的目的在于提供一种阵列基板、该阵列基板的制造方法和包括所述阵列基板的显示装置。当所述阵列基板发生亮点缺陷时，可以容易地将发生亮点缺陷的显示像素单元的像素电极和公共电极短接。
为了实现上述目的，作为本发明的一个方面，提供一种像素单元，其中，所述像素单元包括薄膜晶体管、像素电极、第一绝缘层、第二绝缘层、公共电极和公共电极线，所述公共电极线与所述公共电极电连接，所述第一绝缘层设置在所述薄膜晶体管的漏极与所述像素电极之间，所述像素电极通过贯穿所述第一绝缘层的过孔与所述漏极电连接，所述第二绝缘层设置在所述像素电极与所述公共电极线之间，以将所述像素电极与所述公共电极线绝缘间隔，且所述第二绝缘层的一部分和所述公共电极线的一部分均位于所述过孔中。
可选地，所述公共电极与相应的所述公共电极线搭接。
可选地，所述像素单元还包括导电连接件，所述导电连接件贯穿所述公共电极线位于所述过孔中的部分、所述第二绝缘层位于所述过孔中的部分、所述像素电极位于所述过孔中的部分，以将所述公共电极线与所述漏极电连接。
可选地，所述第一绝缘层的材料包括醇酸树脂、丙烯酸树脂、聚乙烯、聚苯乙烯、聚酯树脂、聚酰胺树脂、酚醛树脂中的任意一者或者任意几者的组合，所述第二绝缘层的材料包括硅的氧化物和/或硅的氮化物。
作为本发明的第二个方面，提供一种阵列基板，所述阵列基板包括多个像素单元，其中，至少一个所述像素单元为本发明所提供的上述像素单元。
作为本发明的第三个方面，提供一种显示装置，所述显示装置包括阵列基板，其中，所述阵列基板为本发明所提供的上述阵列基板。
作为本发明的第四个方面，提供一种像素单元的制造方法，其中，所述制造方法包括：
提供衬底基板；
在所述衬底基板上形成薄膜晶体管；
形成第一绝缘层；
在第一绝缘层上与所述薄膜晶体管的漏极对应的位置形成过孔，所述过孔沿所述第一绝缘层的厚度方向贯穿所述第一绝缘层，并露出所述漏极的一部分表面；
形成像素电极，所述像素电极的一部分位于所述过孔中，以与所述漏极电连接；
形成第二绝缘层，所述第二绝缘层的一部分位于所述过孔中，且所述第二绝缘层覆盖所述像素电极；
形成公共电极线，所述公共电极线的一部分位于所述过孔中，且所述公共电极线与所述像素电极之间通过所述第二绝缘层绝缘间隔；
形成公共电极，所述公共电极与所述公共电极线电连接，以获得初始像素单元。
可选地，所述公共电极与相应的所述公共电极线搭接，所述公共电极的一部分也位于所述过孔中。
可选地，所述制造方法还包括：
对所述初始像素单元进行检测；
当所述初始像素单元发生亮点不良时，所述制造方法还包括：
在所述初始像素单元中形成导电连接件，以获得所述像素单元，所述导电连接件贯穿所述第二绝缘层和所述像素电极，以将所述初始像素单元公共电极线位于所述过孔内的部分与所述初始像素单元的漏极电连接。
可选地，在所述初始像素单元中形成导电连接件的步骤中，利用激光焊接的方式形成所述导电连接件
当像素单元出现亮点异常时，可以通过诸如激光焊接等方法将出现亮点异常的像素单元对应的公共电极线、像素电极以及薄膜晶体管的漏极电连接在一起。由于公共电极线通常由金属材料制成，因此，公共电极线具有相对较大的厚度，在焊接时，熔化的金属材料可以形成导电连接件，与同一像素单元中的像素电极以及漏极形成稳定的电连接。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1是现有的像素单元的的剖视示意图；
图2是本发明所提供的像素单元的剖视示意图；
图3是包括导电连接件的像素单元的示意图；
图4a至图4g是本发明所提供的像素单元的制造方法的流程图。
