CN108622851A - A kind of preparation method of the substrate with cavity - Google Patents
A kind of preparation method of the substrate with cavity Download PDFInfo
- Publication number
- CN108622851A CN108622851A CN201810403390.5A CN201810403390A CN108622851A CN 108622851 A CN108622851 A CN 108622851A CN 201810403390 A CN201810403390 A CN 201810403390A CN 108622851 A CN108622851 A CN 108622851A
- Authority
- CN
- China
- Prior art keywords
- substrate
- cavity
- preparation
- support substrate
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
- B81C1/00063—Trenches
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Weting (AREA)
Abstract
The present invention provides a kind of preparation methods of the substrate with cavity, belong to semiconductor substrate technical field.The preparation method of the substrate with cavity includes the following steps：Multiple grooves and multiple air slots are formed on the surface of support substrate first, then the support substrate and device substrate bonding are pasted together under vacuum conditions, grind the device substrate to appointed thickness.The substrate with cavity of the present invention increases air slot, can make pressure adaptive external environment in cavity, and the device layer non-uniform film thickness for reducing cavity top and the deformation under different process environment ensure the uniformity and planarization of surface device tunic.
Description
Technical field
The present invention relates to semiconductor substrate technical field, more particularly to a kind of preparation method of the substrate with cavity.
Background technology
SOI materials with cavity（Cavity-SOI）As a kind of novel SOI materials, with common SOI materials
Material is compared, and supporter has outputed specific cavity before bonding by photoetching and etching technics, and these cavitys are in surface shape
It is distributed at specific figure.It is more next on the MEMS products such as micro mirror, gyroscope, accelerometer with the development of MEMS technologies
More applies cavity SOI materials.
It is existing prepare cavity SOI materials during, due to bonding when generally use vacuum environment, lead to cavity
Interior is also vacuum.In the process procedures such as subsequent thinned, photoetching, etching, some are atmospheric pressure environments, some are vacuum environments, from
And it will appear several adverse consequences：1, cavity surface device layer film thickness is uneven after being thinned（Center is thick, thin edge）；2, in different pressures
In the case of power processing, there is different deformation in surface device tunic, to bringing uncertain difficulty in technique；3, surface device
Tunic to recessed, damages small structure in cavity by pressure under atmospheric pressure environment.
Invention content
The purpose of the present invention is to provide a kind of preparation methods of the substrate with cavity, to solve existing cavity surface
Uneven, yielding in the processing problem of device tunic.
In order to solve the above technical problems, the present invention provides a kind of preparation method of the substrate with cavity, including walk as follows
Suddenly：
Multiple grooves and multiple air slots are formed on the surface of support substrate；
The support substrate and device substrate bonding are pasted together under vacuum conditions；
The device substrate is ground to appointed thickness.
Optionally, after the surface of support substrate forms multiple grooves and multiple air slots, the lining with cavity
The preparation method at bottom further includes：Groove and the surface of air slot or the surface shape of device substrate are formed in the support substrate
At oxide layer.
Optionally, the support substrate and device substrate bonding carry out annealing reinforcing after pasting.
Optionally, the support substrate and the device substrate are the semi-conducting material including monocrystalline silicon and SOI pieces.
Optionally, the support substrate and the device substrate have different resistivity.
Optionally, the groove and the air slot are formed by photoetching or dry etching or wet etching.
Optionally, the width of the air slot is 5 ~ 500um.
Optionally, the material of the oxide layer is aluminium-germanium or gold.
A kind of preparation method of the substrate with cavity is provided in the present invention, is formed first on the surface of support substrate
The support substrate and device substrate bonding are pasted together, grind by multiple grooves and multiple air slots under vacuum conditions
The device substrate is to appointed thickness.The substrate with cavity of the present invention increases air slot, can make in cavity pressure oneself
External environment is adapted to, the device layer non-uniform film thickness for reducing cavity top and the deformation under different process environment ensure surface
The uniformity and planarization of device tunic.
Description of the drawings
Fig. 1 is the step schematic diagram of the preparation method of the substrate provided by the invention with cavity；
Fig. 2 ~ Fig. 6 is the flow diagram for preparing the substrate with cavity.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to a kind of preparation method work of the substrate with cavity proposed by the present invention
It is further described.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted
That attached drawing is all made of very simplified form and uses non-accurate ratio, only to it is convenient, lucidly aid in illustrating this hair
The purpose of bright embodiment.
Embodiment one
The present invention provides a kind of preparation method of the substrate with cavity, specific steps schematic diagram is as shown in Figure 1.It is described to carry
The preparation method of the substrate of cavity includes the following steps：
Step S11：Multiple grooves and multiple air slots are formed on the surface of support substrate；
Step S12：The support substrate and device substrate bonding are pasted together under vacuum conditions；
Step S13：The device substrate is ground to appointed thickness.
Specifically, being illustrated in figure 2 support substrate 1 and device substrate 2, the support substrate 1 and the device substrate 2 are
Semi-conducting material including monocrystalline silicon and SOI pieces, and the support substrate 1 and the device substrate 2 are with different
Resistivity.Multiple grooves are formed by photoetching or dry etching or wet etching on the surface of support substrate 1 first and multiple are led
Air drain 11, as shown in Figure 3.Further, the width of the air slot 11 is 5 ~ 500um.Then referring to Fig. 4, in the branch
The surface formation oxide layer 12 that groove and air slot are formed on substrate 1 is supportted, the material of the oxide layer 12 is aluminium-germanium or gold.If
It is not intended to form oxide layer 12 in groove and air slot, oxide layer 12 can also be grown in the surface of device substrate 2.Specifically
, the method for forming the oxide layer 12 is chemical vapor deposition method.The case where material for support substrate 1 is monocrystalline silicon
Under, oxide layer 12 can also be the silica formed using thermal oxidation technology.Then under vacuum conditions by the support substrate 1
It is pasted together with the bonding of the device substrate 2, such as Fig. 5, and annealing reinforcing is carried out after bonding is pasted.After the completion of bonding, by
In there is air slot 11 to be communicated with the external world, air pressure inside changes with ambient pressure.Finally, the device substrate 2 is ground to specified
Thickness, as shown in Figure 6.The substrate with cavity of the present invention increases air slot, can make in cavity outside pressure adaptive
Environment, the device layer non-uniform film thickness for reducing cavity top and the deformation under different process environment, ensure surface device tunic
Uniformity and planarization.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (8)
1. a kind of preparation method of the substrate with cavity, which is characterized in that include the following steps：
Multiple grooves and multiple air slots are formed on the surface of support substrate；
The support substrate and device substrate bonding are pasted together under vacuum conditions；
The device substrate is ground to appointed thickness.
2. the preparation method of the substrate with cavity as described in claim 1, which is characterized in that in the surface shape of support substrate
After multiple grooves and multiple air slots, the preparation method of the substrate with cavity further includes：In the support substrate
The upper surface for forming groove and air slot or the surface of device substrate form oxide layer.
3. the preparation method of the substrate with cavity as described in claim 1, which is characterized in that the support substrate and described
Device substrate bonding carries out annealing reinforcing after pasting.
4. the preparation method of the substrate as described in any one of claims 1-3 with cavity, which is characterized in that the support substrate
It is the semi-conducting material including monocrystalline silicon and SOI pieces with the device substrate.
5. the preparation method of the substrate with cavity as claimed in claim 4, which is characterized in that the support substrate and described
Device substrate has different resistivity.
6. the preparation method of the substrate with cavity as described in claim 1, which is characterized in that the groove and the air guide
Slot is formed by photoetching or dry etching or wet etching.
7. the preparation method of the substrate with cavity as claimed in claim 6, which is characterized in that the width of the air slot is
5~500um。
8. the preparation method of the substrate with cavity as claimed in claim 2, which is characterized in that the material of the oxide layer is
Aluminium-germanium or gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810403390.5A CN108622851A (en) | 2018-04-28 | 2018-04-28 | A kind of preparation method of the substrate with cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810403390.5A CN108622851A (en) | 2018-04-28 | 2018-04-28 | A kind of preparation method of the substrate with cavity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108622851A true CN108622851A (en) | 2018-10-09 |
Family
ID=63695058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810403390.5A Pending CN108622851A (en) | 2018-04-28 | 2018-04-28 | A kind of preparation method of the substrate with cavity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108622851A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115424943A (en) * | 2022-11-04 | 2022-12-02 | 绍兴中芯集成电路制造股份有限公司 | Method for forming cavities with different vacuum degrees |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1692488A (en) * | 2002-10-22 | 2005-11-02 | 三菱住友硅晶株式会社 | Pasted soi substrate, process for producing the same and semiconductor device |
| CN1751232A (en) * | 2003-03-10 | 2006-03-22 | 丹佛斯公司 | Silicon pressure sensor with decreased pressure equalization between measured pressure and reference chamber |
| CN102285632A (en) * | 2010-06-18 | 2011-12-21 | 通用电气公司 | A sensor and method for fabricating the same |
| WO2013006167A1 (en) * | 2011-07-06 | 2013-01-10 | Foster Ron B | Sensor die |
| CN103241708A (en) * | 2013-05-14 | 2013-08-14 | 上海新傲科技股份有限公司 | Preparation method of substrate with cavity |
| CN103241702A (en) * | 2012-02-09 | 2013-08-14 | 精工爱普生株式会社 | Electronic device, method for manufacturing thereof, and electronic apparatus |
| CN103258778A (en) * | 2013-05-14 | 2013-08-21 | 上海新傲科技股份有限公司 | Method for preparing substrate with hollow cavity |
-
2018
- 2018-04-28 CN CN201810403390.5A patent/CN108622851A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1692488A (en) * | 2002-10-22 | 2005-11-02 | 三菱住友硅晶株式会社 | Pasted soi substrate, process for producing the same and semiconductor device |
| CN1751232A (en) * | 2003-03-10 | 2006-03-22 | 丹佛斯公司 | Silicon pressure sensor with decreased pressure equalization between measured pressure and reference chamber |
| CN102285632A (en) * | 2010-06-18 | 2011-12-21 | 通用电气公司 | A sensor and method for fabricating the same |
| WO2013006167A1 (en) * | 2011-07-06 | 2013-01-10 | Foster Ron B | Sensor die |
| CN103241702A (en) * | 2012-02-09 | 2013-08-14 | 精工爱普生株式会社 | Electronic device, method for manufacturing thereof, and electronic apparatus |
| CN103241708A (en) * | 2013-05-14 | 2013-08-14 | 上海新傲科技股份有限公司 | Preparation method of substrate with cavity |
| CN103258778A (en) * | 2013-05-14 | 2013-08-21 | 上海新傲科技股份有限公司 | Method for preparing substrate with hollow cavity |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115424943A (en) * | 2022-11-04 | 2022-12-02 | 绍兴中芯集成电路制造股份有限公司 | Method for forming cavities with different vacuum degrees |
| CN115424943B (en) * | 2022-11-04 | 2023-02-10 | 绍兴中芯集成电路制造股份有限公司 | Method for forming cavities with different vacuum degrees |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5096556B2 (en) | Substrate thinning method | |
| US9482863B2 (en) | Production of micro-mechanical devices | |
| US8637953B2 (en) | Wafer scale membrane for three-dimensional integrated circuit device fabrication | |
| JP5890904B2 (en) | Method for producing mechanically flexible silicon substrate | |
| JP2008078430A (en) | Method of manufacturing electronic component | |
| CN103258778B (en) | With the preparation method of the substrate of cavity | |
| CN109585310B (en) | Semiconductor structure and forming method thereof | |
| CN108231646A (en) | A kind of manufacturing method of semiconductor devices | |
| CN108622851A (en) | A kind of preparation method of the substrate with cavity | |
| CN108242393A (en) | A kind of manufacturing method of semiconductor devices | |
| US20150291414A1 (en) | Mems device having conductive microstructures laterally surrounded by oxide material | |
| JP2012515447A (en) | Inspection method for supporting substrate of semiconductor-on-insulator type substrate | |
| TW202040845A (en) | Process for transferring a superficial layer to cavities | |
| WO2016173268A1 (en) | Method for forming cavity of sensor chip, method for manufacturing sensor chip, chip and electronic device | |
| US9824912B2 (en) | Method of transforming an electronic device | |
| US10825719B2 (en) | Methods of fabricating silicon-on-insulator (SOI) semiconductor devices using blanket fusion bonding | |
| US20110250733A1 (en) | Thinning method and silicon wafer based structure | |
| CN209721578U (en) | A kind of piezoresistive double-shaft motion sensor | |
| CN108609577A (en) | A kind of production method of MEMS device | |
| CN105280541A (en) | Temporary bonding method and bonding-removing method for ultrathin semiconductor wafer | |
| JP3160966B2 (en) | Method for manufacturing SOI substrate | |
| CN113924643A (en) | Ultrathin integrated chip and manufacturing method thereof | |
| JPH0555358A (en) | Manufacture of semiconductor device | |
| KR0119275B1 (en) | Substrate fabrication method with soi structure using dielectric wafer bonding | |
| TWI320944B (en) | Method for fabricating flow channel capable of balancing air pressure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 214000 Jiangsu city of Wuxi province DiCui Binhu District Liyuan Development Zone, Road No. 100 building 9 layer 2 Applicant after: ZHONGKEXIN INTEGRATED CIRCUIT Co.,Ltd. Address before: 214000 Jiangsu city of Wuxi province DiCui Binhu District Liyuan Development Zone, Road No. 100 building 9 layer 2 Applicant before: CHINA KEY SYSTEM & INTEGRATED CIRCUIT Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200513 Address after: 214000 No.19, Erquan East Road, Xishan District, Wuxi City, Jiangsu Province Applicant after: Wuxi micro vision sensor technology Co.,Ltd. Address before: 214000 Jiangsu city of Wuxi province DiCui Binhu District Liyuan Development Zone, Road No. 100 building 9 layer 2 Applicant before: ZHONGKEXIN INTEGRATED CIRCUIT Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181009 |
|
| RJ01 | Rejection of invention patent application after publication |