CN111252731A - Micro-electro-mechanical system device preparation protection method - Google Patents
Micro-electro-mechanical system device preparation protection method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 230000007797 corrosion Effects 0.000 claims abstract description 35
- 238000005260 corrosion Methods 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 26
- 239000012670 alkaline solution Substances 0.000 claims abstract description 15
- 239000003929 acidic solution Substances 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 94
- 239000000243 solution Substances 0.000 claims description 64
- XMGQYMWWDOXHJM-JTQLQIEISA-N (+)-α-limonene Chemical compound CC(=C)[C@@H]1CCC(C)=CC1 XMGQYMWWDOXHJM-JTQLQIEISA-N 0.000 claims description 44
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 36
- 239000002390 adhesive tape Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 27
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 9
- 238000002791 soaking Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000000576 coating method Methods 0.000 abstract description 8
- 230000006378 damage Effects 0.000 abstract description 8
- 238000003912 environmental pollution Methods 0.000 abstract description 7
- 208000027418 Wounds and injury Diseases 0.000 abstract description 6
- 208000014674 injury Diseases 0.000 abstract description 6
- 231100000331 toxic Toxicity 0.000 abstract description 5
- 230000002588 toxic effect Effects 0.000 abstract description 5
- 238000001039 wet etching Methods 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
- B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
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Abstract
The application provides a preparation protection method of a micro electro mechanical system device, which does not involve dissolving black wax by a toxic and volatile solvent during preparation of a black wax layer, and greatly reduces the problems of environmental pollution and human body injury in the black wax coating process. In addition, the formed black wax layer can effectively protect the MEMS structure from being corroded in alkaline solution and acidic solution for a long time through temperature regulation and control and temperature time control in the preparation protection method of the MEMS device, and the protection link of the MEMS device corrosion process is solved. Meanwhile, the MEMS device preparation protection method improves the efficiency of the MEMS wet etching process, saves the process time, protects the functional structure of the MEMS device, ensures the integrity of the functional structure in the etching process and solves the key technical problem in the MEMS device manufacturing process.
Description
Technical Field
The application relates to the technical field of micro electro mechanical system device processing, in particular to a preparation and protection method of a micro electro mechanical system device.
Background
Micro Electro Mechanical Systems (MEMS) devices, wherein alkaline and acidic etching solutions are used for processing the MEMS device structure and removing the mask during the processing and preparation process. However, alkaline and acidic etching solutions are extremely corrosive and can damage MEMS device structures and metals.
Conventional protection methods include a mechanical jig protection method and a corrosion-resistant material protection method. However, the mechanical clamp protection method has high difficulty in sealing environment operation, so that a corrosive solution is easy to contact with the MEMS device structure, and the practicability and the applicability are low. In the traditional corrosion-resistant material protection method, the ProTeck adhesive has high cost, long transportation period and relatively short quality guarantee period. In addition, toxic and volatile solutions are used in the conventional methods for protecting corrosion-resistant materials, which causes environmental pollution and harm to human bodies.
Disclosure of Invention
In view of the above, it is necessary to provide a protection method for manufacturing a mems device, which addresses the above-mentioned problems of the conventional protection method.
The application provides a preparation and protection method of a micro electro mechanical system device, which comprises the following steps:
s10, providing a substrate, wherein the substrate is provided with a first surface and a second surface opposite to the first surface, the first surface is provided with a plurality of micro-electro-mechanical system device structures, and a mask layer is prepared on the second surface;
s20, etching part of the mask layer to the substrate to expose part of the second surface;
s30, providing a high-temperature adhesive tape, and arranging the high-temperature adhesive tape on the surface of the mask layer, which is far away from the substrate, so as to protect the exposed part of the second surface;
s40, providing a heating device, and placing the surface of the high-temperature adhesive tape, which is far away from the mask layer, on the heating device;
s50, heating the substrate to 110-130 ℃ by adopting the heating device, keeping the temperature within the range of 110-130 ℃, and preparing black wax layers on the first surface, the side surface of the substrate and the side surface of the mask layer;
s60, heating the substrate to 150-160 ℃ by adopting the heating device, and keeping the temperature for 10-30 min;
s70, reducing the temperature of the substrate to 95-105 ℃, and keeping for 25-35 min;
s80, reducing the temperature of the substrate to 20-26 ℃, and removing the high-temperature adhesive tape by using isopropanol;
and S90, etching the substrate by using an alkaline solution.