附图标记说明
100：薄膜晶体管 110：漏极
120：源极 130：有源层
140：栅极 200：像素电极
300：公共电极 400：公共电极线
500：第一绝缘层 600：第二绝缘层
700：导电连接件 800：衬底基板
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
作为本发明的一个方面，提供一种像素单元，如图2所示，所述像素单元包括薄膜晶体管100、像素电极200、第一绝缘层500、第二绝缘层600、公共电极和公共电极线400，该公共电极线400与公共电极电连接。第一绝缘层500设置在薄膜晶体管100的漏极110所在的层与所述像素电极层之间，像素电极200通过贯穿第一绝缘层500的过孔与漏极110电连接，第二绝缘层600设置在像素电极100与公共电极线400之间，以将像素电极200与公共电极线400绝缘间隔，且第二绝缘层600的一部分和公共电极线400的一部分位于所述过孔中。
所述像素单元应用于显示装置的阵列基板中，当所述像素单元出现亮点异常时，可以通过诸如激光焊接等方法将出现亮点异常的像素单元对应的公共电极线400、像素电极200以及薄膜晶体管的漏极110电连接在一起。由于公共电极线400通常由金属材料制成，因此，公共电极线400具有相对较大的厚度，并且，漏极110也由金属材料制成，焊接之前，过孔处的结构为“金属+透明电极+金属”的夹层结构，在焊接时，熔化的金属材料可以形成导电连接件700(如图3所示)，与像素单元中的像素电极200以及漏极210形成稳定的电连接。
在所述像素单元中，公共电极线400为相应的公共电极400提供公共电压信号，因此，当公共电极线400通过焊接的方式与像素电极200电连接后，可以向像素电极200提供公共电压信号，从而将发生亮点不良的像素单元形成为暗点，不再影响显示装置的正常显示。
当然，通过焊接的手段对出现亮点异常的像素单元进行暗点化时，也可以在过孔之外的区域进行焊接，将公共电极线400与像素电极电连接，只不过，这种情况中，由于像素电极厚度较小，焊接成功率稍低。
在本发明中，对公共电极线的具体材料并没有特殊的限制，例如，公共电极线可以由铜、铝、钼中的任意一者制成，也可以由至少任意两者的合金制成。
在本申请中，对薄膜晶体管100的具体结构并不做特殊的限定。该薄膜晶体管100可以是顶栅型薄膜晶体管，也可以是底栅型薄膜晶体管。在图2和图3中所示的具体实施方式中，薄膜晶体管100为底栅型薄膜晶体管。具体地，薄膜晶体管100包括栅极140、有源层130、源极120和漏极110。在栅极140和有源层130之间设置有栅极绝缘层。
通常，公共电极300与相应的公共电极线400搭接，例如，在图2中所示的实施方式中，公共电极300位于公共电极线400上方。为了便于向公共电极提供公共电极信号、并提高阵列基板的开口率，可选地，公共电极300与公共电极线400搭接，从而增加了公共电极200与公共电极线之间的接触面积，并且减少了公共电极线400向像素单元的开口区延伸的距离，在使得公共电极300与公共电极线400之间形成稳定的电连接同时，确保像素单元具有较大的开口率。
如上文中所述，由于公共电极线的一部分位于过孔中，因此，当所述像素单元发生亮点异常时，可以通过将过孔内的公共电极线、像素电极、以及漏极焊接在一起，从而对该像素单元进行暗点化。当阵列基板中，修复后的像素单元的数量在允许范围内时，仍然可以将该阵列基板当作良品。图2中所示的是未经修复的像素单元的一部分，图3中所示的是修复后的像素单元的一部分。如图中所示，修复后的所述像素单元中设置有导电连接件700，该导电连接件700贯穿公共电极线400位于所述过孔中的部分、第二绝缘层600位于所述过孔中的部分、像素电极200位于所述过孔中的部分，以将公共电极线400与所述异常像素单元中的薄膜晶体管100的漏极110电连接。
如上文中所述，由于公共电极线400和漏极110均为金属材料且具有较厚的厚度，因此，可以形成具有合适尺寸的导电连接件700，以形成稳定的电连接。
在本发明中，对第一绝缘层500和第二绝缘层600的具体材料并没有特殊的限制，作为本发明的一个方面，第一绝缘层500可以为像素单元的平坦化层，第一绝缘层500的材料包括醇酸树脂、丙烯酸树脂、聚乙烯、聚苯乙烯、聚酯树脂、聚酰胺树脂、酚醛树脂中的任意一者或者任意几者的组合。第二绝缘层600可以为像素单元的钝化层，第二绝缘层600的材料包括硅的氧化物(即，SiOx)和/或硅的氮化物(SiNy)。由于第一绝缘层500由有机物制成，从而可以减少阵列基板的寄生电容。利用钝化层做第二绝缘层600可以对像素电极200进行较好的保护。除此之外，由于公共电极线400与像素电极200之间仅包括无机物制成的第二绝缘层，而不包括有机物制成的第一绝缘层，因此，在修复亮点缺陷时，公共电极线400与像素电极200之间能够顺利地进行焊接。
作为本发明的第二个方面，提供一种阵列基板，所述阵列基板包括多个像素单元，其中，至少一个像素单元为本发明所提供的上述像素单元。
在制成包括所述像素单元的阵列基板后，对阵列基板进行检测，当像素单元存在亮点异常时，可以在存在亮点异常的像素单元的过孔处进行焊接，以形成连接件，将发生亮点异常的像素单元暗点化。
在一种实施方式中，阵列基板所有的像素单元均为本发明所提供的上述单元。
需要指出的是，所有像素单元的第一绝缘层形成为一体，所有像素单元的第二绝缘层形成为一体。
作为一种实施方式，同一行中的各个像素单元的公共电极线形成为一体。
作为本发明的第三个方面，提供一种显示装置，所述显示装置包括阵列基板，其中，所述阵列基板为本发明所提供的上述阵列基板。
当检测过程中发现阵列基板中存在产生亮点缺陷的异常像素单元时，可以将相应的像素单元中的像素电极与公共电极短接，形成暗点。如上文中所述，由于公共电极线的一部分位于过孔中，因此，在利用焊接的方式形成将像素电极与公共电极短接的导电连接件时，熔融的金属材料足够多，因此，可以形成可靠的电连接。
在本发明中，对显示装置的具体类型并不做特殊的要求。例如，所述显示装置可以是显示面板、手机、电脑、平板电脑、电子纸、GPS导航仪等电子设备。
作为本发明的第四个方面，提供上述像素单元的制造方法，其中，所述制造方法包括：
在步骤S100中，提供衬底基板800(如图4a所示)；
在步骤S200中，在衬底基板上800形成薄膜晶体管层100，如图4b所示；
在步骤S300中，形成第一绝缘层500(如图4c所示)；
在步骤S400中，在第一绝缘层500上与薄膜晶体管100的漏极110对应的位置形成过孔A，如图4d所示，该过孔A沿第一绝缘层500的厚度方向贯穿该第一绝缘层500，并露出漏极100的一部分表面；
在步骤S500中，形成像素电极200，如图4e所示，该像素电极200的一部分位于所述过孔中，以与漏极110电连接；
在步骤S600中，形成第二绝缘层600，如图4f所示，第二绝缘层600的一部分也位于所述过孔中，且第二绝缘层覆盖像素电极200；
在步骤S700中，形成公共电极线400，如图4g所示，该公共电极线400的一部分位于所述过孔中，且公共电极线400与像素电极200之间通过第二绝缘层600绝缘间隔；
在步骤S800中，形成公共电极300，如图2所示，该公共电极300与相应的公共电极线电连接，以获得初始像素单元。
在本发明中，对如何形成过孔A并没有特殊的规定。由于第一绝缘层可以是有机绝缘层，因此，可以利用光刻工艺形成所述过孔A。即，将掩膜板设置在第一绝缘层的上方，利用光照对第一绝缘层进行曝光，然后对曝光后的第一绝缘层进行显影，从而可以获得过孔A。
同样地，对如何形成公共电极线也没有特殊的要求。可以通过溅射工艺在第二绝缘层上方形成一层金属层，然后利用光刻构图工艺形成包括公共电极线的图形。
如上文中所述，薄膜晶体管100包括栅极140、有源层130、源极120和漏极110，可以按照构图工艺形成薄膜晶体管。例如，可以按照如下方法形成图4b中的底栅型的薄膜晶体管：
在衬底基板800上形成包括栅极140的图形；
在形成有包括栅极的图形的衬底基板上形成栅极绝缘层；
在栅极绝缘层上形成包括有源层130的图形；
在形成有有源层130的衬底基板上形成包括源极120和漏极110的图形。
在图4c中所示的具体实施方式中，薄膜晶体管100的上方还形成有缓冲层，用于对薄膜晶体管的源极和漏极进行保护。为了露出漏极110的上表面，过孔A也需要贯穿所述缓冲层。
需要解释的是，初始像素单元可以是最终的产品。即，所述初始像素单元即为所述像素单元。
也可以对所述初始像素单元进行进一步的处理，获得所述像素单元。
在本发明中，对形成公共电极的步骤和形成公共电极线的步骤的先后顺序并没有特殊的要求。例如，在本发明所提供的具体实施方式中，先形成包括公共电极线的图形，再形成包括公共电极的图形。如图2所示，公共电极300与相应的公共电极线400搭接。
所述第一绝缘层的材料包括醇酸树脂、丙烯酸树脂、聚乙烯、聚苯乙烯、聚酯树脂、聚酰胺树脂、酚醛树脂中的任意一者或者任意几者的组合，所述第二绝缘层的材料包括硅的氧化物和/或硅的氮化物。
如上文中所述，由于公共电极线的一部分位于过孔中，使得该像素单元易于暗点化。相应地，所述制造方法还包括：
对所述初始像素单元进行检测；
当所述初始像素单元发生亮点不良时，所述制造方法还包括：
在所述初始像素单元中形成导电连接件，以获得所述像素单元，所述导电连接件贯穿所述第二绝缘层和所述像素电极，以将所述初始像素单元公共电极线位于所述过孔内的部分与所述初始像素单元的漏极电连接。
将发生亮点不良的初始像素单元内的公共电极线与漏极电连接后，可以将该初始像素单元暗点化，从而不影响显示装置的正常显示。
在本发明中，对如何形成导电连接件并没有特殊的要求，可选地，在所述初始像素单元中形成导电连接件的步骤中，利用激光焊接的方式形成所述导电连接件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种像素单元，其特征在于，所述像素单元包括薄膜晶体管、像素电极、第一绝缘层、第二绝缘层、公共电极和公共电极线，所述公共电极线与所述公共电极电连接，所述第一绝缘层设置在所述薄膜晶体管的漏极与所述像素电极之间，所述像素电极通过贯穿所述第一绝缘层的过孔与所述漏极电连接，所述第二绝缘层设置在所述像素电极与所述公共电极线之间，以将所述像素电极与所述公共电极线绝缘间隔，且所述第二绝缘层的一部分和所述公共电极线的一部分均位于所述过孔中。
2.根据权利要求1所述的像素单元，其特征在于，所述公共电极与相应的所述公共电极线搭接。
3.根据权利要求1所述的像素单元，其特征在于，所述像素单元还包括导电连接件，所述导电连接件贯穿所述公共电极线位于所述过孔中的部分、所述第二绝缘层位于所述过孔中的部分、所述像素电极位于所述过孔中的部分，以将所述公共电极线与所述漏极电连接。
4.根据权利要求1至3中任意一项所述的像素单元，其特征在于，所述第一绝缘层的材料包括醇酸树脂、丙烯酸树脂、聚乙烯、聚苯乙烯、聚酯树脂、聚酰胺树脂、酚醛树脂中的任意一者或者任意几者的组合，所述第二绝缘层的材料包括硅的氧化物和/或硅的氮化物。
5.一种阵列基板，所述阵列基板包括多个像素单元，其特征在于，至少一个所述像素单元为权利要求1至4中任意一项所述的像素单元。
6.一种显示装置，所述显示装置包括阵列基板，其特征在于，所述阵列基板为权利要求5所述的阵列基板。
7.一种像素单元的制造方法，其特征在于，所述制造方法包括：
提供衬底基板；
在所述衬底基板上形成薄膜晶体管；
形成第一绝缘层；
在第一绝缘层上与所述薄膜晶体管的漏极对应的位置形成过孔，所述过孔沿所述第一绝缘层的厚度方向贯穿所述第一绝缘层，并露出所述漏极的一部分表面；
形成像素电极，所述像素电极的一部分位于所述过孔中，以与所述漏极电连接；
形成第二绝缘层，所述第二绝缘层的一部分位于所述过孔中，且所述第二绝缘层覆盖所述像素电极；
形成公共电极线，所述公共电极线的一部分位于所述过孔中，且所述公共电极线与所述像素电极之间通过所述第二绝缘层绝缘间隔；
形成公共电极，所述公共电极与所述公共电极线电连接，以获得初始像素单元。
8.根据权利要求7所述的制造方法，其特征在于，所述公共电极与相应的所述公共电极线搭接，所述公共电极的一部分也位于所述过孔中。
9.根据权利要求7或8所述的制造方法，其特征在于，所述制造方法还包括：
对所述初始像素单元进行检测；
当所述初始像素单元发生亮点不良时，所述制造方法还包括：
在所述初始像素单元中形成导电连接件，以获得所述像素单元，所述导电连接件贯穿所述第二绝缘层和所述像素电极，以将所述初始像素单元公共电极线位于所述过孔内的部分与所述初始像素单元的漏极电连接。
10.根据权利要求9所述的制造方法，其特征在于，在所述初始像素单元中形成导电连接件的步骤中，利用激光焊接的方式形成所述导电连接件。
CN201710180474.2A 2017-03-23 2017-03-23 像素单元及其制造方法、阵列基板和显示装置 Active CN108628046B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201710180474.2A CN108628046B (zh) 2017-03-23 2017-03-23 像素单元及其制造方法、阵列基板和显示装置
US15/767,515 US20190057977A1 (en) 2017-03-23 2017-10-25 Pixel unit, fabrication method thereof, array substrate, and display device
PCT/CN2017/107628 WO2018171190A1 (en) 2017-03-23 2017-10-25 Pixel unit, fabrication method thereof, array substrate, and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710180474.2A CN108628046B (zh) 2017-03-23 2017-03-23 像素单元及其制造方法、阵列基板和显示装置

Publications (2)

Publication Number Publication Date
CN108628046A true CN108628046A (zh) 2018-10-09
CN108628046B CN108628046B (zh) 2021-04-27

Family

ID=63584028

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710180474.2A Active CN108628046B (zh) 2017-03-23 2017-03-23 像素单元及其制造方法、阵列基板和显示装置

Country Status (3)

Country Link
US (1) US20190057977A1 (zh)
CN (1) CN108628046B (zh)
WO (1) WO2018171190A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110133927A (zh) * 2019-04-30 2019-08-16 深圳市华星光电半导体显示技术有限公司 显示面板及其修复方法
WO2020140366A1 (en) * 2019-01-04 2020-07-09 Boe Technology Group Co., Ltd. Array substrate and manufacturing method thereof, display panel and display apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110609425B (zh) * 2019-09-29 2022-08-12 成都中电熊猫显示科技有限公司 阵列基板、面板、修补方法及显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103474432A (zh) * 2013-08-28 2013-12-25 合肥京东方光电科技有限公司 一种阵列基板及其制备方法和显示装置
US20150153598A1 (en) * 2013-12-02 2015-06-04 Panasonic Liquid Crystal Display Co., Ltd. Liquid crystal display device, manufacturing method therefor, and defective pixel correction method therefor
CN104813386A (zh) * 2012-11-30 2015-07-29 夏普株式会社 Tft基板
CN104882453A (zh) * 2015-06-11 2015-09-02 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871501B2 (en) * 2008-02-01 2014-10-28 Rick Claypool Panelized drum system
US20010001937A1 (en) * 1998-07-29 2001-05-31 David Benes Die retention pallet for material cutting devices
CN100580509C (zh) * 2006-03-10 2010-01-13 瀚宇彩晶股份有限公司 液晶显示器及用于该显示器的缺陷修补方法
JP5179337B2 (ja) * 2008-12-18 2013-04-10 パナソニック液晶ディスプレイ株式会社 液晶表示装置及びその点欠陥修正方法
US20130004885A1 (en) * 2011-06-29 2013-01-03 Dusan Strmcnik Fuel cell electrodes
KR20150008652A (ko) * 2013-07-15 2015-01-23 삼성전기주식회사 연자성 복합 물질, 이의 제조방법, 및 이를 코어재료로 포함하는 전자 부품
CN104536166B (zh) * 2014-12-18 2017-09-01 深圳市华星光电技术有限公司 铜互连coa型液晶面板暗点修复方法及铜互连coa型液晶面板结构
CN105487315A (zh) * 2016-01-19 2016-04-13 武汉华星光电技术有限公司 Tft阵列基板
CN105974705B (zh) * 2016-07-25 2020-04-07 京东方科技集团股份有限公司 阵列基板、其制作方法、修复方法、显示面板及显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104813386A (zh) * 2012-11-30 2015-07-29 夏普株式会社 Tft基板
CN103474432A (zh) * 2013-08-28 2013-12-25 合肥京东方光电科技有限公司 一种阵列基板及其制备方法和显示装置
US20150153598A1 (en) * 2013-12-02 2015-06-04 Panasonic Liquid Crystal Display Co., Ltd. Liquid crystal display device, manufacturing method therefor, and defective pixel correction method therefor
CN104882453A (zh) * 2015-06-11 2015-09-02 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020140366A1 (en) * 2019-01-04 2020-07-09 Boe Technology Group Co., Ltd. Array substrate and manufacturing method thereof, display panel and display apparatus
US11506948B2 (en) 2019-01-04 2022-11-22 Chongqing Boe Optoelectronics Technology Co., Ltd. Array substrate and manufacturing method thereof, display panel and display apparatus
CN110133927A (zh) * 2019-04-30 2019-08-16 深圳市华星光电半导体显示技术有限公司 显示面板及其修复方法

Also Published As

Publication number Publication date
WO2018171190A1 (en) 2018-09-27
US20190057977A1 (en) 2019-02-21
CN108628046B (zh) 2021-04-27

Similar Documents

Publication Publication Date Title
TWI285930B (en) Display apparatus
KR20150061772A (ko) 표시장치용 표시패널
JP2002055361A (ja) 液晶表示装置及びその欠陥修正方法
US10838273B2 (en) Array substrate, repair method thereof, and display device
JP2009080279A (ja) 液晶表示装置
WO2013155830A1 (zh) 阵列基板的制造方法、阵列基板及显示装置
CN110729313A (zh) 显示面板、显示面板制备方法、显示装置
CN102495502B (zh) 液晶显示装置及其像素修补方法
CN105810695B (zh) 阵列基板及显示装置
CN101587272A (zh) 液晶显示器件及其制造方法
CN105867692B (zh) 阵列基板、制造方法以及显示面板和电子装置
TW200305742A (en) Array substrate and its manufacturing
CN104932161A (zh) 阵列基板及其制作方法、修复方法、显示装置
CN102654703A (zh) 一种阵列基板及其制造方法、以及显示设备
CN108628046A (zh) 像素单元及其制造方法、阵列基板和显示装置
CN106783889A (zh) 显示基板及其制备方法、显示装置
CN210723028U (zh) 显示面板、显示装置
CN109061914A (zh) 显示基板的制造方法、显示基板、显示装置
CN107112367A (zh) 薄膜晶体管基板、薄膜晶体管基板的制造方法、液晶显示装置
CN113725157B (zh) 阵列基板及其制作方法
CN202917490U (zh) 阵列基板和显示装置
TW200905300A (en) Pixel structures, methods of forming the same and multi domain vertical alignment LCDs
JP2007114773A (ja) アレイ基板及びこれの製造方法
CN106098709B (zh) 阵列基板、显示装置
CN103972243B (zh) 一种阵列基板及其制作方法、显示装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant