CN108609577A - A kind of production method of MEMS device - Google Patents
A kind of production method of MEMS device Download PDFInfo
- Publication number
- CN108609577A CN108609577A CN201611140082.5A CN201611140082A CN108609577A CN 108609577 A CN108609577 A CN 108609577A CN 201611140082 A CN201611140082 A CN 201611140082A CN 108609577 A CN108609577 A CN 108609577A
- Authority
- CN
- China
- Prior art keywords
- mems wafer
- mems
- adhesive tape
- wafer
- back side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00825—Protect against mechanical threats, e.g. against shocks, or residues
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
Abstract
The present invention provides a kind of production method of MEMS device, the method includes:MEMS wafer is provided, the front of the MEMS wafer is formed with patterned filter layer；Opening is formed in the MEMS wafer, the opening is through the back side of the MEMS wafer；Adhesive tape is formed on the patterned filter layer；MEMS wafer described in thinning back side from the MEMS wafer makes the MEMS wafer be thinned to target thickness；Remove the adhesive tape.According to the production method of MEMS device provided by the invention, the opening through the back side of the MEMS wafer is formed first in MEMS wafer, then the MEMS wafer front is kept using adhesive tape, MEMS wafer described in thinning back side from the MEMS wafer, the MEMS wafer is set to be thinned to target thickness, so as to avoid the technique being bonded is needed temporarily, to realize that low cost, high yield make ultra-thin MEMS device.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of production method of MEMS device.
Background technology
In consumer electronics field, multifunctional equipment is increasingly liked by consumer, compared to the simple equipment of function,
Multifunctional equipment manufacturing process will be more complicated, for example need to integrate the chip of multiple and different functions in circuit version, thus go out
3D integrated circuits (integrated circuit, IC) technology is showed.Wherein, microelectromechanical systems (Micro-
Electromechanical System, MEMS) volume, power consumption, weight and in price have fairly obvious advantage,
So far developed a variety of different sensors, for example, pressure sensor, acceleration transducer, inertial sensor and other
Sensor.
With computer, communication, the development of automotive electronics, aerospace industry and other consumer products, MEMS is sealed
More stringent requirements are proposed for dress, i.e. smaller, thinner and lighter.To meet the miniature requirement of these products, semi-conductor industry needs
Device wafers are thinned to 100 μm hereinafter, by vertical mutually with silicon hole (Through Silicon Via, TSV) between thin wafer
High density 3D stacked packages are even realized, to break through Moore's Law.Due to ultra-thin wafers have flexibility, fragility, easy warpage and
The features such as fluctuating, currently, ultra-thin wafers processing mostly uses interim bonding technology.The interim bonding technology of wafer is usually first by device
Wafer is bonded to intermediate materials on thicker carrier, and back side processing, including thinned, TSV processing and metallization are carried out to wafer.
After completing back procedure of processing, then inputting outside energy (light, electricity, heat and external force) makes adhesive layer fail, later by device wafers
It is separated from carrier, continues processing until encapsulation.
But due to high, the complex process that is bonded process costs temporarily, and crystal round fringes breakage etc. easily occurs no in processing procedure
It is good, influence product yield.Therefore, it is necessary to propose a kind of production method of MEMS device, to solve the above problems, MEMS is reduced
The production cost of device, and improve product yield.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of production method of semiconductor devices, including：
MEMS wafer is provided, the front of the MEMS wafer is formed with patterned filter layer；
Opening is formed in the MEMS wafer, the opening is through the back side of the MEMS wafer；
Adhesive tape is formed on the patterned filter layer；
MEMS wafer described in thinning back side from the MEMS wafer makes the MEMS wafer be thinned to target thickness；
Remove the adhesive tape.
Further, the method for forming the opening includes deep reaction ion etching.
Further, the method for the thinning back side includes being ground to the central area of the MEMS wafer, so that institute
The central area for stating MEMS wafer is thinned, and forms support ring outstanding in the fringe region of the MEMS wafer.
Further, the target thickness is less than or equal to 100 microns.
Further, further include executing another back side to the MEMS wafer to subtract before forming opening in the MEMS wafer
Thin step makes the MEMS wafer be thinned to another target thickness.
Further, another target thickness is 400 microns -500 microns.
Further, it further includes the steps that the removal support ring to remove the adhesive tape later.
Further, it is also formed with etching stop layer between the MEMS wafer and filter layer.
Further, the etching stop layer includes oxide skin(coating).