In one embodiment, the method for preparing and protecting the MEMS device further comprises the following steps:
s100, removing the residual mask layer by adopting an acidic solution;
and S110, removing the black wax layer by adopting a D-limonene solution to prepare the micro-electro-mechanical system device.
In one embodiment, the thickness of the black wax layer is 120 μm to 200 μm.
In one embodiment, reducing the temperature of the substrate to 20 ℃ to 26 ℃ in the S80 includes:
and cooling the substrate at intervals of 1 ℃ every time, and keeping the temperature for 3-5 min every time.
In one embodiment, the removing the high temperature tape with isopropyl alcohol in the S80 includes:
dripping the isopropanol to the contact part of the high-temperature adhesive tape and the mask layer at the temperature of 20-26 ℃, and removing the high-temperature adhesive tape;
and removing the foreign matters adhered to the surface of the mask layer, which is far away from the substrate, and the second surface by using the isopropanol.
In one embodiment, in S90, the substrate prepared with the black wax layer is put into a KOH solution or a TMAH solution for etching.
In one embodiment, in S90, when the substrate prepared with the black wax layer is placed in a KOH solution or a TMAH solution for etching, the working temperature is not greater than 75 ℃.
In one embodiment, the removing the remaining mask layer in S100 with an acidic solution includes:
and putting the substrate with the black wax layer into an HF solution for corrosion, and removing the residual mask layer.
In one embodiment, in the S100, the concentration of the HF solution is 20% to 25%, the operating temperature is set to 20 ℃ to 26 ℃, and the etching time is set to 15min to 30 min.
In one embodiment, in S110, removing the black wax layer by using a D-limonene solution to prepare a mems device, including:
after the acid solution is adopted to remove the residual mask layer, the substrate with the black wax layer is washed by clear water for not less than 5 times to remove the residual acid solution;
and placing the substrate with the prepared black wax layer in the D-limonene solution, and removing the black wax layer to prepare the micro-electro-mechanical system device.
In one embodiment, in the S110, when the black wax layer is removed in an environment with a working temperature of 20 ℃ to 26 ℃, no less than 50ml of the D-limonene solution is used each time, and the number of times of soaking with the D-limonene solution is no less than 5 times.
The application provides a preparation and protection method of the micro-electro-mechanical system device. Through the steps of S50-S80, the temperature and the temperature maintaining time of the substrate are regulated and controlled, the utilization rate of the black wax is effectively improved, the coating thickness of the black wax is increased, the black wax is better covered, the problem of falling of the black wax in the corrosion process is solved, further the corrosion of alkaline solution or/and acidic solution is better carried out, the wet removal of a corrosion mask is realized, the steps of a wet corrosion process are greatly shortened, and a reliable and effective process method is provided for the wet corrosion of the MEMS device.
The structure shown in fig. 5 is formed by S10 to S80. The substrates are protected from the etching (i.e., the exposed portions of the second surface) by the steps S10 to S80. In S90, etching the substrate through the exposed portion of the second surface using an alkaline solution.
Therefore, by the preparation and protection method of the micro-electro-mechanical system device, toxic and volatile solvents are not involved in the preparation of the black wax layer to dissolve the black wax, so that the problems of environmental pollution and human body injury in the black wax coating process are greatly reduced. And forming the black wax layer on the first surface, the side surface of the substrate and the side surface of the mask layer by regulating and controlling the temperature and the temperature time in the preparation and protection method of the micro electro mechanical system device. The black wax layer can effectively protect the MEMS structure from being corroded in alkaline solution and acidic solution for a long time, and the protection link of the MEMS device corrosion process is solved.
Meanwhile, the protection method for preparing the MEMS device can protect the substrate except the etched surface (namely the exposed part of the second surface) of the substrate. At the same time, the preparation and protection method of the micro electro mechanical system device can realize the corrosion in the alkaline solution or the acid solution, thereby improving the efficiency of the MEMS wet etching process and saving the process time. Meanwhile, the MEMS device preparation protection method also protects the functional structure of the MEMS device, ensures the integrity of the functional structure in the corrosion process and solves the key technical problem in the MEMS device manufacturing process.
Drawings
FIG. 1 is a schematic flow chart illustrating steps of a method for fabricating a protection for a MEMS device provided herein;
FIG. 2 is a cross-sectional view of a process structure in one embodiment provided herein;
FIG. 3 is a cross-sectional view of a process structure in one embodiment provided herein;
FIG. 4 is a cross-sectional view of a process structure in one embodiment provided herein;
FIG. 5 is a cross-sectional view of a process structure in one embodiment provided herein;
FIG. 6 is a cross-sectional view of a structure of an embodiment of a fabrication process provided herein;
FIG. 7 is a schematic diagram of a MEMS device structure provided herein.
Description of the reference numerals
The MEMS device comprises a substrate 10, a first surface 110, a second surface 120, a MEMS device structure 111, a mask layer 121, a silicon oxide layer 1211, a silicon nitride layer 1212, a high-temperature adhesive tape 20, a heating device 30, a black wax layer 40 and the MEMS device 100.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below by way of embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be considered as limiting the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Referring to fig. 1, the present application provides a method for protecting a mems device, comprising:
s10, providing a substrate 10 having a first surface 110 and a second surface 120 opposite to the first surface 110, wherein the first surface 110 is provided with a plurality of mems device structures 111, and a mask layer 121 is formed on the second surface 120;
s20, etching a portion of the mask layer 121 and reaching the substrate 10 to expose a portion of the second surface 120;
s30, providing a high temperature adhesive tape 20, disposing the high temperature adhesive tape 20 on the surface of the mask layer 121 far from the substrate 10, so as to protect the exposed portion of the second surface 120;
s40, providing a heating device 30, and placing the high temperature adhesive tape 20 on the heating device 30 away from the surface of the mask layer 121;
s50, heating the substrate 10 to 110-130 ℃ by using the heating device 30, and maintaining the temperature at 110-130 ℃, thereby preparing the black wax layer 40 on the first surface 110, the side surface of the substrate 10, and the side surface of the mask layer 121;
s60, heating the substrate 10 to 150-160 ℃ by the heating device 30, and keeping the temperature for 10-30 min;
s70, reducing the temperature of the substrate 10 to 95-105 ℃, and keeping for 25-35 min;
s80, reducing the temperature of the substrate 10 to 20-26 ℃, and removing the high-temperature adhesive tape 20 by using isopropanol;
s90, etching the substrate 10 with an alkaline solution.
Referring to fig. 2, in S10, the substrate 10 may be a silicon wafer. The MEMS device structure 111 is a MEMS device structure. A plurality of the MEMS device structures 111 are arranged in a matrix on the first surface 110.
Referring to fig. 3, in S20, the mask layer 121 is prepared on the second surface 120. The mask layer 121 includes a silicon oxide layer 1211 and a silicon nitride layer 1212, and the silicon oxide layer 1211 and the silicon nitride layer 1212 are sequentially stacked on the second surface 120. In the process of etching the substrate 10, the mask layer 121 may protect a portion that does not need to be etched, and then may be patterned according to an actual mask pattern, and specifically may be prepared according to the mask pattern. In this step, a portion of the mask layer 121 is etched until the second surface 120 of the substrate 10 is exposed, so as to expose a portion of the second surface 120. The substrate 10 is then etched through the exposed portion of the second surface 120 to form the desired MEMS device 100.
Referring to fig. 4, in S30, the exposed second surface 120 is protected by the high temperature adhesive tape 20, so as to protect the etched surface (i.e., the second surface 120) of the substrate 10. In S40, the substrate 10 provided with the high-temperature adhesive tape 20 is fixed on the heating device 30, so as to heat or cool the substrate 10, thereby controlling the temperature. Specifically, the surface of the high temperature adhesive tape 20 away from the mask layer 121 is placed on the heating device 30, and the etched surface (i.e., the second surface 120) of the substrate 10 is protected. The heating device 30 may be a hot plate having a heat conductive property. The substrate 10 is heated by the heating device 30.
In S50, the substrate 10 is heated to 110 to 130 ℃ by the heating device 30, and the temperature is maintained within the range of 110 to 130 ℃. And sequentially coating black wax on the first surface 110 from the excircle to the center of the substrate 10 in a clockwise or counterclockwise direction to form the black wax layer 40. Wherein, the black wax layer 40 covers the MEMS device structures 111, thereby playing a role of protection. Meanwhile, black wax is sequentially smeared on the side surface of the substrate 10 and the side surface of the mask layer 121 to form the black wax layer 40.
In S60, heating the substrate 10 to 150 ℃ to 160 ℃ with the heating device 30 so that the viscosity of the black wax is reduced. Meanwhile, the black wax layer is kept for 10min to 30min, so that the black wax is naturally leveled and is better and uniformly arranged on the first surface 110, the side surface of the substrate 10 and the side surface of the mask layer 121, and the black wax layer 40 is further formed. The MEMS device structure 111 and the substrate 10 are protected by the black wax layer 40. Meanwhile, the protection by the black wax layer 40 except the etched surface (i.e., the exposed portion of the second surface 120) of the substrate 10 can be ensured by the S50 and the S60.
In the step S70, the temperature of the substrate 10 is reduced to 95-105 ℃ and kept for 25-35 min. At this time, the surface of the black wax may be solidified by reducing the temperature and maintaining the temperature for a long time, so as to better form the stable black wax layer 40 and achieve protection. Preferably, the temperature of the substrate 10 is reduced to 95-105 ℃ and kept for 30min, so that the characteristics of the black wax can be better utilized, the surface of the black wax is solidified, and the more stable black wax layer 40 is formed to realize protection.
In S80, the temperature of the substrate 10 is lowered to 20 to 26 ℃, so that the black wax layer 40 is more firmly adhered to the substrate 10. In the S80, the heating device 30 is removed while the high temperature adhesive tape 20 is removed with isopropyl alcohol.
Through the steps of S50-S80, the temperature and the temperature maintaining time of the substrate 10 are regulated and controlled, the utilization rate of the black wax is effectively improved, the coating thickness of the black wax is increased, the black wax is better covered, the problem of falling of the black wax in the corrosion process is solved, further the corrosion of alkaline solution or/and acidic solution is better carried out, the wet removal of a corrosion mask is realized, the steps of a wet corrosion process are greatly shortened, and a reliable and effective process method is provided for the wet corrosion of the MEMS device.
Referring to fig. 5, the structure shown in fig. 5 is formed through S10 to S80. The substrate 10 is protected except for the etched surface (i.e., the exposed portion of the second surface 120) by the processes of S10 to S80. In S90, the substrate 10 is etched through the exposed portion of the second surface 120 using an alkaline solution.
Therefore, by the preparation and protection method of the micro-electro-mechanical system device, toxic and volatile solvents are not involved in the preparation of the black wax layer 40 to dissolve the black wax, so that the problems of environmental pollution and human body injury in the black wax coating process are greatly reduced. And, by the temperature regulation and control and the temperature time control in the preparation protection method of the micro electro mechanical system device, the black wax layer 40 is formed on the first surface 110, the side surface of the substrate 10 and the side surface of the mask layer 121. The black wax layer 40 can effectively protect the MEMS structure from being corroded in alkaline solution and acidic solution for a long time, and the protection link of the MEMS device corrosion process is solved.
Meanwhile, the protection method for the MEMS device preparation can protect the substrate 10 except the etched surface (i.e. the exposed part of the second surface 120). At the same time, the preparation and protection method of the micro electro mechanical system device can realize the corrosion in the alkaline solution or the acid solution, thereby improving the efficiency of the MEMS wet etching process and saving the process time. Meanwhile, the MEMS device preparation protection method also protects the functional structure of the MEMS device, ensures the integrity of the functional structure in the corrosion process and solves the key technical problem in the MEMS device manufacturing process.
In one embodiment, the method for preparing and protecting the MEMS device further comprises the following steps:
s100, removing the residual mask layer 121 by using an acidic solution;
s110, removing the black wax layer 40 by using a D-limonene solution, and preparing the micro-electro-mechanical system device 100.
In the S100, the acidic solution may be phosphoric acid 85%, hydrofluoric acid 40%, hydrofluoric acid 1:10, 1:5 (commonly used for silicon nitride), hydrofluoric acid 1:10, or 1:5 (commonly used for silicon oxide) at 155 to 165 ℃.
In the S110, the D-limonene solution is non-toxic, does not cause problems of environmental pollution, human body injury and the like, and can completely remove the black wax.
By the method for preparing and protecting the micro-electro-mechanical system device, corrosion in an acidic solution and an alkaline solution can be realized simultaneously, the efficiency of the MEMS wet etching process is improved, and the process time is saved. Therefore, the preparation protection method of the micro-electro-mechanical system device can obtain a finished device after a corrosion process and a black wax removal process, and can be widely applied to the corrosion processing process of integrated circuits and MEMS.
In one embodiment, the thickness of the black wax layer 40 is 120 μm to 200 μm.
Through the steps of S50-S80, the temperature and the temperature maintaining time of the substrate 10 are regulated and controlled, the utilization rate of the black wax is effectively improved, and the coating thickness of the black wax is increased. In this embodiment, the thickness of the black wax layer 40 is 120 μm to 200 μm, and the substrate 10 can effectively cover the black wax by temperature control and temperature maintenance, so as to completely cover the MEMS device structure 111. Meanwhile, the side surface of the substrate 10 can be covered, so that the overall protection is realized. The thickness of the black wax layer 40 is set to be 120-200 mu m, so that the black wax layer 40 can be better covered, the corrosion of alkaline solution or/and acidic solution can be better carried out, the wet removal of a corrosion mask is realized, the steps of a wet corrosion process are greatly shortened, and a reliable and effective process method is provided for the wet corrosion of the MEMS device. In one embodiment, reducing the temperature of the substrate 10 to 20 ℃ to 26 ℃ in the S80 includes:
and cooling the substrate 10 at intervals of 1 ℃ every time, and keeping the temperature for 3-5 min every time.
In one embodiment, the removing the high temperature adhesive tape 20 with isopropyl alcohol in the S80 includes:
dripping the isopropanol to the contact part of the high-temperature adhesive tape 20 and the mask layer 121 at the temperature of 20-26 ℃, and removing the high-temperature adhesive tape 20;
and removing the adhering foreign matters on the surface of the mask layer 121 far away from the substrate 10 and the second surface 120 by using the isopropanol.
In this embodiment, at a temperature ranging from 20 ℃ to 26 ℃, a dropper is used to drop the isopropyl alcohol to a contact portion (i.e., a high temperature adhesive tape bonding portion) between the high temperature adhesive tape 20 and the mask layer 121 for a plurality of times, so that the high temperature adhesive tape 20 is separated from the mask layer 121, and the substrate 10 is removed by the high temperature adhesive tape 20. Meanwhile, the etching surface (i.e., the exposed portion of the second surface 120) of the substrate 10 is directed upward, and the isopropyl alcohol is dropped onto the etching surface (i.e., the exposed portion of the second surface 120) of the substrate 10 by using a dropping pipe for a plurality of times, so that foreign matters adhered to the surface can be eliminated.
In one embodiment, in S90, the substrate 10 with the black wax layer 40 is placed in a KOH solution or a TMAH solution for etching.
In this embodiment, the substrate 10 covered by the black wax layer 40 is placed in a KOH solution or a TMAH solution for structural corrosion. The black wax layer 40 prepared by the preparation and protection method of the micro-electro-mechanical system device is not easy to fall off and can be stably protected, so that KOH solution or TMAH solution corrosion can be better performed, the steps of a wet corrosion process are greatly shortened, and a reliable and effective process method is provided for MEMS device wet corrosion.
In one embodiment, in S90, when the substrate 10 with the black wax layer 40 is placed in a KOH solution or a TMAH solution for etching, the working temperature is not greater than 75 ℃.
In this embodiment, the working temperature of the KOH solution and the TMAH solution is not greater than 75 ℃, that is, the working temperature is not greater than 75 ℃, so that the black wax layer 40 can be prevented from softening and falling off, and better protection can be achieved.
In one embodiment, the removing the remaining mask layer 121 in S100 with an acidic solution includes:
and putting the substrate 10 with the black wax layer 40 into an HF solution for corrosion, and removing the residual mask layer 121.
In this embodiment, the substrate 10 covered by the black wax layer 40 is put into a diluted HF solution for etching. The black wax layer 40 prepared by the protection method for the micro-electro-mechanical system device is not easy to fall off, and can be stably protected, so that the HF solution corrosion can be better performed to remove the residual mask layer 121.
In one embodiment, in the S100, the concentration of the HF solution is 20% to 25%, the operating temperature is set to 20 ℃ to 26 ℃, and the etching time is set to 15min to 30 min.
In this embodiment, the working temperature is set to 20 ℃ to 26 ℃ and not more than 75 ℃, so that the black wax layer 40 can be prevented from softening and falling off, and better protection can be realized. By setting the concentration of the HF solution to be 20-25% and the etching time to be 15-30 min, the residual mask layer 121 can be removed more quickly, the process time is saved, and the efficiency of the MEMS wet etching process is improved.
In one embodiment, in S110, removing the black wax layer 40 with a D-limonene solution to obtain the mems device 100, including:
after the acid solution is adopted to remove the residual mask layer 121, washing the substrate 10 with the black wax layer 40 for not less than 5 times with clear water to remove the residual acid solution;
and placing the substrate 10 with the prepared black wax layer 40 in the D-limonene solution, and removing the black wax layer 40 to prepare the micro-electromechanical system device 100.
In this embodiment, after the etching by the acidic solution and the alkaline solution, the substrate 10 with the black wax layer 40 is placed in a water tank to be washed for not less than 5 times, so as to completely remove the etching solution. Meanwhile, the substrate 10 with the black wax layer 40 is placed in the D-limonene solution to be soaked, so as to remove the black wax layer 40, thereby obtaining the mems device 100. The D-limonene solution is non-toxic, does not cause problems of environmental pollution, human body injury and the like, and can completely remove black wax. At this time, by the preparation and protection method of the micro-electro-mechanical system device, the black wax layer 40 is prepared without dissolving the black wax by using a toxic and volatile solvent, so that the problems of environmental pollution and human body injury in the black wax coating process are greatly reduced.
In one embodiment, in the S110, when the black wax layer 40 is removed in an environment with a working temperature of 20 ℃ to 26 ℃, no less than 50ml of the D-limonene solution is used each time, and the number of times of soaking with the D-limonene solution is no less than 5 times.
In this embodiment, the D-limonene solution is used in different volumes according to different usage amounts of the black wax layer 40. Preferably, not less than 250ml of the D-limonene solution is used each time 6g of black wax is removed. The use volume of the D-limonene solution can be selected according to different use amounts of the black wax layer 40, so that the cost and the resources can be better saved according to the matching proportion in the embodiment. Meanwhile, the D-limonene solution is used for not less than 50ml each time, the soaking time is not less than 5 times, the black wax layer 40 can be removed better, and the high-quality micro-electro-mechanical system device 100 can be obtained.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A preparation protection method for a micro electro mechanical system device is characterized by comprising the following steps:
s10, providing a substrate (10) having a first surface (110) and a second surface (120) opposite to the first surface (110), wherein the first surface (110) is provided with a plurality of MEMS device structures (111), and preparing a mask layer (121) on the second surface (120);
s20, etching part of the mask layer (121) and exposing part of the second surface (120) from the substrate (10);
s30, providing a high-temperature adhesive tape (20), and arranging the high-temperature adhesive tape (20) on the surface of the mask layer (121) far away from the substrate (10) to protect the exposed part of the second surface (120);
s40, providing a heating device (30), and placing the high-temperature adhesive tape (20) on the heating device (30) far away from the surface of the mask layer (121);
s50, heating the substrate (10) to 110-130 ℃ by using the heating device (30), keeping the temperature within the range of 110-130 ℃, and preparing a black wax layer (40) on the first surface (110), the side surface of the substrate (10) and the side surface of the mask layer (121);
s60, heating the substrate (10) to 150-160 ℃ by adopting the heating device (30), and keeping the temperature for 10-30 min;
s70, reducing the temperature of the substrate (10) to 95-105 ℃, and keeping for 25-35 min;
s80, reducing the temperature of the substrate (10) to 20-26 ℃, and removing the high-temperature adhesive tape (20) by using isopropanol;
s90, etching the substrate (10) by using an alkaline solution.
2. The mems device fabrication protection method of claim 1, further comprising:
s100, removing the residual mask layer (121) by adopting an acid solution;
and S110, removing the black wax layer (40) by adopting a D-limonene solution, and preparing the micro-electro-mechanical system device (100).
3. The mems device manufacturing protection method according to claim 1, wherein the thickness of the black wax layer (40) is 120 μm to 200 μm.
4. The mems device manufacturing protection method as claimed in claim 1, wherein the step of lowering the temperature of the substrate (10) to 20-26 ℃ in S80 includes:
and cooling the temperature of the substrate (10) at intervals of 1 ℃ every time, and keeping the temperature for 3-5 min every time.
5. The mems device preparation protection method as claimed in claim 1, wherein the removing the high temperature tape (20) with isopropyl alcohol in S80 comprises:
dripping the isopropanol to the contact part of the high-temperature adhesive tape (20) and the mask layer (121) at the temperature of 20-26 ℃, and removing the high-temperature adhesive tape (20);
and removing the adhering foreign matters of the surface of the mask layer (121) far away from the substrate (10) and the second surface (120) by using the isopropanol.
6. The mems device manufacturing protection method according to claim 1, wherein in S90, the substrate (10) with the black wax layer (40) is etched by KOH solution or TMAH solution.
7. The preparation method for the MEMS device according to claim 6, wherein in the step S90, when the substrate (10) prepared with the black wax layer (40) is put into KOH solution or TMAH solution for etching, the working temperature is not higher than 75 ℃.
8. The mems device manufacturing protection method as claimed in claim 1, wherein the removing of the remaining mask layer (121) in S100 with an acidic solution comprises:
and putting the substrate (10) with the prepared black wax layer (40) into an HF solution for corrosion, and removing the residual mask layer (121).
9. The method for protecting the preparation of a MEMS device according to claim 8, wherein in S100, the concentration of the HF solution is 20-25%, the working temperature is set to 20-26 ℃, and the etching time is set to 15-30 min.
10. The preparation method for the mems device according to claim 1, wherein in the step S110, the black wax layer (40) is removed by using a D-limonene solution to prepare the mems device (100), comprising:
after the acid solution is adopted to remove the residual mask layer (121), the substrate (10) with the black wax layer (40) is washed with clear water for not less than 5 times to remove the residual acid solution;
and (3) placing the substrate (10) with the prepared black wax layer (40) in the D-limonene solution, and removing the black wax layer (40) to prepare the micro-electro-mechanical system device (100).
11. The preparation method for protecting the MEMS device according to claim 10, wherein in the step S110, when the black wax layer (40) is removed in an environment with a working temperature of 20-26 ℃, not less than 50ml of the D-limonene solution is adopted each time, and the D-limonene solution is adopted for soaking for not less than 5 times.
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| US5891354A (en) * | 1996-07-26 | 1999-04-06 | Fujitsu Limited | Methods of etching through wafers and substrates with a composite etch stop layer |
| US20070161139A1 (en) * | 2006-01-10 | 2007-07-12 | Knowles Electronics, Llc | Method for Singulating A Released Microelectromechanical System Wafer |
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Application publication date: 20200609 |