Further, further include the step for the etching stop layer that the removal opening is exposed after removing the adhesive tape
Suddenly.
Further, the method for removing the etching stop layer includes etching the etching using buffered oxide etch agent to stop
Only layer.
Further, the filter layer includes silicon nitride layer.
Further, the patterned filter layer includes filter opening.
Further, the adhesive tape includes UV adhesive tapes or heat sensitive adhesive tape.
According to the production method of MEMS device provided by the invention, formed first in MEMS wafer brilliant through the MEMS
Then the opening at the round back side keeps the MEMS wafer front using adhesive tape, subtracts from the back side of the MEMS wafer
The thin MEMS wafer, makes the MEMS wafer be thinned to target thickness, so as to avoid the technique being bonded is needed temporarily, to
Realize that low cost, high yield make ultra-thin MEMS device.
According to the production method of MEMS device provided by the invention, it is brilliant that the MEMS is fixed using UV adhesive tapes or heat sensitive adhesive tape
Circle will not cause to damage in follow-up stripping since viscosity is low to the pattern of wafer frontside；The etching stop layer includes oxidation
Nitride layer etches the etching stopping layer that the opening is exposed using buffered oxide etch agent, can be carried out at batch, in turn
Improve output.
Description of the drawings
The embodiment of the present invention is described in more detail in conjunction with the accompanying drawings, the above and other purposes of the present invention,
Feature and advantage will be apparent.Attached drawing is used for providing further understanding the embodiment of the present invention, and constitutes explanation
A part for book is not construed as limiting the invention for explaining the present invention together with the embodiment of the present invention.In the accompanying drawings,
Identical reference label typically represents same parts or step.
In attached drawing：
Figure 1A -1E are the schematic cross sectional views of the device obtained respectively the step of implementation successively according to the prior art.
Fig. 2A -2G are the devices that the step of method according to an exemplary embodiment of the present invention is implemented successively obtains respectively
Schematic cross sectional view.
Fig. 3 is a kind of schematic flow chart of the manufacturing method of semiconductor devices according to an exemplary embodiment of the present invention.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the areas Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then element or layer between two parties is not present.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relationship term intention further includes making
With the different orientation with the device in operation.For example, if the device in attached drawing is overturn, then, it is described as " under other elements
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related Listed Items and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution proposed by the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however in addition to these detailed descriptions
Outside, the present invention can also have other embodiment.
With computer, communication, the development of automotive electronics, aerospace industry and other consumer products, MEMS is sealed
More stringent requirements are proposed for dress, i.e. smaller, thinner and lighter.To meet the miniature requirement of these products, semi-conductor industry needs
Device wafers are thinned to 100 μm hereinafter, by vertical mutually with silicon hole (Through Silicon Via, TSV) between thin wafer
High density 3D stacked packages are even realized, to break through Moore's Law.Due to ultra-thin wafers have flexibility, fragility, easy warpage and
The features such as fluctuating, currently, ultra-thin wafers processing mostly uses interim bonding technology.It is to use in the prior art as shown in Figure 1A -1E
The method of interim bonding technology processing ultra-thin wafers.First, as shown in Figure 1A, MEMS wafer 100 is provided, in the MEMS wafer
100 front is formed from the bottom to top is sequentially formed with oxide skin(coating) 101 and patterned filter layer 102；Then, such as Figure 1B institutes
Show, the MEMS wafer 100 is bonded to intermediate materials on thicker carrier 103 (such as glass substrate), and carry out the back side and grind
Mill is to be thinned the MEMS wafer 100；Then as shown in Figure 1 C, the back side of the MEMS wafer 100 is etched, the oxygen is stopped at
Compound layer 101 is open with being formed in the MEMS wafer；Then as shown in figure iD, using plasma etching etching removal
The oxide skin(coating) 101 that the opening is exposed；Then as referring to figure 1E, MEMS wafer 100 is separated from carrier 103
Come, continues processing until encapsulation.
But due in interim bonding technology, MEMS wafer 100 and carrier 103 are bonded and to detach processing procedure of high cost
It is high；MEMS wafer 100 is bonded to carry out grinding back surface after carrier 103 during, it is bad that edge breakage easily occurs；MEMS wafer
After 100 detach with carrier 103, further includes wet clean step, easily cause dissolvent residual；Using plasma etching etching removal
There is no etching stopping layer when the oxide skin(coating) 101 that the opening is exposed and single-wafer etch process can only be used.Therefore,
It is necessary to propose a kind of production method of MEMS device, to solve the above problems, the production cost of MEMS device is reduced, improves production
Product yield.
In view of the deficiencies of the prior art, the present invention provides a kind of production method of semiconductor devices, including：
Step S301：MEMS wafer is provided, the front of the MEMS wafer is formed with patterned filter layer；
Step S302：Opening is formed in the MEMS wafer, the opening is through the back side of the MEMS wafer；
Step S303：Adhesive tape is formed on the patterned filter layer；
Step S304：MEMS wafer described in thinning back side from the MEMS wafer makes the MEMS wafer be thinned to mesh
Mark thickness；
Step S305：Remove the adhesive tape.
Wherein, the method for forming the opening includes deep reaction ion etching；The method of the thinning back side includes to institute
The central area for stating MEMS wafer is ground, so that the central area of the MEMS wafer is thinned, and in the MEMS wafer
Fringe region form support ring outstanding；The target thickness is less than or equal to 100 microns；The shape in the MEMS wafer
At further including the steps that executing another thinning back side to the MEMS wafer before opening, the MEMS wafer is set to be thinned to another
Target thickness；Another target thickness is 400 microns -500 microns；It further includes the removal support to remove the adhesive tape later
The step of ring；It is also formed with etching stop layer between the MEMS wafer and filter layer；The etching stop layer includes oxidation
Nitride layer；Further include the steps that the removal etching stop layer exposed that is open after removing the adhesive tape；Described in removal
The method of etching stop layer includes etching the etching stopping layer using buffered oxide etch agent；The filter layer includes nitridation
Silicon layer；The patterned filter layer includes filter opening；The adhesive tape includes UV adhesive tapes or heat sensitive adhesive tape.
According to the production method of MEMS device provided by the invention, formed first in MEMS wafer brilliant through the MEMS
Then the opening at the round back side keeps the MEMS wafer front using adhesive tape, subtracts from the back side of the MEMS wafer
The thin MEMS wafer, makes the MEMS wafer be thinned to target thickness, so as to avoid the technique being bonded is needed temporarily, to
Realize that low cost, high yield make ultra-thin MEMS device.
According to the production method of MEMS device provided by the invention, it is brilliant that the MEMS is fixed using UV adhesive tapes or heat sensitive adhesive tape
Circle will not cause to damage in follow-up stripping since viscosity is low to the pattern of wafer frontside；The etching stop layer includes oxidation
Nitride layer etches the etching stopping layer that the opening is exposed using buffered oxide etch agent, can be carried out at batch, in turn
Improve output.
Below with reference to Fig. 2A-Fig. 2 G and Fig. 3, wherein Fig. 2A-Fig. 2 G be method according to an exemplary embodiment of the present invention according to
Exemplary embodiment of the present is shown in the schematic cross sectional view for the device that the step of secondary implementation obtains respectively, Fig. 3
A kind of schematic flow chart of the production method of semiconductor devices.
In the following, being described in detail to the specific implementation mode of the production method of the semiconductor devices of the present invention.
First, step S301 is executed, with reference to Fig. 2A, provides MEMS wafer 200, the front of the MEMS wafer is formed with figure
The filter layer 202 of case.Etching stop layer 201 is also formed between the MEMS wafer 200 and the filter layer 202.Institute
It includes multiple filter openings to state patterned filter layer 202.
Illustratively, MEMS wafer 200 is provided, in the present invention the MEMS wafer 200 can select silicon, polysilicon or
The semi-conducting materials such as person SiGe, it is not limited to a certain.Filter layer 202 can be used silica, silicon nitride, silicon oxynitride,
It is one or more in the common used materials such as phosphosilicate glass, boron phosphosilicate glass, using abilities such as thermal oxidation method, sedimentations
Domain common method is formed, and patterns the filter layer by photoetching process, to form multiple filter openings in the filter layer.Make
For an example, the filter layer 202 includes silicon nitride layer.
Illustratively, etching stop layer 201, institute are also formed between the MEMS wafer 200 and the filter layer 202
It includes oxide skin(coating), such as silica to state etching stop layer 201.The deposition method of the etching stop layer 201 can be selected
One kind in chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD) method or atomic layer deposition (ALD) method.
Then, further include being executed separately to the MEMS wafer with reference to Fig. 2 B, before forming opening in the MEMS wafer
The step of one thinning back side, makes the MEMS wafer be thinned to another target thickness.Illustratively, another target thickness is
400mm-500mm.In the present embodiment, the thickness of the MEMS wafer provided is 700mm-800mm, is carried out to MEMS wafer 200
Thinning back side achievees the purpose that thinned wafer to remove certain thickness backing material.Specifically, another thinning back side
Method can select method commonly used in the art, such as chemical mechanical grinding (CMP), until the MEMS wafer thickness reaches
Until another target thickness 400mm-500mm.MEMS wafer with above-mentioned thicker degree can use existing conventional lithographic
Technique is patterned, compatible with prior art to realize.
Then, step S302 is executed, with reference to Fig. 2 C, forms opening in the MEMS wafer, the opening is through described
The back side of MEMS wafer 200.The method for forming the opening includes deep reaction ion etching.
Illustratively, organic distribution layer (Organic is formed on the back side of the MEMS wafer first
Distribution layer, ODL), siliceous bottom antireflective coating (Si-BARC), in the siliceous bottom anti-reflective
The photoresist layer of deposit patterned on coating (Si-BARC), pattern definition on the photoresist opening of being formed
Then figure is formed using the photoresist layer as mask or with organic distribution layer, bottom antireflective coating, photoresist layer
Lamination be mask etch described in MEMS wafer the back side.
Illustratively, the method for forming the opening can select deep reaction ion etching (DRIE).Specifically, gas is selected
Body hexa-fluoride (SF6) is used as process gas, applies radio-frequency power supply so that hexa-fluoride reacts air inlet and forms high ionization, described
In etching step control operating pressure be 20mTorr-8Torr, frequency power be 600W, 13.5MHz, Dc bias can-
Continuous control in 500V-1000V ensures the needs of anisotropic etching, can keep very high using deep reaction ion etching
Etching photoresist select ratio.The deep reaction ion etching system can select the common equipment of ability, it is not limited to a certain
Model.
Above-mentioned etch step stops at the etching stop layer 201, is open with being formed in the MEMS wafer, described to open
Mouth runs through the MEMS wafer 200.The opening formed is aligned up and down with the filter opening in the filter layer 201, to realize
MEMS device positive and negative is connected.Then organic distribution layer (Organic distribution layer, ODL) is removed, is contained
The bottom antireflective coating (Si-BARC) and photoresist layer of silicon.
Then, step S303 is executed, with reference to Fig. 2 D, forms adhesive tape 203 on the patterned filter layer 202.
Illustratively, adhesive tape 203 is formed on patterned filter layer 202.Adhesive tape 203 is used to fix when backgrind brilliant
The front of circle 200 and protection wafer 200.UV adhesive tapes or heat sensitive adhesive tape commonly used in the art can be used.The adhesive tape 203 can be with
Select adhesive tape commonly used in the art, it is not limited to the product of a certain model of a certain company.The adhesive tape is in follow-up stripping
The pattern of wafer frontside will not be caused to damage since viscosity is low.
Then, step S304 is executed, with reference to Fig. 2 E, MEMS wafer described in the thinning back side from the MEMS wafer 200 makes
The MEMS wafer is thinned to target thickness.
Illustratively, the thinned method includes being ground to the central area of the MEMS wafer, and in wafer
Edge stays the region of 3mm-5mm not grind, so that the central area of the MEMS wafer is thinned, and in the MEMS wafer
Fringe region forms support ring outstanding, and the support ring refers to the part beyond the wafer rear, it can make thin wafer
It can not deform upon and rupture in subsequent transmission, manufacture and in carrying.Above-mentioned support ring can be used as follow-up using oxidation
Object buffered etch agent (BOE) removes holding member when etching stop layer 201, to avoid using facing in interim bonding technology
Shi Zaiti (such as glass substrate), to cost-effective.The target thickness is less than or equal to 100 microns.
Then, step S305 is executed, with reference to Fig. 2 F, removes the adhesive tape 203.
Illustratively, method commonly used in the art may be used in the stripping means of the adhesive tape 203, such as passes through ultraviolet irradiation
Or heating makes the adhesion strength of adhesive tape 203 decline, then stripping tape 203.The adhesive tape has low bonding force, to easily
In removal, the pattern of wafer frontside will not be caused to damage.
Then, further include the removal etch-stop exposed that is open after removing the adhesive tape 203 with reference to Fig. 2 F
Only the step of layer 201.The etching stop layer 201 includes oxide skin(coating).The method for removing the etching stop layer 201 includes making
The etching stop layer is etched with buffered oxide etch agent.It further includes later described in removal to remove the etching stop layer 201
The step of support ring.
Illustratively, the etching stop layer is etched using buffered etch technique (Buffered Oxide Etch, BOE)
201.Wherein, the buffered etch process selection buffered etch liquid, buffered etch liquid BOE is HF and NH4F is mixed according to different proportion
It forms.Such as 6:1BOE etchings indicate 49%HF aqueous solutions：Aqueous solution=1 40%NH4F：The ingredients of 6 (volume ratios) mix and
At.Wherein, HF is main etching solution, NH4F is then used as buffer.Wherein, NH is utilized4F fixes H+Concentration, be allowed to protect
Hold certain rate of etch.It can be in the case where providing etching stopping layer using above-mentioned oxide buffer etchant, realization is opened
The removal of the oxide exposed at mouthful is not in moment deficiency or overetched phenomenon；And it can be in batch to several
Wafer is carried out at the same time etch process, to provide output capacity.Illustratively, the mode that cutting may be used removes the support
Ring.
Next, with reference to Fig. 2 G, the fixation of the MEMS wafer can also be included later by etching the etching stop layer 201
And cutting step.
Illustratively, it after removing above-mentioned support ring, needs to cut the chip, the purpose of chip cutting is
It is many on the wafer for machining preceding processing procedure chip (Die) cutting separation.Completion MEMS wafer 200 will be prepared to consolidate
It is scheduled on blue film 204 to be placed on the annulus 205 of steel, which is known as wafer bonding die (wafer mount), then send again to core
It is cut on piece cutting machine.After having cut, many chips are well-regulated to be arranged on adhesive tape, simultaneously because frame it
Support can avoid blue film fold and chip made to collide with each other, and annulus props up adhesive tape in order to carry.
According to the production method of MEMS device provided by the invention, formed first in MEMS wafer brilliant through the MEMS
Then the opening at the round back side keeps the MEMS wafer front using adhesive tape, subtracts from the back side of the MEMS wafer
The thin MEMS wafer, makes the MEMS wafer be thinned to target thickness, so as to avoid the technique being bonded is needed temporarily, to
Realize that low cost, high yield make ultra-thin MEMS device.
According to the production method of MEMS device provided by the invention, it is brilliant that the MEMS is fixed using UV adhesive tapes or heat sensitive adhesive tape
Circle will not cause to damage in follow-up stripping since viscosity is low to the pattern of wafer frontside；The etching stop layer includes oxidation
Nitride layer etches the etching stopping layer that the opening is exposed using buffered oxide etch agent, can be carried out at batch, in turn
Improve output.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (14)
1. a kind of production method of MEMS device, which is characterized in that include the following steps：
MEMS wafer is provided, the front of the MEMS wafer is formed with patterned filter layer；
Opening is formed in the MEMS wafer, the opening is through the back side of the MEMS wafer；
Adhesive tape is formed on the patterned filter layer；
MEMS wafer described in thinning back side from the MEMS wafer makes the MEMS wafer be thinned to target thickness；
Remove the adhesive tape.
2. the method as described in claim 1, which is characterized in that the method for forming the opening includes deep reaction ion etching.
3. the method as described in claim 1, which is characterized in that the method for the thinning back side includes to the MEMS wafer
Central area is ground, so that the central area of the MEMS wafer is thinned, and in the fringe region shape of the MEMS wafer
At support ring outstanding.
4. the method as described in claim 1, which is characterized in that the target thickness is less than or equal to 100 microns.
5. the method as described in claim 1, which is characterized in that it further includes to institute to be formed in the MEMS wafer before being open
The step of MEMS wafer executes another thinning back side is stated, the MEMS wafer is made to be thinned to another target thickness.
6. method as claimed in claim 5, which is characterized in that another target thickness is 400 microns -500 microns.
7. method as claimed in claim 3, which is characterized in that it further includes the removal support ring to remove the adhesive tape later
Step.
8. the method as described in claim 1, which is characterized in that be also formed with etching between the MEMS wafer and filter layer
Stop-layer.
9. method as claimed in claim 8, which is characterized in that the etching stop layer includes oxide skin(coating).
10. method as claimed in claim 8, which is characterized in that after removing the adhesive tape further include the removal opening
The step of etching stop layer exposed.
11. method as claimed in claim 10, which is characterized in that the method for removing the etching stop layer includes using buffering
Oxide etching agent etches the etching stopping layer.
12. the method as described in claim 1, which is characterized in that the filter layer includes silicon nitride layer.
13. the method as described in claim 1, which is characterized in that the patterned filter layer includes filter opening.
14. the method as described in claim 1, which is characterized in that the adhesive tape includes UV adhesive tapes or heat sensitive adhesive tape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611140082.5A CN108609577B (en) | 2016-12-12 | 2016-12-12 | Manufacturing method of MEMS device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611140082.5A CN108609577B (en) | 2016-12-12 | 2016-12-12 | Manufacturing method of MEMS device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108609577A true CN108609577A (en) | 2018-10-02 |
| CN108609577B CN108609577B (en) | 2020-02-11 |
Family
ID=63644052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611140082.5A Active CN108609577B (en) | 2016-12-12 | 2016-12-12 | Manufacturing method of MEMS device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108609577B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111252731A (en) * | 2020-02-26 | 2020-06-09 | 清华大学 | Micro-electro-mechanical system device preparation protection method |
| WO2021082044A1 (en) * | 2019-10-31 | 2021-05-06 | 潍坊歌尔微电子有限公司 | Mems sensor assembly manufacturing method and sensor assembly manufactured by means of said method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090117832A1 (en) * | 2007-11-07 | 2009-05-07 | Advanced Semiconductor Engineering, Inc. | Wafer polishing method |
| CN104979187A (en) * | 2014-04-02 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Method for dividing wafer |
| CN105448826A (en) * | 2014-05-27 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer cutting method |
| CN106033708A (en) * | 2015-03-11 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Thickness reduction method for wafer |
-
2016
- 2016-12-12 CN CN201611140082.5A patent/CN108609577B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090117832A1 (en) * | 2007-11-07 | 2009-05-07 | Advanced Semiconductor Engineering, Inc. | Wafer polishing method |
| CN104979187A (en) * | 2014-04-02 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | Method for dividing wafer |
| CN105448826A (en) * | 2014-05-27 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer cutting method |
| CN106033708A (en) * | 2015-03-11 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Thickness reduction method for wafer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021082044A1 (en) * | 2019-10-31 | 2021-05-06 | 潍坊歌尔微电子有限公司 | Mems sensor assembly manufacturing method and sensor assembly manufactured by means of said method |
| CN111252731A (en) * | 2020-02-26 | 2020-06-09 | 清华大学 | Micro-electro-mechanical system device preparation protection method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108609577B (en) | 2020-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100449789C (en) | Method of manufacturing a micro-electrical-mechanical system | |
| US20190326252A1 (en) | Dbi to si bonding for simplified handle wafer | |
| CN106098625B (en) | Chip encapsulation structure of plasma dicing and manufacturing method | |
| CN100477162C (en) | Wafer cutting method | |
| JP6049555B2 (en) | Silicon via via scribe line | |
| US9209083B2 (en) | Integrated circuit manufacturing for low-profile and flexible devices | |
| CN104422547B (en) | Resonance type pressure sensor and its manufacturing method | |
| US9082881B1 (en) | Semiconductor on polymer substrate | |
| CN105480936B (en) | Semiconductor device, manufacturing method thereof and electronic device | |
| TW200910435A (en) | Method of wafer-level segmenting capable of protecting contact pad | |
| CN107055462A (en) | Mems structure and its manufacture method | |
| US10403772B2 (en) | Electrical and optical via connections on a same chip | |
| US20040063237A1 (en) | Fabricating complex micro-electromechanical systems using a dummy handling substrate | |
| US6017822A (en) | Method of thinning semiconductor wafer of smaller diameter than thinning equipment was designed for | |
| CN108609577A (en) | A kind of production method of MEMS device | |
| US20110256687A1 (en) | Method for Fabricating Through Substrate Microchannels | |
| US9064950B2 (en) | Fabrication method for a chip package | |
| CN108117042A (en) | A kind of semiconductor devices and preparation method, electronic device | |
| US8129805B2 (en) | Microelectromechanical system (MEMS) device and methods for fabricating the same | |
| CN108341395A (en) | A kind of production method of MEMS device | |
| CN111799169A (en) | Process for processing TGV by combining femtosecond laser with HF wet etching | |
| CN111524849A (en) | Semiconductor structure and manufacturing method thereof | |
| CN108529554A (en) | A kind of MEMS device and preparation method thereof | |
| CN106185788B (en) | A kind of MEMS and preparation method thereof, electronic installation | |
| CN106098535A (en) | Bonding wafer manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |